WO2014090626A2 - Organic optoelectronic component device and method for producing an organic optoelectronic component device - Google Patents

Abstract

An organic optoelectronic component device (100, 110, 120, 130, 300) is provided in various embodiments, the organic optoelectronic component device (100, 110, 120, 130, 300) having: a carrier (202); an organic optoelectronic component (106) having a first electrode and a second electrode; and an overvoltage protection structure (108, 114, 610) having a first electrically conductive portion and a second electrically conductive portion. The organic optoelectronic component (106) and the overvoltage protection structure (108, 114, 610) are formed on or above the carrier (202). The overvoltage protection structure (108, 114, 610) and the organic optoelectronic component (106) have at least one common layer and the overvoltage protection structure (108, 114, 610) is electrically connected to the organic optoelectronic component (106). The first electrically conductive portion is a region of the first electrode and/or the second electrically conductive portion is a region of the second electrode, and the overvoltage protection structure (108, 114, 610) has a spark gap.

Description

Be ehung

Organic, optoelectronic device device and

 Process for producing an organic,

Optoelectronic Device Device In various embodiments, an organic, optoelectronic device device and a method for producing an organic, optoelectronic

Component device provided.

Organic-based optoelectronic components,

For example, an organic light-emitting diodes (organic light emitting diode - OLED) or an organic solar cell, find increasingly widespread application.

An OLED can have two electrodes, for example two

Contact metallizations configured as an anode and a cathode having an organic functional layer system therebetween. The organic functional

 Layer system may include one or more emitter layer (s) in which / which electromagnetic radiation

for example, one or more

Charge pair Generation layer structure consisting of two or more charge pair generation layers

 ("Charge generating layer", CGL)

Charge carrier pair generation, as well as one or more

Electron block layers, also referred to as

Hole transport layer (s) (HTL), and one or more hole blocker layers, also referred to as electron transport layer (s) ("ectron transport layer" - ETL), for directing current flow.

Organic light-emitting diodes are sensitive electronic components, which may only be connected poled in one direction. A reverse operation is not provided and can lead to a permanent failure of the OLED. As well Electrostatic discharges (electrostatic disCharge - ESD) can damage the OLED and / or cause permanent damage

Failure lead, the electrostatic discharge leads to a breakdown of the pn - transition with irreversible damage.

In a conventional method of protecting an organic light emitting diode from reverse operation, a protective diode having a sufficiently high reverse voltage is connected in series with the OLED in series. In reverse operation, this protection diode blocks a reverse current flow sufficiently and

This prevents reverse flow through the OLED.

In another conventional method of protecting an organic light emitting diode from reverse operation, the protection diode is externally reverse biased, i. antiparallel to the OLED, switched. If the OLED is contacted with reverse polarity, the protective diode conducts and short-circuits the voltage, the protective diode being designed for the current flowing through it and enduring this current permanently or the protective diode short-circuiting the polarity reversal voltage only for a short period of time and the connected operating device short circuiting (FIG. the current peak) detects and then shuts off. In a conventional method of protecting an organic

Light emitting diode before electrostatic discharges on the OLED a flexible printed circuit board (flex printed circuit board - flex-pcb) is applied, for example, bonded. On this circuit board, an SMD protection diode (surface mounted device - SMD) is connected in anti-parallel to the forward direction of the OLED. This external protection diode can reversibly absorb or destroy ESD pulses. Thus, an ESD pulse can always be passed through the forward-biased diode depending on its polarity, i. either the protective diode or the optoelectronic device, drain. Breakdown-type discharges at the reverse direction

switched OLED can be avoided in this way. In order to be able to process o electronic components, the processing has traditionally been carried out in an ESO-free environment, which involves high costs for the equipment of the

Production lines. The upgrade of

 Processing lines for producing an ESD-free environment is only possible in exceptional cases for cost reasons for processors of optoelectronic components. In various embodiments, an organic, optoelectronic component device and a method for producing an organic, optoelectronic

Device device provided with which it is possible to protect the organic, optoelectronic

Component before electrostatic discharge and / or

To realize reverse polarity, without an external

Surge protection structure.

In the context of this description, an organic substance, regardless of the respective state of matter, in chemically uniform form, by

Characteristic physical and chemical properties of the compound characterized carbon. Furthermore, in the context of this description, an inorganic substance may be one in a chemically uniform form, regardless of the particular state of matter

existing, characterized by characteristic physika1ische and chemical properties compound without carbon or simple carbon compound are understood. In the context of this description, an organic-inorganic substance (hybrid substance) can be a

irrespective of the particular state of aggregation, in chemically uniform form, characterized by characteristic physical and chemical properties, of compounds containing carbon and free of carbon. In the context of this description, the term "substance" is understood to mean all of the above substances, for example an organic substance, an inorganic substance, and / or a hybrid substance. Furthermore, in the context of this description, a mixture of substances may be understood as meaning components of two or more different substances whose

 For example, components are very finely divided. As a class of substance is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid

Understand substance (s) u. The term "material" can be used synonymously with the term "substance".

In the context of this description, a first substance or a first substance mixture may be equal to a second substance or a second substance mixture, if the chemical and

physical properties of the first substance or first substance mixture identical to the chemical and

physical properties of the second substance or of the second substance mixture.

In the context of this description, a first substance or a first substance mixture may be similar to a second substance or a second substance mixture if the first substance or the first substance mixture and the second substance or the second substance mixture

Mixture of an approximately equal stoichiometry

Composition, approximately the same chemical properties and / or approximately the same physical properties

has at least one size such as density, refractive index, chemical resistance or the like.

Thus, with respect to the stoichiometric composition, for example, crystalline SiC> 2 (quartz) as equal to amorphous S1O2 (silica glass) and can be considered as similar to SiO _x. However, with respect to the refractive index

crystalline SiO 2; be different to SiO _x or amorphous S1O2 · By adding additives, for example in the form of Dopants, for example, amorphous S1O2 may have the same or a similar refractive index as

crystalline S1O2, but then with respect to the chemical

Composition be different from crystalline S1O2.

The reference quantity in which a first substance resembles a second substance can be explicitly stated or can be derived from the

Context, for example, from the common

Properties of a group of substances or mixtures of substances.

An electrical contact can be used as an example

Integration of an organic, optoelectronic device are understood in an electrical circuit, wherein the circuit, for example by means of the electrical

Contacting the organic, optoelectronic

Component can be electrically closed.

A dimensionally stable substance can be added by adding

Plasticizers, for example solvents, or increasing the temperature become plastically moldable, i. be liquefied.

A plastically malleable substance can by means of a

Crosslinking reaction, removal of plasticizers and / or heat dimensionally stable, i. be solidified.

The solidification of a substance or mixture of substances, i. the transition of a material from malleable to dimensionally stable may include changing the viscosity, for example, increasing the viscosity from a first viscosity value to a second viscosity value. The second viscosity value may be many times greater than the first viscosity value, for example, i ranging from about 10 to about 10. The fabric may be formable at the first viscosity and dimensionally stable at the second viscosity.

The solidification of a substance or mixture of substances, ie the transition of a substance from malleable to dimensionally stable, can be Process or have a process in which low molecular weight components are removed from the substance or mixture, for example, solvent molecules or low molecular weight, intact components of the substance or the mixture, for example, a drying or

chemical crosslinking of the substance or of the substance mixture. The substance or the mixture of substances may, for example, in the moldable state have a higher concentration of low molecular weight substances in the entire substance or substance mixture than in

dimensionally stable condition.

However, a body of a dimensionally stable substance or mixture of substances may be malleable, for example when the body is arranged as a foil, for example one

Plastic film, a glass foil or a metal foil, such a body may for example be called mechanically flexible, since changes in the geometric shape of the body, for example a bending of a foil,

can be reversible. However, a mechanically flexible body, for example a film, can also be plastically moldable, for example by the mechanically flexible body being solidified after deformation, for example a

Deep drawing a plastic film. In the context of this description may be under an electronic

Component to be understood a component, which is the control, regulation or amplification of an electrical

Stromes concerns, for example by using

Semiconductor devices. An electronic component may, for example, a diode, a transistor, a

 Thermogenerator, an integrated circuits or a

Be a thyristor.

In various embodiments, a protection diode may be used as a suppressor diode (transient absorption zener diode).

TAZ diode or Transient Voltage Suppressor Diode - TVS diode) a Zener diode or a Schottky diode is formed be. A protection diode can also be used as an anti-kick back diode, a reverse bias diode, a flyback diode,

Rectifier diode or a snubbing diode. In various embodiments, a

Protective diode have a configuration of two or more of the diodes described above, for example in one

Series connection or parallel connection, for example in a unidirectional or bidirectional

Configuration. For example, in different

Embodiments, a protective diode, a suppressor diode in a unidirectional or a bidirectional

Configuration.

In various embodiments, the response time of a protection diode may be less than the response time of the protection diode

 Component which is to be protected by means of the protective diode. The response time can be understood as the time at which a semiconductor device blocks current flow when the voltage of the forward direction in the reverse direction with respect to the semiconductor component is reversed. The

 Response time can also be referred to as inhibit time, turn-on / off time, clamp time, or forward / reverse recovery time.

In the context of this description, an overvoltage protection structure can absorb and / or short-circuit high voltages, for example electrostatic discharges ESD, voltage bursts or surge pulses.

In the context of this description can under a

Optoelectronic component an embodiment of a

electronic component can be understood, wherein the optoelectronic component has an optically active region. The optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.

In the context of this description can be an organic

Optoelectronic component in various

Embodiments, for example as an organic

Light emitting diode (organic light emitting diode - OLSD), an organic photovoltaic system, for example an organic solar cell; in the organic functional layer system comprise or be formed from an organic substance or an organic substance mixture which, for example, for providing an electromagnetic radiation from a supplied electric current or to

Provide an electric current from a

furnished electromagnetic radiation

An electromagnetic radiation emitting device may in various embodiments

be electromagnetic radiation emitting semiconductor device and / or as an electromagnetic

Radiation emitting diode, as an organic

electromagnetic radiation emitting diode, as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation

be formed emitting transistor. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the

electromagnetic radiation emitting device

For example, as a light emitting diode (light emitting diode, LED) as an organic light emitting diode (organic light emitting diode, OLED), as light emitting

Transistor or emitting as organic light

Transistor be formed. The light-emitting

Component may be part of an integrated circuit in various embodiments. Furthermore, a

Provided a plurality of light emitting devices be, for example, housed in a common

Casing .

In the context of this description, emitting electromagnetic radiation can emit

Electromagnetic radiation verses.

In the context of this description, absorbing electromagnetic radiation may include absorbing

electromagnetic radiation.

In the context of this description, under an optically active region of an optoelectronic component, the

Area of an optoelectronic component can be understood, which can absorb electromagnetic radiation and form a photocurrent from it or by means of an applied voltage to the optically active region

can emit electromagnetic radiation. An optoelectronic component which has two flat, optically active sides, for example

be formed transparent, for example as a

transparent organic light emitting diode. However, the optically active region can also have a planar, optically active side and a planar, optically inactive side, for example an organic light-emitting diode, which is designed as a top emitter or bottom emitter. In various embodiments, an organic, optoelectronic component device is provided, the organic, optoelectronic component device

comprising: a carrier; an organic, optoelectronic device; and a surge protection structure; wherein the organic, optoelectronic component and the

 Surge protection structure on or above the carrier

are trained; the surge protection structure and the organic optoelectronic component has at least one common layer; and where the

 Overvoltage protection structure is electrically connected to the organic, optoelectronic device.

In various embodiments, an organic optoelectronic device device is provided, the organic optoelectronic device device

comprising; a carrier; an organic optoelectronic device comprising a first electrode and a two electrode; and an overvoltage protection structure comprising a first electrically conductive portion and a second electrically conductive portion; the

organic, optoelectronic device and the

Surge protection structure on or above the carrier

are trained; wherein the overvoltage protection structure and the organic, optoelectronic component have at least one common layer, wherein the overvoltage protection structure is electrically connected to the organic, optoelectronic component; the first being electrical

conductive portion is a portion of the first electrode and / or the second electrically conductive portion a

Area of the second electrode is; and where the

Overvoltage protection structure has a spark gap.

In one embodiment, the organic, optoelectronic component as an organic light-emitting diode or a

be formed organic solar cell. In one embodiment, the overvoltage protection structure may be formed electrically in series with the organic, optoelectronic component.

In one embodiment, the overvoltage protection structure may be formed as a protective diode, wherein the protective diode in the forward direction to the Durchliehtiehtung of

organic, optoelectronic component is formed. In other words, the serial to the organic,

Protective diode may have a forward direction, which corresponds to the forward direction of the organic, optoelectronic component.

In one embodiment, the protection diode may be such

be formed such that the breakdown voltage of the protective diode in the reverse direction is greater than a voltage pulse occurring on the orgasmic, optoelectronic component device in the reverse direction of the organic optoelectronic component.

In one embodiment, the organic, optoelectronic component may have a first electrode and a second electrode, and the overvoltage protection structure may have a first electrically conductive section and a second electrically conductive section, wherein at least one

electrically conductive portion of the overvoltage protection structure with an organic,

Optoelectronic component is electrically coupled.

In one embodiment, the overvoltage protection structure can be formed electrically parallel to the organic, optoelectronic component.

In one embodiment, the organic, optoelectronic

Component having a first electrode and a second electrode, and the overvoltage protection structure has a first electrically conductive portion, which is connected to the first

Electrode is electrically coupled and a second

electrically conductive gate which is electrically coupled to the two electrodes.

In one embodiment, the first electrically conductive portion may comprise a different material than the second electrically conductive portion and / or the first electrode and / or the second electrode. In one embodiment, the first electrically conductive portion may be a region of the first electrode and / or the second electrically conductive portion may be a region of the second electrode.

In one embodiment, the organic, optoelectronic component device may have a first ontaktpad and a second contact pad, wherein the contact pads for electrically contacting the organic, optoelectronic

 Component device are arranged and wherein the first electrically conductive portion and / or the first electrode as at least a portion of the first contact pad

are set up / is and / or wherein the second electrically conductive portion and / or the second electrode is / are arranged as at least a portion of the second contact pad.

In one embodiment, the electrically conductive portions may be an overlapping arrangement, i. mutually staggered arrangement and / or shifted arrangement to each other, wherein parts of the electrically conductive portions may be parallel to each other, for example, at a distance from each other. The electrically conductive sections can also be at different levels, in the sense of

different layers in a cross-sectional view or plane, be formed, for example, similar to a cross. In one embodiment, the electrically conductive sections may have a complementary shape and / or arrangement with each other, wherein the first electrically conductive section may be partially and / or completely perpendicular and / or parallel to the second electrically conductive section. In one embodiment, a parallel arrangement of the electrically conductive sections, for example, as a partially and / or completely concentric arrangement and / or coaxial arrangement of the electrically conductive

Be formed sections. The second electrically conductive portion can, for example, the inner electrically

forming a conductive region of a concentric arrangement of electrically conductive sections, wherein the

Interior of the second electrically conductive section

for example, may be hollow or, for example, a

may comprise electrically insulating material, or

for example, the same, a similar or different electrically conductive material as or as the first electrically conductive portion.

The electrically conductive sections may for example have a planar shape, or a tapered shape

exhibit. For example, a surface of electrically conductive portions may be similar to a pin or may be formed similarly to a planar plane.

 For example, electrically conductive portions having planar shapes may be similar to a pin or pin, or similar to a planar plane. Electrically conductive portions mi of a tapered shape may be formed, for example, similar to a tip or similar to a rounding.

In one embodiment, the overvoltage protection structure may be formed as a varistor, wherein the varistor is formed electrically parallel to the organic optoelectronic component.

In one embodiment, the varistor on one of the

Surfaces of the organic, optoelectronic component may be formed. In one embodiment, the varistor may be partially or completely filled with layers of the organic,

be formed optoelectronic component. This type of embodiment can also be understood as forming a varistor in the interior of the organic, optoelectronic component.

In one embodiment, the varistor in the interior of the organic, optoelectronic component with respect to further layers of the organic, optoelectronic

Component be electrically isolated.

In a Ausges planning the surge Schu z structure may be formed as a protective diode, wherein the protective diode is formed electrically parallel to the organic optoelectronic device.

In one embodiment, the protection diode may be such

be formed such that the operating voltage of the protective diode in the reverse direction of the organic, optoelectronic

 Element is smaller than the breakdown voltage of the organic, optoelectronic device in the reverse direction, for example, with respect to a voltage pulse occurring at the organic optoelectronic device in

Reverse direction.

In one embodiment, the overvoltage protection structure may be formed as a spark gap, wherein the

Spark gap electrically parallel to the organic

optoelectronic component is formed.

In one embodiment, the common layer

 be structured, for example, the overvoltage protection

Structure at least partially, for example, the first electrically conductive portion and the second electrically conductive portion of the layer of the the electrodes of the organic, optoelectronic

Form component.

In one embodiment, the common layer may comprise at least one electrode of the organic, optoelectronic

 Have component and at least one electrically lei-capable section of the overvoltage protection structure or be electrically connected thereto. In one embodiment, the overvoltage protection structure in addition to the organic, optoelectronic component

be educated.

In one embodiment, the overvoltage protection structure may be under or on the organic,

be formed optoelectronic component.

In one embodiment, the overvoltage protection structure may be implemented as a structured region of the organic,

be formed optoelectronic component,

For example, a spark gap, a varistor or a protective diode, i. a region without optically active layers, for example without emitter layers. In one embodiment, the organic, optoelectronic component device may have an optically active region and an optically inactive region, wherein the

Overvoltage protection structure is formed in the optically inactive region.

In one embodiment, the overvoltage protection structure in the geomet ischen andbereich of the organic,

be formed optoelectronic component,

for example, in the edge area in the. Interior of the organic, optoelectronic device or on or above the organic, optoelectronic device. In one embodiment, the overvoltage protection structure on a surface of the organic, optoelectronic

Component exposed or from an electrical

insulating layer or an electrically conductive

Be surrounded by layer.

In one embodiment, at least a part of the

Overshield protection structure may be formed on the first contact pad and / or the second contact pad,

for example as a varistor bridge.

In various embodiments, the

 Overvoltage protection structure having a configuration of one or more spark gap / s, protection diode (s) and / or varistor (s), which may be electrically connected in series or in parallel to each other.

In one embodiment, an overvoltage protection structure may comprise at least two protective diodes which are formed electrically parallel or in series with each other, wherein the overvoltage protection structure is formed electrically parallel or in series with the organic optoelectronic component. In one embodiment, an overvoltage protection structure can have, electrically parallel to the organic optoelectronic component, at least two protective diodes which are connected in series with one another and whose forward direction is opposite. The protection diodes may for example be designed such that they have an amount of

 Response voltage of about 0, 6 V and, for example, an amount of the breakdown voltage in a range of about 4 V to about 15 V have. The amount of

Breakdown voltage may be dependent on the design of the organic optoelectronic component and

For example, have a value in a range of about 4 V to about 1000 V. In various embodiments, a protection diode may have a configuration of two or more pn junctions, ie, diodes, for example, in series or

Parallel connection, for example in a unidirectional or bidirectional configuration.

In one embodiment, a protection diode a

Suppressor diode in a unidirectional or a

bidirectional configuration.

The protective diode described below can be found in

different configurations may be formed electrically parallel or in series with the organic optoelectronic device.

 In one embodiment, the organic, optoelectronic

Device device be designed such that the response time of the protection diode is smaller than the response time of the organic, optoelectronic component.

In one embodiment, the protection diode may comprise at least one hole-conducting layer and at least one electron-conducting layer, wherein the at least one hole-conducting layer has physical contact with the at least one e1ekLronleitenden layer; and wherein at least one hole-conducting layer is electrically connected to the first

conductive portion is electrically connected, and wherein at least one electron-conducting layer is electrically connected to the second electrically conductive portion. At a common interface of the at least one

Electron-conducting layer with the at least one

hole-conducting layer pairs of charge carriers can be generated. In one embodiment, at least one

Electron conductive layer have a layer thickness in a range of about 1 nm to about 500 nm. In one embodiment, at least one hole-conducting layer may have a layer thickness in a range from about 1 nm to about 500 nm.

In one embodiment, the substance or mixture of at least one electron-conducting layer and / or the loc-conducting layer can have a transmission greater than approximately

90% in a wavelength range of about 450 nm to about 650 nm.

In one embodiment, the substance or the substance mixture of a hole-conducting layer may have a valence band approximately equal to the conduction band of the substance or of the substance mixture of the electron-conducting layer, with which the

hole-conducting layer is in physical contact.

In one embodiment, the at least one can

Electron-conducting layer and / or the at least one hole-conducting layer have a mixture of a matrix and a dopant or be formed therefrom.

In one embodiment, the at least one hole-conducting layer can have or be formed from an intrinsically hole-conducting substance.

In one embodiment, the at least one hole-end layer may include or be formed from one of the following intrinsically hole-conducting substances: a PD, HAT-CN, Cu (I) FBz, MoO _x , W0 _X , V0 _X , ReO _x , F4- TCNQ, DP-2, NDP-9, Bi (III) pFBz, FloCuPc.

In one embodiment, the at least one hole-conducting layer can be formed from a mixture of matrix and p-type dopant. In one embodiment, the matrix of the at least one hole-conducting layer may have one of the following: substances or be formed from them:

• HAT-CN, Cu (I) pFBz, MoO _x, W0 _X, V0 _X, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) FBZ, FlöCuPc, HTM014: Cu {II) FBZ .

C (NPD: MoQ _x, PEDOT: PSS, HT508;

 • KPB (Ν, 'bis (naphthalene 1-yl) -Ν, Ν'-bis (phenyl) -

• beta NPB Ν, Ν'-bis (naphthalen-2-yl) -Ν, Ν'-bis (phenyl) benzidine); TPD (Ν, Ν'-bis (3-rethylphenyl) -Ν, Ν'-bis (phenyl) -benzidine); Spiro TPD (Ν, Ν'-bis (3-methylphenyl) -N, '-bis (phenyl) -benzidine);

Spiro-NPB (N, '- bis (naphthalen-1-yl) - N,' - bis (phenyl) - spiro); DMFL-TPD N, N'-bis (3-methylhexyl) -N, N ¹ -bis (phenyl) -9, 9-dimethyl-fluorene);

 • D FL-NPB (Ν, Ν'-bis (naphthalen-1-yl) -Ν, Ν'-bis (phenyl) -9,9-dimethyl-fluorene);

 DPFL-TPD (Ν, Ν'-bis (3-rethylphenyl) -, Ν'-bis (phenyl) -9,9-diphenyl-fluorene);

 DPFL-NPB (Ν, Ν'-bis (naphthalen-1-yl) -Ν, Ν'-bis (phenyl) -9,9-diphenylfluorene);

Spiro-TAD (2, 2 ', 7, 7'-tetrakis (n, -diphenylamino) -9,9 ¹ -spirobifluorene);

 • 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -henyl] -9H-fluorene;

 • 9,9-bis [4- (N, -naphthalen-2-ylamino) phenyl] -9K fluorene;

 • 9,9-bis [4- (N, N'-bis-naphthalene-2-yl, K '-bis-phenyl-amino) -phenyl] -9H-fluoro;

 • Ν, Ν'-bis (phenanthrene-9-yl) -, '-bis (phenyl) -benzidine;

• 2, 7-bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spiro-bifluorene;

 2,2'-bis [Ν, Ν-bis (biphcyl-4-yl) amino] 9,9-spirobifluorene;

 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene;

 Di- [4- (N, N-ditolyl-amino) -phenyl] eyelohexane;

2, 2 ', 7, 7' -tetra (N, -di-tolyl) amino-spiro-bifluorene; and • N, Ν, Ν ', Ν'-tetra-naphthalene-2-yl-bericidin

 • aNPD, NHT5, NHT18, NHT49.

In one embodiment, the dopant of the at least one hole-ending layer one of the following substances

comprise or be formed from: aNPD, HAT-C, Cu (I) pFBz, MoO _x, W0 _X, V0 _X, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, Fl6CuPc.

In one embodiment, the p-type dopant may have a

Mass fraction with respect to at least one

electron conducting layer in a range of about 0.1% to about 10%, for example in a range of about 1% to about 2%.

In one embodiment, the at least one

electron-conducting layer an intrinsic

have electron-conducting substance or be formed therefrom.

In one embodiment, the intrinsic

Electron conductive layer one of the following substances

or formed from: Bi (III) pFBz, FloCuPc, NDN-1, NDN-26, MgAg, CS2CO3, CS3PO4, Na, Ca, K, Mg, Cs, Li, LiF, AlO3.

In one embodiment, the at least one

Electron-conducting layer may be formed from a mixture of matrix and n-type dopant.

In one embodiment, the matrix of the at least one electron-conducting layer may include or be formed from one of the following substances:

 NET-18, NET-5, NDN-26, ETM033, ETM036, BCP, BPhen;

2, 2 ', 2 "- (1,3,5-triethylenetriyl) tris (1-phenyl-1H-benzimidazoi); 2- (4-biphenylyi) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-l, 10-phenanthroline (BCP);

 8-hydroxyquinolinolato-li hiuni, 4- (naphthalen-1-yl) -3, 5-diphenyl 4H-1,2,4-triazole;

 1, 3-bis [2- (2,2'-bipyridin-6-yl) -1, 3, 4-oxadiazol-5-yl-benzene

 4,7-diphenyl-, 10-phenanthroline (BPhen)

 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,2,4-triazole;

 Bis (2-methyl-8-quinolinolato) -4- (phenylphenolato) aluminum;

 6,6'-bis [5- (biphenyl-4-yl) -1,3, -oxadiazo-2-yl] -2,2'-bipyridyl;

 2-phenyl, 10-di (naphthalen-2-yl) anthracene;

 2, 7-bis [2- {2,2'-biplyidine-6-yl) -1,3,4-oxadiazo-5-yl] -

9, 9 -dimethylfluorene;

 1, 3-bis [2- {4-tert-butylphenyl} -1,3,4-oxadiazo-5-yl] benzene;

 2- (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthrolines, · 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthrolines;

 Tris (2,4,6-trimethyl-3 - (pyridin-3-yl) -henyl) -borane;

 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4, 5-f J [1, 10] henanthroline;

 Phenyl-dipyrenylphosphinoxid;

 Naphthalenetetracarboxylic dianhydride or its imides; Perylenetetracarboxylic dianhydride or its imides; and fabrics based on siloles with a

 Silacyclopentadieneinhe.it.

In one embodiment, the n-type dopant of the at least one electron-conducting layer may include or be formed from one of the following: NDN-1, NDN-26, MgAg, CS2CO3, CS3PO4, Na, Ca, K, Mg, Cs, Li, LiF , AlQ3. In an embodiment, the ri-dopant may have a mass fraction with respect to the hole-conducting layer in a range of about 0.1% to about 10%,

 for example, in a range of about 1% to about 2%.

In one embodiment, the n-dopant may have a higher or a lower mass fraction of the at least one electron-donating layer of matrix and n-type dopant

 have as the p-type dopant at the hole-conducting layer of matrix and p-type dopant. In other words: the

at least one hole transporting layer and the electron conducting layer at least one ^• may be asymmetrically doped. In one embodiment, the varistor may comprise a carrier matrix and at least one material, the varistor properties

 have, have or be formed from, wherein the

 Material with varistor properties in the carrier matrix

 is embedded.

In one embodiment, the material of the carrier matrix can be set up in such a way that the varistor can be moved according to the

 Forming the varistor has dimensional stability, i. the

 Viscosity and modulus of elasticity of the support matrix does not change by heat and / or electromagnetic radiation such that the support matrix is mouldable, i. becomes liquid and or plastically deformable. In other words: that

 Material of the carrier matrix of the varistor can be so

 be set up that the varistor in the operation of

 organic, optoelectronic component has dimensional stability.

In one embodiment, the carrier matrix of the varistor may comprise an electrically insulating material.

In one embodiment, the carrier matrix of the varistor may comprise as material one of the following materials or be formed from it; a crosslinked, electrically nonconducting polymer, for example an elastomer, an epoxide, a silicone or a silazane. In one embodiment, the at least one material having varistor properties may comprise or be formed from one of the following substances or a stoichiometric compound thereof: silicon carbide, a metal oxide, for example a zinc oxide, bismuth oxide, chromium oxide, manganese oxide or

Cobalt oxide.

In one embodiment, the at least one varistor-type material of the varistor may be formed in the form of a plurality of particles in the carrier matrix of the varistor, the particles being, for example, an arbitrary, i. random shape, for example as flakes (flakes); or may have a spherical shape.

In one embodiment, at least two particles with Varistoreigenschatten different materials with

 Have varistor properties, for example, a varistor points. at least one zinc oxide particle and at least one silicon carbide particle; or a zinc oxide particle and a zinc oxide particle with another material,

for example, with varistor properties, for example

Silicon carbide or other material, such as aluminum.

In one embodiment, the two particles with

different materials having varistor properties, may be arranged to form an electric field at the interfaces of the particles having varistor characteristics, i. it can be used to form a

Space charge zone come.

In one embodiment, the particles with

Varistor characteristic, so in the carrier matrix of the Varistors may be arranged such that an electrically continuous connection of material with

Varistor properties is formed by the carrier matrix of the varistor, wherein to the carrier matrix with

Particles with varistor properties can connect a carrier matrix with conductive particles, a conductive carrier matrix and / or a conductive layer.

An electrically continuous connection of the particles with varistor properties can be considered electrical

Connection to be understood parallel to the current direction of the organic, optoelectronic component. It is essential to electrically connected in parallel to the organic, optoelectronic device electrically continuous connection of particles with

 Va istoreigenschaften in the carrier matrix of the varistor, the response of this continuous

contiguous connection is formed above the threshold voltage of the organic, optoelectronic component and below the breakdown voltage of the organic, optoelectronic component. The continuous

contiguous connection may have an arbitrary, i.e., random, path or a directional, approximately linear path.

In one embodiment, the particles with

Varistor properties parallel to the current flow direction of the organic, optoelectronic component be formed in such a way in the carrier matrix of the varistor that the

Response voltage of the varistor greater than a first

 Voltage value and less than a second voltage value. In one embodiment, the first voltage value may be approximately equal to the value of the response voltage of the organic,

Have optoelectronic component, ie, the varistor has a response, up to which the organic, optoelectronic device can work regularly. The operating voltage of the varistor should be above the Threshold voltage be formed because a varistor no

 Reverse direction, i. point symmetric with respect

 Umpolung works. The varistor can be below the

Response voltage have the highest possible resistance, for example in a range of about 50 kü to about 50 Ω or a low current flow, for example in a range of about 0, 1 μΑ to about 10 μΑ. In one embodiment, the second voltage value may have a value lower than the breakdown voltage of the organic optoelectronic component and / or smaller ^■ to be the voltage at which it in the organic,

 Optoelectronic device comes to irreversible damage. The second voltage value of the varistor may be dependent on the design of the organic optoelectronic component, since the magnitude of the breakdown voltage of the organic, optoelectronic component depends on the configuration of the organic, optoelectronic component

 Component is. For example, the second

 Voltage value of the varistor may have an amount in a range of about 4 V to about 200 V, for example, greater than about 4 V, for example greater about 8V, for example greater about 16 V. ,

In the voltage range between response voltage of the varistor and breakdown voltage of the organic, optoelectronic component, the differential conductivity of the varistor should be designed such that in the model of an electrostatic discharge of a human body (human body model HBM), with a voltage above the

 Breakdown voltage of the organic, optoelectronic component, on a series resistor connected in series with a resistance value of 1500 Ω, across the parallel circuit of Varl stor and organic,

optoelectronic component, the voltage drop across the organic, optoelectronic device always below which is due to chlagspannung the organic, optoelectronic component. For example, the low

lead the differential conductivity of silicon carbide that at a response of the varistor with a value of about the threshold voltage of the organic,

Optoelectronic Bauelemen it is the voltage that drops across the series resistor, is too low, so that a voltage above the breakdown voltage of the organic,

optoelectronic device over the organic,

optoelectronic component is applied, i. it can be for

 Penetration in the organic, optoelectronic device come.

Above the first voltage value and below the second voltage value, the varistor should become conductive, i. The electrical resistance should be very small with respect to the resistance of the organic, optoelectronic

Device, for example in a range of about 0 Ω to about 20 Ω, for example, 0.2 Ω.

In one embodiment, the varistor may be configured such that the material of the carrier matrix and the material with

Varistor properties are about the same thermal

Have expansion, i. the carrier matrix compensates for the expansion by means of an electric current

resulting waste heat of the particles with varistor properties, the heat also on the electrically lextfähigen

Sections of the overvoltage protection structure can be supplied or removed.

In one embodiment, the varistor may comprise one or more layers of the organic, optoelectronic. Partially or completely penetrate component, for example, be formed vertically in the organic, optoelectronic device. The macroscopic nature of the varistor, such as the size of the varistor, may be dictated by the nature of the particles having varistor characteristics and the spacing of the electrically conductive portions of the varistor

Surge protection structure to be determined from each other.

 What is essential is the number of particle interfaces at which an electric field can form, which are directed counter to the external electric field, since the response voltage of the varistor is proportional to this number.

In one embodiment, the overvoltage protection structure can be designed in such a way that a dielectric, for example air, is formed between the first electrically conductive section and the second electrically conductive section. The first electrically conductive portion and the second electrically conductive portion may be arranged relative to each other and arranged relative to each other, that from a voltage applied to the first electrically conductive portion and the second electrically lei-capable portion response, a spark gap between the first electrically conductive portion and the second electrically conductive portion is formed; wherein the response voltage has as value an amount which is greater than the magnitude of the threshold voltage of the organic, optoelectronic component and less than the magnitude of the breakdown voltage of the organic, optoelectronic component is formed and / or smaller than that

Be tension, in which it is in the organic,

Optoelectronic device comes to irreversible damage. The second voltage value of the spark gap may depend on the design of the organic

optoelectronic component, since the amount of

Breakdown voltage of the organic, optoelectronic component is dependent on the configuration of the organic, optoelectronic component. For example, the second voltage value of the spark gap may be an amount in one Range from about 4V to about 200V, for example greater than about 4V, for example greater than about 8V, for example greater than about 16V. The actual operating voltage of the spark gap for an organic, optoelectronic component can depend on the specific embodiment of the electrically conductive

Sections and the dielectric between the electrically conductive sections, so often a

Voltage range is specified, within which a

 Spark gap between the electrically conductive sections is formed at a certain distance. For one

Spark gap, the typical dielectric breakdown strength of air as a dielectric may have a response voltage in a range of about 1 kV / mm to about 3 kV / mm. For electrically conductive sections spaced 1 mm apart, a spark may skip and discharge may occur when the potential difference between the electrically conductive sections has a value greater than about 3k. At least from this

 Potential difference can be the electrical resistance of the

Spark gap are very small with respect to the resistance of the organic, optoelectronic device in

Locking direction, for example in one. Range of about 0 Ω to about 500 Q. At about 1 kV, however, at a distance of 1 mm and plane-parallel is electrically

conductive sections can not be expected to discharge.

For other dielectrics, the response voltage may be different than in air. With the choice of the dielectric at a constant distance, the operating voltage of the

Spark gap can be changed.

In one embodiment, the dielectric between the first electrically conductive portion and the second electrically conductive portion may include or be formed from one of the following: an electrical insulating, crosslinkable organic and / or inorganic compound, for example an epoxy resin, a silicone or a ceramic. In one embodiment, the dielectric between the first electrically conductive portion and the second electrically conductive portion may include or be formed from a vacuum or a gas; For example, air, oxygen, carbon dioxide, nitrogen, ozone or a noble gas.

However, the electrically conductive connections should be set up such that the value of the response voltage of the

Spark gap between the threshold voltage of the too

protective organic, optoelectronic component and the breakdown voltage of the organic, optoelectronic component is formed.

Up to the minimum value of the operating voltage of

 Spark gap should be the organic, optoelectronic

Component can work normally without a spark

between the electrically conductive sections, i. a spark gap is formed. A typical value for a threshold voltage of an organic, optoelectronic

Component, such as an organic light emitting diode, may be dependent on the Ausgestal tion of the organic optoelectronic device and, for example, in a

Range from about 0 V to about 50 V, for example in a range from about 4 V to about 15 V.

The response voltage of the spark gap, ie the voltage which is necessary to form a sparkover between the first electrically conductive section and the second electrically conductive section, will therefore have at least one voltage value greater than the magnitude of the threshold voltage of the organic, optoelectronic Component is. The spark gap can be below the

Response voltage have the highest possible resistance, for example in a range of about 1 Ω to

about 1 GQ or a low current flow, for example in a range of about 10 μΑ to about 100 μΑ.

The voltage value of the spark gap is formed from the latest a sparkover, i. the maximal

Response voltage of the spark gap in which it comes to reducing the potential difference, should be formed below the voltage of the optoelectronic component, in which there is an irreversible damage to the optoelectronic device, otherwise protection of the

optoelectronic component before electrostatic

 Discharges can not be guaranteed. A typical breakdown voltage may, depending on the configuration of the optoelectronic component, have an amount, for example, greater than approximately 4 V, for example, greater than approximately 8 V, for example greater than approximately 15 V.

An embodiment of the electrically conductive sections which satisfy these conditions may, for example, have a distance of about 50 pm and an air dielectric. This embodiment has the advantage that it can be easily produced or executed in terms of process technology.

In one embodiment, the first electrically conductive section can be electrically conductive relative to the second

Abschni t, for example, complementary, perpendicular, parallel, concentric or divergent aligned. A divergent orientation of the electrically 1ei capable sections can be set up, for example, as a horn bow and / or Jacob's ladder. As a result, the radio treble can be deleted when the voltage drops below the operating voltage. In one embodiment, the surface of the first

 electrically conductive portion and / or the surface of the second electrically conductive portion between which forms the spark gap, a

 Surface geometry of the following geometric shapes have: flat, round, rough, pointed, and / or complementary to each other, 0 electrically conductive sections with tapered shape, for example, similar to a tip or similar one

 Be formed rounding. By means of the tapered shape, the minimum value of the response voltage can be reduced since the tapered shapes can locally have a higher field strength than planar shapes.

The geometric shapes can be so regular

 be set up that they have a geometric axis of symmetry, wherein the symmetry axis may be a Spiegelleichie0 and / or additionally a rotational symmetry.

In one embodiment, the smallest distance of the first electrically conductive portion from the second electrically conductive portion, between which forms the spark gap 5, have a value in a range of about 1 μιτι to about 100 microns.

In one embodiment, the first electrically conductive section and the second electrically conductive section may be surrounded by an encapsulation, for example in one

Be included cavity, part of a sectional plane of a ^' carrier of the optoelectronic component, or be surrounded by a potting material having, for example, an electrically insulating, crosslinkable organic and / or inorganic compound, for example a

Epoxy resin or a silicone. The encapsulation can serve as mechanical protection for the

be formed electrically conductive portions such that the distance between the surfaces of the electrically conductive portions and the shape of the surfaces of the electrically conductive portions with respect to outer

 Force effects, such as a shock, impact, camber or bending, before changes, such as increasing or decreasing the distance or deforming the surface of the electrically conductive

Sections are protected.

In one embodiment, the encapsulation may be such

be set / that the dielectric, such as air, from environmental influences, such as changing the humidity and / or an irradiation ionizing

Radiation, such as UV radiation or X-rays, is protected. These environmental influences could change the necessary voltage which should be present across the electrically conductive sections such that the formation of a spark gap at a value of the applied voltage

be formed, which is below the threshold voltage of the organic, optoelectronic device to be protected or above the Durchbruchspamiung of the protected organic optoelectronic device and so may affect the function of the device to be protected or the ESD protection.

In various embodiments, a method for producing an organic, optoelectronic

Component device provided, the method

comprising: forming an organic, optoelectronic component and an overvoltage protection structure on or above a carrier, wherein the overvoltage protection structure and the organic, optoelectronic component have at least one common layer; and where the

Overvoltage protection structure is electrically connected to the organic, optoelectronic device. In various embodiments, a method for producing an organic, optoelectronic

Component device provided, the method

comprising: forming an organic optoelectronic device comprising a first electrode and a second electrode, and an overvoltage protection structure having a first electrically conductive portion and a second electrically conductive portion on or above a support; wherein the overvoltage protection structure and the organic, optoelectronic component have at least one common layer, wherein the overvoltage contactor structure is electrically connected to the organic 'optoelectronic' component, the first being electrically connected

conductive portion is a portion of the first electrode and / or the second electrically conductive portion

Area of the second electrode is; and where the

Overvoltage protection structure has a spark gap. In one embodiment of the method, the organic, optoelectronic component can be formed as an organic light-emitting diode or an organic solar cell.

In one embodiment of the method, the

Overvoltage protection structure electrically formed serially to the organic, optoelectronic device

Fourden.

In one embodiment of the method, the

Overvoltage protection structure can be formed as a protective diode, wherein the protective diode in the forward direction to the forward direction of the organic, optoelectronic

Component is formed. In other words, the protective diode formed serially to the organic, optoelectronic component can have a forward direction

have, which corresponds to the forward direction of the organic, optoelectronic component. In one embodiment of the method, the protective diode can be formed such that the breakdown voltage of the protective diode in the reverse direction is greater than one on the organic, optoelectronic component device in FIG

Reverse direction of the organic optoelectronic component occurring voltage pulse.

In one embodiment of the method, the organic, optoelectronic component can be formed with a first electrode and a second electrode and the

Overvoltage protection structure with a first electrically conductive portion and a second electrically - 1eitfähige gate are formed, wherein at least one electrically conductive portion of the overvoltage protection structure with an electrode of the organic,

Optoelectronic component is electrically coupled.

In one embodiment of the method, the

Overvoltage protection structure can be formed electrically parallel to the organic, optoelectronic device.

In one embodiment of the method, the organic, optoelectronic component can be formed with a first electrode and a second electrode and the

Overvoltage protection structure having a first electrically conductive portion connected to the first electrode

is electrically coupled and a second electrically

conductive gate are formed, which is electrically coupled to the second electrode.

In one embodiment of the method, the first

electrically capable section another material

have as the second electrically conductive portion and / or the first electrode and / or the second electrode. In one embodiment, the first electrically conductive portion may be a region of the first electrode and / or the second electrically conductive portion may be a region of the second electrode.

In one configuration of the method, the organic, optoelectronic component device may be formed with a first contact pad and a second contact pad, wherein the contact pads for electrically contacting the organic, optoelectronic component device are set up and wherein the first electrically conductive portion and / or the first electrode as at least one area of the first contact pad is / are set up and / or wherein the second electrically conductive portion and / or the two electrodes is / are set up as at least one area of the second contact pad.

In one embodiment of the method, the electrically conductive portions may be in an overlapping arrangement, i. mutually offset arrangement and / or shifted arrangement are formed to each other, wherein parts of the electrically conductive portions parallel to each other

can be formed, for example, at a distance from each other. The electrically conductive sections can also be formed in different planes,

for example, in the sense of different layers in a cross-sectional view or drawing plane, for example, similar to a cross.

In one embodiment of the method, the electrically conductive sections in a complementary shape and / or

Arrangement are formed to each other, wherein the first electrically conductive portion partially and / or

completely perpendicular and / or parallel to the second

electrically conductive portion is formed.

In one embodiment of the method, a parallel

Arrangement of the electrically conductive sections For example, be formed as a partially and / or completely concentric arrangement and / or coaxial arrangement of the electrically conductive sections. The second electrically conductive section may form the inner electrically conductive region of a concentric arrangement of electrically conductive sections, wherein the interior of the second electrically conductive section

for example, may be hollow or, for example, a

may comprise electrically insulating material, or

for example, the same, a similar or different electrically conductive material as or as the first electrically conductive portion,

The electrically conductive portions may be formed, for example, in a planar shape and / or a tapered shape. For example, a surface of electrically conductive portions may be formed similarly to a pin or similar to a planar plane

be formed. For example, electrically conductive sections having planar shapes may be formed similar to a pin or similar to a planar one

Level. Electrically conductive portions with a zula fenden shape can be formed, for example, similar to a tip or similar to a rounding.

In one embodiment of the method, the

Overvoltage protection structure can be formed as a varistor, wherein the varistor electrically parallel to the

organic optoelectronic component is formed.

In one embodiment of the method, the varistor can be formed on one of the surfaces of the organic, optoelectronic component. In one embodiment of the method, the varistor can be partially or completely formed by layers of the organic, optoelectronic component. This kind the embodiment can also be understood as forming a varistor in the interior of the organic, optoelectronic component. In one embodiment of the method, the varistor can be formed in the interior of the organic, optoelectronic component such that the varistor with respect to further layers of the organic, optoelectronic

Component is electrically isolated.

In one embodiment of the method, the

Overvoltage protection structure may be formed as a protective diode, wherein the protective diode is formed electrically parallel to the organic optoelectronic device.

In one embodiment, the protection diode may be such

be formed so that the operating voltage of the protective diode in the reverse direction of the organic, optoelectronic

Component is smaller than the breakdown voltage of the organic, optoelectronic device in the reverse direction, for example, with respect to a voltage pulse occurring at the organic optoelectronic device in

Reverse direction. In one embodiment of the method, the

 Overvoltage protection structure as a spark gap

be formed, wherein the spark gap is formed electrically parallel to the organic optoelectronic device.

In one embodiment of the method, the common layer can be structured, for example around the

Overvoltage protection structure at least partially

form, for example, the first electrically

 conductive portion and the second electrically conductive

Form section from the layer of one of the electrodes of the organic, optoelectronic component. In one embodiment of the method, the common layer may comprise at least one electrode of the organic,

optoelectronic component and at least one

have electrically conductive portion of the surge arrester structure or be formed as such.

In one embodiment of the method, the

Surge protection structure next to the organic,

optoelectronic component can be formed.

In one embodiment of the method, the

Surge contactor structure on or above the

be formed organic optoelectronic device.

In one embodiment of the method, the

organic, optoelectronic device can be formed on or over the overvoltage protection structure.

In one embodiment of the method, the

Overvoltage protection structure can be formed as a structured region of the organic, optoelectronic component.

In one embodiment of the method, the organic, optoelectronic component device can have an optically active region and an optically inactive region

wherein the overvoltage protection structure is formed in the optically inactive region.

In one embodiment of the method, the

Overvoltage protection structure can be formed in the geometric edge region of the organic, optoelectronic component, for example in the edge region in the interior of the

organic, optoelectronic component or on or above the organic, optoelectronic component. In a Ausges of the procedure, the

 Overvoltage protection structure on a surface of the

 organic, optoelectronic component are formed exposed, are surrounded by an electrically insulating layer or an electrically conductive layer.

In one embodiment of the method, at least a part of the overvoltage protection structure on the first

 Contact pad and or the second contact pad are formed, for example, as a varistor bridge,

 In various embodiments of the method, the overvoltage protection structure can be embodied as a configuration of one or more spark gap (s), protection diode (s) and / or

 Varistor / s, which can be electrically connected to each other in series or in parallel, are formed.

In one embodiment of the method, a

 Overvoltage protection structure may be formed such that it comprises at least two protective diodes, which are electrically parallel or in series with each other, wherein the Überspannungsschunzs structure el Ektrisch is formed in parallel or in series with the organic optoelectronic device.

In one embodiment of the method, a

Overvoltage protection structure may be formed such that the overvoltage protection structure has electrically parallel to the organic optoelectronic component at least two protective diodes, which are connected to each other in series and whose forward direction is opposite. For example, the protection diodes may be formed to have an amount of the response voltage of about 0.6 V and, for example, an amount of the breakdown voltage in a range of about 4 V to about 15 V. The value of the breakdown voltage may be dependent on the configuration of the organic optoelectronic component and, for example, have a value in a range of about 4V to about 1000V.

In various embodiments of the method, a protection diode may be formed such that the protection diode has a configuration of two or more pn junctions, i. Diodes, for example, in a series circuit or Para11elscha11ung, for example in a

unidirectional or bidirectional configuration.

In one embodiment of the method, a protective diode can be formed such that it is a suppressor diode in a unidirectional or a bidirectional

Configuration has.

The protective diode described below can be found in

various embodiments of the method electrically

be formed in parallel or in series with the organic optoelectronic device.

In one embodiment of the method, the organic, optoelectronic component device can be designed such that the response time of the protective diode is smaller than the response time of the organic, optoelectronic

Component,

In one embodiment of the method, the protective diode may be formed with at least one hole-conducting layer and at least one electron-conducting layer such that at least one hole-conducting layer has a physical contact to wenigs ens an electron-conducting layer; and at least one hole-conducting layer is electrically connected to the first electrically conductive portion and at least one electron-conducting layer is electrically connected to the second electrically-conductive portion. At a common interface of the at least one Electron-conducting layer with the at least one

hole-conducting layer pairs of charge carriers can be generated. In one embodiment of the method, at least one electron-conducting layer having a layer thickness in a range from about 1 nm to about 500 nia can be formed. In one embodiment of the method, at least one hole-conducting layer having a layer thickness in a range from approximately 1 nm to approximately 500 nm can be formed.

In one embodiment of the method, the substance or the mixture of substances may have a transmittance greater than approximately 90% in a wavelength range of approximately 450 nm to approximately 650 nm, little in the form of an electron-conducting layer and / or the hole-conducting layer. In one embodiment of the method, the substance or the substance mixture of a hole-conducting layer may have a valence band approximately equal to the conduction band of the substance or of the material

Have mixtures of the electron-conducting layer with which the hole-conducting layer is in physical contact.

In one embodiment of the method, the at least one electron-conducting layer and / or the at least one hole-conducting layer may comprise or be formed from a mixture of a matrix and a dopant. A substance mixture of matrix and dopant can be formed for example by means of co-evaporation of the substances of the matrix and the doping on or via a substrate. In an embodiment of the method, the at least one hole-conducting layer may comprise or be formed from an intrinsically hole-conducting substance. In one embodiment of the method, the at least one hole-conducting layer, one of the intrinsic

 hole-conducting substances of an embodiment of the intrinsically hole-conducting layer of the optoelectronic component (see above) or are formed therefrom.

In one embodiment of the method, the little ens can be formed a hole-conducting layer of a mixture of matrix and p-type dopant.

In one embodiment of the method, the matrix of the ^* can be at least one hole-conducting layer comprises a material of a Ausges tra ting the matrix of the at least one hole-conducting layer of the optoelectronic component (see above) have or are formed therefrom.

In one configuration of the method, the dopant of the at least one hole-conducting layer may comprise or be formed from one of the substances of an embodiment of the dopant of the at least one thermally conductive layer, the optoelectronic component (see above).

In one embodiment of the method, the p-type dopant may have a mass fraction relative to the at least one

 electron conducting layer in a range of about 0.1% to about 10%, for example in a range of about 1% to about 2%. In one embodiment of the method, the at least one electron donating layer may be intrinsic

 have electron-conducting substance or be formed therefrom. In one embodiment of the method, the intrinsic electron-conducting layer can be one of the substances of a

Design of the intrinsically electron-conducting layer of optoelectronic component (see above) or formed therefrom.

In one embodiment of the method, the at least one electron-conducting layer can be formed from a mixture of matrix and n-dopant,

In one embodiment of the method, the matrix of the at least one electron-conducting layer can be one of the substances of an embodiment of the matrix of the least one ens

electron-conducting layer of the optoelectronic

Component {see above) have or be formed from it. In one configuration of the method, the n-dopant of the at least one electron-conducting layer may be one of the substances of an embodiment of the at least one

electron-conducting layer of the optoelectronic

Component (see above) have or be formed from it.

In one embodiment of the method, the n-dopant may have a mass fraction relative to the at least one

hole-conductive layer in a range of about 0.1% to about 10%, for example in a range of about 1% to about 2%.

In one configuration of the method, the n-dopant may have a higher or a lower mass fraction of the at least one electron-conducting layer of matrix and n-dopant than the p-dopant on the

hole-conducting layer of matrix and p-dopant. In other words, the at least one hole-conducting layer and the at least one electron-conducting layer can be asymmetrically doped. In one embodiment of the method, the varistor can be a carrier matrix and at least one material that

 Has varistor characteristics, or from it

 are formed, wherein the material is embedded with varistor properties in the carrier matrix.

In one embodiment of the method, the material of the carrier matrix can be set up in such a way that the varistor, after the formation of the varistor, has the shape of a rod, i. the viscosity and elastic modulus of

 Carrier matrix changes by means of heat and / or

! electromagnetic radiation not such that the

 Carrier matrix formable, i. liquid and or plastic

 becomes deformable. In other words: the material of

 The carrier matrix of the varistor can be or be set up such that the varistor has dimensional stability during operation of the organic, optoelectronic component.

In one embodiment of the method, the carrier matrix of the varistor may comprise or be formed from an electrically insulating material.

In one embodiment of the method, the carrier matrix of the varistor as material may be one of the following substances

 or formed from: a crosslinked, electrically non-conductive polymer, for example an elastomer, an epoxide, a silicone or a silazane.

In one embodiment of the method, the at least one material with varistor properties can be one of the following

Comprise or be formed from substances or a stoichiometric compound thereof: silicon carbide, a metal oxide, for example a zinc oxide, bismuth oxide, chromium oxide,

 Manganese oxide or cobalt oxide.

In one embodiment of the method, the at least one material with varistor properties of the varistor in the form a plurality of particles may be formed in the carrier matrix of the varistor, wherein the particles may, for example, have an arbitrary, ie random, shape, for example as flakes or a spherical shape.

In one embodiment of the method, at least two particles with varistor properties can be different

Have materials with varistor properties,

For example, a varistor has at least one zinc oxide particle and at least one silicon carbide particle or a zinc oxide particle and a zinc oxide particle with a further material, for example with

 Varistor properties, such as silicon carbide or other material, such as aluminum.

In one embodiment of the method, the two

Particles with different materials the

Have varistor properties, be set up so that at the interfaces of the particles with

Varistor properties an electric field is formed, i. it can come to form a space charge zone.

In one embodiment of the method, the particles with varistor properties can be so in the carrier matrix of the

Varistors are arranged so that an electrically continuous connection of material with

Varistor properties formed by the carrier matrix, which is attached to the carrier matrix with particles

Varistor properties a carrier matrix with conductive

Particles, a conductive carrier matrix and / or a

can connect conductive layer.

An electrically continuous connection of the particles with varistor properties can be considered electrical

Connection to be understood parallel to the current direction of the organic, optoelectronic component. Essential is a for. organic, optoelectronic component 4β

electrically connected in parallel electrically continuous connection to particles with

Varistor properties in the carrier matrix of the varistor, wherein the response voltage of this continuous

contiguous connection above the Schwe11s tion of the organic, optoelectronic device and is formed below the breakdown voltage of the organic, optoelectronic component. The continuous

Connected compound may cause a whirl, i. Random, path (random walk) or directional, approximately linear path.

In one embodiment, the particles with

Varistor properties parallel to the current flow direction of the organic, optoelectronic component such i der

Carrier matrix are arranged so that the operating voltage of the

Varistor is greater than a first voltage value and less than a second voltage value. In one embodiment of the method, the first

 Voltage value approximately equal to the value of the response voltage of the organic optoelectronic component, i. the varistor has a response voltage up to which the organic, optoelectronic component can work regularly. The varistor should be designed such that the response voltage is formed at least above the threshold voltage of the organic, optoelectronic component, since a varistor has no reverse direction, i.

point-symmetric with respect to polarity reversal works. The varistor can have as high a resistance as possible below the response voltage, for example in a range from approximately 50 kΩ to approximately 50 μΩ or a small one

Strorafluss, for example in a range of about 0.1 μΑ to about 10 μΑ.

In one embodiment of the method, the varistor can be designed such that the second voltage value an amount smaller than the breakdown voltage of

having organic, optoelectronic component

and / or less than the voltage at which irreversible damage occurs in the organic optoelectronic device. The second voltage value of the varistor may be dependent on the design of the organic optoelectronic component, since the amount of

Breakdown voltage of the organic, optoelectronic

Component is dependent on the configuration of the organic, optoelectronic component. For example, the second voltage value of the varistor may have an amount ranging from about 4 V to about 200 V, for example greater than about 4 V, for example greater than about 8 V, for example greater than about 16 V.

In one embodiment of the method, the varistor may be formed such that the material of the carrier matrix and the material having varistor characteristics have approximately equal thermal expansion, i. the

Carrier matrix compensates for the expansion of the heat generated by an electric current waste heat of the particles with varistor properties, the heat also over the

electrically conductive sections of Übe voltage protection structure can be supplied or removed. In one embodiment, the varistor can be formed such that the varistor partially or completely penetrate or surround one or more layers of the organic, optoelectronic component. In one embodiment of the method the

Overvoltage protection structure can be formed such that between the first electrically conductive portion and the second electrically conductive portion, a dielectric is formed, for example, air. The first electrically conductive portion and the second electrically conductive portion may be arranged relative to each other and arranged relative to each other, that from one over the first electrically conductive portion and the second electrically conductive portion adjacent

Ansprechspannung, a spark gap between the first electrically conductive portion and the second electrically conductive portion is formed; the

 Response voltage as a value has an amount that is greater than the amount of Schwe11enspannung of the organic, optoelectronic device and less than the amount of the breakdown voltage of the organic, optoelectronic device is formed and / or smaller than that

Be tension, in which it is in the organic,

Optoelectronic device comes to irreversible damage. The second voltage value of the spark gap may depend on the design of the organic

optoelectronic component, since the amount of

 Breakdown voltage of the organic, optoelectronic component is dependent on the Ausges aging of the organic, optoelectronic device. For example, the second voltage value of the spark gap may have an amount in a range from about 4 V to about 200 V, for example greater than about 4 V, for example greater than about 8 V, for example greater than about 16 V.

In one configuration of the method, the dielectric between the first electrically conductive section and the second electrically conductive section may comprise or be formed from one of the following substances: a

electrically isoiierenden, crosslinkable organic and / or inorganic compound, such as an epoxy resin, a silicone or a ceramic.

In one embodiment of the method, the dielectric between the first electrically conductive portion and the second electrically conductive portion may comprise or be formed from a vacuum or a gas: for example, air, oxygen, carbon dioxide, nitrogen, ozone or a noble gas. In one embodiment of the method, the first

 electrically conductive portion relative to the second

 electrically conductive portion, for example, complementary, perpendicular, parallel, concentric or divergent aligned. An auseinanderla Fende orientation of the electrically conductive sections kan

 for example, as a horn bow and / or Jacob's ladder

 be set up.

In one embodiment of the method, the surface of the first electrically conductive portion and / or the

- Surface of the second electrically conductive portion, between which forms the spark gap, a

 Surface geometry of the following geometric shapes have: flat, round, rough, pointed, and / or complementary to each other.

The geometric shapes can be so regular

 be set up that they are a geometric

 Have symmetry axis, wherein the axis of symmetry a

 Mirror symmetry can be and / or additionally one

 Rotational symmetry. In one embodiment of the method, the smallest

The distance of the first electrically conductive portion from the two electrically conductive portion between which the spark gap is formed has a value in a range of about 1 μm to about 100 μm.

In one embodiment of the method, the first

 electrically conductive portion and the second electrically conductive portion are surrounded by an encapsulation, for example, be enclosed in a cavity, part of a sectional plane of a carrier of the optoelectronic

Component is, or be surrounded by a potting material, for example, an electrically insulating, crosslinkable organic and / or inorganic compound, for example an epoxy resin or a silicone.

The encapsulation can serve as mechanical protection for the

electrically conductive portions are formed such that the distance between the surfaces of the electrically conductive portions and the shape of the surfaces of the electrically conductive portions with respect to outer

Force effects, such as a shock, impact, camber or bending, before changes, such as increasing or decreasing the distance or deforming the surface of the electrically conductive

Sections, are protected, "In one embodiment of the method, the encapsulation can be set up such that the dielectric,

For example, air, from environmental influences, such as changing the humidity and / or a radiation of ionizing radiation, such as UV radiation or X-rays, is protected. These environmental influences could change the necessary voltage that should be present across the electrically conductive sections such that the formation of a spark gap at a value of

be formed adjacent voltage, the below the threshold of the organic to be protected,

optoelectronic component or above the

Breakdown voltage of the organic to be protected,

optoelectronic component takes place and so the function of the protected component or the ESD protection

can affect.

Ausführungsbeisp ele of the invention are illustrated in the figures and are explained in more detail below.

Show it schematic circuit diagrams of an organic, optoelectronic component device, according to various Ausführungsbeis ielen; a schematic cross-sectional view of an organic, optoelectronic device, according to various embodiments; a schematic cross-sectional view of an organic, optoelectronic

 Component device, according to various embodiments;

Schematic views of a

 Overvoltage protection structure of a

 organic, optoelectronic

 Component device, according to various embodiments; schematic views of a

 Overvoltage protection structure of a

 organ, optoelectronic

 Component device according to various Au guide examples; a portion of the organic, optoelectronic component device in the method for producing a

 Overvoltage protection structure, according to

 various embodiments; and shows a schematic plan view of a varistor, according to various

 Application examples.

In the following detailed description, reference is made to the accompanying drawings, which are part of this form and in which specific for illustration

Embodiments are shown in which the invention can be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). There

Components of embodiments in number

different orientations can be positioned, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the

Scope of the present invention is defined by the appended claims.

In the context of this description, the terms

 "connected", "connected" as well as "coupled" used for

Describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements will be given identical reference numerals, as appropriate. FIGS. 1a-d show schematic circuit diagrams of an organic, optoelectronic component device according to FIG

various embodiments.

The radiation already hopping and receiving layers of the organic optoelectronic device 106 may have pn junctions that provide or receive radiation, but a low reverse blocking voltage exhibit. As a result, these layers may be sensitive with respect to an electrical breakdown in the reverse direction or in general terms: with respect to an overvoltage which is caused, for example, by a reverse polarity or a reverse polarity

caused electrostatic discharge.

Instead of an external surge protection structure for

Overvoltage contactor of organic, optoelectronic

Component 106, the overvoltage protection structure is built in various embodiments directly in the organic, optoelectronic device. This can

for example by means of using, structuring and / or stacking suitable substances and / or layers of the organic, optoelectronic component 106

will be realized. For example, the pn junction of the protection diode 108 may be evaporated, printed, and patterned.

In various embodiments, in addition to the z

Radiation-providing and -absorbing layers of the organic, optoelectronic component 106 on or above the carrier of the organic, optoelectronic

Device 106, at least one protection diode 108 may be formed, i. pn junctions having a pure diode action with high reverse blocking voltage and low forward voltage. In other words, in different ways

Embodiments, an overvoltage protection structure may be formed as a protection diode 108 (shown in Fig.la and Fig. Lb). In various embodiments, a protection diode 108 may be formed as a suppressor diode 108 (Transient Absorptio Zener Diode - TAZ Diode or Transient Voltage Suppressor Diode - TVS Diode), Zener Diode 108, or Schottky Diode (shown). A protection diode 108 may also be referred to as an anti-kickback diode 108, a reverse bias diode 108, a flyback diode 108, or a snubbing diode 108. In various forms can a protection diode having a configuration of two or more of the diodes described above, for example, in a series circuit or parallel connection, for example in a unidirectional or a bidirectional

Configuration. For example, in different

 Embodiments, a protective diode, a suppressor diode in a unidirectional or a bidirectional

Have configuration. The organic, optoelectronic component 106 may be formed as a planar organic optoelectronic component 106, for example an OLED 106 or a solar cell 106. The organic, optoelectronic component 106 and the protective diode 108 have common connection structures 102, 104 for electrically contacting, for example common Contact pads 102, 104, wherein the contact pads 102, 104 on the carrier or the operating device of the OLED

 (shown) may be formed.

The protective diode 108 may be at least partially adjacent to, above and / or below the radiation ready portion to be formed and formed - receiving layers of the organic optoelectronic device 106.

The protection diode 108 may be electrically related to the

organic, optoelectronic component to be connected in series - shown in Fig.la (see also Fig.5), or in parallel - shown in Fig. Lb (see also Fig.}.

The protection diode 108 connected in series should be designed such that it has a high reverse voltage resistance, for example a breakdown voltage greater than approximately 600 V. As a result, current flow and destruction of the organic, optoelectronic component 106 can be prevented. In various embodiments, the

Overvoltage protection structure may be formed as a varistor 112 - shown in Fig. Lc (see also Fig.7) - and

electrically parallel to the organic, optoelectronic

Component 106 may be formed. When concerns a

Overvoltage on the circuit 120, the varistor 112 may become electrically conductive and the organic,

optoelectronic component 106 for the duration of

Bridge overvoltage electrically.

In various embodiments, the

Overvoltage protection structure as a spark gap 114

be formed - shown in Figure ld (see also Fig.6c) - and electrically parallel to the organic, optoelectronic device 106 may be formed. When concerns a

Overvoltage on the circuit 130, a spark gap 114 may be formed between the first electrically conductive portion and the second electrically conductive portion of the overvoltage protection structure, whereby the organic optoelectronic component 106 for the duration of

Overvoltage is electrically bridged.

FIG. 2 shows a schematic cross-sectional view of an organic, optoelectronic component according to FIG

various embodiments.

The optoelectronic component 106, for example, an electronic component 106 providing electromagnetic radiation, for example a light-emitting

 Component 106, for example, in the form of an organic light-emitting diode 106, may have a carrier 202. For example, the carrier 202 may serve as a support for electronic elements or layers, such as light-emitting elements. For example, the carrier 202 can be glass,

Quartz, and / or a semiconductor material or any other suitable substance or be formed from it. Further For example, the carrier 202 may comprise or be formed from a plastic film or laminate having one or more plastic films. The plastic can (one or more ^polyolefins' (for example, polyethylene? E) (high or low density or polypropylene PP)} comprise or be formed therefrom. Further, the -plastic

Polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET),

Polyethersulfone (PES) and / or polyethylene naphthalate {PEN) or be formed therefrom. The carrier 202 may comprise one or more of the above-mentioned substances.

The carrier 202 may be a metal or a metal aufweisen- Getting Connected or formed therefrom ^', for example copper, silver, gold, platinum or the like.

A carrier 202 comprising a metal or a

 Metal compound may also be formed as a metal foil or a metal-coated foil.

The carrier 202 may be translucent or even transparent.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is permeable to light,

for example, for the light generated by the Li chtemittierenden device, for example, one or more

 Wavelength ranges, for example, for light in one

Wavelength range of the visible light (for example, at least in a partial region of the wavelength range of 380 um to 780 ran). For example, the term "translucent layer" in various embodiments is to be understood to mean that substantially all of them are in one

Structure (for example, a layer) coupled

Amount of light is also coupled out of the structure (for example, layer), wherein a portion of the light can be scattered here The term "transparent" or "transparent layer" can be understood in various embodiments that a Schich is permeable to light

(For example, at least in a portion of the

Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion.

Thus, "transparent" in different

Embodiments as a special case of "translucent" to look at.

In the event that, for example, a light-emitting monochrome or limited in the emission spectrum

electronic component is to be provided, it is sufficient that the optically translucent layer structure at least i a portion of the wavelength range of the desired monochrome light or for the limited

Emission spectrum is translucent.

In various embodiments, the organic light emitting diode 106 (or else the light emitting devices according to the above or hereinafter described

Embodiments) may be configured as a so-called top and bottom emitter. A top and / or bottom emitter can also be used as an optically transparent component,

For example, a transparent organic light emitting diode, be designated. On or above the carrier 202 may be in different

 Embodiments optionally be arranged a barrier layer 204. The barrier layer 204 may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania,

Haf iumoxide, tantalum oxide lanthanum oxide, silicon oxide,

Silicon nitride, silicon oxynitride, indium tin oxide,

Indium zinc oxide, aluminum-doped zinc oxide, as well Mixtures and alloys thereof. Furthermore, the

Barrier layer 204 in various embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 m.

On or above the barrier layer 204, an electrically active region 206 of the light-emitting component 106 may be arranged. The electrically active region 206 can be understood as the region of the light emitting device 106 in which an electric current is used to operate the

Lich emitting device 106 flows. In various exemplary embodiments, the electrically active region 206 may comprise a first electrode 210, a second electrode 214 and an organic radioactive structure 212, as will be explained in more detail below.

Thus, in various embodiments, on or above the barrier layer 204 (or, if the barrier layer 204 is absent, on or above the carrier 202), the first electrode 210 may be in the form of a first electrode 210, for example

Electrode layer 210) may be applied. The first electrode 210 (also referred to below as the lower electrode 210) may be formed of or be made of an electrically conductive material, such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example

Metal oxides, such as zinc oxide, tin oxide,

Cadmium oxide, titanium oxide, indium oxide, or indium-innate oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, S 02, or Ιη2θ3 also include ternary metal oxygen compounds such as AlZnO, Zn2Sn04, CdSnÖ3, ZnSn03, Mgln.204, GalnOß, Z 2l 20s or In Sri30i2 or mixtures of different transparent conductive oxides to the group of COs and can be used in various embodiments.

Furthermore, the TCOs do not necessarily correspond to one

stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first

Electrode 210 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, and

 Compounds, combinations or alloys of these substances.

In various embodiments, the first

Electrode 210 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is one

Silver layer deposited on an indium-tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers In various embodiments, the first

 Electrode 210 one or more of the following substances

alternatively or in addition to the above-mentioned substances; Networks of metallic nanowires and particles, for example of Ag; Ne twins of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 210 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first

Electrode 210 and the carrier 202 may be translucent or transparent. In the case where the first electrode 210 comprises or is formed of a metal, the first electrode 210 may have, for example, a layer thickness of less than or equal to approximately 25 nm, for example one Layer thickness of less than or equal to approximately 20 nm,

For example, a layer thickness of less than or equal to approximately 18 nm. Furthermore, the first electrode 210

For example, have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness of greater than or equal to about 15 nm. In various

Embodiments, the first electrode 210 a

Layer thicknesses a range from about 10 nm to about 25 nm, for example, a layer thickness ranging from about 10 nm to about 18 nm, for example, a layer thickness ranging from about 15 nm to about 18 nm.

Further, in case that the first electrode 210 comprises a conductive transparent oxide (TCO) or is formed therefrom, the ^'first electrode 210, for example, have a layer thickness in a range from about 50 nm to about 500 nm, for example, a layer thickness in a Range of about 75 nm to about 250 nm, for example, a layer thickness in a range of

about 100 nm to about 150 nm.

Furthermore, if the first electrode 210 is made of, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes which may be combined with conductive polymers or of graphene may be used. Layers and composites are formed, the first electrode 210, for example, a

Layer thickness in a range of about 1 nm to about 500 μm, for example, a layer thickness in a range of about 10 nm to about 400 nm,

For example, a layer thickness in a range of

about 40 nm to about 250 nm. The first electrode 210 may be formed as an anode, ie as a hole-injecting electrode or as

Cathode, that is as an electron-injecting electrode. The first electrode 210 may be a first electrical

Contact pad, to which a first electrical

Potential {provided by a power source (not shown), such as a power source or a voltage source} can be applied. Alternatively, the first electrical potential may be applied to the carrier 202 and then indirectly applied to the first electrode 210. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Furthermore, the electrically active region 206 of the

light emitting device 106 is an organic

functional layer structure 212, which is applied on or above the first electrode 210 or

is trained.

The organic functional layer structure 212 may comprise one or more emitter layers 218, for example with fluorescent and / or phosphorescent emitters, and one or more hole-conducting layers 216 (also referred to as hole-transport layer (s) 220). In

According to various embodiments, alternatively or additionally, one or more electron conduction layers 216 (also referred to as electron transport layer (s) 216) may be provided.

Examples of emitter materials used in the

The light emitting device 106 according to various

Embodiments of the Emitter Layer (s) 218

organic or organic

organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or substituted poly-p-phenylenevinylene} as well as metal complexes, for example Iridi m complexes such as blue phosphorescent ^■ FIrPic (bis (3,5-difluoro-2- (2-pyidyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescent

 Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red

 Phosphorus Ru {dtb-bpy) 3 * 2 (PF) {tris [4,4'-di-tert-butyl- (2,2 ') -bipyridine] ruthenium (III) complex) and blue-fluorescent DPAVBi (4, - Bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent T PA (9, 10-bis [N, N-di- (p-tolyl) -amino] anthracene) and red

 fluorescent DCM2 (dicyanomethyl) -2-methyl-6-ylolidol-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can

 Polymer emitter can be used, which in particular by means of a wet chemical process, such as a spin-on process (also referred to as spin coating), are deposited. The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable

 Emitter materials are also provided in other embodiments.

For example, the emitter materials of the emitter layer (s) 218 of the light emitting device 106 may be selected such that the light emitting device 106 emits white light. The emitter layer (s) 218 may comprise a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)

 Alternatively, the emitter layer (s) 218 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 218 or blue

 phosphorescent emitter layer 218, a green

phosphorescent emitter layer 218 and a red phosphorescent emitter layer 218. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression. ^'

The organic functional layer structure 212 may generally include one or more electroluminescent layers. The one or more electroluminescent

Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules, or a combination of these materials. For example, the organic functional layer structure 212 may be one or more

have electroluminescent layers, which as

 Hole transport layer 220 is or are, so that, for example, in the case of an OLED an effective

Hole injection into an electroluminescent layer or an electroluminescent region is made possible.

Alternatively, in various embodiments, the organic functional layer structure 212 may include one or more functional layers, which may be referred to as a

Electron transport schient 216 is executed or are, so that, for example, in an OLED an effective

Electron ektion in an electroluminescent layer or an electroluminescent region is made possible. As a substance for the hole transport layer 220 can

for example, tertiary amines, Carbazoderivatc, conductive polyaniline or polythio endioxy hiophen be used. In various embodiments, the one or more electroluminescent layers may or may not be referred to as

electroluminescent layer is executed. In various embodiments, the

Hole transport layer 220 may be deposited on or over the first electrode 210, for example, deposited, and the emitter layer 218 may be on or above the

 Hole transport layer 220 may be applied, for example, be deposited. In various embodiments, electrode transport layer 216 may be applied to or over the emitter layer 218, for example, deposited.

In various embodiments, the organic functional layer structure 212 (ie, for example, the sum of the thicknesses of hole transporting slits 220 and

Emitter layer (s) 218 and electron transport layer (s)

216) have a layer thickness of at most approximately 1.5 μm, for example a layer thickness of at most approximately 1.2 μm, for example a layer thickness of approximately approximately 1 μm, for example a layer thickness of approximately approximately 800 nm, for example a layer thickness of approximately approximately 500 nm For example, a layer thickness of at most about 400 nm, for example, a layer thickness of at most about 300 nm. In various embodiments, the organic functional layer structure 212, for example, a

Stack of several directly stacked

have organic light-emitting diodes (OLEDs), each OLED, for example, a maximum thickness of about 1, 5 microns, for example, a layer thickness of at most about 1, 2 microns, for example, a layer thickness of maximally about hr 1, for example, a layer thickness of about a maximum 800 n, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various embodiments, the organic radioactive layer structure 212

For example, have a stack of two, three or four directly superimposed OLEDs, in which case For example, organic functional layer structure 212 may have a layer thickness of at most about 3 pm.

Optionally, the light emitting device 106 may generally include other organic functional layers, for example

arranged on or over one or more

Emitter layers 218 or on or over the or the

Electron transport layer (s) 216, which serve to further improve the functionality and thus the efficiency of the light-emitting device 106.

On or above the organic functional layer structure 212 or optionally on or above the one or more further organic functional layers

Layer structures may be the second electrode 214

 be applied (for example in the form of a second electrode layer 214).

In various embodiments, the second

Electrode 214 have the same substances or be formed therefrom as the first electrode 210, wherein in

various embodiments metals are particularly suitable. In various embodiments, the second

 Electrode 214 (for example, in the case of a metallic second electrode 214), for example, have a layer thickness of less than or equal to about 50 nm,

for example, a layer thickness of less than or equal to approximately 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm,

For example, a layer thickness of less than or equal to about 25 nm, for example, a layer thickness vo less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.

The second electrode 214 may generally be formed similarly to, or different from, the first electrode 210. The two electrodes 214 may be made in one or more embodiments

be formed of a plurality of substances and with the respective layer thickness, as described above in connection with the first electrode 210. In different

 Embodiments, the first electrode 210 and the second electrode 214 are both formed translucent or transparent. Thus, the illustrated in Fig. 1

light emitting device 106 may be formed as a top and bottom emitter (in other words, as a transparent light emitting device 106).

The second electrode 214 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode, so as an electron injecting electrode.

The second electrode 214 may have a second electrical connection to which a second electrical connection

Potential (which is different from the first one)

electric potential), provided by the

 Energy source, can be applied. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

On or above the second electrode 214 and thus on or above the electrically active region 206 may optionally be an encapsulation 208, for example in the form of a Barrier thin film / thin film encapsulation 208.

In the context of this application, a "barrier thin film" 208 or a "barrier thin film" 208 can be understood as meaning, for example, a layer or a layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture). and oxygen, to form. In other words, the barrier film 208 is formed to be resistant to OLED damaging agents such as

Water, oxygen or solvents can not or at most be penetrated to very small proportions. According to one embodiment, the barrier film 208 may be formed as a single layer (in other words, as

Single layer) may be formed. According to an alternative embodiment, the barrier thin film 208 may comprise a plurality of sublayers formed on each other. In other words, according to one embodiment, the

Barrier thin film 208 as a stack of layers (stack)

be educated. The barrier film 208 or one or more sublayers of the barrier film 208 may be formed, for example, by a suitable deposition process, e.g. by means of a

 Atomic Layer Deposition (ALD) according to an embodiment, e.g. plasma-enhanced atomic separation (PEALD) or plasmaless

Atomic deposition method (plasma less atomic layer

Deposition (PLALD)), or by means of a chemical

Chemical Vapor Deposition (CVD) according to another embodiment, e.g. one

plasma enhanced chemical vapor deposition (PECVD) or plasmaless vapor deposition (plasma-less Chemical Vapor Deposition (PLCVD)), or alternatively by other suitable deposition methods.

By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in a

Barrier thin film 208 comprising a plurality of sublayers, all sublayers being formed by an atomic layer deposition process. A layer sequence, which has only ALD layers may also be referred to as ^{"Naiio1aminat.} According to an alternative embodiment, in a

 Barrier thin film 208 comprising a plurality of sub-layers, one or more sub-layers of the bar ierendünnschicht 208 by means of a different deposition method than one

Atomic layer deposition processes are deposited,

for example by means of a gas phase separation process.

The barrier film 208 may, in one embodiment, have a film thickness of about 0.1 nm to about 1000 nm, for example, a film thickness of about 10 nm to about 100 nm according to a

 Ausgestal, for example, about 40 nm according to an embodiment.

According to an embodiment in which the barrier thin film 208 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another

Ausgestal can the individual layers of the

Barrier thin layer 208 have different layer thicknesses. In other words, at least one of

Partial layers have a different layer thickness than one or more other of the partial layer. The barrier film 208 or the individual sub-layers of the barrier film 208 may be formed as a translucent or transparent layer according to an embodiment. In other words, the barrier film 208 (or the individual sub-layers of the barrier film 208) may be made of a translucent or transparent substance (or a mixture of substances that is translucent or transparent),

According to an embodiment, the barrier thin layer 208 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the

Barrier film 208 comprising or being formed from one of the following: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide

Lanthanum oxide, silicon oxide, silicon nitride,

 Silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys

the same. In various embodiments, the barrier film 208 or (in the case of a

Layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 208 comprise one or more high refractive indexes, in other words one or more high content materials

Refractive index, for example, with a refractive index of at least 2.

In one embodiment, the cover 226, for example made of glass, for example by means of a frit bonding (glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometric

Edge regions of the organic optoelectronic component 106 are applied to the barrier film 208.

In various embodiments, on or above the barrier film 208, an adhesive and / or a

Protective varnish 224 be provided, by means of which, for example, a cover 226 (for example, a glass cover 226, a metal foil cover 226, a sealed one

Plastic film cover 226) is attached to the bar ierendünnschicht 208, for example, is glued. In

various embodiments, the optically

translucent layer of adhesive and / or protective varnish 224 have a layer thickness of greater than 1 μm,

for example, a layer thickness of several um. In

In various embodiments, the adhesive may include or may be a lamination adhesive.

In the layer of the adhesive (also referred to as

Adhesive layer} can be embedded in various embodiments still light scattering particles, which leads to a • further improvement of the color angle distortion and the

Outcoupling efficiency. In different

 Exemplary embodiments may be provided as light-scattering particles, for example scattered dielectric particles, such as, for example, metal oxides, such as e.g. Silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide {Ga 2 Oa)

 Alumina, or titania. Other particles may also be suitable if they have a refractive index that is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate, or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles. In various embodiments, between the second electrode 214 and the layer of adhesive and / or resist 224 still an electrically insulating layer

 (not shown) are applied or be

for example, SiN, for example, having a layer thickness in a range of about 300 nm to about 1.5 μm, for example, having a layer thickness in a range of about 500 nm to about 1 μm to be electrically unstable Protect substances, for example, during a wet chemical process.

In various embodiments, the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the refractive index

Cover 226. Such an adhesive may be, for example, a low-refractive adhesive such as a

Acryiate having a refractive index of about 1.3. In one embodiment, for example, an adhesive may be a high refractive index adhesive

having refractive index non-diffusing particles and having a mean refractive index approximately equal to the average refractive index of the organically functional layered structure, for example in a range of about 1.7 to about 2.0. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.

It should also be noted that in various

Embodiments can also be dispensed with entirely an adhesive 224, for example in embodiments in which the cover 226, for example made of glass, are applied to the barrier thin film 208 by means of, for example, plasma spraying.

In various embodiments, the

 Cover 226 and / or the adhesive 224 have a refractive index {for example, at a wavelength of 633 nm) of 1.55.

Furthermore, in various embodiments

additionally one or more antireflection coatings

 (eg, combined with the encapsulation 208,

For example, the Ba ner thin layer 208) in the

Be provided 1ichteir.i11ierenden device 106. 3 shows a schematic cross-sectional view of an organic, optoelectronic component device, according to various embodiments. In the schematic cross-sectional view in FIG. 2, an embodiment of an optoelectronic component according to one of the embodiments of the description of FIG. 1, marked by section 106, is shown as a region of an organic, optoelectronic component device 300 (overvoltage protection structure is not shown).

Shown are: a first electrode 210 formed on or above a carrier 202. On or above the first electrode 210 is an organic functional

 Layer structure 212 formed. About or on the

organic functional layer structure 212, a second electrode 214 is formed. The second electrode 214 is electrically insulated from the first electrode 210 by means of electrical insulation 304. The second electrode 214 may be physically and electrically connected to an electrical connection layer 302. The electric

Bonding layer 302 may be formed in the geometric edge region of carrier 202 on or above carrier 2 02, for example laterally next to first electrode 210. The electrical connection layer 302 is electrically connected to the first one by means of a further electrical insulation 3 04

Electrode 210 isolated. On or above the second electrode 214, a barrier thin film 208 is disposed such that the second electrode 214, the electrical insulation 304, and the organic functional layer structure 212 are surrounded by the barrier film 208, that is, in FIG

Connection of barrier thin film 208 with the carrier 202 are included. The barrier film 208 can hermetically seal the trapped layers from harmful environmental influences. On or above the

Barrier thin film 208 is an adhesive splice 224 arranged such that the Klebschie t 224 the

Barrier thin layer 208 seals surface and hermetically with respect to harmful environmental influences. On or above the adhesive layer 224, a cover 226 is arranged. For example, the cover may be adhered to the barrier film 208 with an adhesive 224

be laminated.

Approximately the region of the optoelectronic component 106 with an organic functional layer structure 212 on or above the carrier 202 can be designated as the optically active region 312. About the area of

optoelectronic component 106 without organic

Functional layer structure 212 on or above the carrier 202 may be referred to as optically inactive region 314. The optically inactive region 314 may, for example, be arranged flat next to the optically active region 312.

An optoelectronic component 106, which is at least translucent, for example transparent, formed, for example, a least translucent carrier 202, at least translucent electrodes 210, 214, an at least translucent, organic functional layer system and a wenigs ens translucent barrier thin layer 208th

on eist, for example, can have two planar, optically active sides - in the schematic cross-sectional view of the top and bottom of the optoelectronic

Component 106. The optically active region 312 of an optoelectronic

 However, device 106 may also have only one optically active side and one optically inactive side,

For example, in an optoelectronic component 106, which is designed as To emitter or bottom emitter, for example by the second electrode 106 or the

Barrier thin film 208 is reflective for ready e electromagnetic radiation is formed. The carrier 202, the first electrode 210, the organic functional layer structure 212, the second electrode 214, the barrier film 208, the adhesive layer 224, and the cover 226 may be, for example, according to any one of

 Embodiment of the descriptions of Fig.l be established.

The electrical insulations 304 are set up such that current flow between two electrically conductive regions, for example between the first electrode 210 and the second electrode 214, is prevented. The shock or the substance mixture of the electrical insulation can

For example, be a coating or a coating agent, such as a polymer and / or a paint. The lacquer may have, for example, a coating substance which can be applied in liquid or in powder form,

For example, have or be formed from a polyimide. The electrical insulation 304 can be applied or formed, for example by means of a printing process, for example, structured. The printing process may, for example, comprise ink-jet printing, screen-printing and / or pad-printing The electrical connection layer 302 may be a substance or mixture of substances, a substance or a mixture of substances similar to the electrodes 210, 214 according to one of the embodiments of

Descriptions of Fig.l have or be formed from it. The optically inactive region 314 may be, for example

Contact pads 102, 104 for electrically contacting the organic functional layer structure 212 have. In other words, in the geometric edge region, the optoelectronic component 106 may be formed such that contact pads 102, 104 are configured to electrically contact the optoelectronic component 106, for example by electrically conductive layers, for example, electrical connection layers 302,

 Electrodes 210, 214 or the like in the region of the contact pads 102, 104 at least partially exposed (not shown). An ontact pad 102, 104 may be electrically and / or physically connected to an electrode 210, 214, for example by means of a connection layer 302. However, a contact pad 102, 104 may also be configured as a region of an electrode 210, 214 or a connection layer 302.

The contact pads 102, 104 may be a substance or a substance mixture similar to the second substance or substance mixture

Electrode 214 according to one of the embodiments of

Descriptions of Fig. 1 or be formed therefrom, for example as a metal layer structure with

at least one chromium layer and at least one

Aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr). Fig. A, b shows schematic views of a

 Overvoltage protection structure of an organic,

Optoelectronic component device according to

various embodiments. Fig. A shows a detail of a schematic

 Cross-sectional view of an embodiment of a

organic, optoelectronic device device 110 with surge arrester structure according to the description of Fig. Ib. Shown is another portion of the organic optoelectronic device device 300 according to one of the embodiments of the description of FIG.

Dargestell is a first electrically conductive portion

408 and a second electrically conductive portion 410 of the overvoltage protection structure 110 on or above the carrier 202 of the organic optoelectronic component device 300. The first electrically conductive section 408 can

For example, the anode 102 and the second electrically conductive portion 410 may be electrically connected to the cathode 104 of the organic optoelectronic device device 300, i. the first electrode 210 of the organic, optoelectronic component 106 is electrically connected to the anode 102 of the organic, optoelectronic component device, and the two electrodes 214 to the electrode 104 of the organic, optoelectronic

 Component device - shown as schematic

Equivalent circuit diagram in Fig b.

On or above the first electrically conductive portion 408 may be an electron-conducting layer 404 of the

 Overvoltage protection structure 108 may be formed

For example, be printed, sprayed or deposited. The electron-conducting layer 404 may include a

intrinsically electron-conducting substance or a mixture of carrier matrix and n-dopant.

On or above the electron-conducting layer 404, a hole-conducting layer 406 of the overvoltage protection structure 108 may be formed, for example printed, sprayed or deposited. The hole-conducting layer 406 may comprise an intrinsically hole-conducting substance or a mixture of carrier matrix and p-type dopant.

On or above the hole-conducting layer 406, a second electrical connection layer 402 may be formed,

For example, be printed, sprayed or abgeschi to be. The second electrical connection layer 402 may, for example, be similar or equal to the first electrode 210, the second electrode 214, the first electrical

Connecting layer 302, the first electrically conductive portion 408 or the second electrically conductive

Section 410 may be formed. The second electrical connection layer 402 may electrically connect to the second electrically conductive one 41 0.

be connected and electrically relative to the first

conductive portion 408 be electrically isolated

For example, by means of electrical insulation 412.

The electrical insulation 412, for example, similar to one of the embodiments of the electrical

Insulations 3 04 may be formed according to the description of FIG.

The protective diode 108 may be formed, for example, in the optically inactive region 3 14 of the organic, optoelectronic component device.

5a, b shows schematic views of a

 Overvoltage protection structure of an organic,

Optoelectronic component device according to

various Ausführungsbeispie] .en.

5a shows a section of a schematic

Cross-sectional view of an embodiment of a

organic, optoelectronic device device 12 0 with surge arrester structure according to the description of Fig. La. Darges ellt is another area of the organic, optoelectronic construction element device 3 00 according to one of the embodiments of the description of Figure 3. Shown is a first electrically conductive section 502 and a second electrically conductive section 504 of the overvoltage protection structure 100 on or above the carrier 202 of the organic, optoelectronic component device 300.

The first electrically conductive portion 502 may

for example, with the anode 102 of the organic, Optoelectronic component device 300 and the second electrically conductive portion 504 with the anode of

the first electrode 210 of the organic, optoelectronic component 106 is electrically connected to the cathode 504 of the protective diode and the second electrode 214 to the cathode 104 of the organic, optoelectronic component device 300 - shown as schematically. it equivalent circuit diagram in Figure 5b.

On or above the first electrically conductive section 502, a hole-conducting layer 406 of the overvoltage protection structure 108 may be formed, for example printed, sprayed or deposited. The hole-conducting layer 406 may be an intrinsically hole-conducting substance or a

 Substance mixture of carrier matrix and p-Dotierstof f have.

On or above the hole-guiding layer 406 may be a

elektronenle.itendo layer 404 of the overvoltage protection structure 108 may be formed, for example, be printed, sprayed or deposited. The electron-conducting layer 404 may comprise an intrinsically electron-conducting substance or a mixture of carrier matrix and n-dopant,

On or above the electron-conducting layer 404, a second electrical connection layer 02 may be formed, for example printed, sprayed or deposited. The second electrical connection layer 402 may, for example, be similar or equal to the first electrode 210, the second electrode 214, the first electrical one

Connecting layer 302, the first electrically conductive portion 408 or the second electrically conductive

Section 410 may be formed.

The second electrical connection layer 402 may be electrically connected to the second electrically conductive section 410 be connected and electrically relative to the first

1eitfähigen section 408 be electrically isolated

For example, by means of electrical insulation 412. The electrical insulation 412, for example, similar to one of the embodiments of the electrical

Isolations 304 may be formed according to the description of FIG. The protective diode 108 may be embodied, for example, in the optically inactive region 314 of the organic optoelectronic component device.

6a-c shows a region of organic,

Optoelectronic component device in the method for producing an overvoltage protection structure, according to

various embodiments.

Fig. Sa shows an electrically conductive layer structure 608 on or above the support 202 of the organic,

optoelectronic component device,

The carrier 202 may, for example, according to one of

Be designed embodiments of the description of Figure 2.

The electrically conductive layer structure 608 may

For example, layers or mixtures of one

electrically conductive metal oxide and / or a metal or be formed therefrom, for example, similar to the first electrode 210 and or the second elec- trode 214 one of the embodiments of the description of FIG.

A region 602 of the electrically conductive layer structure 608 may be removed from the carrier 202, that is, electrically insulated from one another

Sections 604, 606 are formed, for example by the carrier 202 in the area 602 is exposed - shown in Fig.6. The exposure of the carrier 202 can be carried out, for example, ballistically. A ballistic exposure of the

areas to be cleared can be detected, for example, by bombardment of the free area with particles, molecules,

Atoms, ions, electrons and / or photons can be realized.

A bombardment with photons can, for example, as

Laser ablation with a laser having a wavelength in a range of about 200 nm to about 1114 nm, for example focused, for example with a focus diameter in a range of about 10 microns to about 2000 microns, for example, pulsed, for example with a pulse duration in a range from about 100 fs to about 0.5 ms, for example with a power of about 50 mW to about 1000 mW, for example with a

 2

 Power density of about 100 kW / cm to about

 2

 10 GW / cm and, for example, with an epi tition rate in a range of about 100 Hz to about 1000 Hz,

In one exemplary embodiment, the electrically conductive layer structure 608 may be structured in such a way that the

Area 602 between the illustrated electrically conductive portions 604, 606 already a spark gap as

High-voltage protection structure for the electrically parallel connected organic optoelectronic device 106 is formed.

The area 602 between the electrically conductive

Sections 604, 606 may be in different

 From executives, however, also with a substance or

Substance mixture are at least partially filled,

for example, completely or crowded - shown in Fig.6c.

In various embodiments, the substance or mixture of substances between the electrically conductive Sections 604, 606 for forming a varistor 114 (see FIG. 7) or a spark gap 610.

In a spark gap 610, the first can be electrically

conductive portion 604 may be electrically connected to the first ontakt pad 102 of the organic optoelectronic device device 300 (not shown) and the second electrically conductive portion 606 may be connected to the second one

Contact pad 104 of the organic, optoelectronic

Device device 300 (not shown) such that the spark gap 610 is electrically parallel to the organic, optoelectronic device.

In various embodiments of the

Overvoltage protection structure ^' as a spark gap 610, the substance or the substance mixture in the region 602 between the electrically conductive portions 604, 606, a dielectric. The dielectric may for example be a gas, for example air, an electrically insulating, crosslinkable organic and / or inorganic compound, for example a

Epoxy resin, a silicone or a ceramic or even a

 Having or being formed of vacuum

The dielectric and parts of the electrically conductive

Sections 604, 606 may be surrounded by an encapsulation, wherein the encapsulation may be optional or comprise or may be formed from the same material as the dielectric, for example by over-filling the region 602.

The encapsulation may partially or completely surround the electrically conductive sections 604, 606; for example, the electrically conductive sections 60, 606 may be part of a cross-section of a support of an organic,

be optoelectronic component device (not shown). The encapsulation may, for example, be further

Have layers of the carrier. The dielectric

for example, in a cavity air or an epoxide

exhibit.

The encapsulation can serve as mechanical protection for the

electrically conductive portions 604, 606 of a

Spark gap 610 may be formed such that the distance between electrically 1eitfähigen sections 604, 606 and the shape of the surfaces of the electrically conductive portions

604, 606 with regard to external impacts, for example a shock, impact, fall or bending

Changes, such as an enlargement or

Reducing the distance or deforming the surface of the electrically conductive gene sections 604, 606 are protected.

In one embodiment, the encapsulation may be such

be set up that the dielectric, such as air, from environmental influences, such as changing the humidity and / or an irradiation of ionizing radiation, such as UV radiation or X-rays, is protected. These environmental influences could alter the necessary voltage which should be present across the electrically conductive sections 604, 606 in such a way that the formation of a spark gap is formed at a value of the applied voltage which is below the threshold voltage of the electronic component to be protected or above the breakdown voltage of shiny electronic

Component can be formed.

In one embodiment, the electrically conductive portions 604, 606 may have a lanate shape or have a tapered shape. For example, electrically conductive sections 604, 606 having planar shapes may be configured similar to a pin or similar to a planar plane. Electrically conductive sections 604, 606 with a

tapered shape can be formed, for example, similar to a tip or similar to a rounding. By means of the tapered shape, the necessary tension for the

Forming the spark gap can be reduced as the

tapered shapes locally may have a higher field strength than the planar shapes. However, the electrically conductive sections 604, 606 may also be partially or completely arbitrary, for example by means of roughness or coarse

Manufacturing process. In one embodiment, the electrically conductive

Sections 604, 606 have a complementary arrangement to each other, wherein the first electrically conductive portion 604 partially perpendicular and / or parallel to the second

electrically conductive portion 606 may be formed.

In one embodiment, the electrically conductive portions 60, 606 may have an overlapping arrangement, i. a staggered arrangement and / or

shifted arrangement of the electrically conductive portions 604, 606 to each other, wherein parts of the electrically conductive portions 604, 606 may be parallel to each other, for example, at a distance 602 from each other. The electrically conductive sections 604, 606 may also be in different planes, in the sense of a layer in the

Cross-sectional plane of the organic, optoelectronic

Component or drawing plane, be formed,

for example, similar to a cross.

In one embodiment, a parallel arrangement of the electrically conductive sections 604, 606 may be, for example, as a partially and / or completely concentric arrangement and / or coaxial arrangement of the electrically leitfand gene

 Sections 604, 606 be formed

In one embodiment, the electrically conductive portions 604, 606 may have a diverging arrangement, for example as a horn bow or as

Jakobsleite.

 The actual response voltage of the .Funkenstrecke for an organic, optoelectronic device device may be dependent on the specific configuration of the electrically conductive sections 604, 606, so that often a voltage range is specified, within which a

Spark gap between the electrically conductive portions 604, 606 can be formed at a certain distance. With the choice of the dielectric between the electrically conductive sections 604, 606, the response voltage of the spark gap can be changed at a constant distance.

The electrically conductive connections should be such

be set up that the value of the operating voltage of

Spark gap between the threshold voltage of the organic optoelectronic component and the breakdown voltage of the organic optoelectronic component is formed. A typical value for a floating voltage of an organic optoelectronic device may be formed in a range of about 0 V to about 5 V. A typical breakdown voltage can be for such

For example, the device may be formed in a range of about 170V to about 200V.

A Ausges age of the electrically conductive portions 60, 606 that meet these conditions, for example, have a distance 414 having a value of about 50 microns and ei dielectric having the air or formed therefrom. This embodiment has the advantage that

process technology, a distance of 50 microns can be easily made or executed. 7 shows a schematic plan view of a varistor, according to various application examples. The electrically conductive. Sections 604, 606 of

 The embodiment of the overvoltage protection structure in FIG. 6c can be implemented in the region 602 in various embodiments

 Embodiments be bridged by means of a varistor bridge 114 or a varistor 114.

Shown are a first electrically conductive portion 604 and a second electrically conductive portion 606 electrically connected to a varistor 610. Of the

Varistor 610 may include particles 704 of a material having

Have varistor properties in a support matrix

702 are embedded such that an electrically continuous connection 708 can be formed. At the interfaces 706 of the particles 704 with

 Varistor properties form an internal electric field that may resemble a semiconductor pn junction. The internal electric field can be transmitted via the electric field by means of an external electric field

Sections 604, 606 are dismantled. The inner ones

Electric fields can be formed over the interfaces 706 of particles 704 with varistor properties and be directed against the outer, applied electric field. At an applied voltage corresponding to the operating voltage of the varistor, the resistance of the varistor 610 may decrease, so that a current flow through a varistor 610 may be possible and the current above the response voltage may increase exponentially. Cause of the increase of the current above the response voltage may be by means of the applied voltage, the compensation of internal electric fields. The value of the response voltage may be determined by the number of coupled particle interfaces 706 in FIG

Current direction, ie the number of inner to be compensated Fields, and the material nature of the particles 704 dependent.

In other words: the value of the response voltage can vary from the length of the varistor 610 in the current direction, the size of the

Particles 704 with varistor properties and / or the

Material nature of the particles 704 dependent. The response voltage of a varistor 610 can with the

geometric dimension of the varistor 610, for example, the length parallel to the direction of current flow, and the size of the

 Particles 704 are adjusted with varistor characteristics with respect to the length of the varistor 610 in the current flow direction.

Upon reversal of current flow, i. Umpol ng the voltage across the varistor 610, the current-voltage characteristic with respect to any applied voltage (0V) can also

reverse in point symmetry.

The varistor should be designed such that the

Response voltage of the varistor is greater than that

Threshold voltage of the organic to be protected

optoelectronic component 106, in which it is conductive and smaller than the voltage at which the component to be protected is irreversibly damaged, for example, the breakdown voltage or an overvoltage in

 Passage direction. The threshold voltage of the organic, optoelectronic component 106 to be protected can

for example in a range from about 0.5 V to about 50 V, for example in a range from about 4 V to about 15 V, for example in one. Range from about 4V to about 8V.

At an applied voltage below the operating voltage of the varistor 610, a high resistance of the varistor 610, for example in a range of approximately 50 kΩ to approximately 50 μΩ, can be formed by means of existing internal fields at the particle interfaces Leakage, for example in a range of about

 0.1 μΑ to about 10 μΑ, allows.

The varistor should be designed such that the

Response voltage is smaller than the breakdown voltage of the organic to be protected, optoelectronic device 106 in the reverse direction, for example, a response of ZnO particles in a range of about 30 V to about 100 V or a response voltage in a range of about 100 V to about 200 V. of SiC particles.

The voltage drop across the varistor 610 may be at a response voltage in a range approximately equal to the

Breakdown voltage of the component to be protected

corresponds to be inadequate, for example, if in addition to the device to be protected despite varistor 610 nor a

Voltage greater than the breakdown voltage is applied,

For example, in the case of too low a rise in the current with applied voltage, for example in the case of the SiC varistor 610 between approximately 200 V and approximately 300 V.

The varistor 610 may be formed, for example, a carrier matrix of a one-component epoxy, a two-component epoxy, a silicone or an acrylate.

The epoxy resin in the moldable state may have a viscosity in a range of about 0.8 Pa * s to about 4 Pa * s. By solidifying the carrier matrix, the epoxy resin in the dimensionally stable state may have a viscosity in a range of about 2.5 GPa · s to about 3.0 GPa · s. The hardness of the dimensionally stable epoxy resin may have a Shore D hardness (20 ° C) in a range of about 87 to about 89.

The silicone may have a viscosity in the range of about 0.8 Pa · s to about 4 Pa · s in the moldable state exhibit . With els of solidifying the carrier matrix, the

Silicone in a dimensionally stable state, a modulus of elasticity in a range of about 1 MPa to about 6 MPa

exhibit. The hardness of the dimensionally stable silicone may have a Shore hardness (20 ° C) of about 40.

In a concrete embodiment can as a material with

Varistor 6lOperature SiC flakes (SiC flakes) with a diameter d $ Q of approximately 1.7 μm and a dgo of

about 4, 7 μιη used. The surface of the SiC

2

Flakes can have a value in a range of about 5 m / g

 2

to about 6 m / g.

The SiC flakes may be the support matrix, such as a silicone, a one-part epoxy or the

 Carrier component of a two-component epoxy, with respect to the mass of the composition of carrier matrix and SiC flakes in a mass fraction of about 20% to about 70% are added, for example in a range of

about 50% to about 60%.

The Stoffgenisch of carrier matrix and SiC flakes can as

Varistor paste be understood. The varistor paste may be dispensed to a varistor 610, for example, having a length in a range of about 200 μπα to about 300 μm; a width in a range of about 30 μm to about 60 μm, for example 50 μm; and a height in a range of about 5 μιη to about 50 μιη, for example 10 microns.

In the case of a two-part epoxy as the carrier matrix, the second component, i. of the

Hardener, be added before dispensing the Varistorpaste. In the moldable composition, the varistor paste may have a viscosity in a range of about 1 Pa · s to about 100 Pa · s. The solidification of the carrier matrix of the varistor 610 may be thermally formed, for example, in an epoxy support matrix on the leadframe with housing at a

Temperature value in a range of about 100 ° C to about 170 ° C, for example 150 ° C, for about 2

Hours to about 6 hours.

Alternatively, materials and layers within the organic optoelectronic device may be such

be structured such that they have, for example, the behavior of a varistor.

In various embodiments, an organic, optoelectronic Bauelemen evorrichtung and a method for producing an organic, optoelectronic

Device device provided with which it is possible to protect the organic, optoelectronic

Component before electrostatic discharge and / or

To realize reverse polarity, without an external

Overvoltage protection structure. An additional, external

Overvoltage protection structure to protect the OLED is not necessary because the OLED can protect itself,

for example, with respect to a polarity reversal of the OLED.

Furthermore, external overvoltage protection structures cause additional costs, for example, in the purchase,

 Storage and assembly. For the assembly of external overvoltage protection structure again, for example, a circuit board is needed. Since the overvoltage protection structure can be generated at least partially simultaneously, for example in the same processes, as the OLED, costs and production time can be saved.

Claims

claims 1. Organic, optoelectronic component device  (100, 110, 120, 130, 300), comprising:  a carrier {202};  an organic optoelectronic device (106) comprising a first electrode and a second one  Electrode; and  an overvoltage protection structure (108, 114, 610) comprising a first electrically conductive portion and a second electrically conductive portion;  Wherein the organic optoelectronic component (106) and the overvoltage protection element (108,  114, 610} are formed on or above the carrier (202);  Wherein the overvoltage protection structure (108, 114,  610) and the organic optoelectronic component (106) have at least one common layer; and  Wherein the overvoltage protection structure (108, 114,  610) electrically with the organic,  optoelectronic component (106) is connected; Wherein the first electrically conductive portion is a portion of the first electrode and / or the second electrically conductive portion is a portion of the second electrode; and  Wherein the overvoltage protection structure (108, 114,  610) has a spark gap. 2. An organic, optoelectronic component device (100, 110, 120, 130, 300) according to claim 1,  wherein the organic, optoelectronic component (106) is formed as an organic light emitting diode (106) or an organic solar cell (106). Organic, opto-electronic device features «  (100, 110, 120, 130, 300) according to any of the claims  OCIG "2,  wherein the overvoltage protection structure (108, 114,  610} electrically parallel to the organic,  optoelectronic component (106) formed  is. Organic, optoelectronic component device (100, 110, 120, 130, 300) according to one of claims 1 to 3,  wherein the common layer at least one  Electrode (210, 214) of the organic,  optoelectronic component (106) and  at least one electrically conductive portion of the surge arrester structure (408, 410, 502,  504, 604, 608) or is electrically connected thereto. Organic, optoelectronic component device  (100, 110, 120, 130, 300) according to one of claims 1 to 4,  wherein the organic, optoelectronic  Device device (100, 110, 120, 130, 300)  an optically active region (312) and a  optically inactive region (314), wherein the overvoltage protection structure (108, 114, 610) is formed in the optically inactive region (314). Process for producing an organic, optoelectronic component device (100, 110, 120, 130, 300), the method comprising: Forming an organic, optoelectronic Device (106) comprising a first electrode and a second electrode, and an overvoltage protection device Structure (108, 114, 610) comprising a first one electrically conductive section and a second electrically conductive portion, on or above a support (202);  • wherein the overvoltage protection structure {108, 114, 610) and the organic, optoelectronic  Component (106) have at least one common layer;  Wherein the overvoltage protection structure (108, 114, 610) is electrically connected to the. organic,  optoelectronic component (106) is connected; Wherein the first electrically capable portion is a portion of the first electrode and / or the second electrically conductive portion is a portion of the second electrode; and  • wherein the overvoltage protection structure (108, 114, 610} has a spark gap. Method according to claim 6,  wherein the common layer is structured. Method according to claim 7,  wherein the common layer is patterned by means of a laser. Method according to one of claims 6 to 8,  wherein the overvoltage protection structure (108, 114,  610) as a structured region of the  organic, optoelectronic component (106) is formed.