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WO2013031906A1 - Dispositif de conversion photoélectrique et procédé de fabrication dudit dispositif - Google Patents

Dispositif de conversion photoélectrique et procédé de fabrication dudit dispositif Download PDF

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Publication number
WO2013031906A1
WO2013031906A1 PCT/JP2012/072041 JP2012072041W WO2013031906A1 WO 2013031906 A1 WO2013031906 A1 WO 2013031906A1 JP 2012072041 W JP2012072041 W JP 2012072041W WO 2013031906 A1 WO2013031906 A1 WO 2013031906A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
layer
semiconductor layer
based semiconductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/072041
Other languages
English (en)
Japanese (ja)
Inventor
弘 松原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2013531403A priority Critical patent/JP5770294B2/ja
Publication of WO2013031906A1 publication Critical patent/WO2013031906A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the substrate 11 is a translucent insulating substrate made of a translucent material.
  • the substrate 11 is preferably made of, for example, a resin such as glass or polyimide, and has heat resistance and translucency in the semiconductor layer formation step by the plasma CVD method.
  • the 1st electrode 12 is comprised with the material which has translucency.
  • the first electrode 12 can be made of, for example, SnO 2 , indium tin oxide (ITO), or the like.
  • the thickness and shape of the substrate 11 and the first electrode 12 are not particularly limited.
  • the photoelectric conversion device 100 has a superstrate type configuration, but can also be applied to a substrate type configuration.
  • the substrate type configuration the substrate 11 formed on the first electrode 12 side is formed on the second electrode 16 side in the super straight type photoelectric conversion device 100 shown in FIG.
  • An insulating substrate is used.
  • the configurations of the first electrode 12 and the second electrode 16 can be selected as appropriate, but the first electrode 12 on the light incident side is configured in a grid shape that does not uniformly cover the p-type silicon-based semiconductor layer 13. .
  • the effect of the present invention can be obtained in the same manner as the super straight type photoelectric conversion device.
  • the power density per unit area of the cathode electrode 3 was 0.05 W / cm 2 .
  • the film thickness of the n-type amorphous silicon layer 15b was set to 9 nm, 8 nm, and 5 nm, respectively, for Examples 1 to 3.
  • the n-type amorphous silicon oxide layer 15a so as to be in contact with the i-type silicon-based semiconductor layer, the same as the single-layer photoelectric conversion devices of Examples 1 to 6. Further, it has been found that the open circuit voltage and the fill factor can be improved and the photoelectric conversion efficiency can be improved.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un dispositif de conversion photoélectrique dans lequel une première électrode, une première couche de conversion photoélectrique et une seconde électrode sont stratifiées séquentiellement dans l'ordre ci-dessus. La première couche de conversion photoélectrique comprend une couche semi-conductrice de silicium de type p, une couche semi-conductrice de silicium de type i qui est formée d'un semi-conducteur de silicium semi-cristallin, et une couche semi-conductrice de silicium de type n qui contient du phosphore et de l'oxygène, lesdites couches semi-conductrices de silicium étant stratifiées séquentiellement à partir du côté de la première électrode vers le côté de la seconde électrode. La couche semi-conductrice de silicium de type n présente une seconde partie dans laquelle la concentration en oxygène est maximale, au même emplacement qu'une première partie dans laquelle la concentration en phosphore est maximale, dans le sens de l'épaisseur ou en un emplacement plus proche de la couche semi-conductrice de type i que ne l'est la première partie.
PCT/JP2012/072041 2011-09-01 2012-08-30 Dispositif de conversion photoélectrique et procédé de fabrication dudit dispositif Ceased WO2013031906A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013531403A JP5770294B2 (ja) 2011-09-01 2012-08-30 光電変換装置およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011190604 2011-09-01
JP2011-190604 2011-09-01

Publications (1)

Publication Number Publication Date
WO2013031906A1 true WO2013031906A1 (fr) 2013-03-07

Family

ID=47756384

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/072041 Ceased WO2013031906A1 (fr) 2011-09-01 2012-08-30 Dispositif de conversion photoélectrique et procédé de fabrication dudit dispositif

Country Status (2)

Country Link
JP (1) JP5770294B2 (fr)
WO (1) WO2013031906A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020505786A (ja) * 2017-01-18 2020-02-20 エネル グリーン パワー エス．ピー．エー．Ｅｎｅｌ Ｇｒｅｅｎ Ｐｏｗｅｒ Ｓ．Ｐ．Ａ． シングル型、タンデム型ならびにヘテロ接合型太陽電池装置およびその形成方法
CN114566561A (zh) * 2020-11-27 2022-05-31 嘉兴阿特斯技术研究院有限公司 异质结太阳能电池及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005011001A1 (fr) * 2003-07-24 2005-02-03 Kaneka Corporation Convertisseur photoelectrique a empilement
JP2009290115A (ja) * 2008-05-30 2009-12-10 Kaneka Corp シリコン系薄膜太陽電池
WO2010044378A1 (fr) * 2008-10-14 2010-04-22 株式会社カネカ Cellule solaire à film mince au silicium et son procédé de fabrication

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005011002A1 (fr) * 2003-07-24 2005-02-03 Kaneka Corporation Photopile a couches minces a base de silicium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005011001A1 (fr) * 2003-07-24 2005-02-03 Kaneka Corporation Convertisseur photoelectrique a empilement
JP2009290115A (ja) * 2008-05-30 2009-12-10 Kaneka Corp シリコン系薄膜太陽電池
WO2010044378A1 (fr) * 2008-10-14 2010-04-22 株式会社カネカ Cellule solaire à film mince au silicium et son procédé de fabrication

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020505786A (ja) * 2017-01-18 2020-02-20 エネル グリーン パワー エス．ピー．エー．Ｅｎｅｌ Ｇｒｅｅｎ Ｐｏｗｅｒ Ｓ．Ｐ．Ａ． シングル型、タンデム型ならびにヘテロ接合型太陽電池装置およびその形成方法
US11670729B2 (en) 2017-01-18 2023-06-06 Sun S.R.L. Solar cell apparatus and method for forming the same for single, tandem and heterojunction systems
JP2024109826A (ja) * 2017-01-18 2024-08-14 ３サン エス．アール．エル シングル型、タンデム型ならびにヘテロ接合型太陽電池装置およびその形成方法
CN114566561A (zh) * 2020-11-27 2022-05-31 嘉兴阿特斯技术研究院有限公司 异质结太阳能电池及其制作方法

Also Published As

Publication number Publication date
JP5770294B2 (ja) 2015-08-26
JPWO2013031906A1 (ja) 2015-03-23

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