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WO2012058656A3 - Stress regulated semiconductor and associated methods - Google Patents

Stress regulated semiconductor and associated methods Download PDF

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Publication number
WO2012058656A3
WO2012058656A3 PCT/US2011/058487 US2011058487W WO2012058656A3 WO 2012058656 A3 WO2012058656 A3 WO 2012058656A3 US 2011058487 W US2011058487 W US 2011058487W WO 2012058656 A3 WO2012058656 A3 WO 2012058656A3
Authority
WO
WIPO (PCT)
Prior art keywords
stress
semiconductor
layer
associated methods
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/058487
Other languages
French (fr)
Other versions
WO2012058656A2 (en
Inventor
Chien-Min Sung
Ming Chi Kan
Shao Chung Hu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RiteDia Corp
Original Assignee
RiteDia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RiteDia Corp filed Critical RiteDia Corp
Priority to CN2011800061052A priority Critical patent/CN102893419A/en
Publication of WO2012058656A2 publication Critical patent/WO2012058656A2/en
Publication of WO2012058656A3 publication Critical patent/WO2012058656A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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    • H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29186—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29187—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29193—Material with a principal constituent of the material being a solid not provided for in groups H01L2224/291 - H01L2224/29191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thin Film Transistor (AREA)

Abstract

Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/°C.
PCT/US2011/058487 2010-10-29 2011-10-29 Stress regulated semiconductor and associated methods Ceased WO2012058656A2 (en)

Priority Applications (1)

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CN2011800061052A CN102893419A (en) 2010-10-29 2011-10-29 Stress regulated semiconductor device and related method

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US40844710P 2010-10-29 2010-10-29
US61/408,447 2010-10-29

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WO2012058656A2 WO2012058656A2 (en) 2012-05-03
WO2012058656A3 true WO2012058656A3 (en) 2012-07-19

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EP2789972B1 (en) 2013-04-12 2017-08-16 Hexagon Technology Center GmbH Measuring device with deformable optical element
TW201601343A (en) * 2014-06-30 2016-01-01 新世紀光電股份有限公司 Semiconductor structure
SG10201503260YA (en) * 2015-04-24 2016-11-29 Wangi Ind Co Pte Ltd A Substantially Transparent Coating
TWI703726B (en) 2016-09-19 2020-09-01 新世紀光電股份有限公司 Semiconductor device containing nitrogen
CN108417672B (en) * 2018-02-01 2019-07-19 华灿光电(苏州）有限公司 A kind of light-emitting diode epitaxial wafer and preparation method thereof
CN112086402B (en) * 2019-06-12 2022-12-13 钰桥半导体股份有限公司 Circuit board with bridging piece crossing interface
JP7240511B2 (en) * 2019-09-02 2023-03-15 株式会社東芝 zygote
CN113300219A (en) * 2021-05-25 2021-08-24 威科赛乐微电子股份有限公司 Warpage-adjustable Vcsel epitaxial structure and preparation method thereof

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WO2010092972A1 (en) * 2009-02-13 2010-08-19 電気化学工業株式会社 Composite substrate for led light emitting element, method of production of same, and led light emitting element

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US7012011B2 (en) * 2004-06-24 2006-03-14 Intel Corporation Wafer-level diamond spreader
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US20060176924A1 (en) * 2005-02-05 2006-08-10 Samsung Electronics Co., Ltd. Semiconductor light emitting device having effective cooling structure and method of manufacturing the same
US20070278496A1 (en) * 2006-06-05 2007-12-06 Yuh-Ren Shieh Light emitting diode
US20080251798A1 (en) * 2007-04-13 2008-10-16 Oki Data Corporation Semiconductor device, LED head and image forming apparatus
US20080296584A1 (en) * 2007-05-30 2008-12-04 Sumitomo Electric Industries, Ltd. III-V Nitride Semiconductor Layer-Bonded Substrate and Semiconductor Device
WO2010092972A1 (en) * 2009-02-13 2010-08-19 電気化学工業株式会社 Composite substrate for led light emitting element, method of production of same, and led light emitting element

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WO2012058656A2 (en) 2012-05-03
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