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WO2013022234A3 - Method of manufacturing czt(s,se)-based thin film for solar cell and czt(s,se)-based thin film manufactured thereby - Google Patents

Method of manufacturing czt(s,se)-based thin film for solar cell and czt(s,se)-based thin film manufactured thereby Download PDF

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Publication number
WO2013022234A3
WO2013022234A3 PCT/KR2012/006198 KR2012006198W WO2013022234A3 WO 2013022234 A3 WO2013022234 A3 WO 2013022234A3 KR 2012006198 W KR2012006198 W KR 2012006198W WO 2013022234 A3 WO2013022234 A3 WO 2013022234A3
Authority
WO
WIPO (PCT)
Prior art keywords
czt
thin film
based thin
solar cell
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/006198
Other languages
French (fr)
Other versions
WO2013022234A2 (en
Inventor
Jihye Gwak
Jae-Ho Yun
Sejin Ahn
Kyung-Hoon Yoon
Sunghun JUNG
Kee-Shik Shin
SeoungKyu AHN
Ara Cho
Sang-Hyun Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Institute of Energy Research KIER
Original Assignee
Korea Institute of Energy Research KIER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Institute of Energy Research KIER filed Critical Korea Institute of Energy Research KIER
Publication of WO2013022234A2 publication Critical patent/WO2013022234A2/en
Publication of WO2013022234A3 publication Critical patent/WO2013022234A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

This invention relates to a method of manufacturing a CZT(S,Se)-based thin film for a solar cell and a CZT(S,Se)-based thin film manufactured thereby. This method includes depositing Sn, Zn and Cu on a substrate in a predetermined order using evaporation method to form a CZT-based precursor thin film and subjecting the CZT-based precursor thin film to selenization or sulfurization, thereby suppressing Sn loss during the manufacturing process and increasing the energy efficiency of the solar cell using the same.
PCT/KR2012/006198 2011-08-08 2012-08-03 Method of manufacturing czt(s,se)-based thin film for solar cell and czt(s,se)-based thin film manufactured thereby Ceased WO2013022234A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110078523A KR20130016528A (en) 2011-08-08 2011-08-08 Preparation method for czt(s,se) thin film and czt(s,se) thin film prepared the same
KR10-2011-0078523 2011-08-08

Publications (2)

Publication Number Publication Date
WO2013022234A2 WO2013022234A2 (en) 2013-02-14
WO2013022234A3 true WO2013022234A3 (en) 2013-05-02

Family

ID=47669050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/006198 Ceased WO2013022234A2 (en) 2011-08-08 2012-08-03 Method of manufacturing czt(s,se)-based thin film for solar cell and czt(s,se)-based thin film manufactured thereby

Country Status (2)

Country Link
KR (1) KR20130016528A (en)
WO (1) WO2013022234A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101449576B1 (en) * 2013-04-04 2014-10-16 한국에너지기술연구원 Fabrication method of czts-based absorber layers by non-vacuum process
KR101406704B1 (en) * 2013-04-18 2014-06-12 한국에너지기술연구원 FABRICATION METHOD OF CZTSe ABSORBER LAYERS BY CO-EVAPORATION PROCESS
KR101465209B1 (en) * 2013-06-10 2014-11-26 성균관대학교산학협력단 LIGHT ABSORBING LAYER CONTAINING CZTSSe-BASED THIN FILM AND PREPARING METHOD OF THE SAME
CN104701394B (en) * 2013-12-09 2017-02-15 北京有色金属研究总院 A Cu2ZnSn(S1‑xSex)4 thin film with preferred orientation
WO2016053016A1 (en) * 2014-09-29 2016-04-07 이화여자대학교 산학협력단 Cztse-based thin film and manufacturing method therefor, and solar cell using cztse-based thin film
US10570015B2 (en) 2016-09-02 2020-02-25 International Business Machines Corporation Minimizing tin loss during thermal processing of kesterite films
US10361331B2 (en) * 2017-01-18 2019-07-23 International Business Machines Corporation Photovoltaic structures having multiple absorber layers separated by a diffusion barrier
KR102025091B1 (en) * 2018-05-28 2019-09-25 한국에너지기술연구원 CZT(S,Se) FILM, FORMING METHOD FOR CZT(S,Se) FILM, CZT(S,Se) SOLAR CELL AND MANUFACTURING METHOD FOR CZT(S,Se) SOLAR CELL

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045305A (en) * 2008-08-18 2010-02-25 Toyota Central R&D Labs Inc Sulfide compound semiconductor
KR20110068157A (en) * 2009-12-15 2011-06-22 한국에너지기술연구원 Cu-In-en-Sn- (Se, S) -based thin film for solar cells and method for manufacturing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045305A (en) * 2008-08-18 2010-02-25 Toyota Central R&D Labs Inc Sulfide compound semiconductor
KR20110068157A (en) * 2009-12-15 2011-06-22 한국에너지기술연구원 Cu-In-en-Sn- (Se, S) -based thin film for solar cells and method for manufacturing same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
O. VOLOBUJEVA ET AL.: "SEM analysis and selenization of Cu-Zn-Sn sequential films produced by evaporation of metals", IEEE OPTOELECTRONIC AND MICROELE CTRONIC MATERIALS AND DEVICES, COMMAD 2008, pages 257 - 260 *

Also Published As

Publication number Publication date
WO2013022234A2 (en) 2013-02-14
KR20130016528A (en) 2013-02-18

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