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WO2012017703A1 - Procédé de production d'un dispositif de conversion photoélectrique - Google Patents

Procédé de production d'un dispositif de conversion photoélectrique Download PDF

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Publication number
WO2012017703A1
WO2012017703A1 PCT/JP2011/057055 JP2011057055W WO2012017703A1 WO 2012017703 A1 WO2012017703 A1 WO 2012017703A1 JP 2011057055 W JP2011057055 W JP 2011057055W WO 2012017703 A1 WO2012017703 A1 WO 2012017703A1
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Prior art keywords
layer
photoelectric conversion
laser
power generation
conversion device
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English (en)
Japanese (ja)
Inventor
晋作 山口
恵右 仲村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for manufacturing a photoelectric conversion device by laser patterning.
  • thin-film silicon solar cells use a transparent substrate and are composed of a transparent conductive layer, a multi-junction layer (photoelectric conversion layer, conductive type layer, intermediate layer), and a back-surface reflective electrode layer, and form a series connection by laser patterning. Then create a module. Crystal silicon solar cells are classified into polycrystalline and single crystal systems, and further thin film silicon laminated single crystal systems.
  • laser patterning is performed after forming a transparent conductive layer, after forming a multi-junction layer, after forming a back-surface reflective electrode layer, and before removing the film from the outer periphery of the panel. . That is, laser patterning is performed a plurality of times in the manufacturing process of the photoelectric conversion device. In any of these laser patterning processes, defects are generated in the constituent layers around the patterning portion by heat energy and light energy derived from laser light. After each patterning, cleaning is performed to remove residues generated in the processing unit. Laser processing of crystalline silicon solar cells is used for edge isolation for doping layer separation, through electrode formation for back contact, buried electrode formation for shadow loss reduction, and the like.
  • Patent Document 1 when the method of Patent Document 1 is applied to the manufacture of thin film solar cells or crystalline solar cells, residue removal and defect passivation are performed individually each time laser patterning is performed, which increases the number of processes. There was a problem.
  • the present invention has been made in view of the above, and an object of the present invention is to obtain a method for manufacturing a photoelectric conversion device capable of manufacturing a photoelectric conversion device excellent in photoelectric conversion characteristics without increasing the number of steps.
  • the present invention provides a solution having a property of inactivating defects in a power generation layer material that performs photoelectric conversion in a silicon processing step using a laser in a silicon solar cell manufacturing process. Is supplied to the processing portion by the laser to remove residues generated by the processing by the laser.
  • the passivation effect by the processing solution reduces the defect level of the patterning portion and the entire constituent film and improves the solar cell characteristics, and the number of steps can be reduced by unifying the patterning step, the residue removal step, and the patterning step. There is an effect that it can be reduced.
  • FIG. 1 is a diagram illustrating a configuration of a multi-junction photoelectric conversion device manufactured by a method for manufacturing a photoelectric conversion device according to an embodiment of the present invention.
  • FIG. 2 is a diagram illustrating a layer configuration in the power generation region.
  • FIG. 3 is a flowchart showing a flow of a manufacturing method of the photoelectric conversion device according to the present embodiment.
  • FIG. 4 is a process diagram of a method for manufacturing a photoelectric conversion device.
  • FIG. 5 is a cross-sectional view of a multi-junction photoelectric conversion device that is performing laser patterning.
  • FIG. 1 is a diagram illustrating a configuration of a multi-junction photoelectric conversion device manufactured by a method for manufacturing a photoelectric conversion device according to an embodiment of the present invention.
  • FIG. 2 is a diagram illustrating a layer configuration in the power generation region.
  • FIG. 3 is a flowchart showing a flow of a manufacturing method of the photoelectric conversion device according to the present embodiment.
  • FIG. 6 is a diagram showing a state in which processing is performed by irradiating a laser beam while holding the light-transmitting substrate so that the film surface is in contact with the processing solution in the processing solution immersion tank containing the processing solution.
  • FIG. 7 is a diagram showing a configuration of a crystalline solar cell manufactured by the method for manufacturing a photoelectric conversion device according to the embodiment of the present invention.
  • FIG. 8 is a diagram illustrating characteristics of the multi-junction photoelectric conversion devices formed in Example 1, Example 2, Example 3, Comparative Example 1, and Comparative Example 2.
  • FIG. 1 is a diagram showing a configuration of a thin-film silicon solar cell manufactured by a method for manufacturing a photoelectric conversion device according to an embodiment of the present invention.
  • FIG. 1 illustration of a sealing material and a back seat
  • the thin-film silicon solar cell is provided with a plurality of photoelectric conversion cells 10 having a structure in which a transparent conductive layer 2, a power generation layer 3, and a back surface reflective electrode layer 4 are sequentially laminated on a translucent substrate 1.
  • a first separation groove 11 in which the transparent conductive layer 2 does not exist is provided between the photoelectric conversion cells 10. Moreover, on the photoelectric conversion cell 10, the connection groove
  • the back surface reflective electrode layer 4 in the non-power generation region 20 and the back surface reflective electrode layer 4 in the power generation region 30 are electrically separated by the second separation groove 13.
  • the transparent conductive layer 2 of a certain photoelectric conversion cell 10 is electrically connected to the back surface reflective electrode layer 4 of another adjacent photoelectric conversion cell via the back surface reflective electrode layer 4 formed in the connection groove 12 and the first separation groove 11. Connected.
  • FIG. 2 shows a layer structure in the power generation region 30.
  • the light-transmitting substrate 1 a glass substrate, a light-transmitting resin having heat resistance such as polyimide or polyvinyl, or a laminate thereof can be used as appropriate.
  • the material is not limited to a specific material as long as it can be supported.
  • the transparent conductive layer 2 as the first electrode layer is made of a translucent conductive material.
  • tin oxide (SnO 2 ), zinc oxide (ZnO), indium oxide (In 2 O 3 ), or the like can be used.
  • the transparent conductive layer 2 is formed using a known film formation method such as a CVD method, a sputtering method, or a vapor deposition method.
  • the power generation layer 3 includes a photoelectric conversion layer 31, an intermediate layer 32, a photoelectric conversion layer 33, and a back side transparent conductive layer 34.
  • the power generation layer 3 is formed using a known method such as a CVD method.
  • a typical material for the power generation layer 3 is a semiconductor material (such as amorphous silicon, microcrystalline silicon, amorphous silicon germanium, or microcrystalline silicon germanium) containing silicon as a main component.
  • the photoelectric conversion layers 31 and 33 have pin junctions, and photoelectrically convert incident light to generate photovoltaic power. That is, the photoelectric conversion layers 31 and 33 are structural units (unit power generation layers) that generate photovoltaic power. Therefore, the power generation layer 3 has a multi-junction structure in which a plurality of photoelectric conversion layers 31 and 33 as unit power generation layers are stacked via an intermediate layer 32 made of a transparent conductive film.
  • the photoelectric conversion layer 31 has a configuration in which a front-side conductive type layer 31a, an intrinsic semiconductor layer 31b, and a back-side conductive type layer 31c are stacked in this order from the translucent substrate 1 side.
  • the photoelectric conversion layer 33 has a configuration in which a front-side conductive type layer 33a, an intrinsic semiconductor layer 33b, and a back-side conductive type layer 33c are stacked in this order from the light-transmitting substrate 1 side.
  • the photoelectric conversion layer 31 is preferably formed using a material having a relatively wide band gap, for example, amorphous silicon.
  • the photoelectric conversion layer 33 is preferably formed using a material having a relatively narrow band gap, for example, microcrystalline silicon or microcrystalline silicon germanium.
  • the intermediate layer 32 is a thin film having a low refractive index, a light transmittance or a high reflectance for a desired wavelength, and a conductivity. That is, the intermediate layer 32 reflects light having a shorter wavelength than the predetermined wavelength to the photoelectric conversion layer 31 on the translucent substrate 1 side, and transmits light having a longer wavelength than the predetermined wavelength to the back surface reflective electrode layer 4 side. The light is transmitted through a certain photoelectric conversion layer 33. Thereby, the intermediate layer 32 has an effect of confining light having a shorter wavelength than the predetermined wavelength in the photoelectric conversion layer 31.
  • the back side transparent conductive layer 34 is responsible for carrier conduction between the photoelectric conversion layer 33 and the back surface reflective electrode layer 4.
  • the power generation layer 3 has a configuration including the photoelectric conversion layers 31 and 33 having pin junctions.
  • the power generation layer 3 has at least one pair of pn junctions or pin junctions and receives incident light.
  • Any semiconductor layer may be used as long as it is formed by stacking two or more photoelectric conversion layers that generate photovoltaic power by photoelectric conversion, and is not limited to the above-described configuration.
  • an intermediate layer may be provided between all the photoelectric conversion layers, or an intermediate layer may be provided only between some of the photoelectric conversion layers. Furthermore, a configuration in which the intermediate layer is omitted is also possible.
  • the back surface reflective electrode layer 4 as the second electrode layer functions as a back surface electrode, and also functions as a reflective layer that reflects light that has not been absorbed by the power generation layer 3 and returns it to the power generation layer 3 again. Contributes to improvement. Therefore, it is preferable that the back surface reflective electrode layer 4 has a high light reflectance and electrical conductivity.
  • the back surface reflective electrode layer 4 can be formed of a metal material such as silver (Ag), aluminum (Al), or copper (Cu).
  • the back surface reflective electrode layer 4 is formed using well-known methods, such as a vapor deposition method and sputtering method.
  • FIG. 3 is a flowchart showing a flow of a manufacturing method of the photoelectric conversion device according to the present embodiment.
  • FIG. 4 is a process diagram of a method for manufacturing a photoelectric conversion device.
  • the translucent substrate 1 is cleaned (step S1 in FIG. 3, FIG. 4A).
  • the transparent conductive layer 2 is formed on the surface of the translucent substrate 1 (step S2 in FIG. 3, FIG. 4B).
  • laser patterning is performed by irradiating a laser from the transparent conductive layer 2 side, and a part of the transparent conductive layer 2 is removed (step S3 in FIG. 3, FIG. 4C).
  • the portion from which the transparent conductive layer 2 has been removed finally becomes the separation groove 11.
  • the power generation layer 3 is formed on the translucent substrate 1 and the transparent conductive layer 2 (step S4 in FIG. 3, FIG. 4D). Thereafter, the translucent substrate 1 is held so that the power generation layer 3 is on the lower side, and the processing solution discharge nozzle 7 ejects the processing solution 6 from below to supply the power generation layer 3 from the translucent substrate 1 side.
  • Laser patterning is performed by irradiating a laser to remove a part of the power generation layer 3 (step S5 in FIG. 3, FIG. 4E).
  • the treatment solution 6 has a property of inactivating (passivating) the defects of the material forming the power generation layer 3, and is composed of any one of iodine, quinhydrone, and cyan, an organic solvent, and water.
  • the wettability of the power generation layer 3 can be improved by adding a surfactant.
  • a surfactant low molecular anion type, low molecular nonion type or oligomer type can be used, and it is desirable to add about 0.005 to 0.3% by mass in the treatment solution 6.
  • the organic solvent contains one or more of alcohols such as methanol and ethanol, ethers, and benzenes. The portion from which the power generation layer 3 is removed finally becomes the connection groove 12.
  • the back reflective electrode layer 4 is formed on the transparent conductive layer 2 and the power generation layer 3 (step S6 in FIG. 3, FIG. 4 (f)). Thereafter, the translucent substrate 1 is held so that the back surface reflective electrode layer 4 is on the lower side, and the processing solution discharge nozzle 7 ejects the processing solution 6 from below and supplies the back surface reflective electrode layer 4 with the light transmitting property.
  • Laser patterning is performed by irradiating a laser from the substrate 1 side to remove a part of the power generation layer 3 and the back surface reflective electrode layer 4 (step S7 in FIG. 3, FIG. 4G). A portion where the power generation layer 3 and the back surface reflective electrode layer 4 are removed becomes a separation groove 13.
  • processing solution 6 is sprayed from below by the processing solution discharge nozzle 7 and supplied to the back surface reflective electrode layer 4 while irradiating the laser from the translucent substrate 1 side to perform laser patterning, and the periphery of the translucent substrate 1.
  • the transparent conductive layer 2, the power generation layer 3, and the back surface reflective electrode layer 4 are removed (step S8 in FIG. 3, FIG. 4H).
  • a defect is generated around the laser patterning portion and a residue is generated.
  • the passivation of the defect and the removal of the residue are performed. It can be performed at the same time, and the photoelectric conversion characteristics can be improved and the number of steps can be reduced.
  • the electric power generation layer 3 which is a semiconductor layer is not formed at the time of the process in step S3 and passivation is not required, the transparent conductive layer 2 is only laser processed.
  • the sealing material 9 and the back sheet 15 are laminated to form a module (step S9 in FIG. 3, FIG. 4 (i)).
  • Laser patterning is performed after the transparent conductive layer 2 is formed (step S3 in FIG. 3), the power generation layer 3 is formed (step S5 in FIG. 3), and the back surface reflective electrode layer 4 is formed (step S7 in FIG. 3). This is also performed for film removal of the portion (step S8 in FIG. 3). That is, laser patterning is performed a plurality of times.
  • a YAG (YttriumnetAluminum Garnet) laser is used for the laser patterning.
  • the fundamental wave is used for the processing in steps S3 and S8, and the steps S5 and S7 are used.
  • the second harmonic is applied.
  • FIG. 5 is a cross-sectional view of the multi-junction photoelectric conversion device during construction of laser patterning (step S7 in FIG. 3).
  • the transparent substrate 1 is held with the film surface facing down, and the processing solution 6 is sprayed and supplied from the processing solution discharge nozzle 7 to the film surface, and the laser irradiation port 5 on the opposite upper surface side is supplied.
  • 2 shows a state in which the film is laser processed through the translucent substrate 1.
  • a solution obtained by mixing a liquid having a passivation effect (iodine or the like), an organic solvent, and water is used as the treatment solution 6 and is ejected from the treatment solution discharge nozzle 7 to supply the treatment solution 6 to a laser patterning application site.
  • the treatment solution 6 includes iodine, quinhydrone (compound composed of one quinone molecule and one hydroquinone molecule) having a passivation effect against silicon defects, and A solution containing either cyan and water is used. Since these materials are known materials used for silicon passivation, they can be obtained relatively easily. The residue can be easily removed by appropriately adjusting the flow rate, discharge angle, nozzle diameter, and the like of the processing solution 6 discharged from the processing solution discharge nozzle 7. That is, the defect generated around the patterning portion is passivated by the chemical action of the processing solution 6, and the residue is removed by the physical action of the processing solution 6.
  • FIG. 6 shows a case where the translucent substrate 1 is held in the processing solution immersion tank 8 containing the processing solution 6 so that the film surface is in contact with the processing solution 6, and laser light is irradiated through the translucent substrate 1. It shows how it is processed.
  • the residue is removed by causing the treatment solution 6 in the treatment solution immersion tank 8 to flow or vibrate as appropriate using a vibrator (the treatment solution 6 is stored in a non-stationary state in the treatment solution immersion tank 8). Easy to remove.
  • FIG. 7 is a diagram showing a configuration of a crystalline solar cell manufactured by the method for manufacturing a photoelectric conversion device according to the embodiment of the present invention.
  • a crystalline silicon solar cell generally has a structure comprising a crystalline silicon substrate 40, a conductive layer 41a, a conductive layer 41b, an antireflection layer 42, a grid electrode 43, and a back surface reflective electrode 44.
  • the crystalline silicon substrate 40 As the crystalline silicon substrate 40, a P-type or N-type conductivity type is used. Since this substrate is usually cut out by slicing, the surface is contaminated with a natural oxide film, structural defects, metals and the like. For this reason, the crystalline silicon substrate 40 is cleaned.
  • a texture is formed by wet etching using an alkaline solution for the purpose of reducing light reflection loss on the substrate surface.
  • Sodium hydroxide or the like is used for the alkaline solution.
  • the uneven shape is not drawn but is flat.
  • the conductive layer 41a is formed by thermal diffusion to form a PN junction. If the crystalline silicon substrate 40 is P-type, an N-type layer is formed on the substrate surface using trichlorophosphoric acid or the like. If the crystalline silicon substrate 40 is N-type, the P-type layer is used using boron trichloride or the like. Is formed on the substrate surface.
  • the thermal diffusion treatment temperature is about 1000 ° C.
  • the edge of the conductive layer 41a that becomes a leak path between the front surface electrode (grid electrode 43) and the back surface electrode (back surface reflective electrode 44) is removed by laser isolation.
  • the width of the isolation groove is about 10 micrometers.
  • a liquid having a passivation effect iodine, etc.
  • a solution obtained by mixing an organic solvent and water is used as a processing solution, and sprayed from a processing solution discharge nozzle in the same manner as in a thin film solar cell.
  • Iodine, quinhydrone (a compound composed of one quinone molecule and one hydroquinone molecule) and cyan are known substances used for silicon passivation, and thus are relatively easily available.
  • the residue can be easily removed by appropriately adjusting the flow rate, discharge angle, nozzle diameter, etc. of the processing solution discharged from the processing solution discharge nozzle. That is, defects generated around the patterning portion are passivated by the chemical action of the processing solution, and residues are removed by the physical action of the processing solution.
  • silicon can be brought into contact with the treatment solution in the treatment solution immersion tank containing the treatment solution.
  • an antireflection layer 42 is formed on the surface side of the substrate.
  • silicon nitride, silicon oxide or the like is used for the antireflection layer 42.
  • the antireflection layer 42 is formed using a PECVD method, a thermal oxidation method, or the like.
  • the grid electrode 43 is formed on the antireflection layer 42, and the back surface reflection electrode 44 is formed on the opposite side surface.
  • a metal material such as aluminum or silver is used for the grid electrode 43 and the back surface reflection electrode 44.
  • the grid electrode 43 can be formed by screen printing or baking. However, since the so-called fire-through occurs through the antireflection layer 42 and contacts the lower conductive type layer 41a during baking, the resistance component of the antireflection layer 42 is a solar cell. Does not affect the properties.
  • the back surface reflection electrode 44 can be formed by vapor deposition or sputtering.
  • the crystalline silicon substrate 40 is P-type
  • aluminum is diffused to the back side of the crystalline silicon substrate 40 by baking after forming an aluminum back electrode that is generally used as a back electrode, and a P-type high concentration layer
  • the conductivity type layer 41b is formed, and the solar cell characteristics can be improved by applying the BSF effect (back surface field effect).
  • the conductive type layer 41b which is an N-type high concentration layer, is formed by CVD using a gas such as silane, hydrogen, or phosphine, and the back surface reflective electrode 44 is formed To do. It is also possible to form an N-type conductive layer 41b by diffusing elements such as phosphorus and arsenic into the crystalline silicon substrate 40.
  • Example 1 Examples of the thin film solar cell include a first photoelectric conversion layer made of amorphous silicon, a second photoelectric conversion layer made of amorphous silicon germanium, and a third photoelectric conversion made of microcrystalline silicon.
  • a power generation layer was constituted by three junctions of layers, an intermediate layer formed of amorphous silicon oxide, and a back side transparent conductive layer formed of aluminum-added zinc oxide. The intermediate layer was provided between the first photoelectric conversion layer and the second photoelectric conversion layer.
  • a multi-junction photoelectric conversion device was formed by laser patterning after the generation of the power generation layer, the formation of the back surface reflective electrode layer, and before the modulation by the method shown in FIG.
  • Examples of the thin film solar cell include a first photoelectric conversion layer made of amorphous silicon, a second photoelectric conversion layer made of amorphous silicon germanium, and a third photoelectric conversion made of microcrystalline silicon.
  • the structure has three layers, an intermediate layer formed of amorphous silicon oxide, and a back transparent conductive layer formed of aluminum-added zinc oxide.
  • the intermediate layer was provided between the first photoelectric conversion layer and the second photoelectric conversion layer.
  • a multi-junction photoelectric conversion device was formed by laser patterning after the generation of the power generation layer, the formation of the back surface reflection electrode layer, and before the modulation, by the method shown in FIG. The working conditions in the steps other than laser patterning were the same as those in Example 1.
  • Example 3 As an example of the crystalline solar cell, a structure having a crystalline silicon substrate 40, a conductive layer 41a, a conductive layer 41b, an antireflection layer 42, a grid electrode 43, and a back surface reflective electrode 44 as shown in FIG. Similarly to the method in the thin film solar cell, the crystalline silicon solar cell is subjected to edge isolation by laser on the conductive type layer 41a serving as a leak path between the front electrode and the back electrode in the method as shown in FIG. A battery was formed.
  • a first photoelectric conversion layer made of amorphous silicon As a comparative example regarding a thin film solar cell, a first photoelectric conversion layer made of amorphous silicon, a second photoelectric conversion layer made of amorphous silicon germanium, and a third photoelectric conversion made of microcrystalline silicon
  • a power generation layer was constituted by three junctions of layers, an intermediate layer formed of amorphous silicon oxide, and a back side transparent conductive layer formed of aluminum-added zinc oxide.
  • the intermediate layer was provided between the first photoelectric conversion layer and the second photoelectric conversion layer.
  • Comparative Example 2 As a comparative example relating to a crystalline solar cell, a structure having a crystalline silicon substrate, two types of conductive layers, an antireflection layer, a grid electrode, and a back surface reflective electrode, as in the configuration shown in FIG. A crystalline silicon solar cell was formed by performing edge isolation with a laser on the conductive layer serving as a leak path between the front electrode and the back electrode without using the treatment solution of the present invention.
  • FIG. 8 shows characteristics of the multi-junction photoelectric conversion devices formed in Example 1, Example 2, Example 3, Comparative Example 1, and Comparative Example 2.
  • the numerical value in the figure is a value normalized based on the value in the comparative example (as 1.00).
  • the fill factor (FF), the parallel resistance R sh (Shunt resistance), and the conversion efficiency E ff are larger than those in the comparative example. It was confirmed that the characteristics were improved by using the passivation treatment.
  • the manufacturing method of the photoelectric conversion device can reduce the number of processes by unifying the laser patterning process, the residue removal process, and the passivation process. By reducing the number of processes, it is possible to reduce energy consumption in the production process and reduce the environmental load at the manufacturing stage.
  • a multi-junction photoelectric conversion device and a crystalline solar cell have been described as examples, but also in a manufacturing process of a single junction photoelectric conversion device including only one photoelectric conversion layer as a unit power generation layer.
  • the present invention is applicable.
  • the treatment solution is supplied in all the steps S5, S7, and S8 for laser patterning of the power generation layer in FIG. 3, but it is most effective, but the passivation treatment is performed even if the treatment solution is supplied only in any one of the steps. And the effect of removing the residue is obtained.
  • the present invention is used not only for the edge isolation described above but also for the formation of a through electrode for back contact and a groove for a buried electrode for reducing shadow loss. Can do.
  • the method for manufacturing a photoelectric conversion device according to the present invention is useful in that the number of processes can be reduced by unifying the patterning process, the residue removal process, and the passivation process, and in particular, a thin film solar cell module, a crystal system Suitable for manufacturing solar cell modules.

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Abstract

L'invention concerne un procédé servant à produire un dispositif de conversion photoélectrique qui permet de produire un dispositif de conversion photoélectrique ayant une excellente performance de conversion photoélectrique sans augmenter le nombre d'étapes pendant sa production. Dans l'étape de traitement du silicium utilisant un laser, par exemple un laser au grenat d'yttrium et d'aluminium (YAG) pendant un processus de production de cellule solaire au silicium, une solution de traitement (6) ayant la propriété d'inactiver les défauts d'une couche génératrice de puissance (3) servant à réaliser une conversion photoélectrique est injectée, en utilisant un embout de décharge de solution de traitement (7), dans une section à traiter au moyen d'un laser sur la couche génératrice de puissance (3), éliminant ainsi le résidu généré pendant l'étape de traitement utilisant un laser.
PCT/JP2011/057055 2010-08-05 2011-03-23 Procédé de production d'un dispositif de conversion photoélectrique Ceased WO2012017703A1 (fr)

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JP2010176213A JP2013219064A (ja) 2010-08-05 2010-08-05 光電変換装置の製造方法
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WO2018043644A1 (fr) * 2016-08-31 2018-03-08 京セラ株式会社 Cellule solaire et procédé de fabrication de cellule solaire

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