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WO2011120598A8 - Method for production of semiconductor grade silicon ingots, reusable crucibles and method for manufacturing them - Google Patents

Method for production of semiconductor grade silicon ingots, reusable crucibles and method for manufacturing them Download PDF

Info

Publication number
WO2011120598A8
WO2011120598A8 PCT/EP2010/065465 EP2010065465W WO2011120598A8 WO 2011120598 A8 WO2011120598 A8 WO 2011120598A8 EP 2010065465 W EP2010065465 W EP 2010065465W WO 2011120598 A8 WO2011120598 A8 WO 2011120598A8
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
production
grade silicon
reusable
semiconductor grade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/065465
Other languages
French (fr)
Other versions
WO2011120598A1 (en
Inventor
Kai Johansen
Stein Julsrud
Tyke Laurence Naas
Gero Wolfgang Neuroth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
REC Wafer Norway AS
Original Assignee
REC Wafer Norway AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB1005399A external-priority patent/GB2479165A/en
Application filed by REC Wafer Norway AS filed Critical REC Wafer Norway AS
Priority to CN201080066044.4A priority Critical patent/CN102859049B/en
Publication of WO2011120598A1 publication Critical patent/WO2011120598A1/en
Publication of WO2011120598A8 publication Critical patent/WO2011120598A8/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

This invention relates to a method for production of ingots of semiconductor grade silicon, including solar grade silicon, to reusable crucibles employed in the method and a method for manufacturing the reusable crucibles, wherein the method is characterised in that the silicon ingots is produced in reusable crucibles made of carbon fibre-reinforced silicon carbide composite which has a coefficient of thermal expansion of less than 4- 10-6 K-1 at temperatures above 400 °C and less than 3- 10-6 K-1 at temperatures below 400 °C, and a thermal conductivity of at least 5 W/mK at temperatures from 25 °C to 1500 °C.
PCT/EP2010/065465 2010-03-30 2010-10-14 Method for production of semiconductor grade silicon ingots, reusable crucibles and method for manufacturing them Ceased WO2011120598A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080066044.4A CN102859049B (en) 2010-03-30 2010-10-14 Manufacture the method for semiconductor grade silicon ingot, the crucible that can re-use and manufacture method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1005399A GB2479165A (en) 2009-10-14 2010-03-30 Reusable crucible
GB1005399.9 2010-03-30

Publications (2)

Publication Number Publication Date
WO2011120598A1 WO2011120598A1 (en) 2011-10-06
WO2011120598A8 true WO2011120598A8 (en) 2011-12-22

Family

ID=44720368

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/065465 Ceased WO2011120598A1 (en) 2010-03-30 2010-10-14 Method for production of semiconductor grade silicon ingots, reusable crucibles and method for manufacturing them

Country Status (2)

Country Link
CN (1) CN102859049B (en)
WO (1) WO2011120598A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103628126A (en) * 2012-08-21 2014-03-12 浙江昱辉阳光能源有限公司 Manufacturing method for monocrystalloid crystalline silica ingot and polysilicon ingot furnace
CN103628125A (en) * 2012-08-21 2014-03-12 浙江昱辉阳光能源有限公司 Polysilicon ingot furnace and polysilicon ingot casting method
CN104703914B (en) * 2012-10-10 2017-09-08 浙江昱辉阳光能源有限公司 Polycrystal silicon ingot and its manufacture method, crucible
DE102014102980B4 (en) 2014-03-06 2017-12-21 Ald Vacuum Technologies Gmbh Hybrid crucible for the crystallization of materials, use of the hybrid crucible, process for the production of crystalline material and crystalline product
DE102017204257A1 (en) 2017-03-14 2018-09-20 Schunk Kohlenstofftechnik Gmbh Coated product and method of manufacture

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2614321A1 (en) * 1987-04-27 1988-10-28 Europ Propulsion CARTRIDGE OF COMPOSITE MATERIALS FOR A DEVICE FOR THE PRODUCTION OF MONOCRYSTALS.
DE19710105A1 (en) 1997-03-12 1998-09-17 Sgl Technik Gmbh Silicon carbide body reinforced with short graphite fibers
JPH10273369A (en) * 1997-03-28 1998-10-13 Nissan Motor Co Ltd Method for producing C / C composite material excellent in Si attack resistance and C / C crucible
DE19749462C1 (en) 1997-11-10 1999-03-04 Deutsch Zentr Luft & Raumfahrt Moulded body reinforced with carbon fibres
JP2003514760A (en) * 1999-11-24 2003-04-22 スネクマ・モートゥール Method for producing a container of thermostructural composite, container obtained by the method, and use of the container as a crucible support
DE10212043B4 (en) 2002-03-19 2005-05-25 Sgl Carbon Ag Process for the infiltration of porous carbon composite bodies, wicks of carbon material and their use
DE10359484A1 (en) 2003-12-18 2005-07-14 Deutsches Zentrum für Luft- und Raumfahrt e.V. Method for producing a component from a fiber composite material and fiber composite material
JP2006131451A (en) * 2004-11-05 2006-05-25 Tokai Carbon Co Ltd Single crystal pulling crucible and manufacturing method thereof
US20090314198A1 (en) * 2006-06-23 2009-12-24 Rec Scanwafer As Device and method for production of semiconductor grade silicon
CN101479410A (en) * 2006-06-23 2009-07-08 Rec斯坎沃佛股份有限公司 Method and crucible for directional solidification of semiconductor grade polycrystalline silicon ingots
KR20090024797A (en) * 2006-06-23 2009-03-09 알이씨 스캔웨이퍼 에이에스 Reusable crucibles and methods of making them
CN101643933B (en) * 2009-08-19 2012-05-02 湖南南方搏云新材料有限责任公司 CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible and manufacturing process thereof

Also Published As

Publication number Publication date
WO2011120598A1 (en) 2011-10-06
CN102859049B (en) 2016-01-20
CN102859049A (en) 2013-01-02

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