[go: up one dir, main page]

WO2018172211A1 - Dispositif et procédé pour abaisser la pression partielle de h2o dans un dispositif de revêtement par dépôt en phase vapeur organique - Google Patents

Dispositif et procédé pour abaisser la pression partielle de h2o dans un dispositif de revêtement par dépôt en phase vapeur organique Download PDF

Info

Publication number
WO2018172211A1
WO2018172211A1 PCT/EP2018/056679 EP2018056679W WO2018172211A1 WO 2018172211 A1 WO2018172211 A1 WO 2018172211A1 EP 2018056679 W EP2018056679 W EP 2018056679W WO 2018172211 A1 WO2018172211 A1 WO 2018172211A1
Authority
WO
WIPO (PCT)
Prior art keywords
inert gas
cooling
cooling zone
chamber
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/056679
Other languages
German (de)
English (en)
Inventor
Alexander GEORGI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to KR1020197029452A priority Critical patent/KR20190132649A/ko
Priority to CN201880020824.1A priority patent/CN110462094A/zh
Publication of WO2018172211A1 publication Critical patent/WO2018172211A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Definitions

  • the invention relates to a device for depositing layers of an organic material on a substrate, having a gas inlet element having a heating device arranged in a reactor housing, a steam generator with which an organic starting material can be brought into the vapor form and having a Supply line is connected to the gas inlet member, through which the generated vapor and an inert gas fed into the steam generator is fed into the gas inlet member, and with a cooling device having a housing arranged in the reactor substrate holder for supporting the substrate.
  • the invention further relates to a method for reducing the partial pressure of water in a process chamber of such a device, wherein the total pressure within the process chamber is in a range between 0.1 and 10 mbar.
  • US 2011/0117289 AI and US 2014/0302624 AI describe a device for depositing OLEDs without the presence of a carrier gas under high vacuum conditions.
  • a suction opening for an ultra-high vacuum pump In the vicinity of a suction opening for an ultra-high vacuum pump are cooling panels for freezing organic substances.
  • Cold traps are also known in other high vacuum processes, which are described, for example, in EP 2 264 224 Bl or US 8,858,713 B2.
  • a cold trap for condensing out volatiles from an exhaust gas stream is described in DE 20 2015 101 792 Ul.
  • DE 10 2014 109 195 A1 describes a method and an apparatus for producing a vapor, wherein liquid or solid particles transported in a carrier gas are brought into the gaseous form by supplying heat. The vapor thus produced is fed to a device for depositing layers of an organic material, as described, for example, in DE 10 2015 118 765 A1.
  • the organic starting materials used in the production of OLEDs are brought into a vapor form and passed as a vapor together with a carrier gas through a heated gas inlet member in a process chamber, where they are deposited on a substrate as a layer, which substrate of a cooled substrate holder is worn. On the substrate holder is a shadow mask for structuring the layer.
  • the presence of minute amounts of water vapor in the inert gas atmosphere has a significant influence on the functioning of the OLEDs.
  • measures must be taken to ensure that the housing chamber is connected to the walls of the process chamber and in particular to walls of a flow chamber connected to the process chamber. mer to remove adsorbed water.
  • the reactor housing is pumped out over several days. It is also known in the art to remove water molecules from the inner walls of the reactor housing by heating the walls of a reactor housing.
  • a cooling zone which has means with which the cooling zone can be cooled to a temperature below 200 K.
  • the device has a gas inlet member which is heatable to a temperature which is above the condensation temperature of the steam which is introduced into the process chamber with the inlet member.
  • a steam generator in which a solid or liquid organic starting material is brought into the vapor form. The evaporated organic starting material is combined with one in the
  • the gas inlet member has a gas outlet surface with a plurality of particularly regularly arranged gas outlet openings, from which the inert gas and the organic vapor transported by the organic vapor can enter into a process chamber.
  • the Surface extension of the gas outlet surface corresponds approximately to the surface extension of the substrate, which extends substantially parallel to the gas outlet surface.
  • the substrate lies on a cooled substrate holder so that the vapor can condense on the substrate surface.
  • On the substrate surface is a shadow mask, so that the layer is structured.
  • the layer structure is in the micrometer range, so that the mask can be precisely adjusted to the micrometer.
  • the cooling zone is kept at a temperature which is below 200 K, but above the condensation temperature of the carrier gas, ie at nitrogen 77 K.
  • the temperature of the cooling zone is preferably below 170 K or more preferably below 150 K and preferably above 100 K.
  • the process chamber is located in a reactor housing and is connected in fluid communication with a housing chamber into which an inlet opening can also open for feeding an inert gas.
  • the housing chamber may be an environmental chamber surrounding the process chamber, the process chamber being separated from the environmental chamber by process chamber walls that may be heated. The process chamber and the environmental chamber thus form a chamber-in-chamber arrangement.
  • the housing chamber can also be a storage chamber for a shielding plate, which can be moved from a storage position into a screen position during a mask change and / or a substrate change, in which it is arranged in front of the gas outlet surface of the gas inlet member, around the mask or to shield the substrate from radiant heat from the gas inlet member.
  • the storage chamber in which the screen plate is in the storage position may have a cooling zone.
  • the device can moreover have transfer chambers and, for example, a mask can be stored in a transfer chamber, which can be stored against another mask should be replaced.
  • a transfer chamber can store a substrate, which is brought to the substrate holder during a substrate change.
  • this transfer chamber is provided with cooling zones.
  • the transfer chamber can be connected via a gas-tight gate with a lock to eject substrates or masks from the reactor housing or to inject it into the reactor housing.
  • the lock can also have a cooling zone.
  • the reactor housing is connected to an external, purged with an inert gas chamber for handling the masks or the substrates.
  • This external chamber may also have a cooling zone.
  • the cooling zones according to the invention have the task of freezing the water vapor out of the inert gas flowing past the cooling zones or of freezing the water vapor in the cooling zone which diffuses to the cooling zone through the inert gas atmosphere.
  • the cooling zone is formed by a cooled surface of a cooling panel. Means are provided to cool the cooling panel.
  • the cooling panel is connected to a cooling unit, which dissipates heat from the cooling panel.
  • a cooling liquid can be fed with a feed line into cooling channels of the cooling panel. From a derivative, the cooling liquid can flow back into a cooling unit.
  • the cooling power is brought from a cryogenic pump.
  • the cooling zone can here be formed by a suction opening of a cryopump.
  • the Cryo pump is a Cryo pump otherwise used in a high vacuum device.
  • an inert gas atmosphere is generated in which the total pressure in the range is preferably between 0.1 and 10 mbar.
  • OLEDs are deposited in a process chamber of an OVPD coating device.
  • the process chamber is located in a reactor housing, in the housing cavity of the inert gas atmosphere maintained by feeding an inert gas becomes.
  • the vaporous organic starting material is fed into the process chamber through the gas inlet element.
  • a cooling zone whose temperature is at most 200 K and at least the condensation temperature of the inert gas, water vapor evaporating from the walls of the reactor housing cavity is frozen out.
  • a housing chamber which is flow-connected to the process chamber, is cooled in the region of a cooling zone such that the cooling zone forms a water vapor sink.
  • the method according to the invention the time which is required after a maintenance interval in which the reactor housing has been opened in order to deposit functioning OLED layers is significantly reduced in the device according to the invention.
  • the method according to the invention is preferably used after a maintenance interval in which the reactor housing having the process chamber has been opened so that the reactor housing walls have come into contact with water vapor-carrying gas, for example air.
  • the method according to the invention is also used during a coating process in order to freeze the water vapor permanently evaporating from the housing walls from the inert gas atmosphere.
  • the process according to the invention essentially works against the desorption rate of water absorbed on the walls of the chamber, the free path of the water molecules in the reactor housing volume being in the millimeter range or sub-millimeter range due to the process chamber pressure above 0.1 mbar, so that the dominant transport mechanism the water vapor molecules from the process chamber to the cooling zone is the diffusion.
  • the cooling zones according to the invention therefore do not have to be in "visual contact" with the water vapor desorbing surfaces. diffuse into it to exude on the cooled surfaces of the panels. to be frozen.
  • the mean free path in a nitrogen environment is about 0.6 mm at a pressure of 1 mbar and about 6 mm at a pressure of 0.1 mbar.
  • the distance between two cooling panels should be at least ten times the mean free path. At a pressure of 1 mbar, the distance should therefore be at least 6 mm.
  • ice formation on the cooled surface of the cooling panel must also be taken into account. These will taper in the direction of diffusion, ie from the outside in the direction of the disk center, since the freezing of the water vapor, the partial pressure decreases to the center. It may therefore be advantageous if the plates are arranged at an angle to each other. Further, it may be advantageous if each plate has a V-shape and two plates face each other such that the V-vertices face each other.
  • the invention relates both to plane-parallel arrangements of cooling panels and non-plane-parallel arrangements of cooling panels.
  • the cooling panels can also be arranged in the form of a star, the panels extending in the radial direction to an axis.
  • the axis can be directed away from the wall of the reactor housing.
  • the cooling zone is formed by a heat sink having openings. These may be holes, in particular through holes.
  • the bores can be arranged regularly and have a circular cross-section. But it is also a grid arrangement conceivable.
  • FIG. 2 shows the device in a substrate or mask change position
  • FIG. 3 shows a representation according to FIG. 1 of a second exemplary embodiment
  • FIG. 4 schematically shows a representation of a reactor housing which is connected to a lock with an external housing
  • FIG. 5 shows an exemplary embodiment of an arrangement of two cooling panels, which are arranged parallel to one another
  • FIG. 6 shows an arrangement according to FIG. 5, however, with an ice layer arranged on a surface of the cooling panel
  • FIG. 7 shows a further exemplary embodiment of a cooling panel arrangement consisting of two cooling panels
  • FIG. 8 shows a further exemplary embodiment in which the cooling panel arrangement has star-shaped panels
  • Fig. 9 shows another embodiment in which cooling panels are arranged like a grid and
  • Fig. 10 shows another embodiment, in which the cooling panel
  • the inventive device has a reactor housing 1, which has walls which close the housing cavity of the reactor housing 1 gas-tight to the outside.
  • a steam generator 30 with the liquid or solid starting materials, a vapor of organic material is generated, which is fed with a carrier gas, in particular nitrogen, which is fed through an inert gas 17 into the steam generator 30 through a feed line 8 a gas inlet member 7 is transported, which gas inlet member 7 is located within the housing cavity of the reactor housing 1.
  • a pump 16 is also provided, which is fluidly connected to a gas outlet channel 15, with a non-illustrated control and a throttle valve, not shown, within the housing cavity of the reactor housing a total pressure in the range between 0.1 and 10 mbar can be adjusted.
  • inert gas supply lines 17 are also provided for introducing the inert gas, for example. Nitrogen in an environmental chamber 3, which surrounds the actual process chamber 2 spatially.
  • the environmental chamber 3 has outer walls which are formed by the walls of the reactor housing 1 and which are cold. Its temperature is about 80 degrees in a conventional coating process. However, it is also envisaged to heat the entire reactor housing 1 in a "bake-off step.” This takes place at temperatures between 120 ° C. and 150 ° C.
  • the wall of the reactor housing 1 is thus preferably designed such that it has a temperature between Room temperature and 150 degrees can take.
  • the process chamber 2 is bounded at the top by a gas outlet surface 9 of the gas inlet member 7 which has a multiplicity of gas outlet openings through which the process gas formed by the organic vapor and the inert gas flow into the process chamber 2 arranged below the gas outlet surface 9 can.
  • the bottom of the process chamber 2 is formed by a bearing surface of a cooled substrate holder 14.
  • the substrate 13 is located, which is covered by a mask 12.
  • the mask 12 has structures on the order of micrometers in order to deposit a structured layer of the organic material on the surface of the substrate 13 facing the gas outlet surface 9.
  • the layer is an OLED layer.
  • the process chamber 2 is surrounded by walls 10, 11.
  • the walls 10, 11 can be actively heated. However, they are at least heated by the heat released by the heated gas inlet member 7.
  • the emerging from the gas outlet surface 9 process gas and in particular the carrier gas exits the gas outlet channel 15 from the process chamber, wherein the process chamber walls 10, 11 Gasleitbleche 19 to direct the process gas in the gas outlet channel 19.
  • the substrate holder 14 can be lowered from the coating position shown in FIG. 1 into a loading / unloading position shown in FIG.
  • a screen plate 18 stored in a storage chamber 6 is brought in front of the gas outlet surface 9 of the gas inlet member 7 in order to shield the mask 12 or the substrate against heat radiated from the gas inlet member 7.
  • the storage chamber 6, in which the shield plate 18 during the coating stored operation can be flushed by means of an inert gas inlet 17 with inert gas.
  • the substrate 13 accommodates when it is against another substrate geweck-.
  • the transfer chamber 5, 5 is provided for the mask 12, in which the mask 12 is recorded at a mask change.
  • the transfer chamber 4, 5 are provided with inert gas supply lines 17 to flush the transfer chamber 4, 5 with an inert gas.
  • the reference numerals 20, 21, 23 cooling panels are designated, which have a surface which can be cooled to a temperature which is less than 200 K, preferably less than 170 K and more preferably less than 150 K.
  • the surface temperature of the cooling panels 20, 21, 22, 23 is above the condensation temperature of the carrier gas, if nitrogen is used above 77 K, in particular above 100 K.
  • the cryopanel 20, 21, 22, 23 can be cooled with a refrigeration unit.
  • the reference numeral 24 exemplifies a refrigeration unit for cooling the cooling panel 20 disposed in the environmental chamber 3 within which the process chamber 2 is located.
  • a supply line 25 feeds the cooling panel 20 with a cooled cooling liquid. This is transported with a derivative 26 back to the cooling unit 24.
  • other devices / methods are provided to cool the cryopanels 20, 21, 22, 23, for example, the panel may be cooled over a cold surface. It is also possible, stacked cooling panels too between which there is a gap into which the water vapor can diffuse.
  • a process chamber wall 11 which is located between the cooling panel 22 and the gas inlet member 7 and / or between the cooling panel 20 and the substrate holder 14, forms a heat shield, with which is prevented that the cooling panel 20 a the temperature profile within the process chamber 2 gets an influencing effect.
  • the heat shield 11 merely forms a heat flow resistance.
  • the embodiment shown in Figure 3 differs from the embodiment shown in Figures 1 and 2 essentially in that the cooling zone is formed in the region of the environmental chamber 3 by a suction port 28 of a cryopump 29. Again, a heat shield 27 may be arranged in front of the intake opening 28.
  • cooling panel 20, 21, 22, 23, 24 is advantageous because it produces only small vibrations that could affect the adjustment of the mask. It is considered advantageous if the cooling zones, which are formed by the cooling panels or cryo-pump, lie outside the process chamber 2.
  • the invention is used in particular in a system in which temperatures prevail within the process chamber, which are in a range between 20 degrees Celsius and 150 degrees Celsius.
  • the fiction, contemporary method is not limited to the pressure range of 0.1 to 10 mbar, but also includes the range of 0.1 mbar to 1000 mbar.
  • the cooling cycles are preferably adapted to the adjustment steps of the mask. FIG.
  • FIG. 4 schematically shows a device for depositing layers of an organic material on a substrate, in which the gas inlet member 7 is supplied with an organic vapor which is produced by evaporation of a liquid or pulverulent organic starting material which together is fed with an inert gas fed through the Inertgaszutechnisch 17 by a supply line in the gas inlet member 7, where it exits through gas outlet openings in the process chamber to condense on resting on the substrate holder 14 substrate.
  • the process chamber is bounded by process chamber walls 10, 11.
  • the cavity of the reactor housing 1 is connected via a gate 34 which can be closed in a gas-tight manner to a lock chamber 33 of a lock into which an inert gas can be fed by means of an inert gas feed line 17.
  • lock chamber 33 In the lock chamber 33 is a cooling zone, as has been previously described.
  • the lock chamber 33 is connected via a further gate 34 with an external chamber 35, into which by inert gas supply 17 also an inert gas can be fed.
  • external chamber 35 In the external chamber 35 is a cooling zone 20, as has been previously described.
  • FIG. 5 shows an exemplary embodiment of a cooling panel arrangement in which a first cooling panel 20 is arranged parallel to a second cooling panel 21. Between the two cooling panels 20, 21 extends a uniform gap width h exhibiting gap. The lateral dimension of the cooling panels 20, 21 is greater than the gap width h. The gap width h in the exemplary embodiment is about 5 to 20 mm and is greater than ten times the mean free path length in a nitrogen atmosphere of 1 mbar.
  • Figure 6 shows an arrangement similar to Figure 5 but after a prolonged use of the cooling panels 20, 21, for freezing water vapor from a nitrogen atmosphere. An ice layer 36 has formed. det, which has a greater layer thickness at the edge of the cooling panel arrangement than in the central area.
  • the exemplary embodiment illustrated in FIG. 7 provides that the cooling panels 20, 21 are at an angle ⁇ to one another.
  • the cooling panels 20, 21 are each V-shaped, with the V-vertex facing each other.
  • This is an arrangement of non-plane-parallel cooling panels 20, 21, in which the width of the gap between the two cooling panels 20, 21 at the edge is greatest and drops continuously towards the center, where the gap width has a minimum.
  • 8 shows another embodiment in which a plurality of cooling panels 20, 21, 22, 23 are arranged in a star shape around a center. The center forms an axis in which all the cooling panels 20, 21, 22, 23 are located. The axis preferably extends perpendicular to a wall of the reactor housing.
  • FIG. 9 shows an exemplary embodiment in which the cooling panel 20 has a grid structure. It form polygonal passage openings, in which water vapor can flow in nitrogen. However, it is also provided that no flow flows through the openings 37, but that water vapor diffuses into the openings 37.
  • the embodiment shown in Figure 10 shows a heat sink in the form of a cooling panel 20, wherein the heat sink has a plurality of circular openings. These openings may also be passage openings. The openings are formed here as holes.
  • a device which is characterized by a cooling zone 20, 28 and means 24, 29, with which the cooling zone 20, 28 can be cooled to a temperature below 200 K;
  • a device which is characterized in that in the reactor housing 1 at least one process chamber 2 containing the gas inlet element 7 and the substrate holder 14 and at least one housing chamber 3, 4 connected therewith, but separate from the process chamber walls 10, 11, 5, 6 are provided, wherein the cooling zone 20, 28 of the housing chamber 3, 4, 5, 6 is assigned, which has a feed opening 18 for feeding the inert gas;
  • a device which is characterized in that between the housing chamber 3 and the process chamber 2 a the substrate holder 14 and the gas inlet member 7 with respect to the cooling zone 20, 28 shielding heat shield 11 is provided;
  • a device which is characterized in that the cooling zone is formed by a suction port 28 of a cryopump.
  • the housing chamber is a transfer chamber 4, 5 for receiving a substrate 13 or a mask 12 or an environmental space surrounding the process chamber 2, or a storage chamber 6 is for a screen plate 18, which can be brought before the gas outlet surface 9 of the gas inlet member 7 in a change of the mask 12 and / or a change of the substrate 13;
  • a device which is characterized in that the process chamber walls 10, 11 are actively heated
  • a device which is characterized in that the cooling zone 20 is arranged in a lock chamber 33 of a lock and / or in an external housing 35 connected to the lock with the reactor housing 1;
  • cooling zone comprises a first cooling element 20 spaced from a second cooling element 21, the distance h being greater than the mean free path length in a nitrogen atmosphere having a partial pressure from 0.1 mbar to
  • the distance h is in the range between 4 and 20 mm, preferably in a range between 4 and 14 mm and / or that the cooling zone is formed by a cooling element 20 having openings 37.
  • All disclosed features are essential to the invention (individually, but also in combination with one another).
  • the disclosure content of the associated / attached priority documents (copy of the prior application) is hereby also incorporated in full in the disclosure of the application, also for the purpose of including features of these documents in claims of this application.
  • the subclaims characterize, even without the features of a claimed claim, with their features independent inventive developments of the prior art, in particular in order to make divisional applications based on these claims.
  • each claim may additionally have one or more of the features described in the preceding description, in particular with reference numerals and / or given in the reference numerals.
  • the invention also relates to design forms in which individual of the features mentioned in the above description are not realized, in particular insofar as they are recognizable dispensable for the respective purpose or can be replaced by other technically equivalent means. List of reference numbers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

L'invention concerne un dispositif pour déposer des couches en un matériau organique sur un substrat (13), présentant un organe d'entrée de gaz (7) pourvu d'un dispositif de chauffage (31), disposé dans une enceinte (1) de réacteur ; un générateur de vapeur (30), qui permet d'amener une matière de départ organique en forme vapeur et qui est relié à l'organe d'entrée de gaz (7) par une conduite (8) via laquelle la vapeur produite et un gaz inerte injecté dans le générateur de vapeur (30) sont injectés dans l'organe d'entrée de gaz (7) ; et un support de substrat (14), pourvu d'un dispositif de refroidissement (32), disposé dans l'enceinte (1) de réacteur pour supporter le substrat (13). Le dispositif présente une zone de refroidissement (20, 28) et des moyens (24, 29) qui permettent de refroidir la zone de refroidissement (20, 28) à une température inférieure à 200 K, la zone de refroidissement étant formée par un panneau de refroidissement (20), présentant une surface refroidie, qui est entouré par une atmosphère de gaz inerte d'au moins 0,1 mbar pour diminuer la pression partielle de l'eau.
PCT/EP2018/056679 2017-03-24 2018-03-16 Dispositif et procédé pour abaisser la pression partielle de h2o dans un dispositif de revêtement par dépôt en phase vapeur organique Ceased WO2018172211A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020197029452A KR20190132649A (ko) 2017-03-24 2018-03-16 Ovpd-코팅 디바이스 내에서 h2o-부분 압력을 감소시키기 위한 장치 및 방법
CN201880020824.1A CN110462094A (zh) 2017-03-24 2018-03-16 用于在ovpd覆层设备内降低水的分压的设备和方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017106431.1A DE102017106431A1 (de) 2017-03-24 2017-03-24 Vorrichtung und Verfahren zum Herabsetzen des Wasserpartialdrucks in einer OVPD-Beschichtungseinrichtung
DE102017106431.1 2017-03-24

Publications (1)

Publication Number Publication Date
WO2018172211A1 true WO2018172211A1 (fr) 2018-09-27

Family

ID=61750103

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/056679 Ceased WO2018172211A1 (fr) 2017-03-24 2018-03-16 Dispositif et procédé pour abaisser la pression partielle de h2o dans un dispositif de revêtement par dépôt en phase vapeur organique

Country Status (5)

Country Link
KR (1) KR20190132649A (fr)
CN (1) CN110462094A (fr)
DE (1) DE102017106431A1 (fr)
TW (1) TWI863888B (fr)
WO (1) WO2018172211A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240102154A1 (en) * 2020-02-24 2024-03-28 Applied Materials, Inc. Vacuum processing apparatus, vacuum system, gas partial pressure control assembly, and method of controlling partial pressure of a gas in a vacuum processing chamber
DE102020116271A1 (de) 2020-06-19 2021-12-23 Apeva Se Vorrichtung und Verfahren zum Verdampfen eines organischen Pulvers

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340460A (en) * 1990-08-22 1994-08-23 Anelva Corporation Vacuum processing equipment
WO2001061071A2 (fr) * 2000-02-16 2001-08-23 Aixtron Ag Procede de production de revetement par condensation
DE102007054851A1 (de) 2007-11-16 2009-05-20 Createc Fischer & Co. Gmbh MBE-Einrichtung und Verfahren zu deren Betrieb
US20110117289A1 (en) 2007-12-28 2011-05-19 Ulvac, Inc. Deposition Apparatus and Deposition Method
EP2264224B1 (fr) 2009-06-18 2012-05-02 Riber Appareil pour le dépôt d'une couche mince de matériau sur un substrat et procédé de régénération pour un tel appareil
US20140302624A1 (en) 2013-04-04 2014-10-09 Samsung Display Co., Ltd. Deposition apparatus, method of forming thin film using the same, and method of manufacturing organic light emitting display apparatus
DE202015101792U1 (de) 2015-04-13 2015-04-28 Aixtron Se Kühlfalle
DE102014109195A1 (de) 2014-07-01 2016-01-07 Aixtron Se Vorrichtung und Verfahren zum Erzeugen eines Dampfes aus mehreren flüssigen oder festen Ausgangsstoffen für eine CVD- oder PVD-Einrichtung
DE102015118765A1 (de) 2014-11-20 2016-06-09 Aixtron Se Vorrichtung zum Beschichten eines großflächigen Substrats

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5520002A (en) * 1995-02-01 1996-05-28 Sony Corporation High speed pump for a processing vacuum chamber
KR100443415B1 (ko) * 1996-02-23 2004-11-03 동경 엘렉트론 주식회사 열처리장치
US6123993A (en) * 1998-09-21 2000-09-26 Advanced Technology Materials, Inc. Method and apparatus for forming low dielectric constant polymeric films
JP4778655B2 (ja) * 2000-02-04 2011-09-21 アイクストロン、アーゲー １つまたは多くの被膜を基板に沈積する方法および装置
JP4378014B2 (ja) * 2000-02-17 2009-12-02 株式会社アルバック 反応性ガスを利用する真空処理装置
JP4470274B2 (ja) * 2000-04-26 2010-06-02 東京エレクトロン株式会社 熱処理装置
CN1280023C (zh) * 2004-08-16 2006-10-18 邵力为 古籍图书和文献的聚对二甲苯表面涂敷设备及其涂敷工艺
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
JP4961701B2 (ja) * 2005-09-14 2012-06-27 パナソニック株式会社 プラズマディスプレイパネルの製造方法
CN2869035Y (zh) * 2005-12-12 2007-02-14 山东省药用玻璃股份有限公司 高分子聚合膜药用瓶塞镀膜设备
CN102012333B (zh) * 2009-09-04 2013-11-06 中国石油化工股份有限公司 惰性气体纯化富集装置及使用方法
DE102010000447A1 (de) * 2010-02-17 2011-08-18 Aixtron Ag, 52134 Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte
CN102465260A (zh) * 2010-11-17 2012-05-23 北京北方微电子基地设备工艺研究中心有限责任公司 腔室组件及应用该腔室组件的半导体处理设备
DE102011051261A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs insbesondere Verdampfungsvorrichtung dazu
CN104947039B (zh) * 2014-03-24 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 隔热挡板及反应腔室
TWI622091B (zh) * 2015-06-18 2018-04-21 思可林集團股份有限公司 基板處理裝置
TWM538656U (zh) * 2016-11-11 2017-03-21 優材科技有限公司 加熱器模組及薄膜沉積裝置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340460A (en) * 1990-08-22 1994-08-23 Anelva Corporation Vacuum processing equipment
WO2001061071A2 (fr) * 2000-02-16 2001-08-23 Aixtron Ag Procede de production de revetement par condensation
DE102007054851A1 (de) 2007-11-16 2009-05-20 Createc Fischer & Co. Gmbh MBE-Einrichtung und Verfahren zu deren Betrieb
US20110117289A1 (en) 2007-12-28 2011-05-19 Ulvac, Inc. Deposition Apparatus and Deposition Method
EP2264224B1 (fr) 2009-06-18 2012-05-02 Riber Appareil pour le dépôt d'une couche mince de matériau sur un substrat et procédé de régénération pour un tel appareil
US8858713B2 (en) 2009-06-18 2014-10-14 Riber Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus
US20140302624A1 (en) 2013-04-04 2014-10-09 Samsung Display Co., Ltd. Deposition apparatus, method of forming thin film using the same, and method of manufacturing organic light emitting display apparatus
DE102014109195A1 (de) 2014-07-01 2016-01-07 Aixtron Se Vorrichtung und Verfahren zum Erzeugen eines Dampfes aus mehreren flüssigen oder festen Ausgangsstoffen für eine CVD- oder PVD-Einrichtung
DE102015118765A1 (de) 2014-11-20 2016-06-09 Aixtron Se Vorrichtung zum Beschichten eines großflächigen Substrats
DE202015101792U1 (de) 2015-04-13 2015-04-28 Aixtron Se Kühlfalle

Also Published As

Publication number Publication date
KR20190132649A (ko) 2019-11-28
TW201903185A (zh) 2019-01-16
TWI863888B (zh) 2024-12-01
CN110462094A (zh) 2019-11-15
DE102017106431A1 (de) 2018-09-27

Similar Documents

Publication Publication Date Title
EP2060662A2 (fr) Dispositif MBE et son procédé de fonctionnement
DE102010000447A1 (de) Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte
DE102014109194A1 (de) Vorrichtung und Verfahren zum Erzeugen eines Dampfes für eine CVD- oder PVD-Einrichtung
DE69510132T2 (de) Vakuumkammer für Ultrahochvakuumbehandlung bei hoher Temperatur
DE102008026001B4 (de) Verfahren und Vorrichtung zur Erzeugung und Bearbeitung von Schichten auf Substraten unter definierter Prozessatmosphäre und Heizelement
WO2018172211A1 (fr) Dispositif et procédé pour abaisser la pression partielle de h2o dans un dispositif de revêtement par dépôt en phase vapeur organique
EP3610050B1 (fr) Dispositif de revêtement et procédés permettant le dépôt réactif en phase vapeur sous vide sur un substrat
DE102009011495B4 (de) Verfahren und Vorrichtung zur Behandlung von Substraten unter Verwendung einer Gasseparation
DE102018115410A1 (de) Vakuumanordnung und Verfahren
EP2870623A1 (fr) Chambre de traitement, système et procédé de traitement d'un substrat revêtu
DE102013109210A1 (de) Evakuierbare Kammer, insbesondere mit einem Spülgas spülbare Beladeschleuse
DE102012213095A1 (de) Gasseparation
DE102011011279A1 (de) Apparatur zur Leitung des Gasstromes beim Belüften innerhalb eines Vakuumgehäuses
DE102009009022A1 (de) Verfahren und Vorrichtung zur Beschichtung von flachen Substraten mit Chalkogenen
WO2017216014A1 (fr) Dispositif et procédé de revêtement
DE3635941C2 (fr)
DE102008026000B4 (de) Verfahren und Vorrichtung zur Beschichtung flächiger Substrate
DE102013106828B3 (de) Anlagenkammer einer Durchlauf-Substratbehandlungsanlage und Verfahren zu deren Evakuierung
DE102009021563B4 (de) Einrichtung zum Transport von Substraten in und aus Vakuumanlagen
DE102012110287B4 (de) Substratbehandlungsanlage und Verfahren zur Druckminderung
DE102023105638A1 (de) Kammerdeckel und Vakuumkammer
DE102006013801A1 (de) Gaseinlassorgan mit gelochter Isolationsplatte
DE102013106734B4 (de) Evakuierbare Anlagenkammer einer Durchlauf-Substratbehandlungsanlage und Verfahren zum Betrieb der Anlage
DE102013105116A1 (de) Vakuumbeschichtungsanlage und Verfahren zum Betreiben einer Vakuumbeschichtungsanlage
DE102013106735A1 (de) Vakuumkammer einer Durchlauf-Substratbehandlungsanlage und Verfahren zu deren Betrieb

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18712551

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20197029452

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 18712551

Country of ref document: EP

Kind code of ref document: A1