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KR20190132649A - Ovpd-코팅 디바이스 내에서 h2o-부분 압력을 감소시키기 위한 장치 및 방법 - Google Patents

Ovpd-코팅 디바이스 내에서 h2o-부분 압력을 감소시키기 위한 장치 및 방법 Download PDF

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Publication number
KR20190132649A
KR20190132649A KR1020197029452A KR20197029452A KR20190132649A KR 20190132649 A KR20190132649 A KR 20190132649A KR 1020197029452 A KR1020197029452 A KR 1020197029452A KR 20197029452 A KR20197029452 A KR 20197029452A KR 20190132649 A KR20190132649 A KR 20190132649A
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KR
South Korea
Prior art keywords
cooling
inert gas
chamber
substrate
inlet member
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Ceased
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KR1020197029452A
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English (en)
Korean (ko)
Inventor
알렉산더 게오르기
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아익스트론 에스이
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Publication date
Application filed by 아익스트론 에스이 filed Critical 아익스트론 에스이
Publication of KR20190132649A publication Critical patent/KR20190132649A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020197029452A 2017-03-24 2018-03-16 Ovpd-코팅 디바이스 내에서 h2o-부분 압력을 감소시키기 위한 장치 및 방법 Ceased KR20190132649A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017106431.1A DE102017106431A1 (de) 2017-03-24 2017-03-24 Vorrichtung und Verfahren zum Herabsetzen des Wasserpartialdrucks in einer OVPD-Beschichtungseinrichtung
DE102017106431.1 2017-03-24
PCT/EP2018/056679 WO2018172211A1 (fr) 2017-03-24 2018-03-16 Dispositif et procédé pour abaisser la pression partielle de h2o dans un dispositif de revêtement par dépôt en phase vapeur organique

Publications (1)

Publication Number Publication Date
KR20190132649A true KR20190132649A (ko) 2019-11-28

Family

ID=61750103

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197029452A Ceased KR20190132649A (ko) 2017-03-24 2018-03-16 Ovpd-코팅 디바이스 내에서 h2o-부분 압력을 감소시키기 위한 장치 및 방법

Country Status (5)

Country Link
KR (1) KR20190132649A (fr)
CN (1) CN110462094A (fr)
DE (1) DE102017106431A1 (fr)
TW (1) TWI863888B (fr)
WO (1) WO2018172211A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114630922B (zh) * 2020-02-24 2025-03-11 应用材料公司 真空处理设备、真空系统、气体分压控制组件和控制真空处理腔室中气体分压的方法
DE102020116271A1 (de) 2020-06-19 2021-12-23 Apeva Se Vorrichtung und Verfahren zum Verdampfen eines organischen Pulvers

Family Cites Families (26)

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JPH0830260B2 (ja) * 1990-08-22 1996-03-27 アネルバ株式会社 真空処理装置
US5520002A (en) * 1995-02-01 1996-05-28 Sony Corporation High speed pump for a processing vacuum chamber
WO1997031389A1 (fr) * 1996-02-23 1997-08-28 Tokyo Electron Limited Dispositif de traitement thermique
US6123993A (en) * 1998-09-21 2000-09-26 Advanced Technology Materials, Inc. Method and apparatus for forming low dielectric constant polymeric films
EP1252363B1 (fr) * 2000-02-04 2003-09-10 Aixtron AG Dispositif et procede pour deposer une ou plusieurs couches sur un substrat
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
JP4378014B2 (ja) * 2000-02-17 2009-12-02 株式会社アルバック 反応性ガスを利用する真空処理装置
JP4470274B2 (ja) * 2000-04-26 2010-06-02 東京エレクトロン株式会社 熱処理装置
CN1280023C (zh) * 2004-08-16 2006-10-18 邵力为 古籍图书和文献的聚对二甲苯表面涂敷设备及其涂敷工艺
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
JP4961701B2 (ja) * 2005-09-14 2012-06-27 パナソニック株式会社 プラズマディスプレイパネルの製造方法
CN2869035Y (zh) * 2005-12-12 2007-02-14 山东省药用玻璃股份有限公司 高分子聚合膜药用瓶塞镀膜设备
DE102007054851A1 (de) 2007-11-16 2009-05-20 Createc Fischer & Co. Gmbh MBE-Einrichtung und Verfahren zu deren Betrieb
KR20100086508A (ko) 2007-12-28 2010-07-30 가부시키가이샤 아루박 성막 장치 및 성막 방법
ES2385460T3 (es) 2009-06-18 2012-07-25 Riber Aparato para depositar una película delgada de material sobre un sustrato y procedimiento de regenaración para un aparato de este tipo
CN102012333B (zh) * 2009-09-04 2013-11-06 中国石油化工股份有限公司 惰性气体纯化富集装置及使用方法
DE102010000447A1 (de) * 2010-02-17 2011-08-18 Aixtron Ag, 52134 Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte
CN102465260A (zh) * 2010-11-17 2012-05-23 北京北方微电子基地设备工艺研究中心有限责任公司 腔室组件及应用该腔室组件的半导体处理设备
DE102011051261A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs insbesondere Verdampfungsvorrichtung dazu
KR102052074B1 (ko) 2013-04-04 2019-12-05 삼성디스플레이 주식회사 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
CN104947039B (zh) * 2014-03-24 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 隔热挡板及反应腔室
DE102014109195A1 (de) 2014-07-01 2016-01-07 Aixtron Se Vorrichtung und Verfahren zum Erzeugen eines Dampfes aus mehreren flüssigen oder festen Ausgangsstoffen für eine CVD- oder PVD-Einrichtung
DE102015118765A1 (de) 2014-11-20 2016-06-09 Aixtron Se Vorrichtung zum Beschichten eines großflächigen Substrats
DE202015101792U1 (de) 2015-04-13 2015-04-28 Aixtron Se Kühlfalle
TWI622091B (zh) * 2015-06-18 2018-04-21 思可林集團股份有限公司 基板處理裝置
TWM538656U (zh) * 2016-11-11 2017-03-21 優材科技有限公司 加熱器模組及薄膜沉積裝置

Also Published As

Publication number Publication date
DE102017106431A1 (de) 2018-09-27
TWI863888B (zh) 2024-12-01
WO2018172211A1 (fr) 2018-09-27
TW201903185A (zh) 2019-01-16
CN110462094A (zh) 2019-11-15

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