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WO2018157492A1 - Procédé de préparation de cellule solaire perc de type p, cellule solaire perc de type p, ensemble de cellules et système de cellules - Google Patents

Procédé de préparation de cellule solaire perc de type p, cellule solaire perc de type p, ensemble de cellules et système de cellules Download PDF

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Publication number
WO2018157492A1
WO2018157492A1 PCT/CN2017/087355 CN2017087355W WO2018157492A1 WO 2018157492 A1 WO2018157492 A1 WO 2018157492A1 CN 2017087355 W CN2017087355 W CN 2017087355W WO 2018157492 A1 WO2018157492 A1 WO 2018157492A1
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Prior art keywords
silicon wafer
solar cell
type
perc solar
silicon
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PCT/CN2017/087355
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English (en)
Chinese (zh)
Inventor
何达能
方结彬
陈刚
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/85—Protective back sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • a crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using a photovoltaic effect.
  • a new hole-electron pair is formed, and the electric field at the PN junction Under the action, the holes flow from the N zone to the P zone, and the electrons flow from the P zone to the N zone, and a current is formed after the circuit is turned on.
  • Conventional crystalline silicon solar cells basically adopt only the front passivation technology, and a silicon nitride film is deposited on the front side of the silicon wafer by PECVD to reduce the recombination rate of the minority on the front surface, which can greatly increase the open circuit voltage of the crystalline silicon battery and Short-circuit current, thereby improving the photoelectric conversion efficiency of the crystalline silicon solar cell.
  • the back passivation technique is to deposit an aluminum oxide film and a silicon nitride film on the back side of the silicon wafer, and the front side of the silicon wafer is also deposited with a silicon nitride film according to a conventional process.
  • the mainstream practice of PERC batteries is to deposit a silicon nitride film on the front and back sides of the silicon wafer.
  • the function of the back silicon nitride film is to protect the passivation of the aluminum oxide film.
  • the function of the front silicon nitride film has two aspects.
  • the reflection of the frontal sunlight is reduced, and on the other hand, the front side of the silicon wafer is passivated.
  • the front silicon nitride film, the back silicon nitride film and the back aluminum oxide film all need to be deposited one by one. Many operations and steps are likely to cause scratching of the silicon wafer, and the fragmentation rate is improved, which is disadvantageous for reducing the defect rate of the product. Therefore, there is a need to provide a new method for preparing a P-type PERC solar cell to alleviate the impact of the above technical problems on the product.
  • the technical problem to be solved by the present invention is to provide a preparation method of a P-type PERC solar cell, which can improve production efficiency, reduce scratching of the silicon wafer, reduce the fragmentation rate, and improve the product qualification rate.
  • the technical problem to be solved by the present invention is also to provide a P-type PERC solar cell, which can Improve production efficiency, reduce scratching of silicon wafers, reduce fragmentation rate, and improve product qualification rate.
  • the technical problem to be solved by the present invention is also to provide a P-type PERC solar cell module, which can improve production efficiency, reduce scratching of the silicon wafer, reduce the fragmentation rate, and improve the product qualification rate.
  • the technical problem to be solved by the present invention is also to provide a P-type PERC solar cell system, which can improve production efficiency, reduce scratching of silicon wafers, reduce fragmentation rate, and improve product qualification rate.
  • the present invention provides a method for preparing a P-type PERC solar cell, comprising the following steps:
  • the silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.
  • the silicon wafer in the step (6) is suspended in the process chamber by the interaction of the upper and lower gases in the process chamber of the PECVD double-sided deposition apparatus.
  • a silicon nitride film is simultaneously deposited on both sides of the silicon wafer.
  • the gas injected in the process chamber of the PECVD double-sided deposition apparatus is ammonia gas and silane.
  • the rate of silane gas sprayed downward from the aeration plate in the process chamber is 1500-1800 sccm, and the rate of ammonia gas is 4000-10000 sccm; the aeration plate under the process chamber The rate of spraying the silane gas upward is 1800-3000 sccm, and the rate of introducing the ammonia gas is 5000-12000 sccm;
  • the reaction pressure is 1-3 Torr and the reaction duration is 40-80 s.
  • a step of back-polishing the back surface of the silicon wafer is added between the steps (3) and (4).
  • the silicon nitride film on the back surface and the back surface aluminum oxide film are broken, so that the all-aluminum back electric field and P-type silicon forms a local contact.
  • the present invention also provides a P-type PERC solar cell comprising a back electrode, an all-aluminum back electric field, a back silicon nitride film, a back aluminum oxide film, a P-type silicon, an N-type emitter, and a front silicon nitride film.
  • a front electrode, the back electrode, the all-aluminum back electric field, the back silicon nitride film, the back aluminum oxide film, the P-type silicon, the N-type emitter, the front silicon nitride film, and the front electrode are sequentially connected from bottom to top,
  • the back silicon nitride film and the back aluminum oxide film are provided with a laser grooving zone, and the all-aluminum back electric field is partially contacted with the P-type silicon by providing a local aluminum back field in the laser grooving zone;
  • the back silicon nitride film and the front silicon nitride film were deposited by a PECVD double-sided deposition apparatus simultaneously on the front and back sides of the silicon wafer.
  • the back silicon nitride film has a thickness of 80-300 nm.
  • the back aluminum oxide film has a thickness of 2 to 30 nm.
  • the present invention also provides a PERC solar system comprising a PERC solar cell, which is a P-type PERC solar cell of the present invention.
  • the invention discloses a preparation method of a P-type PERC solar cell, which is formed by depositing a silicon nitride film on the front and back sides of a silicon wafer by a PECVD double-sided deposition apparatus, and the double-deposited silicon nitride film can avoid multiple deposition steps on the one hand.
  • the production time is saved and the production efficiency is improved.
  • the damage rate of the silicon wafer is increased due to multiple deposition operations.
  • the invention simplifies the deposition process, reduces the scratch of the silicon wafer, reduces the fragmentation rate, and improves the product yield.
  • the P-type PERC solar cell prepared by the preparation method greatly reduces the surface sub-composite on the back surface of the silicon wafer and improves the conversion efficiency of the battery.
  • FIG. 1 is a process flow diagram of a method for preparing a P-type PERC solar cell of the present invention
  • FIG. 2 is a schematic structural view of a PEVCD double-sided deposition apparatus used in a method for preparing a P-type PERC solar cell according to the present invention
  • FIG. 3 is a schematic view showing the structure of a P-type PERC solar cell of the present invention.
  • the present invention provides a method for preparing a P-type PERC solar cell, comprising the following steps:
  • a wet or dry etching technique is used to form a pile on the surface of the silicon wafer by a texturing device.
  • the diffusion of the step S101 of the preparation method of the present invention is that the silicon wafer is placed in a thermal diffusion furnace for diffusion, and the N-type emitter diffusion is formed above the P-type silicon to control the temperature in the range of 800 ° C to 900 ° C.
  • the sheet resistance is 90-150 ohms/ ⁇ .
  • a phosphorous silicon glass layer is formed on the front and back sides of the silicon wafer.
  • the formation of the phosphosilicate glass layer is due to the fact that during the diffusion process, POCl 3 reacts with O 2 to form P 2 O 5 deposited on the surface of the silicon wafer.
  • the reaction of P 2 O 5 with Si generates SiO 2 and phosphorus atoms, so that a layer of SiO 2 containing phosphorus is formed on the surface of the silicon wafer, which is called a phosphosilicate glass.
  • the phosphosilicate glass layer can collect impurities in the silicon wafer during diffusion, and can further reduce the impurity content of the solar cell.
  • the diffused silicon wafer is placed in a volume ratio of 1:5 HF (mass fraction 40%-50%) and HNO 3 (mass fraction 60%-70%) mixed solution acid bath for 15s to remove phosphorus silicon. Glass and surrounding PN junction.
  • the presence of the phosphosilicate glass layer tends to cause chromatic aberration of PECVD and shedding of Si x N y , and the phosphorus-phosphorus glass layer contains a large amount of phosphorus and impurities migrated from the silicon wafer, and thus it is necessary to remove the phosphosilicate glass layer.
  • step S103 performing back polishing on the back surface of the silicon wafer, and determining whether to perform the step S103 according to the situation.
  • An aluminum oxide film is deposited on the back side of the wafer using a conventional PECVD apparatus, an ALD apparatus, or an APCVD apparatus.
  • the present invention uses a new PEVCD double-sided deposition equipment, as shown in Figure 2, the PEVCD double-sided deposition equipment includes a loading zone 1, a heating chamber 2, a process The cavity 3, the cooling zone 4 and the blanking zone 5, wherein the upper aeration plate 6 and the lower aeration plate 7 of the process chamber are provided with dense vent holes, and ammonia gas and silane gas are operated from the upper aeration plate 6 and the lower aeration plate 7 during operation.
  • the rate of silane gas sprayed downward from the aeration plate 6 in the process chamber is 1500-1800 sccm, and the rate of introduction of ammonia gas is 4000-6000 sccm; the rate of silane gas ejected upward from the aeration plate 7 in the process chamber is 1800- 3000sccm, the rate of ammonia gas is 5000-8000sccm.
  • the silicon wafer can be suspended in the process chamber, and at a pressure of 1-3 Torr and a temperature of 400-500 ° C, ammonia gas and silane gas react with the silicon wafer, on the front side of the silicon wafer.
  • the silicon nitride film is simultaneously formed on the reverse side; and the upper aeration plate 6 and the lower aeration plate 7 are arranged in parallel obliquely, and the plane between the two aeration plates and the ground is 1-5°, thereby the side of the silicon wafer under the action of gravity
  • the coating is applied to the side of the process chamber for double-sided deposition.
  • the double-sided deposition of the silicon nitride film can avoid multiple deposition steps on one hand, save production time and improve production efficiency; on the other hand, the deposition rate of the silicon wafer is increased due to multiple deposition operations, and the present invention simplifies the deposition process. Reduce the scratch of the silicon wafer, reduce the fragmentation rate, and improve the product qualification rate.
  • Step S106 after performing laser grooving on the back surface, penetrating the silicon nitride film on the back surface and the back aluminum oxide film to form a laser grooving zone, and the step S108 is to print the aluminum paste on the back side of the silicon wafer, drying, and sintering the all-aluminum back electric field and P-type silicon forms a local contact.
  • the silicon wafer is sintered at a high temperature to form a back electrode, an all-aluminum back electric field, and a front electrode.
  • the silicon wafer is subjected to anti-LID annealing to obtain a P-type PERC solar cell.
  • LID Light Induced Degradation caused by solar cells and components during illumination
  • the present invention also provides a P-type PERC solar cell, including The back electrode 9, the all-aluminum back electric field 10, the back silicon nitride film 11, the back aluminum oxide film 12, the P-type silicon 13, the N-type emitter 14, the front silicon nitride film 15, and the front surface electrode 16, the back surface electrode 9
  • An all-aluminum back electric field 10, a back silicon nitride film 11, a back aluminum oxide film 12, a P-type silicon 13, an N-type emitter 14, a front silicon nitride film 15, and a front surface electrode 16 are sequentially connected from bottom to top, the back surface
  • the silicon nitride film 11 and the back aluminum oxide film 12 are provided with a laser grooving zone 17, and the all-aluminum back electric field 10 is filled with the aluminum paste in the laser grooving zone 17 to form a partial contact with the P-type silicon;
  • the back silicon nitride film and the front silicon nitride film were deposited by a PECVD double-sided deposition apparatus simultaneously on the front and back sides of the silicon wafer.
  • the P-type PERC solar cell of the present invention has a passivation film on the front and back sides of the silicon wafer, and a groove on the back passivation film, so that the aluminum back field and P-type silicon forms local contact, which greatly reduces surface recombination and improves battery conversion efficiency.
  • the front and back passivation films of the silicon wafer of the present invention are simultaneously deposited by a PECVD double-sided deposition apparatus, which can reduce the scratch of the silicon wafer, reduce the fragmentation rate, and have better stability of the battery performance.
  • the thickness of the front and back surfaces of the silicon wafer is different.
  • the silicon nitride film on the back surface is relatively thick, and the thickness is 80-300 nm. It is used for passivation and can protect the aluminum oxide film.
  • the front silicon nitride film is thinner and has a thickness of 50-120 nm, and is mainly used as an anti-reflection film.
  • the present invention also discloses a P-type PERC solar cell module comprising a P-type PERC solar cell and a packaging material, and the PERC solar cell is any of the P-type PERC solar cells described above.
  • the high-permeability tempered glass, the ethylene-vinyl acetate copolymer EVA, the PERC solar cell, the ethylene-vinyl acetate copolymer EVA, and the high permeability are connected in this order from top to bottom. Composition of tempered glass.
  • the present invention also discloses a P-type PERC double-sided solar energy system, including a P-type PERC solar cell, which is any of the P-type PERC solar cells described above.
  • a P-type PERC solar cell which is any of the P-type PERC solar cells described above.
  • a PERC solar cell As a preferred embodiment of the PERC solar system, a PERC solar cell, a battery pack, a charge and discharge controller inverter, an AC power distribution cabinet, and a solar tracking control system are included.
  • the PERC solar system may be provided with a battery pack, a charge and discharge controller inverter, or a battery pack or a charge and discharge controller inverter, and those skilled in the art may set according to actual needs.
  • a suede is formed on the front surface of the silicon wafer by a wet method of making a fleece, and the silicon wafer is a P-type silicon.
  • the silicon wafer is placed in a thermal diffusion furnace for diffusion, and an N-type emitter is formed above the P-type silicon.
  • the control temperature is in the range of 840 ° C, and the target sheet resistance is 90 ⁇ / ⁇ .
  • An aluminum oxide film is deposited on the back surface of the silicon wafer using a conventional PECVD apparatus.
  • a silicon nitride film is simultaneously deposited on the front and back sides of the silicon wafer, wherein the rate of silane gas ejected downward from the aeration plate in the process chamber is 1600 sccm, and the rate of introduction of ammonia gas is 4500 sccm.
  • the rate of silane gas ejected upward from the aeration plate under the process chamber was 2000 sccm, and the rate of introduction of ammonia gas was 6000 sccm.
  • the process chamber pressure was 1.5 Torr and the temperature was 450 °C.
  • the silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.
  • a suede is formed on the front surface of the silicon wafer by a wet method of making a fleece, and the silicon wafer is a P-type silicon.
  • the silicon wafer is placed in a thermal diffusion furnace for diffusion, and an N-type emitter is formed above the P-type silicon.
  • the diffusion control temperature is controlled within a range of 830 ° C, and the target sheet resistance is 100 ⁇ / ⁇ .
  • An aluminum oxide film is deposited on the back surface of the silicon wafer using a conventional PECVD apparatus.
  • the silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.
  • a suede is formed on the front surface of the silicon wafer by a wet method of making a fleece, and the silicon wafer is a P-type silicon.
  • the silicon wafer is placed in a thermal diffusion furnace for diffusion, and an N-type emitter is formed above the P-type silicon.
  • the diffusion control temperature is controlled within a range of 820 ° C, and the target sheet resistance is 110 ⁇ / ⁇ .
  • An aluminum oxide film is deposited on the back surface of the silicon wafer by a conventional PECVD apparatus.
  • a silicon nitride film is simultaneously deposited on the front and back sides of the silicon wafer, wherein the rate of silane gas ejected downward from the aeration plate in the process chamber is 1580 sccm, and the rate of introduction of ammonia gas is 6200 sccm.
  • the rate of silane gas ejected upward from the aeration plate under the process chamber was 2400 sccm, and the rate of introduction of ammonia gas was 10000 sccm.
  • the process chamber pressure was 2.2 Torr and the temperature was 480 °C.
  • the silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.
  • a suede is formed on the front surface of the silicon wafer by a wet method of making a fleece, and the silicon wafer is a P-type silicon.
  • the silicon wafer is placed in a thermal diffusion furnace for diffusion, and an N-type emitter is formed above the P-type silicon.
  • the diffusion control temperature is controlled within a range of 830 ° C, and the target sheet resistance is 120 ⁇ / ⁇ .
  • An aluminum oxide film is deposited on the back surface of the silicon wafer by a conventional PECVD apparatus.
  • a silicon nitride film is simultaneously deposited on the front and back sides of the silicon wafer, wherein the rate of the silane gas ejected downward from the aeration plate in the process chamber is 1750 sccm, and the rate of introduction of ammonia gas is 8600 sccm.
  • the rate at which the vent gas is ejected upward from the aeration plate under the process chamber is 2500 sccm, and the rate at which ammonia gas is introduced is 11500 sccm.
  • the process chamber pressure was 2.8 Torr and the temperature was 460 °C.
  • the silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.

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Abstract

La présente invention concerne un procédé de préparation d'une cellule solaire à contact arrière et émetteur passivé de type P (PERC) consistant : à former une face suédée sur la surface avant d'une tranche de silicium (S100) ; à diffuser sur la surface avant de la tranche de silicium, afin de former un émetteur de type N (S101) ; à éliminer du verre de phosphosilicate et des jonctions PN périphériques (S102) ; à déposer un film d'alumine sur la surface arrière de la tranche de silicium (S104) ; à déposer des films de nitrure de silicium sur la surface avant et la surface arrière de la tranche de silicium à l'aide d'un dispositif de dépôt double face par dépôt chimique en phase vapeur assisté par plasma (PECVD) (S105) ; à effectuer un rainurage au laser sur la surface arrière de la tranche de silicium (S106) ; à imprimer une suspension épaisse d'électrode de surface arrière sur la surface arrière de la tranche de silicium et à sécher cette dernière (S107) ; à imprimer une suspension épaisse d'aluminium sur la surface arrière de la tranche de silicium et à sécher cette dernière (S108) ; à imprimer une suspension épaisse d'électrode de surface avant sur la surface avant de la tranche de silicium (S109) ; à effectuer un frittage à haute température sur la tranche de silicium, afin de former une électrode de surface arrière, un champ électrique arrière complètement en aluminium, et une électrode de surface avant (S110) ; et à réaliser un recuit anti- amortissement induit par la lumière (LID) sur la tranche de silicium, afin de préparer la cellule solaire PERC de type P (S111). L'invention concerne en outre une cellule solaire PERC de type P, un ensemble de cellules et un système de cellules. Ledit procédé de préparation peut améliorer l'efficacité de production et réduire les rayures de la tranche de silicium.
PCT/CN2017/087355 2017-03-03 2017-06-07 Procédé de préparation de cellule solaire perc de type p, cellule solaire perc de type p, ensemble de cellules et système de cellules Ceased WO2018157492A1 (fr)

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CN201710124821.XA CN107068790A (zh) 2017-03-03 2017-03-03 P型perc太阳能电池的制备方法、电池、组件和系统
CN201710124821.X 2017-03-03

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CN107887453B (zh) * 2017-10-10 2019-03-15 横店集团东磁股份有限公司 一种双面氧化铝p型perc太阳能电池及制作方法
CN107887472A (zh) * 2017-10-10 2018-04-06 横店集团东磁股份有限公司 一种采用in‑site退火的PERC电池的制备方法
CN110364578A (zh) * 2018-04-09 2019-10-22 成都晔凡科技有限公司 制备用于perc叠瓦组件的太阳能电池片的方法和系统
CN109256440A (zh) * 2018-09-17 2019-01-22 浙江爱旭太阳能科技有限公司 一种选择性钝化接触晶体硅太阳能电池及其制备方法
CN109560143A (zh) * 2018-09-28 2019-04-02 上海神舟新能源发展有限公司 印刷Al2O3制备高效PERC电池的制备方法
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CN111146121B (zh) * 2019-12-25 2023-01-24 广东爱旭科技有限公司 一种perc太阳能电池烧结炉及烧结方法
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