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WO2011091967A3 - Photovoltaische mehrfach-dünnschichtsolarzelle - Google Patents

Photovoltaische mehrfach-dünnschichtsolarzelle Download PDF

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Publication number
WO2011091967A3
WO2011091967A3 PCT/EP2011/000245 EP2011000245W WO2011091967A3 WO 2011091967 A3 WO2011091967 A3 WO 2011091967A3 EP 2011000245 W EP2011000245 W EP 2011000245W WO 2011091967 A3 WO2011091967 A3 WO 2011091967A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
cell
film solar
solar cell
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/000245
Other languages
English (en)
French (fr)
Other versions
WO2011091967A2 (de
Inventor
Clemens Feser
Jürgen LACOMBE
Karsten Von Maydell
Carsten Agert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ewe-Forschungszentrum fur Energietechnologie E V
EWE FORSCHUNGSZENTRUM fur ENERGIETECHNOLOGIE EV
Original Assignee
Ewe-Forschungszentrum fur Energietechnologie E V
EWE FORSCHUNGSZENTRUM fur ENERGIETECHNOLOGIE EV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ewe-Forschungszentrum fur Energietechnologie E V, EWE FORSCHUNGSZENTRUM fur ENERGIETECHNOLOGIE EV filed Critical Ewe-Forschungszentrum fur Energietechnologie E V
Publication of WO2011091967A2 publication Critical patent/WO2011091967A2/de
Publication of WO2011091967A3 publication Critical patent/WO2011091967A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1648—Polycrystalline semiconductors including only Group IV materials including microcrystalline Group IV-IV materials, e.g. microcrystalline SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft eine photovoltaische Mehrfach-Dünnschichtsolarzelle, umfassend ein Trägersubstrat (1) sowie zumindest eine obere und eine untere Teilzelle, die jeweils als pin-Struktur, welche eine p-leitende Schicht (p-Schicht), eine n-leitende Schicht (n-Schicht) und eine zwischen p- und n-Schicht angeordnete intrinsische Schicht (i-Schicht) umfasst, ausgebildet sind, wobei ausgehend von einer für den Lichteinfall ausgebildeten Vorderseite der Dünnschichtsolarzelle, auf dem Trägersubstrat und/oder auf einer oder mehreren weiteren Schichten, zunächst die obere Teilzelle (3) angeordnet ist, bei der die i-Schicht aus hydrogenisiertem amorphem Silizium ausgebildet ist und weiterhin unterhalb der oberen Teilzelle, gegebenenfalls auf einer oder mehreren weiteren Zwischenschichten, die untere Teilzelle (5) angeordnet ist und wobei bei jeder Teilzelle jeweils die p-leitende Schicht auf der der Vorderseite zugewandten Seite angeordnet ist. Wesentlich ist, dass bei der unteren Teilzelle die i-Schicht aus mikrokristallinem Germanium ausgebildet ist.
PCT/EP2011/000245 2010-01-29 2011-01-21 Photovoltaische mehrfach-dünnschichtsolarzelle Ceased WO2011091967A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010006314A DE102010006314A1 (de) 2010-01-29 2010-01-29 Photovoltaische Mehrfach-Dünnschichtsolarzelle
DE102010006314.2 2010-01-29

Publications (2)

Publication Number Publication Date
WO2011091967A2 WO2011091967A2 (de) 2011-08-04
WO2011091967A3 true WO2011091967A3 (de) 2011-12-22

Family

ID=44315967

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/000245 Ceased WO2011091967A2 (de) 2010-01-29 2011-01-21 Photovoltaische mehrfach-dünnschichtsolarzelle

Country Status (2)

Country Link
DE (1) DE102010006314A1 (de)
WO (1) WO2011091967A2 (de)

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DE102011115340A1 (de) * 2011-10-07 2013-04-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement im Mehrschichtaufbau und hieraus gebildetes Modul
JP2016529473A (ja) 2013-06-13 2016-09-23 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 少なくとも１つの物体を光学的に検出する検出器
US10353049B2 (en) 2013-06-13 2019-07-16 Basf Se Detector for optically detecting an orientation of at least one object
CN103625920B (zh) * 2013-11-22 2016-06-22 中国科学院深圳先进技术研究院 工件自动输送及组装生产系统及生产方法
EP3167304A4 (de) 2014-07-08 2018-02-21 Basf Se Detektor zur bestimmung der position mindestens eines objekts
WO2016092451A1 (en) 2014-12-09 2016-06-16 Basf Se Optical detector
US10775505B2 (en) 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object
EP3325917B1 (de) 2015-07-17 2020-02-26 trinamiX GmbH Detektor zur optischen detektion von mindestens einem objekt
US10412283B2 (en) 2015-09-14 2019-09-10 Trinamix Gmbh Dual aperture 3D camera and method using differing aperture areas
CN109564952A (zh) 2016-04-06 2019-04-02 特里纳米克斯股份有限公司 用于至少一个对象的光学检测的检测器
US11211513B2 (en) 2016-07-29 2021-12-28 Trinamix Gmbh Optical sensor and detector for an optical detection
EP3532796A1 (de) 2016-10-25 2019-09-04 trinamiX GmbH Optischer infrarotdetektor mit integriertem filter
US11428787B2 (en) 2016-10-25 2022-08-30 Trinamix Gmbh Detector for an optical detection of at least one object
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object
EP4239371A3 (de) 2016-11-17 2023-11-08 trinamiX GmbH Detektor zur optischen erfassung mindestens eines objekts
WO2018115073A1 (en) 2016-12-21 2018-06-28 Trinamix Gmbh Detector for an optical detection
CN119958702A (zh) 2017-04-20 2025-05-09 特里纳米克斯股份有限公司 光学检测器
CN110998223B (zh) 2017-06-26 2021-10-29 特里纳米克斯股份有限公司 用于确定至少一个对像的位置的检测器

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WO2009078153A1 (ja) * 2007-12-19 2009-06-25 Tokyo Electron Limited 光電変換素子製造装置及び方法、並びに光電変換素子
US20090293954A1 (en) * 2008-05-30 2009-12-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric Conversion Device And Method For Manufacturing The Same

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JP2695585B2 (ja) * 1992-12-28 1997-12-24 キヤノン株式会社 光起電力素子及びその製造方法、並びにそれを用いた発電装置
JP2006310348A (ja) * 2005-04-26 2006-11-09 Sanyo Electric Co Ltd 積層型光起電力装置
DE102007033444A1 (de) 2007-07-18 2009-01-29 Schott Solar Gmbh Silizium-Mehrfachsolarzelle und Verfahren zu deren Herstellung
JP2011129541A (ja) * 2008-03-07 2011-06-30 Tohoku Univ 太陽電池

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US20100275981A1 (en) * 2007-12-19 2010-11-04 Tokyo Electron Limited Apparatus and method for manufacturing photoelectric conversion elements, and photoelectric conversion element
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Also Published As

Publication number Publication date
DE102010006314A1 (de) 2011-08-04
WO2011091967A2 (de) 2011-08-04

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