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WO2012031608A1 - Procédé pour la fabrication d'une cellule solaire en contact de côté arrière - Google Patents

Procédé pour la fabrication d'une cellule solaire en contact de côté arrière Download PDF

Info

Publication number
WO2012031608A1
WO2012031608A1 PCT/EP2010/005471 EP2010005471W WO2012031608A1 WO 2012031608 A1 WO2012031608 A1 WO 2012031608A1 EP 2010005471 W EP2010005471 W EP 2010005471W WO 2012031608 A1 WO2012031608 A1 WO 2012031608A1
Authority
WO
WIPO (PCT)
Prior art keywords
rear side
via holes
takes place
emitter
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/005471
Other languages
English (en)
Inventor
Daniel Kray
Holger KÜHNLEIN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rena GmbH
Original Assignee
Rena GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rena GmbH filed Critical Rena GmbH
Priority to EP10814719.0A priority Critical patent/EP2614533A1/fr
Priority to PCT/EP2010/005471 priority patent/WO2012031608A1/fr
Priority to TW099139115A priority patent/TW201212266A/zh
Priority to PCT/EP2011/003817 priority patent/WO2012031649A1/fr
Priority to TW100128756A priority patent/TW201214744A/zh
Publication of WO2012031608A1 publication Critical patent/WO2012031608A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for the fabrication of a solar cell with fired rear side contacts, and to a cell manufactured with such a method.
  • the invention relates to a method for the fabrication of a solar cell with fired rear side contacts and with via holes perforating the cell for the contacting of a front side located emitter layer from rear side located busbars.
  • Solar cells have two sides: a front side which is directed versus the light, and a rear side which usually has an at least partially metallized surface. Between these sides, a stack of different layers is present which perform different tasks, such as anti-reflection layers, a layer which collects the light, a p- n-junction with a space-charge layer, and contact layers for establishing contact to the exterior of the solar cell. Commonly, one can distinguish between front and rear side contacts, wherein the front side contacts are connected to the emitter layer, and the rear side contacts are connected to the substrate bulk. To collect the electric charge carriers on the front side, narrow so called fingers are arranged side by side which are connected by so called busbars. The latter provide solder areas onto which external wires can be soldered.
  • a solution to this is to provide via holes that connect the metal of a multitude of front sided fingers to a busbar that is located on the rear side. Such cells are called metal wrap through cells, or M T cells.
  • An alternative solution does not even provide front side fingers, but a high number of closely spaced via holes that have semi-conducting side walls, thus serving as means for connecting the front with the rear side. Since these holes are doped and thus conducting, such cells are called emitter wrap through cells, or EWT cells.
  • EWT cells emitter wrap through cells
  • the object of the invention is therefore to provide a method for the fabrication of a solar cell with fired rear side contacts and with via holes perforating the cell avoiding the disadvantages of the state of the art.
  • the method should reduce the effort of adapting a fabrication process from substrates without to substrates with via holes.
  • the process should further achieve a better controllability of the geometry of possibly present narrow fingers, and improve the conductivity particularly of both front side fingers and/or metal wrap though via holes.
  • the number of process steps, and in particular, the number of process steps with already perforated substrates, should be reduced.
  • the method according to the invention serves for the fabrication of a solar cell with fired rear side contacts and with via holes perforating the cell.
  • a synonymous term for such a cell is "rear side contacted solar cell with fired contacts”.
  • the introduction of the via holes takes place subsequent to the firing of the contacts.
  • This substrate typically consists of silicon; however, other materials, in particular glass, ceramics, and plastics can serve as a substrate material .
  • This layer can develop during the doping step.
  • the metallization is usually performed by screen printing.
  • the contacts for n-type areas usually consist of silver (Ag) , the ones for the p-type solder areas of silver-aluminium (AgAl), and the p-type areas of aluminium (Al).
  • Firing of the contacts Firing is performed on the still wet or partially dry, but brittle paste, in order to solidify the same. Typical temperatures range between 800 to 900°C. A possibly present passivation layer is opened by ingredients of the fired paste, thus allowing for a direct electric contact between the bulk material and the metallic contacts.
  • Performing an edge isolation at least on the rear side This step can be performed using dry or wet techniques. When using wet techniques, the step is usually carried out between the doping and the passivating step, whereas dry techniques are suitable also after subsequent processing steps, such as screen printing, or even as a finalizing step. Edge isolation is commonly performed using lasers.
  • the via holes are introduced into the substrate in a very early stage, i.e. prior to the aforementioned step (b) .
  • all subsequent steps are carried out on perforated substrates, with the above described disadvantages.
  • the process of introducing the via holes is now performed at a much later stage, i.e. after firing of the contacts.
  • most, if not all, of the aforementioned steps (a) to (h) are carried out on standard, i.e. non-perforated substrates.
  • An adaption of these process steps is not applicable any more, or of minor scale.
  • the breakage rate of the usually fragile substrate is significantly reduced.
  • a further advantage is that the use of a so-called selective emitter is now easily achievable.
  • a selective emitter is characterized in that the area which is reserved for the metallic contact, e.g. to the fingers, is highly doped, thus providing a low sheet resistance (e.g. 20 Ohms/square) and a good metal- silicon contact, and the remaining area that represents the illuminated surface of the solar cell is doped less, thus providing a higher sheet resistance (e.g. 120 Ohms/square) and lower recombination.
  • the selective emitter is manufactured prior to the introduction of the holes, making it possible to more easily fabricate solar cells, in particular MWT cells, with via holes and selective emitters. This in turn increases cell efficiency.
  • the techniques of liquid jet-guided laser processing are preferably being used, which are described in more detail later on.
  • LCP laser chemical processing
  • both techniques are using dopant source containing liquids.
  • LCP which also can be referred to and described as "liquid jet guided laser processing" uses a laser beam which is coupled into and guided by a liquid jet.
  • the laser provides energy which primarily serves for melting and ablation of the surface it is directed onto. It might also deliver energy which is necessary for, or enhances, a chemical reaction.
  • the liquid itself contains ingredients which chemically interact during laser irradiation with the surface it is directed onto. Typical liquids are water (oxidizing characteristics on certain materials), or dopant- containing liquids, so that e.g. a via hole can be drilled and doped at the same time. Since the laser interacts differently with different materials, it is unproblematic to e.g. stop drilling when reaching a previously fabricated metal layer, e.g. the rear side contact of the via hole. However, depending on the concrete subsequent process steps, such a via hole might even be drilled all the way through the substrate and the contact, and still provide electrical contact to the front side located emitter.
  • An alternative "dry” technique uses a laser beam as well which is not guided by a liquid jet, but directly hits the surface to be treated.
  • a thin liquid layer containing the necessary chemical ingredients such as the dopant is applied onto the surface during laser treatment or prior to the same, thus enabling drying before actual laser irradiation.
  • Phosphoric acid (H3PO4) can advantageously be used as such a liquid .
  • the goal of both techniques is to open a possibly present passivation layer for further processing involving metallization, and to simultaneously modify the thus exposed surface.
  • the aforementioned LCP processing and doping which is performed on the via holes is preferably used for the front side opening of a passivation layer, combined with local doping, for these front side fingers .
  • a metallization of the via holes takes place by means of light induced plating (LIP) or electroless plating.
  • LIP light induced plating
  • this metallization method is advantageously used for optionally present front side fingers.
  • Electroless plating does not use an external current and can also be used to plate or reinforce conductive structures of a solar cell .
  • the quality and controllability of the geometry of the metallic structures is far superior to the one which is achievable using pastes.
  • the use of screen printing in the production process can not be entirely omitted, the number of screen printing steps is significantly reduced.
  • the first and the fourth step can be omitted, not only resulting in a better product quality due to a higher conductivity, but also in a saving of partially silver- containing and thus costly paste.
  • the high conductivity of the plated via holes results in a very advantageous reduction of the necessary hole distribution density over the cell surface.
  • At least an edge isolation step to be performed on the rear side takes place by means of liquid jet guided laser or other, e.g. dry, laser processing.
  • Edge isolation is necessary in order to prevent shunts between conductive areas of different polarity, such as the anode and the cathode of the solar cell, i.e. the front side emitter and the back side contact. If the emitter fabrication, described in step (c) above, is carried out onto the entire surface of the cell, the conductive layer covers not only the front and the rear side, but also the edges. Therefore, edge isolation is necessary. Additionally, other isolating steps that are necessary can be performed preferably using LCP or dry laser processing, for example an edge isolation step on the front side, or a contact isolation step between rear side emitter and base areas.
  • Typical liquids for this process step are water (H 2 0) or oxidizing liquids.
  • the edge isolation is performed using wet chemical etching instead of LCP, and emitter stripes are left on the rear side, onto which an emitter-busbar metallization subsequently takes place.
  • the stripes area can be accordingly masked so that only the area outside the stripes is opened, and the stripes area is left covered by the emitter diffusion .
  • the metallized via holes are directly being used as solder pads for the emitter contacts for the module production.
  • No additional emitter-busbar metallization is performed on the rear side. This means that no emitter fingers and/or emitter busbars are present on the rear side, but the metallized emitter via holes are directly soldered to the interconnection tab.
  • the module back sheet can feature solder bumps that the cells, respectively the via holes, are aligned to. Subsequently, the solder bumps on the module back sheet are soldered to the metallized via holes and the cell interconnection is achieved.
  • the advantage here is that less material and less production steps must be performed on the cell rear side, lowering the cost of the cell.
  • a controlled back etching of the emitter takes place after the step of doping by diffusion for emitter generation as described above as step (c) in order to increase the sheet resistance.
  • This optional step helps also to improve the blue sensitivity and reduce surface recombination effects, since a highly doped surface region (dead layer) is removed. Therefore, back etching enhances the cell efficiency.
  • Back etching can be performed by e.g. a hydrofluoric acid / nitric acid (HF-HN0 3 ) solution, or by reactive ion etching (RIE) techniques.
  • rear side polishing is performed before a usually present front side passivation.
  • This step is advantageously performed directly after the optional etch back step, or after the diffusion step, if no such etch back is performed. Polishing results in a smoother surface and helps to reduce recombination losses.
  • a passivating of the rear side of the cell takes place. This takes place in addition to or instead of the aforementioned step (e) which refers to only the front side so far. However, if also a passivating of the front side takes place, it is advantageous to carry out the rear side passivating step directly before or after the step (e) . It is also possible to perform both steps at once, i.e. a passivating of the entire substrate, e.g. by dipping it into a proper solution, or by using PECVD (plasma-enhanced chemical vapour deposition) . Possible layer materials can be e.g.
  • an opening of the rear side passivation layer takes place by means of LCP. Since the process is preferably used for the edge isolation as described above, both steps can advantageously be performed by the same technique. According liquids are water or liquids containing doping agents. Subsequent to this step, the rear side metallization takes place.
  • a further advantage of LCP instead of dry laser opening is the avoidance of dust that otherwise might develop during ablation. Summing up, LCP is preferred not only for edge isolation, but also for the opening of areas which are later on metallized (i.e. screen printed or plated) for the production of busbars.
  • the subsequent rear side metallization takes place by means of screen printing or LIP.
  • “subsequent” refers to the previously carried out step of opening the passivation layer either by wet etching or LCP.
  • the rear side metallization takes place by means of screen printing and is followed by through-firing of the passivation layer without separate opening of the same.
  • the opening of the passivation layer takes place by means of the through-firing itself.
  • a finalizing temperature treatment in an inert or reducing atmosphere takes place.
  • temperatures between 100 to 500°C, and treatment times from 0.5 to 30 minutes are preferably used.
  • the atmosphere advantageously consists of pure nitrogen (N 2 ), or of a forming gas such as 4% hydrogen in nitrogen.
  • the invention further relates to a metal wrap through (MWT) or emitter wrap through (EWT) solar cell with fired contacts and with via holes perforating the cell, wherein the cell is characterized by a void-free, pure and smooth metallic layer on at least the walls of the via holes.
  • the invention relates to such a cell which is obtained by and/or obtainable by a method as defined above.
  • the present invention solves a number of problems known from the art.
  • the method according to the invention reduces the effort of adapting a fabrication process from substrates without to substrates with via holes, since the introduction of holes takes place at a very late stage during the production of the cell.
  • the process achieves a better controllability of the geometry of possibly present narrow fingers, since it allows to substitute of some of the common screen printing steps with LIP. It also improves the conductivity particularly of both front side fingers and/or metal wrap though via holes.
  • the number of process steps, and in particular, the number of process steps with already perforated substrates, is significantly reduced.

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  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un procédé pour la fabrication d'une cellule solaire qui comporte des contacts cuits de côté arrière et des orifices d'interconnexion qui perforent la cellule pour la mise en contact d'une couche émettrice positionnée sur le côté avant à partir de barres omnibus positionnées sur le côté arrière. Selon l'invention, l'introduction des orifices d'interconnexion a lieu après la cuisson des contacts. De préférence, le traitement comprend des étapes de traitement laser guidé par jet liquide, de dopage laser à sec, et/ou de dépôt métallique provoqué par lumière. En outre, l'invention décrit une cellule solaire MWT (« metal wrap through ») ou EWT (« emitter wrap through ») comportant des contacts cuits de côté arrière et des orifices d'interconnexion, obtenue particulièrement selon le procédé de l'invention, la cellule comportant une couche métallique lisse, pure et dépourvue de vide sur au moins les parois des orifices d'interconnexion.
PCT/EP2010/005471 2010-09-07 2010-09-07 Procédé pour la fabrication d'une cellule solaire en contact de côté arrière Ceased WO2012031608A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP10814719.0A EP2614533A1 (fr) 2010-09-07 2010-09-07 Procédé pour la fabrication d'une cellule solaire en contact de côté arrière
PCT/EP2010/005471 WO2012031608A1 (fr) 2010-09-07 2010-09-07 Procédé pour la fabrication d'une cellule solaire en contact de côté arrière
TW099139115A TW201212266A (en) 2010-09-07 2010-11-12 Method for the fabrication of a rear side contacted solar cell
PCT/EP2011/003817 WO2012031649A1 (fr) 2010-09-07 2011-07-29 Procédé de fabrication d'une cellule solaire à contact en face arrière
TW100128756A TW201214744A (en) 2010-09-07 2011-08-11 Method for the production of a rear side contacted solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2010/005471 WO2012031608A1 (fr) 2010-09-07 2010-09-07 Procédé pour la fabrication d'une cellule solaire en contact de côté arrière

Publications (1)

Publication Number Publication Date
WO2012031608A1 true WO2012031608A1 (fr) 2012-03-15

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Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/EP2010/005471 Ceased WO2012031608A1 (fr) 2010-09-07 2010-09-07 Procédé pour la fabrication d'une cellule solaire en contact de côté arrière
PCT/EP2011/003817 Ceased WO2012031649A1 (fr) 2010-09-07 2011-07-29 Procédé de fabrication d'une cellule solaire à contact en face arrière

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/003817 Ceased WO2012031649A1 (fr) 2010-09-07 2011-07-29 Procédé de fabrication d'une cellule solaire à contact en face arrière

Country Status (3)

Country Link
EP (1) EP2614533A1 (fr)
TW (2) TW201212266A (fr)
WO (2) WO2012031608A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2898538A1 (fr) * 2012-09-21 2015-07-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Cellule solaire photovoltaïque et procédé de fabrication d'une cellule solaire photovoltaïque
EP4053920A1 (fr) * 2021-03-02 2022-09-07 AZUR SPACE Solar Power GmbH Agencement de contact de cellules solaires

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI478369B (zh) * 2012-09-04 2015-03-21 Motech Ind Inc 太陽能電池的製造方法
GB2508792A (en) 2012-09-11 2014-06-18 Rec Modules Pte Ltd Back contact solar cell cell interconnection arrangements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
WO2007085452A1 (fr) * 2006-01-25 2007-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Procédé et dispositif d'usinage de précision de substrats au moyen d'un laser introduit dans un jet de liquide et application dudit procédé

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2898538A1 (fr) * 2012-09-21 2015-07-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Cellule solaire photovoltaïque et procédé de fabrication d'une cellule solaire photovoltaïque
EP4053920A1 (fr) * 2021-03-02 2022-09-07 AZUR SPACE Solar Power GmbH Agencement de contact de cellules solaires

Also Published As

Publication number Publication date
WO2012031649A1 (fr) 2012-03-15
TW201212266A (en) 2012-03-16
TW201214744A (en) 2012-04-01
EP2614533A1 (fr) 2013-07-17

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