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WO2011158995A1 - Procédé de fabrication d'un fto à structure double film - Google Patents

Procédé de fabrication d'un fto à structure double film Download PDF

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Publication number
WO2011158995A1
WO2011158995A1 PCT/KR2010/006305 KR2010006305W WO2011158995A1 WO 2011158995 A1 WO2011158995 A1 WO 2011158995A1 KR 2010006305 W KR2010006305 W KR 2010006305W WO 2011158995 A1 WO2011158995 A1 WO 2011158995A1
Authority
WO
WIPO (PCT)
Prior art keywords
fto
film
double
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/006305
Other languages
English (en)
Korean (ko)
Inventor
송철규
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SOLARCERAMIC CO Ltd
Original Assignee
SOLARCERAMIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SOLARCERAMIC CO Ltd filed Critical SOLARCERAMIC CO Ltd
Publication of WO2011158995A1 publication Critical patent/WO2011158995A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • plate-type FTO is made by atmospheric pressure CVD and spray pyrosol, and according to a conventional polycrystalline film growth mechanism, the growth of nanonuclei on the substrate of the first nanoparticles is gradually grown into micro grain crystals.
  • the nanorod-type FTO film also has a state of being grown vertically on the substrate in a columnar shape based on the nanoparticle-type nuclei.
  • the plate-like FTO shows the same interface structure but has high durability against high electroconductivity and physical external pressure due to the dense polycrystalline micrograins grown thereon.
  • FIG. 10 is a conceptual view of a thin film silicon solar cell having a double layered FTO film.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

Cette invention concerne un procédé de fabrication d'un FTO (oxyde d'étain dopé au fluor) à structure double film consistant : à chauffer un substrat entre 400 et 500 ; à produire un FTO par pulvérisation sur le substrat chauffé d'un précurseur contenant de l'étain ; à chauffer le film FTO plat à une température d'au moins 500-550° ; et à former une couche FTO à nanotiges. Cette invention se distingue en ce qu'un film FTO poly-cristallin est formé dans la partie inférieure et qu'une couche FTO à nanotiges est formée par croissance sur le film FTO poly-cristallin.
PCT/KR2010/006305 2010-06-14 2010-09-15 Procédé de fabrication d'un fto à structure double film Ceased WO2011158995A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100055913A KR101135792B1 (ko) 2010-06-14 2010-06-14 이중막 구조의 ｆｔｏ제조방법
KR10-2010-0055913 2010-06-14

Publications (1)

Publication Number Publication Date
WO2011158995A1 true WO2011158995A1 (fr) 2011-12-22

Family

ID=45348369

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006305 Ceased WO2011158995A1 (fr) 2010-06-14 2010-09-15 Procédé de fabrication d'un fto à structure double film

Country Status (2)

Country Link
KR (1) KR101135792B1 (fr)
WO (1) WO2011158995A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101855950B1 (ko) * 2016-05-30 2018-06-25 숙명여자대학교산학협력단 금속 촉매의 형상 제어를 통한 나노와이어 형성 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101537945B1 (ko) * 2013-12-30 2015-07-20 한국세라믹기술원 복합 가스센싱 소자 및 그 제조방법
KR101643132B1 (ko) * 2014-10-31 2016-07-28 충남대학교산학협력단 탄소 기판을 이용한 태양 전지 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060096633A1 (en) * 2004-11-05 2006-05-11 Industrial Technology Research Institute Magnetic field enhanced photovoltaic device
US20060270074A1 (en) * 2005-05-24 2006-11-30 Kim Jong W Light emitting device having nano structures for light extraction
KR20100006991A (ko) * 2008-07-11 2010-01-22 한국세라믹기술원 나노로드 층을 구비한 ｆｔｏ 투명 전도막

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060096633A1 (en) * 2004-11-05 2006-05-11 Industrial Technology Research Institute Magnetic field enhanced photovoltaic device
US20060270074A1 (en) * 2005-05-24 2006-11-30 Kim Jong W Light emitting device having nano structures for light extraction
KR20100006991A (ko) * 2008-07-11 2010-01-22 한국세라믹기술원 나노로드 층을 구비한 ｆｔｏ 투명 전도막

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101855950B1 (ko) * 2016-05-30 2018-06-25 숙명여자대학교산학협력단 금속 촉매의 형상 제어를 통한 나노와이어 형성 방법

Also Published As

Publication number Publication date
KR101135792B1 (ko) 2012-08-24
KR20110136114A (ko) 2011-12-21

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