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WO2012093556A1 - Capteur de courant d'équilibre magnétique et procédé de fabrication d'un capteur de courant d'équilibre magnétique - Google Patents

Capteur de courant d'équilibre magnétique et procédé de fabrication d'un capteur de courant d'équilibre magnétique Download PDF

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Publication number
WO2012093556A1
WO2012093556A1 PCT/JP2011/078584 JP2011078584W WO2012093556A1 WO 2012093556 A1 WO2012093556 A1 WO 2012093556A1 JP 2011078584 W JP2011078584 W JP 2011078584W WO 2012093556 A1 WO2012093556 A1 WO 2012093556A1
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WIPO (PCT)
Prior art keywords
magnetic field
current
resist frame
feedback coil
magnetic
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Ceased
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PCT/JP2011/078584
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English (en)
Japanese (ja)
Inventor
英範 畑谷
直樹 坂詰
光博 後藤
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Alps Green Devices Co Ltd
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Alps Green Devices Co Ltd
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Publication date
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Publication of WO2012093556A1 publication Critical patent/WO2012093556A1/fr
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates

Definitions

  • the present invention relates to a magnetic balance type current sensor using a magnetoresistive effect element (TMR element, GMR element) and a method for manufacturing the magnetic balance type current sensor.
  • TMR element magnetoresistive effect element
  • GMR element magnetoresistive effect element
  • a motor In an electric vehicle, a motor is driven using electricity, and the magnitude of the current for driving the motor is detected by, for example, a magnetic balance type current sensor.
  • a magnetic balance type current sensor In a magnetic balance type current sensor, when a current to be measured flows through a current line, an output voltage is generated in the magnetic detection element by an induced magnetic field due to the current to be measured, and this is converted into a current and passed through a feedback coil.
  • the magnetic balance type current sensor acts so as to cancel the induced magnetic field due to the current to be measured by the cancel magnetic field generated in the feedback coil, and takes out the feedback current flowing through the feedback coil at this time as an output.
  • a method in which a coil such as a feedback coil of a magnetic balance type current sensor is formed on a base layer in a planar manner (see, for example, Patent Document 1).
  • the coil described in Patent Document 1 is formed by forming a resist frame (patterned resist layer) on a base layer by photolithography and then plating a non-formation region of the resist frame.
  • the side surface of the resist frame is formed perpendicular to the underlayer along the mask pattern.
  • the present invention has been made in view of the above points, and improves the adhesiveness between the resist frame and the underlayer, and can widen the measurement range of the current to be measured and the magnetic balanced current sensor. It aims at providing the manufacturing method of.
  • the magnetic balance type current sensor of the present invention generates a magnetic detection element whose output changes due to an induced magnetic field of a current to be measured flowing through a current line, and a cancel magnetic field that cancels the induced magnetic field by the output of the magnetic detection element.
  • the side surface includes an insulating resist frame formed in a concave shape in the thickness direction, and the element wire of the feedback coil extends along the side surface of the resist frame so as to fill between adjacent resist frames.
  • the method of manufacturing a magnetically balanced current sensor according to the present invention generates a cancel magnetic field that cancels the induced magnetic field in a feedback coil, based on the output of the magnetic detection element according to the induced magnetic field of the current to be measured flowing through the current line.
  • a method of manufacturing a magnetically balanced current sensor in which a current corresponding to the current to be measured flows in the feedback coil in a balanced state in which a canceling magnetic field and the induction magnetic field cancel each other, and the direction of arrangement of the strands of the feedback coil Forming the insulating resist frame such that the side surface of the resist frame is concave in the thickness direction, and forming the feedback coil along the side surface of the resist frame so as to fill in between adjacent resist frames And a process.
  • the side surface of the resist frame is formed in a concave shape, and the end portion on the base layer side is widened. Therefore, the installation area of the resist frame with respect to the base layer can be secured and the adhesion can be improved. Therefore, the resist frame is not peeled off from the underlayer during the manufacturing process, and the coil is not short-circuited between the coils via the peeled portion. Moreover, since the side surface of the strand of the feedback coil is formed to swell along the side surface of the resist frame, the cross-sectional area of the strand can be increased and the coil resistance can be decreased. Thereby, the feedback current can be increased, and the measurement range of the current to be measured can be expanded.
  • the side surface of the resist frame is curved in a concave shape. According to this configuration, the feedback coil can be easily formed along the side surface of the resist frame by plating or the like.
  • the side surface of the resist frame has a numerical aperture of 0.6 or more, a focal length of 0.5 ⁇ m or more, and an exposure amount of 3000 J / m 2. It is preferably formed by photolithography under the above conditions. According to this configuration, the side surface of the resist frame can be formed in a concave shape by photolithography.
  • a magnetic detection element whose output changes due to the induced magnetic field of the current to be measured flowing through the current line, and a cancel magnetic field that cancels the induced magnetic field by the output of the magnetic detection element are generated.
  • An insulating resist frame formed in a concave shape in the thickness direction, and a wire of the feedback coil is formed along the side surface of the resist frame so as to fill in between adjacent resist frames. Yes. For this reason, the adhesiveness between the resist frame and the underlayer can be improved, and the measurement range of the current to be measured can be expanded.
  • FIGS. 1 and 2 are diagrams showing a magnetic balance type current sensor according to an embodiment of the present invention.
  • the magnetic balanced current sensor shown in FIGS. 1 and 2 is disposed in the vicinity of the current line 11 through which the current to be measured I flows.
  • the magnetic balance type current sensor includes a feedback circuit 12 that generates a magnetic field (cancellation magnetic field) that cancels the induced magnetic field caused by the current I to be measured flowing through the current line 11.
  • the feedback circuit 12 includes a feedback coil 121 wound in a direction to cancel the magnetic field generated by the current I to be measured, two magnetoresistive elements 122a and 122b that are magnetic detection elements, and two fixed resistance elements 123a, 123b.
  • the feedback coil 121 is a flat coil (for example, a flat spiral coil). In this configuration, since there is no magnetic core, the feedback coil can be manufactured at low cost. Further, as compared with the case of the solenoid coil, it is possible to prevent the canceling magnetic field generated from the feedback coil from spreading over a wide range and to avoid affecting the peripheral circuits. Furthermore, when the current I to be measured is an alternating current as compared with the solenoid coil, the control of the canceling magnetic field by the feedback coil is easy, and the current flowing for the control is not so large. About these effects, it becomes so large that the to-be-measured current I becomes a high frequency by alternating current. When the feedback coil 121 is configured by a planar coil, the planar coil is preferably provided so that both an induction magnetic field and a cancellation magnetic field are generated in a plane parallel to the plane of the planar coil.
  • the resistance value of the magnetoresistive effect element 122 changes when an induction magnetic field is applied from the current I to be measured.
  • the two magnetoresistance effect elements 122a and 122b constitute a magnetic field detection bridge circuit together with the two fixed resistance elements 123a and 123b.
  • This magnetic field detection bridge circuit has two outputs that generate a voltage difference corresponding to the induced magnetic field generated by the current I to be measured.
  • a power source Vdd is connected to a connection point between the magnetoresistive effect element 122b and the fixed resistance element 123a, and the magnetoresistive effect element 122a and the fixed resistance element 123b are connected.
  • a ground (GND) is connected to the connection point.
  • one output is taken out from the connection point between the magnetoresistive effect element 122a and the fixed resistance element 123a, and from the connection point between the magnetoresistive effect element 122b and the fixed resistance element 123b. Another output is taken out.
  • This two outputs are amplified by the amplifier 124 and supplied to the feedback coil 121 as a current (feedback current).
  • This feedback current corresponds to a voltage difference according to the induced magnetic field.
  • a cancellation magnetic field that cancels the induction magnetic field is generated in the feedback coil 121.
  • the current I to be measured is measured by the detection unit (detection resistor R) based on the current flowing through the feedback coil 121 when the induced magnetic field and the canceling magnetic field cancel each other.
  • FIG. 3 is an explanatory diagram of a cross-sectional shape of the feedback coil.
  • FIG. 3A is a schematic cross-sectional view of the feedback coil according to the present embodiment.
  • FIG. 3B is a schematic cross-sectional view of a feedback coil according to a comparative example.
  • a protective film covering the feedback coil is omitted for convenience of explanation.
  • the feedback coil 121 is formed by providing strands 128 between resist frames 127 arranged at a predetermined interval on the base layer 126.
  • the resist frame 127 is made of an insulating material and insulates between adjacent strands 128.
  • the side surface 127a in the direction in which the strands 128 are arranged is formed to be concavely curved in the thickness direction.
  • the side surface 127a of the resist frame 127 is recessed in an arc shape when viewed in cross section, and the cross-sectional shape of the resist frame 127 is formed such that the upper and lower ends in the thickness direction are wide and the substantially middle position in the thickness direction is narrow.
  • the side surface 127a of the resist frame 127 is formed by adjusting exposure conditions such as numerical aperture (NA), focal length (Focus), and exposure dose (Dose) in photolithography.
  • NA numerical aperture
  • Focus focal length
  • Dose exposure dose
  • the side surface 127a of the resist frame 127 is not defined along the mask pattern of the photomask, but is changed to a concave shape in the thickness direction.
  • the side surface 127a of the resist frame 127 protrudes slightly to the side of the mask pattern defining line L1 indicated by the broken line at the upper and lower ends in the thickness direction, and slightly inward of the mask pattern defining line L1 at a substantially intermediate position in the thickness direction. Indented.
  • the resist frame 127 has a larger installation area with respect to the base layer 126 than the case where the resist frame 127 is defined along the resist pattern. Therefore, the resist frame 127 has improved adhesion to the base layer 126, the resist frame 127 is not peeled off from the base layer 126 during the manufacturing process, and the wires 128 are short-circuited through the peeled portions. There is nothing.
  • the substantially middle position in the thickness direction of the resist frame 127 is formed narrow, it has a width enough to obtain sufficient insulation between the strands 128. Details of the exposure conditions will be described later.
  • the strand 128 of the feedback coil 121 is formed along the side surface 127a of the resist frame 127. That is, the side surface 127a of the strand 128 is swelled in an arc shape when viewed in cross section, and the cross-sectional shape of the strand 128 is formed such that the upper and lower ends in the thickness direction are narrow and the substantially middle position in the thickness direction is wide. In this case, the side surface 127a of the strand 128 bulges slightly to the side of the mask pattern defining line L1 at a substantially intermediate position in the thickness direction. For this reason, the cross-sectional area of the strand 128 is increased by the amount of depression of the side surface 127a of the resist frame 127, the coil resistance is reduced, and the amount of current flowing through the feedback coil 121 can be increased.
  • the feedback coil 135 according to the comparative example has the side surface 132a of the resist frame 132 formed substantially perpendicular to the base layer 134 without using the above exposure conditions.
  • the side surface 132a of the resist frame 132 is defined along the resist pattern of the photomask. That is, the side surface 132a of the resist frame 132 is formed along a mask pattern demarcation line L2 indicated by a broken line in the thickness direction. For this reason, when the resist frame 132 is formed to be narrow, sufficient adhesion to the base layer 134 cannot be obtained, and the resist frame 132 may be peeled off from the base layer 134 during the manufacturing process.
  • the strand 133 of the feedback coil 135 is formed along the side surface 132a of the resist frame 132 corresponding to the demarcation line L2 of the mask pattern of the photomask.
  • the cross-sectional shape of the wire 133 is determined by the mask pattern, it is difficult to change the cross-sectional shape (cross-sectional area) of the wire 133 so as to reduce the coil resistance. For this reason, in the feedback coil 135 according to the comparative example, the amount of feedback current cannot be increased.
  • FIG. 4 is a cross-sectional view of the magnetic balanced current sensor shown in FIG.
  • the feedback coil 121 and the magnetic field detection bridge circuit are formed on the same substrate.
  • a thermal silicon oxide film 22 as an insulating layer is formed on a substrate 21.
  • An aluminum oxide film 23 is formed on the thermal silicon oxide film 22.
  • the aluminum oxide film 23 can be formed by a method such as sputtering.
  • magnetoresistive effect elements 122a and 122b are formed on the aluminum oxide film 23, magnetoresistive effect elements 122a and 122b are formed. At this time, fixed resistance elements 123a and 123b are also provided together with the magnetoresistance effect elements 122a and 122b, and a magnetic field detection bridge circuit is built.
  • the magnetoresistive effect elements 122a and 122b TMR elements (tunnel type magnetoresistive effect elements), GMR elements (giant magnetoresistive effect elements), and the like can be used.
  • GMR element a spin valve type GMR element or a spin valve type TMR element constituted by a multilayer film having an antiferromagnetic layer, a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer can be used.
  • the spin valve GMR element is preferably a GMR element having a meander shape as shown in the enlarged view of FIG.
  • the width D in the pin (PIn) direction is preferably 1 ⁇ m to 10 ⁇ m.
  • the longitudinal direction is both perpendicular to the direction of the induction magnetic field A and the direction of the cancellation magnetic field B.
  • the spin valve type TMR element is preferably a rectangle with a width in the pin direction of 1 ⁇ m to 10 ⁇ m in consideration of linearity.
  • the longitudinal direction is both perpendicular to the direction of the induction magnetic field A and the direction of the cancellation magnetic field B.
  • a polyimide layer 24 is formed as an insulating layer on the aluminum oxide film 23 on which the magnetoresistive effect elements 122a and 122b and the fixed resistance elements 123a and 123b are formed.
  • the polyimide layer 24 can be formed by applying and curing a polyimide material.
  • a silicon oxide film 25 is formed on the polyimide layer 24.
  • the silicon oxide film 25 can be formed by a method such as sputtering.
  • a feedback coil 121 is formed on the silicon oxide film 25.
  • the feedback coil 121 is formed by photolithography and plating after forming a base material. Specifically, a resist is applied on the base, and a mask pattern of a photomask is transferred to the resist to form a resist frame 127. As described above, the side surface 127a of the resist frame 127 is formed to be recessed in a circular arc shape in cross section. And the strand 128 of the feedback coil 121 is formed along the side surface 127a so that the space between the adjacent resist frames 127 may be filled by plating.
  • a polyimide layer 26 is formed on the feedback coil 121 and the resist frame 127 as an insulating layer.
  • the polyimide layer 26 can be formed by applying and curing a polyimide material.
  • the polyimide layer 26 may be formed of the same material as the resist frame 127, or the resist frame 127 may be formed of a polyimide material.
  • a silicon oxide film 27 is formed on the polyimide layer 26 as a protective film.
  • the silicon oxide film 27 can be formed by a method such as sputtering.
  • the induced magnetic field A generated from the current I to be measured is received by the magnetoresistive effect elements 122a and 122b, and the induced magnetic field A is fed back.
  • the canceling magnetic field B is generated from the feedback coil 121, and the two magnetic fields (the induction magnetic field A and the canceling magnetic field B) are canceled and adjusted appropriately so that the magnetic field applied to the magnetoresistive effect element 122 becomes zero.
  • the magnetic balanced current sensor having the above configuration uses a magnetic field detection bridge circuit having a magnetoresistive effect element, particularly a GMR element or a TMR element, as a magnetic detection element. Thereby, a highly sensitive magnetic balance type current sensor can be realized.
  • the magnetic balanced current sensor having the above-described configuration can be reduced in size because the feedback coil 121 and the magnetic field detection bridge circuit are formed on the same substrate. Furthermore, since this magnetic balance type current sensor has no magnetic core, it can be reduced in size and cost.
  • FIG. 5 is a diagram showing an example of the relationship between the current to be measured and the induced magnetic field.
  • FIG. 6 is a diagram illustrating an example of the relationship between the feedback current and the canceling magnetic field.
  • FIG. 5 shows the measurement results when the magnetoresistive element is separated by 50 mm from the current line.
  • FIG. 6 shows the measurement results when the magnetoresistive element is separated from the feedback coil by 5 ⁇ m.
  • the magnetoresistive effect element when the current to be measured is 1000 A, the magnetoresistive effect element generates an induced magnetic field of 3 mT to 5 mT at a position 50 mm away from the current line 11.
  • the magnetoresistive element requires a feedback current of 25 mA to 45 mA in order to generate a cancellation magnetic field of 3 mT to 5 mT at a position 5 ⁇ m away from the feedback coil 121.
  • the induced magnetic field becomes stronger as the current to be measured increases, in order to cancel the induced magnetic field, it is necessary to increase the feedback current and strengthen the canceling magnetic field.
  • the coil resistance of the strand 128 is reduced by the increase in the cross-sectional area.
  • the feedback current can be increased, the canceling magnetic field can be increased, and the measurement range of the current to be measured can be expanded.
  • the coil resistance is reduced by 10%
  • the feedback current can be increased by 10%.
  • the cancellation magnetic field is increased by 10%, and a 10% increase in the measurement range of the current to be measured can be expected.
  • the voltage at the time of flowing a feedback current can be reduced, and the power consumption by this can be suppressed. About 10% reduction in power consumption can be expected by reducing coil resistance by 10%.
  • the feedback coil 121 can be made thinner by increasing the cross-sectional area of the wire 128.
  • the thickness of the substrate on which the feedback coil 121 and the magnetic field detection bridge circuit shown in FIG. 4 are formed can be reduced. Thereby, when adjusting the characteristics of the magnetoresistive effect elements 122a and 122b according to the distance from the shield (not shown), the distance can be set in a wider range by the thinned portion. The degree of freedom is improved.
  • FIG. 7 is a cross-sectional view of the resist frame.
  • FIG. 7A shows a resist frame formed under the exposure conditions according to the present embodiment.
  • FIG. 7B shows a resist frame formed under the exposure conditions according to the comparative example.
  • SIPR-9740-6.0 manufactured by Shin-Etsu Chemical Co., Ltd.
  • i5 manufactured by Canon Inc.
  • SSFD238 manufactured by Shin-Etsu Chemical Co., Ltd.
  • the numerical aperture (NA) is 0.63
  • the focal length (Focus) is 0.7 ⁇ m
  • the exposure amount (Dose) is 5000 J / m 2 as the exposure conditions.
  • the resist frame had an arcuate side surface in cross section in the thickness direction
  • the installation width with respect to the underlayer at the lower end was about 3.21 ⁇ m
  • the width at the substantially middle position was about 2.270 ⁇ m.
  • the numerical aperture (NA) is 0.45
  • the focal length (Focus) is ⁇ 2.5 ⁇ m
  • the exposure dose (Dose) is 5000 J / m.
  • Exposure was set to 2 .
  • the side surface of the resist frame substantially perpendicular to the underlayer was formed, the installation width of the lower end with respect to the underlayer was about 2.94 ⁇ m, and the width at the substantially middle position was about 2.80 ⁇ m.
  • the installation area with respect to the base surface is increased by about 10% as compared with the resist frame of the comparative example.
  • the adhesiveness with respect to the base layer of a resist frame improved.
  • the width at the substantially intermediate position in the thickness direction is narrower than that of the resist frame according to the comparative example, and the cross-sectional area of the strands of the feedback coil is increased. Thereby, coil resistance was made small and the measurement range of the current I to be measured was expanded.
  • the exposure conditions according to the present embodiment are not limited to the above conditions.
  • the exposure conditions allow the side surface of the resist frame to be formed in a concave shape, the numerical aperture (NA) is 0.6 or more, and the focal length (Focus) is 0.5 ⁇ m.
  • the exposure dose (Dose) may be 3000 J / m 2 or more.
  • the side surface 127a of the resist frame 127 is formed in an arc shape in cross section in the direction in which the strands 128 of the feedback coil 121 are arranged.
  • the side surface of the resist frame 127 may be formed in any way as long as the resist frame 127 is formed in a concave shape so that the adhesion surface of the resist frame 127 to the underlayer becomes wider.
  • the feedback coil 121 can be thinned, but the coil resistance can be further reduced by increasing the cross-sectional area without thinning the feedback coil.
  • the side surface of the resist frame is formed in a concave shape and the end on the base layer side becomes wide, so that the installation area of the resist frame with respect to the base layer is ensured. Adhesion can be improved. Therefore, the resist frame is not peeled off from the underlayer during the manufacturing process, and the coil is not short-circuited between the coils via the peeled portion. Further, since the side surface of the strand of the feedback coil is formed so as to swell along the side surface of the resist frame, the coil resistance can be decreased by increasing the cross-sectional area of the strand. Thereby, the feedback current can be increased, and the measurement range of the current to be measured can be expanded.
  • the present invention is not limited to the above embodiment, and can be implemented with various modifications.
  • the materials, connection relations, thicknesses, sizes, manufacturing methods, and the like in the above embodiments can be changed as appropriate.
  • a magnetoresistive effect element is used for the magnetic balance type current sensor.
  • a Hall element or other magnetic detection element is used for the magnetic balance type current sensor. Also good.
  • the present invention can be implemented with appropriate modifications without departing from the scope of the present invention.
  • the present invention can be applied to a current sensor that detects the magnitude of a current for driving a motor of an electric vehicle.

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  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

Le but de la présente invention est d'améliorer l'adhérence entre un cadre de résine et une couche sous-jacente, et d'augmenter la plage de mesure pour des courants mesurés. Le capteur de courant d'équilibre magnétique de la présente invention comprend un élément de détection magnétique (112) dont la sortie change en fonction du champ magnétique induit du courant mesuré passant dans une ligne de courant (11), une bobine de retour (121) afin de générer un champ magnétique d'annulation qui annule le champ magnétique induit en fonction de la sortie de l'élément de détection magnétique (122) et afin de permettre à un courant en fonction du courant mesuré de circuler à un état équilibré dans lequel le champ magnétique d'annulation et le champ magnétique induit sont annulés, et un cadre de résine isolant (127) disposé entre des éléments fils (128) de la bobine de retour (121) et possédant des surfaces latérales (127a) dans le sens de la disposition des éléments fils (128) de la bobine de retour (121) dans lesquelles un renfoncement a été formé dans le sens de l'épaisseur. Les éléments fils (128) de la bobine de retour (121) sont formés de manière à s'étendre le long des surfaces latérales du cadre de résine (127).
PCT/JP2011/078584 2011-01-05 2011-12-09 Capteur de courant d'équilibre magnétique et procédé de fabrication d'un capteur de courant d'équilibre magnétique Ceased WO2012093556A1 (fr)

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JP2011-000544 2011-01-05
JP2011000544 2011-01-05

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114355019A (zh) * 2021-12-30 2022-04-15 江苏兴宙微电子有限公司 一种无磁芯闭环电流检测模块结构及封装方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288463A (ja) * 1995-04-18 1996-11-01 Hitachi Ltd ストリップ線路、インダクタ素子、およびモノリシックマイクロ波集積回路、ならびにこれらの製造方法
WO2010143718A1 (fr) * 2009-06-12 2010-12-16 アルプス・グリーンデバイス株式会社 Capteur de courant à équilibre magnétique

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288463A (ja) * 1995-04-18 1996-11-01 Hitachi Ltd ストリップ線路、インダクタ素子、およびモノリシックマイクロ波集積回路、ならびにこれらの製造方法
WO2010143718A1 (fr) * 2009-06-12 2010-12-16 アルプス・グリーンデバイス株式会社 Capteur de courant à équilibre magnétique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114355019A (zh) * 2021-12-30 2022-04-15 江苏兴宙微电子有限公司 一种无磁芯闭环电流检测模块结构及封装方法

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