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WO2009037814A1 - 光起電力素子およびその製造方法 - Google Patents

光起電力素子およびその製造方法 Download PDF

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Publication number
WO2009037814A1
WO2009037814A1 PCT/JP2008/002496 JP2008002496W WO2009037814A1 WO 2009037814 A1 WO2009037814 A1 WO 2009037814A1 JP 2008002496 W JP2008002496 W JP 2008002496W WO 2009037814 A1 WO2009037814 A1 WO 2009037814A1
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WO
WIPO (PCT)
Prior art keywords
thin films
layer
type
crystalline
amorphous thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002496
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English (en)
French (fr)
Inventor
Hiroshige Deguchi
Tsukasa Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of WO2009037814A1 publication Critical patent/WO2009037814A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

光起電力素子（１０）は、ｐ層（３）、ｉ層（４）、ｎ層（５）および電極（６）を透明導電膜（２）が形成された絶縁基板（１）上に順次積層した構造からなる。ｐ層（３）は、ｐ型ａ－Ｓｉ：Ｈからなり、ｎ層（５）は、ｎ型ａ－Ｓｉ：Ｈからなる。ｉ層（４）は、複数の非晶質薄膜（４１）と複数の結晶薄膜（４２）とからなる。そして、複数の非晶質薄膜（４１）および複数の結晶薄膜（４２）は、非晶質薄膜（４１）および結晶薄膜（４２）が相互に接するように絶縁基板（１）に略垂直な方向に積層される。非晶質薄膜（４１）は、ｉ型ａ－Ｓｉ：Ｈからなり、結晶薄膜（４２）は、ｉ型ｐｏｌｙ－Ｓｉからなる。そして、ｉ層（４）は、３００ｎｍ～１０００ｎｍの膜厚を有し、非晶質薄膜（４１）および結晶薄膜（４２）の各々は、１０ｎｍ～２０ｎｍの膜厚を有する。
PCT/JP2008/002496 2007-09-21 2008-09-10 光起電力素子およびその製造方法 Ceased WO2009037814A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-245287 2007-09-21
JP2007245287A JP2009076742A (ja) 2007-09-21 2007-09-21 光起電力素子およびその製造方法

Publications (1)

Publication Number Publication Date
WO2009037814A1 true WO2009037814A1 (ja) 2009-03-26

Family

ID=40467643

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002496 Ceased WO2009037814A1 (ja) 2007-09-21 2008-09-10 光起電力素子およびその製造方法

Country Status (2)

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JP (1) JP2009076742A (ja)
WO (1) WO2009037814A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101106480B1 (ko) * 2009-06-12 2012-01-20 한국철강 주식회사 광기전력 장치의 제조 방법
KR101100109B1 (ko) * 2009-06-12 2011-12-29 한국철강 주식회사 광기전력 장치의 제조 방법
US9105769B2 (en) 2013-09-12 2015-08-11 International Business Machines Corporation Shallow junction photovoltaic devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08172208A (ja) * 1994-12-16 1996-07-02 Crystal Device:Kk 超格子装置およびその製造方法
JPH10242493A (ja) * 1997-02-28 1998-09-11 Mitsubishi Heavy Ind Ltd 太陽電池
JP2002076027A (ja) * 2000-09-01 2002-03-15 Japan Science & Technology Corp 有機共蒸着膜の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08172208A (ja) * 1994-12-16 1996-07-02 Crystal Device:Kk 超格子装置およびその製造方法
JPH10242493A (ja) * 1997-02-28 1998-09-11 Mitsubishi Heavy Ind Ltd 太陽電池
JP2002076027A (ja) * 2000-09-01 2002-03-15 Japan Science & Technology Corp 有機共蒸着膜の製造方法

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JP2009076742A (ja) 2009-04-09

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