[go: up one dir, main page]

WO2011023894A3 - Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire - Google Patents

Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire Download PDF

Info

Publication number
WO2011023894A3
WO2011023894A3 PCT/FR2010/051756 FR2010051756W WO2011023894A3 WO 2011023894 A3 WO2011023894 A3 WO 2011023894A3 FR 2010051756 W FR2010051756 W FR 2010051756W WO 2011023894 A3 WO2011023894 A3 WO 2011023894A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon substrate
textured
texturing
solar cell
produce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2010/051756
Other languages
English (en)
Other versions
WO2011023894A2 (fr
Inventor
Pere Roca I Cabarrocas
Mario Moreno
Dimitri Daineka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Original Assignee
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to ES10762743T priority Critical patent/ES2716503T3/es
Priority to MX2012002246A priority patent/MX2012002246A/es
Priority to JP2012526101A priority patent/JP5661771B2/ja
Priority to EP10762743.2A priority patent/EP2471103B1/fr
Priority to US13/391,884 priority patent/US8592949B2/en
Priority to CN201080047840.3A priority patent/CN102625955B/zh
Priority to KR1020127004972A priority patent/KR101668729B1/ko
Priority to AU2010288393A priority patent/AU2010288393B2/en
Application filed by Centre National de la Recherche Scientifique CNRS, Ecole Polytechnique filed Critical Centre National de la Recherche Scientifique CNRS
Priority to BR112012004116A priority patent/BR112012004116A2/pt
Priority to PH1/2012/500397A priority patent/PH12012500397A1/en
Publication of WO2011023894A2 publication Critical patent/WO2011023894A2/fr
Priority to ZA2012/01410A priority patent/ZA201201410B/en
Anticipated expiration legal-status Critical
Publication of WO2011023894A3 publication Critical patent/WO2011023894A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de texturation de la surface d'un substrat de silicium en phase gazeuse et un substrat de silicium texturé pour cellule solaire. Le procédé comprend au moins une étape a) d'exposition de ladite surface à un plasma radiofréquence de SF6/O2 pendant une durée comprise entre 2 min et 30 min, pour produire un substrat de silicium ayant une surface texturée présentant des structures pyramidales, le rapport SF6/O2 étant compris entre 2 et 10. Selon l'invention, lors de l'étape a), la densité de puissance générée avec le plasma radiofréquence est supérieure ou égale à 2500 m W/cm2, et la pression de SF6/O2 dansla chambre de réaction est inférieure ou égale à 100 m Torr, de façon à produire unsubstrat de silicium ayant une surface texturée présentant des structures pyramidales de type inversé.
PCT/FR2010/051756 2009-08-24 2010-08-23 Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire Ceased WO2011023894A2 (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
KR1020127004972A KR101668729B1 (ko) 2009-08-24 2010-08-23 실리콘 기판의 표면을 텍스처링하는 방법 및 태양 전지용 텍스처화된 실리콘 기판
JP2012526101A JP5661771B2 (ja) 2009-08-24 2010-08-23 シリコン基板の表面のテクスチャリング方法および太陽電池用のテクスチャード加工シリコン基板
EP10762743.2A EP2471103B1 (fr) 2009-08-24 2010-08-23 Procédé de texturation de la surface d'un substrat de silicium et substrat de silicium texturé pour cellule solaire
US13/391,884 US8592949B2 (en) 2009-08-24 2010-08-23 Method of texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
CN201080047840.3A CN102625955B (zh) 2009-08-24 2010-08-23 纹理化硅衬底表面的方法和用于太阳能电池的纹理化的硅衬底
AU2010288393A AU2010288393B2 (en) 2009-08-24 2010-08-23 Method for texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
BR112012004116A BR112012004116A2 (pt) 2009-08-24 2010-08-23 "processo de texturização da superfície de um substrato de silício em fase gasosa e substrato de silício texturizado para célula solar."
ES10762743T ES2716503T3 (es) 2009-08-24 2010-08-23 Procedimiento de texturización de la superficie de un sustrato de silicio y sustrato de silicio texturizado para célula solar
MX2012002246A MX2012002246A (es) 2009-08-24 2010-08-23 Metodo para texturizar la superficie de un sustrato de silicio y sustrato de silicio texturizado para una celda solar.
PH1/2012/500397A PH12012500397A1 (en) 2009-08-24 2010-08-23 Method for texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
ZA2012/01410A ZA201201410B (en) 2009-08-24 2012-02-24 Method for texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0955767 2009-08-24
FR0955767A FR2949276B1 (fr) 2009-08-24 2009-08-24 Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire

Publications (2)

Publication Number Publication Date
WO2011023894A2 WO2011023894A2 (fr) 2011-03-03
WO2011023894A3 true WO2011023894A3 (fr) 2012-05-03

Family

ID=42110315

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2010/051756 Ceased WO2011023894A2 (fr) 2009-08-24 2010-08-23 Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire

Country Status (14)

Country Link
US (1) US8592949B2 (fr)
EP (1) EP2471103B1 (fr)
JP (1) JP5661771B2 (fr)
KR (1) KR101668729B1 (fr)
CN (1) CN102625955B (fr)
AU (1) AU2010288393B2 (fr)
BR (1) BR112012004116A2 (fr)
ES (1) ES2716503T3 (fr)
FR (1) FR2949276B1 (fr)
MX (1) MX2012002246A (fr)
MY (1) MY153996A (fr)
PH (1) PH12012500397A1 (fr)
WO (1) WO2011023894A2 (fr)
ZA (1) ZA201201410B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009005168A1 (de) * 2009-01-14 2010-07-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zur Herstellung einer Solarzelle aus einem Siliziumsubstrat
JP5297543B2 (ja) * 2011-03-30 2013-09-25 パナソニック株式会社 テクスチャ形成面を有するシリコン基板、およびその製造方法
FR2984769B1 (fr) 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
US20140004648A1 (en) * 2012-06-28 2014-01-02 International Business Machines Corporation Transparent conductive electrode for three dimensional photovoltaic device
JP5858889B2 (ja) * 2012-09-24 2016-02-10 三菱電機株式会社 太陽電池用基板、その製造方法、太陽電池及びその製造方法
WO2014064929A1 (fr) * 2012-10-23 2014-05-01 三洋電機株式会社 Cellule solaire
JP6074560B2 (ja) * 2014-03-21 2017-02-08 ナルックス株式会社 光学素子の製造方法及び光学素子用成型型の製造方法
EP2933843A1 (fr) 2014-04-17 2015-10-21 Total Marketing Services Cellule solaire et procédé de fabrication d'une telle cellule solaire
DE102014110608B4 (de) 2014-07-28 2020-10-08 Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung Verfahren zur Anschlussprozessierung einer Siliziumschicht
EP3038164B1 (fr) 2014-12-22 2018-12-12 Total S.A. Dispositif optoélectronique avec une surface texturée et son procédé de fabrication
EP3550611A1 (fr) 2018-04-06 2019-10-09 Total Solar International Procédé de fabrication d'un dispositif photovoltaïque
EP3579285A1 (fr) 2018-06-08 2019-12-11 Total SA Procédé pour obtenir un dispositif photovoltaïque
EP3579284A1 (fr) 2018-06-08 2019-12-11 Total SA Procédé pour obtenir un dispositif photovoltaïque
EP3648174A1 (fr) 2018-10-31 2020-05-06 Total SA Ensemble photovoltaïque
CN118116986B (zh) * 2024-02-07 2025-08-12 隆基绿能科技股份有限公司 一种太阳能电池和光伏组件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164555A (ja) * 2000-11-27 2002-06-07 Kyocera Corp 太陽電池およびその形成方法
JP2003273382A (ja) 2002-03-12 2003-09-26 Kyocera Corp 太陽電池素子
FR2865420B1 (fr) * 2004-01-28 2007-09-14 Saint Gobain Procede de nettoyage d'un substrat
JP2005303255A (ja) 2004-03-17 2005-10-27 Shinryo Corp 太陽電池用シリコン基板の低反射率加工方法
KR100789987B1 (ko) * 2005-05-24 2008-01-02 성균관대학교산학협력단 실리콘 건식식각을 이용한 웨이퍼 표면의 나노 피라미드 구조 형성방법 및 이 구조를 이용한 게이트 메모리
JP4587988B2 (ja) * 2006-06-13 2010-11-24 京セラ株式会社 太陽電池素子の製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
LEE W J ET AL: "High-density hollow cathode plasma etching for large area multicrystalline silicon solar cells", CONFERENCE RECORD OF THE 29TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 20020519; 20020519 - 20020524 NEW YORK, NY : IEEE, US LNKD- DOI:10.1109/PVSC.2002.1190517, vol. CONF. 29, 19 May 2002 (2002-05-19), pages 296 - 299, XP010666287, ISBN: 978-0-7803-7471-3 *
YOO J ET AL: "Black surface structures for crystalline silicon solar cells", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH LNKD- DOI:10.1016/J.MSEB.2008.10.019, vol. 159-160, 15 March 2009 (2009-03-15), pages 333 - 337, XP026109149, ISSN: 0921-5107, [retrieved on 20090315] *
YOO J ET AL: "RIE texturing optimization for thin c-Si solar cells in SF6/O2 plasma", JOURNAL OF PHYSICS D. APPLIED PHYSICS, IOP PUBLISHING, BRISTOL, GB, vol. 41, no. 12, 21 June 2008 (2008-06-21), pages 125205, XP020133363, ISSN: 0022-3727 *

Also Published As

Publication number Publication date
ZA201201410B (en) 2012-10-31
JP5661771B2 (ja) 2015-01-28
FR2949276A1 (fr) 2011-02-25
FR2949276B1 (fr) 2012-04-06
KR20120051047A (ko) 2012-05-21
KR101668729B1 (ko) 2016-10-24
WO2011023894A2 (fr) 2011-03-03
US8592949B2 (en) 2013-11-26
CN102625955B (zh) 2015-11-25
US20120146194A1 (en) 2012-06-14
EP2471103B1 (fr) 2019-01-02
AU2010288393B2 (en) 2014-09-18
BR112012004116A2 (pt) 2016-03-15
MY153996A (en) 2015-04-30
MX2012002246A (es) 2012-12-17
JP2013502737A (ja) 2013-01-24
PH12012500397A1 (en) 2012-10-22
ES2716503T3 (es) 2019-06-12
CN102625955A (zh) 2012-08-01
EP2471103A2 (fr) 2012-07-04
AU2010288393A1 (en) 2012-03-15

Similar Documents

Publication Publication Date Title
WO2011023894A3 (fr) Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire
Yoo et al. Large-area multicrystalline silicon solar cell fabrication using reactive ion etching (RIE)
WO2010068677A3 (fr) Éléments de toiture photovoltaïques, systèmes, procédés et kits de toiture photovoltaïques
WO2012125656A3 (fr) Procédés de gravure de films en sin
MY152748A (en) Edge deletion of thin-layer solar modules by etching
WO2008143885A3 (fr) Couche de protection utilisee dans la fabrication d'une cellule solaire
WO2010120411A3 (fr) Dépôt par plasma pulsé pour former une couche de silicium microcristalline pour applications solaires
TW200717649A (en) Process to open carbon based hardmask
WO2012028728A3 (fr) Procédé de gravure en retrait par voie humide d'un émetteur de cellule solaire
TW200715398A (en) Resist removing method and resist removing apparatus
WO2011061011A3 (fr) Grilles d'électrode perforées pour cellules photovoltaïques à dimensions caractéristiques infra-longueur d'onde et supra-longueur d'onde
WO2013124394A3 (fr) Procédé de fabrication d'une cellule solaire
MY147667A (en) Selective etching of silicon dioxide compositions
CN103000763B (zh) 一种晶体硅太阳能电池的绒面结构及其制备方法
MX2012002240A (es) Metodo para limpiar la superficie de un sustrato de silicio.
Dekkers et al. Requirements of PECVD SiNx: H layers for bulk passivation of mc-Si
WO2011067338A3 (fr) Cellule solaire, module solaire et procédé de fabrication associé
TW200603291A (en) Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method
CN101235492A (zh) 使得非晶硅电池变得更稳定的化学退火办法
WO2008043827A3 (fr) Procédé de passivation de cellules solaires
WO2014026001A3 (fr) Dispositifs de génération de microplasma, et systèmes et procédés associés
WO2008136260A1 (fr) Procédé de formation d'un film de ti
Xiao et al. Plasma-aided fabrication in Si-based photovoltaic applications: an overview
EP2579301A4 (fr) Appareil et procédé de production d'un film de nitrure de silicium
PH12014502089A1 (en) Gaseous ozone (o3) treatment for solar cell fabrication

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080047840.3

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10762743

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: MX/A/2012/002246

Country of ref document: MX

WWE Wipo information: entry into national phase

Ref document number: 13391884

Country of ref document: US

Ref document number: 2012526101

Country of ref document: JP

ENP Entry into the national phase

Ref document number: 20127004972

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2010288393

Country of ref document: AU

Ref document number: 1201000763

Country of ref document: TH

Ref document number: 2010762743

Country of ref document: EP

Ref document number: 12012500397

Country of ref document: PH

ENP Entry into the national phase

Ref document number: 2010288393

Country of ref document: AU

Date of ref document: 20100823

Kind code of ref document: A

REG Reference to national code

Ref country code: BR

Ref legal event code: B01A

Ref document number: 112012004116

Country of ref document: BR

ENP Entry into the national phase

Ref document number: 112012004116

Country of ref document: BR

Kind code of ref document: A2

Effective date: 20120224