[go: up one dir, main page]

WO2013019399A3 - Method for producing a monocrystalline product - Google Patents

Method for producing a monocrystalline product Download PDF

Info

Publication number
WO2013019399A3
WO2013019399A3 PCT/US2012/047057 US2012047057W WO2013019399A3 WO 2013019399 A3 WO2013019399 A3 WO 2013019399A3 US 2012047057 W US2012047057 W US 2012047057W WO 2013019399 A3 WO2013019399 A3 WO 2013019399A3
Authority
WO
WIPO (PCT)
Prior art keywords
producing
monocrystalline
crystalline material
product
monocrystalline product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/047057
Other languages
French (fr)
Other versions
WO2013019399A2 (en
Inventor
Ning Duanmu
Scott J. TURCHETTI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
Original Assignee
GTAT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of WO2013019399A2 publication Critical patent/WO2013019399A2/en
Publication of WO2013019399A3 publication Critical patent/WO2013019399A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

A method of producing a monocrystalline product having a target size is disclosed. The method comprises the step of producing a first crystalline material in the hot zone of a crystal growth apparatus using a first crucible, wherein the first crystalline material has an interior monocrystalline portion that is too small to remove the desired monocrystalline product, and subsequently producing a second crystalline material in the hot zone of the same crystal growth apparatus using a second crucible having defined dimensions. The resulting second crystalline material has a larger interior monocrystalline portion from which the desired monocrystalline product can be removed.
PCT/US2012/047057 2011-08-04 2012-07-17 Method for producing a monocrystalline product Ceased WO2013019399A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161515124P 2011-08-04 2011-08-04
US61/515,124 2011-08-04

Publications (2)

Publication Number Publication Date
WO2013019399A2 WO2013019399A2 (en) 2013-02-07
WO2013019399A3 true WO2013019399A3 (en) 2013-06-06

Family

ID=47629840

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/047057 Ceased WO2013019399A2 (en) 2011-08-04 2012-07-17 Method for producing a monocrystalline product

Country Status (1)

Country Link
WO (1) WO2013019399A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743293B2 (en) * 2000-12-01 2004-06-01 Shusaku Kabushiki Kaiksha Cruicible and growth method for polycrystal silicon using same
US6969502B2 (en) * 2000-03-03 2005-11-29 Schott Glas Method and device for growing large-volume oriented monocrystals
US20090158993A1 (en) * 2007-12-19 2009-06-25 Uwe Sahr Method for producing a monocrystalline or polycrystalline semiconductore material
KR20100136253A (en) * 2009-06-18 2010-12-28 김영조 Crucible for making silicon ingot with assembly crucible.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6969502B2 (en) * 2000-03-03 2005-11-29 Schott Glas Method and device for growing large-volume oriented monocrystals
US6743293B2 (en) * 2000-12-01 2004-06-01 Shusaku Kabushiki Kaiksha Cruicible and growth method for polycrystal silicon using same
US20090158993A1 (en) * 2007-12-19 2009-06-25 Uwe Sahr Method for producing a monocrystalline or polycrystalline semiconductore material
KR20100136253A (en) * 2009-06-18 2010-12-28 김영조 Crucible for making silicon ingot with assembly crucible.

Also Published As

Publication number Publication date
WO2013019399A2 (en) 2013-02-07

Similar Documents

Publication Publication Date Title
EP2636511A4 (en) Modeling material for forming photoshaped article by ink-jet photoshaping method, support material for shape supporting during formation of photoshaped article by the photoshaping method, and process for producing photoshaped article by the photoshaping method
WO2012134092A3 (en) Method of manufacturing single crystal ingot, and single crystal ingot and wafer manufactured thereby
EP2702164B8 (en) A method for reducing heterogeneity of antibodies and a process of producing the antibodies thereof
WO2011027992A3 (en) Method and apparatus for growing a sapphire single crystal
WO2012171030A3 (en) Method and apparatus for antibody production and purification
PL2587914T3 (en) Growth substrate product, method of growing plants and process of making a growth substrate product
WO2012125365A3 (en) Automated vision system for a crystal growth apparatus
WO2012151155A3 (en) Apparatus and method for producing a multicrystalline material having large grain sizes
PL2725925T3 (en) Process for the production of natural crystalline colorant and related processing system
EP2402473B8 (en) Process for producing a single-crystal component made of a nickel-based superalloy
EP2559791A4 (en) Single-crystal substrate, single-crystal substrate having crystalline film, crystalline film, method for producing single-crystal substrate having crystalline film, method for producing crystalline substrate, and method for producing element
WO2013050748A3 (en) Process for preparing buprenorphine
MX2016012260A (en) Resolubilization of protein crystals at low ph.
EP3782917A4 (en) Packaging method for polycrystalline silicon, double-packaging method for polycrystalline silicon, and production method for raw material for monocrystalline silicon
WO2009140406A3 (en) Crystal growth apparatus for solar cell manufacturing
EP2771917B8 (en) Thermocouple, method of production and substrate that is suitable for carrying out the method
WO2012169828A3 (en) Apparatus for fabricating ingot
WO2012109119A3 (en) Process for liquefying starch in the presence of pyridoxamine
WO2012177012A3 (en) Apparatus for fabricating ingot
WO2013015642A3 (en) Method for growth of ingot
WO2013019026A3 (en) Apparatus for fabricating ingot
SG11201400974VA (en) Crystal of 5-hydroxy-1h-imidazole-4-carboxamideˑ3/4 hydrate, method for producing the same and crystal of 5-hydroxy-1h-imidazole-4-carboxamide hydrate
WO2012107445A3 (en) Soft substrate for cell culture and process for preparing the same
WO2013019399A3 (en) Method for producing a monocrystalline product
EP2635542A4 (en) Method for the production of fertilizer products from residues

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12819745

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 12819745

Country of ref document: EP

Kind code of ref document: A2