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WO2018141621A3 - Leistungsmodul - Google Patents

Leistungsmodul Download PDF

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Publication number
WO2018141621A3
WO2018141621A3 PCT/EP2018/051816 EP2018051816W WO2018141621A3 WO 2018141621 A3 WO2018141621 A3 WO 2018141621A3 EP 2018051816 W EP2018051816 W EP 2018051816W WO 2018141621 A3 WO2018141621 A3 WO 2018141621A3
Authority
WO
WIPO (PCT)
Prior art keywords
contact piece
power module
electric component
frame
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/051816
Other languages
English (en)
French (fr)
Other versions
WO2018141621A2 (de
Inventor
Michael Kaspar
Kai Kriegel
Stefan Stegmeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2018141621A2 publication Critical patent/WO2018141621A2/de
Publication of WO2018141621A3 publication Critical patent/WO2018141621A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Abstract

Das Leistungsmodul weist mindestens ein elektrisches Bauteil (10, 90) mit einer Kontaktfläche (50, 95) auf, wobei das elektrische Bauteil (10, 90) mittels der Kontaktfläche (50, 95) an mindestens ein mit offenporigem Material gebildetes Kontaktstück (100) des Leistungsmoduls elektrisch kontaktiert ist und das zumindest eine elektrische Bauteil (10, 90) und das zumindest eine Kontaktstück (100), zumindest in Richtungen der flächigen Erstreckungen der mindestens einen Kontaktfläche (50, 95), relativ zueinander zumindest formschlüssig festgelegt sind, insbesondere mittels eines Rahmens des Leistungsmoduls (70, 300), der vorzugsweise in Richtung der flächigen Erstreckungen der Kontaktfläche (50, 95) durchführende Durchbrechungen aufweist. Der Rahmen (70) kann Vorsprünge (80) aufweisen, die sich zumindest quer, vorzugsweise senkrecht, zur Kontaktfläche (50, 95) des zumindest einen elektrischen Bauteils (10, 90) erstrecken und insbesondere ein Führungsmittel bilden, mittels welchem das elektrische Bauteil (10, 90) und/oder das Kontaktstück (100) in diejenige relative Stellung zueinander führbar ist oder sind, in welcher das Kontaktstück (100) und das elektrische Bauteil (10, 90) relativ zueinander festgelegt sind. Alternativ kann der Rahmen (300) mittels Rahmenplättchen gebildet sein, die nach Eingießen aus einem Wafer vereinzelten Leistungsbauteile (90) in einen Moldwafer (302) daraus gemeinsam mit den Leistungsbauteilen (90) als überstehender Rahmen, welcher das Rahmenplättchen (300) bildet, ausgeschnitten werden. Diese Rahmenplättchen (300) sind mit ihren Randbereichen in Seitenwände (305) eines Gehäuses des erfindungsgemäßen Leistungsmoduls eingelassen, beispielsweise eingegossen. Zweckmäßigerweise ist bei dem erfindungsgemäßen Leistungsmodul das erfindungsgemäß vorgesehene offenporige Material des zumindest einen Kontaktstücks (100) zur Leitung von Kühlfluid, insbesondere Kühlflüssigkeit, durch seine Poren besonders geeignet. Insbesondere weist das Material des zumindest einen Kontaktstücks (100) eine offenzellige Struktur auf. Auf diese Weise kann durch das Kontaktstück (100) insbesondere ein Kühlfluid oder eine Kühlflüssigkeit hindurch geleitet werden und somit das zumindest eine Leistungsbauteil effizient entwärmt werden.
PCT/EP2018/051816 2017-02-06 2018-01-25 Leistungsmodul Ceased WO2018141621A2 (de)

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DE102019204847A1 (de) * 2019-04-04 2020-10-08 Siemens Aktiengesellschaft Vorrichtung zum Entwärmen elektrischer und/oder elektronischer Bauteile
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DE102020134563A1 (de) 2020-12-22 2022-06-23 Danfoss Silicon Power Gmbh Leistungsmodul und Verfahren zur Herstellung eines Leistungsmoduls
DE102021209482A1 (de) * 2021-08-30 2023-03-02 Robert Bosch Gesellschaft mit beschränkter Haftung Elektronisches Modul mit wenigstens einem Leistungshalbleiter und Verfahren zu dessen Herstellung

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1104515A (en) * 1964-08-08 1968-02-28 Siemens Ag Semiconductor devices
DE2203032A1 (de) * 1972-01-22 1973-08-02 Siemens Ag Halbleiteranordnung
DE3113850A1 (de) * 1980-04-07 1982-01-14 Hitachi, Ltd., Tokyo Halbleiteranordnung
DE3145648A1 (de) * 1980-11-19 1982-06-03 Hitachi, Ltd., Tokyo Halbleiteranordnung
JPH07211731A (ja) * 1994-01-27 1995-08-11 Fuji Electric Co Ltd 半導体装置
JP2006128262A (ja) * 2004-10-27 2006-05-18 Kyocera Corp 電子部品搭載用基板、電子装置および電子部品搭載用基板の製造方法
US20090047754A1 (en) * 2007-08-17 2009-02-19 Chipmos Technologies (Bermuda) Ltd. Packaging method involving rearrangement of dice
EP2093792A1 (de) * 2007-11-01 2009-08-26 Hitachi Ltd. Verfahren zur Herstellung eines Leistungshalbleitermoduls, dessen Vorrichtung, Leistungshalbleitermodul und dessen Verbindungsverfahren
WO2010086282A1 (de) * 2009-01-30 2010-08-05 Robert Bosch Gmbh Verbundbauteil sowie verfahren zum herstellen eines verbundbauteils
US20110024896A1 (en) * 2008-07-07 2011-02-03 Mitsubishi Electric Corporation Power semiconductor device
US20130328200A1 (en) * 2012-06-12 2013-12-12 Electronics And Telecommunications Research Institute Direct bonded copper substrate and power semiconductor module
US20140183724A1 (en) * 2012-12-28 2014-07-03 SK Hynix Inc. Substrate for semiconductor package, semiconductor package using the same, and manufacturing method thereof
DE102014113694A1 (de) * 2013-09-24 2015-03-26 Infineon Technologies Ag Substrat, chipanordnung und verfahren zur herstellung davon
DE102013219733A1 (de) * 2013-09-30 2015-04-02 Siemens Aktiengesellschaft Verfahren zur Kantenbeschichtung eines monolithisch integrierten Halbleiterbauelementes
DE102014105957B3 (de) * 2014-04-29 2015-06-25 Infineon Technologies Ag Verfahren zur Herstellung einer Lötverbindung
US20160351468A1 (en) * 2015-05-28 2016-12-01 Ut-Battelle, Llc Integrated packaging of multiple double sided cooling planar bond power modules
WO2016193038A1 (de) * 2015-06-01 2016-12-08 Siemens Aktiengesellschaft Verfahren zur elektrischen kontaktierung eines bauteils mittels galvanischer anbindung eines offenporigen kontaktstücks und entsprechendes bauteilmodul
WO2017021394A1 (de) * 2015-08-05 2017-02-09 Siemens Aktiengesellschaft Bauteilmodul und leistungsmodul
WO2018055148A1 (de) * 2016-09-26 2018-03-29 Siemens Aktiengesellschaft Leistungsmodul

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1236982A (zh) 1998-01-22 1999-12-01 株式会社日立制作所 压力接触型半导体器件及其转换器
US20050111188A1 (en) 2003-11-26 2005-05-26 Anandaroop Bhattacharya Thermal management device for an integrated circuit
DE102006055340A1 (de) 2006-11-23 2008-05-29 Siemens Ag Explosionsfester Modulaufbau für Leistungsbauelemente, insbesondere Leistungshalbleiterbauelemente und dessen Herstellung
US9373559B2 (en) 2014-03-05 2016-06-21 International Business Machines Corporation Low-stress dual underfill packaging

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1104515A (en) * 1964-08-08 1968-02-28 Siemens Ag Semiconductor devices
DE2203032A1 (de) * 1972-01-22 1973-08-02 Siemens Ag Halbleiteranordnung
DE3113850A1 (de) * 1980-04-07 1982-01-14 Hitachi, Ltd., Tokyo Halbleiteranordnung
DE3145648A1 (de) * 1980-11-19 1982-06-03 Hitachi, Ltd., Tokyo Halbleiteranordnung
JPH07211731A (ja) * 1994-01-27 1995-08-11 Fuji Electric Co Ltd 半導体装置
JP2006128262A (ja) * 2004-10-27 2006-05-18 Kyocera Corp 電子部品搭載用基板、電子装置および電子部品搭載用基板の製造方法
US20090047754A1 (en) * 2007-08-17 2009-02-19 Chipmos Technologies (Bermuda) Ltd. Packaging method involving rearrangement of dice
EP2093792A1 (de) * 2007-11-01 2009-08-26 Hitachi Ltd. Verfahren zur Herstellung eines Leistungshalbleitermoduls, dessen Vorrichtung, Leistungshalbleitermodul und dessen Verbindungsverfahren
US20110024896A1 (en) * 2008-07-07 2011-02-03 Mitsubishi Electric Corporation Power semiconductor device
WO2010086282A1 (de) * 2009-01-30 2010-08-05 Robert Bosch Gmbh Verbundbauteil sowie verfahren zum herstellen eines verbundbauteils
US20130328200A1 (en) * 2012-06-12 2013-12-12 Electronics And Telecommunications Research Institute Direct bonded copper substrate and power semiconductor module
US20140183724A1 (en) * 2012-12-28 2014-07-03 SK Hynix Inc. Substrate for semiconductor package, semiconductor package using the same, and manufacturing method thereof
DE102014113694A1 (de) * 2013-09-24 2015-03-26 Infineon Technologies Ag Substrat, chipanordnung und verfahren zur herstellung davon
DE102013219733A1 (de) * 2013-09-30 2015-04-02 Siemens Aktiengesellschaft Verfahren zur Kantenbeschichtung eines monolithisch integrierten Halbleiterbauelementes
DE102014105957B3 (de) * 2014-04-29 2015-06-25 Infineon Technologies Ag Verfahren zur Herstellung einer Lötverbindung
US20160351468A1 (en) * 2015-05-28 2016-12-01 Ut-Battelle, Llc Integrated packaging of multiple double sided cooling planar bond power modules
WO2016193038A1 (de) * 2015-06-01 2016-12-08 Siemens Aktiengesellschaft Verfahren zur elektrischen kontaktierung eines bauteils mittels galvanischer anbindung eines offenporigen kontaktstücks und entsprechendes bauteilmodul
WO2017021394A1 (de) * 2015-08-05 2017-02-09 Siemens Aktiengesellschaft Bauteilmodul und leistungsmodul
WO2018055148A1 (de) * 2016-09-26 2018-03-29 Siemens Aktiengesellschaft Leistungsmodul

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