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WO2011060764A2 - Formation d'émetteur au moyen d'un laser - Google Patents

Formation d'émetteur au moyen d'un laser Download PDF

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Publication number
WO2011060764A2
WO2011060764A2 PCT/DE2010/001344 DE2010001344W WO2011060764A2 WO 2011060764 A2 WO2011060764 A2 WO 2011060764A2 DE 2010001344 W DE2010001344 W DE 2010001344W WO 2011060764 A2 WO2011060764 A2 WO 2011060764A2
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
contact solar
laser
back contact
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2010/001344
Other languages
German (de)
English (en)
Other versions
WO2011060764A3 (fr
Inventor
Peter Grabitz
Gerhard Wahl
Frank Schomann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SYSTAIC CELLS GmbH
Original Assignee
SYSTAIC CELLS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SYSTAIC CELLS GmbH filed Critical SYSTAIC CELLS GmbH
Publication of WO2011060764A2 publication Critical patent/WO2011060764A2/fr
Publication of WO2011060764A3 publication Critical patent/WO2011060764A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a back contact solar cell with an emitter region according to the preamble of claim 1 and to a method for emitter formation with a laser, in particular for producing a back contact solar cell, according to the preamble of claim 6.
  • Conventional solar cells have a front-side contact, that is, a contact disposed on a light-facing surface of the solar cell, and a back-side contact on a surface of the solar cell facing away from the light.
  • the largest volume fraction of a light-absorbing semiconductor substrate is of the same semiconductor type, e.g. p-type contacted by the back contact. This volume fraction is usually referred to as base.
  • base In the area of the surface of the front side of the semiconductor substrate is a thin layer of
  • CONFIRMATION COPY opposite type of semiconductor eg n-type.
  • This layer is commonly referred to as an emitter and the contacts contacting them as emitter contacts.
  • both the base contacts and the emitter contacts lead due to their associated partial shading of the front to a loss of efficiency.
  • corresponding emitter regions must be formed on the rear side of the solar cell.
  • a solar cell in which both emitter regions and base regions are located on the side facing away from the light in use and in which both the emitter contacts and the base contacts are formed on the back, is referred to as a back contact solar cell.
  • a high-temperature step is usually employed.
  • the diffusion of the dopant, generally phosphorus, usually takes place in a diffusion furnace.
  • a "laser doping of solids with a line-focused laser beam and production of solar cell emitters based thereon" (EP 1 738 402 B1) is known, in which a dopant is brought into contact with a surface of a solar cell, then an area by irradiation with a laser The surface of the solar cell is melted, wherein the dopant diffused into it and then recrystallized during the cooling of the molten area.
  • the laser beam is focused in a line focus on the solid.
  • the invention has for its object to provide a back-contact solar cell and a method for producing back-contact solar cells, with the insertion of individual simplifying process steps, the overall yield of production can be increased and a back contactable solar cell is easier to produce.
  • the invention has the advantage that in a conventional method, a further process step is introduced, in which a transparent, with a dopant (eg aluminum or boron) coated substrate, preferably a coated plastic film is brought into contact with the back of a silicon wafer and through Irradiation with a laser thereby locally a dopant is introduced, which forms a pn junction.
  • a transparent, with a dopant eg aluminum or boron
  • a coated plastic film preferably a coated plastic film
  • the base of the silicon for.
  • a laser is used, which is preferably pulsed or provided with a line optics, so that the silicon is not permanently damaged.
  • Etching a raw wafer of monocrystalline or multicrystalline silicon as a substrate which is preferably, but not necessarily provided with an n-type doping.
  • the alkaline or acidic etching process removes the sawing damage from the raw wafer and results in a textured surface with reduced reflection.
  • this step means the formation of a pn junction, in the n-type substrate, it leads to an n +, n front surface field.
  • the passivation layer may be opened locally for the subsequent introduction of the dopant and / or the metallization. This is done with the aid of lasers or local etching by means of screen printing or inkjet processes.
  • a dopant by employing a transparent substrate, preferably a plastic film, which is coated, for example, but not necessarily, with a metal such as aluminum, boron, gallium or indium.
  • This film is brought into contact with the coated side with the backside of the silicon wafer.
  • a laser irradiates the vapor-deposited layer through the film.
  • LIFT method Laser Induced Forward Transfer
  • an optically transparent carrier material with a thin layer of the material to be applied is placed in front of a substrate to be coated.
  • the material to be applied is heated locally by the optically transparent carrier layer so much that it dissolves from the carrier material and deposits on the immediately adjacent substrate.
  • the material heats up so much that it reaches the evaporation point and that the transfer process to the substrate surface is supported and driven by the metal vapor pressure.
  • a metal-coated film is brought into contact with the silicon wafer surface as an alternative to the described LIFT method and then bombarded with a laser from behind through the film so that the metal is thereby blasted from the film and so is driven as a doping layer and not as metallization in the silicon.
  • the film is not brought directly into contact with the silicon wafer, but some ⁇ placed away. As a result, after doping with the laser, the doping of the silicon wafer with the detached metal particles is achieved.
  • the metal of the coating may be silver or else a sequence of different metals, for example titanium, palladium, silver or other metals.
  • Soldering of the contacts by printing an aluminum-silver paste on the edge over the aluminum screen print, which enables soldering of the contacts.
  • furnace processes for drying or sintering of the contacts are to be provided.
  • emitter areas or metallizations are applied completely or at least over a large area, for example, under the screen printing emitters and / or under the screen-printing metallization by means of laser technology.
  • the backside passivation is opened locally before the laser process.
  • the layout for optimizing the series resistance is changed such that the distance of the screen printing lines, the number and the location of the solderable areas; the width, length, spacing and shape of the emitter and contact lines are variable and adaptable to the respective requirements.
  • one or both structures produced by the laser can be galvanically or de-energized.
  • Fig. 1 shows the backside of the wafer after emitter formation.
  • Fig. 2 the back side of the wafer after metallization is shown.
  • Fig. 1 shows the backside of the wafer 1 after emitter formation.
  • the D-lines 2 consist of the locally driven dopant, z. As aluminum.
  • the M-lines 3 represent the laser-transferred metal from the foil, e.g. Silver.
  • the D-lines 2 represent the emitter (for example aluminum)
  • the M-lines 3 the laser metallization, which are connected by M-screen-printing fingers 7 to the contact bar 5 at the edge.
  • a silver / aluminum bar 6 is used for the solderable contacting of the emitter, which in turn is connected by D- Siebdruckfinger 8 with the lasered emitter regions.
  • the individual back contact solar cells can be connected together to form a string.
  • Dopant e.g. aluminum

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une pile solaire à contact arrière (4) et un procédé pour réaliser une pile solaire à contact arrière (4), une étape de traitement supplémentaire consistant à mettre en contact un substrat transparent avec le côté arrière d'une tranche de silicium, à introduire un agent de dopage localement par application d'un laser, puis à mettre en contact la base du silicium de type n à l'aide d'un film recouvert de métal et d'un autre traitement laser.
PCT/DE2010/001344 2009-11-19 2010-11-19 Formation d'émetteur au moyen d'un laser Ceased WO2011060764A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009053776A DE102009053776A1 (de) 2009-11-19 2009-11-19 Emitterbildung mit einem Laser
DE102009053776.7 2009-11-19

Publications (2)

Publication Number Publication Date
WO2011060764A2 true WO2011060764A2 (fr) 2011-05-26
WO2011060764A3 WO2011060764A3 (fr) 2012-02-02

Family

ID=43877159

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2010/001344 Ceased WO2011060764A2 (fr) 2009-11-19 2010-11-19 Formation d'émetteur au moyen d'un laser

Country Status (2)

Country Link
DE (1) DE102009053776A1 (fr)
WO (1) WO2011060764A2 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012171927A1 (fr) * 2011-06-14 2012-12-20 Robert Bosch Gmbh Procédé et système pour fabriquer une cellule solaire cristalline
CN103413860A (zh) * 2013-07-17 2013-11-27 湖南红太阳光电科技有限公司 一种局域背面钝化晶体硅电池的制备方法
WO2014124675A1 (fr) * 2013-02-14 2014-08-21 Universität Konstanz Cellule solaire à contact arrière, sans barre omnibus, procédé de fabrication et module solaire présentant ces cellules solaires
CN104282771A (zh) * 2013-07-09 2015-01-14 英稳达科技股份有限公司 背面接触型太阳能电池
WO2016011140A1 (fr) * 2014-07-15 2016-01-21 Natcore Technology, Inc. Cellules solaires à contact arrière interdigité (ibc) transférées par laser
CN105914249A (zh) * 2016-06-27 2016-08-31 泰州乐叶光伏科技有限公司 全背电极接触晶硅太阳能电池结构及其制备方法
CN106653881A (zh) * 2017-02-24 2017-05-10 泰州中来光电科技有限公司 一种背接触太阳能电池串及其制备方法和组件、系统
WO2018157821A1 (fr) * 2017-03-03 2018-09-07 广东爱旭科技股份有限公司 Cellule solaire bifaciale du type perc de type p, son ensemble, son système et son procédé de préparation
WO2018157498A1 (fr) * 2017-03-03 2018-09-07 广东爱康太阳能科技有限公司 Cellule solaire perc de type p à double face et module et système associés, et procédé de préparation de celle-ci
CN111524797A (zh) * 2020-04-26 2020-08-11 泰州中来光电科技有限公司 一种选择性发射极的制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011015283B4 (de) * 2011-03-28 2013-03-07 Bayerisches Zentrum für Angewandte Energieforschung e.V. Herstellung eines Halbleiter-Bauelements durch Laser-unterstütztes Bonden und damit hergestelltes Halbleiter-Bauelement
DE102012003866B4 (de) 2012-02-23 2013-07-25 Universität Stuttgart Verfahren zum Kontaktieren eines Halbleitersubstrates, insbesondere zum Kontaktieren von Solarzellen, sowie Solarzellen
DE102012214254A1 (de) * 2012-08-10 2014-05-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laserbasiertes Verfahren und Bearbeitungstisch zur lokalen Kontaktierung eines Halbleiterbauelements
EP2709162A1 (fr) * 2012-09-13 2014-03-19 Roth & Rau AG Cellule photovoltaïque et module de cellule photovoltaïque reposant sur celle-ci

Citations (2)

* Cited by examiner, † Cited by third party
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DE102006044936B4 (de) 2006-09-22 2008-08-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Metallisierung von Solarzellen und dessen Verwendung
EP1738402B1 (fr) 2004-07-26 2008-09-17 Jürgen H. Werner Dopage laser d'elements solides au moyen d'un faisceau laser a focalisation lineaire et fabrication d'emetteurs de cellules solaires basee sur ce procede

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008103293A1 (fr) * 2007-02-16 2008-08-28 Nanogram Corporation Structures de pile solaire, modules photovoltaïques, et procédés correspondants
DE102007010872A1 (de) * 2007-03-06 2008-09-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung
DE102008057228A1 (de) * 2008-01-17 2009-07-23 Schmid Technology Gmbh Verfahren und Vorrichtung zur Herstellung einer Solarzelle

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1738402B1 (fr) 2004-07-26 2008-09-17 Jürgen H. Werner Dopage laser d'elements solides au moyen d'un faisceau laser a focalisation lineaire et fabrication d'emetteurs de cellules solaires basee sur ce procede
DE102006044936B4 (de) 2006-09-22 2008-08-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Metallisierung von Solarzellen und dessen Verwendung

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012171927A1 (fr) * 2011-06-14 2012-12-20 Robert Bosch Gmbh Procédé et système pour fabriquer une cellule solaire cristalline
WO2014124675A1 (fr) * 2013-02-14 2014-08-21 Universität Konstanz Cellule solaire à contact arrière, sans barre omnibus, procédé de fabrication et module solaire présentant ces cellules solaires
CN104282771A (zh) * 2013-07-09 2015-01-14 英稳达科技股份有限公司 背面接触型太阳能电池
CN103413860A (zh) * 2013-07-17 2013-11-27 湖南红太阳光电科技有限公司 一种局域背面钝化晶体硅电池的制备方法
US9570638B2 (en) 2014-07-15 2017-02-14 Natcore Technology, Inc. Laser-transferred IBC solar cells
WO2016011140A1 (fr) * 2014-07-15 2016-01-21 Natcore Technology, Inc. Cellules solaires à contact arrière interdigité (ibc) transférées par laser
CN106687617A (zh) * 2014-07-15 2017-05-17 奈特考尔技术公司 激光转印ibc太阳能电池
CN106687617B (zh) * 2014-07-15 2020-04-07 奈特考尔技术公司 激光转印ibc太阳能电池
CN105914249A (zh) * 2016-06-27 2016-08-31 泰州乐叶光伏科技有限公司 全背电极接触晶硅太阳能电池结构及其制备方法
CN106653881A (zh) * 2017-02-24 2017-05-10 泰州中来光电科技有限公司 一种背接触太阳能电池串及其制备方法和组件、系统
CN106653881B (zh) * 2017-02-24 2018-12-25 泰州中来光电科技有限公司 一种背接触太阳能电池串及其制备方法和组件、系统
WO2018157821A1 (fr) * 2017-03-03 2018-09-07 广东爱旭科技股份有限公司 Cellule solaire bifaciale du type perc de type p, son ensemble, son système et son procédé de préparation
WO2018157498A1 (fr) * 2017-03-03 2018-09-07 广东爱康太阳能科技有限公司 Cellule solaire perc de type p à double face et module et système associés, et procédé de préparation de celle-ci
CN111524797A (zh) * 2020-04-26 2020-08-11 泰州中来光电科技有限公司 一种选择性发射极的制备方法

Also Published As

Publication number Publication date
WO2011060764A3 (fr) 2012-02-02
DE102009053776A1 (de) 2011-06-01

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