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WO2011111888A1 - Coupleur/circulateur intégré et amplificateur de puissance le comprenant - Google Patents

Coupleur/circulateur intégré et amplificateur de puissance le comprenant Download PDF

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Publication number
WO2011111888A1
WO2011111888A1 PCT/KR2010/001537 KR2010001537W WO2011111888A1 WO 2011111888 A1 WO2011111888 A1 WO 2011111888A1 KR 2010001537 W KR2010001537 W KR 2010001537W WO 2011111888 A1 WO2011111888 A1 WO 2011111888A1
Authority
WO
WIPO (PCT)
Prior art keywords
coupler
circulator
dielectric substrate
present
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/001537
Other languages
English (en)
Korean (ko)
Inventor
김태원
강승렬
강민우
오정훈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Partron Co Ltd
Original Assignee
Partron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Partron Co Ltd filed Critical Partron Co Ltd
Priority to CN201080002196.8A priority Critical patent/CN102754275B/zh
Publication of WO2011111888A1 publication Critical patent/WO2011111888A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/32—Non-reciprocal transmission devices
    • H01P1/38—Circulators
    • H01P1/383—Junction circulators, e.g. Y-circulators
    • H01P1/387—Strip line circulators

Definitions

  • the present invention relates to an integrated coupler-circulator in which a coupler and a circulator are integrated.
  • a high power amplifier is used for base station (BTS) equipment, and a power divider, a power amplifier, and a power combiner are used at input and output terminals of the high power amplifier.
  • BTS base station
  • a circulator or isolator
  • each of these devices is configured as a separate individual device, a lot of power loss occurs in the connection line connecting the individual devices, and unnecessary additional losses and costs are generated when matching between the individual devices. Therefore, in order to eliminate such unnecessary loss and cost, it is necessary to integrate and integrate individual devices.
  • the technical problem to be solved by the present invention is to provide an integrated coupler-circulator that can reduce the unnecessary power loss and the matching cost between devices in the connection line.
  • Another technical problem to be solved by the present invention is to provide a power amplifier in which unnecessary power loss and matching cost between devices in the connection line are reduced.
  • An aspect of an integrated coupler-circulator of the present invention for achieving the above technical problem includes a dielectric substrate, a coupler formed inside the dielectric substrate, and a circulator mounted on the dielectric substrate.
  • One aspect of the power amplifier of the present invention for achieving the above another technical problem comprises a base substrate and the integrated coupler-circulator mounted on the base substrate.
  • a power divider for receiving and amplifying the power distributed from the power divider, and receives the amplified power from the amplification unit and combines the output And an integrated coupler-circulator.
  • the coupler and the circulator are integrated, unnecessary power loss may be reduced in the connection line, and matching costs and losses occurring when matching between devices may be reduced. have.
  • the heat sink may be additionally formed on the dielectric substrate to efficiently solve the heat dissipation problem that may occur in the device integration.
  • the RF performance of the device can be improved by forming various additional RF circuits on the dielectric substrate.
  • FIG. 1 is a perspective view of an integrated coupler-circulator according to a first embodiment of the present invention.
  • FIG. 2 is a perspective view of a coupler-circulator according to a modified embodiment of the first embodiment of the present invention.
  • 3 and 4 are diagrams for explaining a dielectric substrate of the integrated coupler-circulator according to the first embodiment of the present invention.
  • FIG. 5 is a diagram for describing a circulator of the integrated coupler-circulator according to the first embodiment of the present invention.
  • FIG. 6 is a circuit diagram of an integrated coupler-circulator according to a first embodiment of the present invention.
  • FIG. 7 is a perspective view of an integrated coupler-circulator in accordance with a second embodiment of the present invention.
  • FIG. 8 is a perspective view of an integrated coupler-circulator according to a modified embodiment of the second embodiment of the present invention.
  • FIG. 9 is a circuit diagram of an integrated coupler-circulator in accordance with a second embodiment of the present invention and variations thereof.
  • FIG. 10 is a perspective view of an integrated coupler-circulator in accordance with a third embodiment of the present invention.
  • FIG. 11 is a circuit diagram of an integrated coupler-circulator according to a third embodiment of the present invention.
  • FIG. 12 is a cross-sectional view of the dielectric substrate of the integrated coupler-circulator according to the fourth embodiment of the present invention.
  • FIG. 13 is a circuit diagram of an integrated coupler-circulator according to a fourth embodiment of the present invention.
  • FIG. 14 is a circuit diagram of an integrated coupler-circulator according to a fifth embodiment of the present invention.
  • FIG. 15 is a perspective view of a dielectric substrate of the integrated coupler-circulator according to the sixth embodiment of the present invention.
  • 16 is a conceptual diagram of a power amplifier according to an embodiment of the present invention.
  • 17 is a circuit diagram of a power amplifier according to an embodiment of the present invention.
  • first, second, etc. are used to describe various components, these components are of course not limited by these terms. These terms are only used to distinguish one component from another. Therefore, of course, the first component mentioned below may be a second component within the technical spirit of the present invention.
  • Embodiments described herein will be described with reference to plan and cross-sectional views, which are ideal schematic diagrams of the invention. Accordingly, shapes of the exemplary views may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include variations in forms generated by the manufacturing process. Thus, the regions illustrated in the figures have schematic attributes, and the shape of the regions illustrated in the figures is intended to illustrate a particular form of region of the device, and is not intended to limit the scope of the invention.
  • FIG. 1 is a perspective view of an integrated coupler-circulator according to a first embodiment of the present invention
  • FIG. 2 is a perspective view of a coupler-circulator according to a modified embodiment of the first embodiment of the present invention
  • 3 and 4 are views for explaining the dielectric substrate of the integrated coupler-circulator according to the first embodiment of the present invention
  • Figure 5 is a circulator of the integrated coupler-circulator according to the first embodiment of the present invention
  • a diagram for explaining. 6 is a circuit diagram of an integrated coupler-circulator according to a first embodiment of the present invention.
  • the integrated coupler-circulator may include a dielectric substrate 100, a coupler (130 of FIG. 4), and a circulator 200.
  • the dielectric substrate 100 may be a substrate formed by stacking a multilayer dielectric, and a coupler (130 of FIG. 4) may be formed inside the dielectric substrate 100. This will be described in more detail with reference to FIGS. 3 and 4.
  • the dielectric substrate 100 may include a first ground plane 105, a first dielectric layer 110, a coupler 130, a second dielectric layer 135, and a second ground plane 140. have.
  • the first ground plane 105 may be a metal conductive surface at least partially connected to the ground terminal, and a first dielectric layer 110 formed by stacking a dielectric material may be formed on the first ground plane 105.
  • Coupler 130 may be formed on first dielectric layer 110. Specifically, the coupler 130 is formed on the first conductive layer 115 formed on the first dielectric layer 110, the third dielectric layer 120 formed on the first conductive layer 115 and the third dielectric layer 120.
  • the second conductive layer 125 may be included. That is, the coupler of the integrated coupler-circulator according to the first embodiment of the present invention may be a 3 dB hybrid coupler.
  • the first conductive layer 115 and the second conductive layer 125 may include an input terminal (not shown) of the dielectric substrate 100 through vias (not shown) formed in or on the surface of the dielectric substrate 100. It may be connected to an output terminal (not shown).
  • the second dielectric layer 135 may be formed on the coupler 130, and the second ground plane 140 may be formed on the second dielectric layer 135.
  • the second ground plane 140 may be formed in the same structure and shape as the first ground plane 105 described above, but the present invention is not limited thereto.
  • the dielectric substrate 100 of the integrated coupler-circulator according to the first embodiment of the present invention may be a multi-layer low temperature cofired ceramic (LTCC) substrate or a Teflon substrate. The invention is also not limited thereto.
  • LTCC multi-layer low temperature cofired ceramic
  • the circulator 200 may be mounted on the dielectric substrate 100 as described above with reference to FIG. 1.
  • the circulator 200 may be formed by sequentially stacking ferrites, junctions, magnetic bodies, and electrode plates as shown in FIG. 5.
  • the first port 205 of the circulator 200 may be connected to the coupler 130 formed in the dielectric substrate 100, and the second port 215 may be connected to an output terminal in the future.
  • the third port 210 may be a port for outputting a reflected wave introduced into the second port 215 and terminating it.
  • the circulator 200 may be implemented in various shapes capable of SMT. That is, the circulator may be implemented in an SMD I / O pin type structure as shown in FIG. 1 or in an SMD I / O lead type structure as shown in FIG. 2.
  • FIGS. 7 to 9 an integrated coupler-circulator according to a second embodiment of the present invention will be described with reference to FIGS. 7 to 9.
  • the same descriptions as those of the integrated coupler-circulator according to the first embodiment of the present invention will be omitted. That is, the following description will focus on the difference.
  • FIG. 7 is a perspective view of an integrated coupler-circulator according to a second embodiment of the present invention
  • FIG. 8 is a perspective view of an integrated coupler-circulator according to a modified embodiment of the second embodiment of the present invention
  • 9 is a circuit diagram of an integrated coupler-circulator in accordance with a second embodiment of the present invention and variations thereof.
  • the integrated coupler-circulator may further include a first termination part 300 and a second termination part 310.
  • the first termination part 300 is a part for terminating a signal generated by the coupler (130 of FIG. 4) formed in the dielectric substrate 100, and is formed on the dielectric substrate 100 as shown in FIG. 7. Can be. In this case, the first termination part 300 may be connected through a coupler (130 of FIG. 4) formed in the dielectric substrate 100 and a via 320 formed in the dielectric substrate 100. Referring to FIG. 9, the first termination part 300 may be formed of a predetermined resistance element to terminate a signal generated by the coupler 130 of FIG. 4.
  • the second termination unit 310 is a portion for terminating the reflected signal introduced into the circulator 200 from the output terminal, as shown in Figure 7 may be formed on the dielectric substrate 100.
  • the second termination part 310 may be connected to the third port 210 of the circulator 200.
  • the second termination unit 310 may also be a portion that is formed of a predetermined resistance element to terminate the reflected signal introduced into the circulator 200.
  • the first termination part 300 and the second termination part 310 are formed on the dielectric substrate 100, but the first termination part 300 and the second termination part 310 are formed on the dielectric substrate. It may be formed inside the (100). This is the same as forming a coupler (130 of FIG. 4) inside the dielectric substrate 100, a predetermined resistance element is formed between the dielectric layers (110, 120, 135) and the coupler (130 of FIG. 4) and the circular Since it may be formed in connection with the radar 200, detailed description thereof will be omitted.
  • the integrated coupler-circulator according to the modified embodiment of the second embodiment of the present invention may further include a heat dissipation unit 330.
  • the heat dissipation part 330 may be formed outside the dielectric substrate 100 (for example, as shown in FIG. 8 below). More specifically, referring to FIGS. 8 and 9, the heat dissipation unit 330 may be, for example, a heat sink formed under the dielectric substrate 100.
  • the heat dissipation unit 330 is a circular coupler (130 of FIG. 4) formed in the dielectric substrate 100 through vias (not shown) formed in or on the surface of the dielectric substrate 100 and a circular element mounted on the dielectric substrate 100. It may be connected to the radar 200.
  • the dielectric substrate 100 may be spaced apart from the base substrate 800 (FIG. 16) to be mounted in the future. This may be a problem when the dielectric substrate 100 is mounted on the base substrate (800 of FIG. 16) in the SMT process. Therefore, an input / output (I / O) pinhole 410 may be formed in the dielectric substrate 100. Can be. In the future, the I / O pins are fixed to the I / O pinholes 410 so that the separation problem may be solved by mounting the dielectric substrate 100 on the base substrate (800 of FIG. 16).
  • the integrated coupler-circulator according to the embodiments of the present invention may improve RF performance of the device by forming various additional RF circuits on the dielectric substrate 100.
  • various additional RF circuits on the dielectric substrate 100.
  • FIGS. 10 and 11 an integrated coupler-circulator according to a third embodiment of the present invention will be described. In the following, similar descriptions to the above-described embodiments will be omitted.
  • FIG. 10 is a perspective view of an integrated coupler-circulator according to a third embodiment of the present invention
  • FIG. 11 is a circuit diagram of an integrated coupler-circulator according to a third embodiment of the present invention.
  • the integrated coupler-circulator may further include a low pass filter 500.
  • the low pass filter 500 may be formed on the dielectric substrate 100 as shown in FIG. 10. Referring to FIGS. 10 and 11, the low pass filter 500 has one end connected to a coupler (130 of FIG. 4) and via 320 formed inside the dielectric substrate 100, and the other end of the low pass filter 500. It may be connected to the circulator 200 through 205. In this case, the low pass filter 500 may include a predetermined capacitor (not shown) and a predetermined inductor (not shown).
  • the low pass filter 500 may also be formed inside the dielectric substrate 100. That is, the low pass filter 500 may be formed by forming a predetermined capacitor and a predetermined inductor by forming a predetermined conductor pattern inside the dielectric substrate 100. As described above, since the termination parts 300 and 310 are formed in the dielectric substrate 100, the same principle is omitted.
  • the low pass filter function may be additionally performed.
  • FIGS. 12 and 13 an integrated coupler-circulator according to a fourth embodiment of the present invention will be described. In the following, similar descriptions to the above-described embodiments will be omitted.
  • FIG. 12 is a cross-sectional view of the dielectric substrate of the integrated coupler-circulator according to the fourth embodiment of the present invention
  • FIG. 13 is a circuit diagram of the integrated coupler-circulator according to the fourth embodiment of the present invention.
  • the dielectric substrate 100 may additionally include the first ground plane 105, the first dielectric layer 110, the coupler 130, the second dielectric layer 135, and the second ground plane 140.
  • the third conductive layer 109, the fourth dielectric layer 108, and the fifth dielectric layer 107 may be further included.
  • the third conductive layer 109, the first dielectric layer 110, the third dielectric layer 120, and the first conductive layer 115 may form a directional coupler 600. That is, referring to FIG. 12 and FIG. 13, the integrated coupler-circulator according to the fourth embodiment of the present invention may further include a directional coupler 600 formed inside the dielectric substrate 100. This directional coupler 600 may be used as a forward power monitor.
  • the forward power monitoring function may be additionally performed.
  • FIG. 14 is a circuit diagram of an integrated coupler-circulator according to a fifth embodiment of the present invention.
  • the integrated coupler-circulator may include a low pass filter 500 and a directional coupler 130 at the same time.
  • both the low pass filter 500 and the directional coupler 130 may be formed inside the dielectric substrate 100, and the low pass filter 500 may be disposed on the dielectric substrate 100 and the directional coupler 130. May be formed inside the dielectric substrate 100.
  • FIG. 15 is a perspective view of a dielectric substrate of the integrated coupler-circulator according to the sixth embodiment of the present invention.
  • a defect ground structure (DGS) 700 may be formed on the dielectric substrate 100 of the integrated coupler-circulator.
  • a defect ground structure 700 in which the ground plane is etched in a predetermined pattern shape may be formed on the first ground plane (105 in FIG. 4) or the second ground plane (140 in FIG. 4) of the dielectric substrate 100. have.
  • the defect ground structure 700 etched in the shape of a dumbbell is illustrated in FIG. 15, the present invention is not limited thereto, and the shape of the defect ground structure 700 may be changed as needed.
  • the harmonic component of the power signal can be removed, thereby making it possible to manufacture the integrated coupler-circulator with improved performance.
  • FIG. 16 is a conceptual diagram of a power amplifier according to an embodiment of the present invention
  • FIG. 17 is a circuit diagram of a power amplifier according to an embodiment of the present invention.
  • a power amplifier includes a base substrate 800, a power divider 810 mounted on the base substrate 800, an amplifier 820, and an integrated coupler-circuit according to various embodiments of the present disclosure. It may include the radar (100, 200).
  • the power divider 810 may be mounted on the base substrate 800 to distribute input power, and the amplifier 820 may be mounted on the base substrate 800, but the power divider may be used. 810 may be used to amplify the distributed power.
  • the integrated coupler-circulator 100 and 200 may be mounted on the base substrate 800 and coupled to the amplifier 820 to combine the amplified power and output the same. Can serve as
  • the invention is applicable to the telecommunications industry using couplers and circulators. However, it is not limited thereto.

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  • Amplifiers (AREA)
  • Transceivers (AREA)

Abstract

L'invention porte sur un coupleur/circulateur intégré. Le coupleur/circulateur intégré comprend un substrat diélectrique, un coupleur formé dans le substrat diélectrique, et un circulateur monté sur le substrat diélectrique.
PCT/KR2010/001537 2010-03-09 2010-03-11 Coupleur/circulateur intégré et amplificateur de puissance le comprenant Ceased WO2011111888A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080002196.8A CN102754275B (zh) 2010-03-09 2010-03-11 集成耦合器-环行器以及包括该集成耦合器-环行器的功率放大器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0020763 2010-03-09
KR1020100020763A KR101136519B1 (ko) 2010-03-09 2010-03-09 일체형 커플러-써큘레이터 및 그를 포함하는 전력 증폭기

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Publication Number Publication Date
WO2011111888A1 true WO2011111888A1 (fr) 2011-09-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102623779A (zh) * 2012-04-18 2012-08-01 华为技术有限公司 一种集成的环形器

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CN104868212B (zh) * 2014-02-25 2017-11-14 南京理工大学 基于GaN MMIC功率放大器的混合集成有源环行器
CN104752798B (zh) * 2015-03-12 2017-10-24 西安电子科技大学 可重用微波环行器
US9871501B2 (en) * 2015-06-22 2018-01-16 Nxp Usa, Inc. RF circuit with multiple-definition RF substrate and conductive material void under a bias line
KR101637923B1 (ko) * 2015-09-24 2016-07-11 쓰리알웨이브 (주) 방향성 결합기의 기능을 내재한 서큘레이터 모듈
CN108933572A (zh) * 2018-07-10 2018-12-04 苏州远创达科技有限公司 一种射频功率放大器多芯片模块
CN119208947A (zh) * 2024-11-26 2024-12-27 深圳市诺信博通讯有限公司 一种p波段宽带隔离滤波组件

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EP0852409A2 (fr) * 1997-01-07 1998-07-08 Murata Manufacturing Co., Ltd. Antenne et dispositif d'émission et de réception utilisant une telle antenne
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EP0700112A1 (fr) * 1994-08-30 1996-03-06 Murata Manufacturing Co., Ltd. Circuit intégré à hautes fréquences
EP0852409A2 (fr) * 1997-01-07 1998-07-08 Murata Manufacturing Co., Ltd. Antenne et dispositif d'émission et de réception utilisant une telle antenne
EP0926760B1 (fr) * 1997-12-25 2003-10-01 Murata Manufacturing Co., Ltd. Composant électronique à guide d'ondes non-radiative et circuit intégré l'utilisant
KR20080018952A (ko) * 2005-06-17 2008-02-28 시티에스 코포레이션 피코셀 및 마이크로셀 기지국 송수신기를 위한 ｒｆ 선단모듈
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CN102623779A (zh) * 2012-04-18 2012-08-01 华为技术有限公司 一种集成的环形器

Also Published As

Publication number Publication date
CN102754275A (zh) 2012-10-24
KR101136519B1 (ko) 2012-04-17
KR20110101621A (ko) 2011-09-16
CN102754275B (zh) 2015-04-22

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