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WO2013046674A1 - Procédé de fabrication de dispositif à del - Google Patents

Procédé de fabrication de dispositif à del Download PDF

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Publication number
WO2013046674A1
WO2013046674A1 PCT/JP2012/006161 JP2012006161W WO2013046674A1 WO 2013046674 A1 WO2013046674 A1 WO 2013046674A1 JP 2012006161 W JP2012006161 W JP 2012006161W WO 2013046674 A1 WO2013046674 A1 WO 2013046674A1
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WO
WIPO (PCT)
Prior art keywords
phosphor
led chip
led
layer
particles
Prior art date
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Ceased
Application number
PCT/JP2012/006161
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English (en)
Japanese (ja)
Inventor
貴志 鷲巣
卓史 波多野
禄人 田口
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Konica Minolta Advanced Layers Inc
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Konica Minolta Advanced Layers Inc
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Priority to JP2013535920A priority Critical patent/JP5765428B2/ja
Publication of WO2013046674A1 publication Critical patent/WO2013046674A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

Definitions

  • the present invention relates to a method for manufacturing an LED device.
  • a light-emitting element (LED element) using an LED chip has been increasingly applied to various uses as the light-emitting element has increased brightness and demand for energy saving.
  • LED element a white LED element that emits white light by combining blue light and yellow light by combining a blue LED chip and a phosphor that emits yellow light by receiving blue light is known.
  • white LED elements have come to be used as lighting for electric lights that require white light, backlights for liquid crystal display devices, and the like.
  • a white LED element that combines an LED chip and a phosphor a white LED is formed by further combining an LED chip that emits ultraviolet light and a phosphor that emits blue, green, and red light by ultraviolet light.
  • a white LED element, a white LED element that emits white light by combining an LED chip that emits blue light and a phosphor that emits red and green light has been studied.
  • an illumination configuration combining an LED and a phosphor a configuration in which an LED chip is sealed with a cured resin layer in which the phosphor is dispersed has been developed.
  • the illuminating device in which the LED chip is sealed with the cured resin layer as described above is applied to an illuminating device (such as an automobile headlight) that requires high brightness, the cured resin layer may be thermally deteriorated. This is because the amount of heat generated from the LED chip increases.
  • the phosphor in the LED element is disposed selectively in a necessary position, that is, on the LED chip.
  • a method such as a dispenser or an ink jet.
  • the particle diameter of the phosphor particles is generally 10 ⁇ m to 20 ⁇ m, there is a possibility that nozzle clogging of the ink jet head may occur when the phosphor dispersion liquid is applied using the ink jet method.
  • nozzle clogging is prevented, but application accuracy is reduced, and application to unnecessary portions occurs.
  • the first of the present invention relates to a method for manufacturing an LED device shown below.
  • the manufacturing method of the LED device which has a fluorescent substance layer including the process of removing the said fluorescent substance.
  • a phosphor layer can be selectively formed on a specific part including the LED chip. Therefore, in the LED device of the present invention, the light emitted from the LED chip (excitation light) can be uniformly applied to the phosphor. Therefore, it is possible to provide an LED device that emits light with no color unevenness.
  • the LED device (semiconductor light-emitting device) of the present invention includes an LED light-emitting element and a phosphor layer.
  • FIG. 1 is a cross-sectional view illustrating an example of the LED device 100.
  • the LED light emitting element connects a package (LED substrate) 1 having a recess 11, a metal part (metal wiring) 2, an LED chip 3 disposed in the recess 11 of the package 1, and the metal part 2 and the LED chip 3.
  • the aspect which connects the metal part 2 and LED chip 3 via the protruding electrode 4 is called flip chip type.
  • Package 1 is, for example, liquid crystal polymer or ceramic, but the material is not particularly limited as long as it has insulation and heat resistance.
  • the LED chip 3 is, for example, a blue LED.
  • blue LED configurations include an n-GaN compound semiconductor layer (cladding layer), an InGaN compound semiconductor layer (light emitting layer), and a p-GaN compound semiconductor layer (cladding layer) stacked on the LED substrate 1. ) And a transparent electrode layer.
  • the LED chip 3 has a surface of 200 to 300 ⁇ m ⁇ 200 to 300 ⁇ m, for example, and the height of the LED chip 3 is 50 to 200 ⁇ m.
  • one LED chip 3 is disposed in the recess 11 of the package 1; however, a plurality of LED chips 3 may be disposed in the recess 11 of the package 1.
  • the LED device 100 includes a phosphor layer 6 that covers the light emitting surface of the LED chip 3.
  • the phosphor layer 6 is a ceramic layer including phosphor particles and ceramic as a binder, and may further include tabular particles, oxide fine particles, aluminum silicate (imogolite), and the like. As shown in FIG. 1, the phosphor layer 6 only needs to selectively cover the light emitting surface of the LED chip 3 (the upper surface and the side surface of the LED chip 3). As described above, the phosphor layer 6 is selectively formed on the surface of the LED chip 3 and is not formed on the entire inside of the recess 11 of the package 1.
  • the phosphor layer 6 is a layer that receives light (excitation light) emitted from the LED chip 3 and emits fluorescence. By mixing excitation light and fluorescence, light of a desired color is emitted from the LED device 100. For example, if the light from the LED chip 3 is blue and the fluorescence from the phosphor layer 6 is yellow, the LED device 100 can be a white LED light-emitting device.
  • the phosphor particles contained in the phosphor layer 6 are excited by the wavelength (excitation wavelength) of light emitted from the LED of the LED chip 3, and emit fluorescence having a wavelength different from the excitation wavelength.
  • the phosphor particles emit yellow fluorescence, thereby obtaining a white LED element.
  • Examples of phosphors that emit yellow fluorescence include YAG (yttrium, aluminum, garnet) phosphors.
  • the YAG phosphor can emit excitation light composed of blue light (wavelength 420 nm to 485 nm) emitted from the blue LED chip and emit yellow light (wavelength 550 nm to 650 nm).
  • phosphors can be obtained by, for example, 1) mixing an appropriate amount of a fluoride such as ammonium fluoride as a flux into a mixed raw material having a predetermined composition and pressurizing it to obtain a molded body, and 2) placing the obtained molded body in a crucible. It can be manufactured by packing and firing in air at a temperature range of 1350 to 1450 ° C. for 2 to 5 hours to obtain a sintered body.
  • a fluoride such as ammonium fluoride
  • a mixed raw material having a predetermined composition is obtained by sufficiently mixing the oxides of Y, Gd, Ce, Sm, Al, La, and Ga, or compounds that easily become oxides at high temperatures in a stoichiometric ratio. Can do.
  • the mixed raw material having a predetermined composition is a coprecipitation oxidation obtained by firing a solution obtained by dissolving a rare earth element of Y, Gd, Ce, and Sm in an acid in a stoichiometric ratio and coprecipitating with oxalic acid. It can be obtained by mixing a material with aluminum oxide and gallium oxide.
  • the kind of the phosphor is not limited to the YAG phosphor, and other phosphors such as a non-garnet phosphor not containing Ce can also be used.
  • the average primary particle diameter of the phosphor particles is preferably 1 ⁇ m or more and 50 ⁇ m or less, and more preferably 10 ⁇ m or less.
  • the larger the average primary particle size of the phosphor the higher the light emission efficiency (wavelength conversion efficiency).
  • the average primary particle size of the phosphor is too large, a gap generated at the interface between the phosphor and the binder in the phosphor layer is increased, and the film strength of the phosphor layer is decreased.
  • the average primary particle diameter of the phosphor is a value of D50 measured by a laser diffraction particle size distribution meter.
  • An example of a laser diffraction particle size distribution analyzer is a laser diffraction particle size distribution measuring device manufactured by Shimadzu Corporation.
  • the concentration of the phosphor in the ceramic layer constituting the phosphor layer 6 is the sum of the mass of the phosphor contained therein, the mass of the tabular particles, the mass of the oxide fine particles, and the mass of the ceramic as the binder. On the other hand, it is preferably 60% by mass or more and 95% by mass or less. Basically, the higher the concentration of the phosphor particles in the phosphor particle-containing ceramic layer, the better. This is because if the concentration of the phosphor in the ceramic layer is increased, the content ratio of the ceramic serving as the binder is lowered, and therefore the distribution of the phosphor particles in the ceramic layer tends to be uniform. Further, when the concentration of the phosphor is increased, a necessary amount of the phosphor can be disposed in the LED device even if the ceramic layer is thinned.
  • the concentration of the phosphor particles in the ceramic layer is high, the phosphor particles come into close contact with each other, so that the film strength of the ceramic layer can be increased. Furthermore, if the concentration of the phosphor particles in the ceramic layer is high, heat generated from the phosphor is easily dissipated from the ceramic layer.
  • the concentration of the phosphor in the ceramic layer is too high (greater than 95% by mass), the content ratio of the binder may be extremely lowered, and the phosphor particles may not be bound to each other.
  • the concentration of the phosphor particles in the ceramic layer constituting the phosphor layer 6 can be obtained from the composition of the phosphor dispersion liquid used for forming the film.
  • Tabular grains Typical examples of tabular grains that can be contained in the ceramic layer constituting the phosphor layer 6 include layered clay mineral fine particles.
  • the main component of the layered clay mineral fine particles is a layered silicate mineral, preferably a swellable clay mineral having a mica structure, a kaolinite structure, a smectite structure, etc., and a swellable clay mineral having a smectite structure rich in swelling properties. More preferred. Since the layered clay mineral fine particles have a flat plate shape, the film strength of the ceramic layer constituting the phosphor layer 6 can be improved.
  • a phosphor dispersion is applied to form a ceramic layer.
  • the viscosity of the phosphor dispersion liquid is increased, and sedimentation of the phosphor in the phosphor dispersion liquid is suppressed.
  • the tabular grains exist as a card house structure in the phosphor dispersion liquid, and the viscosity of the phosphor dispersion liquid can be significantly increased with a small amount.
  • the content of the tabular grains in the phosphor layer 6 is preferably 0.5% by mass or more and 20% by mass or less, and more preferably 0.5% by mass or more and 10% by mass or less.
  • the content of the tabular grains in the phosphor layer 6 is less than 0.5% by mass, the effect of increasing the viscosity of the phosphor dispersion cannot be obtained sufficiently.
  • the content of the layered silicate mineral exceeds 20% by mass, the strength of the ceramic layer decreases.
  • the surface of the layered clay mineral fine particles may be modified (surface treatment) with an ammonium salt or the like.
  • Oxide fine particles that can be contained in the phosphor layer 6 can be fine particles such as silicon oxide, titanium oxide, and zinc oxide.
  • the binder in the phosphor layer 6 is a ceramic that is a cured product of a silicon-containing organic compound such as siloxane
  • the oxide fine particles may be silicon oxide from the viewpoint of stability to the formed ceramic. preferable.
  • the oxide fine particles serve as a filler that fills a gap generated at the interface between the ceramic serving as the binder and the phosphor and the layered silicate mineral in the ceramic layer constituting the phosphor layer 6, and increases the film strength of the phosphor layer 6.
  • the average primary particle size of the oxide fine particles is preferably 0.001 ⁇ m or more and 50 ⁇ m or less in consideration of the respective effects described above.
  • the average primary particle size of the oxide fine particles is a value of D50 measured by a laser diffraction particle size distribution meter.
  • An example of a laser diffraction particle size distribution analyzer is a laser diffraction particle size distribution measuring device manufactured by Shimadzu Corporation.
  • the content of the oxide fine particles in the phosphor layer 6 is more preferably 0.5% by mass or more and 20% by mass or less. If the content of the oxide fine particles in the phosphor layer 6 is less than 0.5% by mass or exceeds 20% by mass, the film strength of the ceramic layer constituting the phosphor layer 6 is not sufficiently increased.
  • the surface of the oxide fine particles may be treated with a silane coupling agent or a titanium coupling agent. By the surface treatment, the compatibility of the oxide fine particles with the organometallic compound and the organic solvent is increased.
  • the ceramic contained in the phosphor layer 6 serves as a binder for binding phosphor particles together.
  • the ceramic is a transparent ceramic such as glass. More specifically, the ceramic may be a ceramic made of polysiloxane or polysilazane.
  • a transparent ceramic as a binder, the heat resistance of the phosphor layer 6 can be improved as compared with the case where a cured resin is used as a binder.
  • the content of the ceramic in the phosphor layer 6 is preferably 3% by mass or more and 35% by mass or less, and more preferably 10% by mass or more and 30% by mass or less.
  • the content of the binder (transparent ceramic) in the phosphor layer 6 is less than 3% by mass, the ceramic as the binder is too little, and thus the strength of the phosphor layer 6 after heating and firing is lowered.
  • the content of the binder (transparent ceramic) exceeds 40% by mass, the content of layered clay mineral fine particles and inorganic fine particles is relatively lowered.
  • the strength of the phosphor layer 6 is lowered.
  • the content of the layered clay mineral fine particles in the phosphor layer 6 is relatively lowered, the content of the layered clay mineral fine particles in the phosphor dispersion liquid is likely to be lowered, and the viscosity of the phosphor dispersion liquid is also liable to be lowered.
  • the thickness of the ceramic layer constituting the phosphor layer 6 is not particularly limited because it is set according to the amount of phosphor required by the semiconductor light emitting element. However, since the density
  • the lower limit of the thickness of the phosphor layer 6 is not particularly limited, but is usually 15 ⁇ m or more, preferably 30 ⁇ m or more. Since the size (particle diameter) of the phosphor particles is usually 10 ⁇ m or more, it may be difficult to make the thickness of the phosphor layer 6 less than 15 ⁇ m.
  • the film thickness of the ceramic layer means the maximum thickness L (see FIG. 1) of the ceramic layer disposed on the upper surface of the LED chip 3.
  • the film thickness of the ceramic layer can be measured using a laser holo gauge.
  • the LED device is 1) a step of preparing an LED chip mounting package 90 including the package 1 and the LED chip 3 (S1 in FIG. 3), and 2) the LED chip 3 is mounted.
  • the phosphor dispersion liquid is applied on the package 1 and dried to arrange the phosphor 10 (S2 in FIG. 3), and 3) disposed on a specific portion including the surface of the LED chip 3.
  • the LED chip mounting package 90 includes the package 1 and the LED chip 3 arranged on the package 1 (see S1 in FIG. 3).
  • the phosphor dispersion liquid is applied on the package 1 including the light emitting surface of the LED chip 3 of the LED chip mounting package 90.
  • the phosphor dispersion liquid contains phosphor particles and a solvent, and may further contain tabular particles, oxide fine particles, aluminum silicate (imogolite), and the like. Since the phosphor particles have a large specific gravity, they tend to settle in the phosphor dispersion liquid, and when the phosphor particles settle, it becomes difficult to apply the phosphor dispersion liquid.
  • the tabular particles and the oxide fine particles can adjust the viscosity of the phosphor dispersion liquid and can suppress the precipitation of the phosphor particles.
  • the types of phosphor particles, tabular particles, and oxide particles are as described above.
  • the phosphor dispersion liquid contains a solvent.
  • the solvent preferably contains an alcohol.
  • the alcohol may be a monohydric alcohol such as methanol, ethanol, propanol, or butanol, or a dihydric or higher polyhydric alcohol. Two or more alcohols may be combined. If a divalent or higher alcohol is used as a solvent, it is easy to increase the viscosity of the phosphor dispersion and to prevent sedimentation of the phosphor particles as the dispersoid.
  • the boiling point of the solvent is preferably 250 ° C. or lower. This is to facilitate drying of the solvent from the phosphor dispersion. If the boiling point is too high, the solvent evaporates slowly, and when the solution is applied to form a coating film, the phosphor flows in the coating film.
  • Any polyhydric alcohol can be used as long as it can be used as a solvent; for example, ethylene glycol, propylene glycol, diethylene glycol, glycerin, 1,3-butanediol, and 1,4-butane. Examples include diols, and ethylene glycol, propylene glycol, 1,3-butanediol, 1,4-butanediol, and the like are preferable.
  • the viscosity of the phosphor dispersion is usually 10 to 1000 cp, preferably 12 to 500 cp, more preferably 20 to 400 cp, and even more preferably 200 to 400 cp.
  • the viscosity is low, the phosphor particles easily settle in the phosphor dispersion liquid, and the time until the supernatant layer is generated is shortened.
  • the viscosity is too low, it is difficult to apply the phosphor dispersion, particularly by spraying.
  • a phosphor dispersion liquid can be prepared by mixing a phosphor with a solvent and adding tabular particles and oxide particles thereto as necessary.
  • a phosphor dispersion liquid is applied on the package including the light emitting surface of the LED chip 3 of the LED chip mounting package 90.
  • the means for application is not particularly limited, and examples thereof include blade application, spin coat application, dispenser application, and spray application. Dispenser application or spray application is preferable. Spray coating is preferable because a thin coating film can be easily formed, and thus a thin phosphor layer can be easily formed.
  • dispenser application the amount of application liquid dropped is controlled while using a nozzle that does not cause nozzle clogging such as phosphor particles.
  • a non-contact jet dispenser manufactured by Musashi Engineering Co. or a dispenser manufactured by the company can be used.
  • FIG. 2 shows an outline of a spray device for applying the phosphor dispersion liquid.
  • the phosphor dispersion liquid 220 in the coating liquid tank 210 in the coating apparatus 200 shown in FIG. 2 is supplied with pressure to the head 240 through the connecting pipe 230.
  • the phosphor dispersion liquid 220 supplied to the head 240 is discharged from the nozzle 250 and applied to the application target (the light emitting surface of the LED chip 3). Discharge of the discharge liquid 270 from the nozzle 250 is performed by wind pressure.
  • An opening that can be freely opened and closed is provided at the tip of the nozzle 250, and the opening may be opened and closed to control on / off of the discharge operation.
  • the phosphor dispersion liquid is applied on the package and further dried to place the phosphor 10 inside the package 1 (see S2 in FIG. 3).
  • a binder precursor means a material that binds a phosphor by undergoing a baking treatment.
  • a typical example of the binder precursor is an organometallic compound that is a ceramic precursor, and the organometallic compound becomes a transparent ceramic (preferably a glass ceramic) through a sol-gel reaction.
  • the produced ceramic combines phosphors (layered silicate minerals, inorganic fine particles, aluminum silicate (imogolite) if necessary) to form a phosphor layer that seals the LED chip.
  • the binder precursor is preferably applied to the phosphor on the LED chip as a solution (binder precursor solution) dissolved in a solvent.
  • the solvent of the binder precursor solution preferably contains alcohols, like the solvent of the phosphor dispersion liquid.
  • organometallic compounds include metal alkoxides, metal acetylacetonates, metal carboxylates, etc., but metal alkoxides that are easily gelled by hydrolysis and polymerization reactions are preferred.
  • metal alkoxides that are easily gelled by hydrolysis and polymerization reactions are preferred.
  • There is no limitation on the type of metal as long as a translucent glass ceramic can be formed. From the viewpoint of the stability of the formed glass ceramic and the ease of production, it is preferable to contain silicon.
  • a plurality of types of organometallic compounds may be combined.
  • the metal alkoxide may be a single molecule such as tetraethoxysilane, or may be a polysiloxane in which an organosiloxane compound is linked in a chain or a ring; however, according to the polysiloxane, the viscosity of the binder precursor solution can be increased. .
  • polysilazane also referred to as silazane oligomer
  • Polysilazane can be represented by the general formula: (R 1 R 2 SiNR 3 ) n .
  • R 1 , R 2 and R 3 each independently represent a hydrogen atom or an alkyl group, an aryl group, a vinyl group or a cycloalkyl group, but at least one of R 1 , R 2 and R 3 is A hydrogen atom, preferably all hydrogen atoms, and n represents an integer of 1 to 60.
  • the molecular shape of polysilazane may be any shape, for example, linear or cyclic.
  • the binder precursor solution may contain a reaction accelerator together with an organometallic compound (particularly polysilazane).
  • the reaction accelerator may be an acid or a base.
  • Specific examples of reaction accelerators include bases such as triethylamine, diethylamine, N, N-diethylethanolamine, N, N-dimethylethanolamine, triethanolamine, triethylamine, hydrochloric acid, oxalic acid, fumaric acid, sulfonic acid, Examples include, but are not limited to, acetic acid, metal carboxylates including nickel, iron, palladium, iridium, platinum, titanium, and aluminum.
  • a particularly preferred reaction accelerator is a metal carboxylate, and the addition amount is preferably 0.01 to 5 mol% based on polysilazane.
  • the concentration of polysilazane in the binder precursor solution is preferably 5 to 50 wt% (mass%).
  • the binder precursor solution When a polysilazane solution is used as the binder precursor solution, it is preferable to apply the binder precursor solution and heat the coating film or irradiate the coating film with light so that the coating film becomes a ceramic film.
  • the temperature for heating the coating film is preferably 150 ° C. to 500 ° C., more preferably 150 ° C. to 350 ° C., from the viewpoint of suppressing the deterioration of the glass material used as the substrate of the LED chip.
  • UVU radiation eg, excimer light
  • heat curing is further performed to further improve the moisture penetration preventing effect. it can.
  • the binder precursor is applied only to the phosphors 10 arranged on the specific part among the phosphors 10 arranged in the package 1.
  • the specific portion includes the surface (upper surface and side surface) of the LED chip 3 and does not include a portion spaced apart from the LED chip 3 by a certain distance.
  • the binder precursor is applied by a dispenser method or an ink jet method. This is because, according to these methods, fine patterning coating of a micro unit is possible.
  • a commercially available apparatus may be used as the inkjet apparatus, and an inkjet apparatus manufactured by Konica Minolta IJ may be used.
  • the binder precursor When the binder precursor is applied, the entire package is heated, and the binder precursor applied to the phosphor 10 disposed on the specific portion is baked to form a binder. That is, the organometallic compound is converted into a transparent ceramic. Thereby, the phosphor particles arranged on the specific part (and oxide fine particles, layered clay mineral particles, alumina silicate, etc. arranged as necessary) are bound and fixed on the specific part. As a result, the phosphor layer 6 is formed on the specific part (see S3 in FIG. 3).
  • the binder precursor solution is not applied to the phosphor 10 arranged in a part other than the specific part in the package 1. Therefore, the fluorescent substance 10 arrange
  • the phosphor layer 6 is formed on the package specific part, and the phosphor 10 that is not fixed on the other part remains (see S3 in FIG. 3).
  • the phosphor 10 remaining on other portions is removed.
  • the removal of the phosphor 10 can be performed by, for example, cleaning or spraying with compressed air. More specifically, the phosphor 10 remaining on the other part may be removed by immersing the package in a solvent.
  • the LED device 100 (see FIG. 1) in which the phosphor layer 6 is formed only on the specific part is obtained.
  • the phosphor layer 6 may be further covered with a protective layer.
  • the protective layer may be formed using a spray device or a dispenser device.
  • the LED device 100 is further provided with other optical components (such as a lens) and used as various optical members.
  • An LED chip mounting package 90 conceptually shown in FIG. 2 was prepared. Specifically, one blue LED chip (in a rectangular parallelepiped shape: 200 ⁇ m ⁇ 300 ⁇ m ⁇ 100 ⁇ m) is flip-chip mounted in the center of a housing portion of a circular package (opening diameter 3 mm, bottom surface diameter 2 mm, wall surface angle 60 °), and LED A chip mounting package was prepared.
  • Yellow phosphor particles were prepared by the following procedure. A mixture obtained by sufficiently mixing phosphor raw materials having the composition shown below was filled in an aluminum crucible, and an appropriate amount of fluoride such as ammonium fluoride was mixed therewith as a flux. The filler is fired in a reducing atmosphere in which hydrogen-containing nitrogen gas is circulated in a temperature range of 1350 to 1450 ° C. for 2 to 5 hours to obtain a fired product ((Y 0.72 Gd 0.24 ) 3 Al 5 O 12 : Ce 0.04 ).
  • a fired product ((Y 0.72 Gd 0.24 ) 3 Al 5 O 12 : Ce 0.04 ).
  • the desired fired product was obtained by pulverizing, washing, separating and drying the obtained fired product.
  • the obtained phosphor was pulverized to obtain phosphor particles having a particle size of about 10 ⁇ m.
  • the composition of the obtained phosphor particles was examined to confirm that it was the desired phosphor. When the emission wavelength with respect to the excitation light having a wavelength of 465 nm was examined, the peak wavelength was approximately 570 nm.
  • the obtained phosphor particles were used in the following comparative examples and examples.
  • the prepared dispersion was applied to the top and side surfaces of the LED chip of the LED chip mounting package using a dispenser.
  • the nozzle inner diameter of the dispenser was 500 ⁇ m.
  • the package was baked at 150 ° C. for 1 hour to obtain an LED device.
  • Example 1 3.0g in isopropyl alcohol, propylene glycol 1.0 g, and the phosphor particles of 1.5g, a silicon oxide 0.07 g (SiO 2 Nippon Aerosil Co. RX300, particle size 7 nm), synthetic mica (Micromica MK-100, manufactured by Co-op Chemical) 0.1 g was mixed to prepare a phosphor dispersion. On the other hand, a binder precursor solution A was prepared.
  • the prepared phosphor dispersion was applied on the package using a spray coating method, and heated at 150 ° C. for 1 hour to arrange the phosphor. Furthermore, the binder precursor solution A was applied only to the upper surface and the side surface of the LED chip using inkjet. After coating, the package was baked at 150 ° C. for 1 hour to fix the phosphor. Thereafter, the package was immersed in isopropyl alcohol to remove phosphors that were not fixed. Then, it dried and obtained the LED device.
  • Example 2 An LED device was obtained in the same manner as in Example 1 except that the binder precursor solution A was applied using a dispenser having a nozzle inner diameter of 50 ⁇ m instead of inkjet.
  • Example 3 An LED device was obtained in the same manner as in Example 1 except that the phosphor dispersion liquid was not applied by spray application but a dispenser having a nozzle inner diameter of 500 ⁇ m.
  • Example 4 An LED device was obtained in the same manner as in Example 1 except that the phosphor dispersion was used with a dispenser having a nozzle inner diameter of 500 ⁇ m, and the binder precursor solution A was used with a dispenser having a nozzle inner diameter of 50 ⁇ m.
  • Color unevenness of light emission from the LED devices obtained in Examples 1 to 4 and Comparative Example 1 was evaluated by the following method.
  • the LED device was caused to emit light, and the color unevenness of light emission (white illumination) was measured using a two-dimensional color luminance meter CA2000 manufactured by Konica Minolta Sensing. Irradiation light can be evaluated two-dimensionally by using a two-dimensional color luminance meter. Color unevenness was evaluated by the chromaticity difference of the chromaticity x value in the obtained irradiation light. A large chromaticity difference means that there is color unevenness in the irradiation light.
  • the LED devices of Examples 1 and 3 in which the binder precursor solution is applied by patterning using an inkjet method may have less color unevenness than the LED devices in Examples 2 and 4 in which the binder precursor solution is applied by patterning with a dispenser. all right.
  • LED devices were produced in the same manner as in Examples 1 to 4, except that the synthetic mica contained in the phosphor dispersion liquid was changed to hydrophilic smectite (Lucentite SWN (manufactured by Corp Chemical Co.)).
  • Example 9 An LED device was produced in the same manner as in Example 1 except that the amount of silicon oxide contained in the phosphor dispersion liquid was 0.15 g and no synthetic mica was added.
  • Example 10 An LED device was produced in the same manner as in Example 1 except that the amount of synthetic mica contained in the phosphor dispersion liquid was 0.15 g and silicon oxide was not added.
  • Example 11 The synthetic mica contained in the phosphor dispersion was changed to hydrophilic smectite (Lucentite SWN (manufactured by Corp Chemical Co.)), and an LED device was produced in the same manner as in Example 1 except that silicon oxide was not added. .
  • the LED devices of Examples 5 and 7 in which the binder precursor solution was applied by patterning using an inkjet method had smaller color unevenness than the LED devices of Examples 6 and 8 in which the same binder precursor solution was applied by patterning with a dispenser. It was.
  • the LED device of the present invention has little variation in emission chromaticity. Therefore, it is useful as a semiconductor light emitting device such as an illumination.

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Abstract

L'invention a pour objectif de placer des corps fluorescents sur un élément DEL, uniquement en des régions requises, c'est-à-dire en des positions sélectionnées sur une puce de DEL. Plus précisément, l'invention concerne un procédé de fabrication de dispositif à DEL, selon lequel sont effectuées : une étape au cours de laquelle les corps fluorescents sont placés par application et séchage d'un liquide de dispersion de corps fluorescents contenant des particules de corps fluorescent, sur une enveloppe sur laquelle la puce de DEL est montée; une étape au cours de laquelle une couche de corps fluorescent est créée par fixation desdits corps fluorescents sur une région spécifique en appliquant et cuisant un précurseur de liant uniquement sur lesdits corps fluorescents placés sur ladite région spécifique incluant la surface de ladite puce de DEL; et une étape au cours de laquelle lesdits corps fluorescents placés sur des régions autres que ladite région spécifique, sont retirés par nettoyage.
PCT/JP2012/006161 2011-09-27 2012-09-26 Procédé de fabrication de dispositif à del Ceased WO2013046674A1 (fr)

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JP2018107351A (ja) * 2016-12-27 2018-07-05 日亜化学工業株式会社 発光装置の製造方法
CN113937203A (zh) * 2021-10-13 2022-01-14 厦门华联电子股份有限公司 一种led芯片的封装覆膜方法

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WO2003034508A1 (fr) * 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
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WO2003034508A1 (fr) * 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
WO2006121197A1 (fr) * 2005-05-12 2006-11-16 Matsushita Electric Industrial Co., Ltd. Dispositif de fabrication d’une couche fluorescente et procédé de fabrication d’une couche fluorescente au moyen du dispositif

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018107351A (ja) * 2016-12-27 2018-07-05 日亜化学工業株式会社 発光装置の製造方法
CN113937203A (zh) * 2021-10-13 2022-01-14 厦门华联电子股份有限公司 一种led芯片的封装覆膜方法
CN113937203B (zh) * 2021-10-13 2023-07-18 厦门华联电子股份有限公司 一种led芯片的封装覆膜方法

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