WO2016194620A1 - Solid-state imaging device and electronic device - Google Patents

Abstract

The present disclosure pertains to a solid-state imaging device and an electronic device which are able to improve focus detection accuracy. In a phase difference detecting pixel, an interlayer film is formed on a semiconductor substrate which has a Si PD formed thereon, in the same manner as in an imaging pixel. However, unlike an imaging pixel, the interlayer film includes a light-shielding film 35 so as to shield a half of the phase difference detecting pixel from light, and does not have an organic photoelectric conversion film disposed at the light incident side (on the interlayer film) outside the semiconductor substrate. The present disclosure is applicable to, for example, a CMOS solid-state imaging device in which an organic film is used for a photoelectric conversion section.

Description

Solid-state imaging device and electronic apparatus

The present disclosure relates to a solid-state imaging device and an electronic device, and more particularly, to a solid-state imaging device and an electronic device that improve the accuracy of focus detection.

There is a solid-state imaging device having a photoelectric conversion film outside Si and having a pixel for detecting a phase difference.

For example, Patent Document 1 describes a solid-state imaging device that detects a phase difference by dividing a light shielding film on an organic photoelectric conversion film. Patent Document 2 describes that a sensor for detecting a phase difference is provided below the organic film.

JP 2014-67948 A JP 2011-103335 A

However, in the case of the solid-state imaging device described in Patent Document 1, the formation and processing of the light shielding film directly on the organic photoelectric conversion film has many process restrictions due to suppression of abdominal stress and damage, and actual formation is difficult. It was.

In the case of the solid-state imaging device described in Patent Document 2, since there is a material that absorbs light of a certain wavelength on the light incident side from Si of the phase difference detection pixel, the amount of light incident on the Si PD is reduced, and the focus detection accuracy is improved. It had fallen. In addition, the technique of Patent Document 2 has been difficult to apply to a stacked sensor.

The present disclosure has been made in view of such a situation, and can improve the accuracy of focus detection.

A solid-state imaging device according to one aspect of the present technology includes a substrate on which a photoelectric conversion unit is formed, and an imaging region including a plurality of pixels arranged two-dimensionally on the substrate, and the plurality of pixels include: An imaging pixel using an organic photoelectric conversion film that absorbs light of a certain wavelength band formed between the substrate and the light incident side, and the organic photoelectric formed between the substrate and the light incident side. It is composed of a pair of pixels including a phase difference detection pixel from which the film change is removed.

The phase difference detection pixel may have a light shielding film that covers a substantially half region of the pixel between the substrate and the light incident side.

The phase difference detection pixel may have a transparent film at a position corresponding to the position where the organic photoelectric conversion film is removed.

The transparent film is made of a material having a high light transmittance in the visible light region.

The transparent film is made of a material that absorbs little light.

The transparent film is made of a material having low moisture and gas permeability.

The transparent film is made of a material having high flatness.

The phase difference detection pixel may have at least one of an upper electrode and a lower electrode.

The phase difference detection pixel in the pair of pixels is arranged adjacent to the phase difference detection pixel in the other pair of pixels.

The phase difference detection pixels in the pair of pixels are arranged at positions adjacent to the left and right of the phase difference detection pixels in the other pair of pixels.

The phase difference detection pixels in the pair of pixels are arranged at adjacent positions above and below the phase difference detection pixels in the other pair of pixels.

The phase difference detection pixels in the pair of pixels are arranged at obliquely adjacent positions to the phase difference detection pixels in the other pair of pixels.

The organic photoelectric conversion film can absorb green light.

A plurality of the photoelectric conversion units in at least one of the imaging pixels and the phase difference detection pixels are stacked in the depth direction.

An electronic apparatus according to an aspect of the present invention includes a substrate on which a photoelectric conversion unit is formed, and an imaging region including a plurality of pixels arranged in a two-dimensional manner on the substrate, An imaging pixel using an organic photoelectric conversion film that absorbs light in a certain wavelength band formed between a substrate and a light incident side, and the organic photoelectric conversion formed between the substrate and the light incident side A solid-state imaging device including a pair of pixels including a phase difference detection pixel from which a film is removed, a signal processing circuit that processes an output signal output from the solid-state imaging device, and incident light to the solid-state imaging device And an optical system incident on the optical system.

In one aspect of the present technology, a plurality of pixels in an imaging region including a plurality of pixels arranged two-dimensionally on a substrate on which a photoelectric conversion unit is formed are formed between the substrate and the light incident side. An imaging pixel using an organic photoelectric conversion film that absorbs light in a certain wavelength band, and a phase difference detection pixel from which the organic photoelectric conversion film formed between the substrate and the light incident side is removed; Is composed of a pair of pixels.

According to the present technology, the accuracy of focus detection can be improved. According to the present technology, it is possible to further improve the accuracy of focus detection.

In addition, the effect described in this specification is an illustration to the last, and the effect of this technique is not limited to the effect described in this specification, and there may be an additional effect.

It is a block diagram which shows the schematic structural example of the solid-state imaging device to which this technique is applied. It is sectional drawing which shows the structural example of the solid-state imaging device to which this technique is applied. It is sectional drawing which shows the other structural example of the solid-state imaging device of this technique. It is sectional drawing which shows the other structural example of the solid-state imaging device of this technique. It is sectional drawing which shows the other structural example of the solid-state imaging device of this technique. It is sectional drawing which shows the other structural example of the solid-state imaging device of this technique. It is sectional drawing which shows the other structural example of the solid-state imaging device of this technique. It is sectional drawing which shows the other structural example of the solid-state imaging device of this technique. It is a flowchart explaining an example of the manufacturing process of the solid-state imaging device of this technique. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. 12 is a flowchart for explaining another example of the manufacturing process of the solid-state imaging device according to the present technology. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. 12 is a flowchart for explaining another example of the manufacturing process of the solid-state imaging device according to the present technology. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is process drawing explaining an example of a manufacturing process. It is a top view which shows the upper surface layout of the solid-state imaging device of this technique. It is a top view which shows the upper surface layout of the solid-state imaging device of this technique. It is a figure explaining the upper surface layout of the solid-state imaging device of this art. It is a figure explaining the upper surface layout of a solid-state imaging device. It is a figure which shows the usage example of an image sensor. It is a block diagram which shows the structural example of the electronic device to which this technique is applied.

Hereinafter, modes for carrying out the present disclosure (hereinafter referred to as embodiments) will be described. The description will be given in the following order.
1. First embodiment (example of solid-state imaging device)
2. Second embodiment (use example of image sensor)
3. Third embodiment (an example of an electronic device)

<1. First Embodiment (Example of Solid-State Imaging Device)>
<Schematic configuration example of solid-state imaging device>
FIG. 1 illustrates a schematic configuration example of an example of a complementary metal oxide semiconductor (CMOS) solid-state imaging device applied to each embodiment of the present technology.

As shown in FIG. 1, in a solid-state imaging device (element chip) 1, pixels 2 including a plurality of photoelectric conversion elements (Si PD) are regularly and two-dimensionally arranged on a semiconductor substrate 11 (for example, a silicon substrate). The pixel area (so-called imaging area) 3 and a peripheral circuit section are included.

The pixel 2 includes a photoelectric conversion element (for example, a photodiode) and a plurality of pixel transistors (so-called MOS transistors). The plurality of pixel transistors can be constituted by three transistors, for example, a transfer transistor, a reset transistor, and an amplifying transistor, and can further be constituted by four transistors by adding a selection transistor. Since the equivalent circuit of each pixel 2 (unit pixel) is the same as a general one, detailed description thereof is omitted here.

Also, the pixel 2 can have a shared pixel structure. The pixel sharing structure includes a plurality of photodiodes, a plurality of transfer transistors, one shared floating diffusion, and one other pixel transistor that is shared.

The peripheral circuit section includes a vertical drive circuit 4, a column signal processing circuit 5, a horizontal drive circuit 6, an output circuit 7, and a control circuit 8.

The control circuit 8 receives data for instructing an input clock, an operation mode, and the like, and outputs data such as internal information of the solid-state imaging device 1. Specifically, the control circuit 8 is based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, and the clock signal or the reference signal for the operations of the vertical drive circuit 4, the column signal processing circuit 5, and the horizontal drive circuit 6 Generate a control signal. The control circuit 8 inputs these signals to the vertical drive circuit 4, the column signal processing circuit 5, and the horizontal drive circuit 6.

The vertical drive circuit 4 is composed of, for example, a shift register, selects a pixel drive wiring, supplies a pulse for driving the pixel 2 to the selected pixel drive wiring, and drives the pixels 2 in units of rows. Specifically, the vertical drive circuit 4 selectively scans each pixel 2 in the pixel region 3 sequentially in the vertical direction in units of rows, and generates the signal according to the amount of light received by the photoelectric conversion element of each pixel 2 through the vertical signal line 9. A pixel signal based on the signal charge is supplied to the column signal processing circuit 5.

The column signal processing circuit 5 is disposed, for example, for each column of the pixels 2 and performs signal processing such as noise removal on the signal output from the pixels 2 for one row for each pixel column. Specifically, the column signal processing circuit 5 performs signal processing such as CDS (Correlated Double Sampling) for removing fixed pattern noise specific to the pixel 2, signal amplification, A / D (Analog / Digital) conversion, and the like. . At the output stage of the column signal processing circuit 5, a horizontal selection switch (not shown) is provided connected to the horizontal signal line 10.

The horizontal drive circuit 6 is constituted by, for example, a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 5 in order, and the pixel signal is output from each of the column signal processing circuits 5 to the horizontal signal line. 10 to output.

The output circuit 7 performs signal processing on the signals sequentially supplied from each of the column signal processing circuits 5 through the horizontal signal line 10 and outputs the signals. For example, the output circuit 7 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like.

The input / output terminal 12 is provided for exchanging signals with the outside.

<Structural example of solid-state imaging device>
FIG. 2 is a cross-sectional view illustrating a structure example of a solid-state imaging device to which the present technology is applied. The solid-state imaging device in the example of FIG. 2 is configured by a stacked CIS (CMOS Image Sensor).

In the example of FIG. 2, an imaging pixel 21 in which the acquired information is a pixel used for imaging, and a phase difference detection pixel in which the acquired information is a pixel used for phase difference detection (focus detection). An example in which 22 are installed adjacent to each other is shown.

In the imaging pixel 21, an interlayer film 33 is formed on the semiconductor substrate 31 on which the Si PD 32 is formed. In the interlayer film 33, a light shielding film 34 is provided at a boundary portion between adjacent pixels in order to shield light from the lens of the adjacent pixel. On the interlayer film 33 on the light incident side outside the semiconductor substrate 31, a lower electrode 36, an organic photoelectric conversion film 37, and an upper electrode 38 are provided in this order from the bottom.

On the other hand, in the phase difference detection pixel 22, similarly to the imaging pixel 21, an interlayer film 33 is formed on the semiconductor substrate 31 on which the Si PD 32 is formed. However, unlike the imaging pixel 21, the interlayer film 33 is provided with a light shielding film 35 for shielding about half of the phase difference detection pixel 22, and further, a light incident side (interlayer film) outside the semiconductor substrate 31. 33) is not provided with an organic photoelectric conversion film. Although details will be described later, in the phase difference detection pixel 22, the organic photoelectric conversion film is actually removed on the light incident side (on the interlayer film 33).

In the imaging pixel 21, green light from the light incident side is absorbed by the organic photoelectric conversion film 37, and blue and red lights other than green mainly pass through the organic photoelectric conversion film 37, and Si PD 32. Is incident on.

On the other hand, since the organic photoelectric conversion film is not provided in the phase difference detection pixel 22, all the green, blue, and red light from the light incident side is incident on the Si PD 32. As a result, the Si PD 32 can receive more light than the imaging pixel 21, so that the phase difference detection accuracy can be improved.

In the example of FIG. 2, in the phase difference detection pixel, there is no step between the adjacent imaging pixels 21 because there is no organic photoelectric conversion film. However, as will be described later, SiN, SiO 2 Therefore, a transparent film such as a transparent organic material may be embedded. Further, in the example of FIG. 2, the structure above the upper electrode is also omitted, but in actuality, a passivation film such as SIN or an on-chip lens may be provided on the upper electrode.

3 to 8 are cross-sectional views showing other structural examples of the solid-state imaging device. FIG. 3 is a diagram illustrating a structural example in which the shape of the lower electrode of the phase difference detection pixel is the same as that of the imaging pixel.

In the example of FIG. 3, the structure of the imaging pixel 21 is formed in the same manner as in the example of FIG. 2. Mainly, green light from the light incident side is absorbed by the organic photoelectric conversion film 37, and In addition, Blue and Red light other than Green passes through the organic photoelectric conversion film 37 and enters the Si PD 32.

On the other hand, in the phase difference detection pixel 22, the lower electrode 41 has the same shape as the lower electrode 36 of the imaging pixel 21 on the interlayer film 33 provided with the light shielding film 35 for shielding half of the phase difference detection pixel 22. Is provided.

In the phase difference detection pixel 22 of FIG. 3 as well, since the organic photoelectric conversion film is not provided on the lower electrode 36, all the green, blue, and red light from the light incident side is incident on the Si PD 32. The As a result, the Si３２PD 32 of the phase difference detection pixel 22 can receive more light than the imaging pixel 21, so that the phase difference detection accuracy can be improved.

FIG. 4 is a diagram illustrating a structure example in which two or more Si-PDs are stacked in the depth direction in the imaging pixel.

In the imaging pixel 21 in the example of FIG. 4, the imaging pixel shown in FIG. 2 is that the Si PD 32 provided on the semiconductor substrate 31 is replaced with two Si PDs 51 and Si PDs 52 stacked in the depth direction. 21 is different. Therefore, in the imaging pixel 21, green light mainly from the light incident side is absorbed by the organic photoelectric conversion film 37, and blue and red light other than green mainly pass through the organic photoelectric conversion film 37. Then, the light enters the upper Si PD 52. Then, in the upper Si PD 52, mainly Blue light is absorbed, and most of the Red light is incident on the lower Si PD 51.

On the other hand, the structure of the phase difference detection pixel 22 is formed in the same manner as in the example of FIG. 2, and the organic photoelectric conversion film is not provided on the light incident side (on the interlayer film 33) outside the semiconductor substrate 31.

Therefore, in the example of FIG. 4, it is possible to realize vertical spectroscopy in the imaging pixel and to improve focus detection accuracy due to high sensitivity in the phase difference detection pixel.

Note that Si-PD is not limited to two layers, but may be three layers.

FIG. 5 is a diagram showing a structure example in which two or more Si-PDs are stacked in the depth direction in the imaging pixel and the phase difference detection pixel.

In the example of FIG. 5, the structure of the imaging pixel 21 is formed in the same manner as in the example of FIG. 4. In the imaging pixel 21, green light mainly from the light incident side is converted into an organic photoelectric conversion film. The blue and red light other than green is absorbed mainly by the light through the organic photoelectric conversion film 37 and incident on the upper Si PD 52. Then, in the upper Si PD 52, mainly Blue light is absorbed, and most of the Red light is incident on the lower Si PD 51.

On the other hand, in the phase difference detection pixel 22, the point that the Si PD 32 provided on the semiconductor substrate 31 is replaced with two Si PD 61 and Si PD 62 that are stacked in the depth direction is the same as that of the imaging pixel 21 in FIG. 4. Is different. Therefore, one of Green, Blue, and Red light from the light incident side is incident on the Si PD 61, and one is incident on the Si PD 62.

Therefore, in the case of the example in FIG. 5, it is possible to reduce the number of steps by realizing vertical spectroscopy in the imaging pixels and making the phase difference detection pixels have the same structure as the imaging pixels.

FIG. 6 is a diagram showing a structural example in which a transparent film and an upper electrode are provided on an interlayer film in a phase difference detection pixel.

In the example of FIG. 6, the structure of the imaging pixel 21 is formed similarly to the example of FIG. 2, and green light mainly from the light incident side is absorbed by the organic photoelectric conversion film 37 and mainly. Blue and Red lights other than Green pass through the organic photoelectric conversion film 37 and enter the Si PD 32.

On the other hand, in the phase difference detection pixel 22, a transparent material made of a transparent material having a high light transmittance in the visible light region is provided on the interlayer film 33 provided with the light shielding film 35 for shielding half of the phase difference detection pixel 22. A film 72 is disposed, and an upper electrode 71 is disposed on the transparent film 72. The upper electrode 71 can be formed simultaneously with the upper electrode 38 of the imaging pixel 21.

As described above, in the phase difference detection pixel of FIG. 6, the organic photoelectric conversion film is not disposed, but the transparent material and the upper electrode are formed. In this case, it is not necessary to process the upper electrode of the phase difference detection pixel portion, and the process construction is facilitated.

FIG. 7 is a diagram showing a structural example in which a lower electrode and a transparent film are provided on an interlayer film in a phase difference detection pixel.

In the example of FIG. 7, the structure of the imaging pixel 21 is formed in the same manner as in the example of FIG. 2. Mainly, green light from the light incident side is absorbed by the organic photoelectric conversion film 37 and mainly. Blue and Red light other than Green passes through the organic photoelectric conversion film 37 and enters the organic photoelectric conversion film 37.

On the other hand, in the phase difference detection pixel 22, the lower electrode 41 has the same shape as the lower electrode 36 of the imaging pixel 21 on the interlayer film 33 provided with the light shielding film 35 for shielding half of the phase difference detection pixel 22. Is provided. A transparent film 72 is disposed on the lower electrode 36.

FIG. 8 is a diagram showing a structural example in which a lower electrode, a transparent film, and an upper electrode are provided on an interlayer film in a phase difference detection pixel.

In the example of FIG. 8, the structure of the imaging pixel 21 is formed in the same manner as in the example of FIG. 2. Mainly, green light from the light incident side is absorbed by the organic photoelectric conversion film 37 and mainly. Blue and Red lights other than Green pass through the organic photoelectric conversion film 37 and enter the Si PD 32.

On the other hand, in the phase difference detection pixel 22, the lower electrode 41 has the same shape as the lower electrode 36 of the imaging pixel 21 on the interlayer film 33 provided with the light shielding film 35 for shielding half of the phase difference detection pixel 22. Is provided. A transparent film 72 is provided on the lower electrode 36, and an upper electrode 71 formed simultaneously with the upper electrode 38 of the imaging pixel 21 is disposed on the transparent film 72.

In the examples of FIGS. 6 to 8, instead of Si PD, two types of Si PD shown in FIG. 4 or 5 may be vertically stacked.

As described above, the organic photoelectric conversion film is not arranged in the phase difference detection pixel, that is, it is removed, so that the light in the wavelength band absorbed by the organic photoelectric conversion film is taken into the photodiode (Si PD), The sensitivity of the phase difference detection pixel can be improved.

Also, as in the examples of FIGS. 6 to 8, by embedding a transparent film or the like so as not to cause a step between the imaging pixel and the phase difference detection pixel, the characteristics of the microlens and the like change. This can be suppressed.

Note that the material embedded as the transparent film 72 in the photoelectric conversion film removal region is, for example, a silicon nitride film, but other materials may be used. For the purpose of improving the sensitivity of the phase difference detection pixel, it is desirable to use a film that absorbs as little light as possible. For example, it is desirable to use a transparent film such as a silicon oxide film.

Also, when an organic film is used as a photoelectric conversion film, it is necessary to prevent changes in film characteristics due to intrusion of moisture and gas (oxygen) from the processed end after etching the film. It is preferable to use a film having low properties, such as a silicon nitride film or alumina.

Furthermore, when embedding a region where a photoelectric conversion film is not formed, it is desirable to improve the flatness of the device after embedding. This is because the higher flatness in the subsequent processing of the on-chip microlens formed later is effective for improving the processing uniformity by lithography or etching. For this purpose, a coating film having high flatness on the device surface after formation is used. In this case, an organic material film or silica that can be formed by coating can be used.

As another planarization method, a method in which the region where the photoelectric conversion film is removed is embedded with an insulating film and the entire surface of the device is planarized by CMP or etching is considered. However, when using CMP, for example, scratching is performed after CMP. It is possible to use a silicon oxide film with less generation as a buried film.

Next, an example of a manufacturing process of the solid-state imaging device according to the present technology will be described with reference to a flowchart of FIG. This process is performed by a solid-state imaging device manufacturing apparatus (not shown).

As shown in FIG. 10, on the interlayer insulating film 101, Si PD 51-1 and Si PD 52-1 are used for the imaging pixel 21-1, and Si６１PD 61-1 and the phase difference detection pixel 22-1 are used. Si PD 62-1 is embedded, and Si PD 51-2 and Si PD 52-2 are used for imaging pixel 21-2, and Si PD 61-2 and Si PD 62-2 are used for phase difference detection pixel 22-2. An embedded semiconductor substrate 31 is prepared. On the semiconductor substrate 31, there is provided an interlayer film 33 on which a light shielding film 35-1 for the phase difference detection pixel 22-1 and a light shielding film 35-2 for the phase difference detection pixel 22-2 are formed. A lower electrode 36 is formed thereon.

In step S <b> 11, the manufacturing apparatus deposits the organic photoelectric conversion film 37 and the upper electrode material to be the upper electrode 38 on the lower electrode 36.

In step S12, the manufacturing apparatus removes the organic photoelectric conversion film 37 and the upper electrode 38 of the phase difference detection pixels 22-1 and 22-2 as shown in FIG.

In step S13, although the phase difference detection pixels 22-1 and 22-2 are removed in the manufacturing apparatus, as shown in FIG. 12, for example, a silicon nitride film or the like is formed on the organic photoelectric conversion film 37. An interlayer film 111 is formed.

In step S14, as shown in FIG. 13, the manufacturing apparatus applies and planarizes a resist 112 on the interlayer film 111 formed in step S13.

In step S15, the manufacturing apparatus etches back the resist 112 applied in step S14 as shown in FIG. When CMP is performed on the silicon nitride film that is the interlayer film 111, scratches are likely to occur, which may cause image defects such as swirl. In such a case, planarization can be performed without generation of scratches by performing planarization by the etch-back method.

In step S16, as shown in FIG. 15, the manufacturing apparatus forms an on-chip lens 113 on the interlayer film 111 planarized in step S14.

The solid-state imaging device 1 is manufactured as described above.

As another manufacturing process, for example, step S14 described above may be skipped, the interlayer film 111 may be CMPed in step S15, and the on-chip lens 113 may be formed in step S16.

Next, another example of the manufacturing process of the solid-state imaging device of the present technology will be described with reference to the flowchart of FIG. Steps S31 and S32 are the same processing as steps S11 and S12 of FIG.

In step S33, the manufacturing apparatus removes the phase difference detection pixels 22-1 and 22-2. As shown in FIG. 17, for example, a photosensitive material resin 131 is applied on the organic photoelectric conversion film 37. Apply.

In step S34, the manufacturing apparatus exposes and removes the photosensitive resin 131 other than the predetermined area (imaging pixels) as shown in FIG. In step S35, the manufacturing apparatus applies a resist 132 to the entire surface as shown in FIG.

In step S36, the manufacturing apparatus etches back. At that time, the protruding portion of the photosensitive resin 131 may be polished by CMP. By eliminating the protrusions of the photosensitive resin 131, subsequent on-chip lenses can be easily formed.

In step S37, the manufacturing apparatus forms an interlayer film 133 as shown in FIG. 21, and forms an on-chip lens 113 on the formed interlayer film 133.

The solid-state imaging device 1 is manufactured as described above.

As another manufacturing process, for example, steps S35 and S36 described above are skipped, and in step S37, an interlayer film 133 is formed, and the on-chip lens 113 is formed on the formed interlayer film 133. You may do it.

Furthermore, still another example of the manufacturing process of the solid-state imaging device of the present technology will be described with reference to the flowchart of FIG.

In step S51, the manufacturing apparatus deposits the organic photoelectric conversion film 37 on the lower electrode. In step S52, the manufacturing apparatus removes the organic photoelectric conversion film 37 of the phase difference detection pixels 22-1 and 22-2 as shown in FIG. Here, for example, a method in which a photosensitive material is mixed in the photoelectric conversion film and removed by exposure, or a method in which a predetermined region is removed by lithography and etching is used.

In step S53, the manufacturing apparatus applies the photosensitive resin 141 as shown in FIG. For example, a photosensitive material is mixed into the organic photoelectric conversion film 37 in order to be removed by exposure.

In step S54, the manufacturing apparatus exposes and removes the photosensitive resin 141 other than the predetermined area as shown in FIG. At this time, a predetermined region can also be removed by lithography and etching.

In step S55, the manufacturing apparatus forms the upper electrode 38 as shown in FIG. In step S56, the manufacturing apparatus forms an interlayer film on the upper electrode 38, and in step S57, the on-chip lens 113 is formed on the formed interlayer film.

The solid-state imaging device 1 is manufactured as described above.

28 and 29 are plan views showing the top layout of the solid-state imaging device of the present technology.

For example, in the example of FIG. 28A, an example is shown in which the phase difference detection pixels are adjacent to each other on the left and right. For example, the first column is a column in which the imaging pixels 21-1 are arranged, and the second column from the left is a column in which the phase difference detection pixels 22-1 having the light shielding film 35-1 are arranged. is there. Further, the third column from the left is a column in which the phase difference detection pixels 22-2 having the light shielding film 35-2 are arranged, and the imaging pixel 21-2 is arranged in the fourth column from the left. Is a column.

For example, in the example of FIG. 28B, an example is shown in which the phase difference detection pixels are adjacent to each other in the vertical direction. For example, the top row is the row where the imaging pixel 21-1 is arranged, and the second row from the top is the row where the phase difference detection pixel 22-1 having the light shielding film 35-1 is arranged. It is. Further, the third row from the top is the row where the phase difference detection pixels 22-2 having the light shielding film 35-2 are arranged, and the fourth row from the top is arranged the imaging pixels 21-2. Line.

Furthermore, in the examples of FIG. 29A and FIG. 29B, an example in which the phase difference detection pixels are arranged on a 4 × 4 diagonal line is shown. In this example, the light shielding films 35-1 and 35-2 are triangular and are formed so as to cover approximately half of the pixels.

In the case of the example of FIG. 29A, for example, 4 phase difference detection pixels 22-2 are formed so that the light shielding film 35-2 is formed on the lower right side on the diagonal line from the upper left to the lower right (oblique direction). One is arranged. Further, for example, four phase difference detection pixels 22-1 are arranged on the diagonal line from the upper right to the lower left so that the light shielding film 35-1 is formed on the upper left side.

In the case of the example in FIG. 29B, for example, four phase difference detection pixels 22-2 are formed so that the light shielding film 35-2 is formed on the lower left side on the diagonal line from the upper left to the lower right (oblique direction). Has been placed. Further, for example, four phase difference detection pixels 22-1 are arranged on the diagonal line from the upper right to the lower left so that the light shielding film 35-1 is formed on the upper right side.

That is, in the example of FIG. 29A and the example of FIG. 29B, the positions of the light shielding films 35-1 and 35-2 in the phase difference detection pixels 22-1 and 22-2 are different.

Here, when removing the photoelectric conversion film on the phase difference detection pixel, it is necessary to improve the step film property of the embedded film in order to prevent intrusion of moisture and gas (oxygen) from the end. In particular, in the case of fine pixels, in order to improve the coverage of the embedded film, the left and right opening patterns of the phase difference detection pixels are arranged in adjacent pixels, and the area of the photoelectric conversion film is made as large as possible to reduce the aspect of the embedded portion. In addition, the step film property of the embedded film can be improved, and the intrusion of moisture and gas (oxygen) from the side wall can be suppressed.

30A is a plan view showing a top layout of the solid-state imaging device of the present technology, and FIG. 30B is a cross-sectional view. In the example of FIG. 30A and the example of FIG. 30B, similarly to the example of FIG. 28A, the phase difference detection pixels 22-1 and 22-2 are arranged adjacent to each other on the left and right. By doing in this way, as shown by the dotted line E, the area | region which extracts a photoelectric converting film becomes wide.

On the other hand, FIG. 31A is a plan view showing a top layout of the solid-state imaging device, and FIG. 31B is a cross-sectional view. In the example of FIG. 31A and FIG. 31B, the imaging pixel 21-1, the phase difference detection pixel 22-1, the imaging pixel 21-2, and the phase difference detection pixel 22-2 are used. Pixels and phase difference detection pixels are alternately arranged. In this case, as indicated by dotted lines E1 and E2, the region from which the photoelectric conversion film is removed becomes narrower than in the case of A in FIG. 30 and B in FIG.

As described above, according to the present technology, since there is no organic film on the light irradiation side in the phase difference detection pixel, all RGB light can be incident on the photodiode. Thereby, the accuracy of phase difference detection, that is, focus detection can be improved.

In addition, the longitudinal spectral sensor can obtain all RGB light information in one pixel. A sensor that is not in the vertical direction can obtain information of one RGB light with one pixel. Therefore, by applying the present technology to a sensor for longitudinal spectroscopy, the amount of signal obtained by one pixel is larger than that for a sensor that is not longitudinal spectroscopy, so that the accuracy of focus detection can be improved.

<2. Second Embodiment (Usage Example of Image Sensor)>
FIG. 32 is a diagram illustrating a usage example in which the above-described solid-state imaging device is used.

The solid-state imaging device (image sensor) described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-ray as follows.

・ Devices for taking images for viewing, such as digital cameras and mobile devices with camera functions ・ For safe driving such as automatic stop and recognition of the driver's condition, Devices used for traffic, such as in-vehicle sensors that capture the back, surroundings, and interiors of vehicles, surveillance cameras that monitor traveling vehicles and roads, and ranging sensors that measure distances between vehicles, etc. Equipment used for home appliances such as TVs, refrigerators, air conditioners, etc. to take pictures and operate the equipment according to the gestures ・ Endoscopes, equipment that performs blood vessel photography by receiving infrared light, etc. Equipment used for medical and health care ・ Security equipment such as security surveillance cameras and personal authentication cameras ・ Skin measuring instrument for photographing skin and scalp photography Such as a microscope to do beauty Equipment used for sports-Equipment used for sports such as action cameras and wearable cameras for sports applications-Used for agriculture such as cameras for monitoring the condition of fields and crops apparatus

<3. Third Embodiment (Example of Electronic Device)>
<Configuration example of electronic equipment>

Furthermore, the present technology is not limited to application to a solid-state imaging device, but can also be applied to an imaging device. Here, the imaging apparatus refers to a camera system such as a digital still camera or a digital video camera, or an electronic apparatus having an imaging function such as a mobile phone. In some cases, a module-like form mounted on an electronic device, that is, a camera module is used as an imaging device.

Here, with reference to FIG. 33, a configuration example of the electronic device according to the third embodiment of the present technology will be described.

33 includes a solid-state imaging device (element chip) 301, an optical lens 302, a shutter device 303, a drive circuit 304, and a signal processing circuit 305. As the solid-state imaging device 301, the solid-state imaging device 1 according to the first embodiment of the present technology described above is provided. Thereby, the reliability of the solid-state imaging device 301 of the electronic device 300 can be improved.

The optical lens 302 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 301. As a result, signal charges are accumulated in the solid-state imaging device 301 for a certain period. The shutter device 303 controls the light irradiation period and the light shielding period for the solid-state imaging device 301.

The drive circuit 304 supplies a drive signal for controlling the signal transfer operation of the solid-state imaging device 301 and the shutter operation of the shutter device 303. The solid-state imaging device 301 performs signal transfer by a drive signal (timing signal) supplied from the drive circuit 304. The signal processing circuit 305 performs various signal processing on the signal output from the solid-state imaging device 301. The video signal subjected to the signal processing is stored in a storage medium such as a memory or output to a monitor.

Note that the embodiments in the present disclosure are not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present disclosure.

Also, in the above, the configuration described as one device (or processing unit) may be divided and configured as a plurality of devices (or processing units). Conversely, the configurations described above as a plurality of devices (or processing units) may be combined into a single device (or processing unit). Of course, a configuration other than that described above may be added to the configuration of each device (or each processing unit). Furthermore, if the configuration and operation of the entire system are substantially the same, a part of the configuration of a certain device (or processing unit) may be included in the configuration of another device (or other processing unit). . That is, the present technology is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present technology.

The preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings, but the disclosure is not limited to such examples. It is obvious that various changes and modifications can be conceived within the scope of the technical idea described in the claims if the person has ordinary knowledge in the technical field to which the present disclosure belongs. Of course, it is understood that it belongs to the technical scope of the present disclosure.

In addition, this technique can also take the following structures.
(1) a substrate on which a photoelectric conversion unit is formed;
An imaging region composed of a plurality of pixels arranged two-dimensionally on the substrate,
The plurality of pixels include an imaging pixel formed between the substrate and the light incident side, which uses an organic photoelectric conversion film that absorbs light in a certain wavelength band, and the substrate and the light incident side. A solid-state imaging device including a pair of pixels including a phase difference detection pixel from which the formed organic photoelectric conversion film is removed.
(2) The solid-state imaging device according to (1), wherein the phase difference detection pixel includes a light-shielding film that covers a substantially half region of the pixel between the substrate and the light incident side.
(3) The solid-state imaging device according to (1) or (2), wherein the phase difference detection pixel has a transparent film at a position corresponding to a position where the organic photoelectric conversion film is removed.
(4) The solid-state imaging device according to (3), wherein the transparent film is made of a material having a high light transmittance in a visible light region.
(5) The solid-state imaging device according to (3) or (4), wherein the transparent film is made of a material that absorbs less light.
(6) The solid-state imaging device according to any one of (3) to (5), wherein the transparent film is made of a material having low moisture and gas permeability.
(7) The solid-state imaging device according to any one of (3) to (6), wherein the transparent film is made of a material having high flatness.
(8) The solid-state imaging device according to any one of (1) to (7), wherein the phase difference detection pixel includes at least one of an upper electrode and a lower electrode.
(9) The solid phase detector according to any one of (1) to (8), wherein the phase difference detection pixel in the pair of pixels is disposed adjacent to the phase difference detection pixel in the other pair of pixels. Imaging device.
(10) The phase difference detection pixels in the pair of pixels are arranged at adjacent positions on the left and right sides of the phase difference detection pixels in the other pair of pixels according to any one of (1) to (9). Solid-state imaging device.
(11) The phase difference detection pixels in the pair of pixels are arranged at adjacent positions above and below the phase difference detection pixels in the other pair of pixels. Solid-state imaging device.
(12) The phase difference detection pixel in the pair of pixels is disposed at an obliquely adjacent position with the phase difference detection pixel in the other pair of pixels. Solid-state imaging device.
(13) The solid-state imaging device according to any one of (1) to (12), wherein the organic photoelectric conversion film absorbs green light.
(14) The solid-state imaging device according to any one of (1) to (13), wherein a plurality of the photoelectric conversion units in at least one of the imaging pixels and the phase difference detection pixels are stacked in a depth direction. .
(15) a substrate on which a photoelectric conversion unit is formed;
An imaging region composed of a plurality of pixels arranged two-dimensionally on the substrate,
The plurality of pixels include an imaging pixel formed between the substrate and the light incident side, which uses an organic photoelectric conversion film that absorbs light in a certain wavelength band, and the substrate and the light incident side. A solid-state imaging device including a pair of pixels including a phase difference detection pixel from which the formed organic photoelectric conversion film is removed;
A signal processing circuit for processing an output signal output from the solid-state imaging device;
And an optical system that makes incident light incident on the solid-state imaging device.

1 solid-state imaging device, 2 pixels, 3 pixel area, 11 semiconductor substrate, 21 imaging pixels, 22 phase difference detection pixels, 31 semiconductor substrate, 32 Si PD, 33 interlayer film, 34 light shielding film, 35 light shielding film, 36 lower electrode , 37 organic photoelectric conversion film, 38 upper electrode, 51, 52, 61, 62 Si PD, 71 upper electrode, 72 transparent film, 111 interlayer film, 112 resist, 113 on-chip lens, 131 photosensitive material resin, 132 resist, 133 Interlayer film, 141 photosensitive resin, 300 electronic equipment, 301 solid-state imaging device, 302 optical lens, 303 shutter device, 304 drive circuit, 305 signal processing circuit

Claims (15)

A substrate on which a photoelectric conversion unit is formed;
An imaging region composed of a plurality of pixels arranged two-dimensionally on the substrate,
The plurality of pixels include an imaging pixel formed between the substrate and the light incident side, which uses an organic photoelectric conversion film that absorbs light in a certain wavelength band, and the substrate and the light incident side. A solid-state imaging device including a pair of pixels including a phase difference detection pixel from which the formed organic photoelectric conversion film is removed. The solid-state imaging device according to claim 1, wherein the phase difference detection pixel includes a light shielding film that covers a substantially half region of the pixel between the substrate and the light incident side. The solid-state imaging device according to claim 1, wherein the phase difference detection pixel has a transparent film at a position corresponding to a position where the organic photoelectric conversion film is removed. The solid-state imaging device according to claim 3, wherein the transparent film is made of a material having a high light transmittance in a visible light region. The solid-state imaging device according to claim 3, wherein the transparent film is made of a material that absorbs little light. The solid-state imaging device according to claim 3, wherein the transparent film is made of a material having low moisture and gas permeability. The solid-state imaging device according to claim 3, wherein the transparent film is made of a material having high flatness. The solid-state imaging device according to claim 2, wherein the phase difference detection pixel has at least one of an upper electrode and a lower electrode. The solid-state imaging device according to claim 1, wherein the phase difference detection pixel in the pair of pixels is disposed adjacent to the phase difference detection pixel in another pair of pixels. The solid-state imaging device according to claim 9, wherein the phase difference detection pixels in the pair of pixels are arranged at adjacent positions on the left and right of the phase difference detection pixels in the other pair of pixels. The solid-state imaging device according to claim 9, wherein the phase difference detection pixels in the pair of pixels are arranged at positions adjacent to the phase difference detection pixels in the other pair of pixels. The solid-state imaging device according to claim 9, wherein the phase difference detection pixel in the pair of pixels is disposed at an obliquely adjacent position to the phase difference detection pixel in the other pair of pixels. The solid-state imaging device according to claim 1, wherein the organic photoelectric conversion film absorbs green light. The solid-state imaging device according to claim 1, wherein a plurality of the photoelectric conversion units in at least one of the imaging pixels and the phase difference detection pixels are stacked in a depth direction. A substrate on which a photoelectric conversion unit is formed;
An imaging region composed of a plurality of pixels arranged two-dimensionally on the substrate,
The plurality of pixels include an imaging pixel formed between the substrate and the light incident side, which uses an organic photoelectric conversion film that absorbs light in a certain wavelength band, and the substrate and the light incident side. A solid-state imaging device including a pair of pixels including a phase difference detection pixel from which the formed organic photoelectric conversion film is removed;
A signal processing circuit for processing an output signal output from the solid-state imaging device;
And an optical system that makes incident light incident on the solid-state imaging device.

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