[go: up one dir, main page]

WO2013108533A1 - Composant électronique en céramique - Google Patents

Composant électronique en céramique Download PDF

Info

Publication number
WO2013108533A1
WO2013108533A1 PCT/JP2012/082787 JP2012082787W WO2013108533A1 WO 2013108533 A1 WO2013108533 A1 WO 2013108533A1 JP 2012082787 W JP2012082787 W JP 2012082787W WO 2013108533 A1 WO2013108533 A1 WO 2013108533A1
Authority
WO
WIPO (PCT)
Prior art keywords
glass
component
external electrode
edge
ceramic electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/082787
Other languages
English (en)
Japanese (ja)
Inventor
誠史 古賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of WO2013108533A1 publication Critical patent/WO2013108533A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors

Definitions

  • the present invention relates to a ceramic electronic component, and more particularly, to a ceramic electronic component in which a plating film by wet plating is formed on an external electrode.
  • wet plating such as electrolytic plating is usually applied to an external electrode formed by baking.
  • an external electrode formed by baking For example, a Ni plating film and an Sn plating film thereon are external electrodes.
  • the plating solution used in carrying out wet plating as described above has a more or less undesirable effect on ceramic electronic components such as multilayer ceramic capacitors.
  • the multilayer ceramic capacitor 1 includes a rectangular parallelepiped component body 2. External electrodes 3 and 4 are formed on a pair of opposed end faces of the component body 2, respectively. The external electrodes 3 and 4 have respective end edges 5 and 6 located on a pair of main surfaces 7 and 8 facing each other and a pair of side surfaces 9 and 10 facing each other.
  • plating films 11 and 12 are formed on the external electrodes 3 and 4 by wet plating.
  • FIG. 9 shows a state before the plating films 11 and 12 are formed.
  • the crack generation mode was different before and after plating. That is, before plating, as shown in FIG. 9, the crack 13 is likely to occur so as to cross the central portion of the component body 2. On the other hand, after plating, as shown in FIG. 10, the crack 14 is likely to occur in the component body 2 starting from the portion where the edges 5 and / or 6 of the external electrodes 3 and / or 4 are located.
  • the plating solution severely deteriorates the component main body 2 particularly in the portion where the edges 5 and 6 of the external electrodes 3 and 4 are located.
  • the glass component contained in the conductive paste for forming the external electrodes 3 and 4 permeates into the ceramic portion of the component body 2 in the baking process.
  • the glass component located in the vicinity of the edges 5 and 6 of the external electrodes 3 and 4 that are easy to touch is melted by the plating solution, so that the component body 2 is in the vicinity of the edges 5 and 6 of the external electrodes 3 and 4. It can be inferred that it is caused by erosion and fragility.
  • Patent Document 1 discloses a multilayer ceramic electronic component in which the entire exposed surface of a ceramic body is covered with glass to prevent the penetration of a plating solution into the inside of the body. Is described. However, since the glass described in Patent Document 1 can be dissolved in the plating solution, the above-described problems caused by the melting of the glass cannot be solved.
  • Patent Document 2 Although not an external electrode formed by baking, by applying a water repellent treatment agent to the edge of the external electrode formed by plating, A method of manufacturing a multilayer electronic component that prevents intrusion is described. However, since the external electrode described in Patent Document 2 is formed by plating, it does not contain glass. Therefore, the problem that the glass as described above is melted by the plating solution is not encountered.
  • Patent Document 3 a conductive paste used for forming a terminal electrode of a multilayer ceramic electronic component having excellent plating solution resistance, particularly a glass powder contained in the conductive paste.
  • the ingredients are listed.
  • the glass described in Patent Document 3 can be dissolved in the plating solution as in the case of the glass described in Patent Document 1, the above-described problem caused by melting of the glass cannot be solved.
  • the above problem is not limited to multilayer ceramic electronic components, but can also be applied to single-layer ceramic electronic components.
  • an object of the present invention is to provide a multilayer ceramic electronic component that can solve the above-described problems.
  • the present invention includes a substantially rectangular parallelepiped-shaped main body having a pair of principal surfaces opposed to each other, a pair of side surfaces opposed to each other, and a pair of end surfaces opposed to each other, and a glass component.
  • An external electrode formed by baking of a conductive paste, and formed on an end face of a component main body and having an end edge located on at least one of a main surface and a side surface adjacent to the end face; In order to solve the above technical problem, at least an edge of the external electrode is provided on the surface of the component body. In the vicinity thereof, a glass region in which a glass containing silicon oxide of 23 mol% or more and 74 mol% or less exists is formed.
  • the distance from the edge position of the external electrode to the edge of the glass region measured is not more than the distance from the end surface of the component body to the edge of the external electrode.
  • the glass region is formed by applying and baking a glass paste in which a glass frit containing silicon oxide is dispersed in a region adjacent to an end surface on at least one of the main surface and the side surface of the component body.
  • the edge of the external electrode is positioned so as to expose the edge of the glass layer.
  • the distance from the end surface of the component body to the edge of the glass layer is preferably in the range of 1/4 to 1/2 times the distance between the pair of end surfaces of the component body.
  • the glass region is a glass containing conductive metal powder and silicon oxide to form part of the external electrode in a region adjacent to the end face on at least one of the main surface and the side surface of the component body.
  • a conductive paste containing frit it is provided by the glass component that exudes from the conductive paste.
  • the distance from the edge position of the external electrode to the edge of the glass region measured may be in the range of 1/10 to 1 times the distance from the end surface of the component body to the edge of the external electrode. preferable.
  • the present invention includes a component main body including a plurality of laminated ceramic layers and an internal electrode disposed along an interface between the ceramic layers, and an end of the internal electrode is exposed at the end face,
  • the present invention is advantageously applied to a multilayer ceramic electronic component connected to the end of the internal electrode exposed at the end face of the component body.
  • the glass region where the glass that is difficult to dissolve in the plating solution is formed in the vicinity of the edge of the external electrode. It is suppressed. Therefore, the generation of cracks starting from the portion where the edge of the external electrode is located as described above with reference to FIG. 10 can be advantageously suppressed. Therefore, the mechanical strength of the ceramic electronic component can be increased.
  • FIG. 1 is a cross-sectional view showing a multilayer ceramic capacitor 21 according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view for explaining a method of forming an external electrode of the multilayer ceramic capacitor 21 shown in FIG. 1 and shows a state in which glass layers 40 and 41 are formed.
  • FIG. 3 is a cross-sectional view for explaining a method for forming an external electrode of the multilayer ceramic capacitor 21 shown in FIG. 1 and shows a state in which external electrodes 32 and 33 are formed after the stage shown in FIG. 2. It is sectional drawing which shows the multilayer ceramic capacitor 51 by 2nd Embodiment of this invention.
  • FIG. 5 is a cross-sectional view for explaining a method of forming an external electrode of the multilayer ceramic capacitor 51 shown in FIG.
  • FIG. 6 is a cross-sectional view for explaining a method for forming an external electrode of the multilayer ceramic capacitor 51 shown in FIG. 4, after applying a conductive paste on the end faces 30 and 31 of the component body 22 after the stage shown in FIG. 5; Furthermore, the state after implementing a baking process is shown. It is a top view of the structure in the state shown in FIG. It is a figure which shows the density
  • FIG. 1 is a plan view illustrating a state in which a crack 13 is formed in a multilayer ceramic capacitor 1 before plating in order to explain a problem to be solved by the present invention.
  • BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view illustrating a state in which cracks 14 are formed in a multilayer ceramic capacitor 1 after plating in order to explain a problem to be solved by the present invention.
  • a multilayer ceramic capacitor 21 includes a component body 22 having a multilayer structure.
  • the component body 22 includes a plurality of laminated ceramic layers 23 and a plurality of first and second internal electrodes 24 and 25 arranged along an interface between the ceramic layers 23.
  • the first internal electrode 24 and the second internal electrode 25 are opposed to each other in a part of each, and are alternately arranged as viewed in the stacking direction.
  • the internal electrodes 24 and 25 are mainly composed of nickel, for example.
  • the component body 22 includes first and second main surfaces 26 and 27 facing each other, first and second side surfaces facing each other (a surface parallel to a paper surface not shown), and first and second end surfaces facing each other. It has a substantially rectangular parallelepiped shape with 30 and 31.
  • the end portions of the first and second internal electrodes 24 and 25 are exposed at the first and second end faces 30 and 31 of the component main body 22, respectively.
  • the first and second end surfaces 30 and 31 of the component body 22 are electrically connected to the end portions of the first and second internal electrodes 24 and 25, respectively.
  • External electrodes 32 and 33 are formed.
  • the first and second external electrodes 32 and 33 have respective end edges 34 and 35 positioned on the main surfaces 26 and 27 adjacent to the end surfaces 30 and 31, and in this embodiment, although not shown in the figure. It is also located on the side.
  • External electrodes 32 and 33 are formed, for example, by baking a conductive paste mainly composed of copper.
  • Plated films 36 and 37 are formed on the external electrodes 32 and 33, respectively.
  • the plating films 36 and 37 are composed of, for example, a plating layer mainly containing nickel and a plating layer mainly containing tin formed thereon.
  • the present invention includes at least 23 mol% and not more than 74 mol% of silicon oxide on the surface of the component body 22 and at least from the edges 34 and 35 of the external electrodes 32 and 33 to the vicinity thereof. Glass regions 38 and 39 in which glass is present are formed.
  • the glass regions 38 and 39 are provided by glass layers 40 and 41 made of glass containing 23 mol% or more and 74 mol% or less of silicon oxide.
  • the glass layers 40 and 41 are formed along the interfaces between the main surfaces 26 and 27 and the side surfaces of the component body 22 and the external electrodes 32 and 33.
  • a distance A from each position of the edges 34 and 35 of the external electrodes 32 and 33 to each edge 42 and 43 of the glass layers 40 and 41 is determined from each of the end faces 30 and 31 of the component body 22 to the external electrode.
  • the distance B to the end edges 34 and 35 of each of 32 and 33 is preferably equal to or less than B.
  • the component body 22 is prepared.
  • a ceramic green sheet containing a dielectric ceramic material is prepared, and then a conductive paste film to be the internal electrodes 24 and 25 is formed on the ceramic green sheet with a predetermined pattern.
  • a raw mother block is obtained, and then the mother block is cut to obtain an individual multilayer ceramic capacitor 21. It is obtained by obtaining a plurality of raw component bodies and then firing the raw component bodies.
  • External electrodes 32 and 33 are formed on the component main body 22 obtained as described above.
  • glass layers 40 and 41 are formed as shown in FIG.
  • a glass paste is applied to the regions adjacent to the end surfaces 30 and 31 on the main surfaces 26 and 27 and the side surfaces of the component body 22 and baked.
  • the glass paste is obtained by dispersing glass frit containing silicon oxide in a varnish obtained by dissolving an organic binder in an organic solvent.
  • the glass layers 40 and 41 are made of glass containing 23 mol% or more and 74 mol% or less of silicon oxide. Therefore, the glass constituting the glass frit contained in the glass paste described above has a composition that gives glass containing silicon oxide of 23 mol% or more and 74 mol% or less in the glass layers 40 and 41 obtained by baking. Have.
  • the glass constituting the glass frit contained in the glass paste is, for example, Si—B—Zn-based
  • a part of zinc oxide, which is a glass component is sublimated in the baking process, and thus obtained by baking.
  • the ratio of silicon oxide in the glass layers 40 and 41 is higher than the ratio of silicon oxide contained in the glass contained in the glass paste. Therefore, considering this, the composition of the glass contained in the glass paste should be determined.
  • the distance C from each of the end faces 30 and 31 of the component body 22 to the respective edges 42 and 43 of the glass layers 40 and 41 is between the pair of end faces 30 and 31 of the component body 22.
  • the distance L is preferably in the range of 1/4 to 1/2 times the distance L.
  • external electrodes 32 and 33 are formed by baking a conductive paste.
  • the conductive paste used here contains, for example, conductive metal powder such as Cu powder, glass frit, and varnish, and the content ratio of silicon oxide in the glass frit can be arbitrarily selected.
  • the edges 34 and 35 of the external electrodes 32 and 33 are located so as to expose the edges 42 and 43 of the glass layers 40 and 41, respectively.
  • the plating films 36 and 37 are formed on the external electrodes 32 and 33 by performing wet plating such as electrolytic plating. Since the glass constituting the glass layers 40 and 41 is not easily dissolved in the plating solution used in this plating process, the component main body 22 is eroded in the vicinity of the edges 34 and 35 of the external electrodes 32 and 33 in the plating process. And being vulnerable. Therefore, it is possible to advantageously suppress the occurrence of cracks starting from the portions where the edges 34 and 35 of the external electrodes 32 and 33 are located, and as a result, the mechanical strength of the multilayer ceramic capacitor 21 can be increased.
  • wet plating such as electrolytic plating.
  • Example 1 Production of component main body A plurality of ceramic green sheets containing ceramic material powders mainly composed of Ba and Ti were prepared. Next, on the ceramic green sheet, a conductive paste containing Ni as a main component was applied by screen printing to form a conductive paste film to be an internal electrode.
  • the ceramic green sheets on which the conductive paste film is not formed are stacked so as to have a predetermined outer layer thickness, and then a predetermined number of ceramic green sheets on which the conductive paste film is formed are stacked.
  • a green mother block in which a plurality of component main bodies can be taken out was obtained by laminating ceramic green sheets having no paste formed so as to have a predetermined outer layer thickness.
  • the mother block was cut, a plurality of chip-shaped raw component bodies were taken out, and then the raw component bodies were fired in a reducing furnace in a reducing atmosphere to obtain a sintered component body.
  • the above glass paste was printed on the main surface and the side surface of the component body adjacent to the end surface.
  • the above glass paste was baked by heat treatment at 900 ° C. for 10 minutes in a nitrogen atmosphere to form a glass layer.
  • the distance C shown in FIG. 2 is set to be in a range of 1 ⁇ 4 to 1 ⁇ 2 times the distance L.
  • a film made of the conductive paste for external electrodes is formed with a predetermined thickness on the surface plate, and after immersing the end of the component main body held by the holder in the conductive paste film, By taking out from the conductive paste film, a conductive paste to be an external electrode was applied to both end faces of the component main body. At this time, the position of the edge of the conductive paste film serving as the external electrode was adjusted so that the edge of the glass layer was exposed.
  • the component body was heat-treated in a belt furnace.
  • the condition of holding the maximum temperature in the range of 900 ° C. for 10 minutes was adopted.
  • a reducing atmosphere was applied to prevent oxidation of the external electrode.
  • Ni electrolytic plating and Sn electrolytic plating were sequentially applied to the external electrode to form a plating film on the external electrode.
  • a multilayer ceramic capacitor serving as a sample was obtained as described above.
  • the glass layer is subjected to point analysis by XRF in the vicinity of the edge of the external electrode, thereby qualitatively and quantitatively determining the elements present there. analyzed.
  • elements excluding Ba and Ti that are components of the ceramic layer, Cu that is a component of the external electrode, and Ni and Sn that are components of the plating film are used as the ends of the external electrode.
  • the element of the glass component in the vicinity of the edge was converted into an oxide, and the “amount of silicon oxide in the glass layer” in Table 1 was quantified.
  • the baking temperature of the glass paste for forming the glass layer is increased to 1000 ° C.
  • the denseness of the glass layer is improved.
  • damage to the component body is large, and electrical characteristics are increased. Has been confirmed to decrease.
  • FIG. 4 is a view corresponding to FIG. 1 and shows a multilayer ceramic capacitor 51 according to a second embodiment of the present invention.
  • a multilayer ceramic capacitor 51 includes a component body 22 that is substantially similar to the component body 22 provided in the multilayer ceramic capacitor 21 shown in FIG. Therefore, in FIG. 4, elements corresponding to those shown in FIG.
  • the first and second end surfaces 30 and 31 of the component body 22 are electrically connected to the end portions of the first and second internal electrodes 24 and 25, respectively.
  • External electrodes 52 and 53 are formed.
  • the first and second external electrodes 52 and 53 have respective end edges 54 and 55 located on the main surfaces 26 and 27 adjacent to the end surfaces 30 and 31 and on the side surfaces.
  • External electrodes 52 and 53 are formed, for example, by baking a conductive paste mainly composed of copper.
  • the external electrodes 52 and 53 are arranged on the main surfaces 56 and 57 located on the end faces 30 and 31 of the component main body 22 and on the main surfaces 26 and 27 and the side surfaces of the component main body 22 depending on the silicon oxide content. 28 and 29 (see FIG. 7) are classified into adjacent surface extensions 58 and 59. Broadly speaking, the conductive paste used to form the adjacent surface extensions 58 and 59 has a relatively high silicon oxide content.
  • Plated films 36 and 37 are formed on the external electrodes 32 and 33, respectively.
  • the plating films 36 and 37 are substantially the same as the plating films 36 and 37 in the multilayer ceramic capacitor 21 shown in FIG.
  • Glass regions 60 and 61 in which the following glass containing silicon oxide is present are formed.
  • the glass regions 60 and 61 are provided by glass components that have exuded from the conductive paste by baking the conductive paste applied to form the adjacent surface extensions 58 and 59 described above. .
  • the component body 22 is prepared.
  • the conductive paste for forming the external electrodes 52 and 53 the conductive paste for the main portions 56 and 57 and the conductive paste for the adjacent surface extension portions 58 and 59 are prepared.
  • Each of the conductive pastes contains conductive metal powder, glass frit, and varnish, but particularly the conductive paste for the adjacent surface extension portions 58 and 59 is 23 mol% or more and 74 mol as described above.
  • the glass regions 60 and 61 in which glass containing less than 1% of silicon oxide is present are selected so as to be formed by the glass component exuded from the conductive paste.
  • the conductive paste for the adjacent surface extensions 58 and 59 is formed on the main surfaces 26 and 27 and the side surfaces 28 and 29 of the component body 22 in the region adjacent to the end surfaces 30 and 31.
  • conductive paste films 62 and 63 to be adjacent surface extensions 58 and 59 are formed.
  • a conductive paste for the main portions 56 and 57 is applied on the end faces 30 and 31 of the component body 22, thereby forming a conductive paste film to be the main portions 56 and 57.
  • external electrodes 52 and 53 comprising sintered adjacent surface extensions 58 and 59 and main portions 56 and 57 are formed.
  • the glass components ooze out from the adjacent surface extension portions 58 and 59, whereby glass regions 60 and 61 in which glass containing silicon oxide of 23 mol% or more and 74 mol% or less exists are provided. And formed on the surface of the component body 22 from at least the end edges 54 and 55 of the external electrodes 52 and 53 to the vicinity thereof.
  • the glass contained in the conductive paste for forming the adjacent surface extension portions 58 and 59 is, for example, Si—B—Zn-based
  • the baking step Since a part of zinc oxide which is a glass component is sublimated, the ratio of silicon oxide in the glass regions 60 and 61 formed as a result of baking is higher than the ratio of silicon oxide contained in the glass in the conductive paste. Therefore, in consideration of this, the composition of the glass contained in the conductive paste should be determined.
  • the distance D from the positions of the edges 54 and 55 of the external electrodes 52 and 53 to the edges 64 and 65 of the glass regions 60 and 61 is determined by the end face 30 of the component body 22. And 31 to the end edges 54 and 55 of each of the external electrodes 52 and 53 are preferably in the range of 1/10 to 1 times the distance E.
  • the glass regions 60 and 61 are formed by the glass component exuded from the conductive paste, it is relatively difficult to visually determine the positions of the edges 64 and 65. is there. Therefore, in order to obtain the positions of the edges 64 and 65 of the glass regions 60 and 61, the following method is employed.
  • FIG. 7 shows a plan view of the structure in the state shown in FIG.
  • the Si concentration distribution is obtained by performing XRF line analysis along the line 66 shown in FIG. 7, an analysis result as shown in FIG. 8 is obtained.
  • the length of the glass seepage that is, the distance D between the “edge of the external electrode” and the “edge of the glass region” can be obtained.
  • the order of applying the conductive paste for the main portions 56 and 57 and the step of applying the conductive paste for the adjacent surface extension portions 58 and 59 are reversed. May be.
  • the plating films 36 and 37 are formed on the external electrodes 52 and 53 by performing wet plating such as electrolytic plating. Since the glass existing in the glass regions 60 and 61 is not easily dissolved in the plating solution used in this plating process, the component main body 22 is eroded in the vicinity of the edges 54 and 55 of the external electrodes 52 and 53 in the plating process. And being vulnerable. Therefore, it is possible to advantageously suppress the occurrence of cracks starting from the portions where the edges 54 and 55 of the external electrodes 52 and 53 are located, and as a result, the mechanical strength of the multilayer ceramic capacitor 21 can be increased.
  • wet plating such as electrolytic plating.
  • the spread of the glass region is obtained by performing a line analysis with XRF along the line 66 shown in FIG. 7 to obtain a Si concentration distribution and obtaining an analysis result as shown in FIG. It can be obtained by observing the Si concentration gradient shown in FIG.
  • the distance D (see FIG. 6) from the position of the edge of the external electrode to the edge of the glass region measured is the distance from the end surface of the component body to the edge of the external electrode. It was confirmed that it was in the range of 1/10 to 1 times E (see FIG. 6).
  • a multilayer ceramic capacitor serving as a sample was obtained as described above.
  • the ceramic layer 23 is made of a dielectric ceramic.
  • the multilayer ceramic electronic component to which the present invention is applied may be an inductor, a thermistor, a piezoelectric component, or the like. Therefore, according to the function of the multilayer ceramic electronic component, the ceramic layer may be composed of a dielectric ceramic, a magnetic ceramic, a semiconductor ceramic, a piezoelectric ceramic, or the like.
  • the illustrated multilayer ceramic capacitor 21 or 51 is of a two-terminal type including two external electrodes 32 and 33 or two external electrodes 52 and 53.
  • the present invention is a multi-terminal multilayer ceramic electronic device. It can also be applied to parts.
  • the present invention can be applied not only to multilayer ceramic electronic components but also to single-layer type ceramic electronic components.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
PCT/JP2012/082787 2012-01-19 2012-12-18 Composant électronique en céramique Ceased WO2013108533A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-008550 2012-01-19
JP2012008550 2012-01-19

Publications (1)

Publication Number Publication Date
WO2013108533A1 true WO2013108533A1 (fr) 2013-07-25

Family

ID=48798970

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/082787 Ceased WO2013108533A1 (fr) 2012-01-19 2012-12-18 Composant électronique en céramique

Country Status (1)

Country Link
WO (1) WO2013108533A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017022365A (ja) * 2015-07-14 2017-01-26 株式会社村田製作所 積層セラミックコンデンサ
JP2018182107A (ja) * 2017-04-14 2018-11-15 太陽誘電株式会社 積層セラミックコンデンサおよびその製造方法
JPWO2018061461A1 (ja) * 2016-09-30 2019-03-14 株式会社村田製作所 電子部品および電子部品の製造方法
CN109545551A (zh) * 2017-09-21 2019-03-29 太阳诱电株式会社 陶瓷电子器件和陶瓷电子器件的制造方法
US11361901B2 (en) * 2019-06-07 2022-06-14 Murata Manufacturing Co., Ltd. Multilayer ceramic electronic component with glass component, plating layer, and semiconductor layer
CN115036136A (zh) * 2021-03-08 2022-09-09 Tdk株式会社 陶瓷电子部件
US20230377804A1 (en) * 2021-02-24 2023-11-23 Murata Manufacturing Co., Ltd. Multilayer ceramic capacitor
US20240071688A1 (en) * 2022-08-25 2024-02-29 Taiyo Yuden Co., Ltd. Multilayer ceramic electronic device
WO2025126975A1 (fr) * 2023-12-13 2025-06-19 太陽誘電株式会社 Composant électronique en céramique multicouche et son procédé de fabrication

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0955118A (ja) * 1995-08-11 1997-02-25 Tdk Corp 導体ペーストおよびセラミック積層コンデンサ
JP2001122639A (ja) * 1999-10-21 2001-05-08 Tdk Corp ガラスフリットおよび導体ペースト組成物ならびに積層コンデンサ
JP2001122680A (ja) * 1999-10-26 2001-05-08 Sumitomo Metal Mining Co Ltd ガラスセラミック基板およびその製造方法
JP2001274035A (ja) * 2000-03-28 2001-10-05 Murata Mfg Co Ltd 積層セラミックコンデンサ用導電性ペーストならびにこれを用いた積層セラミックコンデンサ
JP2011204778A (ja) * 2010-03-24 2011-10-13 Murata Mfg Co Ltd 積層セラミック電子部品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0955118A (ja) * 1995-08-11 1997-02-25 Tdk Corp 導体ペーストおよびセラミック積層コンデンサ
JP2001122639A (ja) * 1999-10-21 2001-05-08 Tdk Corp ガラスフリットおよび導体ペースト組成物ならびに積層コンデンサ
JP2001122680A (ja) * 1999-10-26 2001-05-08 Sumitomo Metal Mining Co Ltd ガラスセラミック基板およびその製造方法
JP2001274035A (ja) * 2000-03-28 2001-10-05 Murata Mfg Co Ltd 積層セラミックコンデンサ用導電性ペーストならびにこれを用いた積層セラミックコンデンサ
JP2011204778A (ja) * 2010-03-24 2011-10-13 Murata Mfg Co Ltd 積層セラミック電子部品の製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017022365A (ja) * 2015-07-14 2017-01-26 株式会社村田製作所 積層セラミックコンデンサ
JPWO2018061461A1 (ja) * 2016-09-30 2019-03-14 株式会社村田製作所 電子部品および電子部品の製造方法
JP7122085B2 (ja) 2017-04-14 2022-08-19 太陽誘電株式会社 積層セラミックコンデンサおよびその製造方法
JP2018182107A (ja) * 2017-04-14 2018-11-15 太陽誘電株式会社 積層セラミックコンデンサおよびその製造方法
CN109545551B (zh) * 2017-09-21 2022-08-30 太阳诱电株式会社 陶瓷电子器件和陶瓷电子器件的制造方法
CN109545551A (zh) * 2017-09-21 2019-03-29 太阳诱电株式会社 陶瓷电子器件和陶瓷电子器件的制造方法
US11361901B2 (en) * 2019-06-07 2022-06-14 Murata Manufacturing Co., Ltd. Multilayer ceramic electronic component with glass component, plating layer, and semiconductor layer
US20230377804A1 (en) * 2021-02-24 2023-11-23 Murata Manufacturing Co., Ltd. Multilayer ceramic capacitor
US12165812B2 (en) * 2021-02-24 2024-12-10 Murata Manufacturing Co., Ltd. Multilayer ceramic capacitor
CN115036136A (zh) * 2021-03-08 2022-09-09 Tdk株式会社 陶瓷电子部件
CN115036136B (zh) * 2021-03-08 2023-06-27 Tdk株式会社 陶瓷电子部件
US20240071688A1 (en) * 2022-08-25 2024-02-29 Taiyo Yuden Co., Ltd. Multilayer ceramic electronic device
US12354804B2 (en) * 2022-08-25 2025-07-08 Taiyo Yuden Co., Ltd. Multilayer ceramic electronic device
WO2025126975A1 (fr) * 2023-12-13 2025-06-19 太陽誘電株式会社 Composant électronique en céramique multicouche et son procédé de fabrication

Similar Documents

Publication Publication Date Title
WO2013108533A1 (fr) Composant électronique en céramique
JP6679964B2 (ja) 積層セラミックコンデンサ
JP5271377B2 (ja) 積層セラミックコンデンサ
JP5313289B2 (ja) 積層セラミックコンデンサ
US9978519B2 (en) Multilayer ceramic electronic component
US9328014B2 (en) Ceramic electronic component and glass paste
US10395838B2 (en) Multilayer ceramic electronic component including an organic layer
JP6020503B2 (ja) 積層セラミック電子部品
US9667174B2 (en) Ceramic electronic component
JP5954435B2 (ja) 積層セラミック電子部品
KR101397835B1 (ko) 적층 세라믹 전자부품 및 이의 제조방법
JP6020502B2 (ja) 積層セラミック電子部品
JP2015035581A (ja) セラミック電子部品およびその製造方法
JP2012059742A (ja) 積層セラミックコンデンサ
KR101688200B1 (ko) 적층 세라믹 전자부품 및 그 제조방법
JP6075460B2 (ja) 積層セラミック電子部品
JP2018060875A (ja) 積層セラミックコンデンサおよびその製造方法
CN105556626B (zh) 层叠陶瓷电子部件
KR20230097508A (ko) 적층형 전자 부품
JP5668429B2 (ja) 積層セラミック電子部品
JP2023098638A (ja) 積層セラミックキャパシタ及びその製造方法
JP2023099276A (ja) 積層型電子部品
JP2015043424A (ja) 積層セラミックコンデンサ
JP2015043446A (ja) 積層セラミックコンデンサ
JP2023099272A (ja) 積層型電子部品

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12865552

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12865552

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP