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WO2016194620A1 - Dispositif d'imagerie à semi-conducteur et dispositif électronique - Google Patents

Dispositif d'imagerie à semi-conducteur et dispositif électronique Download PDF

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Publication number
WO2016194620A1
WO2016194620A1 PCT/JP2016/064830 JP2016064830W WO2016194620A1 WO 2016194620 A1 WO2016194620 A1 WO 2016194620A1 JP 2016064830 W JP2016064830 W JP 2016064830W WO 2016194620 A1 WO2016194620 A1 WO 2016194620A1
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Prior art keywords
solid
pixels
imaging device
phase difference
state imaging
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English (en)
Japanese (ja)
Inventor
泰一郎 渡部
史彦 古閑
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B13/00—Viewfinders; Focusing aids for cameras; Means for focusing for cameras; Autofocus systems for cameras
    • G03B13/32—Means for focusing
    • G03B13/34—Power focusing
    • G03B13/36—Autofocus systems
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

Definitions

  • the present disclosure relates to a solid-state imaging device and an electronic device, and more particularly, to a solid-state imaging device and an electronic device that improve the accuracy of focus detection.
  • Solid-state imaging device having a photoelectric conversion film outside Si and having a pixel for detecting a phase difference.
  • Patent Document 1 describes a solid-state imaging device that detects a phase difference by dividing a light shielding film on an organic photoelectric conversion film.
  • Patent Document 2 describes that a sensor for detecting a phase difference is provided below the organic film.
  • Patent Document 2 since there is a material that absorbs light of a certain wavelength on the light incident side from Si of the phase difference detection pixel, the amount of light incident on the Si PD is reduced, and the focus detection accuracy is improved. It had fallen. In addition, the technique of Patent Document 2 has been difficult to apply to a stacked sensor.
  • the present disclosure has been made in view of such a situation, and can improve the accuracy of focus detection.
  • a solid-state imaging device includes a substrate on which a photoelectric conversion unit is formed, and an imaging region including a plurality of pixels arranged two-dimensionally on the substrate, and the plurality of pixels include: An imaging pixel using an organic photoelectric conversion film that absorbs light of a certain wavelength band formed between the substrate and the light incident side, and the organic photoelectric formed between the substrate and the light incident side. It is composed of a pair of pixels including a phase difference detection pixel from which the film change is removed.
  • the phase difference detection pixel may have a light shielding film that covers a substantially half region of the pixel between the substrate and the light incident side.
  • the phase difference detection pixel may have a transparent film at a position corresponding to the position where the organic photoelectric conversion film is removed.
  • the transparent film is made of a material having a high light transmittance in the visible light region.
  • the transparent film is made of a material that absorbs little light.
  • the transparent film is made of a material having low moisture and gas permeability.
  • the transparent film is made of a material having high flatness.
  • the phase difference detection pixel may have at least one of an upper electrode and a lower electrode.
  • the phase difference detection pixel in the pair of pixels is arranged adjacent to the phase difference detection pixel in the other pair of pixels.
  • phase difference detection pixels in the pair of pixels are arranged at positions adjacent to the left and right of the phase difference detection pixels in the other pair of pixels.
  • phase difference detection pixels in the pair of pixels are arranged at adjacent positions above and below the phase difference detection pixels in the other pair of pixels.
  • phase difference detection pixels in the pair of pixels are arranged at obliquely adjacent positions to the phase difference detection pixels in the other pair of pixels.
  • the organic photoelectric conversion film can absorb green light.
  • a plurality of the photoelectric conversion units in at least one of the imaging pixels and the phase difference detection pixels are stacked in the depth direction.
  • An electronic apparatus includes a substrate on which a photoelectric conversion unit is formed, and an imaging region including a plurality of pixels arranged in a two-dimensional manner on the substrate, An imaging pixel using an organic photoelectric conversion film that absorbs light in a certain wavelength band formed between a substrate and a light incident side, and the organic photoelectric conversion formed between the substrate and the light incident side
  • a solid-state imaging device including a pair of pixels including a phase difference detection pixel from which a film is removed, a signal processing circuit that processes an output signal output from the solid-state imaging device, and incident light to the solid-state imaging device And an optical system incident on the optical system.
  • a plurality of pixels in an imaging region including a plurality of pixels arranged two-dimensionally on a substrate on which a photoelectric conversion unit is formed are formed between the substrate and the light incident side.
  • the accuracy of focus detection can be improved. According to the present technology, it is possible to further improve the accuracy of focus detection.
  • It is process drawing explaining an example of a manufacturing process. 12 is a flowchart for explaining another example of the manufacturing process of the solid-state imaging device according to the present technology. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is a top view which shows the upper surface layout of the solid-state imaging device of this technique. It is a top view which shows the upper surface layout of the solid-state imaging device of this technique. It is a figure explaining the upper surface layout of the solid-state imaging device of this art. It is a figure explaining the upper surface layout of a solid-state imaging device. It is a figure which shows the usage example of an image sensor. It is a block diagram which shows the structural example of the electronic device to which this technique is applied.
  • First embodiment example of solid-state imaging device
  • Second embodiment use example of image sensor
  • Third embodiment an example of an electronic device
  • FIG. 1 illustrates a schematic configuration example of an example of a complementary metal oxide semiconductor (CMOS) solid-state imaging device applied to each embodiment of the present technology.
  • CMOS complementary metal oxide semiconductor
  • pixels 2 including a plurality of photoelectric conversion elements (Si PD) are regularly and two-dimensionally arranged on a semiconductor substrate 11 (for example, a silicon substrate).
  • the pixel area (so-called imaging area) 3 and a peripheral circuit section are included.
  • the pixel 2 includes a photoelectric conversion element (for example, a photodiode) and a plurality of pixel transistors (so-called MOS transistors).
  • the plurality of pixel transistors can be constituted by three transistors, for example, a transfer transistor, a reset transistor, and an amplifying transistor, and can further be constituted by four transistors by adding a selection transistor. Since the equivalent circuit of each pixel 2 (unit pixel) is the same as a general one, detailed description thereof is omitted here.
  • the pixel 2 can have a shared pixel structure.
  • the pixel sharing structure includes a plurality of photodiodes, a plurality of transfer transistors, one shared floating diffusion, and one other pixel transistor that is shared.
  • the peripheral circuit section includes a vertical drive circuit 4, a column signal processing circuit 5, a horizontal drive circuit 6, an output circuit 7, and a control circuit 8.
  • the control circuit 8 receives data for instructing an input clock, an operation mode, and the like, and outputs data such as internal information of the solid-state imaging device 1. Specifically, the control circuit 8 is based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, and the clock signal or the reference signal for the operations of the vertical drive circuit 4, the column signal processing circuit 5, and the horizontal drive circuit 6 Generate a control signal. The control circuit 8 inputs these signals to the vertical drive circuit 4, the column signal processing circuit 5, and the horizontal drive circuit 6.
  • the vertical drive circuit 4 is composed of, for example, a shift register, selects a pixel drive wiring, supplies a pulse for driving the pixel 2 to the selected pixel drive wiring, and drives the pixels 2 in units of rows. Specifically, the vertical drive circuit 4 selectively scans each pixel 2 in the pixel region 3 sequentially in the vertical direction in units of rows, and generates the signal according to the amount of light received by the photoelectric conversion element of each pixel 2 through the vertical signal line 9. A pixel signal based on the signal charge is supplied to the column signal processing circuit 5.
  • the column signal processing circuit 5 is disposed, for example, for each column of the pixels 2 and performs signal processing such as noise removal on the signal output from the pixels 2 for one row for each pixel column. Specifically, the column signal processing circuit 5 performs signal processing such as CDS (Correlated Double Sampling) for removing fixed pattern noise specific to the pixel 2, signal amplification, A / D (Analog / Digital) conversion, and the like. .
  • a horizontal selection switch (not shown) is provided connected to the horizontal signal line 10.
  • the horizontal drive circuit 6 is constituted by, for example, a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 5 in order, and the pixel signal is output from each of the column signal processing circuits 5 to the horizontal signal line. 10 to output.
  • the output circuit 7 performs signal processing on the signals sequentially supplied from each of the column signal processing circuits 5 through the horizontal signal line 10 and outputs the signals.
  • the output circuit 7 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like.
  • the input / output terminal 12 is provided for exchanging signals with the outside.
  • FIG. 2 is a cross-sectional view illustrating a structure example of a solid-state imaging device to which the present technology is applied.
  • the solid-state imaging device in the example of FIG. 2 is configured by a stacked CIS (CMOS Image Sensor).
  • An example in which 22 are installed adjacent to each other is shown.
  • an interlayer film 33 is formed on the semiconductor substrate 31 on which the Si PD 32 is formed.
  • a light shielding film 34 is provided at a boundary portion between adjacent pixels in order to shield light from the lens of the adjacent pixel.
  • a lower electrode 36, an organic photoelectric conversion film 37, and an upper electrode 38 are provided in this order from the bottom.
  • an interlayer film 33 is formed on the semiconductor substrate 31 on which the Si PD 32 is formed.
  • the interlayer film 33 is provided with a light shielding film 35 for shielding about half of the phase difference detection pixel 22, and further, a light incident side (interlayer film) outside the semiconductor substrate 31. 33) is not provided with an organic photoelectric conversion film.
  • the organic photoelectric conversion film is actually removed on the light incident side (on the interlayer film 33).
  • green light from the light incident side is absorbed by the organic photoelectric conversion film 37, and blue and red lights other than green mainly pass through the organic photoelectric conversion film 37, and Si PD 32. Is incident on.
  • the organic photoelectric conversion film is not provided in the phase difference detection pixel 22, all the green, blue, and red light from the light incident side is incident on the Si PD 32. As a result, the Si PD 32 can receive more light than the imaging pixel 21, so that the phase difference detection accuracy can be improved.
  • a transparent film such as a transparent organic material may be embedded.
  • the structure above the upper electrode is also omitted, but in actuality, a passivation film such as SIN or an on-chip lens may be provided on the upper electrode.
  • FIG. 3 to 8 are cross-sectional views showing other structural examples of the solid-state imaging device.
  • FIG. 3 is a diagram illustrating a structural example in which the shape of the lower electrode of the phase difference detection pixel is the same as that of the imaging pixel.
  • the structure of the imaging pixel 21 is formed in the same manner as in the example of FIG. 2. Mainly, green light from the light incident side is absorbed by the organic photoelectric conversion film 37, and In addition, Blue and Red light other than Green passes through the organic photoelectric conversion film 37 and enters the Si PD 32.
  • the lower electrode 41 has the same shape as the lower electrode 36 of the imaging pixel 21 on the interlayer film 33 provided with the light shielding film 35 for shielding half of the phase difference detection pixel 22. Is provided.
  • phase difference detection pixel 22 of FIG. 3 since the organic photoelectric conversion film is not provided on the lower electrode 36, all the green, blue, and red light from the light incident side is incident on the Si PD 32. The As a result, the Si32PD 32 of the phase difference detection pixel 22 can receive more light than the imaging pixel 21, so that the phase difference detection accuracy can be improved.
  • FIG. 4 is a diagram illustrating a structure example in which two or more Si-PDs are stacked in the depth direction in the imaging pixel.
  • the imaging pixel shown in FIG. 2 is that the Si PD 32 provided on the semiconductor substrate 31 is replaced with two Si PDs 51 and Si PDs 52 stacked in the depth direction. 21 is different. Therefore, in the imaging pixel 21, green light mainly from the light incident side is absorbed by the organic photoelectric conversion film 37, and blue and red light other than green mainly pass through the organic photoelectric conversion film 37. Then, the light enters the upper Si PD 52. Then, in the upper Si PD 52, mainly Blue light is absorbed, and most of the Red light is incident on the lower Si PD 51.
  • the structure of the phase difference detection pixel 22 is formed in the same manner as in the example of FIG. 2, and the organic photoelectric conversion film is not provided on the light incident side (on the interlayer film 33) outside the semiconductor substrate 31.
  • Si-PD is not limited to two layers, but may be three layers.
  • FIG. 5 is a diagram showing a structure example in which two or more Si-PDs are stacked in the depth direction in the imaging pixel and the phase difference detection pixel.
  • the structure of the imaging pixel 21 is formed in the same manner as in the example of FIG. 4.
  • green light mainly from the light incident side is converted into an organic photoelectric conversion film.
  • the blue and red light other than green is absorbed mainly by the light through the organic photoelectric conversion film 37 and incident on the upper Si PD 52.
  • the upper Si PD 52 mainly Blue light is absorbed, and most of the Red light is incident on the lower Si PD 51.
  • the point that the Si PD 32 provided on the semiconductor substrate 31 is replaced with two Si PD 61 and Si PD 62 that are stacked in the depth direction is the same as that of the imaging pixel 21 in FIG. 4. Is different. Therefore, one of Green, Blue, and Red light from the light incident side is incident on the Si PD 61, and one is incident on the Si PD 62.
  • FIG. 6 is a diagram showing a structural example in which a transparent film and an upper electrode are provided on an interlayer film in a phase difference detection pixel.
  • the structure of the imaging pixel 21 is formed similarly to the example of FIG. 2, and green light mainly from the light incident side is absorbed by the organic photoelectric conversion film 37 and mainly. Blue and Red lights other than Green pass through the organic photoelectric conversion film 37 and enter the Si PD 32.
  • phase difference detection pixel 22 a transparent material made of a transparent material having a high light transmittance in the visible light region is provided on the interlayer film 33 provided with the light shielding film 35 for shielding half of the phase difference detection pixel 22.
  • a film 72 is disposed, and an upper electrode 71 is disposed on the transparent film 72.
  • the upper electrode 71 can be formed simultaneously with the upper electrode 38 of the imaging pixel 21.
  • the organic photoelectric conversion film is not disposed, but the transparent material and the upper electrode are formed. In this case, it is not necessary to process the upper electrode of the phase difference detection pixel portion, and the process construction is facilitated.
  • FIG. 7 is a diagram showing a structural example in which a lower electrode and a transparent film are provided on an interlayer film in a phase difference detection pixel.
  • the structure of the imaging pixel 21 is formed in the same manner as in the example of FIG. 2. Mainly, green light from the light incident side is absorbed by the organic photoelectric conversion film 37 and mainly. Blue and Red light other than Green passes through the organic photoelectric conversion film 37 and enters the organic photoelectric conversion film 37.
  • the lower electrode 41 has the same shape as the lower electrode 36 of the imaging pixel 21 on the interlayer film 33 provided with the light shielding film 35 for shielding half of the phase difference detection pixel 22. Is provided.
  • a transparent film 72 is disposed on the lower electrode 36.
  • FIG. 8 is a diagram showing a structural example in which a lower electrode, a transparent film, and an upper electrode are provided on an interlayer film in a phase difference detection pixel.
  • the structure of the imaging pixel 21 is formed in the same manner as in the example of FIG. 2. Mainly, green light from the light incident side is absorbed by the organic photoelectric conversion film 37 and mainly. Blue and Red lights other than Green pass through the organic photoelectric conversion film 37 and enter the Si PD 32.
  • the lower electrode 41 has the same shape as the lower electrode 36 of the imaging pixel 21 on the interlayer film 33 provided with the light shielding film 35 for shielding half of the phase difference detection pixel 22. Is provided.
  • a transparent film 72 is provided on the lower electrode 36, and an upper electrode 71 formed simultaneously with the upper electrode 38 of the imaging pixel 21 is disposed on the transparent film 72.
  • Si PD instead of Si PD, two types of Si PD shown in FIG. 4 or 5 may be vertically stacked.
  • the organic photoelectric conversion film is not arranged in the phase difference detection pixel, that is, it is removed, so that the light in the wavelength band absorbed by the organic photoelectric conversion film is taken into the photodiode (Si PD),
  • the sensitivity of the phase difference detection pixel can be improved.
  • the material embedded as the transparent film 72 in the photoelectric conversion film removal region is, for example, a silicon nitride film, but other materials may be used.
  • a film that absorbs as little light as possible For example, it is desirable to use a transparent film such as a silicon oxide film.
  • an organic film when used as a photoelectric conversion film, it is necessary to prevent changes in film characteristics due to intrusion of moisture and gas (oxygen) from the processed end after etching the film. It is preferable to use a film having low properties, such as a silicon nitride film or alumina.
  • a coating film having high flatness on the device surface after formation is used.
  • an organic material film or silica that can be formed by coating can be used.
  • planarization method a method in which the region where the photoelectric conversion film is removed is embedded with an insulating film and the entire surface of the device is planarized by CMP or etching is considered.
  • CMP for example, scratching is performed after CMP. It is possible to use a silicon oxide film with less generation as a buried film.
  • Si PD 51-1 and Si PD 52-1 are used for the imaging pixel 21-1, and Si61PD 61-1 and the phase difference detection pixel 22-1 are used.
  • Si PD 62-1 is embedded, and Si PD 51-2 and Si PD 52-2 are used for imaging pixel 21-2, and Si PD 61-2 and Si PD 62-2 are used for phase difference detection pixel 22-2.
  • An embedded semiconductor substrate 31 is prepared. On the semiconductor substrate 31, there is provided an interlayer film 33 on which a light shielding film 35-1 for the phase difference detection pixel 22-1 and a light shielding film 35-2 for the phase difference detection pixel 22-2 are formed. A lower electrode 36 is formed thereon.
  • step S ⁇ b> 11 the manufacturing apparatus deposits the organic photoelectric conversion film 37 and the upper electrode material to be the upper electrode 38 on the lower electrode 36.
  • step S12 the manufacturing apparatus removes the organic photoelectric conversion film 37 and the upper electrode 38 of the phase difference detection pixels 22-1 and 22-2 as shown in FIG.
  • step S13 although the phase difference detection pixels 22-1 and 22-2 are removed in the manufacturing apparatus, as shown in FIG. 12, for example, a silicon nitride film or the like is formed on the organic photoelectric conversion film 37. An interlayer film 111 is formed.
  • step S14 as shown in FIG. 13, the manufacturing apparatus applies and planarizes a resist 112 on the interlayer film 111 formed in step S13.
  • step S15 the manufacturing apparatus etches back the resist 112 applied in step S14 as shown in FIG.
  • CMP is performed on the silicon nitride film that is the interlayer film 111
  • scratches are likely to occur, which may cause image defects such as swirl.
  • planarization can be performed without generation of scratches by performing planarization by the etch-back method.
  • step S16 as shown in FIG. 15, the manufacturing apparatus forms an on-chip lens 113 on the interlayer film 111 planarized in step S14.
  • the solid-state imaging device 1 is manufactured as described above.
  • step S14 described above may be skipped, the interlayer film 111 may be CMPed in step S15, and the on-chip lens 113 may be formed in step S16.
  • Steps S31 and S32 are the same processing as steps S11 and S12 of FIG.
  • step S33 the manufacturing apparatus removes the phase difference detection pixels 22-1 and 22-2. As shown in FIG. 17, for example, a photosensitive material resin 131 is applied on the organic photoelectric conversion film 37. Apply.
  • step S34 the manufacturing apparatus exposes and removes the photosensitive resin 131 other than the predetermined area (imaging pixels) as shown in FIG.
  • step S35 the manufacturing apparatus applies a resist 132 to the entire surface as shown in FIG.
  • step S36 the manufacturing apparatus etches back.
  • the protruding portion of the photosensitive resin 131 may be polished by CMP.
  • step S37 the manufacturing apparatus forms an interlayer film 133 as shown in FIG. 21, and forms an on-chip lens 113 on the formed interlayer film 133.
  • the solid-state imaging device 1 is manufactured as described above.
  • steps S35 and S36 described above are skipped, and in step S37, an interlayer film 133 is formed, and the on-chip lens 113 is formed on the formed interlayer film 133. You may do it.
  • step S51 the manufacturing apparatus deposits the organic photoelectric conversion film 37 on the lower electrode.
  • step S52 the manufacturing apparatus removes the organic photoelectric conversion film 37 of the phase difference detection pixels 22-1 and 22-2 as shown in FIG.
  • a method in which a photosensitive material is mixed in the photoelectric conversion film and removed by exposure, or a method in which a predetermined region is removed by lithography and etching is used.
  • step S53 the manufacturing apparatus applies the photosensitive resin 141 as shown in FIG.
  • a photosensitive material is mixed into the organic photoelectric conversion film 37 in order to be removed by exposure.
  • step S54 the manufacturing apparatus exposes and removes the photosensitive resin 141 other than the predetermined area as shown in FIG. At this time, a predetermined region can also be removed by lithography and etching.
  • step S55 the manufacturing apparatus forms the upper electrode 38 as shown in FIG.
  • step S56 the manufacturing apparatus forms an interlayer film on the upper electrode 38
  • step S57 the on-chip lens 113 is formed on the formed interlayer film.
  • the solid-state imaging device 1 is manufactured as described above.
  • 28 and 29 are plan views showing the top layout of the solid-state imaging device of the present technology.
  • the phase difference detection pixels are adjacent to each other on the left and right.
  • the first column is a column in which the imaging pixels 21-1 are arranged
  • the second column from the left is a column in which the phase difference detection pixels 22-1 having the light shielding film 35-1 are arranged. is there.
  • the third column from the left is a column in which the phase difference detection pixels 22-2 having the light shielding film 35-2 are arranged, and the imaging pixel 21-2 is arranged in the fourth column from the left. Is a column.
  • the phase difference detection pixels are adjacent to each other in the vertical direction.
  • the top row is the row where the imaging pixel 21-1 is arranged
  • the second row from the top is the row where the phase difference detection pixel 22-1 having the light shielding film 35-1 is arranged. It is.
  • the third row from the top is the row where the phase difference detection pixels 22-2 having the light shielding film 35-2 are arranged
  • the fourth row from the top is arranged the imaging pixels 21-2. Line.
  • the phase difference detection pixels are arranged on a 4 ⁇ 4 diagonal line.
  • the light shielding films 35-1 and 35-2 are triangular and are formed so as to cover approximately half of the pixels.
  • phase difference detection pixels 22-2 are formed so that the light shielding film 35-2 is formed on the lower right side on the diagonal line from the upper left to the lower right (oblique direction).
  • phase difference detection pixels 22-1 are arranged on the diagonal line from the upper right to the lower left so that the light shielding film 35-1 is formed on the upper left side.
  • phase difference detection pixels 22-2 are formed so that the light shielding film 35-2 is formed on the lower left side on the diagonal line from the upper left to the lower right (oblique direction).
  • four phase difference detection pixels 22-1 are arranged on the diagonal line from the upper right to the lower left so that the light shielding film 35-1 is formed on the upper right side.
  • the positions of the light shielding films 35-1 and 35-2 in the phase difference detection pixels 22-1 and 22-2 are different.
  • the step film property of the embedded film when removing the photoelectric conversion film on the phase difference detection pixel, it is necessary to improve the step film property of the embedded film in order to prevent intrusion of moisture and gas (oxygen) from the end.
  • the left and right opening patterns of the phase difference detection pixels are arranged in adjacent pixels, and the area of the photoelectric conversion film is made as large as possible to reduce the aspect of the embedded portion.
  • the step film property of the embedded film can be improved, and the intrusion of moisture and gas (oxygen) from the side wall can be suppressed.
  • FIG. 30A is a plan view showing a top layout of the solid-state imaging device of the present technology
  • FIG. 30B is a cross-sectional view.
  • the phase difference detection pixels 22-1 and 22-2 are arranged adjacent to each other on the left and right. By doing in this way, as shown by the dotted line E, the area
  • FIG. 31A is a plan view showing a top layout of the solid-state imaging device
  • FIG. 31B is a cross-sectional view.
  • the imaging pixel 21-1, the phase difference detection pixel 22-1, the imaging pixel 21-2, and the phase difference detection pixel 22-2 are used. Pixels and phase difference detection pixels are alternately arranged.
  • the region from which the photoelectric conversion film is removed becomes narrower than in the case of A in FIG. 30 and B in FIG.
  • phase difference detection pixel since there is no organic film on the light irradiation side in the phase difference detection pixel, all RGB light can be incident on the photodiode. Thereby, the accuracy of phase difference detection, that is, focus detection can be improved.
  • the longitudinal spectral sensor can obtain all RGB light information in one pixel.
  • a sensor that is not in the vertical direction can obtain information of one RGB light with one pixel. Therefore, by applying the present technology to a sensor for longitudinal spectroscopy, the amount of signal obtained by one pixel is larger than that for a sensor that is not longitudinal spectroscopy, so that the accuracy of focus detection can be improved.
  • FIG. 32 is a diagram illustrating a usage example in which the above-described solid-state imaging device is used.
  • the solid-state imaging device (image sensor) described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-ray as follows.
  • Devices for taking images for viewing such as digital cameras and mobile devices with camera functions
  • Devices used for traffic such as in-vehicle sensors that capture the back, surroundings, and interiors of vehicles, surveillance cameras that monitor traveling vehicles and roads, and ranging sensors that measure distances between vehicles, etc.
  • Equipment used for home appliances such as TVs, refrigerators, air conditioners, etc. to take pictures and operate the equipment according to the gestures ⁇ Endoscopes, equipment that performs blood vessel photography by receiving infrared light, etc.
  • Equipment used for medical and health care ⁇ Security equipment such as security surveillance cameras and personal authentication cameras ⁇ Skin measuring instrument for photographing skin and scalp photography Such as a microscope to do beauty Equipment used for sports-Equipment used for sports such as action cameras and wearable cameras for sports applications-Used for agriculture such as cameras for monitoring the condition of fields and crops apparatus
  • the present technology is not limited to application to a solid-state imaging device, but can also be applied to an imaging device.
  • the imaging apparatus refers to a camera system such as a digital still camera or a digital video camera, or an electronic apparatus having an imaging function such as a mobile phone.
  • a module-like form mounted on an electronic device that is, a camera module is used as an imaging device.
  • the 33 includes a solid-state imaging device (element chip) 301, an optical lens 302, a shutter device 303, a drive circuit 304, and a signal processing circuit 305.
  • the solid-state imaging device 301 the solid-state imaging device 1 according to the first embodiment of the present technology described above is provided. Thereby, the reliability of the solid-state imaging device 301 of the electronic device 300 can be improved.
  • the optical lens 302 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 301. As a result, signal charges are accumulated in the solid-state imaging device 301 for a certain period.
  • the shutter device 303 controls the light irradiation period and the light shielding period for the solid-state imaging device 301.
  • the drive circuit 304 supplies a drive signal for controlling the signal transfer operation of the solid-state imaging device 301 and the shutter operation of the shutter device 303.
  • the solid-state imaging device 301 performs signal transfer by a drive signal (timing signal) supplied from the drive circuit 304.
  • the signal processing circuit 305 performs various signal processing on the signal output from the solid-state imaging device 301.
  • the video signal subjected to the signal processing is stored in a storage medium such as a memory or output to a monitor.
  • the configuration described as one device (or processing unit) may be divided and configured as a plurality of devices (or processing units).
  • the configurations described above as a plurality of devices (or processing units) may be combined into a single device (or processing unit).
  • a configuration other than that described above may be added to the configuration of each device (or each processing unit).
  • a part of the configuration of a certain device (or processing unit) may be included in the configuration of another device (or other processing unit). . That is, the present technology is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present technology.
  • this technique can also take the following structures.
  • a substrate on which a photoelectric conversion unit is formed An imaging region composed of a plurality of pixels arranged two-dimensionally on the substrate, The plurality of pixels include an imaging pixel formed between the substrate and the light incident side, which uses an organic photoelectric conversion film that absorbs light in a certain wavelength band, and the substrate and the light incident side.
  • the phase difference detection pixel includes a light-shielding film that covers a substantially half region of the pixel between the substrate and the light incident side.
  • the transparent film is made of a material having a high light transmittance in a visible light region.
  • the transparent film is made of a material that absorbs less light.
  • phase difference detection pixel includes at least one of an upper electrode and a lower electrode.
  • phase difference detection pixel in the pair of pixels is disposed adjacent to the phase difference detection pixel in the other pair of pixels.
  • Imaging device. The phase difference detection pixels in the pair of pixels are arranged at adjacent positions on the left and right sides of the phase difference detection pixels in the other pair of pixels according to any one of (1) to (9).
  • Solid-state imaging device. (11) The phase difference detection pixels in the pair of pixels are arranged at adjacent positions above and below the phase difference detection pixels in the other pair of pixels. Solid-state imaging device.
  • the phase difference detection pixel in the pair of pixels is disposed at an obliquely adjacent position with the phase difference detection pixel in the other pair of pixels.
  • Solid-state imaging device (13) The solid-state imaging device according to any one of (1) to (12), wherein the organic photoelectric conversion film absorbs green light.
  • a substrate on which a photoelectric conversion unit is formed a substrate on which a photoelectric conversion unit is formed;
  • An imaging region composed of a plurality of pixels arranged two-dimensionally on the substrate, The plurality of pixels include an imaging pixel formed between the substrate and the light incident side, which uses an organic photoelectric conversion film that absorbs light in a certain wavelength band, and the substrate and the light incident side.
  • a solid-state imaging device including a pair of pixels including a phase difference detection pixel from which the formed organic photoelectric conversion film is removed; A signal processing circuit for processing an output signal output from the solid-state imaging device; And an optical system that makes incident light incident on the solid-state imaging device.
  • 1 solid-state imaging device 2 pixels, 3 pixel area, 11 semiconductor substrate, 21 imaging pixels, 22 phase difference detection pixels, 31 semiconductor substrate, 32 Si PD, 33 interlayer film, 34 light shielding film, 35 light shielding film, 36 lower electrode , 37 organic photoelectric conversion film, 38 upper electrode, 51, 52, 61, 62 Si PD, 71 upper electrode, 72 transparent film, 111 interlayer film, 112 resist, 113 on-chip lens, 131 photosensitive material resin, 132 resist, 133 Interlayer film, 141 photosensitive resin, 300 electronic equipment, 301 solid-state imaging device, 302 optical lens, 303 shutter device, 304 drive circuit, 305 signal processing circuit

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention se rapporte à un dispositif d'imagerie à semi-conducteur et à un dispositif électronique qui sont en mesure d'améliorer la précision de détection de mise au point. Dans un pixel de détection de déphasage, un film de couche intermédiaire est formé sur un substrat semi-conducteur sur lequel est formé un photodétecteur de Si, de la même manière que dans un pixel d'imagerie. Toutefois, contrairement à un pixel d'imagerie, le film de couche intermédiaire comprend un film de protection contre la lumière 35 de sorte à protéger une moitié du pixel de détection de déphasage contre la lumière, et ne présente pas de film de conversion photoélectrique organique disposé au niveau du côté d'incidence de la lumière (sur le film de couche intermédiaire) à l'extérieur du substrat semi-conducteur. La présente invention est applicable, par exemple, à un dispositif d'imagerie à semi-conducteur CMOS, un film organique étant utilisé pour une partie de conversion photoélectrique.
PCT/JP2016/064830 2015-06-01 2016-05-19 Dispositif d'imagerie à semi-conducteur et dispositif électronique Ceased WO2016194620A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018190946A (ja) * 2017-05-01 2018-11-29 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ イメージセンサー
WO2019039010A1 (fr) * 2017-08-22 2019-02-28 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie à semi-conducteurs, procédé de fabrication d'élément d'imagerie à semi-conducteurs, et dispositif électronique
US10819929B2 (en) * 2017-08-10 2020-10-27 Samsung Electronics Co., Ltd. Image sensor for compensating for signal difference between pixels

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050331A (ja) * 2013-09-02 2015-03-16 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US20150146056A1 (en) * 2013-11-27 2015-05-28 Sony Corporation Solid-state imaging device and electronic apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050331A (ja) * 2013-09-02 2015-03-16 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US20150146056A1 (en) * 2013-11-27 2015-05-28 Sony Corporation Solid-state imaging device and electronic apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018190946A (ja) * 2017-05-01 2018-11-29 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ イメージセンサー
US12009379B2 (en) 2017-05-01 2024-06-11 Visera Technologies Company Limited Image sensor
US10819929B2 (en) * 2017-08-10 2020-10-27 Samsung Electronics Co., Ltd. Image sensor for compensating for signal difference between pixels
WO2019039010A1 (fr) * 2017-08-22 2019-02-28 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie à semi-conducteurs, procédé de fabrication d'élément d'imagerie à semi-conducteurs, et dispositif électronique
US11240450B2 (en) 2017-08-22 2022-02-01 Sony Semiconductor Solutions Corporation Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic apparatus

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