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WO2017069546A1 - Composition for work function reduction of metal oxide electron collection layer, inverted organic solar cell using same, and method for preparing inverted organic solar cell - Google Patents

Composition for work function reduction of metal oxide electron collection layer, inverted organic solar cell using same, and method for preparing inverted organic solar cell Download PDF

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Publication number
WO2017069546A1
WO2017069546A1 PCT/KR2016/011865 KR2016011865W WO2017069546A1 WO 2017069546 A1 WO2017069546 A1 WO 2017069546A1 KR 2016011865 W KR2016011865 W KR 2016011865W WO 2017069546 A1 WO2017069546 A1 WO 2017069546A1
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oxide
layer
work function
solar cell
organic solar
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French (fr)
Korean (ko)
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김영규
김화정
남성호
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Industry Academic Cooperation Foundation of KNU
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/84Layers having high charge carrier mobility
    • H10K30/86Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Definitions

  • the present invention relates to a composition for reducing work function of a metal oxide electron collecting layer, an inverse structure organic solar cell using the same, and a method of manufacturing the inverse structure organic solar cell.
  • Solar cells include solar cells that generate steam required to rotate turbines using solar heat, and solar cells that convert photons into electrical energy using the properties of semiconductors. Refers to an optical cell.
  • the organic solar cell can be made into a thin film with a thickness of several hundred nm and can be applied to a flexible structure, which is expected to be applied to various applications such as presenting the potential as an energy source of the future mobile information system. .
  • a general organic solar cell includes a lower electrode layer formed on a substrate, a hole transport layer formed in contact with the surface of the lower electrode layer, at least one active layer formed in contact with the surface of the hole transport layer, and an upper electrode layer formed on the active layer. do.
  • positive charges holes
  • negative charges electrons are moved to the electrode on the active layer, and holes are moved to the hole transport layer.
  • the active layer of the conventional organic solar cell is an electron donor material poly (3-hexylthiophene) (hereinafter referred to as P3HT) and an electron acceptor material 1- (3-methoxycarbonyl) -propyl- It is prepared using a mixture of 1-phenyl- (6,6) C 61 (1- (3-methoxycarbonyl) -propyl-1-phenyl- (6,6) C 61 , hereinafter PCBM).
  • an organic solar cell having an inverse structure is stable in air while utilizing metal oxides such as TiO 2 and ZnO to solve the problem. And, it is emerging as the most representative method that can be applied to the roll-to-roll process.
  • Inversely structured organic solar cells contain electrons from transparent electrodes (e.g., ITO or FTO) in contrast to the collection of holes from transparent electrodes such as indium-tin oxide (ITO) in the device structure of conventional positive structure organic solar cells.
  • transparent electrodes e.g., ITO or FTO
  • ITO indium-tin oxide
  • Collected to act as a cathode (cathode) the anode (Anode) may be used a metal such as Au, Ag.
  • the device structure of the reverse structure organic solar cell as described above may not use a metal such as Ca or Al, which is a highly reactive electron collecting electrode (cathode) used in a general positive structure organic solar cell device, and both a positive electrode and a negative electrode may be used.
  • a metal such as Ca or Al
  • cathode highly reactive electron collecting electrode
  • the high work-function allows the use of materials that are not reactive to air or moisture.
  • the 1st aspect of this invention provides the composition for reducing work function of the metal oxide electron collection layer containing the compound represented by following formula (1).
  • R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,
  • n is an integer of 50-10000.
  • a second aspect of the present invention includes a first electrode, a metal oxide electron collecting layer, a work function reducing layer, a photoactive layer, a hole collecting layer and a second electrode sequentially stacked on a substrate, wherein the work function reducing layer is It provides an inverse structure organic solar cell characterized in that it comprises a compound represented by the formula (1).
  • R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,
  • n is an integer of 50-10000.
  • a third aspect of the invention the first step of depositing a first electrode on a substrate; Stacking a metal oxide electron collecting layer on the first electrode; A third step of forming a work function reduction layer by coating a work function reduction composition of the metal oxide electron collection layer including the compound represented by Formula 1 on the metal oxide electron collecting layer; Stacking a photoactive layer on the work function reduction layer; Stacking a hole collecting layer on the photoactive layer; And a sixth step of stacking a second electrode on the hole collecting layer.
  • R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,
  • n is an integer of 50-10000.
  • the work function of the metal oxide electron collecting layer is lowered.
  • the efficiency of the inverse organic solar cell using the polymer is greatly improved. It was. That is, according to the present invention, when the poly (2-oxazoline) -based neutral polymer corresponding to the compound represented by Formula 1 is applied to the metal oxide electron collecting layer, the work function of the metal oxide electron collecting layer is reduced to reduce the metal oxide electron collecting layer. And the energy level between the photoactive layer and the photoactive layer were found to facilitate the transfer / collection of charge. The present invention is based on this.
  • the present invention provides a composition for reducing the work function of a metal oxide electron collecting layer comprising a compound represented by the following Chemical Formula 1.
  • R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,
  • n is an integer of 50-10000.
  • n when n is outside the above range, the synthesis may not be easy and the solubility may be degraded.
  • n is more preferably an integer of 100 to 6000.
  • the compound represented by Formula 1 may have a weight average molecular weight of 10000 to 500000, for example, 50000 to 100000.
  • the composition for reducing the work function of the metal oxide electron collecting layer according to the present invention may include a compound (PEOz) represented by the following formula (2).
  • n is an integer from 50 to 10000.
  • the metal oxide electron collecting layer may be used in an inverse structure organic solar cell, and in addition to this, the work function of the metal oxide electron collecting layer may be applied without limitation to an organic device.
  • the metal oxide of the metal oxide electron collecting layer to which the work function reduction composition according to the present invention is applicable is zinc oxide (ZnO), titanium oxide (TiO x , where x is 1, 2 or 3), oxidation Indium (In 2 O 3 ), tin oxide (SnO 2 ), zinc tin oxide (Zinc Tin Oxide), gallium oxide (Ga 2 O 3 ), aluminum oxide, copper oxide (Copper (II) Oxide), copper aluminum oxide ( Copper aluminum oxide, zinc rhodium oxide, indium-gallium zinc oxide (IGZO) or mixtures thereof may be used, but is not limited thereto.
  • the present invention includes a first electrode (cathode), a metal oxide electron collecting layer, a work function reduction layer, a photoactive layer, a hole collecting layer and a second electrode (anode) sequentially stacked on a substrate as shown in FIG. 1, It provides an inverse structure organic solar cell, characterized in that the work function reducing layer comprises a compound represented by the following formula (1).
  • R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,
  • n is an integer of 50-10000.
  • It may be prepared by a method comprising a sixth step of stacking a second electrode on the hole collecting layer.
  • R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,
  • n is an integer of 50-10000.
  • the compound represented by the formula (1) as a work function reducing layer to reduce the work function of the metal oxide electron collecting layer as shown in Figure 2 to control the energy structure of the overall reverse structure organic solar cell device, that is, It is possible to improve the performance of the inverse structure organic solar cell.
  • the substrate may be a light-transmitting inorganic substrate or an organic substrate, or may be a substrate in which they are stacked in the same or different types.
  • the substrate may be glass, quartz, polyethylene terephthalate (PET), polyethylene naphthelate (PEN), polyimide (PI), polycarbonate (PC), polystyrene ( polystylene (PS), polyoxyethlene (POM), acrylonitile styrene copolymer (AS resin), Triacetyl cellulose (TAC), or mixtures thereof.
  • the first electrode is preferably a light transmissive material such that light passing through the substrate reaches the photoactive layer, and may serve as a cathode that receives electrons generated in the photoactive layer and transfers the electrons to the external circuit.
  • the first electrode may be indium tin oxide (ITO), fluorinated tin oxide (FTO), indium zinc oxide (IZO), or aluminum-doped zinc oxide (Al-doped Zinc Oxide). , AZO), zinc oxide (ZnO), indium zinc oxide (IZTO), or mixtures thereof.
  • the first electrode may be formed by applying a transparent electrode material to one surface of the substrate or coating in a film form using sputtering, E-Beam, thermal evaporation, spin coating, screen printing, inkjet printing, doctor blade or gravure printing. Can be.
  • the metal oxide electron collecting layer may also be referred to as a metal oxide electron extraction layer, and may serve to receive electrons generated in the photoactive layer and transfer them to the first electrode.
  • a metal oxide electron extraction layer As the metal oxide of the metal oxide electron collecting layer, various metal oxides mentioned in the work function reduction composition according to the present invention may be used without limitation.
  • a work function reducing layer including the neutral polymer represented by Chemical Formula 1 is formed on the surface of the metal oxide electron collecting layer.
  • the work function reduction layer may be formed in a nano-dot structure. As the work function reduction layer is formed in the nano-point structure, the area with the electrode can be increased, thereby collecting a larger amount of charge.
  • the work function reduction layer may be formed by coating a solution having a concentration of 1 to 10 mg / ml of the compound represented by Chemical Formula 1 on the metal oxide electron collecting layer.
  • a solution having a concentration of 2 to 5 mg / ml of the compound represented by Formula 1 in terms of work function reduction efficiency.
  • the work function reduction layer is deposited on the metal oxide electron collecting layer through a solution process, for example, spin coating or spray coating, to form a coating layer on the surface of the metal oxide electron collecting layer and lower its work function.
  • the coating solution for forming the work function reduction layer may use an organic solvent such as methanol, chlorobenzene, chloroform or para xylene as a solvent.
  • a photoactive layer is formed on the work function reduction layer.
  • the photoactive layer may be formed by applying a mixed solution of an electron acceptor material and an electron donor material onto the work function reduction layer and then drying the solvent.
  • the coating process may use a known coating method such as spin coating, spray coating, doctor blade coating, and inkjet printing, and may be preferably performed by spin coating.
  • the electron donor material refers to a material that absorbs sunlight to form electron-hole pairs (excitons) and moves holes separated at the pn junction interface between the electron donor material and the electron acceptor material toward the anode. .
  • the electron donor material may be a conjugated polymer that can be used as a p-type semiconductor, polythiophene-based, polyfluorene-based, polyaniline-based, polycarbazole-based, polyvinylcarba It may be a sol (polyvinylcarbazole), polyphenylene (polyphenylene), polyphenylenevinylene (polyphenylenevinylene), polysilane (polysilane), polythiazole (polythiazole) or a copolymer thereof.
  • electron donor materials include PBDTTT-C-T, PTB7-Th, PBDTT-S-TT, PBDT-TS1, PBDTTT-C, and PTB7.
  • the electron acceptor material means a material that serves to move the electrons separated at the pn junction interface in the photoactive layer toward the cathode.
  • the electron acceptor material is fullerene and PC61BM ([6,6] -phenyl-C61-butyric acid methyl ester), PC 71 BM ([6,6] -phenyl- which can be used as an n-type semiconductor. C 71 -butyric acid methyl ester), PC81BM ([6,6] -phenyl-C81-butyric acid methyl ester), and fullerene derivatives such as ICBA (indene-C60 bisadduct).
  • the hole collecting layer is a p-type buffer layer that allows the holes generated in the photoactive layer to be easily transferred to the anode, also called a hole transport layer.
  • the hole collecting layer may be a conductive metal oxide, a compounded organic of poly (3,4-ethylenedioxythiophene) [PEDOT] and poly (3-styrenesulfonate) [PSS], or a mixture thereof.
  • a conductive metal oxide a compounded organic of poly (3,4-ethylenedioxythiophene) [PEDOT] and poly (3-styrenesulfonate) [PSS], or a mixture thereof.
  • the conductive metal oxide at least one of WO 3 , V 2 O 3 , MoO 3 , and the like may be used.
  • the second electrode is a layer serving as an anode that finally collects holes and delivers the holes to an external circuit.
  • the second electrode may be any one selected from metals, alloys, conductive polymers, other conductive compounds, and combinations thereof.
  • the second electrode is preferably a material having a high oxidation stability against exposure to the atmosphere.
  • a material having a high work function such as Cu, Ag, Au, W, Ni, and Ti. desirable.
  • each of the above layers may be formed by thermal image deposition, electron beam deposition, sputtering, ion plating or chemical vapor deposition, and the work function reduction layer may be formed by a solution process as described above.
  • the electrodes may be formed by applying an electrode forming paste including a metal and then heat treatment.
  • the present invention lowers the work function of the metal oxide by modifying the surface of the metal oxide electron collecting layer, which is a component of the inverse structure organic solar cell, using a neutral polymer, thereby increasing the built-in potential, and the neutral polymer.
  • the efficiency of the inverse organic solar cell using the polymer can be greatly improved.
  • it is expected to accelerate the commercialization of polymer solar cells by developing high efficiency organic solar cells of 10% or more, and is expected to play a big role in the development of organic solar cells that can be bent and worn on the body.
  • FIG. 1 is a schematic diagram of an inverse structure organic solar cell according to the present invention.
  • FIG. 2 is a schematic diagram of an energy structure of an inverse organic solar cell according to the present invention.
  • Figure 3 shows the results of the UPS measurement on each surface according to the PEOz concentration control on the ZnO surface.
  • Figure 4 shows the results of the EFM measurement on each surface according to the PEOz concentration control on the ZnO surface.
  • FIG. 5 is a schematic diagram illustrating a lower work function of ZnO based on the results of UPS and EFM measurements.
  • FIG. 6 is a schematic diagram showing a laminated structure of an inverse structure organic solar cell according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram showing the energy structure of an inverse structure organic solar cell according to an embodiment of the present invention.
  • FIG. 8 is a current density-voltage graph of the device according to the concentration of PEOz for the organic solar cell of the inverse structure type fabricated in Example 2.
  • FIG. 8 is a current density-voltage graph of the device according to the concentration of PEOz for the organic solar cell of the inverse structure type fabricated in Example 2.
  • FIG. 11 is an AES imaging result of a work function reduction layer, that is, a PEOz layer (ZnO / PEOz 4 mg / ml) and an untreated ZnO surface, by adjusting the concentration of PEOz to 4 mg / ml.
  • a work function reduction layer that is, a PEOz layer (ZnO / PEOz 4 mg / ml) and an untreated ZnO surface, by adjusting the concentration of PEOz to 4 mg / ml.
  • FIG. 13 is a schematic view of an inverse structure organic solar cell according to the present invention including a PEOz layer having a nanopoint structure as a work function reduction layer.
  • the UPS was measured using an ultra-high vacuum (UHV) UPS system (ESCALAB 250Xi, Thermo Scientific) at 1 ⁇ 10 ⁇ 9 mbar using a He I (21.2 eV) UV light source. All samples were biased at -5 V and the energy scale of the UPS spectrum was corrected to the Fermi level of the thermally-evaporated-cleaned Ag substrate.
  • the valence band energy of the ZnO layer was obtained at 7.7 eV from the low binding energy portion of the corresponding UPS spectrum after calibration with the cleaned Ag reference electrode, and the conduction band energy of the ZnO layer was from the valence band energy (3.4 eV) Calculated by subtracting
  • the valence band maximum of the PEOz-coated ZnO layer was calculated using the following equation:
  • E VBM P IN - (E CF - E ON)
  • E VBM , P IN , E CF and E ON are valence band maximum, incident photon energy (21.2 eV), binding energy in the cutoff region, and onset binding energy, respectively.
  • ZnO surface was modified through the concentration control (thickness control) (0, 4, 8 mg / ml) of PEOz using methanol as a solvent, and the electrostatic force microscopy (EMF) was measured as follows.
  • the work function was measured with EFM (XE-150, Park Systems) and calibrated with highly ordered pyrolytic graphite (HOPG).
  • An organic solar cell of an inverse structure type having an energy structure as shown in FIG. 7 in a laminated structure as shown in FIG. 6 while using a PEOz-containing work function reduction coating solution was manufactured as follows.
  • PC71BM purity> 99%
  • DIO 1,8-dioodooctane
  • CB chlorobenzene
  • ZnO precursor solution was dissolved zinc acetate dihydrate (Sigma-Al
  • ITO Indium-tin oxide
  • sheet resistance 10 ⁇ / cm 2
  • ZnO precursor solution was spin coated onto the cleaned ITO-glass substrate and the resulting ITO / ZnO sample was annealed at 200 ° C. for 1 hour in air.
  • the PEOz solution was spin coated onto the surface of the ZnO layer and annealed at 120 ° C. for 15 minutes.
  • PEOz-coated samples were placed in a nitrogen filled glove box for photoactive layer coating.
  • the PTB7-Th: PC 71 BM BHJ layer was spin coated on top of the PEOz-coated ZnO layer and dried for 20 minutes inside the glove box.
  • These samples were then placed in a vacuum chamber in an argon filled glove box. In the vacuum chamber, MoO 3 (10 nm) and Ag (80 nm) were sequentially deposited on top of the BHJ layer through a shadow mask at a vacuum of 2 ⁇ 10 ⁇ 6 Torr.
  • the active area of the device was 0.05 cm 2 or 0.09 cm 2 .
  • the current density-voltage graph of the device according to the concentration of PEOz was calculated using a solar simulator (92250A-1000, Newport-Oriel) and an electrometer (Model 2400, Keithley's solar cell measurement system was used.
  • the external quantum efficiency (EQE) according to the concentration of PEOz for the inverse structure type organic solar cell manufactured in Example 2 is a light source (Tungsten-Halogen lamp, 150 W, ASBN-W, Spectral Products) And a special EQE measurement system equipped with a monochromatic spectrometer (CM110, Spectral Products).
  • the concentration of PEOz was adjusted to 4 mg / ml, thereby modifying the ZnO surface on the glass substrate / ITO, that is, a PEOz layer (ZnO / PEOz 4 mg / ml) and untreated ZnO.
  • Surfaces were measured by Auger Electron Spectroscopy (AES) imaging.
  • a glass substrate / ITO / ZnO layer was laminated under the same conditions as in Example 2, and the surface of the ZnO was modified at a concentration of 4 mg / ml of PEOz. Then, AES imaging was measured.
  • the PEOz layer is formed in a nano-dot structure.
  • the PEOz layer is formed with a nano-dot structure.
  • FIG. 13 A schematic diagram of the inverse structure organic solar cell according to the present invention including the PEOz layer having the nanopoint structure as the work function reduction layer is illustrated in FIG. 13.

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Abstract

The present invention relates to a composition for work function reduction of a metal oxide electron collection layer, an inverted organic solar cell using same, and a method for preparing the inverted organic solar cell. According to the present invention, the surface of a metal oxide electron collection layer, which is a constituent element of an inverted organic solar cell, is modified by means of a neutral polymer and thus the work function of the metal oxide is reduced and a built-in potential is increased. And charge can be easily moved and collected by means of the forming of polymer nanodots due to the neutral polymer. Therefore, the efficiency of an inverted organic solar cell using a polymer can be greatly increased.

Description

금속 산화물 전자수집층의 일함수 저감용 조성물, 이를 이용한 역구조 유기 태양전지 및 상기 역구조 유기 태양전지의 제조방법Composition for reducing work function of metal oxide electron collecting layer, reverse structure organic solar cell using same, and method for manufacturing reverse structure organic solar cell

본 발명은 금속 산화물 전자수집층의 일함수 저감용 조성물, 이를 이용한 역구조 유기 태양전지 및 상기 역구조 유기 태양전지의 제조방법에 관한 것이다.The present invention relates to a composition for reducing work function of a metal oxide electron collecting layer, an inverse structure organic solar cell using the same, and a method of manufacturing the inverse structure organic solar cell.

최근 석유나 석탄과 같은 기존 에너지 자원의 고갈이 예측되면서 이들을 대체할 에너지에 대한 관심이 높아지고 있다. 그 중에서도 태양전지는 에너지 자원이 풍부하고 환경오염에 대한 문제점이 없어, 특히 주목 받고 있다.Recently, with the anticipation of the depletion of existing energy resources such as oil and coal, there is increasing interest in energy to replace them. Among them, solar cells have abundant energy resources and have no problems with environmental pollution.

태양전지에는 태양열을 이용하여 터빈을 회전시키는데 필요한 증기를 발생시키는 태양열 전지와, 반도체의 성질을 이용하여 태양광(photons)을 전기 에너지로 변환시키는 태양광 전지가 있으며, 태양전지라고 하면 일반적으로 태양광 전지를 일컫는다.Solar cells include solar cells that generate steam required to rotate turbines using solar heat, and solar cells that convert photons into electrical energy using the properties of semiconductors. Refers to an optical cell.

실용화되고 있는 태양전지의 대부분은 단결정 실리콘, 다결정 실리콘, 무정형 실리콘과 같은 무기물을 이용한 무기태양전지이다. 그러나, 이러한 무기 태양전지는 제조 프로세스가 복잡하여 제조비용이 높아 일반 가정용으로 보급되기에는 부적합하기 때문에 무기 태양전지의 제조 프로세스에 비해 상대적으로 간단한 제조 프로세스를 통하여 제조비용이 적게 드는 유기 태양전지의 연구가 활발히 진행되고 있다.Most of the solar cells that are in practical use are inorganic solar cells using inorganic materials such as monocrystalline silicon, polycrystalline silicon, and amorphous silicon. However, since the inorganic solar cell is complicated to manufacture and is not suitable for general household use due to its high manufacturing cost, research on organic solar cells having a lower manufacturing cost through a relatively simple manufacturing process than the inorganic solar cell manufacturing process is performed. Is actively underway.

또한, 유기 태양전지는 수 100 ㎚ 이내의 두께의 박막으로 만들 수 있으며 유연한 구조로의 적용이 가능하다는 장점이 있어 미래 이동식 정보시스템의 에너지원으로서의 가능성을 제시하는 등 다양한 용도로의 응용이 기대된다.In addition, the organic solar cell can be made into a thin film with a thickness of several hundred nm and can be applied to a flexible structure, which is expected to be applied to various applications such as presenting the potential as an energy source of the future mobile information system. .

일반적인 유기 태양전지는 기판에 형성되는 하부전극층과, 상기 하부전극층의 표면에 접하여 형성되는 정공수송층과, 상기 정공수송층의 표면에 접하여 형성되는 적어도 하나의 활성층 및 상기 활성 층상에 형성되는 상부전극층을 포함한다. 상기 유기 태양전지에 빛이 투사될 경우, 활성층에서 양전하(정공)와 음전하 (전자)가 생성되며, 전자는 활성층 상부의 전극으로 이동되고, 정공은 정공수송층으로 이동된다. 종래의 유기 태양전지의 활성층은 전자주게 물질인 폴리(3-헥실티오펜)(poly(3-hexylthiophene), 이하 P3HT)과, 전자받게 물질인 1-(3-메톡시카르보닐)-프로필-1-페닐-(6,6)C61(1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61, 이하 PCBM)의 혼합물을 이용하여 제조되고 있다.A general organic solar cell includes a lower electrode layer formed on a substrate, a hole transport layer formed in contact with the surface of the lower electrode layer, at least one active layer formed in contact with the surface of the hole transport layer, and an upper electrode layer formed on the active layer. do. When light is projected onto the organic solar cell, positive charges (holes) and negative charges (electrons) are generated in the active layer, electrons are moved to the electrode on the active layer, and holes are moved to the hole transport layer. The active layer of the conventional organic solar cell is an electron donor material poly (3-hexylthiophene) (hereinafter referred to as P3HT) and an electron acceptor material 1- (3-methoxycarbonyl) -propyl- It is prepared using a mixture of 1-phenyl- (6,6) C 61 (1- (3-methoxycarbonyl) -propyl-1-phenyl- (6,6) C 61 , hereinafter PCBM).

이러한, 유기태양전지의 고효율, 장수명 및 소자구조 단순화 등이 요구됨에 따라, 이를 해결하기 위하여 TiO2, ZnO 등의 금속 산화물(metal oxide)을 활용하면서, 역구조를 갖는 유기태양전지가 공기 중에서 안정하고, 롤-투-롤(roll-to-roll) 공정에 적용될 수 있는 가장 대표적인 방안으로 대두되고 있다.As the high efficiency, long life and simplification of the device structure of the organic solar cell are required, an organic solar cell having an inverse structure is stable in air while utilizing metal oxides such as TiO 2 and ZnO to solve the problem. And, it is emerging as the most representative method that can be applied to the roll-to-roll process.

역구조 유기태양전지는 일반적인 정구조 유기태양전지의 소자 구조에서 인듐-주석 산화물(ITO)과 같은 투명전극으로부터 정공이 수집되는 것과 대조적으로, 투명전극(예를 들어, ITO 또는 FTO)으로부터 전자가 수집되어 음극(Cathode) 역할을 하며, 양극(Anode)은 Au, Ag과 같은 금속을 사용할 수 있다.Inversely structured organic solar cells contain electrons from transparent electrodes (e.g., ITO or FTO) in contrast to the collection of holes from transparent electrodes such as indium-tin oxide (ITO) in the device structure of conventional positive structure organic solar cells. Collected to act as a cathode (cathode), the anode (Anode) may be used a metal such as Au, Ag.

상기와 같은 역구조 유기태양전지의 소자 구조는 일반적인 정구조 유기태양전지 소자에서 사용하는 반응성이 높은 전자 수집 전극(음극)인 Ca, Al 등의 금속을 사용하지 않을 수 있으며, 양극과 음극 모두 일함수(work-function)가 높아 공기나 수분에 반응성이 없는 물질들을 사용할 수 있다는 장점이 있다.The device structure of the reverse structure organic solar cell as described above may not use a metal such as Ca or Al, which is a highly reactive electron collecting electrode (cathode) used in a general positive structure organic solar cell device, and both a positive electrode and a negative electrode may be used. The high work-function allows the use of materials that are not reactive to air or moisture.

또한, 역구조 유기태양전지의 전자수집층으로 유기물 이외의 금속 산화물을 이용할 경우 가시광선 영역에서의 투명도(Transparency)가 우수하고, 전하 수송(charge transport) 능력이 우수하고, 공기 중에서도 안정하므로, 주로 용액 공정으로 형성되는 금속 산화물을 역구조 유기태양전지 소자에 응용하려는 시도가 많이 이루어지고 있다.In addition, in the case of using a metal oxide other than an organic material as the electron collecting layer of the inverse structure organic solar cell, it has excellent transparency in the visible light region, excellent charge transport ability, and is stable in air. Attempts have been made to apply metal oxides formed by solution processes to reverse structure organic solar cell devices.

본 발명의 목적은 고분자 나노점을 형성할 수 있는 금속 산화물 전자수집층의 일함수 저감용 조성물, 이를 이용한 역구조 유기 태양전지 및 상기 역구조 유기 태양전지의 제조방법을 제공하는 것이다.It is an object of the present invention to provide a composition for reducing the work function of a metal oxide electron collecting layer capable of forming a polymer nanopoint, an inverse structure organic solar cell using the same, and a method of manufacturing the inverse structure organic solar cell.

본 발명의 제1양태는, 하기 화학식 1로 표시되는 화합물을 포함하는 금속 산화물 전자수집층의 일함수 저감용 조성물을 제공한다.The 1st aspect of this invention provides the composition for reducing work function of the metal oxide electron collection layer containing the compound represented by following formula (1).

[화학식 1][Formula 1]

Figure PCTKR2016011865-appb-I000001
Figure PCTKR2016011865-appb-I000001

상기 식에서, Where

R은 C1-6 알킬, C2-6 알케닐, C2-6 알키닐 또는 C1-6 알콕시이고, R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,

n은 50 내지 10000의 정수이다.n is an integer of 50-10000.

본 발명의 제2양태는, 기판상에 순차 적층된 제1 전극, 금속 산화물 전자수집층, 일함수 저감층, 광활성층, 정공수집층 및 제2 전극을 포함하고, 상기 일함수 저감층이 하기 화학식 1로 표시되는 화합물을 포함하는 것이 특징인 역구조 유기 태양전지를 제공한다.A second aspect of the present invention includes a first electrode, a metal oxide electron collecting layer, a work function reducing layer, a photoactive layer, a hole collecting layer and a second electrode sequentially stacked on a substrate, wherein the work function reducing layer is It provides an inverse structure organic solar cell characterized in that it comprises a compound represented by the formula (1).

[화학식 1][Formula 1]

Figure PCTKR2016011865-appb-I000002
Figure PCTKR2016011865-appb-I000002

상기 식에서, Where

R은 C1-6 알킬, C2-6 알케닐, C2-6 알키닐 또는 C1-6 알콕시이고, R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,

n은 50 내지 10000의 정수이다.n is an integer of 50-10000.

본 발명의 제3양태는, 기판 상에 제1전극을 적층하는 제1단계; 상기 제1전극 상에 금속 산화물 전자수집층을 적층하는 제2단계; 상기 금속 산화물 전자수집층 상에 하기 화학식 1로 표시되는 화합물을 포함하는 금속 산화물 전자수집층의 일함수 저감용 조성물을 코팅하여 일함수 저감층을 형성시키는 제3단계; 상기 일함수 저감층 상에 광활성층을 적층하는 제4단계; 상기 광활성층 상에 정공수집층을 적층하는 제5단계; 및 상기 정공수집층 상에 제2전극을 적층하는 제6단계를 포함하는 역구조 유기 태양전지의 제조방법을 제공한다.A third aspect of the invention, the first step of depositing a first electrode on a substrate; Stacking a metal oxide electron collecting layer on the first electrode; A third step of forming a work function reduction layer by coating a work function reduction composition of the metal oxide electron collection layer including the compound represented by Formula 1 on the metal oxide electron collecting layer; Stacking a photoactive layer on the work function reduction layer; Stacking a hole collecting layer on the photoactive layer; And a sixth step of stacking a second electrode on the hole collecting layer.

[화학식 1][Formula 1]

Figure PCTKR2016011865-appb-I000003
Figure PCTKR2016011865-appb-I000003

상기 식에서, Where

R은 C1-6 알킬, C2-6 알케닐, C2-6 알키닐 또는 C1-6 알콕시이고, R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,

n은 50 내지 10000의 정수이다.n is an integer of 50-10000.

이하, 본 발명을 자세히 설명한다.Hereinafter, the present invention will be described in detail.

본 발명에서는 역구조 유기 태양전지의 구성요소인 금속산화물 전자수집층의 표면을, 일함수 저감 물질로서 화학식 1로 표시되는 중성 고분자를 이용하여 개질할 경우, 금속산화물 전자수집층의 일함수를 낮추어 내부확산전위(built-in potential)을 증가시키고, 상기 중성 고분자에 의한 고분자 나노점 형성을 통해 전하의 이동/수집을 용이하게 함으로써, 고분자를 이용한 역구조 유기 태양전지의 효율이 크게 향상되는 것을 발견하였다. 즉, 본 발명은 화학식 1로 표시되는 화합물에 해당하는 폴리(2-옥사졸린) 계열의 중성 고분자가 금속산화물 전자수집층에 적용될 경우 금속산화물 전자수집층의 일함수를 감소시켜 금속산화물 전자수집층과 광활성층 사이에서 에너지 준위를 조절하여 전하의 이동/수집을 용이하게 할 수 있음을 발견한 것이다. 본 발명은 이에 기초한다.In the present invention, when the surface of the metal oxide electron collecting layer, which is a component of the reverse structure organic solar cell, is modified by using a neutral polymer represented by Formula 1 as a work function reducing material, the work function of the metal oxide electron collecting layer is lowered. By increasing the built-in potential and facilitating the movement and collection of charges through the formation of polymer nanopoints by the neutral polymer, the efficiency of the inverse organic solar cell using the polymer is greatly improved. It was. That is, according to the present invention, when the poly (2-oxazoline) -based neutral polymer corresponding to the compound represented by Formula 1 is applied to the metal oxide electron collecting layer, the work function of the metal oxide electron collecting layer is reduced to reduce the metal oxide electron collecting layer. And the energy level between the photoactive layer and the photoactive layer were found to facilitate the transfer / collection of charge. The present invention is based on this.

전술한 바와 같이, 본 발명은 하기 화학식 1로 표시되는 화합물을 포함하는 금속 산화물 전자수집층의 일함수 저감용 조성물을 제공한다.As described above, the present invention provides a composition for reducing the work function of a metal oxide electron collecting layer comprising a compound represented by the following Chemical Formula 1.

[화학식 1][Formula 1]

Figure PCTKR2016011865-appb-I000004
Figure PCTKR2016011865-appb-I000004

상기 식에서, Where

R은 C1-6 알킬, C2-6 알케닐, C2-6 알키닐 또는 C1-6 알콕시이고, R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,

n은 50 내지 10000의 정수이다.n is an integer of 50-10000.

본 발명에서, n이 상기 범위 밖이면 합성이 용이하지 않을 수 있고 용해도가 떨어질 수 있다.In the present invention, when n is outside the above range, the synthesis may not be easy and the solubility may be degraded.

본 발명에서, n은 더욱 바람직하기로 100 내지 6000의 정수이다.In the present invention, n is more preferably an integer of 100 to 6000.

본 발명에서, 상기 화학식 1로 표시되는 화합물은 무게평균분자량이 10000 내지 500000, 예를 들어 50000 내지 100000일 수 있다.In the present invention, the compound represented by Formula 1 may have a weight average molecular weight of 10000 to 500000, for example, 50000 to 100000.

일 실시예로서, 본 발명에 따른 금속 산화물 전자수집층의 일함수 저감용 조성물은 하기 화학식 2로 표시되는 화합물(PEOz)을 포함할 수 있다.In one embodiment, the composition for reducing the work function of the metal oxide electron collecting layer according to the present invention may include a compound (PEOz) represented by the following formula (2).

[화학식 2][Formula 2]

Figure PCTKR2016011865-appb-I000005
Figure PCTKR2016011865-appb-I000005

상기 식에서, n은 50 내지 10000의 정수이다.Wherein n is an integer from 50 to 10000.

본 발명에서, 상기 금속 산화물 전자수집층은 역구조 유기 태양전지에 사용되는 것일 수 있으며, 이 외에도 금속 산화물 전자수집층의 일함수가 감소되는 것이 바람직한 유기소자에 제한없이 적용될 수 있다.In the present invention, the metal oxide electron collecting layer may be used in an inverse structure organic solar cell, and in addition to this, the work function of the metal oxide electron collecting layer may be applied without limitation to an organic device.

본 발명에서, 본 발명에 따른 일함수 저감용 조성물이 적용가능한 금속 산화물 전자수집층의 금속 산화물로는 산화아연(ZnO), 산화티타늄(TiOx, 여기서 x는 1, 2 또는 3임), 산화인듐(In2O3), 산화주석(SnO2), 산화아연주석(Zinc Tin Oxide), 산화갈륨 (Ga2O3), 산화알루미늄, 산화구리(Copper(II) Oxide), 산화구리알루미늄(Copper Aluminium Oxide), 산화아연로듐 (Zinc Rhodium Oxide), IGZO (indium-Gallium Zinc Oxide) 또는 이의 혼합물을 사용할 수 있으며, 이에 제한되는 것은 아니다.In the present invention, the metal oxide of the metal oxide electron collecting layer to which the work function reduction composition according to the present invention is applicable is zinc oxide (ZnO), titanium oxide (TiO x , where x is 1, 2 or 3), oxidation Indium (In 2 O 3 ), tin oxide (SnO 2 ), zinc tin oxide (Zinc Tin Oxide), gallium oxide (Ga 2 O 3 ), aluminum oxide, copper oxide (Copper (II) Oxide), copper aluminum oxide ( Copper aluminum oxide, zinc rhodium oxide, indium-gallium zinc oxide (IGZO) or mixtures thereof may be used, but is not limited thereto.

또한, 본 발명은 도 1과 같이 기판상에 순차 적층된 제1 전극(음극), 금속 산화물 전자수집층, 일함수 저감층, 광활성층, 정공수집층 및 제2 전극(양극)을 포함하고, 상기 일함수 저감층이 하기 화학식 1로 표시되는 화합물을 포함하는 것이 특징인 역구조 유기 태양전지를 제공한다.In addition, the present invention includes a first electrode (cathode), a metal oxide electron collecting layer, a work function reduction layer, a photoactive layer, a hole collecting layer and a second electrode (anode) sequentially stacked on a substrate as shown in FIG. 1, It provides an inverse structure organic solar cell, characterized in that the work function reducing layer comprises a compound represented by the following formula (1).

[화학식 1][Formula 1]

Figure PCTKR2016011865-appb-I000006
Figure PCTKR2016011865-appb-I000006

상기 식에서, Where

R은 C1-6 알킬, C2-6 알케닐, C2-6 알키닐 또는 C1-6 알콕시이고, R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,

n은 50 내지 10000의 정수이다.n is an integer of 50-10000.

본 발명에 따른 역구조 유기 태양전지는, Inverse structure organic solar cell according to the present invention,

기판 상에 제1전극을 적층하는 제1단계;Stacking a first electrode on a substrate;

상기 제1전극 상에 금속 산화물 전자수집층을 적층하는 제2단계;Stacking a metal oxide electron collecting layer on the first electrode;

상기 금속 산화물 전자수집층 상에 하기 화학식 1로 표시되는 화합물을 포함하는 금속 산화물 전자수집층의 일함수 저감용 조성물을 코팅하여 일함수 저감층을 형성시키는 제3단계;A third step of forming a work function reduction layer by coating a work function reduction composition of the metal oxide electron collection layer including the compound represented by Formula 1 on the metal oxide electron collecting layer;

상기 일함수 저감층 상에 광활성층을 적층하는 제4단계;Stacking a photoactive layer on the work function reduction layer;

상기 광활성층 상에 정공수집층을 적층하는 제5단계; 및Stacking a hole collecting layer on the photoactive layer; And

상기 정공수집층 상에 제2전극을 적층하는 제6단계를 포함하는 방법으로 제조될 수 있다.It may be prepared by a method comprising a sixth step of stacking a second electrode on the hole collecting layer.

[화학식 1][Formula 1]

Figure PCTKR2016011865-appb-I000007
Figure PCTKR2016011865-appb-I000007

상기 식에서, Where

R은 C1-6 알킬, C2-6 알케닐, C2-6 알키닐 또는 C1-6 알콕시이고, R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy,

n은 50 내지 10000의 정수이다.n is an integer of 50-10000.

본 발명에서는 화학식 1로 표시되는 화합물을 일함수 저감층으로서 적용하여 도 2에 도시된 바와 같이 금속 산화물 전자수집층의 일함수를 저감시켜 전체적인 역구조 유기 태양전지의 에너지 구조를 조절하여 소자, 즉 역구조 유기 태양전지의 성능을 향상시킬 수 있다.In the present invention, by applying the compound represented by the formula (1) as a work function reducing layer to reduce the work function of the metal oxide electron collecting layer as shown in Figure 2 to control the energy structure of the overall reverse structure organic solar cell device, that is, It is possible to improve the performance of the inverse structure organic solar cell.

본 발명에서, 기판은 광투과성의 무기물 기판 또는 유기물 기판이거나, 이들이 동종 또는 이종으로 적층된 기판일 수 있다. 예를 들어, 상기 기판은 유리, 석영, 폴리에틸렌 테레프타레이트(polyethylene terephthalate: PET), 폴리에틸렌 나프탈레이트(polyethylene naphthelate:PEN), 폴리이미드(polyimide:PI), 폴리카보네이트(polycarbonate:PC), 폴리스틸렌(polystylene:PS), 폴리옥시에틸렌(polyoxyethlene:POM), 아크릴로나이트릴-스타이렌수지 (acrylonitile styrene copolymer:AS 수지), 트리아세틸 셀룰로오즈(Triacetyl cellulose:TAC) 또는 이의 혼합물일 수 있다.In the present invention, the substrate may be a light-transmitting inorganic substrate or an organic substrate, or may be a substrate in which they are stacked in the same or different types. For example, the substrate may be glass, quartz, polyethylene terephthalate (PET), polyethylene naphthelate (PEN), polyimide (PI), polycarbonate (PC), polystyrene ( polystylene (PS), polyoxyethlene (POM), acrylonitile styrene copolymer (AS resin), Triacetyl cellulose (TAC), or mixtures thereof.

제1전극은 상기 기판을 통과한 빛이 광활성층에 달하도록 광투과성 물질인 것이 바람직하며, 광활성층에서 생성된 전자를 받아 외부 회로로 전달하는 음극의 역할을 수행할 수 있다. 상기 제1 전극은 인듐 주석 산화물(Indium Tin Oxide, ITO), 플루오르화 주석 산화물(Fluorinated Tin Oxide, FTO), 인듐 아연 산화물(Indium Zinc Oxide, IZO), 알루미늄 도핑된 아연 산화물(Al-doped Zinc Oxide, AZO), 산화아연(Zinc Oxide, ZnO), 인듐 아연 산화물(Indium Zinc Tin Oxide, IZTO) 또는 이의 혼합물일 수 있다.The first electrode is preferably a light transmissive material such that light passing through the substrate reaches the photoactive layer, and may serve as a cathode that receives electrons generated in the photoactive layer and transfers the electrons to the external circuit. The first electrode may be indium tin oxide (ITO), fluorinated tin oxide (FTO), indium zinc oxide (IZO), or aluminum-doped zinc oxide (Al-doped Zinc Oxide). , AZO), zinc oxide (ZnO), indium zinc oxide (IZTO), or mixtures thereof.

상기 제1전극은 스퍼터링, E-Beam, 열증착, 스핀코팅, 스크린 프린팅, 잉크젯 프린팅, 닥터 블레이드 또는 그라비아 프린팅법을 사용하여 투명전극 물질을 상기 기판의 일면에 도포되거나 필름형태로 코팅됨으로써 형성될 수 있다.The first electrode may be formed by applying a transparent electrode material to one surface of the substrate or coating in a film form using sputtering, E-Beam, thermal evaporation, spin coating, screen printing, inkjet printing, doctor blade or gravure printing. Can be.

금속 산화물 전자수집층은 금속 산화물 전자추출층이라고도 하며, 광활성층에서 생성된 전자를 받아 제1전극으로 전달하는 역할을 수행할 수 있다. 상기 금속 산화물 전자수집층의 금속 산화물은 상기 본 발명에 따른 일함수 저감용 조성물에서 언급한 다양한 금속 산화물들이 제한없이 사용가능하다.The metal oxide electron collecting layer may also be referred to as a metal oxide electron extraction layer, and may serve to receive electrons generated in the photoactive layer and transfer them to the first electrode. As the metal oxide of the metal oxide electron collecting layer, various metal oxides mentioned in the work function reduction composition according to the present invention may be used without limitation.

본 발명에서는 금속 산화물 전자수집층의 일함수를 낮추기 위해 금속 산화물 전자수집층의 표면에 화학식 1로 표시되는 중성 고분자를 포함하는 일함수 저감층을 형성시킨다. 상기 일함수 저감층은 나노점(nano-dot) 구조로 형성되어 있을 수 있다. 일함수 저감층이 나노점 구조로 형성됨으로써 전극과의 면적이 넓어질 수 있어 더 많은 양의 전하를 수집할 수 있다.In the present invention, in order to lower the work function of the metal oxide electron collecting layer, a work function reducing layer including the neutral polymer represented by Chemical Formula 1 is formed on the surface of the metal oxide electron collecting layer. The work function reduction layer may be formed in a nano-dot structure. As the work function reduction layer is formed in the nano-point structure, the area with the electrode can be increased, thereby collecting a larger amount of charge.

본 발명에서, 상기 일함수 저감층은 상기 화학식 1로 표시되는 화합물의 농도가 1 내지 10 ㎎/㎖인 용액을 금속 산화물 전자수집층 상에 코팅하여 형성될 수 있다. 바람직하기로, 상기 화학식 1로 표시되는 화합물의 농도가 2 내지 5 ㎎/㎖인 용액을 사용하는 것이 일함수 저감 효율면에서 좋다. 상기 일함수 저감층은 용액 공정, 예를 들어 스핀코팅 또는 스프레이코팅을 통해 금속 산화물 전자수집층 상에 증착하여 금속 산화물 전자수집층 표면에서 코팅층을 형성하고 이의 일함수를 낮춘다. 이때 일함수 저감층 형성용 코팅 용액은 용매로서 메탄올, 클로로벤젠, 클로로포름 또는 파라자일렌 등의 유기 용매를 사용할 수 있다.In the present invention, the work function reduction layer may be formed by coating a solution having a concentration of 1 to 10 mg / ml of the compound represented by Chemical Formula 1 on the metal oxide electron collecting layer. Preferably, it is preferable to use a solution having a concentration of 2 to 5 mg / ml of the compound represented by Formula 1 in terms of work function reduction efficiency. The work function reduction layer is deposited on the metal oxide electron collecting layer through a solution process, for example, spin coating or spray coating, to form a coating layer on the surface of the metal oxide electron collecting layer and lower its work function. In this case, the coating solution for forming the work function reduction layer may use an organic solvent such as methanol, chlorobenzene, chloroform or para xylene as a solvent.

상기 일함수 저감층 상에 광활성층이 형성된다. 상기 광활성층은 전자 받개 물질과 전자 주개 물질의 혼합 용액을 상기 일함수 저감층 상에 도포한 후 용매를 건조시키는 용액공정을 통해 형성할 수 있다. 상기 도포 공정은 스핀 코팅, 스프레이 코팅, 닥터블레이드 코팅 및 잉크젯 프린팅 등 공지된 통상의 코팅법을 사용할 수 있으며, 바람직하게는 스핀 코팅법에 의해 수행될 수 있다.A photoactive layer is formed on the work function reduction layer. The photoactive layer may be formed by applying a mixed solution of an electron acceptor material and an electron donor material onto the work function reduction layer and then drying the solvent. The coating process may use a known coating method such as spin coating, spray coating, doctor blade coating, and inkjet printing, and may be preferably performed by spin coating.

상기 전자 주개 물질은 태양광을 흡수하여 전자-정공쌍(엑시톤)을 형성하는 한편, 전자 주개 물질과 전자 받개 물질의 p-n 접합 계면에서 분리된 정공을 양극 방향으로 이동시키는 역할을 하는 물질을 의미한다.The electron donor material refers to a material that absorbs sunlight to form electron-hole pairs (excitons) and moves holes separated at the pn junction interface between the electron donor material and the electron acceptor material toward the anode. .

상기 전자 주개 물질은 p형 반도체로 사용 가능한 공액 고분자일 수 있으며, 폴리티오펜(polythiophene)계, 폴리플루오렌(polyfluorene)계, 폴리아닐린(polyaniline)계, 폴리카바졸(polycarbazole)계, 폴리비닐카바졸(polyvinylcarbazole)계, 폴리페닐렌(polyphenylene)계, 폴리페닐렌비닐렌(polyphenylenevinylene)계, 폴리실란(polysilane)계, 폴리티아졸(polythiazole)계 또는 이들의 공중합체일 수 있다. 예를 들어, 전자 주개 물질로는 PBDTTT-C-T, PTB7-Th, PBDTT-S-TT, PBDT-TS1, PBDTTT-C, PTB7 등이 있다.The electron donor material may be a conjugated polymer that can be used as a p-type semiconductor, polythiophene-based, polyfluorene-based, polyaniline-based, polycarbazole-based, polyvinylcarba It may be a sol (polyvinylcarbazole), polyphenylene (polyphenylene), polyphenylenevinylene (polyphenylenevinylene), polysilane (polysilane), polythiazole (polythiazole) or a copolymer thereof. For example, electron donor materials include PBDTTT-C-T, PTB7-Th, PBDTT-S-TT, PBDT-TS1, PBDTTT-C, and PTB7.

Figure PCTKR2016011865-appb-I000008
Figure PCTKR2016011865-appb-I000008

한편, 상기 전자 받개 물질은 광활성층 내 p-n 접합 계면에서 분리된 전자를 음극 방향으로 이동시키는 역할을 하는 물질을 의미한다. 예를 들어, 상기 전자 받개 물질은 n형 반도체로 사용 가능한 플러렌(fullerene) 및 PC61BM([6,6]-phenyl-C61-butyric acid methyl ester), PC71BM([6,6]-phenyl-C71-butyric acid methyl ester), PC81BM([6,6]-phenyl-C81-butyric acid methyl ester), ICBA(indene-C60 bisadduct)과 같은 플러렌 유도체 등일 수 있다.On the other hand, the electron acceptor material means a material that serves to move the electrons separated at the pn junction interface in the photoactive layer toward the cathode. For example, the electron acceptor material is fullerene and PC61BM ([6,6] -phenyl-C61-butyric acid methyl ester), PC 71 BM ([6,6] -phenyl- which can be used as an n-type semiconductor. C 71 -butyric acid methyl ester), PC81BM ([6,6] -phenyl-C81-butyric acid methyl ester), and fullerene derivatives such as ICBA (indene-C60 bisadduct).

상기 정공수집층은 상기 광활성층에서 생성된 정공이 양극으로 용이하게 전달되도록 하는 p-형 버퍼층으로서, 정공수송층으로 불리기도 한다.The hole collecting layer is a p-type buffer layer that allows the holes generated in the photoactive layer to be easily transferred to the anode, also called a hole transport layer.

본 발명에서, 상기 정공수집층은 전도성 금속 산화물, 폴리(3,4-에틸렌디옥시티오펜)[PEDOT]과 폴리(3-스티렌설포네이트)[PSS]의 배합유기물, 또는 이의 혼합물일 수 있다. 전도성 금속 산화물로는 WO3, V2O3 및 MoO3 등을 1종 이상 사용할 수 있다.In the present invention, the hole collecting layer may be a conductive metal oxide, a compounded organic of poly (3,4-ethylenedioxythiophene) [PEDOT] and poly (3-styrenesulfonate) [PSS], or a mixture thereof. As the conductive metal oxide, at least one of WO 3 , V 2 O 3 , MoO 3 , and the like may be used.

상기 제2 전극은 정공을 최종적으로 수집하여 외부 회로에 전달하는 양극의 역할을 하는 층으로서, 금속, 합금, 전도성 고분자 기타 전도성 화합물 및 이들의 조합물 중에서 선택되는 어느 하나일 수 있다. 다만, 제2전극은 대기 중 노출에 대한 산화 안정성이 큰 물질인 것이 바람직하며, 예를 들어, 금속인 경우 Cu, Ag, Au, W, Ni 및 Ti과 같이 일함수가 높은 물질을 사용하는 것이 바람직하다.The second electrode is a layer serving as an anode that finally collects holes and delivers the holes to an external circuit. The second electrode may be any one selected from metals, alloys, conductive polymers, other conductive compounds, and combinations thereof. However, the second electrode is preferably a material having a high oxidation stability against exposure to the atmosphere. For example, in the case of a metal, it is preferable to use a material having a high work function such as Cu, Ag, Au, W, Ni, and Ti. desirable.

일함수 저감층을 제외하고, 상기 각 층들은 열기상증착법, 전자빔증착법, 스퍼터링법, 이온도금법 또는 화학적 증착에 의해 형성할 수 있으며, 일함수 저감층은 전술한 바와 같이 용액 공정으로 형성할 수 있고, 상기 전극들은 금속을 포함한 전극 형성용 페이스트를 도포한 후 열처리하여 형성할 수 있다.Except for the work function reduction layer, each of the above layers may be formed by thermal image deposition, electron beam deposition, sputtering, ion plating or chemical vapor deposition, and the work function reduction layer may be formed by a solution process as described above. The electrodes may be formed by applying an electrode forming paste including a metal and then heat treatment.

본 발명은 역구조 유기 태양전지의 구성요소인 금속산화물 전자수집층의 표면을 중성 고분자를 이용하여 개질함으로써 금속산화물의 일함수를 낮추어 내부확산전위(built-in potential)을 증가시키고, 상기 중성 고분자에 의한 고분자 나노점 형성을 통해 전하의 이동/수집을 용이하게 함으로써, 고분자를 이용한 역구조 유기 태양전지의 효율이 크게 향상시킬 수 있다. 이로써 10% 이상의 고효율 유기태양전지 개발을 통해 고분자 태양전지의 상용화를 앞당길 것으로 예측되며, 휘고 몸에 착용 가능한 유기태양전지의 개발에 큰 역할을 할 것으로 기대된다.The present invention lowers the work function of the metal oxide by modifying the surface of the metal oxide electron collecting layer, which is a component of the inverse structure organic solar cell, using a neutral polymer, thereby increasing the built-in potential, and the neutral polymer. By facilitating the movement / collection of charges through the formation of polymer nano-dots, the efficiency of the inverse organic solar cell using the polymer can be greatly improved. As a result, it is expected to accelerate the commercialization of polymer solar cells by developing high efficiency organic solar cells of 10% or more, and is expected to play a big role in the development of organic solar cells that can be bent and worn on the body.

도 1은 본 발명에 따른 역구조 유기 태양전지의 모식도이다.1 is a schematic diagram of an inverse structure organic solar cell according to the present invention.

도 2는 본 발명에 따른 역구조 유기 태양전지의 에너지 구조를 도식화한 것이다.2 is a schematic diagram of an energy structure of an inverse organic solar cell according to the present invention.

도 3은 ZnO 표면에 대한 PEOz 농도 조절에 따른 각각의 표면에서의 UPS 측정 결과를 나타낸다.Figure 3 shows the results of the UPS measurement on each surface according to the PEOz concentration control on the ZnO surface.

도 4는 ZnO 표면에 대한 PEOz 농도 조절에 따른 각각의 표면에서의 EFM 측정 결과를 나타낸다.Figure 4 shows the results of the EFM measurement on each surface according to the PEOz concentration control on the ZnO surface.

도 5는 상기 UPS 및 EFM 측정 결과를 바탕으로 ZnO의 일함수가 낮아지는 것을 도식화한 모식도이다.FIG. 5 is a schematic diagram illustrating a lower work function of ZnO based on the results of UPS and EFM measurements.

도 6은 본 발명의 일 실시예에 따른 역구조 유기 태양전지의 적층 구조를 나타내는 모식도이다.6 is a schematic diagram showing a laminated structure of an inverse structure organic solar cell according to an embodiment of the present invention.

도 7은 본 발명의 일 실시예에 따른 역구조 유기 태양전지의 에너지 구조를 나타내는 모식도이다.7 is a schematic diagram showing the energy structure of an inverse structure organic solar cell according to an embodiment of the present invention.

도 8은 실시예 2에서 제작한 역구조 타입의 유기 태양전지에 대한 PEOz의 농도에 따른 소자의 전류밀도-전압 그래프이다.FIG. 8 is a current density-voltage graph of the device according to the concentration of PEOz for the organic solar cell of the inverse structure type fabricated in Example 2. FIG.

도 9는 실시예 2에서 제작한 역구조 타입의 유기 태양전지에 대한 PEOz의 농도에 따른 소자의 외부양자효율을 측정한 결과이다.9 is a result of measuring the external quantum efficiency of the device according to the concentration of PEOz for the organic solar cell of the reverse structure type prepared in Example 2.

도 10은 실시예 2에서 제작한 역구조 타입의 유기 태양전지에 대하여 PEOz의 농도에 따른 역구조 유기 태양전지의 다양한 지표의 성능을 분석한 결과이다.10 is a result of analyzing the performance of the various indicators of the reverse structure organic solar cell according to the concentration of PEOz for the reverse structure type organic solar cell prepared in Example 2.

도 11은 PEOz의 농도를 4 ㎎/㎖로 조절하여 ZnO 표면을 개질한 일함수 저감층, 즉 PEOz 층(ZnO/PEOz 4 ㎎/㎖)과 무처리된 ZnO 표면에 대한 AES 이미징 결과이다.FIG. 11 is an AES imaging result of a work function reduction layer, that is, a PEOz layer (ZnO / PEOz 4 mg / ml) and an untreated ZnO surface, by adjusting the concentration of PEOz to 4 mg / ml.

도 12는 상기 PEOz의 농도를 4 ㎎/㎖로 조절하여 ZnO 표면을 개질한 일함수 저감층, 즉 PEOz 층의 표면 모폴로지를 AFM로 분석한 결과이다.12 is a result of analyzing the surface morphology of the work function reduction layer, that is, the PEOz layer, by modifying the ZnO surface by adjusting the concentration of PEOz to 4 mg / ml.

도 13은 나노점 구조의 PEOz 층을 일함수 저감층으로 포함하는 본 발명에 따른 역구조 유기 태양전지의 모식도이다.FIG. 13 is a schematic view of an inverse structure organic solar cell according to the present invention including a PEOz layer having a nanopoint structure as a work function reduction layer.

이하, 실시예를 통하여 본 발명을 더욱 상세히 설명하고자 한다. 이들 실시예는 오로지 본 발명을 보다 구체적으로 설명하기 위한 것으로, 본 발명의 범위가 이들 실시예에 의해 제한되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples. These examples are only for illustrating the present invention more specifically, but the scope of the present invention is not limited by these examples.

실시예Example 1:  One: PEOz의PEOz 금속 산화물층에 대한  For metal oxide layers 일함수Work function 저감능Reduction 조사 Research

용매로서 메탄올을 사용하여 PEOz(무게평균분자량: 50000 Da, 다분산지수=3.5)의 농도 조절(두께 조절)(0, 1, 2, 4, 8 ㎎/㎖)을 통해서 ZnO 표면을 개질하고 UPS(ultraviolet photoelectron spectroscopy)를 하기와 같이 측정하였다. 이때 PEOz는 시그마-알드리치(미국)로부터 입수하여 추가 정제 없이 사용하였다.Methanol is used as a solvent to modify the ZnO surface through concentration control (thickness control) (0, 1, 2, 4, 8 mg / ml) of PEOz (weight average molecular weight: 50000 Da, polydispersity index = 3.5) (ultraviolet photoelectron spectroscopy) was measured as follows. PEOz was obtained from Sigma-Aldrich (USA) and used without further purification.

UPS는 He I (21.2 eV) UV 광원을 사용하여 1×10-9 mbar에서 초고도 진공(ultra-high vacuum, UHV) UPS 시스템(ESCALAB 250Xi, Thermo Scientific)을 이용하여 측정하였다. 모든 샘플에 -5 V로 바이어스를 걸었으며, UPS 스펙트럼의 에너지 스케일을 열증착되고 세정된(thermally-evaporated-cleaned) Ag 기판의 페르미 준위로 보정하였다. ZnO 층의 가전자대 에너지는 세정된 Ag 기준 전극으로 보정한 후 상응하는 UPS 스펙트럼의 낮은 결합 에너지 부분으로부터 7.7 eV로 얻어졌으며, ZnO 층의 전도대 에너지는 상기 가전자대 에너지로부터 이의 광학 밴드 갭(3.4 eV)을 차감시킴으로써 계산되었다. PEOz-코팅된 ZnO 층의 가전자대 최대값은 하기 식을 이용하여 계산되었다:The UPS was measured using an ultra-high vacuum (UHV) UPS system (ESCALAB 250Xi, Thermo Scientific) at 1 × 10 −9 mbar using a He I (21.2 eV) UV light source. All samples were biased at -5 V and the energy scale of the UPS spectrum was corrected to the Fermi level of the thermally-evaporated-cleaned Ag substrate. The valence band energy of the ZnO layer was obtained at 7.7 eV from the low binding energy portion of the corresponding UPS spectrum after calibration with the cleaned Ag reference electrode, and the conduction band energy of the ZnO layer was from the valence band energy (3.4 eV) Calculated by subtracting The valence band maximum of the PEOz-coated ZnO layer was calculated using the following equation:

EVBM = PIN - (ECF - EON) E VBM = P IN - (E CF - E ON)

상기 식에서, EVBM, PIN, ECF 및 EON은 각각 가전자대 최대값, 입사된 광자 에너지(21.2 eV), 컷오프 영역에서의 결합 에너지, 및 온셋 결합 에너지이다.Where E VBM , P IN , E CF and E ON are valence band maximum, incident photon energy (21.2 eV), binding energy in the cutoff region, and onset binding energy, respectively.

그 결과 도 3과 같이, Binding Energy가 이동하는 것을 확인할 수 있었다.As a result, as shown in Figure 3, it was confirmed that the binding energy moves.

또한, 용매로서 메탄올을 사용하여 PEOz의 농도 조절(두께 조절)(0, 4, 8 ㎎/㎖)을 통해서 ZnO 표면을 개질하고 EFM(electrostatic force microscopy)을 하기와 같이 측정하였다.In addition, ZnO surface was modified through the concentration control (thickness control) (0, 4, 8 mg / ml) of PEOz using methanol as a solvent, and the electrostatic force microscopy (EMF) was measured as follows.

EFM(XE-150, Park Systems)으로 일함수를 측정하고 고도로 정렬된 열분해 그라파이트(highly ordered pyrolytic graphite, HOPG)로 보정하였다.The work function was measured with EFM (XE-150, Park Systems) and calibrated with highly ordered pyrolytic graphite (HOPG).

그 결과 도 4와 같이, ZnO의 일함수(Work Function)가 낮아지는 것을 확인할 수 있다.As a result, as shown in Figure 4, it can be seen that the work function (Work Function) of ZnO is lowered.

상기 UPS 및 EFM 측정 결과를 바탕으로 ZnO의 일함수가 낮아지는 것을 도식화한 결과를 도 5에 나타내었다.Based on the results of the UPS and EFM measurement, it is shown in Figure 5 that the work function of ZnO is lowered.

실시예 2: PEOz를 이용한 역구조 유기 태양전지 제작Example 2: Fabrication of Inverse Structure Organic Solar Cell Using PEOz

PEOz 함유 일함수 저감용 코팅 용액을 사용하면서 도 6에서 도시된 바와 같은 적층 구조로 도 7에 도시된 바와 같은 에너지 구조를 갖는 역구조 타입의 유기 태양전지를 하기와 같이 제작하였다.An organic solar cell of an inverse structure type having an energy structure as shown in FIG. 7 in a laminated structure as shown in FIG. 6 while using a PEOz-containing work function reduction coating solution was manufactured as follows.

PTB7-Th(무게평균분자량 = 126000 Da, 다분산지수=2.5) 및 PC71BM(순도>99%)은 각각 1-머티리얼(1-Material, Canada) 및 나노-씨(Nano-C, United States)로부터 구입하였다. PEOz(무게평균분자량: 50000 Da, 다분산지수=3.5)는 시그마-알드리치(미국)로부터 입수하여 추가 정제 없이 사용하였다. 용매로서 메탄올을 사용하여 일함수 저감용 코팅 용액을 PEOz 농도(0, 1, 2, 4, 6, 8 ㎎/㎖)별로 제조하였다. 이원계 고분자:플러렌 용액은 20 mg/ml (PTB7-Th:PC71BM=1:1.5 중량부)의 고형물 농도로 1,8-디아이오도옥탄 (DIO) (CB:DIO=97:3 부피부)의 존재 하에 용매로서 클로로벤젠(CB)을 사용하여 제조하였으며, 스핀 코팅에 앞서 12시간 동안 상온에서 격렬하게 교반하였다. ZnO 전구체 용액은 징크 아세테이트 디하이드레이트 (Sigma-Aldrich, 1g) 및 에탄올아민 (Sigma-Aldrich, 0.28 g)을 2-메톡시에탄올 (Sigma-Aldrich, 10 mL) 중에 용해시키고 3시간 동안 60℃에서 교반한 다음 스핀 코팅 전에 12시간 동안 상온에서 교반하여 제조하였다.PTB7-Th (weight average molecular weight = 126000 Da, polydispersity index = 2.5) and PC71BM (purity> 99%) were obtained from 1-material (1-Material, Canada) and Nano-C (Nano-C, United States), respectively. Purchased. PEOz (weight average molecular weight: 50000 Da, polydispersity index = 3.5) was obtained from Sigma-Aldrich (USA) and used without further purification. Using methanol as a solvent, a coating solution for reducing work function was prepared for each PEOz concentration (0, 1, 2, 4, 6, 8 mg / ml). The binary polymer: fullerene solution is present in the presence of 1,8-dioodooctane (DIO) (CB: DIO = 97: 3 parts by volume) at a solid concentration of 20 mg / ml (PTB7-Th: PC71BM = 1: 1.5 parts by weight). It was prepared using chlorobenzene (CB) as a solvent under vigorous stirring at room temperature for 12 hours prior to spin coating. ZnO precursor solution was dissolved zinc acetate dihydrate (Sigma-Aldrich, 1g) and ethanolamine (Sigma-Aldrich, 0.28 g) in 2-methoxyethanol (Sigma-Aldrich, 10 mL) and stirred at 60 ° C. for 3 hours. Then it was prepared by stirring at room temperature for 12 hours before spin coating.

인듐-주석 산화물(ITO)-코팅된 유리 기판 (시트 저항 = 10 Ω/cm2)을 포토리소그래피/에칭 공정으로 패턴화하였다. 상기 미리 패턴화된 ITO-유리 기판을 초음파 세정기 내에서 아세톤 및 이소프로필 알코올을 이용하여 세정한 후, 흐르는 질소 하에서 건조시켰다. 건조된 ITO-유리 기판을 20분 동안 UV-오존 챔버 내부에서 처리하여 기판 표면 상의 임의의 잔여 유기 잔류물을 제거하고 ITO 표면을 친수성으로 만들었다. ZnO 전구체 용액을 상기 세정된 ITO-유리 기판 상에 스핀 코팅하고 얻어진 ITO/ZnO 샘플을 공기 중에서 1시간 동안 200℃로 어닐링시켰다. 이를 상온으로 냉각시킨 후, PEOz 용액을 ZnO 층의 표면 상에 스핀 코팅하고 120℃에서 15분 동안 어닐링시켰다. PEOz-코팅된 샘플을 광활성층 코팅을 위하여 질소 충진된 글로브 박스에 넣었다. PTB7-Th:PC71BM BHJ 층을 PEOz-코팅된 ZnO 층의 상부에 스핀 코팅하고 글로브 박스 내부에서 20분 동안 건조시켰다. 그 다음, 이들 샘플을 아르곤 충진된 글로브 박스 내 진공 챔버에 넣었다. 상기 진공 챔버 내에서 MoO3 (10 nm) 및 Ag (80 nm)를 2 × 10-6 Torr의 진공에서 쉐도우 마스크를 통해 상기 BHJ 층의 상부에 순차적으로 증착시켰다. 소자의 활성 면적은 0.05 cm2 또는 0.09 cm2이었다. Indium-tin oxide (ITO) -coated glass substrates (sheet resistance = 10 Ω / cm 2 ) were patterned by photolithography / etching process. The pre-patterned ITO-glass substrate was cleaned with acetone and isopropyl alcohol in an ultrasonic cleaner and then dried under running nitrogen. The dried ITO-glass substrate was treated for 20 minutes inside the UV-ozone chamber to remove any residual organic residue on the substrate surface and make the ITO surface hydrophilic. The ZnO precursor solution was spin coated onto the cleaned ITO-glass substrate and the resulting ITO / ZnO sample was annealed at 200 ° C. for 1 hour in air. After cooling to room temperature, the PEOz solution was spin coated onto the surface of the ZnO layer and annealed at 120 ° C. for 15 minutes. PEOz-coated samples were placed in a nitrogen filled glove box for photoactive layer coating. The PTB7-Th: PC 71 BM BHJ layer was spin coated on top of the PEOz-coated ZnO layer and dried for 20 minutes inside the glove box. These samples were then placed in a vacuum chamber in an argon filled glove box. In the vacuum chamber, MoO 3 (10 nm) and Ag (80 nm) were sequentially deposited on top of the BHJ layer through a shadow mask at a vacuum of 2 × 10 −6 Torr. The active area of the device was 0.05 cm 2 or 0.09 cm 2 .

실시예 3: 본 발명에 따른 역구조 유기 태양전지의 성능 분석Example 3 Performance Analysis of Inverse Structured Organic Solar Cells According to the Present Invention

상기 실시예 2에서 제작한 역구조 타입의 유기 태양전지에 대하여 PEOz의 농도에 따른 소자의 전류밀도-전압 그래프를 태양광 시뮬레이터(solar simulator, 92250A-1000, Newport-Oriel) 및 전위계(Model 2400, Keithley)가 장착된 태양전지 측정 시스템을 사용하여 측정하였다.For the inverse structure type organic solar cell fabricated in Example 2, the current density-voltage graph of the device according to the concentration of PEOz was calculated using a solar simulator (92250A-1000, Newport-Oriel) and an electrometer (Model 2400, Keithley's solar cell measurement system was used.

그 결과를 도 8에 나타내었다.The results are shown in FIG.

도 8을 통해, PEOz의 농도가 4 ㎎/㎖인 소자의 특성이 가장 좋은 것을 확인할 수 있다.8, it can be seen that the characteristics of the device having a concentration of PEOz of 4 mg / ml is the best.

또한, 상기 실시예 2에서 제작한 역구조 타입의 유기 태양전지에 대하여 PEOz의 농도에 따른 외부양자효율(external quantum efficiency, EQE)을 광원(Tungsten-Halogen lamp, 150 W, ASBN-W, Spectral Products) 및 단색광 분광기(CM110, Spectral Products)가 장착된 특수 EQE 측정 시스템을 이용하여 측정하였다.In addition, the external quantum efficiency (EQE) according to the concentration of PEOz for the inverse structure type organic solar cell manufactured in Example 2 is a light source (Tungsten-Halogen lamp, 150 W, ASBN-W, Spectral Products) And a special EQE measurement system equipped with a monochromatic spectrometer (CM110, Spectral Products).

그 결과를 도 9에 나타내었다.The results are shown in FIG.

도 9를 통해, 외부양자효율이 대부분의 가시광 영역에서 PEOz의 농도가 4 ㎎/㎖인 경우에 더욱 높은 것을 확인할 수 있다.9, it can be seen that the external quantum efficiency is higher when the concentration of PEOz is 4 mg / ml in most visible light regions.

이 밖에 상기 실시예 2에서 제작한 역구조 타입의 유기 태양전지에 대하여 PEOz의 농도에 따른 역구조 유기 태양전지의 성능을 하기와 같이 다양한 지표 측면에서 분석하고 그 결과를 하기 표 1 및 도 10에 나타내었다.In addition, the performance of the inverse structure organic solar cell according to the concentration of PEOz with respect to the organic structure of the inverse structure type organic solar cell prepared in Example 2 as described below in various indicators and the results are shown in Table 1 and FIG. Indicated.

Figure PCTKR2016011865-appb-T000001
Figure PCTKR2016011865-appb-T000001

상기 표 1 및 도 10의 결과를 통해, PEOz의 농도가 4 ㎎/㎖인 경우에 소자의 성능이 가장 우수함을 알 수 있다.The results of Table 1 and Figure 10, it can be seen that the performance of the device is the best when the concentration of PEOz is 4 mg / ㎖.

실시예 4: 본 발명에 따른 일함수 저감층 표면 분석Example 4 Work Function Reduction Layer Surface Analysis According to the Present Invention

용매로서 클로로벤젠을 사용하여 PEOz의 농도를 4 ㎎/㎖로 조절하여 유리기판/ITO 상의 ZnO 표면을 개질한 일함수 저감층, 즉 PEOz 층(ZnO/PEOz 4 ㎎/㎖)과 무처리된 ZnO 표면을 AES(Auger Electron Spectroscopy) 이미징으로 측정하였다.Using a chlorobenzene as a solvent, the concentration of PEOz was adjusted to 4 mg / ml, thereby modifying the ZnO surface on the glass substrate / ITO, that is, a PEOz layer (ZnO / PEOz 4 mg / ml) and untreated ZnO. Surfaces were measured by Auger Electron Spectroscopy (AES) imaging.

먼저, 유리기판/ITO/ZnO 층을 상기 실시예 2와 동일한 조건으로 적층하고, PEOz의 농도를 4 ㎎/㎖로 하여 상기 ZnO 표면을 개질하였다. 그 다음, AES 이미징을 측정하였다.First, a glass substrate / ITO / ZnO layer was laminated under the same conditions as in Example 2, and the surface of the ZnO was modified at a concentration of 4 mg / ml of PEOz. Then, AES imaging was measured.

그 결과를 도 11에 나타내었다.The results are shown in FIG.

도 11을 통해, PEOz 층이 나노점(nano-dot) 구조로 형성되어 있는 것을 확인할 수 있다.11, it can be seen that the PEOz layer is formed in a nano-dot structure.

또한, PEOz 층의 표면 모폴로지를 AFM(atomic force microscopy, Nanoscope IIIa, Digital Instruments)으로 측정하였다.In addition, the surface morphology of the PEOz layer was measured by AFM (atomic force microscopy, Nanoscope IIIa, Digital Instruments).

그 결과를 도 12에 나타내었다.The results are shown in FIG.

도 12의 결과에서 또한 PEOz 층이 나노점(nano-dot) 구조로 형성되어 있는 것을 확인할 수 있다.12 also shows that the PEOz layer is formed with a nano-dot structure.

따라서, 상기 결과들을 통해 ZnO 표면에 PEOz 층을 표면처리하는 경우, 나노점 구조에 의해 소자 효율이 크게 향상 되는 것을 확인할 수 있다.Therefore, when the surface treatment of the PEOz layer on the ZnO surface through the above results, it can be seen that the device efficiency is greatly improved by the nano-point structure.

이러한 나노점 구조의 PEOz 층을 일함수 저감층으로 포함하는 본 발명에 따른 역구조 유기 태양전지의 모식도를 도 13에 나타내었다.A schematic diagram of the inverse structure organic solar cell according to the present invention including the PEOz layer having the nanopoint structure as the work function reduction layer is illustrated in FIG. 13.

Claims (10)

하기 화학식 1로 표시되는 화합물을 포함하는 금속 산화물 전자수집층의 일함수 저감용 조성물:A composition for reducing the work function of a metal oxide electron collecting layer comprising a compound represented by Formula 1 below: [화학식 1][Formula 1]
Figure PCTKR2016011865-appb-I000009
Figure PCTKR2016011865-appb-I000009
상기 식에서, Where R은 C1-6 알킬, C2-6 알케닐, C2-6 알키닐 또는 C1-6 알콕시이고, R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy, n은 50 내지 10000의 정수이다.n is an integer of 50-10000.
제1항에 있어서, 상기 금속 산화물 전자수집층이 역구조 유기 태양전지에 사용되는 것이 특징인 조성물.The composition of claim 1, wherein the metal oxide electron collecting layer is used in an inverse structure organic solar cell. 제1항에 있어서, 상기 금속 산화물 전자수집층의 금속 산화물은 산화아연(ZnO), 산화티타늄(TiOx, 여기서 x는 1, 2 또는 3임), 산화인듐(In2O3), 산화주석(SnO2), 산화아연주석(Zinc Tin Oxide), 산화갈륨 (Ga2O3), 산화알루미늄, 산화구리(Copper(II) Oxide), 산화구리알루미늄(Copper Aluminium Oxide), 산화아연로듐 (Zinc Rhodium Oxide), IGZO (indium-Gallium Zinc Oxide) 또는 이의 혼합물인 것이 특징인 조성물.The method of claim 1, wherein the metal oxide of the metal oxide electron collecting layer is zinc oxide (ZnO), titanium oxide (TiO x , where x is 1, 2 or 3), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc tin oxide, gallium oxide (Ga 2 O 3 ), aluminum oxide, copper oxide (Copper (II) Oxide), copper aluminum oxide, zinc rhodium oxide (Zinc Rhodium Oxide), IGZO (indium-Gallium Zinc Oxide) or a mixture thereof. 기판상에 순차 적층된 제1 전극, 금속 산화물 전자수집층, 일함수 저감층, 광활성층, 정공수집층 및 제2 전극을 포함하고, 상기 일함수 저감층이 하기 화학식 1로 표시되는 화합물을 포함하는 것이 특징인 역구조 유기 태양전지:A first electrode, a metal oxide electron collecting layer, a work function reducing layer, a photoactive layer, a hole collecting layer and a second electrode sequentially stacked on a substrate, wherein the work function reducing layer comprises a compound represented by the following formula (1) Inverse structure organic solar cell characterized by: [화학식 1][Formula 1]
Figure PCTKR2016011865-appb-I000010
Figure PCTKR2016011865-appb-I000010
상기 식에서, Where R은 C1-6 알킬, C2-6 알케닐, C2-6 알키닐 또는 C1-6 알콕시이고, R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy, n은 50 내지 10000의 정수이다.n is an integer of 50-10000.
제4항에 있어서, 상기 금속 산화물 전자수집층의 금속 산화물은 산화아연(ZnO), 산화티타늄(TiOx, 여기서 x는 1, 2 또는 3임), 산화인듐(In2O3), 산화주석(SnO2), 산화아연주석(Zinc Tin Oxide), 산화갈륨 (Ga2O3), 산화알루미늄, 산화구리(Copper(II) Oxide), 산화구리알루미늄(Copper Aluminium Oxide), 산화아연로듐 (Zinc Rhodium Oxide), IGZO (indium-Gallium Zinc Oxide) 또는 이의 혼합물인 것이 특징인 역구조 유기 태양전지.The metal oxide of claim 4, wherein the metal oxide of the metal oxide electron collecting layer is zinc oxide (ZnO), titanium oxide (TiO x , where x is 1, 2 or 3), indium oxide (In 2 O 3 ), or tin oxide. (SnO 2 ), Zinc Tin Oxide, Gallium Oxide (Ga 2 O 3 ), Aluminum Oxide, Copper Oxide (Copper (II) Oxide), Copper Aluminum Oxide, Zinc Oxide Inverse structure organic solar cell, characterized in that Rhodium Oxide), IGZO (indium-Gallium Zinc Oxide) or a mixture thereof. 제4항에 있어서, 상기 일함수 저감층은 나노점(nano-dot) 구조로 형성되어 있는 것이 특징인 역구조 유기 태양전지.The inverse structure organic solar cell of claim 4, wherein the work function reduction layer is formed in a nano-dot structure. 제4항에 있어서, 상기 일함수 저감층은 상기 화학식 1로 표시되는 화합물의 농도가 1 내지 10 ㎎/㎖인 용액을 금속 산화물 전자수집층 상에 코팅하여 형성되는 것이 특징인 역구조 유기 태양전지.The inverse structure organic solar cell of claim 4, wherein the work function reduction layer is formed by coating a solution having a concentration of 1 to 10 mg / ml represented by Chemical Formula 1 on a metal oxide electron collecting layer. . 기판 상에 제1전극을 적층하는 제1단계;Stacking a first electrode on a substrate; 상기 제1전극 상에 금속 산화물 전자수집층을 적층하는 제2단계;Stacking a metal oxide electron collecting layer on the first electrode; 상기 금속 산화물 전자수집층 상에 하기 화학식 1로 표시되는 화합물을 포함하는 금속 산화물 전자수집층의 일함수 저감용 조성물을 코팅하여 일함수 저감층을 형성시키는 제3단계;A third step of forming a work function reduction layer by coating a work function reduction composition of the metal oxide electron collection layer including the compound represented by Formula 1 on the metal oxide electron collecting layer; 상기 일함수 저감층 상에 광활성층을 적층하는 제4단계;Stacking a photoactive layer on the work function reduction layer; 상기 광활성층 상에 정공수집층을 적층하는 제5단계; 및Stacking a hole collecting layer on the photoactive layer; And 상기 정공수집층 상에 제2전극을 적층하는 제6단계를 포함하는 역구조 유기 태양전지의 제조방법:Method of manufacturing an inverse structure organic solar cell comprising a sixth step of depositing a second electrode on the hole collection layer: [화학식 1][Formula 1]
Figure PCTKR2016011865-appb-I000011
Figure PCTKR2016011865-appb-I000011
상기 식에서, Where R은 C1-6 알킬, C2-6 알케닐, C2-6 알키닐 또는 C1-6 알콕시이고, R is C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl or C 1-6 alkoxy, n은 50 내지 10000의 정수이다.n is an integer of 50-10000.
제8항에 있어서, 제3단계에서 사용하는 일함수 저감용 조성물은 화학식 1로 표시되는 화합물의 농도가 1 내지 10 ㎎/㎖인 용액인 것이 특징인 방법.The method of claim 8, wherein the composition for reducing work function used in the third step is a solution having a concentration of 1 to 10 mg / ml of the compound represented by the formula (1). 제8항에 있어서, 제3단계에서 일함수 저감용 조성물의 코팅은 용액 공정을 통해 수행되는 것이 특징인 방법.The method of claim 8, wherein the coating of the work function reduction composition in the third step is carried out through a solution process.
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