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WO2013075650A1 - Procédé d'encapsulation pour puce de capteur d'image et module de caméra - Google Patents

Procédé d'encapsulation pour puce de capteur d'image et module de caméra Download PDF

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Publication number
WO2013075650A1
WO2013075650A1 PCT/CN2012/085104 CN2012085104W WO2013075650A1 WO 2013075650 A1 WO2013075650 A1 WO 2013075650A1 CN 2012085104 W CN2012085104 W CN 2012085104W WO 2013075650 A1 WO2013075650 A1 WO 2013075650A1
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WIPO (PCT)
Prior art keywords
image sensor
adhesive
viscosity
variable
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2012/085104
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English (en)
Chinese (zh)
Inventor
霍介光
李�杰
赵立新
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Galaxycore Shanghai Ltd Corp
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Galaxycore Shanghai Ltd Corp
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Publication of WO2013075650A1 publication Critical patent/WO2013075650A1/fr
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02371—Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13023—Disposition the whole bump connector protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Definitions

  • the present invention relates to the field of semiconductors, and more particularly to a method of packaging an image sensor chip and a camera module. Background technique
  • Image sensors are developed on the basis of optoelectronic technology, which is a sensor that can sense optical image information and convert it into usable output signals.
  • Image sensors can improve the visual range of the human eye, enable people to see the microscopic world and macroscopic world that are invisible to the naked eye, see what happens when people are temporarily unable to reach, and see various physical and chemical changes that go beyond the visual range of the naked eye.
  • the image sensor functions in the form of an image sensor chip that senses optical image information and converts it into usable output signals.
  • a packaged image sensor is formed by a series of packaging processes on an image sensor wafer for use in a variety of optical applications such as digital cameras, digital video cameras, and the like.
  • the conventional packaging process for the image sensor wafer generally includes the following steps: First, the photosensitive surface of the image sensor wafer is bonded to the glass by a sealing adhesive including epoxy resin such as AB glue; secondly, the image sensor is The opposite side of the photosensitive surface of the wafer is thinned by, for example, a grinding process; again, after the image sensor wafer is thinned, the image sensor wafer is etched to form a through hole, and the through hole is injected A metal liquid such as copper is used to electrically connect the pads of the wafer to the solder balls by copper after cooling; finally, the image sensor wafer is cut to obtain a separate image sensor chip. Thereby an image sensor chip as shown in Fig. 1 is formed. The packaged chip shown will contain a chip and a piece of glass covering its photosensitive surface. Selected as optical glass.
  • the image sensor chip 10 shown in FIG. 1 includes a glass 101, a wafer substrate 102, a solder material 103, an electrical contact portion 104, an adhesive 105 (such as an AB paste containing epoxy resin), a photosensitive surface 106, and a pad.
  • an adhesive 105 such as an AB paste containing epoxy resin
  • the glass 101 is adhered to the photosensitive surface 106 by the adhesive 105, preferably optical glass, so that light may be lost during entering the photosensitive surface 106 of the image sensor chip through the glass 101, and may be formed by scattering.
  • the image is degraded, and the price of the optical glass is relatively expensive, which also increases the cost of the image sensor chip. Summary of the invention
  • a method of packaging an image sensor chip comprising the steps of: A. bonding a photosensitive surface of an image sensor wafer to a substrate by a variable viscosity adhesive; B. connecting the pad of the image sensor to the solder material on the back side of the image sensor wafer; C. cutting the image sensor wafer to obtain a separate image sensor chip; D. changing the viscosity variable adhesive The tackiness is to peel the substrate from the separate image sensor chip.
  • Such a packaging method reduces the loss of light entering the photosensitive surface of the image sensor chip, and also improves the image formation due to scattering, since the optical glass is not required, thereby also reducing the image sensor chip. cost.
  • the method further comprises the step of: thinning the image sensor wafer from the back side of the image sensor wafer. Thinning the image sensor wafer enables the formation of thinner image sensor chips, thereby reducing the size of the packaged image sensor chip.
  • the pad of the image sensor is connected to the solder material on the back side of the wafer of the image sensor by a side lead or a via.
  • a method of packaging the image sensor chip comprises: - coating the variable viscosity adhesive on the substrate; - partially etching the variable viscosity adhesive; - bonding the substrate to the image sensor a photosensitive surface of the wafer, wherein the variable viscosity adhesive is located in a non-photosensitive area of the image sensor wafer.
  • the step A of the packaging method of the image sensor chip comprises: - coating the variable viscosity adhesive on a photosensitive surface of the image sensor wafer; Partially etching the variable viscosity adhesive to remove the viscosity-variable adhesive of the photosensitive region of the image sensor wafer; - bonding the substrate to the image sensor wafer Photosensitive surface.
  • the substrate bonded to the photosensitive surface of the image sensor wafer allows the photosensitive region of the image sensor to be hermetically covered, thereby preventing the photosensitive region from adhering with dust or metal particles during packaging to affect device performance.
  • the step A of the packaging method of the image sensor chip comprises: - coating the variable viscosity adhesive on the substrate; - etching the package in a portion An adhesive; - bonding the substrate to a photosensitive surface of the image sensor wafer, wherein the encapsulation adhesive is on a non-photosensitive area of the image sensor wafer. Since the encapsulating adhesive separates the substrate from the image sensor wafer, the photosensitive area of the image sensor does not adhere to the viscosity-variable adhesive, thereby avoiding insufficient viscosity of the adhesive in subsequent processing. Remove the stain from the photosensitive area.
  • the step A of the packaging method of the image sensor chip comprises: - coating the packaging adhesive on a photosensitive surface of the image sensor wafer; - a partial etching station a packaging adhesive; coating the encapsulating adhesive on the substrate.
  • the viscosity-variable adhesive used in the packaging method of the image sensor chip is a hot melt adhesive or an ultraviolet photosensitive adhesive. If the viscosity-variable adhesive is a hot melt adhesive, reducing the viscosity of the viscosity-variable adhesive by heating the image sensor chip in the step D; if the viscosity is variable The adhesive is an ultraviolet photosensitive adhesive, then the image sensor chip is irradiated by ultraviolet light in the step D The viscosity of the variable viscosity adhesive is reduced. The variable viscosity adhesive after viscosity reduction is easily removed from the base or photosensitive surface.
  • the encapsulating adhesive for the encapsulation method of the image sensor chip comprises an epoxy resin.
  • a camera module including an image sensor and an optical lens above a side of a photosensitive area of the image sensor, wherein there is no solid between the image sensor photosensitive area and the optical lens Light transmissive medium.
  • Figure 1 shows a cross-sectional view of an image sensor chip fabricated in accordance with a conventional packaging method
  • Figure 2 shows a flow chart of a packaging method in accordance with the present invention
  • 3a-3k are cross-sectional schematic views showing a method of packaging an image sensor chip in accordance with an embodiment of the present invention.
  • 4a-4h are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention.
  • 5a-5g are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention.
  • 6a-6g are schematic cross-sectional views showing a packaging method of an image sensor chip according to still another embodiment of the present invention.
  • Figure 7 illustrates a camera module in accordance with one embodiment of the present invention.
  • FIG. 2 shows a flow chart of a packaging method 20 in accordance with the present invention.
  • step S201 the photosensitive surface of the image sensor wafer is bonded to the substrate by a variable viscosity adhesive, wherein the variable viscosity adhesive may be ultraviolet photosensitive adhesive or hot melt.
  • a glue subsequently, in step S202, the pad of the image sensor is connected to the solder material on the back side of the image sensor wafer, such as a solder ball, wherein the commonly used connector is followed by the above steps in step S203.
  • step S204 the process of peeling off the substrate is performed on the separated image sensor chip after cutting, that is, changing the viscosity
  • the adhesive is detached to peel the substrate from the separated image sensor chip, wherein if the variable viscosity adhesive is an ultraviolet photosensitive adhesive, the image sensor chip is irradiated by ultraviolet light Means to change the viscosity of the variable viscosity adhesive to separate the substrate from the image sensor Sheet peeling; if the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor chip to remove the substrate from The separated image sensor chip is stripped.
  • the variable viscosity adhesive is an ultraviolet photosensitive adhesive
  • the image sensor chip is irradiated by ultraviolet light Means to change the viscosity of the variable viscosity adhesive to separate the substrate from the image sensor Sheet peeling
  • the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor
  • the method further includes the step of thinning the image sensor wafer from the back side of the image sensor wafer.
  • the image sensor wafer can be thinned as much as possible to its minimum acceptable thickness, thereby meeting the requirements for miniaturization and high integration of semiconductor devices.
  • FIGS. 3a-3k show cross-sectional schematic views of a method of packaging an image sensor chip in accordance with one embodiment of the present invention.
  • an image sensor wafer 310 is provided.
  • the image sensor wafer 310 is formed with a plurality of image sensors, and a plurality of image sensors are further formed with a scribe line therebetween. Isolate different image sensors.
  • Each of the image sensors has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 310, that is, the photosensitive surface 306.
  • each image sensor it further includes a signal processing circuit region distributed around the periphery of each image sensor photosensitive region and adjacent to the dicing street, wherein the dicing channel, the signal processing circuit region, and the photosensitive surface Other areas of 306 that are not used for sensitization together constitute a non-photosensitive area.
  • the image sensor photosensitive surface 306 is further formed with a dielectric layer and an interconnect layer (not shown) disposed therein to extract circuit elements formed in the image sensor, wherein the interconnect layer further Includes pad 307.
  • a substrate 301 is provided, which is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate.
  • the substrate 301 should cover the image sensor in the image sensor wafer 310 to prevent dust, metal particles, etc. from contacting and adhering to the photosensitive area of the image sensor during packaging, testing, transportation, etc., thereby affecting the photographic effect of the image sensor and reliability.
  • a viscosity-variable adhesive 309 such as an ultraviolet photosensitive adhesive or a hot melt adhesive is applied onto a substrate 301 such as glass.
  • a viscosity-variable adhesive 309 it has a characteristic that the viscosity changes after being treated. Based on the read characteristics, the two faces bonded by the viscosity-variable adhesive 309 are easily separated by this treatment.
  • a hot melt adhesive it has a characteristic that the viscosity is remarkably lowered after being heated.
  • Ultraviolet photosensitive adhesives have the property of lowering the viscosity after being irradiated with ultraviolet light.
  • variable viscosity adhesive is schematically illustrated in the present embodiment by a hot melt adhesive or an ultraviolet photosensitive adhesive, but in practical use, the variable viscosity adhesive is not limited thereto.
  • Figure 3a shows a substrate 301 coated with UV-sensitive or hot-melt adhesive and an image sensor wafer 310 finished with a pre-package process, the viscosity-variable adhesive 309 being coated having a thickness of 2 ⁇ m to 10 (H m.
  • the viscosity-variable adhesive 309 can be applied by spin coating or spray coating so that the viscosity-variable adhesive 309 applied has better uniformity.
  • the coated viscosity-variable adhesive 309 is partially etched so as to retain only the portion between the respective sensors corresponding to the image sensor wafer 310, that is, the non-photosensitive area, and the image sensor
  • the viscosity-variable adhesive 309 of the photosensitive region is removed, as shown in Figure 3b.
  • the viscosity-variable adhesive 309 can also be applied directly to the image sensor wafer 310 by screen printing and shaped to cover a portion of the image sensor wafer 310.
  • the substrate 301 is bonded to the photosensitive surface 306 of the image sensor wafer 310 as shown in Figure 3c.
  • the opposite side of the photosensitive surface 306 of the image sensor wafer 310 may alternatively be thinned, such as by a back grinding process to reduce the image sensor wafer 310 to less than 200 microns.
  • a portion of the back surface of the image sensor wafer 310 is etched until the interconnect layer is exposed to form a recess 311 on the back side thereof.
  • the etched area is the intermediate connection portion of each image sensor in the image sensor wafer 310, that is, the scribe line area, to expose the pad 307 therein, wherein the cut surface is usually slightly inclined, as shown in FIG. 3d. show.
  • a metal material is deposited on the back side of the etched image sensor wafer 310 in Fig. 3c to form a metal layer 312 which also covers the sidewalls and bottom of the four trenches 31 1 as shown in Fig. 3e.
  • the metal layer 312 is partially etched to form a plurality of conductive leads 304, as shown in Figure 3f.
  • the conductive leads 304 respectively lead the respective pads 307 of the image sensor to a predetermined area on the back side of the image sensor wafer 310, the predetermined area being used as a solder joint area for the solder joints.
  • solder material 303 such as a solder ball, is formed in the solder joint region, as shown in Fig. 3g.
  • the image sensor wafer 310 after the above steps is cut to obtain a separate image sensor chip, as shown in Fig. 3h.
  • the substrate 301 is peeled off from each of the separated image sensor chips, that is, the viscosity of the viscosity-variable adhesive 309 is changed to peel the substrate 301 from the separated image sensor chip, wherein if the viscosity-variable adhesive 309 is used Is a UV-sensitive adhesive, then the image sensor chip is irradiated by ultraviolet light to reduce the adhesive 309 Sticky to peel the substrate 301 from the separated image sensor chip; if the adhesive 309 is a hot melt adhesive, the viscosity of the adhesive 309 is lowered by heating the image sensor chip to separate the substrate 301 from the image.
  • the sensor chip is stripped, specifically, the viscosity of the viscosity-variable adhesive 309 is changed in any of the above two manners to be in a removable state, and then the image sensor chip is fixed, and a substrate is applied thereto.
  • the force of the detachment such as the adsorption force (vacuum or static electricity) applied to the back thereof, is separated, and the adhesive 309 having a variable viscosity after separation is located on the side of the substrate 301.
  • the separated image sensor chip as shown in FIG. 3h obtains the pattern sensor chip after peeling off the substrate as shown in FIG. 3i.
  • the viscosity change transition temperature usually does not exceed 260 degrees, but it takes a certain time (after 10 minutes) that the viscosity change will be relatively large, and the image sensor is in this temperature range.
  • the chip is heat treated, such as reflow soldering, to a very short time of 260 degrees, typically only a few ten seconds, and thus does not affect the device package structure formed thereon (eg, conductive leads 304).
  • the substrate 301 is usually made of a material having ultraviolet light permeable characteristics, such as optical glass, so that it is easy to irradiate the reading substrate 301 by ultraviolet light to cause the ultraviolet photosensitive adhesive to be irradiated with ultraviolet light. This reduces the viscosity.
  • the read pattern sensor chip should be immediately mounted to the lens 314 through the bracket 313 to prevent dust in the air from adhering to the photosensitive surface of the image sensor, as shown in Fig. 3j. And then integrated with the board, as shown in Figure 3k, which is shown mounted with the lens and integrated with the board 315.
  • an image sensor wafer 410 having a plurality of image sensors formed therein, and dicing tracks are formed between the plurality of image sensors to isolate different image sensors.
  • Each image sensor has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 410, i.e., the photosensitive surface 406.
  • variable viscosity adhesive 409 such as ultraviolet photosensitive adhesive or hot melt adhesive
  • FIG. 4a shows the image sensor wafer 410 and the substrate coated with the ultraviolet photosensitive adhesive or the hot melt adhesive.
  • the viscosity-variable adhesive 409 is applied to a thickness of from 2 micrometers to 100 micrometers.
  • the viscosity-variable adhesive 409 can be applied by spin coating or spray coating to provide better uniformity of the coated viscosity-variable adhesive 409.
  • the coated viscosity-variable adhesive 409 is partially etched so as to retain only the portion between the respective sensors corresponding to the image sensor wafer 410, that is, the non-photosensitive area, as shown in FIG. 4b. Shown. In some other examples, the viscosity-variable adhesive 409 can also be applied directly to the image sensor wafer 410 by screen printing and shaped to cover a portion of the image sensor wafer 410.
  • the substrate 401 is bonded to the photosensitive surface 406 of the image sensor wafer 410 as shown in Fig. 4c.
  • the substrate 401 is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate.
  • the read substrate 401 should cover the image sensor in the image sensor wafer 410 to prevent dust, metal particles, etc. from contacting and adhering to the photosensitive area of the image sensor during packaging, testing, transportation, etc., thereby affecting the photographic effect of the image sensor and reliability.
  • the opposite side of the photosensitive surface of the image sensor wafer 410 may be thinned, such as by a back grinding process to reduce the image sensor wafer 410 to less than 200 microns.
  • the pad of the image sensor is connected to the solder material 403 on the back surface of the image sensor wafer by means of a via hole, specifically, a via hole is formed by etching from the back surface of the image sensor wafer, as shown in FIG. 4d.
  • a metal material 408, such as copper is then filled in the via, via which a plurality of pads 407 are respectively connected to the pad regions on the back side of the image sensor wafer 410, as shown in Figure 4e.
  • a solder material 403, such as a solder ball is formed in the region of the solder joint so that the solder pad 407 is electrically connected to the solder material 403 as shown in Fig. 4f.
  • variable viscosity adhesive strips the substrate from the separated image sensor chip, wherein if the variable viscosity adhesive is an ultraviolet photosensitive adhesive, then ultraviolet light is passed through Irradiating the image sensor chip to change the viscosity of the viscosity-variable adhesive to peel the substrate from the separate image sensor chip; if the viscosity-variable adhesive is heated a glue, then changing the viscosity of the viscosity-variable adhesive by heating the image sensor chip to peel the substrate from the separate image sensor chip, wherein, as shown in FIG. 4f The separate image sensor chip is obtained after stripping the substrate as shown in Figure 4h.
  • FIG. 5a-5g are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention.
  • an image sensor wafer 510 is provided.
  • a plurality of image sensors are formed in the read image sensor wafer 510, and dicing tracks are formed between the plurality of image sensors to isolate different image sensors.
  • Each of the image sensors has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 510, i.e., the photosensitive surface 506.
  • variable viscosity adhesive 509 such as an ultraviolet photosensitive adhesive or a hot melt adhesive
  • FIG. 5a shows the substrate 501 coated with the ultraviolet photosensitive adhesive or the hot melt adhesive
  • the image sensor wafer 510 of the pre-package process is completed, and the coated viscosity-variable adhesive 509 has a thickness of 2 micrometers to 100 micrometers.
  • the coated viscosity-variable adhesive 509 has better uniformity.
  • a package adhesive 520 is applied to the substrate after the viscosity-variable adhesive 509 is applied, and the package adhesive may be an AB paste including an epoxy resin, as shown in Fig. 5b.
  • the encapsulation adhesive 520 is partially etched such that only portions 521 between the respective sensors corresponding to the image sensor wafer are retained.
  • the viscosity-variable adhesive 509 at the corresponding position is also partially or completely etched away, as shown in Figure 5c.
  • the encapsulating adhesive 520 can also be applied directly to the image sensor coated with the viscosity variable adhesive 509 by screen printing.
  • Wafer 510 is formed and patterned into a pattern 521 that covers a portion of image sensor wafer 510.
  • the substrate 501 is bonded to the photosensitive surface 506 of the image sensor wafer 510, wherein the portion 521 of the package adhesive 520 that has been partially etched remains corresponding to the non-photosensitive area of the image sensor wafer 510, such as Figure 5d is shown.
  • the substrate 501 is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate.
  • the image sensor in the image sensor wafer 510 should be covered to prevent dust, metal particles, etc.
  • the photosensitive area affects the photographic effect and reliability of the image sensor.
  • the package adhesive 520 isolates the substrate 501 from the image sensor wafer 510, the photosensitive area of the image sensor does not adhere to the viscosity-variable adhesive, thereby avoiding viscosity change in subsequent processing.
  • the adhesive is not able to sufficiently remove the staining of the photosensitive area caused by the adhesive.
  • the opposite side of the photosensitive surface of the image sensor wafer 510 may alternatively be thinned, such as by a back grinding process to reduce the image sensor wafer 510 to less than 200 microns.
  • the pad of the image sensor is connected to the solder material 503 on the back surface of the image sensor wafer 510 by means of via holes, specifically, the via hole is formed by etching from the back side of the image sensor wafer 510, and then The via holes are filled with a metal material 508, such as copper, through which the plurality of pads 507 are respectively led out to the pad regions on the back side of the image sensor wafer 510.
  • a solder material 503, such as a solder ball is formed in the solder joint region to electrically connect the pad 507 to the solder material 503 as shown in Fig. 5e.
  • an image sensor chip for peeling off the substrate is performed, wherein if the viscosity variable adhesive is an ultraviolet photosensitive adhesive, the image is irradiated by ultraviolet light.
  • Sensor chip approach Like the sensor chip stripping; if the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor chip to The substrate is peeled off from the separated image sensor chip, wherein the separated image sensor chip as shown in Fig. 5f is obtained after peeling off the substrate as shown in Fig. 5g.
  • FIGS. 6a-6g are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention.
  • an image sensor wafer 610 is provided.
  • a plurality of image sensors are formed in the image sensor wafer 610, and dicing tracks are formed between the plurality of image sensors to isolate different image sensors.
  • Each of the image sensors has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 610, i.e., the photosensitive surface 606.
  • the package adhesive 620 is coated on the photosensitive surface 606 of the image sensor wafer 610.
  • the package adhesive may be an AB paste including epoxy resin, as shown in FIG. 6a, partially etched and encapsulated.
  • the agent 620 is retained only at a portion 621 between the respective sensors corresponding to the image sensor wafer, wherein the portion 621 of the package adhesive 620 that has been partially etched remains corresponding to the non-photosensitive of the image sensor wafer In the area, as shown in Figure 6b.
  • the encapsulation adhesive 620 can also be applied directly to the image sensor wafer 610 by screen printing and formed into a pattern 621 that covers a portion of the image sensor wafer 610.
  • variable viscosity adhesive 609 such as ultraviolet photosensitive adhesive or hot melt adhesive
  • FIG. 6c shows the image sensor crystal coated with the ultraviolet photosensitive adhesive or the hot melt adhesive.
  • the circle 610 and the substrate 601 are coated with the variable viscosity adhesive 609 to a thickness of from 2 micrometers to 100 micrometers.
  • the viscosity-variable adhesive 609 can be applied by spin coating or spray coating to provide better uniformity of the coated viscosity-variable adhesive 609.
  • the substrate 601 is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate.
  • the substrate 601 After bonding with the photosensitive surface 606 of the image sensor wafer 610, the image sensor in the image sensor wafer 610 should be covered to prevent dust, metal particles, etc. from contacting and adhering to the photosensitive area of the image sensor during packaging, testing, transportation, and the like. , thereby affecting the photographic effect and reliability of the image sensor.
  • the opposite side of the photosensitive surface of the image sensor wafer 610 may be thinned, such as by a back grinding process to thin the image sensor wafer 610 to less than 200 microns.
  • the pad of the image sensor is connected to the solder material 603 on the back surface of the image sensor wafer by means of a via hole, specifically, a through hole is formed by etching from the back side of the image sensor wafer, and then in the through hole
  • the middle filling metal material 608, such as copper leads a plurality of pads 607 to the solder joint area on the back surface of the image sensor wafer 610 via the metal material 608, and then forms a solder material 603, such as a solder ball, in the solder joint area.
  • the pad 607 is electrically connected to the pad material 603 as shown in FIG. 6e.
  • the substrate is peeled off from each of the separated image sensor chips, that is, the viscosity of the variable viscosity adhesive is changed to peel the substrate from the separated image sensor chip, wherein if the viscosity is variable
  • the adhesive is an ultraviolet photosensitive adhesive, and then the viscosity of the variable viscosity adhesive is changed by ultraviolet light to irradiate the image sensor chip to remove the substrate from the separated image sensor chip. Stripping; if the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor chip to remove the substrate from the substrate The separate image sensor chip is stripped, wherein a separate image sensor chip as shown in Figure 6f is obtained after stripping the substrate as shown in Figure 6g.
  • FIG. 7 illustrates a camera module in accordance with one embodiment of the present invention.
  • the camera module can be formed by the packaging method in the foregoing embodiment.
  • the camera module includes: an image sensor 701 and an optical lens 706 on the side of the photosensitive area 702 of the image sensor 701.
  • the optical lens 706 is connected to the image sensor 701 via a bracket 703. among them,
  • the opposite side of the photosensitive area 702 of the i-pixel image sensor 701 has a plurality of solder joints 704 that cause the disk 705 of the image sensor 701 to be taken out.
  • the pad 705 and the solder joint 704 can be electrically connected by side leads or vias depending on the particular application.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un procédé d'encapsulation pour une puce de capteur d'image et un module de caméra. Le procédé d'encapsulation comprend les étapes suivantes : adhésion d'une surface photosensible d'une galette de capteur d'image sur un substrat avec un adhésif à viscosité variable; raccordement d'une patte de soudage (705) d'un capteur d'image (701) à un matériau de soudage (704) à l'arrière de la galette du capteur d'image; découpe de la galette du capteur d'image pour obtenir une puce de capteur d'image séparée; et modification de la viscosité de l'adhésif à viscosité variable pour séparer par pelage le substrat de la puce de capteur d'image séparée. Le procédé d'encapsulation réduit la perte de rayons lumineux au moment de la pénétration dans la surface photosensible de la puce de capteur d'image, améliore la situation lorsque l'image se détériore à cause de la diffusion, il permet également de réduire les coûts.
PCT/CN2012/085104 2011-11-25 2012-11-23 Procédé d'encapsulation pour puce de capteur d'image et module de caméra Ceased WO2013075650A1 (fr)

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CN201110382616.6A CN102496622B (zh) 2011-11-25 2011-11-25 图像传感器芯片的封装方法以及摄像模组
CN201110382616.6 2011-11-25

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CN103552977A (zh) * 2013-11-08 2014-02-05 陈闯 微机电系统晶圆级封装结构及封装方法
CN105734494B (zh) * 2016-04-12 2018-12-25 京东方科技集团股份有限公司 一种蒸镀载板及蒸镀装置
KR20190013917A (ko) * 2016-05-30 2019-02-11 차이나 와퍼 레벨 씨에스피 씨오., 엘티디. 패키징 구조체 및 패키징 방법
CN105977271A (zh) * 2016-05-30 2016-09-28 苏州晶方半导体科技股份有限公司 封装结构及封装方法
CN109872986B (zh) * 2017-12-04 2023-07-04 新加坡有限公司 光学传感器的封装结构及光学传感器的封装方法
US11323595B2 (en) 2017-12-19 2022-05-03 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Chip assembly, camera and electronic device
CN107888815A (zh) * 2017-12-19 2018-04-06 广东欧珀移动通信有限公司 芯片组件及制造其的模具组件、摄像头和电子设备
WO2020019940A1 (fr) * 2018-07-26 2020-01-30 宁波舜宇光电信息有限公司 Composant photosensible, panneau de composant photosensible, panneau de composant de moulage et procédé de fabrication
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CN109545807A (zh) * 2018-11-12 2019-03-29 通富微电子股份有限公司 一种半导体封装器件
CN109545805A (zh) * 2018-11-12 2019-03-29 通富微电子股份有限公司 一种半导体芯片封装方法
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