[go: up one dir, main page]

WO2016175365A1 - Procédé de formation de film de protection contre les ondes électromagnétiques de boîtier de semi-conducteur en utilisant une poche - Google Patents

Procédé de formation de film de protection contre les ondes électromagnétiques de boîtier de semi-conducteur en utilisant une poche Download PDF

Info

Publication number
WO2016175365A1
WO2016175365A1 PCT/KR2015/004829 KR2015004829W WO2016175365A1 WO 2016175365 A1 WO2016175365 A1 WO 2016175365A1 KR 2015004829 W KR2015004829 W KR 2015004829W WO 2016175365 A1 WO2016175365 A1 WO 2016175365A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor package
pocket
tray
shielding film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2015/004829
Other languages
English (en)
Korean (ko)
Inventor
김창수
이민진
김종운
김봉석
양원석
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cni Technology Inc
Original Assignee
Cni Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cni Technology Inc filed Critical Cni Technology Inc
Publication of WO2016175365A1 publication Critical patent/WO2016175365A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present invention relates to a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket, and more particularly, to an electromagnetic wave shielding film (BGA) type solder package having solder balls or a land grid array (LGA) type semiconductor package having irregularities on land.
  • BGA electromagnetic wave shielding film
  • LGA land grid array
  • the present invention relates to a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket that can shield or prevent malfunction of the device by external electromagnetic waves.
  • Semiconductor packages are widely used in various fields such as smartphones, displays, home appliances, automobiles, industrial devices, and medical devices. Recently, miniaturization, light weight, and thinness are increasing. The importance of electromagnetic shielding of semiconductor packages is increasing. Therefore, various countermeasures for electromagnetic shielding have been proposed, and they were initially manufactured as a metal shield (Shield Iid) and mounted on a semiconductor package.
  • shield Iid metal shield
  • the film quality has recently been excellent due to a problem in which it is impossible to apply to a package having problems with etching solution or chemical treatment, or due to a problem of poor coating efficiency and a thick and uneven film quality.
  • the sputtering electromagnetic shielding film is formed to form a uniform film with the same or better electromagnetic shielding function, excellent adhesion to package mold, and excellent environmental problems, even with a thickness of 1/5 ⁇ 1/10 or less than the conventional proposed method. have.
  • a LGA (Land Grid Array) package composed of land-type metal electrodes on a lower surface which can contact the main electrode of the main board instead of a pin, and packages the semiconductor by directly mounting the chip on a silicon wafer.
  • WLP Wafer Level Package
  • BGA All Grid Array
  • Sputtering is one of the essential processes in the electromagnetic wave shielding film formation in recent years.
  • an adhesive shield is attached to the upper surface of a tray, a semiconductor package is loaded thereon, and then pushed with a roller to sputter the electromagnetic wave shielding film. The process went on.
  • the thickly formed shielding film for electromagnetic shielding Due to the characteristic of the thickly formed shielding film for electromagnetic shielding, it is made in a high temperature state for a long time, and thus the adhesive tape is pressed or combusted on the side and bottom surfaces of the semiconductor package due to the adhesive component of the adhesive tape during the sputtering deposition process. Another problem is that the semiconductor package may be contaminated.
  • the present applicant has received a patent application for a method and apparatus for sputtering a semiconductor package using a liquid adhesive, and in the above-mentioned patent (No. 10-1479248), the adhesion of the semiconductor package is By forming an easy adhesive pad using a liquid adhesive, it is possible to prevent the semiconductor package from being damaged when the semiconductor package is separated from the tray, to solve the problem of contamination during the manufacturing process, and to improve productivity by automation.
  • the pressure-sensitive adhesive pad formed of the liquid adhesive in the above-described patent has less irregularities in the semiconductor package, that is, in the case of the LGA having no electrode step or a small land-type package, the above problems are overcome, but the irregularities in the lower surface of the package are large.
  • the BGA package having solder balls on the bottom surface of the package there is a problem that it is too difficult to be applied to the electromagnetic shielding film sputtering deposition process.
  • the semiconductor package may be formed by depositing the upper and fourth sides of various types of semiconductor packages regardless of the uneven surface size of the semiconductor package or the solder ball size of the lower surface of the BGA semiconductor package.
  • the present invention provides a method for forming an electromagnetic wave shielding film for a semiconductor package using pockets that follow recesses and depressions on a lower surface of the adhesive pad to prevent or prevent deposition contamination and to easily separate the semiconductor package after deposition.
  • a method for forming an electromagnetic shielding film of a semiconductor package using a pocket A step of confirming the external structure of the semiconductor package; Preparing a tray for loading, attaching, and transferring the semiconductor package identified in step A; C step of providing a pressure-sensitive adhesive ( ⁇ ⁇ ) on the top side (Top Side) of the tray prepared in step B; Step D for preparing a stamp (Stamp) for forming a pocket (pocket) on the upper surface of the pressure-sensitive adhesive provided in step C; E step of forming a pocket on the upper surface of the pressure-sensitive adhesive material using the stamp prepared in step D; And a step F of loading the semiconductor package having the appearance structure confirmed in the step A into the pocket through a loading means; It may be characterized by including a.
  • the semiconductor package is a LGA (Land Grid Array) semiconductor package consisting of a land-shaped metal electrode on the lower surface or a BGA (Ball Grid Array Array) semiconductor package composed of a metal electrode of the solder ball shape on the lower surface It may also be a feature.
  • LGA Land Grid Array
  • BGA All Grid Array Array
  • the structure of the tray may be determined by determining the unevenness or solder ball size of the bottom side of the semiconductor package.
  • the tray for loading, attaching and transporting the semiconductor package may be another feature that is formed in a plane and is heat resistant.
  • an ejector hole through which an ejector pin may pass through the tray for loading, attaching, and transferring the semiconductor package in step B. It may also be another feature that the tray is provided with an eject hole.
  • the tray for loading, attaching and transporting the semiconductor package in the step B the discharge hole and the discharge hole opening and closing device for discharging the outgas that may be generated in the process of forming the pocket or the sputtering process
  • the tray is provided.
  • the eject hole and the eject pin may be characterized in that one or more are provided in correspondence to one of the semiconductor packages.
  • the discharge hole and the discharge hole opening and closing device may be characterized in that one or more are provided respectively corresponding to one of the semiconductor package.
  • the pressure-sensitive adhesive is a liquid adhesive
  • the liquid adhesive may be applied to the entire top surface of the tray formed in a flat surface, and surface leveling may be another feature.
  • the adhesive material is a liquid adhesive
  • the tray is provided with an ejector hole
  • the liquid adhesive is linearly applied to the upper surface of the tray provided with the ejector hole in a grid pattern and surface leveling (Surface leveling) processing may be another feature.
  • the pressure-sensitive adhesive is a liquid adhesive
  • the tray is provided with an outgas discharge hole and the discharge hole opening and closing device
  • the discharge hole by using the discharge hole opening and closing device to block the discharge hole
  • Another feature may be that the liquid adhesive is applied to the upper surface of the tray evenly and the surface leveling treatment is performed.
  • the pressure-sensitive adhesive is a liquid adhesive
  • the step C CA step of applying the liquid adhesive on the upper surface of the tray;
  • the pressure-sensitive adhesive is a silicon sheet
  • step C a silicon sheet having a uniform thickness and adhesiveness on the upper surface and the lower surface is flat on the upper surface of the tray. It may be another feature to provide the adhesive by adhering.
  • the protective film is attached to the upper and lower surfaces of the silicon sheet (sheet), it may be another feature that the protective film is attached to the upper surface of the tray by removing.
  • an ejector hole through which an ejector pin may pass may pass through the tray for loading, attaching and transferring the semiconductor package in step B. It may also be another feature that the tray is provided with an eject hole.
  • the liquid adhesive is applied and surface leveling (Surface leveling) so that the thickness of the liquid adhesive applied to the upper surface of the tray is formed thicker than the thickness of the unevenness of the semiconductor package or the solder ball of the semiconductor package. ) May be another feature.
  • the pressure-sensitive adhesive is a silicon sheet
  • the thickness of the silicon sheet is formed to be thicker than the thickness of the unevenness of the semiconductor package or the solder ball of the semiconductor package.
  • step D it may be another feature to form a hole of the grid pattern in the silicon sheet.
  • the hole of the lattice pattern formed in the silicon sheet in step D may be formed to be smaller than the bottom surface of the semiconductor package to be loaded onto the tray in step F. .
  • the adhesive material may be a liquid adhesive
  • the stamp in step D may be another feature that the stamp has a structure corresponding to the area of the lower surface of the semiconductor package identified in step A.
  • the stamp may be another feature that the protruding surface of the stamp having a structure corresponding to the area of the lower surface of the semiconductor package is a flat surface.
  • the protruding surface of the stamp having a structure corresponding to the area of the semiconductor package may further have a structure corresponding to the unevenness of the semiconductor package or the size of the solder balls of the semiconductor package.
  • a plurality of the stamps may be provided to form pockets corresponding to the plurality of semiconductor packages loaded on the tray.
  • the pressure-sensitive adhesive may be a silicon sheet
  • the stamp in step D may be a stamp having a structure corresponding to the area of the lower surface of the semiconductor package found in step A.
  • the stamp may be another feature that the protruding surface of the stamp having a structure corresponding to the area of the lower surface of the semiconductor package is a flat surface.
  • the protruding surface of the stamp having a structure corresponding to the area of the lower surface of the semiconductor package may be another feature having a structure corresponding to the unevenness of the semiconductor package or the size of the solder ball of the semiconductor package.
  • a plurality of the stamps may be provided to form pockets corresponding to the plurality of semiconductor packages loaded on the tray.
  • the pressure-sensitive adhesive is a liquid adhesive, in the step E, by pressing the adhesive provided on the upper surface of the tray with the stamp prepared in the step D to cure the secondary to form a pocket on which the semiconductor package can be loaded. It may also be another feature.
  • the pressure-sensitive adhesive is a liquid adhesive, in step E, by pressing the adhesive material provided on the upper surface of the tray with the stamp prepared in step D completely cured to form a pocket on which the semiconductor package can be loaded. It may also be another feature.
  • the degassing treatment is performed while the pocket for loading the semiconductor package is formed while the liquid adhesive is completely cured.
  • the adhesive material is a silicon sheet
  • step E by pressing the adhesive material provided on the upper surface of the tray with the stamp prepared in step D, the first curing is performed to form a pocket in which a package can be loaded. It may also be a feature.
  • the pressure-sensitive adhesive material is a silicon sheet, and in step E, by pressing the adhesive material provided on the upper surface of the tray with the stamp prepared in step D flatly completely cured to form a pocket in which a package can be loaded. It may also be characterized.
  • the silicon sheet may be completely cured while the pocket for loading the semiconductor package is formed, and degassing may be performed.
  • the semiconductor package may be loaded so that the bottom surface of the semiconductor package coincides with the pocket formed by completely curing in the step E.
  • step F the step of loading the semiconductor package so that the bottom surface of the semiconductor package coincides with the pocket formed by curing in the step E, and completely curing while pressing the semiconductor package using a pressing device; It may also be another feature to include a further.
  • the pressing device used in the step G the lower heater which is located under the tray, and heats the tray; A pressing plate for pressing the semiconductor package located on an upper surface of the pocket; And a pressing plate height adjusting device positioned at a side of the pressing plate and adjusting a height of the pressing plate of the semiconductor package. It may be another feature to include a.
  • a plurality of vacuum suction holes are provided in the lower heater of the pressing device used in the step G, and the pressing device may vacuum suction the tray to correct and flatten the warpage of the tray. It can also be another feature.
  • step G it may be another feature to discharge the outgas generated while heating the tray so that the pocket is completely cured by using the lower heater of the pressing device.
  • the pressing device used in the step G may be located on top of the pressing plate, and further comprising an upper heater for heating the pressing plate.
  • the pressing plate is heated so that the pocket is completely cured by using the upper heater of the pressing device, and at the same time, the oil discharged from the adhesive material is suppressed from being attached to the pressing plate.
  • the side of the pressing plate of the pressing device is provided with a plurality of exhaust holes, it may be another feature that the outgas generated in the curing process is discharged to the exhaust hole.
  • step G when pressing the semiconductor package by using the pressing plate may be another feature to adjust the degree of unevenness of the semiconductor package or the solder ball of the semiconductor package is inserted.
  • step G the degassing apparatus may be further used so that outgassing is completely performed when the semiconductor package is pressed by using the pressing plate.
  • a spring capable of applying pressure to the semiconductor package to suppress the influence of planar accumulation tolerances of the tray, each semiconductor package, and the pressing plate is further added to the pressing plate. Installing may be another feature.
  • step G in the pressing plate of the pressing device, further installing a load cell and a pressure regulating device on the pressing plate in order to suppress the influence of the plane accumulation tolerance of the tray, each of the semiconductor package and the pressing plate. It may also be a feature.
  • the method may further include a step H of sputtering the semiconductor package loaded in the step F.
  • the electromagnetic wave shielding film forming method of the semiconductor package using the pocket according to the present invention is a semiconductor package when the deposition on the top and the four sides in various types of semiconductor package irrespective of the uneven size of the bottom surface of the semiconductor package or the solder ball size of the bottom surface of the BGA semiconductor package.
  • top and four sides of the semiconductor package can be evenly and precisely deposited to shield electromagnetic waves generated by the semiconductor package or to prevent malfunction of the device by external electromagnetic waves, thereby improving quality.
  • the contact area between the adhesive and the lower surface of the semiconductor package can be minimized, it can be easily unloaded while preventing damage to the solder balls when separating or separating the semiconductor package, thereby preventing damage to the semiconductor package. In addition, it can be automated and has the effect of improving the production yield.
  • FIG. 1 is a flowchart schematically illustrating a method of forming an electromagnetic shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view schematically illustrating a tray shape according to a semiconductor package exterior structure and an adhesive material provided on an upper surface of the tray in a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view schematically illustrating the formation of an adhesive pad by applying a liquid adhesive, which is an adhesive, on the upper surface of the tray of the present invention, and curing the first adhesive.
  • a liquid adhesive which is an adhesive
  • FIG. 4 is a cross-sectional view schematically illustrating a stamp and a pocket in a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view schematically illustrating a semiconductor package loaded in a pocket formed on an upper surface of an adhesive in the method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.
  • 6 to 9 are cross-sectional views schematically illustrating a pressing device pressing a semiconductor package on an upper side of the semiconductor package in the method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.
  • FIG. 10 is a schematic cross-sectional view of a sputtered semiconductor package in a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.
  • FIG. 1 is a flowchart schematically showing a method for forming an electromagnetic shielding film of a semiconductor package using a pocket according to an embodiment of the present invention
  • Figure 2 is a semiconductor package in a method for forming an electromagnetic shielding film of a semiconductor package using a pocket according to an embodiment of the present invention
  • 3 is a cross-sectional view schematically illustrating a shape of a tray according to an external structure and a state in which an adhesive is provided on an upper surface of the tray
  • FIG. 3 is a liquid adhesive applied to an upper surface of the tray of the present invention, and then hardened to form an adhesive pad.
  • FIG. 4 is a cross-sectional view schematically showing the shape of the stamp and the pocket in the method for forming an electromagnetic shielding film of the semiconductor package using the pocket according to an embodiment of the present invention
  • Figure 5 is an embodiment of the present invention
  • Electromagnetic shielding film forming method using semiconductor package pocket according to FIG. 6 is a cross-sectional view schematically illustrating a semiconductor package loaded in a pocket formed on an upper surface of an adhesive material
  • FIGS. 6 to 9 are top views of a semiconductor package in a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.
  • 10 is a cross-sectional view schematically illustrating a pressing device of a semiconductor package
  • FIG. 10 is a cross-sectional view schematically illustrating a sputtered semiconductor package in a method for forming an electromagnetic shielding film of a semiconductor package using a pocket according to an exemplary embodiment of the present invention.
  • the method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket basically includes steps A to F.
  • it may further include a G stage, and more preferably, may further include an H stage.
  • the semiconductor package is briefly described as briefly described as a package.
  • step S110 is a step of checking the appearance structure of the semiconductor package.
  • a semiconductor package in step A110 a semiconductor package in step A110, a LGA (Land Grid Array) semiconductor package having a land-shaped metal electrode on the bottom surface of the semiconductor package or a BGA (solder ball-shaped metal electrode formed on the bottom surface of the semiconductor package) Ball Grid Array) semiconductor package and the like.
  • LGA Land Grid Array
  • BGA soldder ball-shaped metal electrode formed on the bottom surface of the semiconductor package
  • Ball Grid Array Ball Grid Array
  • step A110 the size of the bottom side of the semiconductor package, the height of the sidewalls, the presence or absence of metal lines formed on the side surfaces, the form of the side surfaces, and the land shape of the bottom surface Determine the formation height of the adhesive pad (thickness of thickness) and attachment conditions, and the shape and structure of the tray by grasping the land protrusion level of the lower surface, the unevenness of the lower surface, the size of the solder ball attached to the lower surface, the placement and density of the solder ball. It is desirable to.
  • step S110 the external structure of the semiconductor package is confirmed in step S110.
  • Step B120 is a step of preparing a tray for loading, attaching, transferring or supporting the semiconductor package identified in step A110.
  • the tray for loading, attaching, and transporting the semiconductor package is preferably formed in a plane and has heat resistance.
  • the tray for loading, attaching, and transferring the semiconductor package is formed in a flat shape and is not thermally deformed to 250, and preferably has a flatness within 50 ⁇ m.
  • the tray for loading, attaching, and transferring the semiconductor package may include a semiconductor package having a large solder ball size at the bottom of the semiconductor package (S110), a semiconductor package having a large land protrusion step at the bottom of the semiconductor package, or a semiconductor package.
  • the tray for loading, attaching and transferring the semiconductor package in step B120 may be an ejector pin. It is preferable that the tray is provided with an ejector hole through which pins can pass.
  • the ejector pin may pass through a package having an area of more than 0.3mm in the solder ball of the BGA package or 25mm25mm in the bottom of the semiconductor package. It is preferable that a hole is provided.
  • the numerical values are examples, and the standards for providing the eject holes may vary according to various appearance structures of the semiconductor package or separation and separation methods of the packages.
  • the eject hole and the eject pin may be provided with one or a plurality of ejection pins based on one semiconductor package.
  • the out gas which may be generated in the pocket forming process or the sputtering process, may be discharged through the eject hole.
  • the tray provided with the ejector pin and the ejector hole is also preferable, and the following tray is also preferable. That is, the tray is provided with a discharge hole (not shown) and a discharge hole opening / closing device (not shown) for discharging out gas that may be generated during the pocket forming process or the sputtering process. It is desirable.
  • the outgas generated in the process of forming the pocket can be more effectively discharged.
  • the ejector hole and the ejector pin may be used as the discharge hole and the discharge hole opening and closing device or may be provided with the discharge hole and the discharge hole opening and closing device separately.
  • the degassing exhaust device may be mounted on the tray.
  • the degassing device is a device for discharging the outgas discharged through the discharge hole to the outside.
  • the degassing device When the degassing device is installed in the tray provided with the discharge hole and the opening / closing device, the degassing device exhausts the outgas discharged through the discharge hole to the outside, thereby more effectively removing the outgas.
  • a standard for providing the discharge hole may vary.
  • the discharge hole and the discharge hole opening and closing device may be in the form of one or a plurality of semiconductor package based.
  • step S120 the tray as described above is prepared.
  • step C (S130) is a step of preparing an adhesive material ( ⁇ ⁇ ) on the upper surface of the tray prepared in step B (S120).
  • the pressure-sensitive adhesive is a liquid adhesive
  • the liquid adhesive 120 is a pressure-sensitive adhesive on the top surface (Top Side) of the tray 110 formed in a plane It is preferable to apply the entire surface to the surface evenly and to perform a surface leveling treatment.
  • the liquid adhesive 120 may be uniformly applied to the top surface of the tray 110 formed in a flat surface, and may be treated to have a flatness within 30 ⁇ m after surface leveling.
  • squeegee (not shown) or flat bar (not shown) may be used to increase flatness.
  • the liquid adhesive 140 is lattice on the upper surface of the tray 130. It is preferable to apply the pattern linearly and to perform a surface leveling treatment.
  • the method of applying the liquid adhesive may vary depending on the size of the solder ball attached to the BGA semiconductor package or the area of the bottom surface of the semiconductor package, the land protrusion level of the LGA semiconductor package, and the unevenness of the bottom surface of the semiconductor package.
  • the tray in which the liquid adhesive 120 is formed in a flat plane as shown in FIG. It may also be applied to the entire surface of the 110.
  • the eject hole 135 is formed in the tray 130 as shown in FIG. It may be provided with the liquid adhesive 140 may be applied to the tray 130 in a lattice.
  • a dispenser may be used to linearly apply the liquid adhesive in a lattice pattern. (Not shown) may be used to linearly apply the liquid adhesive in a lattice pattern.
  • the discharge hole is closed with the opening and closing device (that is, closes the entrance and exit of the discharge hole), and the liquid adhesive is applied to the upper surface of the tray in a flat manner and the surface leveling is performed. You can also do it.
  • the discharge hole is provided to discharge the outgas that may be generated in the process of forming a pocket or the sputtering to be described later.
  • the C step (S130) is composed of a CA step and a CB step.
  • the CA step is a step of applying a liquid adhesive on the upper surface of the tray
  • the CB step may be referred to a step of semi-curing the liquid adhesive by primary curing the liquid adhesive applied in the CA step.
  • the CA step is applied to the liquid adhesive on the upper surface of the tray and surface leveling as described above.
  • the first step is to harden in the CB stage.
  • 1st Curing is the first hardening, and it is not hardened to harden completely, but hardening to lower the viscosity and increase the hardness.
  • liquid adhesive that is the adhesive material may be referred to as a semi-cured adhesive pad for convenience of description for the first curing. That is, even after several curing processes, the adhesive material which has undergone at least one curing may be referred to as an adhesive pad.
  • the primary curing temperature of the liquid adhesive is semi-cured with heat of 50 °C ⁇ 150 °C. More preferably, the first curing time of the liquid adhesive forms a semi-cured adhesive pad under conditions of 10 minutes with heat of 50 ° C to 150 ° C.
  • the numerical values are examples, and the primary curing temperature and time may vary according to various appearance structures of the package or separation and separation methods of the package.
  • primary hardening may be considered here as the order of hardening. Therefore, the primary curing of the silicone sheet to be described later and the primary curing of the liquid adhesive may be the same or different. This is because the silicone sheet is not in the liquid state, but the liquid adhesive is in the liquid state before the first curing.
  • the conditions of primary curing when forming a pocket using a silicone sheet to be described later as an adhesive are the conditions of primary curing when forming a pocket using a liquid adhesive as the adhesive. (Curing temperature, curing time, etc.) are the same, it is preferable to limit to limit and not to analyze. Understand the curing sequence occurring in the electromagnetic shielding film forming method using the semiconductor package pocket according to the present invention, the curing conditions (curing temperature, curing time, etc.) for each curing sequence can be set differently as needed, the same curing conditions ( Curing temperature, curing time, etc.) may be repeatedly performed once or more times.
  • FIG. 3 the concept of the first curing of the adhesive is schematically illustrated in a cross-sectional view.
  • reference numeral 210 denotes a tray formed in a plane
  • reference numeral 230 denotes a tray having an eject hole
  • reference numeral 220 denotes a liquid adhesive applied to the upper surface of the tray
  • reference numeral 240 denotes a tray.
  • the liquid adhesive is linearly coated in a lattice pattern on the upper surface of the tray provided with the eject hole.
  • step C an upper surface and a lower surface of the adhesive sheet are attached to the upper surface of the tray by attaching a sheet having a uniform thickness and adhesiveness to the upper surface of the tray. It is to provide an adhesive.
  • the protective film is attached to the upper and lower surfaces of the silicon sheet (sheet) is preferable because it can prevent the contamination of the silicon sheet by impurities as much as possible.
  • the protective film is preferable to remove the protective film and attach it to the upper surface of the tray.
  • the silicone sheet is excellent in formability and can be processed into a pad shape, there is no need for primary thermal curing.
  • the use of silicon with low vapor pressure in the silicon sheet can suppress outgassing during the sputtering process.
  • the tray for loading, attaching and transferring the semiconductor package in step B120 may be Preferably, the tray is provided with an ejector hole through which an ejector pin may pass.
  • a package having an ejector hole may be used for a package having an area in which the size of the solder ball of the BGA package exceeds 0.3 mm or the size of the bottom surface of the package exceeds 25 mm ⁇ 25 mm. It is preferable.
  • the numerical values are examples, and the standards for providing the eject holes may vary according to the appearance structure of the various lower surfaces of the package or the separation and separation methods of the packages.
  • the thickness of the liquid adhesive applied to the upper surface of the tray is thicker than the thickness of the unevenness of the semiconductor package or the solder ball size of the semiconductor package. It is preferable to apply a liquid adhesive to form and to perform a surface leveling (Surface leveling) process. At this time, for example, the liquid adhesive thickness is preferably formed to be approximately 100 ⁇ 500um thicker than the thickness of the unevenness of the semiconductor package.
  • the thickness of the silicon sheet is preferably about 100 to 500 um thicker than the thickness of the unevenness of the semiconductor package or the size of the solder balls of the semiconductor package.
  • the numerical values are taken as an example and the thickness of the pressure-sensitive adhesive material may vary depending on the appearance structure and the shape of the various lower surfaces of the package.
  • step C130 an adhesive material is provided on the top side of the tray.
  • step D140 is a step of preparing a stamp for forming a pocket (pocket) on the upper surface of the pressure-sensitive adhesive provided in step C130 (S130).
  • the stamp in step D (S140) is preferably a stamp having a structure corresponding to the area of the lower surface of the semiconductor package identified in step A (S110).
  • the protrusion surface of the stamp having a structure corresponding to the area of the bottom surface of the semiconductor package is preferably a flat surface or a structure corresponding to the unevenness of the semiconductor package or the size of the solder ball of the semiconductor package.
  • a plurality of stamps be provided to form pockets corresponding to the plurality of semiconductor packages to be loaded on the tray.
  • the electromagnetic shielding film sputtering process can be performed on a plurality of semiconductor packages at once.
  • FIG. 4A An example of such a stamp 350 (see FIG. 4A) is schematically illustrated in FIG. 4A.
  • the protrusion surface of the stamp 350 is formed to protrude vertically (FIG. 4B).
  • the pocket 321 may be formed (see FIG. 4C) so that the side portion of the pocket is vertical.
  • the pocket 321 may be formed such that the side portion of the pocket is inclined as shown in FIG.
  • the semiconductor package may be loaded onto an inclined surface (surface formed obliquely in the pocket, see FIG. 4D) of the pocket 321 formed using the stamp.
  • the semiconductor package 400 When the semiconductor package is loaded in a pocket having an inclined surface as shown in FIG. 4D, the semiconductor package 400 is loaded in the pocket as shown in FIG. 5C.
  • the contact area between the semiconductor package 400 and the pocket 321 is smaller as shown in FIG. It can be easily removed.
  • FIG. 4 illustrates an example of a stamp, and in addition to the form illustrated in FIG. 4, various types of stamps may be used as needed.
  • step C Referring to the case of using the silicon sheet as the adhesive in step C (S130) as follows.
  • the tray for loading, attaching and transferring the semiconductor package in step B is A tray having an ejector hole through which the ejector pins can pass may be used.
  • the upper and lower surfaces are flat and have a uniform thickness and are adhered to the upper surface of the tray by using an adhesive silicone sheet having an adhesive.
  • holes or pockets of a lattice pattern may be formed in the silicon sheet.
  • the hole of the grid pattern to be formed in the silicon sheet is preferably formed to be smaller in size than the lower surface of the semiconductor package to be loaded to the upper side of the tray in step S160 to be described later.
  • the stamp for forming the pocket in the silicon sheet is preferably a stamp having a structure corresponding to the bottom surface area of the semiconductor package identified in step A110, and the protrusion having a structure corresponding to the bottom area of the semiconductor package. More preferably, the surface is flat or has a structure corresponding to the unevenness of the semiconductor package.
  • a plurality of stamps are provided to form pockets corresponding to the plurality of semiconductor packages to be loaded onto the tray.
  • a plurality of pockets are formed by a plurality of stamps, and a plurality of semiconductor packages can be loaded in a plurality of pockets, it is preferable because an electromagnetic wave shielding film sputtering process can be performed on a plurality of semiconductor packages at one time.
  • FIG. 4 An exemplary view of such a stamp 350 is schematically shown in FIG.
  • the stamp protruding surface corresponding to the side surface of the package, such as the stamp 350 as shown in (a) of FIG. 4 is formed vertically (see (c) of FIG. 4) or (d) of FIG.
  • the package may be loaded (see (c) of FIG. 5) on the inclined surface of the pocket formed by inclining. Therefore, FIGS. 4 and 5 illustrate examples and may include various types of stamps.
  • a stamp 350 is prepared to form a pocket on the upper surface of the adhesive material 320 provided in the tray 310 in step S140.
  • the pocket is formed on the upper surface of the adhesive using the stamp prepared in the step S140.
  • step E the adhesive material prepared in step C (S130) is a liquid adhesive
  • step E the adhesive material 320 provided on the upper surface of the tray 310 with the stamp 350 prepared in step D (S140) (FIG. 4 ( Curing while pressing flat (as shown schematically in b) forms pockets into which the semiconductor package can be loaded.
  • the curing in the present step D (S140) may be referred to as secondary curing.
  • step S140 the pressure-sensitive adhesive 320 prepared on the upper surface of the tray 310 with the stamp 350 prepared in step S140 (as shown schematically in FIG. 4 (b)) while completely hardening ( Or curing performed last several times during curing, to form a pocket into which the semiconductor package can be loaded.
  • the adhesive material that is, silicon sheet
  • the adhesive material provided on the upper surface of the tray 310 with the stamp 350 prepared in step D (S140) ( First pressing while flattening 320 forms a pocket 321 into which the package can be loaded.
  • step S140 (as schematically shown in FIG. 4 (b)). Curing sequentially) to form a pocket 321 into which the package can be loaded.
  • adhesive i.e. silicon sheet
  • the silicon sheet as the adhesive material is completely cured to form a pocket 321 through which the semiconductor package can be loaded, and the degassing treatment to remove the outgas discharged while curing is also preferably performed.
  • the first or second curing may be regarded as the order of curing. Therefore, the primary curing of the silicone sheet and the primary curing of the liquid adhesive may be the same or different. This is because the silicone sheet is not in the liquid state, but the liquid adhesive is in the liquid state before the first curing.
  • the conditions of primary curing (curing temperature, curing time, etc.) when forming a pocket using a silicone sheet as an adhesive material are the conditions of the primary curing when forming a pocket using a liquid adhesive as the adhesive (curing temperature).
  • Curing time, etc. is preferably the same and not interpreted. Understand the curing sequence occurring in the electromagnetic shielding film forming method using the semiconductor package pocket according to the present invention, the curing conditions (curing temperature, curing time, etc.) for each curing sequence can be set differently as needed, the same curing conditions ( Curing temperature, curing time, etc.) may be implemented.
  • step E (S150) basically in step E (S150) to form a pocket using a stamp on the upper surface of the adhesive material provided on the tray. And in the pocket forming process, it is also possible to selectively perform a curing treatment for the adhesive material as needed.
  • step S160 the semiconductor package whose exterior structure is confirmed in step S110 is loaded into a pocket through loading means.
  • step F160 the semiconductor package is loaded to match the bottom surface of the semiconductor package in a pocket formed by completely curing the adhesive in step E150.
  • step F160 the semiconductor package is loaded to coincide with the bottom surface of the semiconductor package in the pocket formed by secondary curing in step S150.
  • step F160 the semiconductor package is loaded to coincide with the bottom surface of the semiconductor package in the pocket formed by completely curing in step E150.
  • step F160 the semiconductor package is loaded to coincide with the bottom surface of the semiconductor package in the pocket formed by secondary curing in step S150.
  • the adhesive material liquid adhesive or silicone sheet
  • the adhesive material may be completely cured while forming the pocket in step E150, or may be cured to a degree having some viscosity and hardness as necessary. Regardless of the degree of curing, the semiconductor package is loaded so that the bottom surface of the semiconductor package coincides with the pocket formed on the adhesive.
  • the semiconductor package 400 is loaded such that the bottom surface of the semiconductor package 400 coincides with a pocket formed in the adhesive material 320 provided in the tray 310.
  • step A (S110) to step F160 (S160) described as described above may be made by further including a G step (S170), or may further comprise a further H step (S180).
  • step (S170) the bottom surface of the semiconductor package in step F160 (S160) for the pocket formed by curing in the step E150 (secondary curing when using a liquid adhesive, primary curing when using a silicon sheet)
  • step E150 secondary curing when using a liquid adhesive, primary curing when using a silicon sheet
  • a semiconductor package is loaded in a pocket formed in the adhesive material 320 in the tray 310, and the adhesive is pressed while the pressing plate 500 is pressed from the upper side of the semiconductor package. It is to harden the ash 320.
  • 6 to 9 are cross-sectional views schematically showing a pressing device of the pressing device on the upper side of the semiconductor package in the method for forming an electromagnetic shielding film using the semiconductor package pocket according to the embodiment of the present invention.
  • the pressing device used in step G170 is located at the bottom of the tray 310 (see FIG. 6), and is located on the upper surface of the lower heater 611 (see FIG. 6) and the pocket for heating the tray 310 (see FIG. 6). And a pressing plate 650 (see FIG. 6) for pressing the semiconductor package 400 (see FIG. 6) located and a pressing plate height adjusting device 652 (see FIG. 6).
  • the pressing plate height adjusting device 652 is a device for adjusting the height of the pressing plate 650 (see FIG. 6) of the semiconductor package.
  • Secondary curing is performed while pressing the upper surface of the semiconductor package 400 with the pressing plate 650.
  • the side of the pressing plate of the pressing device is provided with a plurality of exhaust holes, it is preferable that the outgas generated in the curing process is discharged through the exhaust holes.
  • a plurality of exhaust holes are provided at the edge of the pressing plate 650 and the pressing plate height adjusting device 652 is installed to adjust the degree of insertion of the solder ball of the semiconductor package 400 into the pocket formed on the adhesive pad 320. .
  • the semiconductor package 400 is Adjust the pressure to 2-5 Newtons.
  • the degree of unevenness of the semiconductor package or the degree of insertion of the solder balls of the semiconductor package into the (adhesive) may be adjusted.
  • secondary curing means complete curing, and it is preferable that outgassing is completely made through a plurality of exhaust holes from the adhesive pad 620 or the silicon sheet 620.
  • a plurality of vacuum exhaust holes 612 are provided in the lower heater 611 (see FIG. 6) of the pressing device, and the tray 310 (see FIG. 6) is vacuum-adsorbed to provide a tray ( 310, see FIG. 6, it is preferable that the warpage can be corrected and flattened.
  • step G170 using the lower heater 611 (see FIG. 6) of the pressing device, the pocket (in other words, the pocket formed adhesive material) is generated while heating the tray 310 (see FIG. 6) to completely cure. It is preferable to discharge outgas.
  • complete curing is performed by heating at a temperature of 100 ° C. to 200 ° C. for 10 minutes or less in the lower heater 611 installed at the bottom of the tray 610. 612 is preferably treated to be discharged.
  • the pressing device further includes an upper heater 655 (see FIG. 6) positioned above the pressing plate and heating the pressing plate.
  • step G while the pressing plate is heated to completely cure the pocket by using the upper heater of the pressing device, the outgas discharged from the adhesive can be prevented from adhering to the pressing plate.
  • the upper heater 655 installed on the pressing plate 650 promotes secondary curing, that is, complete curing of the adhesive pad 620, and suppresses the outgas discharged in the process from sticking to the pressing plate 650, and exhausts. It may be discharged through the hole 612 to prevent contamination during the process.
  • a spring is applied to the pressing plate of the pressing device, or the load cell and the pressure regulator are mounted on the pressing plate. It is preferable.
  • FIG. 7 to 9 are cross-sectional views schematically showing an embodiment of the pressing plate of the pressing device on the upper side of the semiconductor package in the method for forming an electromagnetic shielding film using the semiconductor package pocket according to the embodiment of the present invention.
  • FIG. 7 shows the individual package 400 to suppress the influence of the planar cumulative tolerance of the tray 310 and each of the semiconductor packages 400 and the presser plate 750 in the presser plate 750 of the presser.
  • FIG. 7 shows the individual package 400 to suppress the influence of the planar cumulative tolerance of the tray 310 and each of the semiconductor packages 400 and the presser plate 750 in the presser plate 750 of the presser.
  • cross-sectional view showing an example in which a spring 753 that can apply pressure to a plurality of packages 400 is additionally installed on the pressing plate 750.
  • an individual package 400 or a plurality of packages may be used to suppress the influence of the planar cumulative tolerance of the tray 310 and each of the semiconductor packages 400 and the pressing plate 750.
  • a spring 753 may be additionally installed in the press plate 750 to apply pressure to the package 400.
  • reference numeral 755 denotes an upper heater
  • reference numeral 752 denotes a presser plate height adjusting device
  • reference numeral 611 denotes a lower heater
  • reference numeral 612 denotes a vacuum exhaust hole
  • reference numeral 320 denotes an adhesive material (adhesive pad).
  • FIG. 8 applies pressure to individual packages 400 or multiple packages 400 to suppress the effect of planar cumulative tolerances of tray 310 and each package 400 and press plate 850 on press plate 850. It is sectional drawing which showed the example which further installed the plate spring 853) which can be installed in the pressing board 850.
  • the individual package 400 is used to suppress the influence of the planar cumulative tolerance of the tray 310 and each semiconductor package 400 and the pressing plate 850.
  • a form in which the leaf springs 853 that can apply pressure to the plurality of packages 400 may be additionally installed on the pressing plate 850.
  • reference numeral 855 denotes an upper heater
  • reference numeral 852 denotes a pressing plate height adjusting device
  • reference numeral 611 denotes a lower heater
  • reference numeral 612 denotes a vacuum exhaust hole
  • reference numeral 620 denotes an adhesive pad.
  • FIG. 9 is a view of pressing the load cell 961 and the pressure regulating device 963 to suppress the influence of the stacked stacking tolerances of the tray 310 and each package 400 and the pressing plate 950 in the pressing plate 950 of the pressing device. It is sectional drawing which showed the example further installed in 950.
  • the load cell 961 and the pressure regulating device may be used to suppress the influence of the planar cumulative tolerances of the tray 310, the semiconductor package 400, and the pressing plate 950 in the pressing plate 950 of the pressing device. It is also preferable to form 963 in addition to the pressing plate 950.
  • the pressure regulating device 963 and the load cell 961 may perform the same function as the pressing plate height adjusting device. And the edge of the lid-shaped pressing plate 950 to secure a predetermined space so as not to contact the tray 310 to adjust the pressure applied to the package 930 through the pressure regulating device 963.
  • reference numeral 955 denotes an upper heater
  • reference numeral 611 denotes a lower heater
  • reference numeral 612 denotes a vacuum exhaust hole
  • reference numeral 320 denotes an adhesive pad.
  • Step H180 is a step of sputtering the semiconductor package loaded in step F160 to form an electromagnetic shielding film.
  • FIG. 10 is a schematic cross-sectional view of a sputtered semiconductor package in a method for forming an electromagnetic shielding film using pockets of a semiconductor package according to an embodiment of the present invention.
  • electromagnetic shielding films 1040 and 1090 are formed as shown in the cross-sectional view schematically illustrated in FIG. 10.
  • reference numerals 310 and 1060 denote trays
  • reference numerals 320 and 1070 denote adhesive pads
  • reference numerals 1030 and 1080 denote semiconductor packages
  • reference numeral 1065 denotes eject holes
  • reference numeral 1067 denotes eject pins. It is shown.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

La présente invention concerne un procédé de formation d'un film de protection contre les ondes électromagnétiques d'un boîtier de semi-conducteur en utilisant une poche, et selon la présente invention, le procédé de formation d'un film de protection contre les ondes électromagnétiques d'un boîtier de semi-conducteur comprend : une étape A consistant à contrôler une structure extérieure du boîtier de semi-conducteur ; une étape B consistant à préparer un plateau pour charger, fixer, et transporter le boîtier de semi-conducteur confirmé à l'étape A ; une étape C consistant à préparer un adhésif sensible à la pression sur le côté supérieur du plateau préparé à l'étape B ; une étape D consistant à préparer un tampon pour former une poche sur le côté supérieur de l'adhésif sensible à la pression préparé à l'étape C ; une étape E consistant à former la poche sur le côté supérieur de l'adhésif sensible à la pression en utilisant le tampon préparé à l'étape D ; et une étape F consistant à charger le boîtier de semi-conducteur dont la structure extérieure a été confirmée à l'étape A sur la poche par l'intermédiaire d'un moyen de charge.
PCT/KR2015/004829 2015-04-28 2015-05-14 Procédé de formation de film de protection contre les ondes électromagnétiques de boîtier de semi-conducteur en utilisant une poche Ceased WO2016175365A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2015-0059927 2015-04-28
KR1020150059927A KR101689018B1 (ko) 2015-04-28 2015-04-28 포켓을 이용한 반도체 패키지의 전자파 차폐막 형성 방법

Publications (1)

Publication Number Publication Date
WO2016175365A1 true WO2016175365A1 (fr) 2016-11-03

Family

ID=57198489

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/004829 Ceased WO2016175365A1 (fr) 2015-04-28 2015-05-14 Procédé de formation de film de protection contre les ondes électromagnétiques de boîtier de semi-conducteur en utilisant une poche

Country Status (3)

Country Link
KR (1) KR101689018B1 (fr)
TW (1) TWI552276B (fr)
WO (1) WO2016175365A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12163068B2 (en) 2020-05-07 2024-12-10 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use on uneven surfaces
WO2025038154A1 (fr) 2023-08-17 2025-02-20 Dow Silicones Corporation Composition de silicone durcissable en deux étapes et ses procédés de préparation et d'utilisation
US12454637B2 (en) 2020-05-07 2025-10-28 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use in protective films for (opto)electronic device fabrication

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102743134B1 (ko) * 2024-09-06 2024-12-17 (주)에스에스피 패키징 트레이용 마스킹 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08162517A (ja) * 1994-12-07 1996-06-21 Hitachi Ltd 試料ホルダ
JPH09148425A (ja) * 1995-11-29 1997-06-06 Hitachi Ltd 搬送テープおよびそれによって搬送される半導体集積回路装置
JP2005109416A (ja) * 2003-10-02 2005-04-21 Seiko Epson Corp 半導体装置製造用治具、半導体装置製造方法および半導体装置
KR101479251B1 (ko) * 2014-08-07 2015-01-05 (주) 씨앤아이테크놀로지 반도체 패키지의 전자파 차폐를 위한 스퍼터링 장치 및 이를 포함한 인라인 스퍼터링 증착 시스템
KR101479248B1 (ko) * 2014-05-28 2015-01-05 (주) 씨앤아이테크놀로지 액상 점착제를 이용한 반도체 패키지의 전자파 차폐를 위한 스퍼터링 방법 및 이를 위한 스퍼터링 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294826A (en) * 1993-04-16 1994-03-15 Northern Telecom Limited Integrated circuit package and assembly thereof for thermal and EMI management
US5796170A (en) * 1996-02-15 1998-08-18 Northern Telecom Limited Ball grid array (BGA) integrated circuit packages
US5986340A (en) * 1996-05-02 1999-11-16 National Semiconductor Corporation Ball grid array package with enhanced thermal and electrical characteristics and electronic device incorporating same
US6092281A (en) * 1998-08-28 2000-07-25 Amkor Technology, Inc. Electromagnetic interference shield driver and method
US20020096767A1 (en) * 2001-01-25 2002-07-25 Cote Kevin J. Cavity down ball grid array package with EMI shielding and reduced thermal resistance
US6707168B1 (en) * 2001-05-04 2004-03-16 Amkor Technology, Inc. Shielded semiconductor package with single-sided substrate and method for making the same
TWI378516B (en) 2003-11-10 2012-12-01 Chippac Inc Bump-on-lead flip chip interconnection
DE102006032925B8 (de) * 2006-07-15 2008-11-06 Schott Ag Elektronische Baugruppe und Verfahren zur Verkapselung elektronischer Bauelemente und integrierter Schaltungen
KR101501735B1 (ko) 2014-09-23 2015-03-12 제너셈(주) 반도체패키지의 ｅｍｉ 쉴드 처리공법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08162517A (ja) * 1994-12-07 1996-06-21 Hitachi Ltd 試料ホルダ
JPH09148425A (ja) * 1995-11-29 1997-06-06 Hitachi Ltd 搬送テープおよびそれによって搬送される半導体集積回路装置
JP2005109416A (ja) * 2003-10-02 2005-04-21 Seiko Epson Corp 半導体装置製造用治具、半導体装置製造方法および半導体装置
KR101479248B1 (ko) * 2014-05-28 2015-01-05 (주) 씨앤아이테크놀로지 액상 점착제를 이용한 반도체 패키지의 전자파 차폐를 위한 스퍼터링 방법 및 이를 위한 스퍼터링 장치
KR101479251B1 (ko) * 2014-08-07 2015-01-05 (주) 씨앤아이테크놀로지 반도체 패키지의 전자파 차폐를 위한 스퍼터링 장치 및 이를 포함한 인라인 스퍼터링 증착 시스템

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12163068B2 (en) 2020-05-07 2024-12-10 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use on uneven surfaces
US12454637B2 (en) 2020-05-07 2025-10-28 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use in protective films for (opto)electronic device fabrication
WO2025038154A1 (fr) 2023-08-17 2025-02-20 Dow Silicones Corporation Composition de silicone durcissable en deux étapes et ses procédés de préparation et d'utilisation

Also Published As

Publication number Publication date
KR101689018B1 (ko) 2016-12-22
TW201639086A (zh) 2016-11-01
TWI552276B (zh) 2016-10-01
KR20160128106A (ko) 2016-11-07

Similar Documents

Publication Publication Date Title
US5352294A (en) Alignment of a shadow frame and large flat substrates on a support
WO2016175365A1 (fr) Procédé de formation de film de protection contre les ondes électromagnétiques de boîtier de semi-conducteur en utilisant une poche
WO2020213836A1 (fr) Anneau de bord en sic
WO2015182816A1 (fr) Procédé de pulvérisation cathodique de boîtier de semi-conducteur utilisant un adhésif liquide pour blindage contre les interférences électromagnétiques, et appareil de pulvérisation cathodique associé
WO2017188785A1 (fr) Procédé à pressurisation servant à la fabrication de couche métallique monoatomique, structure de couche métallique monoatomique et appareil à pressurisation servant à la fabrication de couche métallique monoatomique
WO2015147509A1 (fr) Film adhésif temporaire pour tranche de semi-conducteur thermodurcissable, stratifié comprenant ce dernier et procédé de séparation de stratifié
WO2009113831A2 (fr) Ruban adhésif multifonctionnel pour emballage de semiconducteur et procédé de fabrication de dispositif semiconducteur au moyen de ce ruban
WO2015026026A1 (fr) Module de traitement, son procédé de fabrication et procédé de traitement de substrat utilisant un module de traitement
EP2656703A2 (fr) Carte de circuit imprimé et procédé de fabrication de cette carte
WO2018169250A1 (fr) Plaque métallique, masque de dépôt et procédé de fabrication associé
WO2020036360A1 (fr) Procédé de fabrication de masque à cadre intégré et cadre
WO2021091249A1 (fr) Dispositif capteur permettant de diagnostiquer un processus de semi-conducteur
WO2012087060A2 (fr) Carte de circuit imprimé et procédé de fabrication de cette carte
WO2018221876A1 (fr) Procédé de fabrication de carte à circuit imprimé souple et carte à circuit imprimé souple fabriquée au moyen de ce procédé
WO2013176519A1 (fr) Substrat de boîtier de semi-conducteurs, système de boîtier utilisant un tel substrat et son procédé de fabrication
KR101614721B1 (ko) 점착패드를 이용하여 전자파 차폐막 형성을 위한 반도체 패키지 부착 및 분리 방법
WO2022158894A1 (fr) Procédé de fabrication de carte de circuit imprimé
WO2019045336A1 (fr) Film adhésif de silicone de type sans substrat
WO2014115929A1 (fr) Boîtier étanche d'une puce à semi-conducteurs et procédé de traitement associé
WO2017222151A1 (fr) Composition de résine époxy pour sceller un dispositif à semi-conducteurs à l'état solide, matériau d'encapsulation la comprenant et boîtier à semi-conducteur
WO2016099044A1 (fr) Module de capteur tactile et son procédé de production
WO2015076465A1 (fr) Plage de test de semi-conducteur ayant des feuillets métalliques empilés et son procédé de fabrication
WO2011065776A2 (fr) Plateau et appareil de traitement de substrat utilisant ce plateau et procédé pour la fabrication de plateau
WO2024085727A1 (fr) Carte pour pièces électroniques, procédé de fabrication de carte pour pièces électroniques, et dispositif d'affichage et dispositif à semi-conducteur la comprenant
WO2017111374A1 (fr) Système de dépôt de type inter-retour réduisant les empreintes

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15890806

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15890806

Country of ref document: EP

Kind code of ref document: A1