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WO2017052243A1 - Composition de résine époxyde pour colmater un dispositif à semi-conducteurs et dispositif à semi-conducteurs colmaté à l'aide de cette dernière - Google Patents

Composition de résine époxyde pour colmater un dispositif à semi-conducteurs et dispositif à semi-conducteurs colmaté à l'aide de cette dernière Download PDF

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Publication number
WO2017052243A1
WO2017052243A1 PCT/KR2016/010606 KR2016010606W WO2017052243A1 WO 2017052243 A1 WO2017052243 A1 WO 2017052243A1 KR 2016010606 W KR2016010606 W KR 2016010606W WO 2017052243 A1 WO2017052243 A1 WO 2017052243A1
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Prior art keywords
epoxy resin
resin composition
sealing
formula
semiconductor device
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Ceased
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PCT/KR2016/010606
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English (en)
Korean (ko)
Inventor
엄태신
임수미
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
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Publication of WO2017052243A1 publication Critical patent/WO2017052243A1/fr
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2237—Oxides; Hydroxides of metals of titanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Definitions

  • the present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed using the same, and more particularly, sufficient visibility can be ensured even when laser marking of low power and low depth, and soot does not occur.
  • the method of sealing a semiconductor element with an epoxy resin composition is commercially performed for the purpose of protecting a semiconductor element from external environments, such as moisture or a mechanical shock.
  • the sealing material made of the epoxy resin composition is marked with the manufacturer, product name, manufacturing number, etc. to confirm the manufacturing information of the semiconductor device.
  • a method of using a marking ink such as an ultraviolet curable ink or the like for recording the product information has been mainly used.
  • the method using the marking ink as described above has a problem that the process time is long and expensive because the curing process and the cleaning process must be performed.
  • a method of recording the manufacturing information by etching the surface of the epoxy resin sealing material using a laser has been introduced.
  • carbon black is added as a colorant to the epoxy resin composition in order to increase visibility of product information.
  • marking using a laser the processing speed is fast, the marking is semi-permanent, and the cost is low.
  • heat generated during laser marking affects the chip, causing defects or sooting.
  • An object of the present invention is to provide an epoxy resin composition for semiconductor element sealing that can ensure sufficient visibility even at low power and low depth laser marking.
  • Another object of the present invention is to provide an epoxy resin composition for sealing a semiconductor device which can minimize the occurrence of soot during laser marking.
  • Still another object of the present invention is to provide a semiconductor device which is sealed by the above-mentioned epoxy resin composition for semiconductor element sealing and can ensure sufficient visibility even when a low depth marking portion is formed using a laser of low power.
  • the present invention includes an epoxy resin, a curing agent, a colorant including Ti n O 2n -1 , wherein n is an integer of 4 to 6, and an inorganic filler, and includes the total weight of the curing agent in the curing agent.
  • the epoxy resin composition for sealing semiconductor elements whose value divided by the number of aromatic groups thus obtained is about 70 or more.
  • the curing agent in the polyfunctional phenol resin comprising a phenol novolak-type phenol resin represented by the following [Formula 4], a xylolic phenol resin represented by [Formula 5] and a repeating unit represented by the following [Formula 6] It may include at least one.
  • Ti n O 2n - 1 included in the colorant may be included in about 0.5% by weight to about 5% by weight based on the total weight of the epoxy resin composition, preferably, may be Ti 4 O 7 .
  • the colorant may further include carbon black, wherein the carbon black is about 0.2 wt% or less, preferably about 0.001 wt% to about 0.2 wt%, based on the total weight of the epoxy resin composition. It is preferred to be included.
  • the epoxy resin composition according to the present invention comprises about 0.1% to about 15% by weight of epoxy resin, about 0.1% to about 13% by weight of curing agent, about 70% to about 95% by weight of inorganic filler, and about colorant 0.5 weight percent to about 5 weight percent.
  • the present invention provides a semiconductor device sealed with the epoxy resin composition described above.
  • the semiconductor device comprises a wiring board; A bump formed on the wiring board; A semiconductor chip mounted on the bumps; And a sealing layer sealing the semiconductor chip, wherein the sealing layer is formed of the epoxy resin composition according to the present invention.
  • a marking part for recording product information may be formed on a surface of the sealing layer, and the marking part may have a depth of about 30 ⁇ m or less, preferably about 1 ⁇ m to about 20 ⁇ m.
  • a distance between the outermost surface of the sealing layer and the semiconductor chip may be about 40 ⁇ m to about 300 ⁇ m.
  • the sealing layer of a semiconductor element using the epoxy resin composition which concerns on this invention, sufficient visibility can be ensured even if the depth of a marking part is formed shallow using the laser of low output. As a result, the semiconductor chip may be prevented from being damaged or burned out by laser heat during laser marking, and may be usefully applied to a thin semiconductor device having a thin thickness.
  • the epoxy resin composition of the present invention since carbon black having conductivity is not used or the amount of use thereof can be minimized, the effect of improving the electrical insulation of the resin can also be obtained.
  • FIG. 1 is a cross-sectional view of a semiconductor device in accordance with an embodiment of the present invention.
  • the first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may be a second component within the technical spirit of the present invention.
  • X-Y which shows a range means "X or more and Y or less.”
  • the epoxy resin composition for semiconductor element sealing of this invention contains an epoxy resin, a hardening
  • epoxy resins generally used for sealing semiconductor devices may be used, and are not particularly limited. Specifically, an epoxy compound containing two or more epoxy groups in the molecule can be used.
  • epoxy resins include epoxy resins obtained by epoxidizing condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, polyfunctional type epoxy resins, naphthol novolak type epoxys, etc.
  • Resins novolac epoxy resins of bisphenol A / bisphenol F / bisphenol AD, glycidyl ethers of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl epoxy resins, dicyclopentadiene epoxy resins, and the like.
  • the epoxy resin may include at least one of a cresol novolac epoxy resin, a polyfunctional epoxy resin, a phenol aralkyl type epoxy resin and a biphenyl type epoxy resin.
  • the multifunctional epoxy resin may be, for example, an epoxy resin represented by the following Chemical Formula 1.
  • R1, R2, R3, R4, and R5 are each independently a hydrogen atom or an alkyl group having 1 to 4 carbon atoms
  • R6 and R7 are each independently a hydrogen atom, a methyl group, or an ethyl group
  • a is 0 to 6 Is an integer.
  • R1, R2, R3, R4 and R5 are each independently hydrogen, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group or hexyl group
  • R6 and R7 may be hydrogen, but are not necessarily limited thereto.
  • the polyfunctional epoxy resin of the above [Formula 1] can reduce the deformation of the package, and has excellent advantages in fast curing, latentness and preservation, as well as excellent cured strength and adhesiveness.
  • the multifunctional epoxy resin composition may be a triphenol alkane type epoxy resin such as a triphenol methane type epoxy resin, a triphenol propane type epoxy resin, or the like.
  • the phenol aralkyl type epoxy resin may be, for example, a phenol aralkyl type epoxy resin having a novolak structure including a biphenyl derivative represented by the following Chemical Formula 2.
  • the phenol aralkyl type epoxy resin of [Formula 2] forms a structure having a biphenyl in the middle based on a phenol skeleton, and thus has excellent hygroscopicity, toughness, oxidative resistance and crack resistance, and has a low crosslinking density to burn at high temperatures. While forming a carbon layer (char) has the advantage that it can secure a certain level of flame resistance in itself.
  • the biphenyl type epoxy resin may be, for example, a biphenyl type epoxy resin represented by Formula 3 below.
  • R8, R9, R10, R11, R12, R13, R14 and R15 are each independently an alkyl group having 1 to 4 carbon atoms, the average value of c is 0 to 7.
  • the biphenyl type epoxy resin of the above [Formula 3] is preferable from the viewpoint of fluidity and reliability strengthening of the resin composition.
  • epoxy resins may be used alone or in combination, and are prepared by pre-reacting an epoxy resin with other components such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent in a manner such as a melt master batch. It can also be used in the form of a compound. On the other hand, in order to improve the moisture resistance reliability, it is preferable to use the epoxy resin that is low in chlorine ions, sodium ions, and other ionic impurities contained in the epoxy resin.
  • the epoxy resin is in an amount of about 0.1% to about 15% by weight, specifically about 0.1% to about 12% by weight, more specifically about 3% to about 12% by weight of the epoxy resin composition for sealing a semiconductor device. May be included.
  • the content of the epoxy resin satisfies the above range, it is possible to better implement the adhesive strength and strength of the epoxy resin composition after curing.
  • a value obtained by dividing the total weight of the curing agent by the number of aromatic groups contained in the curing agent is about 70 or more, preferably about 80 to about 110.
  • the total weight of the curing agent divided by the number of aromatic groups contained in the curing agent is about 70 or more, the generation of soot is markedly reduced during laser marking.
  • curing agent is 70 or more, and the kind is not specifically limited.
  • curing agents generally used for sealing semiconductor devices may be used without limitation, and preferably, curing agents having two or more reactors may be used.
  • a phenol novolak phenol resin, a xylok phenol resin, a cresol novolak phenol resin, a naphthol phenol resin, a terpene phenol resin, a polyfunctional phenol resin, and a dicyclopenta Diene-based phenolic resins novolac-type phenolic resins synthesized from bisphenol A and resol, polyhydric phenol compounds including tris (hydroxyphenyl) methane, dihydroxybiphenyl, acid anhydrides containing maleic anhydride and phthalic anhydride, meta Aromatic amines, such as phenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone, may be used, but are not limited thereto.
  • a polyfunctional type comprising a phenol novolak-type phenol resin represented by the following [Formula 4], a xylolic phenol resin represented by the Formula [5], and a repeating unit represented by the following [Formula 6]
  • Phenolic resin can be used individually or in mixture.
  • the total weight of the phenol resin mixture divided by the number of aromatic groups included in the phenol resin mixture should be about 70 or more, specifically about 80 to about 110. do.
  • curing agents may be used alone or in combination, and may also be used as an addition compound made by pre-reacting other components such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent in the same manner as in a melt master batch. .
  • the curing agent may be included in an amount of about 0.1 to about 13% by weight, preferably about 0.1 to about 10% by weight, more preferably about 0.1 to about 8% by weight of the epoxy resin composition for sealing a semiconductor device.
  • the content of the curing agent satisfies the above range, the curing degree of the epoxy resin composition and the strength of the cured product are excellent.
  • the blending ratio of the epoxy resin and the curing agent may be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package.
  • the chemical equivalent ratio of the epoxy resin to the curing agent may be about 0.95 to about 3, specifically about 1 to about 2, more specifically about 1 to about 1.75.
  • a coloring agent is for ensuring visibility at the time of laser marking of a semiconductor element sealing material.
  • the colorant includes Ti n O 2n ⁇ 1 , where n is an integer of 4 to 6.
  • carbon black has been mainly used as a colorant.
  • the output of the laser must be high in order to secure the sharpness of the marking part, and thus the depth of the marking part etched by the laser is 40. It was formed deep to the micrometer level.
  • the thickness of the sealing material becomes thinner and thinner according to the tendency of light and small size of the semiconductor device, when the marking part is deeply formed by using a high power laser, there is a problem that the semiconductor chip is easily damaged by the heat of the laser.
  • n O 2n ⁇ 1 (where n is an integer of 4 to 6) is used as the colorant, sufficient visibility can be ensured even if a shallow marking portion is formed by a laser of low power.
  • the epoxy resin composition of the present invention is used as a sealing material, clear visibility can be obtained even when the thickness of the marking portion is 30 ⁇ m or less, preferably 1 ⁇ m to 20 ⁇ m.
  • Ti n O 2n - 1 is Ti 4 O 7 , Ti 5 O 9 , Ti 6 O 11 Or combinations thereof, of which Ti 4 O 7 is particularly preferred.
  • the Ti n O 2n - 1 may be included in about 0.5% to about 5% by weight of the epoxy resin composition. In the above range, a clear marking portion can be formed without deteriorating the physical properties of the resin composition, and the generation of soot can be effectively suppressed during laser marking.
  • the colorant may be used by mixing carbon black with Ti n O 2n -1 .
  • the carbon black may be included in an epoxy resin composition of about 0.2% by weight or less, preferably about 0.001% by weight to about 0.2% by weight.
  • carbon black which is a coloring agent is contained in 0.3 weight% or more in the epoxy resin composition for semiconductor element sealing.
  • carbon black is conductive, when the carbon black content increases, insulation of the sealing material is inferior.
  • the present invention uses Ti n O 2n-1 as the colorant, so that the content of carbon black can be reduced, whereby the electrical insulation of the sealing layer can be further improved.
  • the colorant may be included in an amount of about 0.5 wt% to about 5 wt%, preferably about 1 wt% to about 5 wt%, in the epoxy resin composition for sealing a semiconductor device.
  • the inorganic filler is for improving the mechanical properties and low stress of the epoxy resin composition.
  • general inorganic fillers used in semiconductor sealing materials can be used without limitation, and are not particularly limited.
  • fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. may be used. Can be. These may be used alone or in combination.
  • molten silica having a low coefficient of linear expansion is used to reduce stress.
  • Fused silica refers to amorphous silica having a specific gravity of 2.3 or less, and also includes amorphous silica made by melting crystalline silica or synthesized from various raw materials.
  • the shape and particle diameter of the molten silica are not particularly limited, but about 1 to about spherical molten silica having a spherical molten silica having an average particle diameter of about 5 to about 30 ⁇ m and an average particle diameter of about 0.001 to about 1 ⁇ m.
  • the molten silica mixture including about 50% by weight, comprises from about 40% to about 100% by weight of the total filler.
  • the maximum particle diameter can be adjusted to any one of about 45 micrometers, about 55 micrometers, and about 75 micrometers, and can be used.
  • conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material containing less polar foreign matter.
  • the amount of the inorganic filler used depends on the required physical properties such as formability, low stress, and high temperature strength.
  • the inorganic filler may be included in about 70% to about 95% by weight, for example about 80% to about 90% or about 83% to about 97% by weight of the epoxy resin composition. Within this range, flame retardancy, fluidity and reliability of the epoxy resin composition can be ensured.
  • the epoxy resin composition for sealing semiconductor elements of the present invention may further include additives such as a curing accelerator, a coupling agent and the like.
  • a hardening accelerator is a substance which accelerates reaction of an epoxy resin and a hardening
  • a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole, a boron compound, etc. can be used, for example.
  • Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diaminomethyl ) Phenol and tri-2-ethylhexyl acid salt.
  • organometallic compound examples include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like.
  • Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphate And pin-1,4-benzoquinones adducts.
  • the imidazoles include 2-phenyl-4methylimidazole, 2-methylimidazole, # 2-phenylimidazole, # 2-aminoimidazole, 2-methyl-1-vinylimidazole, and 2-ethyl-4.
  • boron compound examples include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Roboranetriethylamine, tetrafluoroboraneamine, and the like.
  • 1, 5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN)
  • 1, 8- diazabicyclo [5.4. 0] undec-7-ene 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU
  • phenol novolak resin salts and the like.
  • an organophosphorus compound, a boron compound, an amine type, or an imidazole series hardening accelerator can be used individually or in mixture as said hardening accelerator.
  • the curing accelerator may also use an epoxy resin or an adduct made by preliminary reaction with a curing agent.
  • the amount of the curing accelerator in the present invention may be about 0.01% to about 2% by weight based on the total weight of the epoxy resin composition, specifically about 0.02% to about 1.5% by weight, more specifically about 0.05% to about It may be about 1% by weight. In the above range, there is an advantage that the curing of the epoxy resin composition is promoted and the degree of curing is also good.
  • the epoxy resin composition for semiconductor element sealing may further include a coupling agent.
  • the coupling agent may be a silane coupling agent.
  • the said silane coupling agent may react between an epoxy resin and an inorganic filler, and what is necessary is just to improve the interface strength of an epoxy resin and an inorganic filler, The kind is not specifically limited.
  • Specific examples of the silane coupling agent include epoxysilane, aminosilane, ureidosilane, mercaptosilane, and the like.
  • the coupling agents may be used alone or in combination.
  • the coupling agent is about 0.01% to about 5% by weight, preferably about 0.05% to about 3% by weight, more preferably about 0.1% to about 2% by weight based on the total weight of the epoxy resin composition. It may be included in the content of. In the above range, the strength of the cured epoxy resin composition is improved.
  • the epoxy resin composition of the present invention is selected from the group consisting of higher fatty acids in the range which does not impair the object of the present invention; Higher fatty acid metal salts; And release agents such as ester waxes and carnauba waxes; Stress relieving agents such as modified silicone oil, silicone powder, and silicone resin; Antioxidants such as Tetrakis [methylene-3- (3,5-di-tertbutyl-4-hydroxyphenyl) propionate] methane; And the like may be further added as necessary.
  • the above components are uniformly sufficiently mixed at a predetermined ratio using a Henschel mixer or Lodige mixer, and then roll-mill or kneader. After melt kneading with a kneader, cooling and grinding may be performed to obtain a final powder product.
  • the epoxy resin composition of the present invention as described above may be used for sealing semiconductor devices, and may be particularly useful for manufacturing thin semiconductor devices.
  • the semiconductor element of this invention is sealed by the epoxy resin composition which concerns on this invention mentioned above.
  • the semiconductor element of the present invention includes a wiring board; A bump formed on the wiring board; A semiconductor chip mounted on the bumps; And a sealing layer for sealing the semiconductor chip, wherein the sealing layer is formed by the epoxy resin composition according to the present invention.
  • FIG. 1 illustrates an embodiment of a semiconductor device according to the present invention.
  • the semiconductor device according to the present invention includes a wiring board 10, a bump 30, a semiconductor chip 20, and a sealing layer 40.
  • the wiring board 10 is for imparting an electrical signal to a semiconductor chip, and has an insulating material, for example, a thermosetting film such as an epoxy resin or a polyimide, and a heat resistant organic film such as a liquid crystal polyester film or a polyamide film. It may consist of an attached flat plate.
  • a circuit pattern (not shown) is formed on the wiring board 10, and the circuit pattern includes a power wire for supplying power, a ground wire, a signal wire for signal transmission, and the like. Each of the wires may be separated from each other by an interlayer insulating layer.
  • the wiring board 10 may be a printed circuit board (PCB) in which a circuit pattern is formed by a printing process.
  • PCB printed circuit board
  • a bump 30 may be formed on the wiring board 10 to stably connect the semiconductor chip 20 to the wiring board 10, and the semiconductor chip 20 may be connected to the wiring board 10 through the bump 30. It is mounted in 10).
  • the sealing layer 40 may be formed such that the distance L between the outermost surface of the sealing layer and the semiconductor chip 20 is about 40 ⁇ m to about 300 ⁇ m.
  • the distance L between the sealing layer 40 and the semiconductor chip 20 satisfies the above range, there is an advantage in that the entire thickness of the semiconductor device can be formed thin.
  • the sealing layer 40 is formed by the epoxy resin composition according to the present invention described above.
  • a clear marking part may be obtained by a low power laser marking, and the damage of the semiconductor chip and the generation of soot by the laser may be minimized. Since the epoxy resin composition for semiconductor sealing which concerns on this invention was mentioned above, the specific description is abbreviate
  • a marking unit 50 for recording product information may be formed on the surface of the sealing layer 40.
  • the marking part 50 may be formed by etching the surface of the sealing layer 40 using a laser, and includes information such as a manufacturer, a product name, a manufacturing number, and the like.
  • a low power laser such as a YAG laser may be used as the laser device.
  • the marking portion 50 may have a depth d of about 30 ⁇ m or less, preferably about 1 ⁇ m to about 20 ⁇ m. At this time, when the depth of the marking portion satisfies the numerical range, it is possible to minimize the occurrence of damage to the semiconductor chip and soot caused by the laser.
  • a low pressure transfer molding method may be most commonly used. However, it can also be molded by an injection molding method or a casting method.
  • a semiconductor device of a copper lead frame, an iron lead frame, or a lead frame pre-plated with at least one material selected from the group consisting of palladium with nickel and copper on the lead frame, or an organic laminate frame can be manufactured. Can be.
  • Inorganic filler A 9: 1 (weight ratio) mixture of spherical molten silica having an average particle diameter of 20 ⁇ m and spherical molten silica having an average particle diameter of 0.5 ⁇ m was used.
  • TPP triphenylphosphine, Hokko Chemical
  • the components were weighed according to the composition (unit: parts by weight) of Table 1 below, and then uniformly mixed using a Henschel mixer to prepare a primary composition in powder form. After the melt kneading at 95 °C using a continuous kneader after cooling and pulverizing to prepare an epoxy resin composition for sealing a semiconductor device.
  • the visibility and depth of the marking portion were measured according to the following method.
  • the yag laser mark used for marking was Iotech's pulsed laser. The measurement results are shown in the following [Table 2].

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)

Abstract

La présente invention concerne : une composition de résine époxy pour colmater un dispositif semi-conducteur, la composition contenant une résine époxy, un agent de durcissement, une charge inorganique, et un colorant contenant TinO2n-1 (ici, n est un nombre entier de 4 à 6), le poids total de l'agent de durcissement divisé par le nombre de groupes aromatiques contenus dans l'agent de durcissement étant de 70 ou plus ; et un dispositif à semi-conducteurs colmaté à l'aide de celle-ci.
PCT/KR2016/010606 2015-09-24 2016-09-23 Composition de résine époxyde pour colmater un dispositif à semi-conducteurs et dispositif à semi-conducteurs colmaté à l'aide de cette dernière Ceased WO2017052243A1 (fr)

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KR1020150135932A KR20170036975A (ko) 2015-09-24 2015-09-24 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자
KR10-2015-0135932 2015-09-24

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WO2017052243A1 true WO2017052243A1 (fr) 2017-03-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023202833A1 (de) 2023-03-28 2024-10-02 Infineon Technologies Ag Gehäuse mit Verkapselungsmittel und weiterem Verkapselungsmittel darauf

Citations (5)

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Publication number Priority date Publication date Assignee Title
KR20000009057A (ko) * 1998-07-21 2000-02-15 유현식 마킹특성이 우수한 반도체 소자 봉지재용 에폭시수지 조성물
JP2005054045A (ja) * 2003-08-04 2005-03-03 Hitachi Chem Co Ltd 封止用エポキシ樹脂成形材料及び電子部品装置
JP2006278959A (ja) * 2005-03-30 2006-10-12 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂組成物及び半導体装置
KR20140082527A (ko) * 2012-12-24 2014-07-02 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 사용하여 밀봉된 반도체 소자
JP2014152302A (ja) * 2013-02-13 2014-08-25 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂組成物、半導体装置の製造方法及び半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000009057A (ko) * 1998-07-21 2000-02-15 유현식 마킹특성이 우수한 반도체 소자 봉지재용 에폭시수지 조성물
JP2005054045A (ja) * 2003-08-04 2005-03-03 Hitachi Chem Co Ltd 封止用エポキシ樹脂成形材料及び電子部品装置
JP2006278959A (ja) * 2005-03-30 2006-10-12 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂組成物及び半導体装置
KR20140082527A (ko) * 2012-12-24 2014-07-02 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 사용하여 밀봉된 반도체 소자
JP2014152302A (ja) * 2013-02-13 2014-08-25 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂組成物、半導体装置の製造方法及び半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023202833A1 (de) 2023-03-28 2024-10-02 Infineon Technologies Ag Gehäuse mit Verkapselungsmittel und weiterem Verkapselungsmittel darauf

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