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WO2012171927A1 - Procédé et système pour fabriquer une cellule solaire cristalline - Google Patents

Procédé et système pour fabriquer une cellule solaire cristalline Download PDF

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Publication number
WO2012171927A1
WO2012171927A1 PCT/EP2012/061138 EP2012061138W WO2012171927A1 WO 2012171927 A1 WO2012171927 A1 WO 2012171927A1 EP 2012061138 W EP2012061138 W EP 2012061138W WO 2012171927 A1 WO2012171927 A1 WO 2012171927A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
metal foil
layer
passivation
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/061138
Other languages
German (de)
English (en)
Inventor
Thomas Wagner
Andreas Letsch
Thomas Kiedrowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of WO2012171927A1 publication Critical patent/WO2012171927A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/123—Spraying molten metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a method for producing a crystalline solar cell, in particular a silicon solar cell, which is formed in and on a semiconductor substrate with an applied passivation or antireflection layer and has a metal-containing contact layer, and an arrangement for carrying out this method.
  • both the front (emitter contact) and the back contact (base contact) are currently manufactured by a screen printing process.
  • the screen printing process consists essentially of two steps.
  • the first step aluminum paste is applied to the front and back.
  • the front contact consists of a so-called grid, which in turn consists of fingers and busbar.
  • the back of the aluminum paste is applied over the entire surface.
  • the paste thus applied is hardened or sintered in a continuous furnace.
  • Aluminum paste is fired by the anti-reflective coating surrounding the silicon. This leads to the conductive connection of silicon with the aluminum base contact. Furthermore, the burn-in serves to produce the back-surface field on the back.
  • the low aspect ratio and the low conductance require an increase in the line cross-section compared to the use of solid material. This leads to increased shading of the photoactive region of the solar cell. A reduction in shading directly increases the efficiency of the solar cell.
  • the invention provides a method with the features of claim 1 and an arrangement with the features of claim 11.
  • the proposed method can be used for the optimization of emitter and base contact in solar cells based on crystalline silicon application. This means that the process chain in the realization of most solar cell concepts, such.
  • B. standard screen printing cell and cells of the types MWT (Metal Wrap-Through), EWT (Emitter Wrap-Through) or IBC (Inter-digitized Back Contact) can be used.
  • a selective removal of the passivation or antireflection layer and / or selective doping of the surface layer and selective spray deposition are carried out at predetermined locations in accordance with a predetermined contact structure pattern.
  • This typically relates to the solar cell front side to be provided with the above-mentioned grid.
  • the removal of the passivation or antireflection layer and / or doping of the surface layer and spray deposition are carried out over the entire substrate surface.
  • the metal foil is melted by laser radiation.
  • the metal foil is locally melted by a laser beam moved relative to it. From a technical point of view, this can basically be achieved with commercially available laser processing equipment.
  • the metal foil is positioned during the reflowing at a machining head held at a predetermined distance over the semiconductor substrate, and in particular the metal foil during the melting is transported relative to the beam of a likewise held on the processing head laser.
  • a spacer is arranged between the semiconductor substrate and the metal foil.
  • a mask with openings which are in particular configured according to a predetermined contact structure pattern, is provided as a spacer.
  • spacer-free guidance of the metal foil to be fused over the substrate by means of a suitably controlled machining head as mentioned above) in conjunction with precise locally controlled fusing / spraying is preferred.
  • the steps of removing the passivation or antireflection layer and / or the doping of a surface layer of the semiconductor substrate and the spray deposition of metal are performed in a single time in a single processing station of a manufacturing plant. This allows the execution of the individual process steps with the required high relative positioning accuracy.
  • Device aspects of the invention will be readily apparent from the method aspects discussed above and will not be described again in this respect.
  • the process steps of removing the passivation or antireflection layer and / or the doping of a surface layer of the semiconductor substrate correspond to suitable components of a production plant; The same applies to the step of spray deposition from a metal foil arranged above the semiconductor substrate.
  • the said components are expediently combined in a processing station in which the semiconductor substrate is held in a predetermined position relative to the metal foil and to a processing head which has a radiation source for melting the metal foil and thereby causing spray deposition of the metal comprising the semiconductor substrate.
  • a radiation source for melting the metal foil and thereby causing spray deposition of the metal comprising the semiconductor substrate.
  • a radiation source a - specially position-controlled - laser is provided.
  • the processing head has Abstandseinsteilstoff for setting a predetermined distance from the surface of the semiconductor substrate and a film holder for holding the metal foil with this predetermined distance.
  • the processing head includes a transport device for transporting the metal foil relative to a processing beam emanating from the radiation source.
  • FIG. 1 is a schematic diagram for explaining an essential procedural step of an embodiment of the invention, a schematic diagram for illustrating essential steps of an embodiment of the proposed method, a schematic cross-sectional view for explaining a method and device aspect of an embodiment of the invention and FIG
  • Fig. 4 is a block diagram for explaining the basic structure of a
  • FIG. 1 shows a schematic diagram of how over a semiconductor substrate 1 a mask layer 3 with an opening 3a and above the mask layer a metal foil 5 is placed.
  • a focused laser beam 7 By means of a focused laser beam 7, a small region 5 a of the metal foil 5 is melted in such a way that a spray mist 5 b is formed within the opening 3 a of the mask 3.
  • metal 5c having a metallization pattern width x given by the width of the opening 3a beats down on the semiconductor substrate 1 and forms there a conductor region (such as a portion of a grid).
  • FIG. 2 illustrates in a schematic cross-sectional view how this principle is realized in the interconnect coating of the semiconductor substrate 1 by means of a quasi-permanent metal strip 5 ', which are transported via two transport rollers 9 through the laser beam 7 guided across the semiconductor substrate.
  • the transport rollers 9 as well as the laser beam 7 generating (not shown) laser housed in a position-controlled machining head 11, the position control is shown symbolically in the figure with an x and a y-axis. Also shown symbolically is that the processing head 11 and with it the metal foil 5 'with a precise let ⁇ specific distance z over the surface of the semiconductor substrate 1 along. This allows process control without a spacer or mask layer applied to the substrate. Since the speed of the tape does not have to match the feed speed, so the thickness of the conductor can be controlled.
  • FIG. 3 schematically shows steps of an embodiment of the production method according to the invention on a solar cell substrate 1, which at the beginning of the relevant process sequence has an emitter layer 1a in the upper main surface (front side) and then a passivation layer 1b.
  • a first processing step S1 the passivation layer 1b is locally removed, as a result of which a regular arrangement of contacting regions 1c is formed.
  • a step S2 doping for reducing the contact resistance with a metallization to be applied later is produced in these contacting regions, as a result of which doped contacting regions 1d are formed.
  • metallization strips le are produced with such positioning, that among them are the doped contacting areas ld. This is shown in the part "section A" of the figure.
  • FIG. 4 schematically shows the structure of a processing station 10, in which the solar cell substrate 1 can be processed in the manner shown in FIG. 3 and which, besides the processing head 11 according to FIG. 2, has a device 13 for removing the local dielectric (the passivation device). or antireflection layer) and a laser doping device 15.
  • the latter contains a dopant source (not shown) and uses to generate the local doping of a laser beam which can be supplied by the same laser, which supplies in the processing head 11 the laser beam 7 used for the local metallization.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé pour fabriquer une cellule solaire cristalline, en particulier une cellule solaire au silicium, qui est formée dans ou sur un substrat semi-conducteur sur lequel est appliqué une couche de passivation ou encore antiréflexion et présente une couche de contact contenant un métal, la couche de contact étant formée, après enlèvement de la couche de passivation ou encore antiréflexion et/ou après dopage d'une couche superficielle du substrat semi-conducteur pour réduire une résistance de contact, par dépôt-pulvérisation de métal pur, d'une feuille métallique plaquée sur le substrat et fondue sur celui-ci.
PCT/EP2012/061138 2011-06-14 2012-06-13 Procédé et système pour fabriquer une cellule solaire cristalline Ceased WO2012171927A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011077450.5 2011-06-14
DE102011077450A DE102011077450A1 (de) 2011-06-14 2011-06-14 Verfahren und Anordnung zur Herstellung einer kristallinen Solarzelle

Publications (1)

Publication Number Publication Date
WO2012171927A1 true WO2012171927A1 (fr) 2012-12-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/061138 Ceased WO2012171927A1 (fr) 2011-06-14 2012-06-13 Procédé et système pour fabriquer une cellule solaire cristalline

Country Status (2)

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DE (1) DE102011077450A1 (fr)
WO (1) WO2012171927A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012212283A1 (de) 2012-07-13 2014-01-16 Robert Bosch Gmbh Verfahren zum Ausbilden einer elektrisch leitenden Schicht auf einem Trägerelement und Verwendung des Verfahrens
DE102013206894A1 (de) 2013-04-17 2014-10-23 Robert Bosch Gmbh Verfahren und Vorrichtung zum Herstellen einer Fotovoltaikzelle
DE102014216634B4 (de) 2014-08-21 2016-06-16 Robert Bosch Gmbh Verfahren und Anordnung zum Ausbilden einer elektrisch leitenden Struktur auf einem Trägerelement und Verwendung des Verfahrens bzw. der Anordnung

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0331022A2 (fr) * 1988-03-01 1989-09-06 Texas Instruments Incorporated Déposition de configuration par radiation
WO1991019827A1 (fr) * 1990-06-21 1991-12-26 Deutsche Forschungsanstalt für Luft- und Raumfahrt e.V. Procede et dispositif d'enduction de substrats
DE4229399A1 (de) * 1992-09-03 1994-03-10 Deutsche Forsch Luft Raumfahrt Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements
US20040250769A1 (en) * 2002-10-28 2004-12-16 Finisar Corporation Pulsed laser deposition for mass production
US20060234163A1 (en) * 2005-04-13 2006-10-19 Lei Zhu Laser-assisted deposition
DE102008057228A1 (de) * 2008-01-17 2009-07-23 Schmid Technology Gmbh Verfahren und Vorrichtung zur Herstellung einer Solarzelle
FR2943180A1 (fr) * 2009-09-08 2010-09-17 Commissariat Energie Atomique Procede de formation d'une cellule photovoltaique avec dopage par laser
EP2243855A1 (fr) * 2009-04-22 2010-10-27 Solmates B.V. Dépôt laser à impulsion avec des masques perforés échangeables
DE102009020774A1 (de) * 2009-05-05 2010-11-11 Universität Stuttgart Verfahren zum Kontaktieren eines Halbleitersubstrates
WO2011060764A2 (fr) * 2009-11-19 2011-05-26 Systaic Cells Gmbh Formation d'émetteur au moyen d'un laser

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0331022A2 (fr) * 1988-03-01 1989-09-06 Texas Instruments Incorporated Déposition de configuration par radiation
WO1991019827A1 (fr) * 1990-06-21 1991-12-26 Deutsche Forschungsanstalt für Luft- und Raumfahrt e.V. Procede et dispositif d'enduction de substrats
DE4229399A1 (de) * 1992-09-03 1994-03-10 Deutsche Forsch Luft Raumfahrt Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements
US20040250769A1 (en) * 2002-10-28 2004-12-16 Finisar Corporation Pulsed laser deposition for mass production
US20060234163A1 (en) * 2005-04-13 2006-10-19 Lei Zhu Laser-assisted deposition
DE102008057228A1 (de) * 2008-01-17 2009-07-23 Schmid Technology Gmbh Verfahren und Vorrichtung zur Herstellung einer Solarzelle
EP2243855A1 (fr) * 2009-04-22 2010-10-27 Solmates B.V. Dépôt laser à impulsion avec des masques perforés échangeables
DE102009020774A1 (de) * 2009-05-05 2010-11-11 Universität Stuttgart Verfahren zum Kontaktieren eines Halbleitersubstrates
FR2943180A1 (fr) * 2009-09-08 2010-09-17 Commissariat Energie Atomique Procede de formation d'une cellule photovoltaique avec dopage par laser
WO2011060764A2 (fr) * 2009-11-19 2011-05-26 Systaic Cells Gmbh Formation d'émetteur au moyen d'un laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MARCU A ET AL: "Pulsed laser deposition of YBCO thin films in a shadow mask configuration", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 360, no. 1-2, 1 February 2000 (2000-02-01), pages 166 - 172, XP004188127, ISSN: 0040-6090, DOI: 10.1016/S0040-6090(99)01083-4 *

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