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WO2017200219A1 - Microphone mems piézoélectrique et procédé de fabrication de celui-ci - Google Patents

Microphone mems piézoélectrique et procédé de fabrication de celui-ci Download PDF

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Publication number
WO2017200219A1
WO2017200219A1 PCT/KR2017/004346 KR2017004346W WO2017200219A1 WO 2017200219 A1 WO2017200219 A1 WO 2017200219A1 KR 2017004346 W KR2017004346 W KR 2017004346W WO 2017200219 A1 WO2017200219 A1 WO 2017200219A1
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WO
WIPO (PCT)
Prior art keywords
film
diaphragm
piezoelectric element
center
lower electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/004346
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English (en)
Korean (ko)
Inventor
이제형
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sost Co ltd
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Sost Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sost Co ltd filed Critical Sost Co ltd
Publication of WO2017200219A1 publication Critical patent/WO2017200219A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • H04R1/2807—Enclosures comprising vibrating or resonating arrangements
    • H04R1/2815—Enclosures comprising vibrating or resonating arrangements of the bass reflex type
    • H04R1/2823—Vents, i.e. ports, e.g. shape thereof or tuning thereof with damping material
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2307/00—Details of diaphragms or cones for electromechanical transducers, their suspension or their manufacture covered by H04R7/00 or H04R31/003, not provided for in any of its subgroups
    • H04R2307/023—Diaphragms comprising ceramic-like materials, e.g. pure ceramic, glass, boride, nitride, carbide, mica and carbon materials

Definitions

  • the present invention relates to a MEMS microphone and a method of manufacturing the same, and more particularly, to a piezo MEMS microphone and a method of manufacturing the same having improved signal-to-noise ratio (SNR).
  • SNR signal-to-noise ratio
  • the microphone is a device that converts an acoustic signal into an electrical signal, and is used in a sound device, a communication device, or a medical device.
  • various devices incorporating microphones are miniaturized, microminiaturization of microphones is required.
  • MEMS microphones are being actively developed.
  • MEMS microphones are very popular in terms of performance and production efficiency because they can be miniaturized and the separate production process between parts can be combined.
  • MEMS microphone is manufactured by applying semiconductor processing technology using surface mount technology (SMT) and electromechanical system (MEMS) technology.
  • SMT surface mount technology
  • MEMS electromechanical system
  • SMT' surface mounting technology
  • 'SMT' refers to a technology for contacting a substrate and a lead of an electronic component included in MEMS microphones.
  • Korean Patent No. 10-1496192 discloses a MEMS microphone provided with a piezo diaphragm
  • FIG. 1 illustrates a structure of a MEMS microphone provided with a conventional piezo diaphragm.
  • a conventional patent includes a lid coupled to a substrate to form an inner space; A transducer coupled to an upper portion of the substrate and disposed in the inner space and converting external sound introduced through the acoustic through hole into an electrical signal; And a semiconductor chip coupled to an upper portion of the substrate and electrically connected to the transducer, the semiconductor chip amplifying the electrical signal to convert the converted electrical signal into an analog or digital electrical signal, the vibration plate being disposed inside the transducer.
  • the piezo piezoelectric element
  • the piezoelectric diaphragm is characterized in that the vent hole is formed.
  • the conventional patent relates to a MEMS microphone element for forming a vent hole in a piezoelectric element, and by forming the diaphragm itself as a piezoelectric element, the conversion efficiency of converting vibration generated by sound pressure into an electrical signal is reduced, There was a problem that the signal-to-noise ratio (SNR) falls by placing the vent hole.
  • SNR signal-to-noise ratio
  • Piezo MEMS microphone and its manufacturing method according to the present invention has the following problems.
  • the present invention is to provide a piezo MEMS microphone and a method of manufacturing the piezoelectric element that can improve the signal-to-noise ratio (SNR) by placing a piezoelectric element around the outer periphery of the diaphragm, unlike the prior art.
  • SNR signal-to-noise ratio
  • the present invention is to provide a method for manufacturing a piezo MEMS microphone, which is easy to manufacture and can lower the unit cost, and has improved signal-to-noise ratio (SNR) and performance.
  • SNR signal-to-noise ratio
  • the first feature of the present invention to solve the above problems is a piezo memes microphone, the substrate having an acoustic chamber formed in the lower center; A vibration plate formed at an upper portion and having at least one vent hole formed at a central portion thereof; A ring-shaped lower electrode formed around an edge of the diaphragm; A ring-shaped piezoelectric element formed on the lower electrode; And an upper electrode formed on the piezoelectric element.
  • the vent hole is formed to be open in the upper direction, symmetrically arranged in the center.
  • the diaphragm may be at least one of a nitride film, an oxide film, and a polysilicon film including silicon (Si), and the piezoelectric element and the lower electrode have a ring shape having the same center, and the piezoelectric element. It is preferable that the ring-shaped diameter of is equal to or larger than the ring-shaped diameter of the lower electrode, and the acoustic chamber is preferably a structure in which the diameter becomes wider toward the lower side.
  • the second aspect of the present invention provides a method of manufacturing a piezomes microphone, comprising: (a) stacking an insulating film, a diaphragm, a lower electrode film, a piezoelectric element film, and an upper electrode film on a substrate in order; (b) removing circular films each having a predetermined diameter in order from the same center of the upper electrode film, the piezoelectric element film, and the lower electrode film; (c) forming at least one vent hole in the center of the diaphragm corresponding to the position where the circular membrane is removed; And (d) forming a sound chamber by etching a portion from the lower surface of the center of the substrate to the insulating layer so that the vent hole is included.
  • the step (b) may include removing and opening a circular film having a first diameter at a center of the upper electrode film; Removing and opening the same central circular film having a second diameter smaller than the first diameter in the piezoelectric element film; And removing and opening the same central circular film having a third diameter smaller than the second diameter in the lower electrode film.
  • the diaphragm may be formed of at least one of a nitride film including silicon (Si), an oxide film, and a polysilicon (Poly Si) film, and in the step (d), the diaphragm may be formed by removing the diaphragm.
  • the vent hole is formed at at least one symmetrical center.
  • Piezo MEMS microphone according to the present invention and its manufacturing method has the following effects.
  • the present invention forms a piezoelectric element or piezo element in a ring shape around the diaphragm, and forms a plurality of vent holes in the center of the diaphragm, thereby reducing the noise signal and improving the signal-to-noise ratio (SNR). And a method for producing the same.
  • the present invention is to place the piezoelectric element on the outer edge of the diaphragm to make the diaphragm to vibrate elastically, and to receive the most tensile force or stress on the outer edge of the edge to increase the sensitivity of the piezoelectric element converting vibration or pressure into an electrical signal. It provides a piezo MEMS microphone and a method of manufacturing the same.
  • the present invention by forming a plurality of vent holes in the center portion of the diaphragm, through the air between the acoustic chamber and the outside of the lower space and to increase the flexibility of the vibration to increase the sensitivity of the conversion of the electrical signal due to vibration MEMS microphone and its manufacturing method are provided.
  • FIG. 1 is a view showing the structure of a MEMS microphone equipped with a conventional piezoelectric diaphragm.
  • FIG. 2 is a plan view and a front view showing the structure of a piezo MEMS microphone according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a sound pressure structure of a piezoelectric element applied to a piezomes microphone according to an embodiment of the present invention.
  • Figure 4 is a schematic diagram showing the process of the piezo Memes microphone manufacturing method as another embodiment of the present invention.
  • the present invention is a piezo MEMS microphone, a substrate formed with an acoustic chamber in the lower center; A vibration plate formed at an upper portion and having at least one vent hole formed at a central portion thereof; A ring-shaped lower electrode formed around an edge of the diaphragm; A ring-shaped piezoelectric element formed on the lower electrode; And an upper electrode formed on the piezoelectric element.
  • FIG. 2 is a plan view and a front view showing the structure of a piezo MEMS microphone according to an embodiment of the present invention.
  • the piezomes microphone includes a substrate 100 having an acoustic chamber formed at a lower center thereof; A diaphragm 120 formed at an upper portion thereof and having at least one vent hole 125 formed at a central portion thereof; A ring-shaped lower electrode 130 formed around an edge of the diaphragm 120; A ring-shaped piezoelectric element 140 formed on the lower electrode 130; And an upper electrode 150 formed on the piezoelectric element 140.
  • the piezoelectric element 140 or the piezoelectric element is formed in a ring shape around the diaphragm 120, and the diaphragm 120
  • the noise signal generated by the force applied to the center of the piezoelectric element 140 is reduced, and the performance is performed by the vent holes 125 formed in the piezoelectric element 140. This reduction can be prevented to improve the signal-to-noise ratio (SNR) performance of MEMS microphones.
  • SNR signal-to-noise ratio
  • the insulating film 110 is formed on the substrate 100 on which the acoustic chamber is formed at the bottom of the center, and the vent hole 125 is formed at the center of the insulating film 110. It illustrates a structure in which the diaphragm 120 is formed stacked. After forming a ring-shaped lower electrode 130 surrounding the periphery of the diaphragm 120, stacking the ring-shaped piezoelectric element 140 on the lower electrode 130 again, the ring on the piezoelectric element 140 A structure in which the upper electrode 150 is formed is illustrated.
  • the substrate 100 is preferably a silicon substrate 100
  • the lower electrode 130 and the upper electrode 150 is excellent in electrical conductivity, such as Mo, Al, Ti, Au, Cu, Pt and TiN or It is preferable to use a high material, and it is preferable to have thickness about tens of nm to several micrometers.
  • the acoustic chamber formed under the substrate 100 is a space in which air for sound vibrations communicates, may be a cylindrical shape, or may be a space having various hollow shapes, such as an elliptical column or a polygonal column, and has a diameter downward. It is preferable to widen this. This is because there is a structural advantage to more widely receive the sound coming in the downward direction of the substrate 100.
  • the lower electrode 130, the upper electrode 150, and the piezoelectric element 140 are preferably in the shape of a ring. This is because the propagation direction of the sound waves is symmetrical in the sound source to increase the sensing sensitivity and the external circuit of the substrate 100. This is because there is an advantage that can be easily connected to and electrically.
  • the piezoelectric element 140 stacked on the lower electrode 130 in a ring shape the piezoelectric element 140 is disposed on the outer edge of the diaphragm 120, thereby vibrating the diaphragm 120 more flexibly. Since the outer edge of the piezoelectric element is subjected to the most tensile force or stress, it is possible to increase the sensitivity of the piezoelectric element 140 for converting vibration or pressure into an electrical signal.
  • the diaphragm 120 is a driving device that detects and drives a sound source (sound pressure), and the diaphragm 120 is driven by the sound source.
  • the diaphragm 120 is preferably formed to have a thickness of several hundreds of micrometers to several micrometers, and the material is preferably at least one of a nitride film including silicon (Si), an oxide film, and a polysilicon film. This is because it is easy to manufacture, the flexibility and elasticity is higher than the generally used diaphragm 120 of the metal material to increase the sensitivity of the microphone, as well as excellent durability.
  • vent hole 125 in the center of the diaphragm 120 as a through hole.
  • piezoelectric or piezoelectric MEMS microphones do not require the vent hole 125 because there is no sacrificial layer. However, when there is no vent hole 125, the back volume is not formed. There was a problem falling.
  • a plurality of vent holes 125 in the central portion of the diaphragm 120 By forming the through, the air chamber and the outside air through the lower space and the vibration flexibility can be increased to increase the conversion sensitivity of the electrical signal due to vibration.
  • vent hole 125 when the vent hole 125 is not present, since the flow of sound is hardly generated, the sensitivity is lowered at the low range (20 to 50 Hz), and thus the diaphragm is opened upward to improve the low frequency characteristics. It is preferable to form at least one vent hole 125 in the central portion of the 120.
  • vent hole 125 formed in the diaphragm 120 is applied in the embodiment of the present invention is preferably disposed in a symmetrical position from the center. This is to increase the sensitivity by uniformly vibrating against the sound pressure and to reduce the noise generated by the uneven air flow.
  • the structure of the vent hole 125 may be a structure of the upper and lower narrow is formed in the upper portion is wide, the lower portion is narrow, the upper portion may have a narrow upper and lower light structure is formed narrowly, the upper portion of course, the inlet and outlet portion It is also possible to have a structure wider than the body to smooth air flow (not shown).
  • an oxide film or a nitride film as the insulating film 110 between the diaphragm 120 and the substrate 100. This is to block the insulation of the silicon substrate 100 and the leakage current of the diaphragm 120.
  • the oxide film may be made of SiO x
  • the nitride film may be made of SiN x
  • the oxide film may be formed on the substrate 100, and the nitride film may be formed again.
  • FIG. 3 is a schematic diagram of a sound pressure structure of the piezoelectric element 140 applied to the piezomes microphone according to the embodiment of the present invention.
  • the piezomes microphone according to the exemplary embodiment of the present invention exemplifies a structure in which the piezomes memes microphone is in surface contact with the diaphragm 120 in a ring shape around the edge of the diaphragm.
  • the diaphragm 120 receives the most stress or tensile force when vibrating up and down by sound pressure. This is the edge and the least stressed or tensioned portion is the central portion. Therefore, in the disk-shaped piezoelectric element 140, the voltage due to vibration is the smallest in the center and this part acts as a noise component, so there is a problem that the overall signal-to-noise ratio (SNR) performance is lowered.
  • SNR signal-to-noise ratio
  • the disk-shaped diaphragm 120 made of silicon or polysilicon having high elasticity and durability is formed on the acoustic chamber, and receives the most stress and tensile force.
  • a ring-shaped piezoelectric element 140 around the edge of the diaphragm 120, it is possible to obtain an effect of improving the overall signal-to-noise ratio (SNR) by taking only a high voltage signal.
  • the vibration elasticity and durability are increased while reducing noise to increase the sensitivity of the signal. It is possible to provide a piezo MEMS microphone structure with excellent performance.
  • Figure 4 is a schematic diagram showing the process of the piezo Memes microphone manufacturing method as another embodiment of the present invention.
  • the method for manufacturing a piezomes microphone according to an exemplary embodiment of the present invention includes: (a) an insulating film 110, a diaphragm 120, a lower electrode 130 film, and a piezoelectric element on the substrate 100.
  • the insulating film 110, the diaphragm 120, the lower electrode 130 film, the piezoelectric element 140 film, and the upper electrode 150 film are sequentially stacked on the silicon substrate 100.
  • the lower electrode 130 film and the upper electrode 150 film are preferably formed by sputtering, LPCVD, or PECVD, and are preferably deposited at a thickness of several hundred micrometers to several micrometers.
  • the lamination of the diaphragm 120 made of silicon (Si) or polysilicon (Poly Si) may be easily performed by LPCVD or PECVD.
  • step (b) each step of removing the circular film having a predetermined diameter in the same center of the upper electrode 150 film, the piezoelectric element 140 film, and the lower electrode 130 film in order, respectively,
  • a circular film each having a predetermined diameter is removed by a method of patterning or etching.
  • a circular film having a first diameter at the center of the upper electrode 150 film is removed by etching or the like, and a second diameter smaller than the first diameter is opened in the piezoelectric element 140 film.
  • the upper portion of the vent hole 125 may be opened by removing and opening a circular film having the same center, and opening and removing the circular film having the same diameter having a third diameter smaller than the second diameter from the lower electrode 130 film. Can be.
  • each circular film to be removed is preferably enlarged in an upward direction, to smooth the flow of external air, to form vibration by sound pressure, and to improve the performance of the microphone converting into an electrical signal by vibration. to be.
  • the vent hole 125 formed in the diaphragm 120 forms a plurality of through-holes symmetrically with respect to the center point through the etching, to form a structure for opening the vent hole 125,
  • step (d) a portion of the lower surface of the substrate 100 is etched to form an acoustic chamber.
  • the piezoelectric element and the lower electrode formed through the above-described manufacturing method have a ring shape having the same center, and the ring shape diameter of the piezoelectric element is preferably equal to or larger than the ring shape diameter of the lower electrode.
  • a ring-shaped piezoelectric element 140 is formed around the edge of the diaphragm 120, between the upper portion of the diaphragm 120 and the acoustic chamber of the lower diaphragm 120
  • SNR signal-to-noise ratio

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Multimedia (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne un microphone MEMS piézoélectrique et un procédé de fabrication de celui-ci, le microphone comprenant : un substrat comportant une chambre acoustique formée dans une partie inférieure centrale de celui-ci ; une membrane formée au niveau d'une partie supérieure et comportant au moins un évent dans une partie centrale de celle-ci ; une électrode inférieure en forme de bague formée sur la circonférence la plus à l'extérieur de la membrane ; un élément piézoélectrique en forme de bague formé au niveau d'une partie supérieure de l'électrode inférieure ; et une électrode supérieure formée au niveau d'une partie supérieure de l'élément piézoélectrique. La présente invention concerne : le microphone MEMS piézoélectrique, qui, contrairement à une technique classique, améliore un rapport signal sur bruit (SNR) en agençant l'élément piézoélectrique sur la circonférence extérieure de la membrane, est facile à fabriquer, peut réduire le coût unitaire, et a un SNR et une performance améliorés ; et le procédé de fabrication de celui-ci.
PCT/KR2017/004346 2016-05-20 2017-04-25 Microphone mems piézoélectrique et procédé de fabrication de celui-ci Ceased WO2017200219A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0062134 2016-05-20
KR1020160062134A KR101758017B1 (ko) 2016-05-20 2016-05-20 피에조 멤스 마이크로폰 및 그 제조방법

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11350219B2 (en) 2019-08-13 2022-05-31 Skyworks Solutions, Inc. Piezoelectric MEMS microphone
US11553280B2 (en) 2019-06-05 2023-01-10 Skyworks Global Pte. Ltd. Piezoelectric MEMS diaphragm microphone
US12329033B2 (en) 2021-10-21 2025-06-10 Skyworks Solutions, Inc. Piezoelectric sensor with increased sensitivity and devices having the same
US12335687B2 (en) 2021-09-20 2025-06-17 Skyworks Solutions, Inc. Piezoelectric MEMS microphone with cantilevered separation
US12391546B1 (en) 2021-01-07 2025-08-19 Skyworks Global Pte. Ltd. Method of making acoustic devices with directional reinforcement

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* Cited by examiner, † Cited by third party
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KR102143686B1 (ko) * 2018-04-25 2020-08-11 한양대학교 산학협력단 Rf 신호를 이용하는 에너지 하베스팅 장치
IT201900002481A1 (it) * 2019-02-20 2020-08-20 Ask Ind Spa Metodo di realizzazione di un sensore microfonico piezoelettrico con struttura a pilastri.
KR102257275B1 (ko) * 2019-03-15 2021-05-28 에코디엠랩 주식회사 압전 스피커 및 이의 제조방법

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JP2010124030A (ja) * 2008-11-17 2010-06-03 Audio Technica Corp マイクロホンユニットの振動雑音調整方法
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JP2010124030A (ja) * 2008-11-17 2010-06-03 Audio Technica Corp マイクロホンユニットの振動雑音調整方法
KR101496192B1 (ko) * 2013-04-11 2015-02-27 싸니코전자 주식회사 피에조 진동판이 구비된 멤스 마이크로폰
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11553280B2 (en) 2019-06-05 2023-01-10 Skyworks Global Pte. Ltd. Piezoelectric MEMS diaphragm microphone
US11606646B2 (en) 2019-06-05 2023-03-14 Skyworks Solutions, Inc. Method of making a piezoelectric MEMS diaphragm microphone
US12395798B2 (en) 2019-06-05 2025-08-19 Skyworks Global Pte. Ltd. Method of making a piezoelectric MEMS diaphragm microphone
US11350219B2 (en) 2019-08-13 2022-05-31 Skyworks Solutions, Inc. Piezoelectric MEMS microphone
US11533567B2 (en) 2019-08-13 2022-12-20 Skyworks Solutions, Inc. Method of making a piezoelectric MEMS microphone
US11832057B2 (en) 2019-08-13 2023-11-28 Skyworks Solutions, Inc. Piezoelectric MEMS microphone
US12391546B1 (en) 2021-01-07 2025-08-19 Skyworks Global Pte. Ltd. Method of making acoustic devices with directional reinforcement
US12335687B2 (en) 2021-09-20 2025-06-17 Skyworks Solutions, Inc. Piezoelectric MEMS microphone with cantilevered separation
US12329033B2 (en) 2021-10-21 2025-06-10 Skyworks Solutions, Inc. Piezoelectric sensor with increased sensitivity and devices having the same

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