[go: up one dir, main page]

WO2012083944A3 - Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche - Google Patents

Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche Download PDF

Info

Publication number
WO2012083944A3
WO2012083944A3 PCT/DE2011/075306 DE2011075306W WO2012083944A3 WO 2012083944 A3 WO2012083944 A3 WO 2012083944A3 DE 2011075306 W DE2011075306 W DE 2011075306W WO 2012083944 A3 WO2012083944 A3 WO 2012083944A3
Authority
WO
WIPO (PCT)
Prior art keywords
rear side
silicon solar
solar cells
producing silicon
texture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2011/075306
Other languages
English (en)
French (fr)
Other versions
WO2012083944A2 (de
Inventor
Adolf MÜNZER
Andreas Teppe
Jan Schöne
Mathias Hein
Jens KRÜMBERG
Sandra KRÜMBERG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Photovoltaics AG
Original Assignee
Centrotherm Photovoltaics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics AG filed Critical Centrotherm Photovoltaics AG
Priority to EP11830092.0A priority Critical patent/EP2652802A2/de
Priority to US13/993,757 priority patent/US20140051199A1/en
Priority to CN201180067305.9A priority patent/CN103354954B/zh
Publication of WO2012083944A2 publication Critical patent/WO2012083944A2/de
Publication of WO2012083944A3 publication Critical patent/WO2012083944A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Abstract

Verfahren zur Herstellung einer einseitig glattgeätzten Siliziumsolarzelle, bei welchem eine Vorderseite und eine Rückseite eines Siliziumsubstrats glattgeätzt werden (10), nachfolgend eine dielektrische Beschichtung auf der Rückseite des Siliziumsubstrats ausgebildet wird (14, 16) und nachfolgend die Vorderseite des Siliziumsubstrats mittels eines Texturätzmediums texturiert wird (20), wobei die auf der Rückseite des Siliziumsubstrats ausgebildete dielektrische Beschichtung als Ätzmaskierung gegenüber dem Texturätzmedium verwendet wird.
PCT/DE2011/075306 2010-12-13 2011-12-09 Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche Ceased WO2012083944A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP11830092.0A EP2652802A2 (de) 2010-12-13 2011-12-09 Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche
US13/993,757 US20140051199A1 (en) 2010-12-13 2011-12-09 Method for producing silicon solor cells having a front-sided texture and a smooth rear side
CN201180067305.9A CN103354954B (zh) 2010-12-13 2011-12-09 制作具有正面纹理和平滑背面表面的硅太阳能电池的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010054370.5 2010-12-13
DE102010054370A DE102010054370A1 (de) 2010-12-13 2010-12-13 Verfahren zur Herstellung von Siliziumsolarzellen mit vorderseitiger Textur und glatter Rückseitenoberfläche

Publications (2)

Publication Number Publication Date
WO2012083944A2 WO2012083944A2 (de) 2012-06-28
WO2012083944A3 true WO2012083944A3 (de) 2012-11-01

Family

ID=45922620

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2011/075306 Ceased WO2012083944A2 (de) 2010-12-13 2011-12-09 Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche

Country Status (5)

Country Link
US (1) US20140051199A1 (de)
EP (1) EP2652802A2 (de)
CN (1) CN103354954B (de)
DE (1) DE102010054370A1 (de)
WO (1) WO2012083944A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150040983A1 (en) * 2013-08-07 2015-02-12 Solarworld Industries America, Inc. Acidic etching process for si wafers
US20180114691A1 (en) * 2013-08-07 2018-04-26 SolarWorld Americas, Inc. Methods for etching as-cut silicon wafers and producing solar cells
US9837259B2 (en) * 2014-08-29 2017-12-05 Sunpower Corporation Sequential etching treatment for solar cell fabrication
CN107431099B (zh) * 2015-03-24 2019-09-03 株式会社钟化 太阳能电池用结晶硅基板的制造方法、结晶硅系太阳能电池的制造方法及结晶硅系太阳能电池模块的制造方法
CN107658367A (zh) * 2016-07-26 2018-02-02 福建金石能源有限公司 一种异质结电池的湿化学处理方法
DE102018206980A1 (de) 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und Vorrichtung zur Reinigung von geätzten Oberflächen eines Halbleitersubstrats
DE102018206978A1 (de) 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und Vorrichtung zur Behandlung von geätzten Oberflächen eines Halbleitersubstrats unter Verwendung von ozonhaltigem Medium

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040112426A1 (en) * 2002-12-11 2004-06-17 Sharp Kabushiki Kaisha Solar cell and method of manufacturing the same
WO2009067483A1 (en) * 2007-11-19 2009-05-28 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
US20090280597A1 (en) * 2008-03-25 2009-11-12 Kapila Wijekoon Surface cleaning and texturing process for crystalline solar cells
US20100015751A1 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998288B1 (en) * 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
EP2201607A4 (de) * 2007-10-17 2017-12-27 Heraeus Precious Metals North America Conshohocken LLC Dielektrische beschichtung für einseitige solarzellen mit rückseitigem kontakt
KR101168589B1 (ko) * 2008-03-26 2012-07-30 엘지전자 주식회사 계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US7951637B2 (en) * 2008-08-27 2011-05-31 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
WO2010032933A2 (en) * 2008-09-16 2010-03-25 Lg Electronics Inc. Solar cell and texturing method thereof
DE102008056086A1 (de) * 2008-11-06 2010-05-12 Gp Solar Gmbh Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen sowie Verfahren zu dessen Herstellung
WO2010090090A1 (ja) * 2009-02-05 2010-08-12 シャープ株式会社 半導体装置の製造方法および半導体装置
KR20120045424A (ko) * 2010-10-29 2012-05-09 삼성전자주식회사 태양전지 제조방법
US8664015B2 (en) * 2011-10-13 2014-03-04 Samsung Sdi Co., Ltd. Method of manufacturing photoelectric device
US9412895B2 (en) * 2012-04-04 2016-08-09 Samsung Sdi Co., Ltd. Method of manufacturing photoelectric device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040112426A1 (en) * 2002-12-11 2004-06-17 Sharp Kabushiki Kaisha Solar cell and method of manufacturing the same
WO2009067483A1 (en) * 2007-11-19 2009-05-28 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
US20090280597A1 (en) * 2008-03-25 2009-11-12 Kapila Wijekoon Surface cleaning and texturing process for crystalline solar cells
US20100015751A1 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SZLUFCIK J ET AL: "Low-Cost Industrial Technologies of Crystalline Silicon Solar Cells", PROCEEDINGS OF THE IEEE, IEEE. NEW YORK, US, vol. 85, no. 5, 1 May 1997 (1997-05-01), pages 711 - 730, XP011043842, ISSN: 0018-9219, DOI: 10.1109/5.588971 *

Also Published As

Publication number Publication date
US20140051199A1 (en) 2014-02-20
CN103354954B (zh) 2016-06-29
CN103354954A (zh) 2013-10-16
EP2652802A2 (de) 2013-10-23
DE102010054370A1 (de) 2012-06-14
WO2012083944A2 (de) 2012-06-28

Similar Documents

Publication Publication Date Title
WO2012083944A3 (de) Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche
WO2008143885A3 (en) Protection layer for fabricating a solar cell
WO2009119995A3 (en) Method of texturing solar cell and method of manufacturing solar cell
WO2009084933A3 (en) Solar cell, mehtod of manufacturing the same, and method of texturing solar cell
WO2009011185A1 (ja) 太陽電池の製造方法
WO2013049173A3 (en) Improved intrench profile
WO2011122853A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2011139435A3 (en) High-temperature selective dry etch having reduced post-etch solid residue
WO2012118847A3 (en) Solution processible hardmarks for high resolusion lithography
WO2011092402A3 (fr) Cellule photovoltaïque comprenant un film mince de passivation en oxyde cristallin de silicium et procédé de réalisation
JP2013511151A5 (de)
WO2013049223A3 (en) Insensitive dry removal process for semiconductor integration
WO2011062791A3 (en) Texturing surface of light-absorbing substrate
WO2010009295A3 (en) Hybrid heterojunction solar cell fabrication using a metal layer mask
WO2011061694A3 (en) Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
WO2011078521A3 (ko) 후면전계형 이종접합 태양전지 및 그 제조방법
WO2010141814A3 (en) Passivation process for solar cell fabrication
WO2008114252A3 (en) Microneedle structures and corresponding production methods employing a backside wet etch
SG165307A1 (en) Glass substrate for electronic device and method of producing electronic device
WO2012136387A3 (de) Metallpartikelhaltiges und ätzendes druckbares medium insbesondere zur kontaktbildung mit silizium beim herstellen einer solarzelle
WO2011040781A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2012134061A3 (en) Solar cell and method for manufacturing the same
WO2010022849A3 (de) Randentschichtung von dünnschicht-solar-modulen mittels ätzen
WO2011002212A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2014044482A3 (en) Method for fabricating silicon photovoltaic cells

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2011830092

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11830092

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 13993757

Country of ref document: US