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WO2012053296A1 - Capteur de courant - Google Patents

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Publication number
WO2012053296A1
WO2012053296A1 PCT/JP2011/070886 JP2011070886W WO2012053296A1 WO 2012053296 A1 WO2012053296 A1 WO 2012053296A1 JP 2011070886 W JP2011070886 W JP 2011070886W WO 2012053296 A1 WO2012053296 A1 WO 2012053296A1
Authority
WO
WIPO (PCT)
Prior art keywords
current
current sensor
sensor
magnetic
resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/070886
Other languages
English (en)
Japanese (ja)
Inventor
斎藤　正路
高橋　彰
俊彦 西田
雅博 飯塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Green Devices Co Ltd
Original Assignee
Alps Green Devices Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Green Devices Co Ltd filed Critical Alps Green Devices Co Ltd
Priority to JP2012539640A priority Critical patent/JPWO2012053296A1/ja
Publication of WO2012053296A1 publication Critical patent/WO2012053296A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/18—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
    • G01R15/183—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers using transformers with a magnetic core
    • G01R15/185—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers using transformers with a magnetic core with compensation or feedback windings or interacting coils, e.g. 0-flux sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/08—Circuits for altering the measuring range
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates

Definitions

  • the present invention relates to a current sensor that measures current without contact.
  • the present invention relates to a current sensor having a wide measurement range and high resolution.
  • Patent Document 1 discloses a current sensor using a magnetoresistive element as an element for the magnetic sensor.
  • the current sensor for measuring the high current described above has a wide measurement range, the resolution (also referred to as sensitivity) is low.
  • the resolution also referred to as sensitivity
  • current sensors for high current measurement are not suitable for applications that measure minute current such as dark current. Therefore, if such a current sensor for measuring a large current is used to measure the dark current, it is difficult to properly manage the remaining battery capacity, and it is necessary to operate the battery with a sufficient remaining capacity. Absent.
  • the present invention has been made in view of the foregoing, and it is an object of the present invention to provide a current sensor having a wide measurement range and high resolution.
  • the current sensor of the present invention comprises a first magnetic sensor, and comprises a first current sensor having a first measurable range and a second magnetic sensor, wherein the upper limit value is higher than the first measurable range. And the output of the first current sensor or the output of the second current sensor, depending on the magnitude of the measured current flowing through the current line. And sensor selection means for selecting In the above, the “measurable range” is a range defined by the lower limit value and the upper limit value of the current, and is a range in which the current value can be measured with appropriate accuracy.
  • the first current sensor may have a first resolution
  • the second current sensor may have a second resolution lower than the first resolution.
  • “resolution” is an index that represents sensitivity, and refers to an index that is represented by the smallest measurable current value.
  • the upper limit value of the second measurable range may be ten times or more of the upper limit value of the first measurable range.
  • the first resolution may be ten times or more of the second resolution. Note that resolution of "a-fold or more" (a is an arbitrary number) is synonymous with sensitivity of "a-fold or more", and the minimum measurable current value is "1 / a or less”. It says that there is.
  • the second magnetic sensor may include an element shield that covers the magnetic sensor element.
  • the upper limit value of the measurable range of the second current sensor provided with the second magnetic sensor can be sufficiently increased. it can.
  • the first current sensor and the second current sensor may be provided in the same chip.
  • the first current sensor and the second current sensor in the same chip, compared to the case where the first current sensor and the second current sensor are separate chips, It is possible to improve the alignment accuracy of the position and angle. This improves the current measurement accuracy.
  • the number of chips can be increased and the package cost can be reduced, as compared to the case where the first current sensor and the second current sensor are separate chips. Thereby, the cost of the current sensor can be reduced.
  • each of the first magnetic sensor and the second magnetic sensor may be a magnetic balance type sensor using a feedback coil.
  • a highly sensitive current sensor can be easily realized. Further, the characteristics of the magnetic sensor can be easily changed by adjusting the number of turns of the feedback coil.
  • the first current sensor includes a pair of the first magnetic sensors, is connected to the pair of first magnetic sensors, and calculates an output signal of the first magnetic sensor differentially; May be provided.
  • the second current sensor may include a pair of the second magnetic sensors, may be connected to the pair of the second magnetic sensors, and may include an arithmetic device that differentially calculates output signals thereof. .
  • the current sensor of the present invention can measure a minute current with high accuracy while measuring a large current by selecting and using the outputs of two current sensors having different measurable ranges and different resolutions.
  • the gist of the present invention is measured by including at least two or more current sensors having different measurable ranges and resolutions, and a sensor selection unit which selects these outputs according to the magnitude of the measured current.
  • the measurement range is changed according to the magnitude of the current to realize appropriate current measurement.
  • FIG. 1 is a block diagram showing an example of a circuit configuration of a current sensor 1 according to the present embodiment.
  • FIG. 1 is a view for explaining the features of the present invention in an easy-to-understand manner, and does not strictly represent the configuration of the current sensor 1. That is, in FIG. 1, a part of the configuration of the current sensor 1 may be omitted. In addition, another configuration may be added to the configuration shown in FIG.
  • the current sensor 1 is a sensor selection circuit to which the outputs of the first current sensor 11A and the second current sensor 11B, and the first current sensor 11A and the second current sensor 11B are input. And 12).
  • the first current sensor 11A and the second current sensor 11B have different measurable ranges and resolutions, and each output a voltage corresponding to the current to be measured.
  • the sensor selection circuit 12 determines which of the output of the first current sensor 11A and the output of the second current sensor 11B is to be adopted according to the output voltage of the first current sensor 11A or the second current sensor 11B.
  • the output of the adopted sensor is output as the output of the current sensor 1. That is, the sensor selection circuit 12 selects the output of the first current sensor 11A and the output of the second current sensor 11B according to the current to be measured.
  • the first current sensor 11A and the second current sensor 11B have different measurable ranges and resolutions, but one has high resolution and the other has wide measurable range (or the upper limit of the measurable range is high) It is desirable to be configured to be
  • the first current sensor 11A has a narrow measurable range (hereinafter referred to as the first measurable range) so as to be able to measure a minute current, but sufficient resolution (hereinafter referred to as the first resolution) It is configured to be high.
  • the resolution hereinafter referred to as the second resolution
  • the second resolution is low so that the second current sensor 11B can measure a large current, but the measurable range (hereinafter referred to as the second measurable range) is sufficiently It is configured to be broad.
  • the first resolution is 10 times or more of the second resolution
  • the upper limit value of the second measurable range is 10 times or more of the upper limit value of the first measurable range.
  • the first resolution is about 0.001 to 0.1 A, typically about 0.01 A
  • the second resolution is about 0.1 A to 1 A, typically about 0.1 A.
  • the upper limit of the first measurable range is about 1 A to 100 A, typically about 10 A
  • the upper limit of the second measurable range is about 10 A to 1000 A, typically about 100 A.
  • a magnetic balance type magnetic sensor is used for the first current sensor 11A and the second current sensor 11B.
  • a magnetic balance type magnetic sensor is arranged so as to be able to generate a magnetic field in the direction to cancel the magnetic field generated by the current to be measured, and a bridge circuit consisting of two magnetoresistive elements and two fixed resistance elements as magnetic sensor elements. It comprises a feedback coil.
  • the feedback coil is disposed in the vicinity of the magnetoresistive element of the bridge circuit, and generates a cancellation magnetic field that cancels out the induced magnetic field generated by the current to be measured.
  • a GMR (Giant Magneto Resistance) element, a TMR (Tunnel Magneto Resistance) element, or the like can be used as the magnetoresistive effect element of the bridge circuit.
  • the magnetoresistance effect element has a characteristic that the resistance value is changed by the induced magnetic field from the current to be measured.
  • a high sensitivity current sensor can be realized by configuring a bridge circuit using a magnetoresistance effect element having such characteristics. Further, by using the magnetoresistive effect element, the sensitivity axis can be easily arranged in the direction parallel to the substrate surface on which the current sensor is installed, and it becomes possible to use a planar coil.
  • the magnetic sensors that can be used for the first current sensor 11A and the second current sensor 11B are not limited to the magnetic balance type. It is also possible to use a magnetic proportional sensor or the like which does not have a feedback coil.
  • the first current sensor 11A or the second current sensor 11B may have a pair of magnetic sensors and a computing device, and may be a current sensor of a type that differentially calculates output signals of the pair of magnetic sensors. By adopting such a configuration, it is possible to cancel the influence of the external magnetic field by differential operation, so it is possible to sufficiently improve the measurement accuracy of the current. In particular, in the first current sensor 11A for fine current measurement which is greatly affected by the external magnetic field, the effect is large.
  • the first current sensor 11A and the second current sensor 11B may be provided in the same chip.
  • the mounting positions of the first current sensor 11A and the second current sensor 11B, and the mounting angles of the first current sensor 11A and the second current sensor 11B can be accurately adjusted. This can enhance the accuracy of current measurement.
  • the number of chips can be increased and the package cost can be reduced. Thereby, cost reduction of the current sensor 1 can be achieved.
  • the current sensor included in the current sensor 1 Is not limited to two.
  • the current sensor first current sensor 11A
  • the current sensor second current sensor 11B
  • a current sensor third current sensor, not shown
  • the current sensor 1 may include four or more current sensors having different measurable ranges and resolutions.
  • FIG. 2 shows the layer configuration (left in FIG. 2) of the magnetic sensor (hereinafter referred to as the first magnetic sensor 201A) used for the first current sensor 11A, and the magnetic sensor (hereinafter referred to as the second sensor) used for the second current sensor 11B. It is a cross-sectional schematic diagram which shows the layer structure (FIG.
  • FIG. 2 mainly shows the layer configuration of the bridge circuit and the feedback coil in the first magnetic sensor 201A and the second magnetic sensor 201B. Further, FIG. 2 also shows a current line 13 through which the current to be measured flows in the back direction of the drawing.
  • the insulating layer 212 is formed on the substrate 211.
  • a silicon substrate or the like is used, and as the insulating layer 212, a silicon oxide film, an aluminum oxide film, or the like is used.
  • the silicon oxide film can be formed by a method such as thermal oxidation of a silicon substrate, sputtering, plasma CVD or the like.
  • the aluminum oxide film can be formed using a method such as sputtering or plasma CVD.
  • magnetoresistive effect elements 213A and 213B which are magnetic sensor elements are formed.
  • the magnetoresistive effect elements 213A and 213B may form a bridge circuit.
  • a GMR element When, for example, a GMR element is used as the magnetoresistive effect elements 213A and 213B, a GMR element having a layer configuration including an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer can be employed.
  • an electrode may be formed on the insulating layer 212.
  • the electrodes are formed, for example, by forming an electrode material layer and then patterning the electrode material layer by photolithography and etching.
  • An insulating layer 214 is formed on the magnetoresistive effect elements 213A and 213B, the fixed resistance element, the electrodes, and the like so as to cover them.
  • a polyimide film, a silicon oxide film, or the like is used as the insulating layer 214.
  • the polyimide film can be formed by applying and curing a polyimide material.
  • the silicon oxide film can be formed using a method such as sputtering or plasma CVD.
  • Feedback coils 215A and 215B are formed on the insulating layer 214.
  • the feedback coils 215A and 215B can be formed by forming a coil material layer and then patterning the coil material layer by photolithography and etching. Alternatively, the feedback coils 215A and 215B can be formed by photolithography and plating after forming the base material layer.
  • coil electrodes are formed in the vicinity of the feedback coils 215A and 215B.
  • the coil electrode can be formed by forming an electrode material layer and then patterning the electrode material layer by photolithography and etching.
  • An insulating layer 216 is formed on the feedback coils 215A and 215B, the coil electrode, and the like so as to cover them.
  • a polyimide film, a silicon oxide film, or the like is used as the insulating layer 216.
  • the polyimide film can be formed by applying and curing a polyimide material.
  • the silicon oxide film can be formed using a method such as sputtering or plasma CVD.
  • a magnetic shield 217 is formed on the insulating layer 216 and in a region overlapping the magnetoresistive effect element 213B.
  • a high magnetic permeability material such as an amorphous magnetic material, a permalloy magnetic material, or an iron-based microcrystalline material can be used. Note that the magnetic shield 217 is not formed on the insulating layer 216 and in a region overlapping the magnetoresistive effect element 213A.
  • An insulating layer 218 is formed on the insulating layer 216, the magnetic shield 217, and the like.
  • a polyimide film, a silicon oxide film, or the like is used as the insulating layer 218, a polyimide film, a silicon oxide film, or the like is used.
  • the polyimide film can be formed by applying and curing a polyimide material.
  • the silicon oxide film can be formed using a method such as sputtering or plasma CVD.
  • a contact hole is formed in a predetermined region such as the insulating layer 216 or the insulating layer 218, and an electrode connected to a coil electrode or the like is formed (not shown).
  • the electrodes can be formed by forming an electrode material layer and then patterning the electrode material layer by photolithography and etching.
  • the first magnetic sensor 201A used for the first current sensor 11A and the second magnet used for the second current sensor 11B can be built into one chip.
  • the mounting positions of the first current sensor 11A and the second current sensor 11B and the mounting angles of the first current sensor 11A and the second current sensor 11B can be improved in accuracy.
  • the current measurement accuracy is enhanced.
  • the current sensor 11A and the second current sensor 11B in the same chip, the number of chips can be increased and the package cost can be reduced. Thereby, cost reduction of the current sensor 1 can be achieved. Further, the current sensor can be miniaturized as compared to the case where the first current sensor 11A and the second current sensor 11B are separate chips. In addition, since the first current sensor 11A and the second current sensor 11B can be disposed equidistantly from the current line, the measurement accuracy of the current can be enhanced.
  • the first magnetic sensor 201A used for the first current sensor 11A and the second magnetic sensor 201B used for the second current sensor 11B are built on the same substrate 211 to form a single chip. However, the present invention is not limited to this, and the first current sensor 11A and the second current sensor 11B may be separate chips.
  • the feedback coils 215A and 215B generate the induced magnetic fields A and B.
  • a canceling magnetic field that cancels out is generated, and adjustment is made so that the magnetic fields received by the magnetoresistive elements 213A and 213B become zero.
  • the second magnetic sensor 201B in the second current sensor 11B has a magnetic shield 217 in a region overlapping with the magnetoresistive effect element 213B. Since the magnetic shield 217 attenuates the induction magnetic field generated from the current to be measured, the induction magnetic field A received by the magnetoresistive effect element 213A not overlapping the magnetic shield 217 is received by the magnetoresistive effect element 213B overlapping the magnetic shield 217 It becomes larger than B. Further, since the cancellation magnetic field from the feedback coil 215B is enhanced by the magnetic shield 217, the effect of the cancellation magnetic field by the feedback coil 215B is greater than the effect of the cancellation magnetic field by the feedback coil 215A.
  • the number of turns (or number of turns) of feedback coil 215A may be smaller than the number of turns (or number of turns) of feedback coil 215B in order to further increase the resolution of first current sensor 11A.
  • FIG. 3 is a flowchart illustrating the current measurement algorithm.
  • the first current sensor 11A and the second current sensor 11B measure the current to be measured (step 301). Thus, from the first current sensor 11A, it is output the output voltages V 1 corresponding to the current to be measured, from the second current sensor 11A, the output voltage V 2 corresponding to the current to be measured is output.
  • step 302 it is determined which output of the first current sensor 11A or the second current sensor 11B is to be adopted.
  • the relationship between the output voltage V1 of the first current sensor 11A and the current to be measured (line A), and the relationship between the output voltage V2 of the second current sensor 11B and the current to be measured (Line B) is schematically shown.
  • the first current sensor 11A has a steep output characteristic, which makes it possible to measure a small amount of current accurately. That is, the resolution of the measurement is enhanced.
  • the second current sensor 11B has a moderate output characteristic, which makes it possible to measure a wide range of measured current. That is, the upper limit of the measurable range is raised.
  • the determination as to which output of the first current sensor 11A or the second current sensor 11B is adopted depends on the output voltage V1 of the first current sensor 11A and the threshold value V th1 determined in advance. This may be done by comparing the sizes (step 302). For the threshold value V th1 , for example, a voltage corresponding to the upper limit of the measurable range of the first current sensor 11A can be adopted (see FIG. 4). If V 1 is greater than V th1, that is, the measured current, if it exceeds the upper limit of the measurement range of the first current sensor 11A executes step 303. Otherwise, step 304 is performed.
  • step 303 the current value of the current to be measured is calculated from the output voltage V2 of the second current sensor 11B. If V 1 is greater than V th1, that is, the measured current, if it exceeds the upper limit of the measurement range of the first current sensor 11A, the upper limit of the measurable range of the high second current sensor 11B This is because it is appropriate to adopt the output and calculate the current value of the current to be measured.
  • step 304 the current value of the current to be measured is calculated from the output voltage V1 of the first current sensor 11A.
  • V 1 is equal to or less than V th1 , that is, when the measured current does not exceed the upper limit of the measurable range of the first current sensor 11A, the output of the first current sensor 11A with high resolution is adopted. It is appropriate to calculate the current value of the current to be measured.
  • step 303 when the current value of the current to be measured is calculated in step 303 or step 304, the measurement ends.
  • the magnitude of the output voltage V1 of the first current sensor 11A and the threshold V th1 are compared, the magnitude of the output voltage V2 of the second current sensor 11B and the threshold V th2 You may compare In this case, for example, the output voltage of the second current sensor 11A corresponding to the upper limit of the measurable range of the first current sensor 11A can be adopted as the threshold value V th2 (see FIG. 4). Then, V 2 is greater than V th2, the output of the second current sensor 11A employed, in other cases employing the output of the first current sensor 11B. That is, if V 2 is greater than V th2 in the (current to be measured is, if it exceeds the lower limit of the measurable range of the second current sensor 11B), and executes step 303, otherwise, Step 304 is performed.
  • the present invention is not limited to the above embodiment, and can be implemented with various modifications.
  • the connection relation, size, and the like of each element in the above-described embodiment can be appropriately changed and implemented.
  • the structures described in the above embodiments can be implemented in combination as appropriate.
  • the present invention can be implemented with appropriate modifications without departing from the scope of the present invention.
  • the current sensor of the present invention can be used, for example, to detect the magnitude of the current for driving a motor of an electric car or a hybrid car. Moreover, it is possible to use for measuring the dark current of the battery mounted in an electric vehicle etc.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

L'invention concerne la fourniture d'un capteur de courant qui possède une vaste gamme de mesure ainsi qu'une résolution élevée. Ledit capteur de courant (1) se caractérise en ce qu'il est pourvu : d'un premier capteur de courant (11A) équipé d'un premier capteur magnétique et ayant une première gamme mesurable ; d'un second capteur de courant (11B) équipé d'un second capteur magnétique et ayant une seconde gamme mesurable qui a une valeur limite supérieure plus élevée que la première gamme mesurable ; et un moyen de sélection de capteur (12) qui, selon l'amplitude du courant à mesurer qui mène à travers une ligne de courant, choisit la sortie du premier capteur de courant ou la sortie du second capteur de courant.
PCT/JP2011/070886 2010-10-20 2011-09-13 Capteur de courant Ceased WO2012053296A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012539640A JPWO2012053296A1 (ja) 2010-10-20 2011-09-13 電流センサ

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Application Number Priority Date Filing Date Title
JP2010-235047 2010-10-20
JP2010235047 2010-10-20

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WO2012053296A1 true WO2012053296A1 (fr) 2012-04-26

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2889631A1 (fr) * 2013-12-25 2015-07-01 Kabushiki Kaisha Toshiba Capteur de courant, module de mesure de courant et compteur intelligent
JP2015125019A (ja) * 2013-12-25 2015-07-06 株式会社東芝 電流センサ、電流測定モジュール及びスマートメータ
JP2015152422A (ja) * 2014-02-14 2015-08-24 アルプス・グリーンデバイス株式会社 電流センサ
WO2016021500A1 (fr) * 2014-08-05 2016-02-11 アルプス・グリーンデバイス株式会社 Capteur de courant électrique
JP2016038219A (ja) * 2014-08-05 2016-03-22 アルプス・グリーンデバイス株式会社 電流センサ
JP2016200522A (ja) * 2015-04-13 2016-12-01 三菱電機株式会社 電流検出装置およびこれを用いた磁界検出装置
WO2017199519A1 (fr) * 2016-05-17 2017-11-23 アルプス電気株式会社 Dispositif de détection magnétique du type à équilibre
EP3346238A1 (fr) 2017-01-10 2018-07-11 Melexis Technologies SA Capteur ayant plusieurs éléments de détection
JP2019039928A (ja) * 2018-10-25 2019-03-14 株式会社東芝 電流センサ、電流測定モジュール及びスマートメータ
JP2023147688A (ja) * 2022-03-30 2023-10-13 株式会社豊田自動織機 電力変換装置のセンサシステム

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JPH0943327A (ja) * 1995-08-03 1997-02-14 Nec Corp 磁気抵抗効果電流センサ
JP2002243766A (ja) * 2001-02-16 2002-08-28 Fuji Electric Co Ltd 電流センサ
JP2003315376A (ja) * 2002-04-18 2003-11-06 Aichi Micro Intelligent Corp 電流センサ
JP2004132790A (ja) * 2002-10-09 2004-04-30 Fuji Electric Holdings Co Ltd 電流センサ

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Publication number Priority date Publication date Assignee Title
JPH0943327A (ja) * 1995-08-03 1997-02-14 Nec Corp 磁気抵抗効果電流センサ
JP2002243766A (ja) * 2001-02-16 2002-08-28 Fuji Electric Co Ltd 電流センサ
JP2003315376A (ja) * 2002-04-18 2003-11-06 Aichi Micro Intelligent Corp 電流センサ
JP2004132790A (ja) * 2002-10-09 2004-04-30 Fuji Electric Holdings Co Ltd 電流センサ

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015125019A (ja) * 2013-12-25 2015-07-06 株式会社東芝 電流センサ、電流測定モジュール及びスマートメータ
JP2015125020A (ja) * 2013-12-25 2015-07-06 株式会社東芝 電流センサ、電流測定モジュール及びスマートメータ
EP2889631A1 (fr) * 2013-12-25 2015-07-01 Kabushiki Kaisha Toshiba Capteur de courant, module de mesure de courant et compteur intelligent
US10254315B2 (en) 2013-12-25 2019-04-09 Kabushiki Kaisha Toshiba Current sensor, current measuring module, and smart meter
JP2015152422A (ja) * 2014-02-14 2015-08-24 アルプス・グリーンデバイス株式会社 電流センサ
US10156589B2 (en) 2014-08-05 2018-12-18 Alps Electric Co., Ltd. Sensor module that switches plural sensors capable of measuring different ranges to extend dynamic range
WO2016021500A1 (fr) * 2014-08-05 2016-02-11 アルプス・グリーンデバイス株式会社 Capteur de courant électrique
JP2016038219A (ja) * 2014-08-05 2016-03-22 アルプス・グリーンデバイス株式会社 電流センサ
JPWO2016021500A1 (ja) * 2014-08-05 2017-04-27 アルプス電気株式会社 電流センサ
JP2016200522A (ja) * 2015-04-13 2016-12-01 三菱電機株式会社 電流検出装置およびこれを用いた磁界検出装置
WO2017199519A1 (fr) * 2016-05-17 2017-11-23 アルプス電気株式会社 Dispositif de détection magnétique du type à équilibre
EP3346238A1 (fr) 2017-01-10 2018-07-11 Melexis Technologies SA Capteur ayant plusieurs éléments de détection
US10712143B2 (en) 2017-01-10 2020-07-14 Melexis Technologies Sa Sensor with multiple sensing elements
JP2019039928A (ja) * 2018-10-25 2019-03-14 株式会社東芝 電流センサ、電流測定モジュール及びスマートメータ
JP2023147688A (ja) * 2022-03-30 2023-10-13 株式会社豊田自動織機 電力変換装置のセンサシステム

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