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WO2011055960A3 - Appareil et procédé de polissage et de lavage d'une plaquette de semi-conducteur - Google Patents

Appareil et procédé de polissage et de lavage d'une plaquette de semi-conducteur Download PDF

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Publication number
WO2011055960A3
WO2011055960A3 PCT/KR2010/007675 KR2010007675W WO2011055960A3 WO 2011055960 A3 WO2011055960 A3 WO 2011055960A3 KR 2010007675 W KR2010007675 W KR 2010007675W WO 2011055960 A3 WO2011055960 A3 WO 2011055960A3
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
washing
semiconductor wafer
module
transfer station
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/007675
Other languages
English (en)
Korean (ko)
Other versions
WO2011055960A2 (fr
Inventor
정인권
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to KR1020127013772A priority Critical patent/KR101684228B1/ko
Publication of WO2011055960A2 publication Critical patent/WO2011055960A2/fr
Publication of WO2011055960A3 publication Critical patent/WO2011055960A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un appareil de polissage comprenant au moins un module de polissage. Chaque module de polissage comprend : au moins une surface de polissage ; au moins une tête de polissage ; au moins une station de transfert de plaquette ; et un dispositif de transfert pour transférer ladite au moins une tête de polissage entre ladite au moins une surface de polissage et ladite au moins une station de transfert de plaquette. Le module de polissage peut comprendre des moyens d'étanchéité afin de protéger ladite au moins une surface de polissage contre des particules externes, ainsi que des dispositifs de pulvérisation de fluide. L'appareil de lavage peut comprendre deux chambres de séchage ou plus afin d'obtenir une productivité élevée.
PCT/KR2010/007675 2009-11-03 2010-11-02 Appareil et procédé de polissage et de lavage d'une plaquette de semi-conducteur Ceased WO2011055960A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020127013772A KR101684228B1 (ko) 2009-11-03 2010-11-02 반도체 웨이퍼를 연마하는 연마 장치

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
US28044109P 2009-11-03 2009-11-03
US61/280,441 2009-11-03
US28332409P 2009-12-02 2009-12-02
US61/283,324 2009-12-02
US28347909P 2009-12-04 2009-12-04
US61/283,479 2009-12-04
US28369409P 2009-12-08 2009-12-08
US61/283,694 2009-12-08
US28416009P 2009-12-14 2009-12-14
US61/284,160 2009-12-14
US28444809P 2009-12-21 2009-12-21
US61/284,448 2009-12-21
US39909610P 2010-07-06 2010-07-06
US61/399,096 2010-07-06
US12/912,738 US20110104997A1 (en) 2009-11-03 2010-10-26 Apparatuses and methods for polishing and cleaning semiconductor wafers
US12/912,738 2010-10-26

Publications (2)

Publication Number Publication Date
WO2011055960A2 WO2011055960A2 (fr) 2011-05-12
WO2011055960A3 true WO2011055960A3 (fr) 2011-11-03

Family

ID=43925928

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/007675 Ceased WO2011055960A2 (fr) 2009-11-03 2010-11-02 Appareil et procédé de polissage et de lavage d'une plaquette de semi-conducteur

Country Status (4)

Country Link
US (1) US20110104997A1 (fr)
KR (2) KR101684228B1 (fr)
TW (1) TW201124233A (fr)
WO (1) WO2011055960A2 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101581862B1 (ko) * 2014-04-28 2015-12-31 이성수 연마모듈 및 이를 구비한 연마장치
KR102177123B1 (ko) * 2014-08-28 2020-11-11 삼성전자주식회사 화학적 기계적 연마 장치
JP6093741B2 (ja) * 2014-10-21 2017-03-08 信越半導体株式会社 研磨装置及びウェーハの研磨方法
CN109037101B (zh) * 2018-07-13 2024-11-15 清华大学 晶圆加工设备
US20210323117A1 (en) * 2020-04-16 2021-10-21 Applied Materials, Inc. High throughput polishing modules and modular polishing systems
US20220111486A1 (en) * 2020-10-08 2022-04-14 Kctech Co., Ltd. Substrate processing system
US20220111485A1 (en) * 2020-10-08 2022-04-14 Kctech Co., Ltd. Substrate processing system
JP7536601B2 (ja) * 2020-11-04 2024-08-20 株式会社荏原製作所 研磨ヘッドおよび研磨装置
CN112405339B (zh) * 2020-12-05 2024-11-19 天津中环领先材料技术有限公司 一种硅片抛光用暂存放置系统
KR20220122360A (ko) * 2021-02-26 2022-09-02 주식회사 케이씨텍 기판 연마 시스템
KR102781684B1 (ko) * 2021-02-26 2025-03-18 주식회사 케이씨텍 기판 이송 시스템
KR102615758B1 (ko) * 2021-05-10 2023-12-19 세메스 주식회사 기판 처리 장치 및 방법
CN115338718B (zh) * 2022-10-18 2023-03-24 杭州众硅电子科技有限公司 一种晶圆抛光系统
KR102782427B1 (ko) * 2023-04-13 2025-03-14 사이언테크 코포레이션 반도체 공정의 웨이퍼 이송 장치 및 웨이퍼 이송 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030089508A (ko) * 2002-05-17 2003-11-21 가부시키가이샤 토쿄 세이미쯔 화학적 기계 연마 방법 및 화학적 기계 연마 장치
KR100759453B1 (ko) * 2006-06-20 2007-09-20 세크론 주식회사 웨이퍼 경화 방법
KR20070104870A (ko) * 2002-08-02 2007-10-29 어플라이드 머티어리얼스, 인코포레이티드 전기화학적 기계적 연마를 위한 전도성 연마 부품
KR20080002982A (ko) * 2005-04-21 2008-01-04 가부시키가이샤 에바라 세이사꾸쇼 웨이퍼 수수장치, 폴리싱장치 및 웨이퍼 수취방법
KR20080042867A (ko) * 2005-09-09 2008-05-15 이노플라 아엔씨 대상물 세정 장치들을 이용하여 대상물들을 연마하기 위한장치 및 방법
KR100902177B1 (ko) * 2008-02-19 2009-06-10 박용길 카로셀 회전식 화학기계 연마장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
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US5655954A (en) * 1994-11-29 1997-08-12 Toshiba Kikai Kabushiki Kaisha Polishing apparatus
US5816891A (en) * 1995-06-06 1998-10-06 Advanced Micro Devices, Inc. Performing chemical mechanical polishing of oxides and metals using sequential removal on multiple polish platens to increase equipment throughput
US7097544B1 (en) * 1995-10-27 2006-08-29 Applied Materials Inc. Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion
US5947802A (en) * 1997-11-05 1999-09-07 Aplex, Inc. Wafer shuttle system
JP3048142B2 (ja) * 1998-10-19 2000-06-05 株式会社東京精密 ウェーハ加工装置
WO2009126823A2 (fr) * 2008-04-09 2009-10-15 Applied Materials, Inc. Système de polissage ayant une piste

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030089508A (ko) * 2002-05-17 2003-11-21 가부시키가이샤 토쿄 세이미쯔 화학적 기계 연마 방법 및 화학적 기계 연마 장치
KR20070104870A (ko) * 2002-08-02 2007-10-29 어플라이드 머티어리얼스, 인코포레이티드 전기화학적 기계적 연마를 위한 전도성 연마 부품
KR20080002982A (ko) * 2005-04-21 2008-01-04 가부시키가이샤 에바라 세이사꾸쇼 웨이퍼 수수장치, 폴리싱장치 및 웨이퍼 수취방법
KR20080042867A (ko) * 2005-09-09 2008-05-15 이노플라 아엔씨 대상물 세정 장치들을 이용하여 대상물들을 연마하기 위한장치 및 방법
KR100759453B1 (ko) * 2006-06-20 2007-09-20 세크론 주식회사 웨이퍼 경화 방법
KR100902177B1 (ko) * 2008-02-19 2009-06-10 박용길 카로셀 회전식 화학기계 연마장치

Also Published As

Publication number Publication date
US20110104997A1 (en) 2011-05-05
KR20120099702A (ko) 2012-09-11
TW201124233A (en) 2011-07-16
KR101814360B1 (ko) 2018-01-04
WO2011055960A2 (fr) 2011-05-12
KR20160135117A (ko) 2016-11-24
KR101684228B1 (ko) 2016-12-12

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