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WO2015050252A1 - Pâte conductrice - Google Patents

Pâte conductrice Download PDF

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Publication number
WO2015050252A1
WO2015050252A1 PCT/JP2014/076589 JP2014076589W WO2015050252A1 WO 2015050252 A1 WO2015050252 A1 WO 2015050252A1 JP 2014076589 W JP2014076589 W JP 2014076589W WO 2015050252 A1 WO2015050252 A1 WO 2015050252A1
Authority
WO
WIPO (PCT)
Prior art keywords
melting point
component
conductive paste
metal powder
point metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/076589
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English (en)
Japanese (ja)
Inventor
仁志 真舩
義宗 春藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Three Bond Fine Chemical Co Ltd
Original Assignee
Three Bond Fine Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Three Bond Fine Chemical Co Ltd filed Critical Three Bond Fine Chemical Co Ltd
Priority to JP2015540572A priority Critical patent/JP6447504B2/ja
Publication of WO2015050252A1 publication Critical patent/WO2015050252A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H01G4/0085—Fried electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors

Definitions

  • the present invention relates to a conductive paste, and more particularly to a conductive paste suitable for forming electrodes such as solar cells and multilayer capacitors.
  • the conductive paste is a paste-like composition composed mainly of a binder and a conductive filler dispersed in the binder, and is used for electrodes of solar cells and multilayer capacitors, wiring of printed boards, and the like.
  • the conductive paste when used as an electrode of a solar cell, is transferred as an electrode pattern on a silicon substrate by a screen printing method or the like. Thereafter, the conductive paste is fixed to the substrate by heating.
  • the conductive paste when used as an internal electrode of a multilayer capacitor, the conductive paste is transferred as an internal electrode pattern onto a dielectric sheet by a screen printing method or the like. Thereafter, a large number of dielectric sheets are laminated and pressed in the thickness direction. After being cut into the shape of the multilayer capacitor, the conductive paste is fixed to the dielectric sheet by heating. On the other hand, when used as an external electrode of a multilayer capacitor, the conductive paste is applied to both ends of the cut dielectric sheet and conductive paste laminate, and then fixed to both ends by heating.
  • conductive pastes that are used in a wide variety of fields are required to have further improved characteristics, and in particular, volume resistance (resistance per volume of the conductive paste) and connection resistance (the conductive paste is in contact with this) There is a high need for reducing the resistance between the electrode and the like.
  • Patent Document 1 proposes a conductive paste containing a conductive filler made of copper or nickel, solder particles made of an alloy of bismuth and tin, a flux, and an adhesive.
  • This conductive paste reduces volume resistance by forming an intermetallic bond between the solder and the conductive filler and between the solder and the electrodes of the electronic component.
  • the acicular nickel filler breaks the surface oxide film of the plating such as gold, copper, and tin, thereby reducing the connection resistance to the electrode.
  • heterojunction type solar cell As a crystalline silicon type, a polycrystalline silicon type, and an amorphous silicon type, a heterojunction type solar cell. (Also called a HIT type solar cell) is attracting attention.
  • a very thin film (thickness of several nm) of amorphous silicon is laminated on a crystalline silicon wafer, and a thin film (thickness) of a transparent conductive oxide such as ITO (indium oxide / tin). Several tens of nm) are stacked.
  • a grid electrode is formed on the transparent conductive thin film by a screen-printed conductive paste.
  • an electrode pattern can be formed at a low temperature of 300 ° C. or less, and a conductive paste having a low connection resistance to a thin film of a transparent conductive oxide such as ITO. Is desired.
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide a conductive paste having a low volume resistance and a low connection resistance to a thin film of a transparent conductive oxide such as ITO.
  • a conductive paste is obtained by adding a small amount of a cellulose derivative to a conductive paste containing a binder, a high melting point metal powder, a low melting point metal powder, an organic solvent, and a flux. It has been found that the resistance (contact resistance) generated between ITO and the ITO thin film can be greatly reduced.
  • the present invention (A) a binder comprising a thermoplastic resin and / or a thermosetting resin; (B) a conductive filler comprising a high melting point metal powder and a low melting point metal powder; (C) an organic solvent; (D) a flux and (E) a cellulose derivative, It is related with the electrically conductive paste whose property change temperature of the said binder is more than melting
  • the melting point of the high melting point metal powder in the component (B) is 400 ° C. or more, and the melting point of the low melting point metal powder is 350 ° C. or less.
  • the refractory metal powder in the component (B) is at least one metal selected from copper, silver, gold, nickel, platinum, palladium, germanium and zinc and / or these
  • the low melting point metal powder is made of at least one metal selected from tin, bismuth, lead and indium and / or an alloy containing these metals.
  • the component (E) is at least one selected from the group consisting of hydroxyalkyl cellulose, acetyl cellulose, and nitrocellulose.
  • the component (E) is at least one hydroxyalkyl cellulose selected from the group consisting of hydroxymethyl cellulose ether, hydroxyethyl cellulose ether and hydroxypropyl cellulose ether.
  • the component (A) comprises a phenoxy resin.
  • the component (C) has a surface tension of 35 mN / m or more at 25 ° C.
  • the component (C) is ethylene glycol monophenyl ether (PhG), diethylene glycol monophenyl ether (PhDG), propylene glycol monophenyl ether (PhFG) and ethylene glycol monobenzyl ether. It is at least one selected from the group consisting of (BzG).
  • a conductive paste having a low volume resistance and a low connection resistance to a transparent conductive oxide thin film such as ITO.
  • the component (A) and the binder of the conductive paste of the present invention are compositions comprising a thermosetting resin and / or a thermoplastic resin, and are soluble in an organic solvent (component (C)) described later.
  • Each component can be dispersed and is not particularly limited as long as it has an adhesive force to the substrate.
  • an epoxy resin, a phenoxy resin, an acrylic resin, a phenol resin etc. are mentioned, for example, Among these, a phenoxy resin is preferable.
  • the phenoxy resin is a polyhydroxy ether synthesized from bisphenol and epichlorohydrin and having a weight average molecular weight of about 20,000 to 70,000.
  • Phenoxy resin is a thermosetting resin that cures with a curing agent while having thermoplasticity, has higher adhesion to substrates than general thermoplastic resins, and is more than epoxy resin, which is one of thermosetting resins. Has a feature of low resistance.
  • the binder When the binder contains a thermosetting resin, it preferably contains a curing agent.
  • the curing agent known ones can be used according to the type of curable resin.
  • the thermosetting resin is an epoxy resin, an amine compound, a polyamide resin, an imidazole, a polymercaptan, an acid anhydride, And latent curing agents such as products and adduct compounds.
  • the usage-amount is not specifically limited, It can adjust suitably according to the kind of thermosetting resin and hardening
  • the amount of the curing agent used is preferably 1 to 50 parts by mass with respect to 100 parts by mass of the thermosetting resin.
  • the binder is preferably one whose properties change at a temperature below the melting point of the refractory metal powder.
  • the glass transition temperature (Tg) is a temperature at which the property changes (hereinafter, this temperature is referred to as a property change temperature in the present invention).
  • Tg glass transition temperature
  • the property change temperature is in the above range, the low melting point metal powder is melted during heating, and an alloy is easily formed with the high melting point metal powder.
  • the binder is a thermosetting resin
  • the property change temperature changes depending on the combination with the curing agent component, and does not maintain a value specific to the substance.
  • the range of the property change temperature is preferably 100 ° C to 300 ° C.
  • the property change temperature is less than 100 ° C.
  • a metal having a melting point lower than that is difficult to obtain or expensive Moreover, there is a possibility that the final product such as a solar cell cannot be used in a high temperature environment.
  • the property change temperature exceeds 300 ° C., energy consumption in the production process of the final product may increase, or other components may be adversely affected.
  • a property change temperature of 150 ° C. to 250 ° C. is more preferable because it is easy to obtain a low-melting-point metal and energy consumption during production can be further reduced.
  • the component (B) and the conductive filler of the conductive paste of the present invention are composed of a high melting point metal powder and a low melting point metal powder. It is preferable that the melting point of the high melting point metal powder is equal to or higher than the property change temperature of the binder, and the melting point of the low melting point metal powder is equal to or lower than the property change temperature of the binder.
  • the shape of the high melting point metal powder and the low melting point metal powder contained in the conductive filler is not particularly limited, and can be appropriately selected from spherical, flakes, needles and the like.
  • the size of the high melting point metal powder and the low melting point metal powder contained in the conductive filler can be appropriately selected according to the thickness and thickness of the wiring to be formed. For example, the average particle diameter is about 1 to 50 ⁇ m. Are preferably used. In addition, the average particle diameters of the high melting point metal powder and the low melting point metal powder respectively represent those measured using a dynamic light scattering type particle size distribution measuring apparatus.
  • the refractory metal powder is not particularly limited as long as the melting point is not lower than the above-described property change temperature, but is preferably 400 ° C. or higher and 600 ° C. or higher from the viewpoint of ease of temperature control during heating. It is more preferable that the temperature is 800 ° C. or higher. Moreover, since the resistance of the whole electrically conductive paste becomes low, it is preferable that the electrical resistivity (specific resistance) of a metal simple substance is low. For example, a metal having an electrical resistivity of 20 ⁇ ⁇ cm or less is preferable, and a metal having a resistivity of 10 ⁇ ⁇ cm or less is more preferable.
  • Such metals include copper (melting point: 1083 ° C.), silver (melting point: 962 ° C.), gold (melting point: 1064 ° C.), nickel (melting point: 1453 ° C.), platinum (melting point: 1774 ° C.), palladium (melting point). : 1555 ° C.), pure metals such as germanium (melting point: 959 ° C.), zinc (melting point: 419 ° C.), and alloys containing them.
  • the low melting point metal powder is not particularly limited as long as the melting point is not higher than the above-described property change temperature, but preferably is 350 ° C. or lower (more preferably 300 ° C. or lower) because the influence on the substrate to be applied is reduced. If the temperature is in the range of 100 ° C. to 280 ° C., the possibility of re-melting in the use environment is reduced, and the energy consumption during heating is reduced, which is more preferable.
  • Examples of such metals include tin (melting point: 232 ° C.), bismuth (melting point: 271 ° C.), lead (melting point: 328 ° C.), indium (melting point: 157 ° C.), and alloys containing these. Among these, an alloy is preferable from the viewpoint that the melting point can be adjusted, and an alloy containing no lead is more preferable from the environmental viewpoint. Examples thereof include a tin-bismuth alloy.
  • the low melting point metal powder melts during heating and wets and solidifies the high melting point metal powder, so oxygen in the environment comes into contact with the high melting point metal powder. It becomes difficult. Therefore, when a base metal that is easily oxidized, such as copper or nickel, is used as the refractory metal powder, even if the conductive paste after heating is left in an environment where it is easily oxidized (for example, in a high-temperature and high-humidity atmosphere) An increase in resistance and connection resistance is sufficiently suppressed.
  • the blending amount of the component (B) is preferably 6000 to 30000 parts by mass, more preferably 9000 to 20000 parts by mass with respect to 100 parts by mass of the component (A). If the amount is less than 6000 parts by mass, the volume resistance and connection resistance of the conductive paste may be increased, and if it is more than 30000 parts by mass, the adhesive force to the substrate may be reduced.
  • the component (C) and the organic solvent of the conductive paste of the present invention are not particularly limited as long as they are organic solvents that can form a uniform mixed system with the binder.
  • a binder may be dispersed, but a binder is preferably dissolved.
  • organic solvents include ether compounds, alcohol compounds, ester compounds, ketone compounds, hydrocarbon compounds and the like. Among these, it is preferable to use ether compounds from the viewpoint of inhibiting moisture (humidity) uptake in a use environment and suppressing oxidation of metal powder.
  • the component (C) is particularly preferable when the surface tension is 35 mN / m or more at 25 ° C., since bleeding of the wiring pattern formed on the substrate can be suppressed.
  • organic solvent examples include ethylene glycol monophenyl ether (PhG) (surface tension at 25 ° C .: 36.6 mN / m) and diethylene glycol monophenyl ether (PhDG) (surface tension at 25 ° C .: 44.9 mN / m).
  • the surface tension of the organic solvent at 25 ° C. represents a static surface tension value measured by the Wilhelmy method or the like.
  • the blending amount of the component (C) is preferably 100 to 8000 parts by mass, more preferably 500 to 4500 parts by mass with respect to 100 parts by mass of the component (A). If the amount is less than 100 parts by mass, it may be difficult to mix the components. If the amount is more than 8000 parts by mass, the bleeding may increase and it may be difficult to maintain the shape of the wiring pattern.
  • the component (D) and flux of the conductive paste of the present invention are blended in order to remove the oxide film of the high melting point metal powder and improve the wettability of the molten low melting point metal powder. Since the surface of most metals is covered with an insulating oxide film, the resistance value of the conductive paste can be lowered by adding a flux. Moreover, by increasing the wettability of the low melting point metal powder, the melted low melting point metal powder can be sufficiently spread on the surface of the high melting point metal powder, and the resistance value of the conductive paste can be lowered.
  • the flux is appropriately selected according to the metal powder to be used, and examples thereof include rosin flux.
  • the rosin flux is a flux obtained by adding an activator or a solvent to rosin, which is a natural resin obtained by distilling pine crabs. For example, WHP-002 manufactured by Arakawa Chemical Industries, Ltd. is available. is there.
  • the compounding amount of the component (D) is preferably 100 to 1000 parts by mass, more preferably 150 to 650 parts by mass with respect to 100 parts by mass of the component (A). If the amount is less than 100 parts by mass, the oxide film of the component (B) may not be sufficiently removed. If the amount is more than 1000 parts by mass, bleeding may increase and it may be difficult to maintain the shape of the wiring pattern.
  • the compounding quantity here says solid content.
  • rosin-type flux WHP-002 manufactured by Arakawa Chemical Co., Ltd.
  • the component (E) and the cellulose derivative of the conductive paste of the present invention are those in which the hydroxyl group of cellulose is substituted to adjust the solubility in a solvent.
  • examples thereof include cellulose ester derivatives and cellulose ether derivatives.
  • Cellulose ester derivatives include organic substances such as cellulose acetate (also called acetyl cellulose or cellulose acetate), cellulose triacetate (three hydroxyl groups are acetylated), cellulose propionate, cellulose acetate propionate, cellulose acetate butyrate, etc. There are esters and inorganic esters such as nitrocellulose and cellulose sulfate.
  • Examples of cellulose ether derivatives include alkyl cellulose ethers, hydroxyalkyl cellulose ethers, and carboxyalkyl cellulose ethers.
  • Specific examples of the alkyl cellulose ether include methyl cellulose, ethyl cellulose, ethyl methyl cellulose and the like.
  • Specific examples of the hydroxyalkyl cellulose ether include hydroxymethyl cellulose (HMC), hydroxyethyl cellulose (HEC), hydroxypropyl cellulose (HPC), hydroxyethyl methyl cellulose (HEMC), hydroxypropyl methyl cellulose (HPMC), ethyl hydroxyethyl cellulose (EHEC) and the like. Is mentioned.
  • Specific examples of the carboxyalkyl cellulose ether include carboxymethyl cellulose (CMC) and carboxyethyl cellulose (CEC).
  • hydroxymethylcellulose, hydroxyethylcellulose, hydroxypropylcellulose, acetylcellulose, and nitrocellulose have a great effect of reducing the connection resistance of the conductive paste, and further, hydroxymethylcellulose, hydroxyethylcellulose, and hydroxypropylcellulose suppress bleeding. Particularly preferred from the viewpoint of action.
  • the blending amount of the component (E) is preferably 1 to 100 parts by mass, more preferably 5 to 50 parts by mass with respect to 100 parts by mass of the component (A). If the amount is less than 1 part by mass, bleeding tends to be large and it may be difficult to maintain the shape of the wiring pattern. If the amount is more than 100 parts by mass, the viscosity may be high and a fine wiring pattern may not be formed.
  • the conductive paste of the present invention may contain other components as long as the effects of the present invention are exhibited.
  • other components include flexibility imparting agents, impact resistance imparting agents, non-conductive fillers, heat resistance imparting agents, rheology modifiers, pigments, coupling agents, antifoaming agents, leveling agents, and anti-aging agents.
  • the conductive paste of the present invention can be prepared by mixing the above components in a predetermined composition.
  • the order of mixing and the method of mixing are not particularly limited.
  • connection resistance and bleeding in the examples and comparative examples were measured as follows.
  • a conductive paste was applied to a reference position (reference position) and four measurement positions (first to fourth measurement positions) at predetermined intervals therefrom.
  • the ITO substrate was heated at 200 ° C. for 1 hour to cure the conductive paste. After returning to normal temperature, the resistance between the two points of the reference position and the first measurement position was measured, and then the resistance between the two points of the reference position and the second to fourth measurement positions was sequentially measured. By plotting these values on a graph and obtaining the Y intercept, the connection resistance between the conductive paste and the ITO substrate was calculated.
  • ⁇ Smear> A conductive paste having a width of 1 mm and a length of 10 mm was applied on the ITO substrate. After leaving at 20 ° C. for 1 hour, it was visually confirmed with an optical microscope. The degree of blurring was a relative evaluation, and “small”, “low”, and “high” in order from the smallest.
  • Component (B) 10000 parts by mass of Cu powder as the high melting point metal powder (average particle size 20 ⁇ m, melting point 1083 ° C., Mitsui Metals Mining Co., Ltd.
  • Component (C) As a solvent, 2500 parts by mass of ethylene glycol monophenyl ether (25 ° C. surface tension: 36.6 mN / m, product of Nippon Emulsifier Co., Ltd.)
  • Component (D) As a flux, 500 parts by mass of rosin-based flux (WHP-002, Arakawa Chemical Industries, Ltd. product)
  • component 50 parts by mass of hydroxymethylcellulose as a cellulose derivative (product of Sakai Industry Co., Ltd.)
  • Example 2 A conductive paste was prepared in the same manner as in Example 1 except that the solvent of component (C) was changed to butyl carbitol (25 ° C. surface tension: 30 mN / m).
  • Example 3 A conductive paste was prepared in the same manner as in Example 1 except that the thermosetting resin (A) was changed to a thermoplastic resin (acrylic resin, PMMA, manufactured by Mitsubishi Rayon Co., Ltd.) and the curing agent was omitted.
  • thermosetting resin (A) was changed to a thermoplastic resin (acrylic resin, PMMA, manufactured by Mitsubishi Rayon Co., Ltd.) and the curing agent was omitted.
  • Example 4 A conductive paste was prepared in the same manner as in Example 1 except that the high melting point metal powder of component (B) was changed to one having an average particle size of 10 ⁇ m.
  • Example 5 Example 1 except that the low melting point metal powder of component (B) was changed to Sn-37Pb (average particle size 10 ⁇ m, melting point: 184 ° C., Mitsui Kinzoku Mining Co., Ltd. product) and the blending amount was 4000 parts by mass. Similarly, a conductive paste was prepared.
  • Example 6 A conductive paste was prepared in the same manner as in Example 1 except that the cellulose derivative of the component (E) was changed to nitrocellulose (product of Sakai Kogyo Co., Ltd.).
  • Example 7 A conductive paste was prepared in the same manner as in Example 1 except that the cellulose derivative of the component (E) was changed to acetyl cellulose (product of Sakai Industry Co., Ltd.).
  • Example 1 A conductive paste was prepared in the same manner as in Example 1 except that the cellulose derivative as the component (E) was omitted.
  • Example 1 the connection resistance was small, and the blur was “slight” or “low”.
  • Example 2 the solvent was replaced with butyl carbitol having a surface tension at 25 ° C. of less than 35 mN / m.
  • the cellulose derivative was other than hydroxyalkyl cellulose (nitrocellulose). It was confirmed that the blur was slightly increased by substituting acetylcellulose. This may be a problem when used for a fine wiring pattern.
  • Comparative Example 1 by omitting the cellulose derivative, the connection resistance was greatly increased, and a lot of bleeding was observed.
  • Comparative Example 2 the connection resistance was greatly increased by omitting the low melting point metal powder. Furthermore, when the volume resistance was measured in a high-temperature and high-humidity environment (85 ° C. ⁇ 85% RH), the change was within 15% even after 100 hours in other examples. 2 increased by 100% after 2 hours.
  • a conductive paste that has a low volume resistance, can be applied to a fine pattern, and has a low connection resistance to a transparent conductive oxide thin film such as ITO.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

La présente invention concerne une pâte conductrice qui contient : (A) un liant comprenant une résine thermoplastique et/ou une résine thermodurcissable, (B) une charge conductrice comprenant une poudre métallique à point de fusion élevé et une poudre métallique à point de fusion bas, (C) un solvant organique, (D) un flux et (E) un dérivé de cellulose. La température de changement de propriété du liant n'est pas inférieure au point de fusion de la poudre métallique à point de fusion bas, ni supérieure au point de fusion de la poudre métallique à point de fusion élevé. Cette pâte conductrice présente une faible résistivité volumique et une faible résistance de liaison à une couche mince d'un oxyde conducteur transparent tel qu'un ITO.
PCT/JP2014/076589 2013-10-04 2014-10-03 Pâte conductrice Ceased WO2015050252A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015540572A JP6447504B2 (ja) 2013-10-04 2014-10-03 導電性ペースト

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013209089 2013-10-04
JP2013-209089 2013-10-04

Publications (1)

Publication Number Publication Date
WO2015050252A1 true WO2015050252A1 (fr) 2015-04-09

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JP (1) JP6447504B2 (fr)
WO (1) WO2015050252A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016213440A (ja) * 2015-04-28 2016-12-15 三星エスディアイ株式会社Samsung SDI Co., Ltd. 電極形成用組成物ならびに当該組成物を用いて製造される電極および太陽電池
KR20170137936A (ko) * 2015-04-28 2017-12-13 오르멧 서키츠 인코퍼레이티드 반도체 다이 어태치 분야를 위한 금속 로딩량이 많은 소결 페이스트
KR101814084B1 (ko) * 2016-12-02 2018-01-08 (주)에프엠 세라믹 칩부품의 연성외부전극 형성용 도전성 페이스트 조성물
KR101831322B1 (ko) * 2017-01-25 2018-02-23 (주)에프엠 니켈도금층이 제거된 연성외부전극 제조용 도전성 페이스트 및 이를 포함하는 수동 전자 부품
WO2018047690A1 (fr) * 2016-09-09 2018-03-15 積水化学工業株式会社 Matériau conducteur, corps de structure de connexion, et procédé de production de corps de structure de connexion
JP2018106906A (ja) * 2016-12-26 2018-07-05 サムソン エレクトロ−メカニックス カンパニーリミテッド． 電極用ペーストおよび積層セラミック電子部品
CN111128442A (zh) * 2020-01-07 2020-05-08 北京梦之墨科技有限公司 一种液态金属导电浆料及其制备方法、电子器件
JP2020152778A (ja) * 2019-03-19 2020-09-24 タツタ電線株式会社 導電性組成物
CN114023488A (zh) * 2021-11-01 2022-02-08 北京康普锡威科技有限公司 一种异质结太阳能电池用低温导电浆料及电极
US20220254571A1 (en) * 2021-02-05 2022-08-11 Samsung Electro-Mechanics Co., Ltd. Multilayer ceramic electronic component
US11970631B2 (en) 2021-06-18 2024-04-30 Panasonic Intellectual Property Management Co., Ltd. Conductive paste and conductive film formed using the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528829A (ja) * 1991-07-12 1993-02-05 Tokyo Cosmos Electric Co Ltd 導電塗料及びその導電膜形成方法
JPH11307930A (ja) * 1998-04-24 1999-11-05 Namics Corp 基板およびその製造方法
WO2003105160A1 (fr) * 2002-05-31 2003-12-18 タツタ電線株式会社 Pate conductrice, carte multicouche comprenant la pate conductrice et procede de production associe
JP2006260951A (ja) * 2005-03-17 2006-09-28 Osaka Univ 導電性銅ペースト
JP2009059574A (ja) * 2007-08-31 2009-03-19 Sony Chemical & Information Device Corp 導電ペースト及びこれを用いた多層配線基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9923882D0 (en) * 1999-10-08 1999-12-08 Du Pont Chemical composition
JP3732073B2 (ja) * 2000-07-04 2006-01-05 松下電池工業株式会社 半導体用電極およびその製造方法
US20130180583A1 (en) * 2012-01-17 2013-07-18 E I Du Pont De Nemours And Company Conductive paste for fine-line high-aspect-ratio screen printing in the manufacture of semiconductor devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528829A (ja) * 1991-07-12 1993-02-05 Tokyo Cosmos Electric Co Ltd 導電塗料及びその導電膜形成方法
JPH11307930A (ja) * 1998-04-24 1999-11-05 Namics Corp 基板およびその製造方法
WO2003105160A1 (fr) * 2002-05-31 2003-12-18 タツタ電線株式会社 Pate conductrice, carte multicouche comprenant la pate conductrice et procede de production associe
JP2006260951A (ja) * 2005-03-17 2006-09-28 Osaka Univ 導電性銅ペースト
JP2009059574A (ja) * 2007-08-31 2009-03-19 Sony Chemical & Information Device Corp 導電ペースト及びこれを用いた多層配線基板

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KR20170137936A (ko) * 2015-04-28 2017-12-13 오르멧 서키츠 인코퍼레이티드 반도체 다이 어태치 분야를 위한 금속 로딩량이 많은 소결 페이스트
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US10727193B2 (en) 2015-04-28 2020-07-28 Ormet Circuits, Inc. Sintering pastes with high metal loading for semiconductor die attach applications
JP2016213440A (ja) * 2015-04-28 2016-12-15 三星エスディアイ株式会社Samsung SDI Co., Ltd. 電極形成用組成物ならびに当該組成物を用いて製造される電極および太陽電池
WO2018047690A1 (fr) * 2016-09-09 2018-03-15 積水化学工業株式会社 Matériau conducteur, corps de structure de connexion, et procédé de production de corps de structure de connexion
KR101814084B1 (ko) * 2016-12-02 2018-01-08 (주)에프엠 세라믹 칩부품의 연성외부전극 형성용 도전성 페이스트 조성물
JP2018106906A (ja) * 2016-12-26 2018-07-05 サムソン エレクトロ−メカニックス カンパニーリミテッド． 電極用ペーストおよび積層セラミック電子部品
KR101831322B1 (ko) * 2017-01-25 2018-02-23 (주)에프엠 니켈도금층이 제거된 연성외부전극 제조용 도전성 페이스트 및 이를 포함하는 수동 전자 부품
JP2020152778A (ja) * 2019-03-19 2020-09-24 タツタ電線株式会社 導電性組成物
JP7125907B2 (ja) 2019-03-19 2022-08-25 タツタ電線株式会社 導電性組成物
CN111128442A (zh) * 2020-01-07 2020-05-08 北京梦之墨科技有限公司 一种液态金属导电浆料及其制备方法、电子器件
US20220254571A1 (en) * 2021-02-05 2022-08-11 Samsung Electro-Mechanics Co., Ltd. Multilayer ceramic electronic component
US11810721B2 (en) * 2021-02-05 2023-11-07 Samsung Electro-Mechanics Co., Ltd. Multilayer ceramic electronic component
US11970631B2 (en) 2021-06-18 2024-04-30 Panasonic Intellectual Property Management Co., Ltd. Conductive paste and conductive film formed using the same
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