WO2018157492A1 - Preparation method for p-type perc solar cell, p-type perc solar cell, cell assembly, and cell system - Google Patents

Abstract

Provided is a preparation method for a P-type passivated emitter and rear contact (PERC) solar cell, comprising the following steps of: forming a suede face on the front surface of a silicon wafer (S100); diffusing on the front surface of the silicon wafer, to form an N-type emitter (S101); removing phosphorosilicate glass and peripheral PN junctions (S102); depositing an alumina film at the back surface of the silicon wafer (S104); depositing silicon nitride films on both the front surface and the back surface of the silicon wafer employing a plasma-enhanced chemical vapor deposition (PECVD) double-sided deposition device (S105); laser grooving on the back surface of the silicon wafer (S106); printing back surface electrode slurry on the back surface of the silicon wafer and drying same (S107); printing aluminum slurry on the back surface of the silicon wafer and drying same (S108); printing front surface electrode slurry on the front surface of the silicon wafer (S109); performing high temperature sintering on the silicon wafer, to form a back surface electrode, a full aluminum back electric field, and a front surface electrode (S110); and performing anti-light-induced damping (LID) annealing on the silicon wafer, to prepare the P-type PERC solar cell (S111). Further provided are a P-type PERC solar cell, a cell assembly, and a cell system. Said preparation method can improve production efficiency and reduce scratching of the silicon wafer.

Description

Method, battery, component and system for preparing P-type PERC solar battery Technical field

The present invention relates to the field of solar cell technology, and in particular to a method for preparing a P-type PERC solar cell. Accordingly, the present invention also relates to a P-type PERC solar cell, assembly and system.

Background technique

A crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using a photovoltaic effect. When the sun shines on the semiconductor PN junction, a new hole-electron pair is formed, and the electric field at the PN junction Under the action, the holes flow from the N zone to the P zone, and the electrons flow from the P zone to the N zone, and a current is formed after the circuit is turned on.

Conventional crystalline silicon solar cells basically adopt only the front passivation technology, and a silicon nitride film is deposited on the front side of the silicon wafer by PECVD to reduce the recombination rate of the minority on the front surface, which can greatly increase the open circuit voltage of the crystalline silicon battery and Short-circuit current, thereby improving the photoelectric conversion efficiency of the crystalline silicon solar cell.

With the increasing requirements for the photoelectric conversion efficiency of crystalline silicon cells, people began to study the back passivation solar cell technology. The back passivation technique is to deposit an aluminum oxide film and a silicon nitride film on the back side of the silicon wafer, and the front side of the silicon wafer is also deposited with a silicon nitride film according to a conventional process. At present, the mainstream practice of PERC batteries is to deposit a silicon nitride film on the front and back sides of the silicon wafer. The function of the back silicon nitride film is to protect the passivation of the aluminum oxide film. The function of the front silicon nitride film has two aspects. On the one hand, the reflection of the frontal sunlight is reduced, and on the other hand, the front side of the silicon wafer is passivated. However, the front silicon nitride film, the back silicon nitride film and the back aluminum oxide film all need to be deposited one by one. Many operations and steps are likely to cause scratching of the silicon wafer, and the fragmentation rate is improved, which is disadvantageous for reducing the defect rate of the product. Therefore, there is a need to provide a new method for preparing a P-type PERC solar cell to alleviate the impact of the above technical problems on the product.

Summary of the invention

The technical problem to be solved by the present invention is to provide a preparation method of a P-type PERC solar cell, which can improve production efficiency, reduce scratching of the silicon wafer, reduce the fragmentation rate, and improve the product qualification rate.

The technical problem to be solved by the present invention is also to provide a P-type PERC solar cell, which can Improve production efficiency, reduce scratching of silicon wafers, reduce fragmentation rate, and improve product qualification rate.

The technical problem to be solved by the present invention is also to provide a P-type PERC solar cell module, which can improve production efficiency, reduce scratching of the silicon wafer, reduce the fragmentation rate, and improve the product qualification rate.

The technical problem to be solved by the present invention is also to provide a P-type PERC solar cell system, which can improve production efficiency, reduce scratching of silicon wafers, reduce fragmentation rate, and improve product qualification rate.

In order to solve the above technical problems, the present invention provides a method for preparing a P-type PERC solar cell, comprising the following steps:

1) forming a pile on the front side of the silicon wafer, the silicon wafer being P-type silicon;

(2) diffusing on the front side of the silicon wafer to form an N-type emitter;

(3) removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process;

(4) depositing an aluminum oxide film on the back side of the silicon wafer;

(5) simultaneously depositing a silicon nitride film on the front and back sides of the silicon wafer by using a PECVD double-sided deposition apparatus;

(6) laser grooving the back side of the silicon wafer;

(7) printing the back electrode paste on the back side of the silicon wafer, and drying;

(8) printing aluminum paste on the back of the silicon wafer and drying;

(9) printing a front electrode paste on the front side of the silicon wafer;

(10) sintering the silicon wafer at a high temperature to form a back electrode, an all-aluminum back electric field, and a front electrode;

(11) The silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.

As a preferred technical solution of the preparation method of the P-type PERC solar cell, the silicon wafer in the step (6) is suspended in the process chamber by the interaction of the upper and lower gases in the process chamber of the PECVD double-sided deposition apparatus. A silicon nitride film is simultaneously deposited on both sides of the silicon wafer.

As a preferred technical solution of the preparation method of the P-type PERC solar cell, the gas injected in the process chamber of the PECVD double-sided deposition apparatus is ammonia gas and silane.

As a preferred technical solution for the preparation method of the P-type PERC solar cell, the rate of silane gas sprayed downward from the aeration plate in the process chamber is 1500-1800 sccm, and the rate of ammonia gas is 4000-10000 sccm; the aeration plate under the process chamber The rate of spraying the silane gas upward is 1800-3000 sccm, and the rate of introducing the ammonia gas is 5000-12000 sccm;

The reaction pressure is 1-3 Torr and the reaction duration is 40-80 s.

As a preferred embodiment of the preparation method of the P-type PERC solar cell, a step of back-polishing the back surface of the silicon wafer is added between the steps (3) and (4).

As a preferred technical solution of the preparation method of the P-type PERC solar cell, in the step (7), after the laser grooving on the back surface, the silicon nitride film on the back surface and the back surface aluminum oxide film are broken, so that the all-aluminum back electric field and P-type silicon forms a local contact.

Accordingly, the present invention also provides a P-type PERC solar cell comprising a back electrode, an all-aluminum back electric field, a back silicon nitride film, a back aluminum oxide film, a P-type silicon, an N-type emitter, and a front silicon nitride film. And a front electrode, the back electrode, the all-aluminum back electric field, the back silicon nitride film, the back aluminum oxide film, the P-type silicon, the N-type emitter, the front silicon nitride film, and the front electrode are sequentially connected from bottom to top, The back silicon nitride film and the back aluminum oxide film are provided with a laser grooving zone, and the all-aluminum back electric field is partially contacted with the P-type silicon by providing a local aluminum back field in the laser grooving zone;

The back silicon nitride film and the front silicon nitride film were deposited by a PECVD double-sided deposition apparatus simultaneously on the front and back sides of the silicon wafer.

As a preferred technical solution of the P-type PERC solar cell, the back silicon nitride film has a thickness of 80-300 nm.

As a preferred embodiment of the P-type PERC solar cell, the back aluminum oxide film has a thickness of 2 to 30 nm.

Accordingly, the present invention also provides a PERC double-sided solar cell module comprising a PERC solar cell and a packaging material, the PERC solar cell being a P-type PERC solar cell of the present invention.

Accordingly, the present invention also provides a PERC solar system comprising a PERC solar cell, which is a P-type PERC solar cell of the present invention.

Embodiments of the present invention have the following beneficial effects:

The invention discloses a preparation method of a P-type PERC solar cell, which is formed by depositing a silicon nitride film on the front and back sides of a silicon wafer by a PECVD double-sided deposition apparatus, and the double-deposited silicon nitride film can avoid multiple deposition steps on the one hand. The production time is saved and the production efficiency is improved. On the other hand, the damage rate of the silicon wafer is increased due to multiple deposition operations. The invention simplifies the deposition process, reduces the scratch of the silicon wafer, reduces the fragmentation rate, and improves the product yield. The P-type PERC solar cell prepared by the preparation method greatly reduces the surface sub-composite on the back surface of the silicon wafer and improves the conversion efficiency of the battery.

DRAWINGS

1 is a process flow diagram of a method for preparing a P-type PERC solar cell of the present invention;

2 is a schematic structural view of a PEVCD double-sided deposition apparatus used in a method for preparing a P-type PERC solar cell according to the present invention;

3 is a schematic view showing the structure of a P-type PERC solar cell of the present invention.

detailed description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings.

As shown in FIG. 1 , the present invention provides a method for preparing a P-type PERC solar cell, comprising the following steps:

S100, forming a pile on the front side of the silicon wafer, the silicon wafer being P-type silicon.

A wet or dry etching technique is used to form a pile on the surface of the silicon wafer by a texturing device.

S101, diffusing on the front side of the silicon wafer to form an N-type emitter.

The diffusion of the step S101 of the preparation method of the present invention is that the silicon wafer is placed in a thermal diffusion furnace for diffusion, and the N-type emitter diffusion is formed above the P-type silicon to control the temperature in the range of 800 ° C to 900 ° C. The sheet resistance is 90-150 ohms/□.

During the diffusion process, a phosphorous silicon glass layer is formed on the front and back sides of the silicon wafer. The formation of the phosphosilicate glass layer is due to the fact that during the diffusion process, POCl ₃ reacts with O ₂ to form P ₂ O ₅ deposited on the surface of the silicon wafer. The reaction of P ₂ O ₅ with Si generates SiO ₂ and phosphorus atoms, so that a layer of SiO ₂ containing phosphorus is formed on the surface of the silicon wafer, which is called a phosphosilicate glass. The phosphosilicate glass layer can collect impurities in the silicon wafer during diffusion, and can further reduce the impurity content of the solar cell.

S102, removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process.

In the invention, the diffused silicon wafer is placed in a volume ratio of 1:5 HF (mass fraction 40%-50%) and HNO ₃ (mass fraction 60%-70%) mixed solution acid bath for 15s to remove phosphorus silicon. Glass and surrounding PN junction. The presence of the phosphosilicate glass layer tends to cause chromatic aberration of PECVD and shedding of Si _x N _y , and the phosphorus-phosphorus glass layer contains a large amount of phosphorus and impurities migrated from the silicon wafer, and thus it is necessary to remove the phosphosilicate glass layer.

S103, performing back polishing on the back surface of the silicon wafer, and determining whether to perform the step S103 according to the situation.

S104, depositing an aluminum oxide film on the back side of the silicon wafer.

An aluminum oxide film is deposited on the back side of the wafer using a conventional PECVD apparatus, an ALD apparatus, or an APCVD apparatus.

S105, using a PECVD double-sided deposition apparatus, simultaneously depositing a silicon nitride film on the front and back sides of the silicon wafer.

In order to overcome the existing PECVD technology, only a single-sided deposition of a silicon nitride film, the present invention uses a new PEVCD double-sided deposition equipment, as shown in Figure 2, the PEVCD double-sided deposition equipment includes a loading zone 1, a heating chamber 2, a process The cavity 3, the cooling zone 4 and the blanking zone 5, wherein the upper aeration plate 6 and the lower aeration plate 7 of the process chamber are provided with dense vent holes, and ammonia gas and silane gas are operated from the upper aeration plate 6 and the lower aeration plate 7 during operation. In the opposite direction, the rate of silane gas sprayed downward from the aeration plate 6 in the process chamber is 1500-1800 sccm, and the rate of introduction of ammonia gas is 4000-6000 sccm; the rate of silane gas ejected upward from the aeration plate 7 in the process chamber is 1800- 3000sccm, the rate of ammonia gas is 5000-8000sccm. By adjusting the jet velocity of the gas, the silicon wafer can be suspended in the process chamber, and at a pressure of 1-3 Torr and a temperature of 400-500 ° C, ammonia gas and silane gas react with the silicon wafer, on the front side of the silicon wafer. The silicon nitride film is simultaneously formed on the reverse side; and the upper aeration plate 6 and the lower aeration plate 7 are arranged in parallel obliquely, and the plane between the two aeration plates and the ground is 1-5°, thereby the side of the silicon wafer under the action of gravity The coating is applied to the side of the process chamber for double-sided deposition.

The double-sided deposition of the silicon nitride film can avoid multiple deposition steps on one hand, save production time and improve production efficiency; on the other hand, the deposition rate of the silicon wafer is increased due to multiple deposition operations, and the present invention simplifies the deposition process. Reduce the scratch of the silicon wafer, reduce the fragmentation rate, and improve the product qualification rate.

S106, laser grooving the back surface of the silicon wafer.

Step S106, after performing laser grooving on the back surface, penetrating the silicon nitride film on the back surface and the back aluminum oxide film to form a laser grooving zone, and the step S108 is to print the aluminum paste on the back side of the silicon wafer, drying, and sintering the all-aluminum back electric field and P-type silicon forms a local contact.

S107, printing the back electrode paste on the back side of the silicon wafer and drying.

S108, printing aluminum paste on the back side of the silicon wafer and drying.

S109, printing a front electrode paste on the front side of the silicon wafer.

S110, the silicon wafer is sintered at a high temperature to form a back electrode, an all-aluminum back electric field, and a front electrode.

S111, the silicon wafer is subjected to anti-LID annealing to obtain a P-type PERC solar cell.

It should be noted that the phenomenon of Light Induced Degradation caused by solar cells and components during illumination is referred to as LID. In recent years, there has been increasing concern about the photo-attenuation of photovoltaic modules. The reason is that the power attenuation caused by photo-induced attenuation far exceeds the range acceptable to customers, which makes component manufacturers face potential compensation risks. At the end of the invention, the anti-LID annealing process is performed, and the electrical properties of the battery are restored.

Accordingly, as shown in FIG. 3, the present invention also provides a P-type PERC solar cell, including The back electrode 9, the all-aluminum back electric field 10, the back silicon nitride film 11, the back aluminum oxide film 12, the P-type silicon 13, the N-type emitter 14, the front silicon nitride film 15, and the front surface electrode 16, the back surface electrode 9 An all-aluminum back electric field 10, a back silicon nitride film 11, a back aluminum oxide film 12, a P-type silicon 13, an N-type emitter 14, a front silicon nitride film 15, and a front surface electrode 16 are sequentially connected from bottom to top, the back surface The silicon nitride film 11 and the back aluminum oxide film 12 are provided with a laser grooving zone 17, and the all-aluminum back electric field 10 is filled with the aluminum paste in the laser grooving zone 17 to form a partial contact with the P-type silicon;

The back silicon nitride film and the front silicon nitride film were deposited by a PECVD double-sided deposition apparatus simultaneously on the front and back sides of the silicon wafer.

Compared with the conventional crystalline silicon solar cell, the P-type PERC solar cell of the present invention has a passivation film on the front and back sides of the silicon wafer, and a groove on the back passivation film, so that the aluminum back field and P-type silicon forms local contact, which greatly reduces surface recombination and improves battery conversion efficiency. The front and back passivation films of the silicon wafer of the present invention are simultaneously deposited by a PECVD double-sided deposition apparatus, which can reduce the scratch of the silicon wafer, reduce the fragmentation rate, and have better stability of the battery performance.

It should be noted that, according to the present invention, since the flow velocity of the gas is different from that of the PECVD double-sided deposition device, the thickness of the front and back surfaces of the silicon wafer is different. Generally, the silicon nitride film on the back surface is relatively thick, and the thickness is 80-300 nm. It is used for passivation and can protect the aluminum oxide film. The front silicon nitride film is thinner and has a thickness of 50-120 nm, and is mainly used as an anti-reflection film.

Correspondingly, the present invention also discloses a P-type PERC solar cell module comprising a P-type PERC solar cell and a packaging material, and the PERC solar cell is any of the P-type PERC solar cells described above. Specifically, as an embodiment of the P-type PERC solar cell module, the high-permeability tempered glass, the ethylene-vinyl acetate copolymer EVA, the PERC solar cell, the ethylene-vinyl acetate copolymer EVA, and the high permeability are connected in this order from top to bottom. Composition of tempered glass.

Correspondingly, the present invention also discloses a P-type PERC double-sided solar energy system, including a P-type PERC solar cell, which is any of the P-type PERC solar cells described above. As a preferred embodiment of the PERC solar system, a PERC solar cell, a battery pack, a charge and discharge controller inverter, an AC power distribution cabinet, and a solar tracking control system are included. The PERC solar system may be provided with a battery pack, a charge and discharge controller inverter, or a battery pack or a charge and discharge controller inverter, and those skilled in the art may set according to actual needs.

It should be noted that in the PERC solar cell module and the PERC solar system, components other than the P-type PERC solar cell may be designed with reference to the prior art.

The following further illustrates by way of specific examples:

Example 1

(1) A suede is formed on the front surface of the silicon wafer by a wet method of making a fleece, and the silicon wafer is a P-type silicon.

(2) The silicon wafer is placed in a thermal diffusion furnace for diffusion, and an N-type emitter is formed above the P-type silicon. When the diffusion is controlled, the control temperature is in the range of 840 ° C, and the target sheet resistance is 90 Ω/□.

(3) The diffused silicon wafer was placed in an acid bath of HF and HNO ₃ mixed solution having a volume ratio of 1:5 for 15 s to remove the phosphosilicate glass and the peripheral PN junction.

(4) An aluminum oxide film is deposited on the back surface of the silicon wafer using a conventional PECVD apparatus.

(5) Using a PECVD double-sided deposition apparatus, a silicon nitride film is simultaneously deposited on the front and back sides of the silicon wafer, wherein the rate of silane gas ejected downward from the aeration plate in the process chamber is 1600 sccm, and the rate of introduction of ammonia gas is 4500 sccm. The rate of silane gas ejected upward from the aeration plate under the process chamber was 2000 sccm, and the rate of introduction of ammonia gas was 6000 sccm. The process chamber pressure was 1.5 Torr and the temperature was 450 °C.

(6) laser grooving the back side of the silicon wafer;

(7) printing the back electrode paste on the back side of the silicon wafer, and drying;

(8) printing aluminum paste on the back of the silicon wafer and drying;

(9) printing a front electrode paste on the front side of the silicon wafer;

(10) sintering the silicon wafer at a high temperature to form a back electrode, an all-aluminum back electric field, and a front electrode;

(11) The silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.

Example 2

(1) A suede is formed on the front surface of the silicon wafer by a wet method of making a fleece, and the silicon wafer is a P-type silicon.

(2) The silicon wafer is placed in a thermal diffusion furnace for diffusion, and an N-type emitter is formed above the P-type silicon. The diffusion control temperature is controlled within a range of 830 ° C, and the target sheet resistance is 100 Ω / □.

(3) The diffused silicon wafer was placed in an acid bath of HF and HNO ₃ mixed solution having a volume ratio of 1:5 for 15 s to remove the phosphosilicate glass and the peripheral PN junction.

(4) An aluminum oxide film is deposited on the back surface of the silicon wafer using a conventional PECVD apparatus.

(5) Using a PECVD double-sided deposition apparatus, a silicon nitride film is simultaneously deposited on the front and back sides of the silicon wafer, wherein the rate of silane gas ejected downward from the aeration plate in the process chamber is 1650 sccm, and the rate of introduction of ammonia gas is 8000 sccm. The rate of silane gas ejected upwards in the process chamber is 2500 sccm, and the rate of ammonia gas is 9000 sccm. The pressure in the process chamber was 2 Torr and the temperature was 450 °C.

(6) laser grooving the back side of the silicon wafer;

(7) printing the back electrode paste on the back side of the silicon wafer, and drying;

(8) printing aluminum paste on the back of the silicon wafer and drying;

(9) printing a front electrode paste on the front side of the silicon wafer;

(10) sintering the silicon wafer at a high temperature to form a back electrode, an all-aluminum back electric field, and a front electrode;

(11) The silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.

Example 3

(1) A suede is formed on the front surface of the silicon wafer by a wet method of making a fleece, and the silicon wafer is a P-type silicon.

(2) The silicon wafer is placed in a thermal diffusion furnace for diffusion, and an N-type emitter is formed above the P-type silicon. The diffusion control temperature is controlled within a range of 820 ° C, and the target sheet resistance is 110 Ω / □.

(3) The diffused silicon wafer was placed in an acid bath of HF and HNO ₃ mixed solution having a volume ratio of 1:5 for 15 s to remove the phosphosilicate glass and the peripheral PN junction.

(4) back polishing the back side of the silicon wafer;

(5) An aluminum oxide film is deposited on the back surface of the silicon wafer by a conventional PECVD apparatus.

(6) Using a PECVD double-sided deposition apparatus, a silicon nitride film is simultaneously deposited on the front and back sides of the silicon wafer, wherein the rate of silane gas ejected downward from the aeration plate in the process chamber is 1580 sccm, and the rate of introduction of ammonia gas is 6200 sccm. The rate of silane gas ejected upward from the aeration plate under the process chamber was 2400 sccm, and the rate of introduction of ammonia gas was 10000 sccm. The process chamber pressure was 2.2 Torr and the temperature was 480 °C.

(7) laser grooving the back side of the silicon wafer;

(8) printing the back electrode paste on the back side of the silicon wafer, and drying;

(9) printing aluminum paste on the back of the silicon wafer and drying;

(10) printing a front electrode paste on the front side of the silicon wafer;

(11) sintering the silicon wafer at a high temperature to form a back electrode, an all-aluminum back electric field, and a front electrode;

(12) The silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.

Example 4

(1) A suede is formed on the front surface of the silicon wafer by a wet method of making a fleece, and the silicon wafer is a P-type silicon.

(2) The silicon wafer is placed in a thermal diffusion furnace for diffusion, and an N-type emitter is formed above the P-type silicon. The diffusion control temperature is controlled within a range of 830 ° C, and the target sheet resistance is 120 Ω / □.

(3) The diffused silicon wafer was placed in an acid bath of HF and HNO ₃ mixed solution having a volume ratio of 1:5 for 15 s to remove the phosphosilicate glass and the peripheral PN junction.

(4) back polishing the back side of the silicon wafer;

(5) An aluminum oxide film is deposited on the back surface of the silicon wafer by a conventional PECVD apparatus.

(6) Using a PECVD double-sided deposition apparatus, a silicon nitride film is simultaneously deposited on the front and back sides of the silicon wafer, wherein the rate of the silane gas ejected downward from the aeration plate in the process chamber is 1750 sccm, and the rate of introduction of ammonia gas is 8600 sccm. The rate at which the vent gas is ejected upward from the aeration plate under the process chamber is 2500 sccm, and the rate at which ammonia gas is introduced is 11500 sccm. The process chamber pressure was 2.8 Torr and the temperature was 460 °C.

(7) laser grooving the back side of the silicon wafer;

(8) printing the back electrode paste on the back side of the silicon wafer, and drying;

(9) printing aluminum paste on the back of the silicon wafer and drying;

(10) printing a front electrode paste on the front side of the silicon wafer;

(11) sintering the silicon wafer at a high temperature to form a back electrode, an all-aluminum back electric field, and a front electrode;

(12) The silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell.

It should be noted that the above embodiments are only intended to illustrate the technical solutions of the present invention and are not intended to limit the scope of the present invention, although the present invention will be described in detail with reference to the preferred embodiments, The technical solutions of the present invention may be modified or equivalently substituted without departing from the spirit and scope of the technical solutions of the present invention.

Claims (10)

A method for preparing a P-type PERC solar cell, comprising the steps of: (1) forming a pile on the front side of the silicon wafer, the silicon wafer being P-type silicon; (2) diffusing on the front side of the silicon wafer to form an N-type emitter; (3) removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process; (4) depositing an aluminum oxide film on the back side of the silicon wafer; (5) simultaneously depositing a silicon nitride film on the front and back sides of the silicon wafer by using a PECVD double-sided deposition apparatus; (6) laser grooving the back side of the silicon wafer; (7) printing the back electrode paste on the back side of the silicon wafer, and drying; (8) printing aluminum paste on the back of the silicon wafer and drying; (9) printing a front electrode paste on the front side of the silicon wafer; (10) sintering the silicon wafer at a high temperature to form a back electrode, an all-aluminum back electric field, and a front electrode; (11) The silicon wafer was subjected to anti-LID annealing to obtain a P-type PERC solar cell. The method for preparing a P-type PERC solar cell according to claim 1, wherein in the step (6), the silicon wafer is suspended by the process of the upper and lower gases in the process chamber of the PECVD double-sided deposition apparatus. The cavity is simultaneously deposited with a silicon nitride film on both sides of the silicon wafer. The method for preparing a P-type PERC solar cell according to claim 2, wherein the gas injected in the process chamber of the PECVD double-sided deposition apparatus is ammonia gas and silane; and the rate of silane gas sprayed downward from the aeration plate on the process chamber 1500-1800sccm, the rate of ammonia gas is 4000-10000sccm; the rate of silane gas sprayed upward from the aeration plate in the process chamber is 1800-3000sccm, and the rate of ammonia gas is 5000-12000sccm; The reaction pressure is 1-3 Torr and the reaction duration is 40-80 s. A method of preparing a P-type PERC solar cell according to claim 1, wherein a step of back-polishing the back surface of the silicon wafer is added between the steps (3) and (4). A method of preparing a P-type PERC solar cell according to claim 1, wherein In the step (7), after the laser grooving is performed on the back surface, the silicon nitride film on the back surface and the back surface aluminum oxide film are broken, so that the all-aluminum back electric field is in partial contact with the P-type silicon. A P-type PERC solar cell prepared by the preparation method according to claim 1, comprising a back electrode, an all-aluminum back electric field, a back silicon nitride film, a back aluminum oxide film, a P-type silicon, and an N-type emission a front, front silicon nitride film and a front electrode, the back electrode, an all-aluminum back electric field, a back silicon nitride film, a back aluminum oxide film, a P-type silicon, an N-type emitter, a front silicon nitride film, and a front electrode Connected in order from bottom to top, the back silicon nitride film and the back aluminum oxide film are provided with a laser grooved region, and the all-aluminum back electric field is formed in a local contact with the P-type silicon by providing a local aluminum back field in the laser grooved region; The back silicon nitride film and the front silicon nitride film were deposited by a PECVD double-sided deposition apparatus simultaneously on the front and back sides of the silicon wafer. The P-type PERC solar cell according to claim 6, wherein the back silicon nitride film has a thickness of 80-300 nm; The front silicon nitride film has a thickness of 50 to 120 nm and a refractive index of 1.8 to 2.3. A P-type PERC solar cell according to claim 6, wherein said back aluminum oxide film has a thickness of 2 to 30 nm. A PERC solar cell module comprising a PERC solar cell and a packaging material, wherein the PERC solar cell is the P-type PERC solar cell of any one of claims 6-8. A PERC solar cell system comprising a PERC solar cell, characterized in that the PERC solar cell is a P-type PERC solar cell according to any one of claims 6-8.

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