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WO2015146363A1 - Composition de polissage, son procédé d'utilisation, et procédé de production de substrat - Google Patents

Composition de polissage, son procédé d'utilisation, et procédé de production de substrat Download PDF

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Publication number
WO2015146363A1
WO2015146363A1 PCT/JP2015/054144 JP2015054144W WO2015146363A1 WO 2015146363 A1 WO2015146363 A1 WO 2015146363A1 JP 2015054144 W JP2015054144 W JP 2015054144W WO 2015146363 A1 WO2015146363 A1 WO 2015146363A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
acid
polishing composition
silicon
containing material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2015/054144
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English (en)
Japanese (ja)
Inventor
章太 鈴木
敏男 篠田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of WO2015146363A1 publication Critical patent/WO2015146363A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Definitions

  • the present invention relates to a polishing composition, a method for using the same, and a method for producing a substrate.
  • Polishing composition is used for the use which grind
  • single silicon such as single crystal silicon, polycrystal silicon (polysilicon), and amorphous silicon may be polished to remove at least a part thereof.
  • polishing composition disclosed in Patent Document 1 is known.
  • Such polishing composition contains colloidal silica as a main component and is adjusted to pH 10 or less.
  • a silicon compound such as silicon nitride or silicon oxide may be polished to remove at least a part thereof.
  • the polishing composition disclosed in Patent Document 2 is known.
  • Such a polishing composition contains cerium oxide as abrasive grains and is adjusted to a pH of 10 or less.
  • An object of the present invention is to provide a polishing composition that can be suitably used, for example, in an application of polishing a polishing object having a layer containing a silicon-containing material.
  • a further object of the present invention is to provide a method for using the above polishing composition and a method for producing a substrate.
  • a polishing composition comprising at least one abrasive selected from calcium carbonate, barium carbonate, manganese dioxide, zirconia, and alumina, and a pH adjuster, having a pH of 10.5 or more.
  • a pH adjuster having a pH of 10.5 or more.
  • pH of the polishing composition is 12 or more.
  • the polishing composition is preferably used for polishing a polishing object having a layer containing a silicon-containing material.
  • the silicon-containing material is preferably at least one selected from simple silicon, silicon oxide, silicon nitride, and silicon carbide.
  • a polishing method for polishing a polishing object having a layer containing a silicon-containing material using the polishing composition in another embodiment, there is provided a method for manufacturing a substrate including a polishing step of polishing a substrate having a layer containing a silicon-containing material by the polishing method.
  • the polishing composition of the present invention can be suitably used, for example, for polishing a polishing object having a layer containing a silicon-containing material.
  • the polishing composition is produced by mixing abrasive grains and water, and further adding a pH adjuster to adjust the pH to 10.5 or more.
  • the polishing composition is preferably used for polishing a polishing object having a layer containing a silicon-containing material.
  • the polishing object having a layer containing a silicon-containing material include simple silicon and silicon compounds.
  • the single silicon include single crystal silicon, polycrystalline silicon (polysilicon), and amorphous silicon.
  • Examples of the silicon compound include silicon nitride, silicon oxide, silicon carbide, and the like.
  • the object to be polished is a substrate having a layer containing a silicon-containing material, or a single silicon film or a silicon compound film formed on a substrate having a layer containing a silicon-containing material.
  • the silicon compound film includes a low dielectric constant film having a relative dielectric constant of 3 or less.
  • abrasive grains include calcium carbonate, barium carbonate, manganese dioxide, zirconia, and alumina. These abrasive grains may be used individually by 1 type, and may be used in combination of 2 or more types.
  • the average particle size of the abrasive grains contained in the polishing composition is preferably 5 nm or more, more preferably 10 nm or more. As the average particle diameter of the abrasive grains increases, the polishing rate of the object to be polished is further improved.
  • the average particle size of the abrasive grains contained in the polishing composition is preferably 5000 nm or less, more preferably 3000 nm or less. As the average particle size of the abrasive grains decreases, it becomes easier to obtain a polished surface with low defects and low roughness.
  • the average particle diameter of the abrasive grains can be measured by a dynamic light scattering method.
  • the content of abrasive grains in the polishing composition is preferably 0.1% by mass or more, and more preferably 1% by mass or more. As the abrasive content increases, the polishing rate of the object to be polished provided by the polishing composition is further improved.
  • the content of abrasive grains in the polishing composition is preferably 50% by mass or less, more preferably 40% by mass or less. As the content of the abrasive grains decreases, it becomes easier to obtain a surface with few defects by polishing using the polishing composition, in addition to reducing the manufacturing cost of the polishing composition. Further, as the abrasive content decreases, the remaining amount of abrasive grains on the polished surface is reduced, so that the cleaning efficiency of the polished surface is further improved.
  • the lower limit of the pH range of the polishing composition is 10.5 or more, preferably 11 or more, more preferably 12 or more.
  • the upper limit of the pH range of the polishing composition is not particularly limited, but is preferably less than 14.
  • the pH of the polishing composition can be adjusted by adding a pH adjuster.
  • a pH adjuster known acids, bases, or salts thereof can be used.
  • the base that can be used as the pH adjusting agent include alkali metal hydroxides or salts thereof, alkaline earth metal hydroxides or salts thereof, quaternary ammonium hydroxide compounds, ammonia, amines, and the like.
  • the alkali metal include potassium and sodium.
  • Specific examples of the salt include carbonate, hydrogen carbonate, sulfate, acetate, and the like.
  • Specific examples of the quaternary ammonium include tetramethylammonium, tetraethylammonium, tetrabutylammonium and the like.
  • the quaternary ammonium hydroxide compound contains quaternary ammonium hydroxide or a salt thereof.
  • Specific examples of the quaternary ammonium hydroxide compound include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, and the like.
  • amines include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- ( ⁇ -aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, anhydrous piperazine Piperazine hexahydrate, 1- (2-aminoethyl) piperazine, N-methylpiperazine, guanidine and the like. These bases may be used individually by 1 type, and may be used in combination of 2 or more type.
  • ammonia, ammonium salts, alkali metal hydroxides, alkali metal salts, quaternary ammonium hydroxide compounds, and amines are preferable. More preferably, ammonia, potassium compound, sodium hydroxide, quaternary ammonium hydroxide compound, ammonium hydrogen carbonate, ammonium carbonate, sodium hydrogen carbonate, and sodium carbonate are used. It is more preferable that the polishing composition contains a potassium compound as a base from the viewpoint of preventing metal contamination. Examples of the potassium compound include potassium hydroxide or salt, and specific examples include potassium hydroxide, potassium carbonate, potassium hydrogen carbonate, potassium sulfate, potassium acetate, and potassium chloride.
  • acids that can be used as pH adjusters include inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid, formic acid, acetic acid, propionic acid Butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citric acid, lactic acid
  • a salt such as an ammonium salt or an alkali metal salt of the acid can be used in place of the acid or in combination with the acid.
  • the polishing composition used in the present embodiment may contain other additives as necessary within a range that does not impair the effects of the present invention. Examples of other additives include oxidizing agents, chelating agents (complexing agents), water-soluble polymers, and surfactants.
  • the polishing composition may contain an oxidizing agent.
  • the oxidizing agent oxidizes the surface of the object to be polished to form an oxide film.
  • Specific examples of the oxidizing agent include peroxide, periodic acid, periodate, permanganate, vanadate, hypochlorite, iron oxide, ozone and the like.
  • Specific examples of the peroxide include hydrogen peroxide, peracetic acid, percarbonate, urea peroxide and perchloric acid, perchlorate, and persulfates such as sodium persulfate, potassium persulfate, and ammonium persulfate. Is mentioned.
  • periodic acid, periodate, hypochlorite, persulfate and hydrogen peroxide are preferable from the viewpoint of polishing rate, and hydrogen peroxide is particularly preferable from the viewpoint of stability in an aqueous solution and environmental load.
  • oxidizing agents may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the chelating agent functions to suppress metal contamination of the abrasive product by capturing metal impurities and forming a complex.
  • Specific examples of the chelating agent include aminocarboxylic acid chelating agents and organic phosphonic acid chelating agents.
  • Specific examples of the aminocarboxylic acid chelating agent include ethylenediaminetetraacetic acid, sodium ethylenediaminetetraacetate, nitrilotriacetic acid, sodium nitrilotriacetate, ammonium nitrilotriacetate, hydroxyethylethylenediaminetriacetic acid, sodium hydroxyethylethylenediaminetriacetate, diethylenetriamine Examples include acetic acid, sodium diethylenetriaminepentaacetate, triethylenetetraminehexaacetic acid, sodium triethylenetetraminehexaacetate.
  • organic phosphonic acid chelating agent examples include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetrakis (methylenephosphonic acid), diethylenetriaminepenta (methylene Phosphonic acid), triethylenetetraamine hexa (methylenephosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane- 1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2 , 3,4-Tricarboxylic acid, ⁇ -methylphosphonosucci Etc.
  • These chelating agents may be used individually by 1 type, and
  • the polishing composition may contain a water-soluble polymer.
  • water-soluble polymers include polystyrene sulfonate, polyisoprene sulfonate, polyacrylate, polymaleic acid, polyitaconic acid, polyvinyl acetate, polyvinyl alcohol, polyglycerin, polyvinyl pyrrolidone, isoprene sulfonic acid and acrylic.
  • polyvinylpyrrolidone-polyacrylic acid copolymer polyvinylpyrrolidone-vinyl acetate copolymer, naphthalenesulfonic acid formalin condensate salt, diallylamine hydrochloride-sulfur dioxide copolymer, carboxymethylcellulose, carboxymethylcellulose Examples include salts, hydroxyethyl cellulose, hydroxypropyl cellulose, pullulan, chitosan, chitosan salts and the like.
  • the polishing composition contains a water-soluble polymer, the surface roughness of the polishing object after polishing using the polishing composition is further reduced.
  • One of these water-soluble polymers may be used alone, or two or more thereof may be used in combination.
  • the content of the water-soluble polymer in the polishing composition is preferably 0.0001 g / L or more, more preferably 0.001 g / L or more. As the content of the water-soluble polymer increases, the surface roughness of the polished surface obtained using the polishing composition is further reduced.
  • the content of the water-soluble polymer in the polishing composition is preferably 10 g / L or less, more preferably 1 g / L or less. As the content of the water-soluble polymer decreases, the remaining amount of the water-soluble polymer on the polished surface decreases, so that the cleaning efficiency of the polished surface is further improved.
  • a polishing agent may be included in the polishing composition.
  • the surfactant can improve the cleanability after polishing by imparting hydrophilicity to the polished surface, and can prevent the adhesion of dirt to the polished surface.
  • the surfactant may be any of an anionic surfactant, a cationic surfactant, an amphoteric surfactant, and a nonionic surfactant.
  • anionic surfactant examples include polyoxyethylene alkyl ether acetic acid, polyoxyethylene alkyl sulfate ester, alkyl sulfate ester, polyoxyethylene alkyl sulfate, alkyl sulfate, alkylbenzene sulfonic acid, alkyl phosphate ester, polyoxyethylene ester Ethylene alkyl phosphate ester, polyoxyethylene sulfosuccinic acid, alkyl sulfosuccinic acid, alkyl naphthalene sulfonic acid, alkyl diphenyl ether disulfonic acid, salts thereof and the like are included.
  • cationic surfactant examples include alkyltrimethylammonium salt, alkyldimethylammonium salt, alkylbenzyldimethylammonium salt, alkylamine salt and the like.
  • amphoteric surfactants include alkyl betaines and alkyl amine oxides.
  • specific examples of the nonionic surfactant include polyoxyethylene alkyl ether, polyoxyalkylene alkyl ether, sorbitan fatty acid ester, glycerin fatty acid ester, polyoxyethylene fatty acid ester, polyoxyethylene alkylamine, alkyl alkanolamide, and the like. It is. One of these surfactants may be used alone, or two or more thereof may be used in combination.
  • the content of the surfactant in the polishing composition is preferably 0.0001 g / L or more, more preferably 0.001 g / L or more. As the surfactant content increases, the cleanability after polishing is further improved.
  • the content of the surfactant in the polishing composition is preferably 10 g / L or less, more preferably 1 g / L or less. As the surfactant content decreases, the remaining amount of surfactant on the polished surface decreases, so that the cleaning efficiency of the polished surface is further improved.
  • the polishing method using the polishing composition of the present embodiment includes a method for polishing a polishing target, for example, a substrate surface having a layer containing a silicon-containing material, using the polishing composition described above.
  • a polishing target object for example, a grinding
  • polishing characteristics can be improved more.
  • the detailed reason why the polishing characteristics are improved by using the polishing composition of the present embodiment is unknown, but is presumed to be due to the following mechanism. Theoretically, the higher the pH of the surrounding environment, the more the silicon-containing material is dissolved and the polishing rate is improved.
  • the abrasive grains themselves are dissolved when the pH is further increased, and the improvement in the polishing rate of the surface of the silicon-containing material tends to be suppressed.
  • the surface of the silicon-containing material can be polished at a high speed because the abrasive grains do not dissolve even in a high pH region.
  • the present invention is not limited to the above mechanism. According to the polishing composition of the above embodiment, the following effects can be obtained.
  • the polishing characteristics for the object to be polished can be further improved. Specifically, for example, when a polishing object having a layer containing a silicon-containing material is polished using the polishing composition of the present embodiment, a high polishing rate can be obtained.
  • the above embodiment may be modified as follows.
  • the polishing composition of the said embodiment may be prepared by diluting the undiluted
  • the said polishing composition may contain well-known additives, such as antiseptic
  • antiseptic and antifungal agent include, for example, isothiazoline compounds, paraoxybenzoates, phenoxyethanol and the like.
  • a known additive such as a pH stabilizer may be contained in the polishing composition as necessary.
  • a pH stabilizer the salt of the combination of a weak acid and a strong base or a weak acid and a weak base is mentioned, for example.
  • the polishing composition of the above embodiment may be used for polishing an object to be polished that does not have a layer containing a silicon-containing material.
  • a polishing composition was prepared by adding a pH adjuster and water to the abrasive grains.
  • a polishing composition was prepared by adding a pH adjuster and water to the abrasive grains.
  • Table 1 shows the details of the components in the polishing compositions of Examples and Comparative Examples, and the measured pH values of the polishing compositions of Examples and Comparative Examples.
  • the “polishing rate” column in Table 1 shows the silicon removal rate when polishing the surface of a single crystal Si substrate of 32 mm square under the conditions shown in Table 2 using the polishing compositions of Examples and Comparative Examples. Show.
  • the value of the silicon removal rate was determined as follows. About each board

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Cette composition de polissage comprend : des grains abrasifs d'au moins un type choisi parmi le carbonate de calcium, le carbonate de baryum, le dioxyde de manganèse, le zircone et l'alumine ; et un agent d'ajustement du pH. Ladite composition de polissage possède un pH d'au moins 10.5. Il est préférable que la composition de polissage soit utilisée pour polir un objet à polir comportant une couche comprenant un matériau contenant du silicium.
PCT/JP2015/054144 2014-03-27 2015-02-16 Composition de polissage, son procédé d'utilisation, et procédé de production de substrat Ceased WO2015146363A1 (fr)

Applications Claiming Priority (2)

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JP2014-066617 2014-03-27
JP2014066617A JP6411759B2 (ja) 2014-03-27 2014-03-27 研磨用組成物、その使用方法、及び基板の製造方法

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WO2015146363A1 true WO2015146363A1 (fr) 2015-10-01

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TW (1) TWI656204B (fr)
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WO2020194944A1 (fr) 2019-03-27 2020-10-01 Ａｇｃ株式会社 Procédé de production d'un substrat d'oxyde de gallium et suspension de polissage pour substrat d'oxyde de gallium

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