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WO2015156475A1 - Capteur d'ion de transistor à effet de champ (fet) et système l'utilisant - Google Patents

Capteur d'ion de transistor à effet de champ (fet) et système l'utilisant Download PDF

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Publication number
WO2015156475A1
WO2015156475A1 PCT/KR2014/011375 KR2014011375W WO2015156475A1 WO 2015156475 A1 WO2015156475 A1 WO 2015156475A1 KR 2014011375 W KR2014011375 W KR 2014011375W WO 2015156475 A1 WO2015156475 A1 WO 2015156475A1
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WO
WIPO (PCT)
Prior art keywords
channel
fet
ion sensor
insulator layer
sensor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2014/011375
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English (en)
Korean (ko)
Inventor
성우경
이국녕
이민호
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Korea Electronics Technology Institute
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Korea Electronics Technology Institute
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Filing date
Publication date
Application filed by Korea Electronics Technology Institute filed Critical Korea Electronics Technology Institute
Priority to CN201480078421.4A priority Critical patent/CN106461601A/zh
Publication of WO2015156475A1 publication Critical patent/WO2015156475A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Definitions

  • the present invention relates to a field effect transistor ion sensor and a system using the same.
  • ionometers are classified into suction type and contact type.
  • the contact ionometer measures the anion ionized by radiation from minerals and the like, and operates as a radiation measuring principle (Geiger-Muller tube).
  • the suction type ion meter analyzes the amount of ions by measuring the charge amount of ions with a flat electrode using an electric field.
  • the suction ion meter uses two cylindrical (or flat plate) electrodes of different sizes and consists of a capacitor structure in which a small cylindrical electrode is placed in a large cylindrical electrode.
  • an electric field is formed by applying a high voltage between two cylindrical electrodes, and due to the voltage difference generated by the amount of charge that ions present in the air passing between the cylindrical electrodes are attracted and accumulated in the electrode along the direction of the electric field.
  • the amount of ions is detected by amplifying the minute current signal.
  • a suction device such as a fan that sucks air to determine the flow rate by making the flow of air sucked into the cylindrical electrode tube constant, and analyzing it together with the microcurrent signal generated by the accumulation of ion charges to unit air. Calculate the amount of ions present per volume.
  • this method is relatively accurate when the concentration of ions is high, but when the ion is low concentration is difficult to distinguish from the noise signal has a problem that the accuracy is lowered.
  • a field effect transistor (FET) -based ion balance sensor using a charged antenna electrode, and the voltage connected to the ground and the voltage applied to the resistance as a gate voltage have.
  • the polarity and the amount of ions charged to the antenna electrode are measured as the current change of the FET element operated at the voltage generated across the resistor due to the microcurrent flowing to the ground according to the charging of the antenna electrode.
  • This method is effective in detecting ionic polarity and large amount of ions in the air with a simple circuit configuration, but if the charge of charged particle material is not transferred directly to the antenna metal electrode (insulation of organic material thinly formed on the electrode, etc.) As the current flowing to the ground is not generated, it is difficult to implement a high-sensitivity sensor because it is not linked to an increase in voltage across the resistor.
  • the technical problem to be solved by the present invention is to provide a FET ion sensor that can measure the negative ions in the air in a simple and accurate manner, and an ion providing system using the same.
  • the ion sensor of an embodiment of the present invention comprises a field effect transistor (FET) comprising a channel composed of a semiconductor and a gate insulator layer disposed on the channel, the ion molecule is The gate insulator layer is charged by being adsorbed on the surface of the channel, thereby changing the electrical conductivity of the channel.
  • FET field effect transistor
  • the amount or polarity of the ion molecules can be estimated by changing the electrical conductivity of the channel.
  • a channel consisting of a semiconductor; A gate insulator layer disposed on the channel; And a floating gate electrode disposed on the gate insulator layer.
  • the floating gate electrode may provide a hysteresis characteristic of the drain-source current flowing through the channel according to the sweep of the gate voltage supplied to the substrate.
  • the substrate gate voltage may be changed from a predetermined first voltage to a second voltage to enter a ready state by using the hysteresis characteristic of the drain-source current according to the substrate gate voltage.
  • the gate insulator layer is charged by the adsorption of ion molecules on the surface of the channel, and thus the electrical conductivity of the channel is changed, thereby changing the current between the drain and the source.
  • the intensity can be determined.
  • An FET ion sensor may further include a control electrode disposed around the floating gate electrode and formed on the gate insulator layer.
  • a channel consisting of a semiconductor; A gate insulator layer disposed on the channel; And an organic / inorganic thin film layer disposed on the gate insulator layer.
  • the organic thin film layer may be composed of a photocatalyst material.
  • an anion sensor system of an embodiment of the present invention the FET ion sensor; A fan configured to suck an air containing anion into the FET ion sensor; And a blocking unit disposed at a front end of the FET ion sensor and exposing or blocking the FET ion sensor to negative ions flowing into the FET ion sensor.
  • the blocking unit a blocking plate for blocking the FET ion sensor; And a driving unit rotating the blocking plate.
  • the blocking plate may be made of a metal or a dielectric easy to charge.
  • the anion sensor system of one embodiment of the present invention may further include a fan that allows the air containing the anion to be sucked into the FET ion sensor.
  • the present invention operates by the electric field effect caused by the charging of the channel surface of the FET by the charged air molecules, and thus has an effect of simply implementing an anion measuring system.
  • the present invention can miniaturize the anion measurement system by using the FET, using the anion sensor for the indicator that informs the quality of air in the air, the quality of the indoor release, and whether the recommended amount of negative ions generated in the living space There is an effect to make it easier to configure.
  • FIG. 1 is a block diagram illustrating a FET ion sensor according to an embodiment of the present invention.
  • FIG. 2A schematically illustrates the FET ion sensor of FIG. 1
  • FIG. 2B illustrates an embodiment in which a protective film is further included
  • FIG. 2C illustrates an actual application.
  • 3 is an exemplary view for explaining the relationship between the amount of negative ions in the air and the negative charge amount on the surface of the gate insulator layer in the FET.
  • FIG. 4 is an exemplary view for explaining the hysteresis characteristics of the FET channel of the present invention.
  • 5A and 5B are exemplary views for explaining the operation of the present invention.
  • FIG. 6 is a block diagram illustrating a FET ion sensor according to another embodiment of the present invention.
  • FIG. 7 is a plan view illustrating a FET ion sensor according to another embodiment of the present invention.
  • FIGS 8A and 8B are schematic diagrams of an anion sensor system according to an embodiment of the present invention.
  • 9A and 9B are exemplary views for explaining the structure of a blocking unit according to another exemplary embodiment of the present invention.
  • FIG. 1 is a configuration diagram for explaining a FET ion sensor according to an embodiment of the present invention, showing a structure viewed from the side of the ion sensor 1 of the present invention.
  • the FET ion sensor of the present invention can be implemented in a nano (nano) structure.
  • FIG. 2A schematically illustrates the FET ion sensor of FIG. 1
  • FIG. 2B illustrates an embodiment in which a protective film is further included
  • FIG. 2C illustrates an actual application.
  • the FET ion sensor 1 of the embodiment of the present invention the dielectric layer 11 disposed on the substrate 10, the FET channel 12, the channel 12 over the dielectric layer 11
  • a sensor element corresponding to the channel 12, the source 13, the drain 14, the insulator layer 15, and the floating gate electrode 16 is referred to as S and is briefly illustrated. As shown in the figure, the sensor element S is disposed on the substrate gate 10 and the dielectric layer 11.
  • a protective film 17 may be further disposed on a part of the sensor element S and the background region of the dielectric layer 11.
  • the channel 12, the gate insulator layer 15, the source 13 and the drain 14 are configured in a FET structure, and the gate insulator layer 15 is formed over a portion of the source 13 and the drain 14.
  • the gate insulator layer 15 may be made of silicon oxide (SiO 2 ), but is not limited thereto.
  • the substrate dielectric layer 11 is to increase the detection ability of the negative ions, and insulates the substrate and the sensing channel so as to control or reset the operation bias voltage of the FET channel according to the Vg bias voltage of the substrate 10.
  • it may be a thin film made of SiO 2 , but is not limited thereto.
  • the thin film may serve as an insulator on the substrate to manufacture a FET device.
  • the floating gate electrode 16 is formed on the gate insulator layer 15, and may form a sensing region.
  • the sensing region of the FET is composed of the semiconductor channel 12 as described above, and the surface of the semiconductor channel 12 is disposed with a gate insulator layer 15 capable of receiving a large amount of electrostatic force due to the charge of ions. do.
  • the adsorbed gate insulator layer 15 is charged, and the amount of charge in the gate insulator layer 15 increases according to the concentration of the ion molecules, thereby increasing the surface charge amount. This creates a high field effect in the semiconductor channel 12.
  • the electrical conductivity (electrical resistance) of the channel 12 is changed, and the amount of ion molecules can be analyzed using the same. This will be described with reference to the drawings.
  • FIG. 3 is an example for explaining the relationship between the amount of negative ions in the air and the negative charge adsorption amount on the surface of the gate insulator layer 15 in a FET having a p-type channel.
  • an anion is adsorbed on the insulator layer 15, the change of the drain-source current Ids flowing through the channel 12 is shown.
  • the gate insulator layer 15 maintains a charge equilibrium without anion and antistatic of the anion, and when the anion charge starts, Ids gradually increases, so that the slope as shown in FIG. Represents a small upward curve.
  • Ids increases rapidly, and thus a large rising curve is shown as in B.
  • FIG. Therefore, it is possible to check whether the amount of negative ions in the vicinity of the ion detector 1 increases according to the slope (amount of change of Ids) of the current change graph through A and B of FIG. 3.
  • Ids shows a saturation curve as shown in C of FIG. If it decreases for reasons such as leakage current, the Ids exhibits a falling curve as shown in FIG.
  • the Ids gradually decreases and forms a parallel state as the charged charge on the surface of the channel 12 gradually decreases, but may not reach the same state as the initial Ids because the charged charge remains. Can be.
  • the FET ion sensor 1 of the present invention uses anion charge and antistatic properties on the gate insulating film or the floating gate electrode to give an electric field effect to the channel 12 as described above, and in one embodiment of the present invention, the gate insulator layer
  • the floating gate electrode 16 is arranged on the upper end of 15. Therefore, when the amount of negative ions adsorbed on the sensing region surface of the upper portion of the channel 12 increases, the negative ions can be detected using the Ids variation through the electric field effect of the channel 12 at the potential of the total charge of the floating gate electrode 16. Can be.
  • the channel 12 of the embodiment of the present invention has a hysteresis characteristic.
  • FIG. 4 is an exemplary view for explaining the hysteresis characteristics of the FET channel of the present invention.
  • Ids exhibits hysteresis characteristics according to the sweep of the substrate gate voltage Vg. Therefore, by fixing the gate voltage Vg of the substrate 10 and monitoring the Ids according to the strength of the negative ions, the amount of negative ions can be measured.
  • FIG. 5A and 5B are exemplary views illustrating the operation of the present invention.
  • Vg of the substrate 10 When the gate voltage Vg of the substrate 10 is maintained at -20 to -30V and then lowered to 0V, the negative charge of the floating gate is removed and reset.
  • Ids 1 nA, or Vg, if you want to measure at 2nA
  • Figure 5A Figure 5A
  • -5V Figure 5B
  • the reaction to the anion is measured.
  • the distance between the FET ion sensor 1 and the anion generator (not shown) of the present invention was measured by adjusting from 10 cm to 50 cm.
  • the time at which the anion arrives due to the distance is shown in the response signal of the sensor, and it can be seen that the slope and amplitude of Ids over time are well represented according to the intensity (distance) of the ion. have.
  • Vg responds with a higher sensitivity when a bias voltage is applied at ⁇ 5V.
  • Ids amplitude is output in the same ion situation.
  • FIG. 6 is a block diagram illustrating a FET ion sensor according to another embodiment of the present invention.
  • the FET ion sensor 2 of another embodiment of the present invention has the same basic configuration as the FET ion sensor 1 of FIG. 1, and instead of the floating gate electrode 16, an organic-inorganic thin film layer ( 17).
  • the organic-inorganic thin film layer 17 may have a thickness of several nm to several um so as to easily transfer the electrostatic force by charge to the channel 12 when the particles having anion on the surface of the channel 12 are charged.
  • a conductive material may be included to effectively discharge the accumulated charge on the upper portion of the gate insulator layer 15 that has been charged by the adsorption of negative ions, and the FET ion sensor 2 may be quickly returned to an initial state without additional static discharge. have.
  • organic substances adsorbed on the surface of the sensor during the use of the ion sensor can be easily removed from the air by redox reaction of the photocatalytic material by light irradiation (UV irradiation) and returned to the initial state.
  • the sensor may be initialized by voltage control of the lower channel and the substrate gate.
  • FIG. 7 is a plan view for explaining a FET ion sensor according to another embodiment of the present invention, showing an ion sensor viewed from the top.
  • control electrode 70 is further included in the structure as shown in FIG. 1, description of other components will be omitted.
  • the control electrode 70 of the present invention is formed on the same upper layer of the substrate as the floating gate electrode 16, and may be configured in the same process as the floating gate electrode 16.
  • the control electrode 70 is disposed around the sensing region to charge the charged ions. It is to remove effectively.
  • the control electrode 70 may be applied with the same voltage as the substrate gate voltage during operation of the sensor 3, may be floated, may be grounded, and may be separate from the role of the substrate gate when resetting the sensor 3. It can provide a reset role in the upper adjacent position where the sensing area is located.
  • a voltage for forming an electric field may be applied between the background region 11 and the sensing region of the substrate, thereby inducing the movement of ions to the sensor region.
  • FIGS 8A and 8B are schematic diagrams of an anion sensor system according to an embodiment of the present invention.
  • the anion sensor system of the present invention comprises an anion generator 3, a blocking unit 4, an FET ion sensor 1 and a fan 5.
  • FIG. 1 is arranged as the FET ion sensor 1, it is obvious that the FET ion sensor 2 of FIG. 6 or the ion sensor 3 of FIG. 7 may be arranged.
  • the anion sensor system of the present invention may be included in a predetermined housing (not shown) so that the housing may be disposed at a place where sensing of negative ions is required.
  • the FET ion sensor 1 as described above, includes a floating gate electrode 16, and can be reset using hysteresis characteristics with respect to the gate voltage of the substrate 10. At this time, the FET ion sensor 1 may be turned on by the amount of negative ions.
  • the present invention includes an anion generating unit (3), and can be used together for checking or calibration of the sensor if necessary.
  • the present invention can block or expose the negative ions flowing into the FET ion sensor 1 from the external negative ions by the blocking unit (4).
  • the blocking unit 4 is composed of a driving unit 41 and a blocking plate 42, the blocking plate 42 is opened and closed around the driving unit 41, when the blocking plate 42 is arranged as shown in Figure 8a anion Anion flowing from the generator 3 is blocked from flowing into the FET ion sensor 1, and when disposed as shown in FIG. 8B, negative ions may flow into the FET ion sensor 1.
  • the blocking plate 42 of the blocking unit 4 may be a metal plate for controlling grounding, or may be made of a dielectric such as acrylic, which is easy to charge, but the present invention is not limited to this example.
  • the fan 5 allows the air containing the negative ions to be sucked into the sensor. That is, the atmosphere containing the anion can flow in the direction of the arrow as shown in FIGS. 8A and 8B by the circulation of the fan 5.
  • the negative ion generating unit 3 generates negative ions, and may generate negative ions for calibration.
  • the negative ion generator 3 is disposed at the front end of the flow path formed by the fan 5, and the negative ions released for calibration may flow into the FET ion sensor 1 to detect the negative ions. However, this is optional, and may not include the negative ion generating unit (3).
  • a light source may be further added to remove an air adsorbate adsorbed on the sensing surface through a photocatalytic effect.
  • the gate voltage Vg can be adjusted to a predetermined Vg value.
  • Vg may be controlled to match the threshold voltage or to form an electric field in the background region and the sensing region of the substrate so that more or less ions approach the sensor.
  • the Vg voltage controls the substrate potential higher or lower than the channel potential in addition to the threshold voltage setting function, thereby forming an electric field for controlling the movement trajectory of ions toward the sensor or in a different direction from the sensor.
  • the ions approaching the FET form a straight trajectory, but when Vg is -10V, the background region and the sensing of the substrate are sensed.
  • An electric field is formed on the region so that negative ions may move in a predetermined trajectory toward the sensing region.
  • Vg is 10V
  • negative ions may move in a predetermined trajectory to the opposite side to the sensing region.
  • the present invention is not limited thereto, and by applying various levels of voltages, the negative ions may be more or less adsorbed to the sensing region.
  • the blocking plate 42 of the blocking unit 4 is operated to allow the negative ions to flow into the FET ion sensor 1, and to observe the change of Ids for the negative ions.
  • the intensity of can be measured.
  • a quantitative judgment may be performed by using calibration data, or a qualitative judgment may be performed through a controller (not shown).
  • the sensor can be reset by sweeping Vg again.
  • the blocking unit 4 of the present invention is not limited to the structure shown in Figs. 8A and 8B. That is, the opening and closing in various ways can block or allow the entry of ions delivered to the sensor 1.
  • Figures 9a and 9b is an exemplary view for explaining the structure of the blocking unit of another embodiment of the present invention, it shows that only the structure of the blocking unit in the configuration of Figures 8a and 8b is changed, other components are omitted illustration It was.
  • 9A shows a state in which the breaker 4 is open
  • FIG. 9B shows a state in which the breaker 4 is closed.
  • the blocking plate 42 is opened and closed at the front end of the sensor 1.
  • the present invention is not limited to this example, and various embodiments related to the blocking unit may be applied.
  • the present invention can miniaturize the anion measurement system by using the FET, using the anion sensor for indicators to indicate whether the quality of air in the air, the quality of indoor air, and the recommended amount of negative ions generated in the living space It can be configured easily.

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  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

La présente invention porte sur un capteur d'ion de transistor à effet de champ (FET) et un système l'utilisant. Le capteur d'ion FET de la présente invention comprend un canal formé d'un semi-conducteur et d'une couche d'isolation de grille disposée sur le dessus du canal, des molécules d'ion étant absorbées sur la surface du canal, permettant ainsi à la couche d'isolation de grille d'être électriquement chargée de telle sorte que la conductivité électrique du canal est changée.
PCT/KR2014/011375 2013-07-02 2014-11-25 Capteur d'ion de transistor à effet de champ (fet) et système l'utilisant Ceased WO2015156475A1 (fr)

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CN201480078421.4A CN106461601A (zh) 2013-07-02 2014-11-25 Fed离子探测器及使用其的系统

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KR20130077409 2013-07-02
KR10-2014-0043336 2014-04-11
KR1020140043336A KR101616959B1 (ko) 2013-07-02 2014-04-11 Fet 이온센서 및 이를 이용한 시스템

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KR102426596B1 (ko) * 2017-07-05 2022-07-29 한국전자기술연구원 가스 분자 검출 센서 및 방법
CN108658179B (zh) * 2018-05-18 2021-05-11 同济大学 一种利用正反交替吸附实现脱盐的海水淡化装置及方法
KR102345694B1 (ko) * 2018-12-26 2021-12-31 한국전자기술연구원 가스 감지 센서
KR102559043B1 (ko) 2020-10-30 2023-07-25 (주)엠씨케이테크 이온 검출센서 제조방법 및 이온 검출센서 제조방법으로 제조된 이온 검출센서

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US6022754A (en) * 1997-07-25 2000-02-08 Motorola, Inc. Electronic device and method for forming a membrane for an electronic device
US20050230271A1 (en) * 2004-01-12 2005-10-20 Kalle Levon Floating gate field effect transistors for chemical and/or biological sensing
US20080134759A1 (en) * 2004-07-07 2008-06-12 Universite De Rennes 1 Sensor for Detection and/or Measuring a Concentration of Electrical Charges Contained in an Environment, Corresponding Uses and Method of Manufacture Thereof
JP2009025124A (ja) * 2007-07-19 2009-02-05 Horiba Ltd Ｉｓｆｅｔセンサ用電極
JP2012077923A (ja) * 2010-09-30 2012-04-19 Sharp Corp 空気調和機

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FI934784A0 (fi) * 1993-10-28 1993-10-28 Rados Technology Oy Straolningsdetektor
CN100498319C (zh) * 2004-10-20 2009-06-10 财团法人工业技术研究院 多晶硅薄膜晶体管离子感测装置与制作方法
FI119660B (fi) * 2005-11-30 2009-01-30 Environics Oy Kaasun ioniliikkuvuuden mittausmenetelmä ja -laite
US8373232B2 (en) * 2009-09-02 2013-02-12 Microdul Ag Device to detect and measure static electric charge

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6022754A (en) * 1997-07-25 2000-02-08 Motorola, Inc. Electronic device and method for forming a membrane for an electronic device
US20050230271A1 (en) * 2004-01-12 2005-10-20 Kalle Levon Floating gate field effect transistors for chemical and/or biological sensing
US20080134759A1 (en) * 2004-07-07 2008-06-12 Universite De Rennes 1 Sensor for Detection and/or Measuring a Concentration of Electrical Charges Contained in an Environment, Corresponding Uses and Method of Manufacture Thereof
JP2009025124A (ja) * 2007-07-19 2009-02-05 Horiba Ltd Ｉｓｆｅｔセンサ用電極
JP2012077923A (ja) * 2010-09-30 2012-04-19 Sharp Corp 空気調和機

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CN106461601A (zh) 2017-02-22
KR20150004254A (ko) 2015-01-12
KR101616959B1 (ko) 2016-04-29

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