[go: up one dir, main page]

WO2008136260A1 - Procédé de formation d'un film de ti - Google Patents

Procédé de formation d'un film de ti Download PDF

Info

Publication number
WO2008136260A1
WO2008136260A1 PCT/JP2008/057315 JP2008057315W WO2008136260A1 WO 2008136260 A1 WO2008136260 A1 WO 2008136260A1 JP 2008057315 W JP2008057315 W JP 2008057315W WO 2008136260 A1 WO2008136260 A1 WO 2008136260A1
Authority
WO
WIPO (PCT)
Prior art keywords
treated
substrate
gas
formation method
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057315
Other languages
English (en)
Japanese (ja)
Inventor
Kensaku Narushima
Satoshi Wakabayashi
Tetsu Zenko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020097022392A priority Critical patent/KR101302819B1/ko
Publication of WO2008136260A1 publication Critical patent/WO2008136260A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un procédé de formation d'un film de Ti, le procédé comprenant : une étape de mise en place sur une table d'un substrat devant être traité et ayant une partie de Si ; une étape de chauffage du substrat devant être traité ; une étape de réglage d'une pression dans une chambre à une valeur prédéterminée ; une étape d'introduction d'un gaz de traitement contenant un gaz TiCl4 et un gaz de réduction ; une étape de formation d'un champ haute fréquence par des moyens de formation haute fréquence de façon à amener le gaz de traitement dans un état de plasma ; et une étape consistant à provoquer une réaction par le gaz Ticl4 et le gaz de réduction sur la surface du substrat devant être traité. Lorsque la réduction est utilisée pour former le film de Ti sur la partie de Si du substrat devant être traité, la pression dans la chambre et la puissance haute fréquence devant être appliquées sont contrôlées de façon à supprimer la génération de TiSi au niveau de la partie de Si du substrat devant être traité.
PCT/JP2008/057315 2007-04-27 2008-04-15 Procédé de formation d'un film de ti Ceased WO2008136260A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020097022392A KR101302819B1 (ko) 2007-04-27 2008-04-15 Ｔｉ막의 성막 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-118301 2007-04-27
JP2007118301A JP5193494B2 (ja) 2007-04-27 2007-04-27 Ｔｉ膜の成膜方法および記憶媒体

Publications (1)

Publication Number Publication Date
WO2008136260A1 true WO2008136260A1 (fr) 2008-11-13

Family

ID=39943377

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057315 Ceased WO2008136260A1 (fr) 2007-04-27 2008-04-15 Procédé de formation d'un film de ti

Country Status (5)

Country Link
JP (1) JP5193494B2 (fr)
KR (1) KR101302819B1 (fr)
CN (1) CN101668878A (fr)
TW (1) TWI425113B (fr)
WO (1) WO2008136260A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102245802A (zh) * 2008-12-12 2011-11-16 东京毅力科创株式会社 成膜方法、成膜装置和存储介质

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010180434A (ja) * 2009-02-03 2010-08-19 Tokyo Electron Ltd 成膜方法及びプラズマ成膜装置
JP6796431B2 (ja) * 2016-08-12 2020-12-09 東京エレクトロン株式会社 成膜装置、およびそれに用いるガス吐出部材
CN116411264A (zh) * 2021-12-31 2023-07-11 中芯国际集成电路制造(上海)有限公司 半导体工艺设备及其使用方法
KR20230174172A (ko) 2022-06-20 2023-12-27 시바우라 메카트로닉스 가부시끼가이샤 성막 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167692A (ja) * 1997-08-12 1999-03-09 Nippon Steel Corp 半導体装置の製造方法
JP2006225763A (ja) * 2001-12-25 2006-08-31 Tokyo Electron Ltd 受け渡し機構及び処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204457A (ja) * 1998-01-09 1999-07-30 Tokyo Electron Ltd ＣＶＤ−Ｔｉ膜の成膜方法
JP4319269B2 (ja) * 1998-07-31 2009-08-26 キヤノンアネルバ株式会社 プラズマｃｖｄによる薄膜形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167692A (ja) * 1997-08-12 1999-03-09 Nippon Steel Corp 半導体装置の製造方法
JP2006225763A (ja) * 2001-12-25 2006-08-31 Tokyo Electron Ltd 受け渡し機構及び処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102245802A (zh) * 2008-12-12 2011-11-16 东京毅力科创株式会社 成膜方法、成膜装置和存储介质

Also Published As

Publication number Publication date
TWI425113B (zh) 2014-02-01
KR20100015932A (ko) 2010-02-12
CN101668878A (zh) 2010-03-10
KR101302819B1 (ko) 2013-09-02
JP5193494B2 (ja) 2013-05-08
TW200907101A (en) 2009-02-16
JP2008274343A (ja) 2008-11-13

Similar Documents

Publication Publication Date Title
WO2008123431A1 (fr) Procédé d'oxydation au plasma, appareil de traitement au plasma et support d'enregistrement
WO2010045538A3 (fr) Procédés et appareil de commande de chaleur rapidement réactifs dans des dispositifs de traitement par plasma
WO2008149643A1 (fr) Dispositif et procédé de dopage par plasma
WO2013062831A3 (fr) Chambre de traitement pour gravure de films diélectriques à faible coefficient k et autres
TW200643996A (en) Method of film formation, film formation apparatus, permanent magnet, and process for producing permanent magnet
WO2009089245A3 (fr) Ensemble de tête de douche chauffée
WO2006009881A3 (fr) Procede et appareil de formation de nanoparticules a l'aide de plasmas a haute frequence
WO2007117797A3 (fr) Procédé de formation d'un film de carbure métallique ou de carbonitrure métallique à adhérence améliorée
WO2008136260A1 (fr) Procédé de formation d'un film de ti
SG136030A1 (en) Method for manufacturing compound material wafers and method for recycling a used donor substrate
WO2006038990A3 (fr) Procede de traitement de substrat
JP2010161350A5 (ja) 半導体装置の製造方法及び基板処理装置
MY155509A (en) Plasma temperature control apparatus and plasma temperature control method
MX2010011611A (es) Metodo de recubrimiento de zinc por difusion.
WO2009051654A3 (fr) Traitement plasma ambiant de composants d'imprimante
WO2011077327A3 (fr) Procédé de production de monoxyde d'azote
WO2011023894A3 (fr) Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire
WO2009122113A3 (fr) Procede de production de nanostructures sur un substrat d'oxyde metallique, et dispositif forme de couches minces
WO2004025710A3 (fr) Procede servant a rechauffer un substrat dans une operation a temperature variable au moyen d'un mandrin a temperature fixe
JP2008300687A5 (fr)
WO2005104186A3 (fr) Procede et systeme de traitement pour le nettoyage ameliore par plasma des elements d'un systeme
TW200520089A (en) Etch with ramping
TW200746292A (en) Plasma etching method, and computer-readable recording medium
WO2005067634A3 (fr) Traitement de piece a pression multiple perfectionne
WO2009008474A1 (fr) Procédé de traitement par plasma et appareil de traitement par plasma

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880013920.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08740401

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20097022392

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08740401

Country of ref document: EP

Kind code of ref document: A1