WO2014207039A1 - Optoelectronic component and method for producing an optoelectronic component - Google Patents

Abstract

An optoelectronic component (140, 160, 250, 350) is disclosed in various embodiments, said optoelectronic component (140, 160, 250, 350) comprising: an electrically active region (136) having an optically active region (132) and an optically inactive region (134), the electrically active region (136) having at least one electric bus bar (118) that is formed in the optically active region (132); and an encapsulation structure on or above the electrically active region (136), said encapsulation structure having a supporting structure (122) on or above the electrical bus bar (118) in the optically active region (132).

Description

description

Optoelectronic component and method for producing an optoelectronic component

In various embodiments, a

Optoelectronic component and a method for

Producing an optoelectronic component

provided .

An organic optoelectronic device (shown in FIG. 6), for example an OLED, may have an anode 604 and a cathode 608 with an organic functional

Layer system 606 between them. The organic functional layer system 606 may be one or more

Emitterschient / s (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown) each of two or more charge generating layer (CGL) generating layers Charge carrier pair generation, and one or more

Electron block layers (not shown), also referred to as hole transport layer (s) (HTL), and one or more hole block layers (not shown), also referred to as

 Electron transport layer (s) ("electron transport layer" - ETL) to direct current flow

Organic-based devices, such as organic light emitting diodes (organic light emitting diode - OLED), are finding widespread use in general lighting, for example as surface light sources. An organic optoelectronic device conventionally comprises: a first electrode 604 formed on or above a carrier 602. On or above the first electrode 604 is an organic functional layer structure 606

educated . Over or on the organic functional layer structure 606 is a second electrode 608

educated . The second electrode 608 is by means of a electrical insulation 610 from the first electrode 604 electrically isolated. The electrical insulation 610 is configured such that current flow between the first electrode 604 and the second electrode 608 is prevented. The second electrode 608 is physically and electrically connected to a second contact pad 614 and the first electrode 604 is connected to a first contact pad 612.

The organic constituents of organic components, for example organic optoelectronic components, for example an organic light emitting diode (OLED), are often prone to

Dangerous environmental influences, For example, a harmful environmental impact may be a harmful substance to organic substances or organic substances

 Oxygen and / or for example a solvent, for example water. The hermetic shielding of organic optoelectronic surface light sources is important to a storage life, for example of 10 years, or a lifetime in operation, for example of more than 10,000 hours for the optoelectronic

To ensure surface light sources. For protection

A component with a hermetically sealed encapsulation with respect to the harmful environmental influence can be surrounded by harmful environmental influences, for example one

 Thin-film encapsulation, barrier thin-film, barrier layer, encapsulation layer, barrier film, an intrinsically hermetically sealed fabric or mixture of substances or the like. The encapsulation requires permeability values for water and / or oxygen of less than 10 g / cm / d. Organic optoelectronic device are therefore

conventionally encapsulated for protection against water and / or oxygen, ie, hermetically shielded with respect to water and / or oxygen. The areas to be protected can span a very large area. In order to achieve these values, conventional is a laminar lamination (FIG. 7a) or a cavity glass encapsulation (FIG.

used.

7a, b show schematic representations of a

conventional encapsulation of an organic

optoelectronic component,

Fig. 7a shows a conventional method for encapsulating an optoelectronic device 600. On the second

Electrode 608 of an optoelectronic component 600

 {6}, a barrier thin film 700 is formed such that the second electrode 608, the electric

Isolations 610 and the organic functional

Layer structure 606 is surrounded by the barrier film 616. Furthermore, an adhesive layer 706 is applied to a cover 704. The cover 704 is, for example, a laminating glass 704 or a film 704, and the adhesive is an epoxy adhesive. The cover 704 with adhesive layer 706 is then applied to the barrier film 702 (shown in Fig. 7a). As a result, an encapsulated optoelectronic component with a

conventional encapsulation structure 706 with

Barrier thin film 700 and laminated cover 702 formed.

Fig. 7b shows another conventional method for

Encapsulating an optoelectronic device 600. On a cover 704 becomes a moisture-binding

Getter 710 applied and applied in the edge region of the cover 702, a lateral adhesive layer 708. The

Cover 704 with lateral adhesive layer 708 and

Getter 710 is then applied to the optoelectronic device 600, for example to the contact pads 612, 614 (shown in Fig. 7b). This will be a conventional

Cavity glass encapsulation 712 formed.

By an epoxy adhesive and / or its interfaces, however, moisture and / or air (oxygen) through the Encapsulate structure diffuse to the optoelectronic device 600. Furthermore, those are to be protected

Areas in a surface light source very large, so that thereby an increased particle sensitivity is present (shown in Fig.8a, Fig.8b). An optoelectronic

 Device 600 having a conventional encapsulation structure 706 with barrier film 702 and cover 704; and an optoelectronic device 600 having a

Cavity glass encapsulation 712 may be susceptible to failure, for example with respect to the adhesive,

 Particulate contamination and / or visual properties. When a pressure 804 or a curvature 806 on the

Cover 704 acts, such as a protective glass 704 or a lamination glass 704; For example, a particle contamination 802 may be pushed into the organic functional layers of the OLED. This can lead to a short circuit and / or create latent heat spots. Heat points could be considered

Late succession results in spontaneous failures. Mechanically flexible components may have a higher susceptibility to error due to the possibility of curvature.

Conventionally, the number of attempts

Particle contamination in the optoelectronic

To reduce components by the optoelectronic components are produced under particle-poor conditions or in a complex process

particle-contaminated optoelectronic components are tested and sorted out. However, this is the cost-benefit ratio when producing large-area

optoelectronic devices deteriorated.

In a conventional encapsulation structure 706 with

Barrier thin film and laminated cover 702, the adhesive layer 704 has a conventional thickness in a range of 10 μτ to 100 μπι. However, the adhesive layer 704 is not conventionally homogeneous in thickness but has nonuniformity. By means of this non-uniformity of the adhesive layer 704 may be on the side of the cover the adhesive layer 704 interference fringes arise. These interference fringes can be annoying with regard to the visual appearance in the case of transparent optoelectronic components 600.

In various embodiments, a

Optoelectronic component and a method for

Producing an optoelectronic component

provided with which it is possible to increase the mechanical stability of encapsulated optoelectronic devices.

In various embodiments, a

Optoelectronic device provided, the

An optoelectronic component comprising: an electrically active region having an optically active region and an optically inactive region; wherein the electrically active region comprises at least one electrical bus bar formed in the optically active region; an encapsulation structure on or above the electrically active region; wherein the encapsulation structure has a support structure on or above the electrical bus bar in the optically active region. In one embodiment, the optoelectronic component can be designed as an organic light-emitting diode.

In one embodiment, the optoelectronic component may be formed as an organic solar cell,

In one embodiment, the electrically active region may have an electrically functional structure, wherein the electrically functional structure has an organic functional layer structure between a first electrode and a second electrode.

In one embodiment, the organic functional

Layer structure to emit electromagnetic Be formed radiation from a provided electrical energy and / or for generating an electrical energy from an absorbed electromagnetic radiation,

In one embodiment, the organic functional

Layer structure may be formed at least partially in the optically active region. In one embodiment, the electric Samaritan rail may be connected to the first electrode or to the second electrode

be electrically coupled.

In one embodiment, the optoelectronic component may further comprise a first contact pad and a second contact pad, wherein the first contact pad with the first

Electrode and the second contact pad can be electrically coupled to the second electrode. In one embodiment, the first electrode, the second electrode, the electrical busbar, the first contact pad and / or the second contact pad may at least

partially formed in the optically inactive area. In one embodiment, the electrical busbar may be formed in the optically active region such that the electrical busbar is at least partially on or over a portion of the organic functional

Layer structure is formed and / or wherein at least a portion of the organic functional layer structure is formed on or above the electrical busbar.

In one embodiment, the optoelectronic component may have a first electrical busbar and at least one second electrical busbar, wherein the first electrical busbar is electrically coupled to the first electrode and the at least one second electrical busbar is electrically coupled to the second electrode. In one embodiment, the support structure may be formed as a second busbar. In one embodiment, the encapsulation structure may have a cover.

In one embodiment, the cover may be hermetically sealed with respect to water and / or oxygen.

In one embodiment, the cover may be formed as a film.

In one embodiment, the cover may be as a

Glass cover, metal cover or plastic cover to be set up.

In one embodiment, the encapsulation structure may be formed as a thin layer or have a thin layer that is hermetically sealed with respect to water and / or oxygen.

In one embodiment, the encapsulation structure can be at least the areal dimension of the optically active

Have area.

In one embodiment, the cover can be conclusively connected to the electrically functional structure,

for example, cohesively.

In one embodiment, the connection of the cover to the electrically functional structure may be hermetically sealed with respect to water and / or oxygen. In one embodiment, the cover may be connected to the electrically functional structure at least partially in the optically inactive region. In one embodiment, at least one support structure may comprise a substance or a substance mixture which / which

is hermetically sealed with respect to water and / or oxygen. In one embodiment, at least one support structure may comprise or be formed from one of the following materials: a metal, a metal oxide, a ceramic, a

Plastic. In one embodiment, at least one support structure may comprise or be formed from a eutectic substance.

In one embodiment, at least one support structure may comprise or be formed from one or more of the following materials: gallium, indium, tin, chromium, molybdenum, gold, silver and / or aluminum.

In one embodiment, at least one support structure, an adhesive, a plastic and / or a paint

have, for example, a resin, an epoxide, a

Polyacrylate.

In one embodiment, the optoelectronic component can have a first support structure and at least one second support structure

Have support structure.

In one embodiment, the cover can be connected to the electrically functional structure by means of a second support structure and / or a third support structure.

In one embodiment, the cover with the electrically functional structure in such a way by means of another

Support structure connected to that with the first

Support structure and the other support structure at least one cavity between the cover and the electric

functional structure is formed. In one embodiment, the first support structure and the at least one second support structure may be formed such that the distance of the cover to the electrically functional structure is greater than the thickness of the electrically functional structure.

In one embodiment, the cavity may at least partially comprise or be filled with a gas or gas mixture. In one embodiment, the support structure on the

 Cover be formed in the cavity and / or on the electrically active structure.

In one embodiment, the support structure may be the

Support structure mechanically interconnect the cover and the electrically functional structure.

In one embodiment, the support structure may be formed as a conclusive connection of the electrically functional structure with the cover, for example as a cohesive connection.

In one embodiment, at least one functional layer may be formed on the cover in the cavity.

In one embodiment, the functional layer may include

Have getter or be formed from it.

In one embodiment, the getter may comprise or be formed from a zeolite.

In one embodiment, the functional layer

Have scattering centers for electromagnetic radiation emitted by the optoelectronic component or

is absorbed.

In one embodiment, the scattering centers as

Be formed microlenses. In one embodiment, the functional layer may be formed as a bar ierendünnschicht. In one embodiment, the functional layer may be formed as an anti-adhesion layer with respect to water.

In one embodiment, the functional layer may be formed as an anti-adhesion layer with respect to a substance or substance mixture of the at least one support structure.

In one embodiment, the functional layer may be formed as a coupling-in layer or a coupling-out layer with respect to electromagnetic radiation which is emitted or absorbed by the optoelectronic component.

In one embodiment, the functional layer may be formed as a UV protective layer. In one embodiment, the substance or the substance mixture of the functional layer may be elastic or viscoelastic.

In one embodiment, the functional layer may have a higher compression modulus than the organic functional layer structure.

In one embodiment, the functional layer may have a higher compression modulus than the electrically functional structure.

In one embodiment, the functional layer may have a layer thickness which is smaller than the distance of the cover from the electrically functional structure.

In one embodiment, the encapsulation structure may be formed as a barrier thin film and / or an ALD layer or LD layer or have such. In one embodiment, the encapsulation structure may be formed as a cavity encapsulation. In one embodiment, the support structure may have a width similar to the width of the electrical

Busbar is.

In one embodiment, the support structure may be approximately congruent on or over the electrical busbar.

In one embodiment, the support structure may be formed at least partially surrounded by the organic functional layer structure.

In one embodiment, at least one support structure may be at least partially provided with at least one electrical

Busbar electrically coupled and / or mechanically connected.

In one embodiment, at least one second

Support structure may be formed adjacent to the first support structure.

In one embodiment, at least one second

Support structure may be formed over the first support structure.

In one embodiment, at least one second

Support structure with the first support structure electrically

and / or mechanically coupled.

In one embodiment, at least one second

Support structure electrically isolated from the first

Support structure to be formed.

In various embodiments, a method for producing an optoelectronic component provided, the method comprising: forming an electrically active region comprising an optically active region and an optically inactive region; wherein the electrically active region at least one electrical

Busbar is formed having formed, wherein the

 Busbar is formed in the optically active region; Forming an encapsulation structure on or over the electrically active region; wherein the encapsulation structure with a support structure on or above the electrical

Busbar is formed in the optically active region.

In one embodiment of the method, the

Opto-electronic device can be formed as an organic light-emitting diode.

In one embodiment of the method, the

Opto-electronic device can be formed as an organic solar cell.

In one embodiment of the method, forming the electrically active region may include forming an electrically functional structure, wherein the electrically functional structure is an organic functional one

Layer structure between a first electrode and a second electrode.

In one embodiment of the method, the organic functional layer structure may be used to emit electromagnetic radiation from a supplied electrical energy and / or to generate an electrical energy from an absorbed one

electromagnetic radiation can be formed. In one embodiment of the method, the organic functional layer structure can be formed at least partially in the optically active region. In one embodiment of the method, the electrical busbar can be formed electrically coupled to the first electrode or to the second electrode. In one embodiment of the method, the method may further include forming a first contact pad and a second contact pad, wherein the first contact pad with the first electrode and the second contact pad with the second electrode are formed electrically coupled.

In one embodiment of the method, the first

Electrode, the second electrode, the electrical

Busbar, the first contact pad and / or the second contact pad are at least partially formed in the optically inactive area.

In one embodiment of the method, the electrical busbar can be so in the optically active region

in that the electrical busbar is at least partially formed on or over a part of the organic functional layer structure and / or at least part of the organic functional layer structure is on or above the electrical

Busbar is formed.

In one embodiment of the method, the method may further comprise forming a first electrical busbar and at least one second electrical busbar,

In one embodiment of the method, the first

electrical busbar with the first electrode and the at least one second electrical busbar are formed electrically coupled to the second electrode.

In one embodiment of the method, the support structure may be formed as a second busbar. In one configuration of the method, the formation of the encapsulation structure may include forming or applying a cover or may comprise applying a cover to or above the electrical functional structure.

In one embodiment of the method, the cover can be formed hermetically sealed with respect to water and / or oxygen. In one embodiment of the method, the cover can be formed as a film or be set up.

In one embodiment of the method, the cover may be configured as a glass cover, metal cover or plastic cover.

In one embodiment of the method, the

Encapsulation structure is formed as a thin film or forming a thin film, wherein the thin film is hermetically sealed with respect to water and / or oxygen is / is formed.

In one embodiment of the method, the

Encapsulation structure are formed having at least the areal dimension of the optically active region.

In one embodiment of the method, the cover can be conclusive with the electrically functional structure

be connected, for example cohesive.

In one embodiment of the method, the connection of the cover to the electrically functional structure can be hermetically sealed with respect to water and / or oxygen.

In one embodiment of the method, the cover can be connected to the electrically functional structure at least partially in the optically inactive region conclusive. In one embodiment of the method, at least one support structure may comprise a substance or a substance mixture which is hermetically sealed with respect to water and / or oxygen.

In one embodiment of the method, at least one support structure may comprise or be formed from one of the following materials: a metal, a metal oxide, a ceramic, a plastic.

In one embodiment of the method, at least one support structure may comprise or be formed from a eutectic substance.

In one embodiment of the method, at least one support structure can comprise or be formed from one or more of the following materials: gallium, indium, tin, chromium, molybdenum, gold, silver and / or aluminum.

In one embodiment of the method, at least one support structure may comprise or be formed from an adhesive, a plastic and / or a lacquer,

for example, a resin, an epoxy, a polyacrylate.

In one embodiment of the method, the cover can be connected conclusively to the electrically functional structure by means of a second support structure and / or a third support structure.

In one embodiment of the method, the cover can be connected to the electrically functional structure by means of a further support structure in such a way that at least one cavity between the cover and the one with the first support structure and the further support structure

functional structure is formed. In one embodiment of the method, the first

Support structure and the at least one second support structure are formed such that the distance of the cover to the electrically functional structure is greater than the thickness of the electrically functional structure.

In one embodiment of the method, the cavity can be at least partially filled with a gas or gas mixture.

In one embodiment of the method, the support structure may be formed on the cover in the cavity and / or on the electrically active structure. In one embodiment of the method, the support structure may mechanically connect the support structure to the cover and the electrically functional structure.

In one embodiment of the method, the support structure may be formed as a conclusive connection of the electrically functional structure with the cover, for example as a material connection.

In one embodiment of the method, at least one functional layer may be provided on the cover in the cavity

be formed.

In one embodiment of the method, the functional layer can have a getter or be formed therefrom.

In one embodiment of the method, the getter may comprise or be formed from a zeolite.

In one embodiment of the method, the functional layer can be formed in this way _. that the functional

Layer of scattering centers for electromagnetic radiation

wherein the electromagnetic radiation is emitted or absorbed by the optoelectronic component. In one embodiment of the method, the scattering centers can be formed as microlenses. In one embodiment of the method, the functional layer may be formed as a barrier thin film.

In one embodiment of the method, the functional layer may be formed as a non-stick splint

in terms of water.

In one embodiment of the method, the functional layer can be formed as an anti-adhesive layer

with regard to a substance or substance mixture of the at least one support structure,

In one embodiment of the method, the functional layer can be formed as a coupling-in layer or a coupling-out layer with respect to electromagnetic radiation emitted by the optoelectronic component

emitted or absorbed.

In one embodiment of the method, the functional layer may be formed as a UV protection layer.

In one embodiment of the method, the substance or the substance mixture of the functional layer can be elastic or

be formed viscoelastic. In one embodiment of the method, the functional layer can be formed such that the functional

Layer has a higher compression modulus than the organic functional layer structure. In one embodiment of the method, the functional layer can be formed such that the functional layer has a layer thickness which is smaller than that Distance of the cover to the electrically functional

Structure.

In one embodiment of the method can

Encapsulation structure may be formed as a barrier thin film and / or an ALD layer or MLD layer or have such a.

In one embodiment of the method, the

Encapsulation structure as a cavity encapsulation

be formed.

In one embodiment of the method, the support structure may have a width which is similar to the width of the electrical busbar.

In one embodiment of the method, the support structure may be approximately congruent on or above the electrical

Busbar are formed.

In one embodiment of the method, the support structure may be formed such that the support structure is at least partially surrounded by the organic functional layer structure.

In one embodiment of the method, at least one support structure can at least partially be electrically coupled to at least one electrical busbar and / or mechanically connected.

In one embodiment of the method, the method may include forming a first support structure and at least one second support structure. In one embodiment of the method, at least one second support structure adjacent to the first support structure

be formed. In one embodiment of the method, at least one second support structure may be above the first support structure

be formed. In one embodiment of the method, at least one second support structure can be formed electrically and / or mechanically coupled to the first support structure.

In one embodiment of the method, at least one second support structure may be formed electrically insulated from the first support structure.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

Figures la-d schematic cross-sectional views

 optoelectronic components according to

 various embodiments;

Figures 2a-b are schematic cross-sectional views

 Optoelectronic components in the process for producing an optoelectronic

 Component, according to various

 Embodiments;

Figures 3a-b are schematic cross-sectional views

 Optoelectronic components in the process for producing an optoelectronic

 Component, according to various

 Embodiments;

Figures 4a-d schematic cross-sectional views

optoelectronic components, according to various embodiments; Figures 5a-c Schematic cross-sectional views

 optoelectronic components, according to

 various embodiments;

FIG. 6 shows schematic cross-sectional views of a

 conventional optoelectronic component;

Figures 7a-b are schematic cross-sectional views of a

 conventional optoelectronic component and

Figures 8a-b are schematic cross-sectional views of a

 conventional optoelectronic component. In the following detailed description, reference is made to the accompanying drawings, which form a part hereof and in which is by way of illustration specific

Embodiments are shown in which the invention can be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). There

Components of embodiments in number

different orientations can be positioned, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the

Scope of the present invention is defined by the appended claims. In the context of this description, the terms

 "connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

In the context of this description can under a

Optoelectronic component an embodiment of a

electronic component can be understood, wherein the optoelectronic component has an optically active region. The optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.

In various embodiments, an optoelectronic component as an organic light emitting diode (OLED), an organic photovoltaic system, such as an organic solar cell, an organic sensor, an organic field effect transistor (OFET) and / or organic electronics be educated. The organic field effect transistor may be an all-OFET in which all

 Layers are organic. An organic, electronic component may have an organic functional layer system, which is synonymously also referred to as an organic functional layer structure. The organic

Functional layer structure may include or be formed from an organic substance or mixture of organic substances, for example, to provide electromagnetic radiation from a supplied electric current or to provide an electric current from a provided electromagnetic energy

Radiation is set up. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the electromagnetic Radiation emitting device, for example, as a light emitting diode (LED) as an organic light emitting diode

OLED), as a light-emitting transistor or as

be formed organic light emitting transistor. The light-emitting device may be in different

Embodiments be part of an integrated circuit. Furthermore, a plurality of light-emitting

Be provided components, for example housed in a common housing.

In the context of this description, an organic substance, regardless of the respective state of aggregation, can be present in chemically uniform form

characteristic physical and chemical properties characterized compound of the carbon. Furthermore, in the context of this description, under an inorganic substance, irrespective of the particular state of aggregation, in a chemically uniform form

present, characterized by characteristic physical and chemical properties of the compound without

Carbon or simple carbon compound can be understood. In the context of this description, an organic-inorganic substance (hybrid substance) can be a

irrespective of the particular state of aggregation, in chemically uniform form, characterized by characteristic physical and chemical properties, with connecting parts containing carbon and being free of carbon. In the context of this description, the term "substance" encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance Furthermore, in the context of this description, a mixture may be understood as meaning components of two or three components more different substances, whose

For example, components are very finely divided. As a class of substances is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid

Understand substance (s). The term "material" can be used synonymously with the term "substance". In various embodiments, an adhesive may include or be formed from one of the following: a casein, a glutin, a starch, a cellulose, a resin, a tannin, a lignin, an organic matter

Oxygen. Nitrogen, chlorine and / or sulfur

Metal oxide, a silicate, a phosphate, a borate.

In various embodiments, an adhesive may be used as a hot melt adhesive, for example, a solvent-containing

Wet adhesive, a contact adhesive

Dispersion Adhesive, a water-based adhesive, a

Plastisol; a polymerization adhesive, for example, a cyanoacrylate adhesive, a methyl methacrylate adhesive, an anaerobic curing adhesive, an unsaturated polyester, a radiation curing adhesive; a polycondensation adhesive f, for example, a phenol-formaldehyde resin adhesive, a silicone, a silane-crosslinking polymer adhesive

Polyimide adhesive, a polysulfide adhesive f; and / or a polyaddition adhesive, for example an epoxy resin adhesive, a polyurethane adhesive, a silicone

Pressure-sensitive adhesive; have or be formed from it.

Fig. La-d show schematic cross-sectional views

optoelectronic devices, according to various

Embodiments.

Shown are schematic cross-sectional views of an optoelectronic component according to one of

Descriptions of FIGS. 1 to 5. The optoelectronic component 140, 160 may be to a

Picking up and / or providing electromagnetic

Be arranged radiation, wherein the optoelectronic component 140, 160 is arranged an electrical energy to generate from a received electromagnetic radiation and / or to generate electromagnetic radiation from a provided electrical energy. In one embodiment, the optoelectronic

Component may be formed as a light emitting device 140, 160, for example in the form of an organic light emitting diode 140, 160. In various embodiments, the organic light emitting diode 140, 160 (or the light emitting

Components according to the above or below

described embodiments) as a so-called top emitter and bottom emitter,

For example, a transparent top emitter or a

transparent bottom emitter. A top and / or bottom emitter can also be considered optically transparent or

translucent component, for example, a transparent or translucent organic light-emitting diode 140, 160, be designated.

In various embodiments, the

Optoelectronic component 140, 160 may be formed on or above a carrier 102.

The carrier 102 may be used, for example, as a support for electronic elements or layers, for example

light-emitting elements, serve. For example, the carrier 102 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable material. Further, the carrier 102 may be a

Plastic film or a laminate with one or more plastic films or be formed from it. The plastic may be one or more polyolefins (eg, high or low density polyethylene (PE) or

Polypropylene (PP)) or be formed therefrom.

Furthermore, the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), Polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom. The carrier 102 may be one or more of the above

have mentioned substances.

The carrier 102 may comprise or be formed of a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel. A carrier 102 comprising a metal or a

 Metal compound may also be formed as a metal foil or a metal-coated foil.

The carrier 102 may be translucent or even transparent. In a carrier 102, a metal

For example, the metal may be considered a thin one

Layer be transparent or translucent layer formed and / or the metal to be part of a mirror structure. The carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way. For example, a carrier 102 having a mechanically rigid region and a mechanically flexible region may be patterned, for example by having the rigid region and the flexible region of different thickness.

A mechanically flexible carrier 102 or the mechanically flexible region may, for example, be a foil

be formed, for example, a plastic film,

Metal foil or a thin glass.

In one embodiment, the carrier 102 may be referred to as

Waveguide for electromagnetic radiation of the

Optoelectronic component 140, 160 may be formed, for example, be transparent or translucent with respect to the provided electromagnetic radiation of the optoelectronic component 140, 160. On or above the carrier 102 may be in different

Embodiments optionally a barrier layer

be arranged (not shown), for example, on the side of the organic functional layer structure 106 and / or on the side facing away from the organic functional layer structure 106.

The barrier layer may comprise or consist of one or more of the following substances: aluminum oxide,

 Zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride,

 Silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene

terephthalamide), nylon 66, and mixtures and alloys thereof. In various embodiments, the

Barrier layer by means of an atomic layer deposition method (atomic layer deposition - ALD) and / or a

Molecular deposition (molecular layer deposition - MLD) are formed. In various embodiments, the barrier layer may have two or more identical and / or different layers, or layers,

for example next to each other and / or one above the other,

For example, as a barrier layer structure or a barrier stack, for example, structured. Further, in various embodiments, the barrier layer may have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness in a range of about 10 nm to about 200 nm, for example a layer thickness of about 40 nm.

In various embodiments, a further cover (not shown) may be provided on or above the barrier layer and / or the barrier layer may be formed as a further cover, for example as one

Cavity glass encapsulation. In various embodiments, on or above the barrier layer (or, if the barrier layer is not

is present (shown), on or above the carrier 102), the first electrode 104 (for example in the form of a first electrode layer 104) to be applied.

The first electrode 104 (hereinafter also referred to as lower

Electrode 104) may be made of an electric

Conductive material can be formed or how

for example, from a metal or a conductive transparent oxide (TCO) or a layer stack of several layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide,

Titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as ZnO, Sn0 ₂ , or 1 ^ 0 _{3 also} include ternary

Metal-oxygen compounds, such as AIZnO, Z 2Sn0 _4, CdSnO _ß, ZnSnOs, Mgl ₂ 0 _4, Galn0 _3, Z ^ ^ Os Ir or

Ιη ₄ 3η ₃ 0 ₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various Ausführungserl.

Furthermore, the TCOs do not necessarily correspond to one

stoichiometric composition and may also be p-doped or n-doped.

In various exemplary embodiments, the first

Electrode 104 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Cr, Mo, Ca, Sm or Li, and

Compounds, combinations or alloys of these substances.

In various embodiments, the first

Electrode 104 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is one Silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO ultrahigh-layer.

In various embodiments, the first

Electrode 104 one or more of the following substances

alternatively or additionally to the abovementioned substances: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 104 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first

Electrode 104 and the carrier 102 may be translucent or transparent. For example, in the case where the first electrode 104 comprises or is formed of a metal, the first electrode 104 may have a layer thickness of less than or equal to about 25 nm, for example one

Layer thickness of less than or equal to approximately 20 nm,

For example, the first electrode 104 may have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness of greater than or equal to about 15 nm

In embodiments, the first electrode 104 may have a layer thickness in a range of about 10 nm to about 25 nm, for example a layer thickness in a range of about 10 nm to about 18 nm, for example a layer thickness in a range of about 15 nm to about 18 nm Further, in the case where the first electrode 104 has or is formed of a conductive transparent oxide (TCO), the first electrode 104 may have a layer thickness in a range of about 10 nm, for example to about 100 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of

about 100 nm to about 150 nm.

Furthermore, in the case where the first electrode 104 is made of, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes which may be combined with conductive polymers or of graphene may be used. Layers and composites are formed, the first electrode 104, for example a

Layer thickness in a range of about 1 nm to about 100 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm,

For example, a layer thickness in a range of

about 40 nm to about 250 nm.

The first electrode 104 can be used as the anode, ie as

hole-injecting electrode may be formed or as

 Cathode, that is, as an electron-initiating electrode.

On or above the first electrode 104, an organic functional layer structure 106 is shown.

The organic functional layer structure 106 may comprise one or more emitter layers (not shown), for example with fluorescent and / or

phosphorescent emitters, as well as one or more

Hole line layers (also referred to as

 Hole transport layer (s)) (not shown). In

various embodiments may alternatively or additionally comprise one or more electron conduction layers (also referred to as electron transport layer (s))

be provided (not shown).

Examples of emitter materials used in the

optoelectronic component 140, 160 according to various Embodiments for the emitter layer (s) can be used include organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2-, 5-substituted poly-p-phenylenevinylene) and metal complexes, for example

Iridium complexes such as blue phosphorescent FIrPic

(Bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtb-bpy) 3 * 2 (PF ₆ ) (tris [4, 4'-di-tert-butyl {2,2'-bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4, 4 -Bis [4 - (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9, 10 -bis [N, N-di- (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4 - Dicyanomethylene) - 2-methyl-6-julolxdyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters are for example by means of a thermal evaporation, an atomic layer deposition method and / or a

 Molecular deposition process separable. It is also possible to use polymers which in particular can be deposited by means of a wet-chemical process, such as, for example, a spin-coating process (also referred to as spin coating). The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable

Emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) of the

Optoelectronic component 140, 160 may for example be selected so that the optoelectronic component 140, 160 emits white light. The emitter layer (s)

may / may several different colors (for example, blue and yellow or blue, green and red) emitting emitter materials alternatively, the emitter layer (s) may also be composed of several sub-layers, such as a blue-fluorescent emitter layer or blue-phosphorescent emitter layer, a green-phosphorescent emitter layer and a red-phosphorescent emitter layer. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided in the beam path through this

Layers generated primary emission to arrange a converter material that at least partially absorbs the primary radiation and emits a secondary radiation of different wavelength, so that from a (not yet white)

Primary radiation by the combination of primary radiation and secondary radiation gives a white color impression.

The organic functional layer structure 106 may generally include one or more electroluminescent layers. The one or more electroluminescent

Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules, or a combination of these materials. For example, the organic functional layer structure 106 may include one or more

electroluminescent layers on iron, as

Hole transport layer is or are designed so that, for example, in the case of an OLED an effective

Locherinj tion in an electroluminescent layer or an electroluminescent region is made possible.

Alternatively, in various embodiments, the organic functional layer structure 106 may include one or more functional layers, which may be referred to as a

Electron transport layer is or are designed so that, for example, in an OLED an effective

Elektroneninj tion is made possible in an electroluminescent layer or an electroluminescent region. As a material for the hole transport layer, for example, tertiary amines, Carbazoderivate, conductive polyaniline or Polythylendioxythiophen can be used. In different Embodiments may or may not include the one or more electroluminescent layers

be carried out electroluminescent layer. In various embodiments, the

 Hole transport layer may be applied to or over the first electrode 104, for example, deposited, and the

Emitter layer may be applied to or over the hole transport layer, for example deposited. In different embodiments you can

 Electron transport layer applied to or over the emitter layer, for example deposited.

In various embodiments, the organic functional layer structure 106 (ie, for example, the sum of the thicknesses of hole transport layer (s) and

Emitter layer (s) and electron transport layer (s) have a layer thickness of at most about 1, 5 μτ,

for example, a layer thickness of at most about 1, 2 μτα, for example, a layer thickness of ma imal about 1 μνα, for example, a layer thickness of at most about 800 nm, for example, a layer thickness of at most about 100 nm, for example, a layer thickness of about 400 nm, for example, a layer thickness of at most about 300 nm.

For example, in various embodiments, the organic functional layer structure 106 may include a

Stack of several directly stacked

organic light-emitting diode units (OLED unit) on iron, wherein each OLED unit may for example have a layer thickness of at most about 1.5 μτη, for example, a layer thickness of at most about 1, 2 μχη, for example, a layer thickness of at most about 1 μτα, for example, a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 100 nm, for example a layer thickness of approximately approximately 400 nm, for example a layer thickness of approximately approximately 300 nm

various embodiments, the organic functional layer structure 106, for example, a

Stack of two, three or four directly on top of each other

have arranged OLED units, in which case

For example, organic functional layer structure 106 may have a layer thickness of at most about 3 μτη.

The optoelectronic device 140, 160 may optionally include generally organic functional layer structures, for example, disposed on or over the one or more emitter layers or on or above the electron transport layer (s) serving to enhance the functionality and hence the efficiency of the electron transport layer

optoelectronic component 140, 160 to be further improved. The other organic functional layer structures can be, for example, by means of a

 Charge Pair Generation Layer Structure (Charge

generating layer CGL).

On or above the organic functional layer structure 106 or optionally on or above the one or more other organic functional layers

Layer structures may be the second electrode 108

 be applied (for example in the form of a second electrode layer 108).

The second electrode 108 is by means of an electric

Insulation 110 electrically isolated from the first electrode 104. In various embodiments, the second

Electrode 108 have the same substances or be formed therefrom as the first electrode 104, wherein in

various embodiments metals especially

are suitable .

In various embodiments, the second

Electrode 108 (for example, in the case of a metallic second electrode 108), for example, a layer thickness have less than or equal to about 200 nm,

for example, a layer thickness of less than or equal to approximately 150 nm, for example a layer thickness of less than or equal to approximately 100 nm, for example a layer thickness of less than or equal to approximately 10 nm, for example a layer thickness of less than or equal to approximately 45 nm,

for example, a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm,

For example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.

The second electrode 108 may generally be formed similarly to, or different from, the first electrode 104. The second electrode 108 may be made from one or more embodiments in various embodiments

be formed of a plurality of substances and with the respective layer thickness, as described above in connection with the first electrode 104. In different

Embodiments, the first electrode 104 and the second electrode 108 are both formed translucent or transparent.

The second electrode 108 can be used as anode, ie as

hole-injecting electrode may be formed or as

Cathode, so as an electron injecting electrode.

The second electrode 108 may be electrically connected to a second contact pad 114, to which a second contact pad 114 may be connected

electric potential (which is different from the first electric potential) provided by the

Energy source, can be applied. The second electrical potential may for example have a value such that the difference to the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

A contact pad 112, 114 may be electrically and / or physically connected to an electrode 104, 108. However, a contact pad 112, 114 may also be configured as a region of an electrode 104, 106 or a bonding layer. The first electrode 104 may be electrically connected to a first electrical contact pad 112, to which a first electrical potential can be applied - provided by a power source (not shown), for example a current source or a voltage source. The first contact pad 112 may be in the geometric edge region of the optically active

Region 132 of the OLED 140, 160 may be formed on or above the carrier 102, for example laterally adjacent to the first electrode 104. Alternatively, the first electrical

Potential can be applied to the carrier 102 or be and then applied indirectly to the first electrode 104 or be. The first electrical potential may be, for example, the ground potential or another

be given reference potential. In various embodiments, the second

 Electrode 108 to be physically and electrically connected to a second contact pad 114.

The first contact pad 112 is by means of electrical

Insulators 110 are electrically isolated from the second electrode 108. In other words, the electrical insulation 110 may be configured such that a current flow between two electrically conductive regions,

for example, between the first electrode 104 and the second electrode 108 is prevented. The substance or the

Substance mixture of the electrical insulation may be, for example, a coating or a coating agent, for example a polymer and / or a lacquer. The paint can, for example have a coatable in liquid or in powder form coating material, for example, have a polyimide or be formed from it. The electrical

Insulations 110 can be applied or formed, for example, lithographically or by means of a printing method, for example structured. The printing method may include, for example, inkjet printing (inkjet printing), screen printing and / or pad printing.

In one embodiment, an electrical insulation 110 may be optional, for example, in forming the

optoelectronic component 140, 160 with a suitable mask process.

The contact pads 112, 114 can be mixed as a substance or a substance or a substance mixture similar to the first

Electrode 104 and / or the second electrode 108 or be formed therefrom, for example as a

Metal layer structure comprising at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr); or molybdenum-aluminum-molybdenum (Mo-Al-Mo), silver-magnesium (Ag-Mg), aluminum. The contact pads 112, 114 may, for example, a

Contact surface, a pin, a flexible printed circuit board

Clamp, a clamp or another electrical

Have connecting means or be formed. The electrical functional structure 130, 150 (shown in FIG. 1 a and FIG. 1 c) can be understood approximately as the region of the optoelectronic component 140, 160 in which an electric current flows for the operation of the optoelectronic component 140, 160. In different

Embodiments may be the electrically functional

Structure, the first electrode 104, the second electrode 108 and the organic functional layer structure 106 have. In various embodiments, the optoelectronic component may have an optically active region

132 have. Approximately the region of the optoelectronic component 140, 160 with organic functional

 Layer structure 106 on or above carrier 102 may be referred to as optically active region 132.

Approximately the region of the optoelectronic component 140, 160 without organic functional layer structure 106 on or above the carrier 102 may be referred to as optically inactive region 134. The optically inactive region 134 may, for example, be arranged flat next to the optically active region 112. The optically inactive region 134 may comprise, for example, ontaktpads 112, 114 or insulator layers 110, 116 for electrically contacting the organic functional layer structure 106. In other words, in the geometric border area, the

Optoelectronic component 140, 160 may be formed such that contact pads 112, 114 are formed for electrically contacting the optoelectronic component 140, 160, for example by electrically conductive layers, for example contact pads 112, 114, electrodes 104, 108 or the like in the optically inactive region 134 at least

partly uncovered.

The region of the optoelectronic component 140, 160 on or above the carrier 102 with the optically active region 132 and the optically inactive region 134 may be referred to as the electrically active region 136.

An optoelectronic component 140, 160, which

at least partially transmissive, for example

transparent or translucent, is formed, for example, a transmitting carrier 102, transmitting

Electrodes 110, 114, a transmissive, organic functional layer structure 106, and a transmissive barrier thin-film layer 116 may be two-dimensional, optically active Have sides - in the schematic cross-sectional view of the top and bottom of the optoelectronic

 Component 140, 160. The optically active region 132 of an optoelectronic

However, component 140, 160 can also have only one optically active side and one optically inactive side, for example in the case of an optoelectronic component 140, 160, which is designed as a top emitter or bottom emitter, for example by the second electrode 108 or the barrier thin film is formed on the carrier 102 reflective of provided electromagnetic radiation. In various embodiments, a barrier thin film 116 may be formed on or over the second electrode 108

be arranged (shown in Fig. La, b) such that the second electrode 108, the electrical insulation 110 and the organic functional layer structure 106 are surrounded by the barrier film 116, i. in conjunction with barrier film 116 are included with the carrier 102.

Under a "barrier thin film" 116 or a "barrier thin film" 116 may be used in the context of this description

For example, a layer or a layer structure can be understood which is suitable for forming a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. In other words, that is

 Barrier thin layer 116 is formed such that it of OLED-damaging substances such as water, oxygen or

Solvent can not be penetrated or at most at very low levels.

According to an embodiment, the barrier thin film 116 may be formed as a single layer (in other words, as

Single layer) may be formed. According to an alternative According to an embodiment, the barrier skin layer 116 may comprise a plurality of sublayers formed on one another. In other words, according to one embodiment, the

Barrier thin film 116 as a stack of layers (stack)

be educated. The barrier film 116 or one or more sublayers of the barrier film 116 may be formed, for example, by a suitable deposition process, e.g. by means of a

Molecule Layer Separation Method (MLD),

Atomic Layer Deposition Method (ALD) according to an embodiment, e.g. Plasma Enhanced Atomic Layer Deposition (PEALD) or a plasma-less atomic layer deposition (PLALD) method, or by means of a chemical vapor deposition (Chemical Vapor Deposition

 (CVD)) according to another embodiment, e.g. one

plasma enhanced chemical vapor deposition (PECVD) or plasmaless vapor deposition (plasma-less

Chemical Vapor Deposition (PLCVD)), or alternatively by other suitable deposition methods.

By using an atomic layer deposition (ALD) and / or a molecular layer deposition (MLD) process, very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses in

Atomic layer area lie.

According to one embodiment, in a

Barrier thin layer 116 having multiple sublayers, all sublayers formed by an atomic layer deposition process and / or a molecule layer deposition process (MLD). A layer sequence comprising only ALD layers and / or MLD layers can also be referred to as "nanolaminate"

be designated.

According to an alternative embodiment, in a

Barrier thin film 116, which has several sublayers on it, one or more sub-layers of the barrier skin layer 116 by a deposition method other than one

Atomic layer deposition processes are deposited,

for example by means of a gas phase separation process.

The barrier film 116 may, according to one embodiment, have a film thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a film thickness of about 10 nm to about 100 nm according to a

Embodiment, for example, about 40 nm according to an embodiment,

According to an embodiment in which the barrier thin-film layer 116 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another

Design, the individual sub-layers of

Barrier thin layer 116 different layer thicknesses on iron. In other words, at least one of

Partial layers may have a different layer thickness than one or more other of the partial layers.

The barrier thin-film layer 116 or the individual partial layers of the barrier thin-film layer 116 may, according to one embodiment, be formed as a translucent or transparent layer. In other words, the barrier film 116 (or the individual sub-layers of the barrier film 116) may be made of a translucent or transparent substance (or mixture that is translucent or transparent). According to one embodiment, the barrier thin layer 116 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the

Barrier thin layer 116 have one of the following substances or be formed from: alumina, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide

Lanthanum oxide, silicon oxide, silicon nitride,

Silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys the same . In various embodiments, the barrier film layer 116 or (in the case of a

Layer stack with a plurality of sub-layers) one or more of the sub-layers of the barrier film 116 have one or more high-refractive materials, in other words one or more high-level materials

Refractive index, for example, with a refractive index of at least 2. It should also be noted that in various

 Embodiments also completely on a barrier thin film 116 can be dispensed {shown in Fig. Lc, d). In such an embodiment, the optoelectronic

Component device, for example, another

Have encapsulation structure, whereby a

 Barrier thin film 116 may be optional, for example, a cover, such as a Kavitätsglasverkapselung or metallic encapsulation. On or above the electrically functional structure 130, 150, for example at least partially on or above the optically active region 132 and / or at least partially on or above the optically inactive region 134, a getter layer may be arranged (not shown) such that the getter layer hermetically seals the electrically functional structure 130, 150 with respect to harmful environmental influences, for example the diffusion rate of water and / or

Oxygen to the barrier thin film 116 and / or the electrically functional structure 130, 150 toward reduced.

In various embodiments, the getter layer may comprise a matrix and a getter distributed therein

exhibit. In various embodiments, the gettering

Layer translucent, transparent or opaque be formed and a layer thickness of greater than about 1 m. have, for example, a layer thickness of several μτ. In According to various embodiments, the matrix of

Getter layer have a lamination adhesive.

In the getter layer can be in different

Embodiments still light scattering particles

be embedded, which can lead to a further improvement of the color angle distortion and the Auskoppeleffizienz. In various embodiments, as

light-scattering particles, for example dielectric

Such as metal oxides such as silicon oxide (S1O2), zinc oxide (ZnO), zirconium oxide (Zr0 ₂ ), indium tin oxide <ITO) or indium zinc oxide (IZO), gallium oxide (Ga20 _x ) alumina, or titanium oxide. Other particles may be suitable, provided that they have a

Have refractive index, which is different from the effective refractive index of the matrix of the translucent layer structure of the getter layer, for example, air bubbles, acrylate, or glass bubbles. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

In various exemplary embodiments, an electrically insulating layer (not shown) may also be present between the second electrode 108 and the getter layer.

be applied or be, for example, SiN, SiOx or

SiNOx, for example, with a layer thickness in a range of about 300 nm to about 1.5 μνα, for example, with a layer thickness in a range of about 100 nm to about 1 μτη to protect electrically unstable substances, for example during a wet chemical process.

In various embodiments, the optically active region 132 may be at least partially free of gettering layer, for example, when the gettering layer is opaque and the optically active region 132

is formed transparent and / or translucent. Farther For example, the optically active region 132 may be at least partially free of gettering layer to save gettering layer.

Furthermore, in various embodiments

additionally one or more input / output coupling layers may be formed in the organic, optoelectronic component 140, 160, for example an external outcoupling foil on or above the carrier 102 (not shown) or an internal outcoupling layer (not shown) in FIG

Layer cross-section of the optoelectronic component 140, 160. The input / output coupling layer may have a matrix and scattering centers distributed therein, wherein the middle

Refractive index of the input / outcoupling layer is greater than the average refractive index of the layer from which the

Electromagnetic radiation is provided.

In the event that, for example, a light-emitting monochromatic or limited in the emission spectrum

Optoelectronic device is to be provided, it is sufficient that the organic fnktionelle

 Layer structure at least in a portion of the

Wavelength range of the desired monochrome light or translucent for the limited emission spectrum. In various embodiments, the

optoelectronic component 130, 140, 150, 160 a

electrical busbar 118 on or above the first

Electrode 118 (shown) or organic radioactive layered structure 106 (not shown). In various embodiments, the electrical

Busbar 118 by means of an electrical insulation 120 with respect to further layers of the optoelectronic

Component 130, 140, 150, 160 be electrically isolated. In various embodiments, the electrical busbar 118 may be formed such that the

electrical busbar 118 is at least partially surrounded by organic functional layered structure 106. The electrical busbar 118 can be used to increase the lateral current distribution in the optoelectronic

Be configured device, for example, if the first electrode 104 and / or the second electrode 108 a

have / has electrical sheet resistance, which would prevent large-scale formation of the optically active region 132. The electrical busbar 118 may be electrically connected to one of the electrodes 104, 108, for example. In various embodiments, optoelectronic device 130, 140, 150, 160 may include two or more electrical busbars, wherein the plurality of electrical busbars may be associated with the same or different electrical busbars.

in terms of the electrical potential of the electrodes, different electrodes may be electrically coupled.

In various embodiments, on or above the electrically functional structure 130, 150 at

Encapsulation structure may be formed, wherein the

Encapsulation structure has a first support structure 122 on or above the electrical busbar 118.

In an exemplary embodiment illustrated in FIG. 1b, the first electrode 104, the electrical busbar 118, the organic functional layer structure 106 and the second electrode 108 are at least partially connected by means of a

 Barrier thin film 116 encapsulated. On or above the

Barrier thin film 116, an encapsulation structure 142 may be formed. The barrier film 116 may be formed on the carrier 102 according to any of the embodiments of the barrier film.

In various embodiments, the support structure (122) may be disposed over the electrical bus bar (118) such that the bus bar (118) engages the bus bar (118)

Support structure (122) or the support structure (122) the

 Busbar (118) completely covered laterally. In

According to various embodiments, the support structure (122) may laterally over the electrical busbar (118) be arranged that at least part of the

Support structure (122) can be projected onto the busbar (118). In various embodiments, the support structure (122) and the bus bar (118) may overlap. It is by means of such an arrangement

For example, it is possible to provide the optoelectronic component with an increased light output.

The encapsulation structure 142 may include a cover 124

which is applied or formed over the electrically functional structure 130.

A cover 124 may be, for example, a glass cover 124, a metal foil cover 124 or a sealed plastic film cover 124.

The cover 124 may be hermetically sealed with respect to water and / or oxygen. The cover 124 may be formed by a second support structure

128 with the barrier film 116 (shown in FIG. 1b), with contact pads 112, 114 (shown in FIG. 1 d) or the electrodes 104, 108 (not shown), for example, being materially connected.

In the exemplary embodiment, in which the cover 124 is connected in a conclusive manner to the barrier thin film, the second support structure 128 can be embodied, for example, as one

Be formed adhesive layer. The second support structure can seal the electrically functional structure 130 flat and hermetically with respect to harmful environmental influences, for example the diffusion rate of water and / or

Reduced oxygen to the barrier layer 116 down. The cover 124 may, for example, on the

Barrier thin layer 116 may be glued with an adhesive 128, for example, be laminated. The cover 124 may, for example, as a glass cover, a

Metal cover and / or plastic cover formed be. The cover 124 may, for example, be structured, for example as a cavity glass.

The barrier film 116 and / or the cover 124 may be formed such that the

included layers hermetically harmful

Environmental influences are sealed, for example, in terms of water and / or oxygen. In one embodiment, a cover 124,

For example, made of glass, the second support structure 128 as a frit connection 128 (engl., glass frit

Bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometric edge regions of the electrically active region 136 may be formed.

In various embodiments, the second

Support structure be translucent and / or transparent and have a layer thickness of greater than about 1 μτη, for example, a layer thickness of several μνα. In various embodiments, the second

Support structure have a lamination adhesive or be such. In the first support structure 122 and / or the second

Support structure 128 may be in different

Embodiments still light scattering particles

embedded, which can lead to a further improvement of the color angle distortion and the Auskoppeleffizienz.

In various embodiments, as

light-scattering particles, for example dielectric

Such as metal oxides such as silicon oxide (SiC> 2), Zinko id (ZnO), zirconium oxide (Zr0 ₂ ), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga20 _x ) may be provided as scattering Alumina, or titania. Other particles may be suitable, provided that they have a Have refractive index, which is different from the effective refractive index of the matrix of the translucent layer structure, for example, air bubbles, acrylate, or glass bubbles. Furthermore, for example, metallic nanoparticles,

Metals such as gold, silver, iron nanoparticles, or

The like may be provided as light-scattering particles.

In various embodiments, an electrically insulating layer (not shown) may be or may be applied between the second electrode 108 and the second support structure 128 or between the second electrode and the first support structure, for example SiN, SiO _x ,

SiNO _x , for example with a layer thickness in a range of about 300 nm to about 1.5 μχα, for example with a layer thickness in a range of about 100 nm to about 1 μτη to protect electrically unstable substances, for example during a wet chemical process.

In various embodiments, the first

Support structure 122 and / or the second support structure 128 may be configured such that the second support structure 128 has a refractive index that is smaller than that

Refractive index of the cover 124. Such a first

Support structure 122 and / or such a second support structure 128 may comprise, for example, a low-refractive adhesive, for example an acrylate containing a

Refractive index of about 1, 3 has. The first

However, support structure 122 and / or second support structure 128 may also be, for example, a high refractive index

Adhesive on iron, for example, which has high refractive, non-diffusing particles and a middle

Refractive index, which is about the middle

Refractive index of the organic functional layer structure corresponds, for example in a range of about 1, 7 to about 2, 0 or greater. Furthermore, a plurality of different adhesives in the first support structure 122 and / or the second support structure 128, which form an adhesive layer sequence.

In various embodiments, the / may

Cover 124, the first support structure 122 and / or the second support structure 128 have a refractive index (for example, at a wavelength of 633 nm) of 1.55.

In various embodiments, between the

Cover 124 and the electrically functional structure 31, 150 a cavity 126 may be formed. The cavity 126 may comprise a gas, gas mixture and / or a functional layer (not shown). The cavity 126 can

For example, be partially or completely filled by means of the gas, gas mixture and / or the functional layer.

The cover 12, the distance of the cover 124 to the electrically functional structure 130, 150; the

 Kompressionsmodu1 of the substance or the mixture of substances in the cavity 126 and / or the lateral distance of the first

 Support structure 122 to the second support structure 128 are formed such that the cover 124 can not or only with the increased force mechanically to the electrically functional structure 130, 150 curved or bent. The formation of the first support structure 122 can already increase the force required to bend the cover down to the electrically functional structure 130, 150. In one embodiment, the functional layer may include a getter, that is, configured as a getter layer. Au or over the getter layer at least partially the cover 124 is arranged. In various embodiments, the getter layer may be at least partially of at least a second one

Support structure 128 may be surrounded, for example, such that the getter layer has no surface to air,

for example, be completely surrounded by lateral.

In the context of this description, a getter layer may include or be formed from a getter. A getter

For example, a layer having a getter may have a getter in the form of particles distributed in a matrix. In the context of this description, a "getter" may comprise a substance or a substance mixture which absorbs harmful substances and / or harmful mixtures of substances, for example oxygen or the water of atmospheric moisture, but a getter may also be distributed in a matrix,

for example in the form of particles or dissolved, and by the absorption of harmful substances or harmful

Mixtures of substances cause the substance or the

Mixture of the matrix additionally oxygen-repellent and / or moisture-repellent properties has.

A getter may in various embodiments as Sto f, for example, have an oxidizable substance or be formed from it. For example, an oxidizable substance can react with oxygen and / or water and thereby bind these substances. Therefore, getters may, for example, have or be formed from easily oxidizing substances from the chemical group of the alkali metal and / or alkaline earth metals, for example magnesium, calcium, barium, cesium, cobalt, yttrium, lanthanum and / or rare earth metals.

Furthermore, other metals may be suitable,

For example, aluminum, zirconium, tantalum, copper, silver and / or titanium or oxidizable non-metallic substances.

In addition, a getter can also use CaO, BaO and MgO

have or be formed from it. However, a getter can also have a desiccant or be formed from it. For example, a desiccant can irreversibly absorb water without changing the volume or water PhysiSorption bind without significantly changing their volume.

By supplying heat, for example by means of a temperature increase, the adsorbed

 Water molecules are removed again. A getter may include, for example, dried silica gels or zeolites, or may be formed therefrom in various embodiments. A getter comprising or formed from a zeolite can adsorb oxygen and / or water in the pores and channels of the zeolite. In the adsorption of water and / or oxygen by means of dried silica gels and / or zeolites no harmful substances or mixtures can be formed for the underlying layers.

Furthermore, the getters of dried silica gels and / or zeolite can not change the volume by means of the reaction with water and / or oxygen.

The getter particles may in various embodiments have a mean diameter less than about 50 microns, for example, less than about 1 micron. The middle one

The diameter of the getter particles should not be greater than the thickness of the getter layer, for example in order not to damage the adjacent layers and the component.

The getter particles may in various embodiments, for example, a maximum mean diameter

which corresponds to about 20% of the thickness of the getter layer.

Getter particles having an average diameter smaller than about 1 μπι, for example in a range of about 50 nm to about 500 nm, can have the advantage of iron, that even with a dense packing of the getter particles

punctual forces are reduced to, for example, an OLED. In various embodiments, the first

Support structure 122, the cover 124 with the electrically functional structure 130, 150 conclusive Connect,

for example, cohesive.

In one embodiment, the first support structure 122 / or the second support structure 128 may be hermetically sealed with respect to water and / or oxygen. In various embodiments, the gettering

Layer be set up so that the getter layer has a refractive index that is smaller than that

Refractive index of the cover 124. Such a getter layer may, for example, a low-refractive adhesive, for example an acrylate having a

 Refractive index of about 1.3. In a

For example, the getter layer may include a high refractive index adhesive having, for example, high refractive non-diffusing particles and a mean refractive index approximately equal to the average refractive index of the organic functional layer structure, for example, in a range of about 1.7 to about 2, 0 or greater. Furthermore, several different adhesives may be provided in the getter layer, which form an adhesive layer sequence.

A first support structure 122 on or above the electrical busbar 118 may cause possible

Particle contamination (see Figure 8) between the electrically active structure 130 and the cover 124 are pressed into the electrical insulation 120. The electrical insulation 120 can thus be used as an additional threshold against

Short circuits act. Forming the first support structure 122, for example of a liquid metal,

for example, a GaInSn alloy; the electric

Insulation 120 and / or electrical busbar 118 may be formed by one of the methods used to form contact pads 112, 114 and / or the second Stü zstrukturen 128 is used, for example, a

To Print. This allows structure widths for the first

Support structure 122, the electrical insulation 120 and / or the electric bus 118 are realized in a range of about 1 μτα to about 100 μτ. The structure width for a first support structure from a

Adhesive may be greater than 100 μιτι process-related.

In various embodiments, the first

Support structure 122 and / or the second support structure 128 have one of the following shapes or be formed: point-like, linear, cylindrical, cuboid, pyramidal and / or circular. 2a, b shows schematic cross-sectional views

Optoelectronic components in the process for producing an optoelectronic component, according to various embodiments. 2a shows different schematic cross-sectional view of an optoelectronic component according to various exemplary embodiments in a method for producing an optoelectronic component. In a specific embodiment 200 for producing an optoelectronic component 250, a

electrically functional structure 130 in a substrate line 200a and parallel thereto, a cover 124 in one

Laminierlinie 200b formed.

After forming the electrically functional structure 130 with barrier film 116 on or over the electrodes 104, 108 and the organic functional layer structure 116, the barrier film 116 of the patterned substrate covers a large area without being laterally structured.

In one embodiment, over the electrically functional structure 130 on the barrier film 116 a second metal layer 202 may be formed - represented by reference numeral 210.

In various embodiments, the second

Metal layer 202 also be understood as a second functional support structure layer 202, for example, when the

Support structure 122, 128 is formed of a non-metallic material, for example, when the support structure 122, 128 is formed by means of a glass or plastic,

for example, a glass solder or an adhesive.

In one embodiment, forming the second metal layer 202 may include metal alloying or metallization on the electrically functional structure 130, such as depositing Al, Zn, Cr, Sn, Mo, Au, Ag, and / or Ni to form support structures. The application of the metal alloy 210 or metallization 210 may

structured (shown) or unstructured done, that is, the second metal layer 202 may be structured or formed and unstructured. The deposited second metal layer 202 may have a thickness in a range of 20 nm to 25 μm. In various embodiments, forming the second metal layer 202 may include

Forming multiple sub-layers in a layer sequence. The geometric edge of the electrically active

 Region 136 may be formed or processed such that it is free of metal layer. This allows further alloying after lamination of the

 Encapsulation structure can be prevented (see description Fig.5).

In a further method step, a cover 124 is provided. This cover 124 may be, for example, a cleaned laminating glass or a film hermetically sealed with protective layers.

On the cover 124 may optionally be an adhesive layer 204 or non-stick layer 204 are formed - represented by Reference numeral 220, for example, for a structured or structured application of a first metal layer 206 - shown by reference numeral 230. The first

Metal layer 206 may include, for example, a metal or metal alloy that is liquid at room temperature. The second metal layer 206 may be formed, for example, by means of printing, dispensing and / or by means of a solution. In various embodiments, the first

 Metal layer 206 are also understood as the first functional support structure layer 206, for example, when the

Support structure 122, 128 is formed of a non-metallic material, for example, when the support structure 122, 128 is formed by means of a glass or plastic,

for example, a glass solder or an adhesive.

In one embodiment, by means of the adhesion layer 204 or anti-adhesion layer 204, a first metal layer 206 may be provided on the edge of the cover 124 with or without a surface application

be formed, for example, only on the edge or in the whole area. In one embodiment, the

Non-stick layer 204 or adhesive layer 204 may be formed such that a first metal layer 206 at the edge of

Cover 124, for example, geometrically formed further out than the geometric edge of the counterpart 210 (the second metal layer 202 substrate); and / or over the electrical busbar. The second metal layer 206 may be in a

 Embodiments liquid on the cover 124,

For example, be applied to a laminating glass, wherein the second metal layer 206, the cover 124 depending on the pad (adhesive layer 204 / anti-adhesive layer 204) wetted or not. In other words, by means of the adhesion layer 204 or anti-tcoat layer 204, a structuring of the first

Metal layer 206 can be realized. As an adhesive layer 204 / an anti-adhesion layer 204, for example, a layer comprising one or more of the following: TiOx, GaOx, WOx, ZrOx, AlOx; optionally on the cover 124

be formed. In a further method step 240, the first

 Metal layer 206 on the cover 124 brought into physical contact with the electrically functional structure 130 with the second metal layer 202. In other words, the cover 124 with the first metal layer 206 is laminated onto the electrically functional structure 130 with the second metal layer 202. In one embodiment, the first metal layer 206 and the second metal layer 202 are materially configured such that they begin to alloy upon formation of physical contact with each other.

For example, in that the second metal layer 202 comprises aluminum and the first metal layer 206 comprises a eutectic GaInSn alloy. The first metal layer 206 and the second metal layer 202 alloy with each other and

solidify themselves until there is no more local aluminum in physical contact with the GalnSn alloy. This is a selective solidification of the second

Metal layer 206 possible. The first metal layer 206 remains liquid at the points where it has not reacted with aluminum, and can thus have an increased compression modulus, for example having an increased particle resistance - shown in Fig.2b. The alloyed ones

Support structure 122, 128 may reduce the compressive stress on softer intermediate regions, such as organic functional layer structure 106. In the geometric

Edge region of the electrically active region can

Reaction stops, for example, a vacuum point, further reacting the first metal layer 206 with the second metal layer 202 avoid. By using a first metal layer 206 of a low-melting first metal alloy in cooperation with a second metal layer 202 of further second alloy elements, metal support structures 122, 128 as a new alloy for example on one

Thin-film encapsulation 116 may be formed. The maximum melting temperature of the first metal alloy should be below the maximum specification temperature of the electrical

functional structure, for example at most about 80 ° C. This does not damage organic functional layer structure 106 during encapsulation. A metallic one

Support structure 122, 128 should be above the

 Specification temperature to be dimensionally stable, i. do not liquefy during storage or during operation of the optoelectronic component. A metallic support structure with such material may be formed by forming the first metal layer 206 or the second metal layer 202 from a eutectic substance or a eutectic substance mixture. When forming the metal layer of the eutectic substance or eutectic substance mixture, the eutectic substance or the eutectic substance mixture is at the phase equilibrium (eutectic). The complementary

Metal layer is formed in this embodiment of a substance or substance that shifts the eutectic substance or the eutectic Stoffgernisch by chemical reaction from the eutectic. In one embodiment, the eutectic substance or eutectic substance may exist in possible intermediate regions 126 between the

Support structures 122, for example, in cavities 126, are still in phase equilibrium, for example, be elastic or viscoelastic. As a result, the eutectic substance or the eutectic substance mixture can act as additional particle protection in the cavities 126 (see FIG.

In one embodiment, the eutectic or eutectic may, for example, include or be formed from a GaInSn alloy and the complementary metal may be aluminum or tin.

In one embodiment, the eutectic or eutectic material may include 68% by weight of Ga,

22 wt.% In and 10 wt.% Sn. Such a GalnSn alloy can have a melting temperature of -19.5 ° C. have and wetted glass, ie is thus processable at room temperature. By means of the Sn content of the alloy, the melting point of the GaInSn alloy can be adjusted, for example, a GaInSn alloy having 62 wt.% Ga, 22 wt. % In and 16 wt. % Sn has a melting temperature of 10.7 ° C. In other words, by means of the Sn content, the melting point of a GaInSn alloy can be adjusted to a process-suitable value.

In one embodiment, the eutectic or eutectic composition may comprise a Field metal or a Field metal alloy, for example, 51 wt. % In, 33% by weight Bi and 16% by weight -% Sn. Such an InBiSn alloy can have a melting temperature of 62 ° C.

and wets glass, i. is thus on one

Hot plate processable.

In one embodiment, the first one may

functional support structure layer 206 and / or the second functional support structure layer 202 have an adjustable melting point, for example by means of a substance concentration of the substance or mixture of the first functional support structure layer 206 and / or the second functional support structure layer 202.

In one embodiment, the fabric or blend of first functional support structure layer 206 and / or second functional support structure layer 202 may wet a glass substrate, i. a contact angle in a range of 0 ° to about 120 °, for example in a range 0 ° to about 90 °, for example in a range of about 0 ° to about 60 °. 3a, b shows schematic cross-sectional views

Optoelectronic components in the process for producing an optoelectronic component, according to various embodiments. 3a shows various schematic cross-sectional view of an optoelectronic component according to various

 Embodiments in a method for producing an optoelectronic component.

In a specific embodiment 300 for producing an optoelectronic component 350, a

electrically functional structure 130 in a substrate line 300a and parallel thereto, a cover 124 in one

Laminierlinie 300b formed.

After forming the electrically functional structure 130 with barrier film 116 on or over the electrodes 104, 108 and the organic functional layer structure 116, the barrier film 116 of the patterned substrate covers a large area without being laterally structured.

In one embodiment, over the electrical

functional structure 130 may be formed on the barrier thin film 116, an anti-adhesion layer 204 / adhesive layer 204 - represented by reference numeral 310.

The non-stick layer 20 / adhesive layer 204 may be laterally structured, for example. On the adhesion layer 204, in one embodiment, the first metal layer 206

be formed - represented by the reference numeral

340. In one embodiment, by means of the adhesive layer 204 or anti-adhesion layer 204, a first metal layer 206 may be provided on the edge of the cover 124 with or without a surface application

be formed, for example, only on the edge or in the whole area. In one embodiment, the

Non-stick layer 204 or adhesive layer 204 may be formed such that a first metal layer 206 at the edge of

Cover 124, for example, geometrically formed further out than the geometric edge of the counterpart 210 (the second metal layer 202 substrate); and / or over the electrical busbar.

The first metal layer 206 may comprise, for example, a metal or a metal alloy that is liquid at room temperature. The second metal layer 206 can be formed, for example, by means of printing, dispensing, knife coating and / or by means of a solution. In a further method step, a cover 124 is provided. This cover 124 may be, for example, a cleaned laminating glass, a film hermetically sealed with protective layers and / or a metal foil. The

Cover, for example, be laterally structured, for example in the region of the support structures 122, 128 or to be formed, for example, to form a cavity.

On the cover 124, a second metal layer 202 of a metal alloy or metallization can be formed - represented by reference numeral 320. Die

Metal alloy or metallization may, for example, be configured as a deposition of Al, Zn, Cr, Sn and / or Ni, for example structured (shown) or

unstructured (not shown).

The deposited second metal layer 202 may have a thickness in a range of 20 nm to 25 μτα. In various embodiments, forming the second

Metal layer 202 comprise forming a plurality of sub-layers in a layer sequence. The geometric edge of the electrically active region 136 may be formed or processed such that it is free of metal layer. As a result, further alloying after lamination of the encapsulation structure can be prevented (see

Description Fig. 5). The second metal layer 206 may be in a

Embodiments liquid on the cover 124,

For example, be applied to a laminating glass, wherein the second metal layer 206, the cover 124 depending on the pad (adhesive layer 204 / anti-adhesive layer 204) wetted or not. In other words, by means of the adhesion layer 204 or non-adhesive layer 204, a structuring of the first

Metal layer 206 can be realized. As an adhesive layer 204 / an anti-adhesion layer 204, for example, a layer comprising one or more of the following materials: TiOx, GaOx, Ox, ZrOx, AlOx; optionally on the cover 124

be formed.

In a further method step 340, the second

Metal layer 202 on the cover 124 brought into physical contact with the electrically functional structure 130 with the first metal layer 206. In other words, the cover 124 with the second metal layer 202 is laminated onto the electrically functional structure 130 with the first metal layer 206. In one embodiment, the first metal layer 206 and the second metal layer 202 are fabricated such that they begin to alloy upon formation of physical contact with each other.

For example, in that the second metal layer 202 comprises aluminum and the first metal layer 206 has a eutectic GaInSn alloy. The first metal layer 206 and the second metal layer 202 alloy with each other and

solidify themselves until there is no more local aluminum in physical contact with the GalnSn alloy. This is a selective solidification of the second

 Metal layer 206 possible. The first metal layer 206 remains liquid at the points where it has not reacted with aluminum, and as a result can have an increased compression modulus, for example an increased particle resistance on iron - shown in FIG. 3b. The alloyed ones

 Support structures 122, 128 can compress the pressure

softer intermediate regions, for example the organic functional layer structure 106. in the geometric edge region of the electrically active region can avoid reaction stops, such as a vacuum point, further reacting the first metal layer 206 with the second metal layer 202.

FIGS. 4a-d show schematic cross-sectional views

optoelectronic components, according to different

 Exemplary embodiments. A first support structure 122 over an electrical

 Busbar 118 and a second support structure 128 in

Edge region of the electrically active region 136 (shown in FIGS. 1-3) may be before and / or after the formation of the

Support structures 122, 128 large-area liquid

Have metal layers and / or adhesive layers. These liquid layers may continue to react con ciently and / or vary continuously. Thereby, the edge region 402 of a support structure 122, 128 of a

be exposed to continuous change (shown in Figure 4a). The edge of the support structures 122, 128 may in various embodiments by means of a

Protective layer, an adhesive layer and / or a

Non-stick layer (shown in Fig.4b-d) before such

Changes are protected.

4b shows two adjacent support structures 122, 128 in which a non-reactive structure 404 is formed next to the support structures 122, 128, for example of a chemically non-reactive material, for example Ni for GaInSn.

4c shows two adjacent support structures 122, 128 in which, in addition to the support structures 122, 128, an anti-adhesion layer 406 is formed, for example of a non-wetting substance or substance mixture with regard to the substance or substance mixture of the support structures 122, 128. In the case of a support structure 122, 128, which has Ga, In and / or Sn, for example, directly on the lamination glass 124 a Antihaf layer 406 comprising GaO _x, AlO _x, TiO _x, ZrO _x

and / or ZnO _x , while the substrate of the liquid metal alloy comprises, for example, glass having, for example, good wetting for GaInSn.

FIG. 4 d shows two adjacent support structures 122, 128 in which cavity 126 is partially or completely filled with a substance or mixture of substances that a higher

Compression module than the substance or

For this purpose, between the support structures 122, 128 on the cover 124 at least partially a functional layer 206 may be formed, wherein the functional layer 206, the cover in the

At least partially wetted cavity. The functional layer 206 may have a thickness that is less than or equal to the thickness of the support structures 122, 128. In other words, the cavity 126 or the functional layer cavity 126 may have a lower hardness than the thickness

Support structure 122, 128. As a result, can be formed between cover 124 and electrically functional structure 130, 150, a spring travel, the mechanical loads (see Fig. 8) can reduce / cushion.

5a-c shows schematic cross-sectional views

optoelectronic components, according to different

Embodiments.

 In various embodiments, a

Support structure 122, 128 may be configured as a material connection of a cover with an electrically functional structure.

When forming the cohesive connection, the

Reaction time of the support structure 122, 128 with the cover and / or the electrically functional structure to be slow in terms of a desired application. In various embodiments, at least one functional support structure layer 202, 206 for forming a support structure 122, 128 may have a structuring,

For example, have a structured surface or a structured shape or be formed (shown in Fig. 5a-c). As a result, the surface-to-volume ratio of the functional support structure layer can be increased and thereby the reaction time of the

functional support structure layer 202, 206 with the cover 124 of the electrically functional structure 130 and / or a second functional support structure layer 202, 206 can be shortened.

5a shows a thin functional support structure layer 202, 206 between the cover 124 and the electrical

functional structure 130. A thin functional

Supporting structural layer 202, 206 may react rapidly with functional support structure layer 202, 206

allow, for example, if the thin functional

Support structure layer 202, 206 is formed from a very reactive substance or mixture of substances with respect to the substance or the substance mixture of the cover 124, the surface of the electrically active structure 130, 150 and / or a

complementary second functional support structure layer 206. A reactive substance or a reactive substance mixture can be understood to be reactive, i. chemically active.

For example, a thin functional support structure layer 202, 206 may be a thin metal layer, a thin metal layer

Metal alloy, a thin glass layer, a thin ceramic layer, a thin plastic layer or a thin one

Be adhesive layer.

For example, a thin functional support structure layer 202, 206 may have a thickness in a range of about 30 nm to about 100 μπι, for example, in one

Range from about 50 nm to about 50 μτ, for example, in a range from about 100 nm to about 10 μτη, for example, in a range of about 250 nm to about 5 μνα, for example, in a range of about 500 nm to about 1 μπ. In one embodiment, the first is functional

 Support structure layer 206 formed as a thin aluminum layer, while the second functional

 Support structure layer 202 is formed as a GaInSn layer.

Fig.5b shows a powdered functional

 Support structure layer 202, 206 between the cover 124 and the electrically functional structure 130. A powdered functional support structure layer 202, 206 may be formed, for example, by powder coating one or more substances of the functional support structure layer 202, 206, wherein the particles have an average diameter in one

Range from about 30 nm to about 100 μηα.

Fig. 5c shows a structured functional

 Support structure layer 202, 206 between the cover 124 and the electrically functional structure 130. In one embodiment, a first functional support structure layer 206 may be geometrically and / or chemically complementary to a second functional structure

Support structure layer 202 may be formed, wherein these functional support structure layer 202, 206, a support structure 122, 128 form.

In one embodiment, a structured

functional support structure layer 202, 206 have a lamellar shape.

6a, b show schematic cross-sectional views of a conventional optoelectronic component. An organic optoelectronic device (shown in FIG. 6), for example an OLED, may have an anode 604 and a cathode 608 with an organic functional

Layer system 606 between them. The organic functional layer system 606 may be one or more

 Emitterschient / s (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not

in each case two or more charge generating layers (CGL) for charge carrier pair generation, as well as one or more

Electron block layers (not shown), too

referred to as hole transport layer (s) ("hole transport layer" HTL), and one or more hole blockage layers (not shown), also referred to as

 Electron transporting layer ("electron transport layer" - ETL) to direct current flow

Organic-based devices, such as organic light emitting diodes (OLEDs), are finding widespread use in general lighting, for example as surface light sources. An organic optoelectronic device conventionally comprises: a first electrode 60 formed on or above a carrier 602. On or above the first electrode 604 is an organic functional layer structure 606

educated . Above or on the organic functional layer structure 606 is a second electrode 608

educated . The second electrode 608 is electrically insulated from the first electrode 604 by means of electrical insulation 610. The electrical insulations 610 are configured such that current flow between the first electrode 604 and the second electrode 608 is prevented. The second electrode 608 is physically and electrically connected to a second contact pad 614 and the first electrode 604 is physically and electrically connected to a first contact pad 612. 7a, b show schematic cross-sectional views of a conventional optoelectronic component.

Fig. 7a shows a conventional method for encapsulating an optoelectronic device 600. On the second

 Electrode 608 of an optoelectronic component 600

(see Fig. 6), a barrier thin film 700 is formed such that the second electrode 608, the electrical

Isolations 610 and the organic functional

Layer structure 606 is surrounded by the barrier film 616. Furthermore, an adhesive layer 706 is applied to a cover 704. The cover 704 is, for example, a laminating glass 704 or a film 704, and the adhesive is an epoxy adhesive. The cover 704 with adhesive layer 706 is then applied to the barrier film 702 (shown in Fig. 7a). Thereby, an encapsulated optoelectronic device 600 with a conventional encapsulation structure 706 with

Barrier thin film 700 and laminated cover 702 formed.

FIG. 7 b shows a conventional method for encapsulating an optoelectronic component 600. A moisture-binding getter 710 is applied to a cover 704 and a lateral adhesive layer 708 is applied in the edge region of the cover 702. The cover 704 with lateral

Adhesive layer 708 and getter 710 is then applied to the

optoelectronic component 600, for example, applied to the contact pads 612, 614 (shown in Figure 7b). As a result, a cavity glass encapsulation 712 is conventionally formed.

8a, b show schematic cross-sectional views of a conventional optoelectronic component.

When a pressure 804 or curvature 806 acts on a cover 704 of a conventional encapsulant, such as a protective glass or a lamination glass; can a Particulate contamination 802 in the organic functional

Layers of the OLED are pressed. This can become one

Short circuit and / or create latent heat points. Heat spots could result in spontaneous failure as a late consequence. Mechanically flexible components can be more susceptible to errors due to the possibility of bending

exhibit .

In various embodiments, a

Optoelectronic component and a method for

Producing an optoelectronic component

provided with which it is possible to increase the mechanical stability of encapsulated optoelectronic devices.

The encapsulation protective layers are no longer or less pressed onto the organic functional layers, whereby an increased particle resistance is achieved.

The process temperature for producing the encapsulation is lower than the degradation temperature of the organic

Substances, for example, a maximum of about 80 ° C, whereby the organic substances are spared.

The encapsulation according to various embodiments can be applied by various methods, for example vacuum evaporation, printing, spraying,

Laser structuring, doctoring or similar. For the

Support structures, the different melting points can be used technically advantageous in alloys,

for example, a reduced melting point, for example below 80 ° C. Furthermore, no further process steps with regard to the encapsulation are necessary, for example an ablation of the thin-film encapsulation. The support structures in conjunction with the thin-film encapsulation may be the

Risk of short circuit of the organic functional

 Reduce stratification system. Furthermore, in the

Alloys very soft materials can be used, making them suitable for substrates of different types of glass different expansion coefficients are used. The first component of the support structure, which is glass wetting, may have a preference in process control for full area patterning with a very low material requirement. The first component is cheaper than previously used adhesives and recyclable. Depending on the choice of the second component, for example, whether the second component is liquid or solid, for example, large areas can be wetted liquid. As a result, for example, a better particle resistance can be made possible. The

Material of the support structures is non-toxic and

insoluble in water, so that no contamination problems are foreseeable. Furthermore, due to the choice of materials of

Support structures, the support structures under ambient lu, for example, in a clean room, are formed. In an encapsulation by means of lamination in a vacuum

is formed, additional measures to reduce the particle sensitivity are optional, for example, an introduction of filler in cavities. Furthermore, a reduction of particle contamination by means of a

 Forming the support structures for transparent components with reduced pressure / voltage applied to bending points. Furthermore, interference fringes that occur at different adhesive thicknesses over the optically active surface, with appropriate encapsulation without

 Thin-film encapsulation is possible. This can continue to save costs.

Claims

Optoelectronic component (140, 160, 250, 350) comprising:  • an electrically active region (136) having an optically active region {132} and a  optically inactive region (134);  Wherein the electrically active region (136) comprises a first electrode (104) and a second electrode (108);  Wherein the electrically active region (136) comprises at least one electrical bus bar (118) formed in the optically active region (132);  • wherein the electrical busbar (118) is disposed between the first electrode (104) and the second electrode (108);  • an encapsulation structure on or above the  electrically active region (136);  Wherein the encapsulation structure has a support structure (122) on or above the electrical busbar (118) in the optically active region (132) • wherein the support structure (122) over the  electric busbar (118) is arranged such that the busbar (118) completely laterally covers the support structure (122) or the support structure (122) the busbar (118). Optoelectronic component (140, 160, 250, 350) according to claim 1, wherein the optoelectronic component (140, 160, 250, 350) is designed as an organic light emitting diode (140, 140). 160, 250, 350) is formed. Optoelectronic component (140, 160, 250, 350) according to one of claims 1 or 2, wherein the electrically active region (136) is a electrically functional structure (130, 150) wherein the electrically functional structure is an organic functional layer structure  (106) between a first electrode (104) and  a second electrode (108). The optoelectronic device (140, 160, 250, 350) of any one of claims 1 to 3, further comprising:  a first electrical busbar (118) and  at least one second electrical busbar. 5, optoelectronic component (140, 160, 250, 350) according to one of claims 1 to 4,  wherein at least one support structure (122) has a  A substance or a mixture of substances, the /  hermetically sealed with respect to water and / or  Oxygen. 6. Optoelectronic component (140, 160, 250, 350) according to one of claims 1 to 5,  wherein the support structure (122) has a width similar to the width of the electrical  Busbar (118) is. 7. Method for producing an optoelectronic  Component comprising the method:  Forming an electrically active region (136) comprising an optically active region (132) and an optically inactive region (134);  Wherein the electrically active region (136) has a first electrode (104) and a second electrode (108);  Wherein the electrically active region (136) is formed to have at least one electrical busbar (118), the busbar (118) being formed in the optically active region (132); • wherein the electrical busbar (118) is disposed between the first electrode (104) and the second electrode (108); Forming an encapsulation structure on or over the electrically active region (136);  the encapsulation structure having a  Support structure (122) is formed on or above the electrical busbar (118) in the optically active region (132)  wherein the support structure (122) is disposed over the electrical bus bar (118) such that the bus bar (118) completely laterally covers the support structure (122) or support structure (122) of the bus bar (118). Method according to claim 7, wherein the optoelectronic component (140 250, 350) as an organic light emitting diode is trained. Method according to one of claims 7 or 8, wherein forming the electrically active region  (136) forming an electrically functional Structure (130, 150), wherein the electrically functional structure (130, 150) an organic functional layered structure (106) between a first electrode (104) and a second electrode  (108). Method according to claim 9, wherein the electrical busbar (118) is connected to the first electrode (10) or to the second Electrode (108) is formed electrically coupled. Method according to one of claims 7 to 10, wherein the support structure (122) as a second Busbar is formed.