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WO2011055960A2 - Appareil et procédé de polissage et de lavage d'une plaquette de semi-conducteur - Google Patents

Appareil et procédé de polissage et de lavage d'une plaquette de semi-conducteur Download PDF

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Publication number
WO2011055960A2
WO2011055960A2 PCT/KR2010/007675 KR2010007675W WO2011055960A2 WO 2011055960 A2 WO2011055960 A2 WO 2011055960A2 KR 2010007675 W KR2010007675 W KR 2010007675W WO 2011055960 A2 WO2011055960 A2 WO 2011055960A2
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WIPO (PCT)
Prior art keywords
polishing
wafer
cleaning
wafer transfer
head
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Ceased
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PCT/KR2010/007675
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English (en)
Korean (ko)
Other versions
WO2011055960A3 (fr
Inventor
정인권
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Individual
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Individual
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Priority to KR1020127013772A priority Critical patent/KR101684228B1/ko
Publication of WO2011055960A2 publication Critical patent/WO2011055960A2/fr
Publication of WO2011055960A3 publication Critical patent/WO2011055960A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber

Definitions

  • the present invention generally relates to semiconductor processing equipment and, more particularly, to apparatus and methods for polishing and cleaning semiconductor wafers.
  • a preferred method for wafer planarization is polishing, which is a method of polishing a wafer using an abrasive supplied between the wafer and the polishing pad.
  • the polished wafer is cleaned and dried using chemicals and deionized water before further processing in a device for lamination or photolithography of metal or insulating layers.
  • a processing apparatus for polishing a semiconductor wafer includes a polishing apparatus and a cleaning apparatus.
  • the polishing apparatus includes a plurality of polishing tables on which the polishing pads are placed and polishing heads for supporting and pressing the wafer on the polishing pads.
  • the cleaning apparatus includes a plurality of cleaning chambers for cleaning semiconductor wafers and a drying chamber for drying the cleaned wafers. Wafers polished in the polishing apparatus are cleaned through a plurality of cleaning chambers and dried in a drying chamber.
  • the processing apparatus may include two cleaning apparatuses for high productivity.
  • the placement of the polishing device and the cleaning devices becomes important in order to efficiently polish and clean a plurality of semiconductor wafers.
  • the process area taking up a large area requires a larger clean room, which means more operating expenses, so the area of the process unit must also be taken into account.
  • polishing and cleaning semiconductor wafers Another important performance factor of process equipment for polishing and cleaning semiconductor wafers is ease of maintenance. It is important to arrange the polishing and cleaning equipment within the process equipment so that engineers have enough space to access and maintain the polishing and cleaning equipment.
  • productivity One of the most important performance factors of the cleaning apparatus used in the processing apparatus for polishing and cleaning the semiconductor wafer is productivity. Since the productivity of the processing apparatus may be limited by the low productivity of the cleaning apparatus, the productivity of the cleaning apparatus should be improved for the high productivity of the processing apparatus.
  • polishing apparatus used in a processing apparatus for polishing and cleaning semiconductor wafers
  • productivity One of the most important performance factors of a polishing apparatus used in a processing apparatus for polishing and cleaning semiconductor wafers is productivity.
  • a polishing apparatus generally requires a larger number of polishing tables and polishing heads.
  • an efficient arrangement of polishing tables and polishing heads becomes important to design a polishing apparatus having a small area and providing efficient polishing of semiconductor wafers.
  • defect generation can be caused on the wafer by large foreign particles falling onto the polishing pads from the moving parts used to transfer the polishing heads between the polishing pads.
  • the polishing pads For low defect generation, the polishing pads must be protected from the foreign particles and for this the polishing apparatus needs an efficient design.
  • An abrasive polishing apparatus includes at least one polishing surface, at least one polishing head assembly including at least one polishing head, at least one polishing transfer station, the at least one polishing surface and the at least one polishing surface assembly. And a transfer device configured to transfer the at least one abrasive head assembly between one abrasive transfer station.
  • the transfer device comprises a support structure comprising an opening disposed on the at least one polishing surface and the at least one abrasive transfer station, at least one inner guide rail surrounded by the opening and supported by the support structure.
  • FIG. 1 is a plan view of a polishing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a plan view of a polishing module used in the polishing apparatus of FIG.
  • FIG. 3 is a side view of the polishing module of FIG. 2.
  • 4A and 4B are plan views of polishing apparatuses according to embodiments of the present invention.
  • FIG. 5 is a plan view of a processing apparatus according to an embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of the cleaning apparatus used in the process apparatus of FIG. 5.
  • FIG. 7 is a plan view of a processing apparatus according to an embodiment of the present invention.
  • 8 (a) and 8 (b) are plan views of the cleaning apparatus according to the embodiment of the present invention.
  • 9 and 10 are plan views of polishing apparatuses according to embodiments of the present invention.
  • FIG. 11-13 are plan views of processing apparatuses in accordance with embodiments of the present invention.
  • FIG. 14 is a plan view of a polishing apparatus according to an embodiment of the present invention.
  • 15 (a) and 15 (b) are side views of the pivoting wafer transfer device and cleaning device used in the polishing device of FIG.
  • 16 is a plan view of a processing apparatus according to an embodiment of the present invention.
  • 17 is a vertical sectional view of a rotating device according to an embodiment of the present invention.
  • FIG. 18 and 19 are plan views of the rotary device of FIG. 17 seen from cross sections 600L1 and 600L2 of the rotary device of FIG. 17, respectively.
  • FIG. 20 is a vertical sectional view of a rotating apparatus according to an embodiment of the present invention.
  • FIG. 21 is a plan view of the rotating device of FIG. 20 seen from section 600L3 of the rotating device of FIG. 20.
  • FIG. 22 is a cross-sectional view of the guide rail, the guide block and the air nozzles of the rotating device of FIG. 20 according to an embodiment of the present invention.
  • FIG. 23 is a plan view of the rotating device of FIG. 20 seen from section 600L4 of the rotating device of FIG. 20.
  • FIG. 24 is a three-dimensional cross-sectional side view of the rotating device of FIG. 20.
  • 25 is a plan view of a polishing apparatus according to an embodiment of the present invention.
  • 26 (a) -26 (h) are sequential plan views of the polishing apparatus of FIG. 25 for showing a wafer polishing sequence according to an embodiment of the present invention.
  • 27-29 are plan views of processing apparatuses in accordance with embodiments of the present invention.
  • FIG. 30 is a cross-sectional view of the cleaning apparatus according to the embodiment of the present invention.
  • 31 (a) -31 (u) are sequential plan views of the cleaning apparatus of FIG. 30 to illustrate a wafer processing method according to an embodiment of the present invention.
  • 32A and 32B are side views of a wafer output stage according to an embodiment of the present invention.
  • 33-35 are plan views of processing apparatuses in accordance with embodiments of the present invention.
  • the polishing apparatus 5 includes a first polishing module 10, a second polishing module 10 ′ and a wafer transfer device 40.
  • the polishing apparatus 5 may comprise an enclosure 11 to isolate the polishing modules 10 and 10 'from the surrounding environment.
  • the first polishing module 10 comprises three polishing heads 20a-20c, two polishing surfaces 14a and 14b, a polishing surface, and one wafer transfer station 18. Include.
  • the second polishing module 10 'includes three polishing heads 20a'-20c', two polishing surfaces 14a 'and 14b', and one wafer transfer station 18 '.
  • the wafer transfer device 40 supplies the wafers to be polished from the wafer source to the wafer transfer stations 18 and 18 'and transfers the polished wafers from the wafer transfer stations 18 and 18' to the wafer storage site.
  • the first and second polishing modules 10 and 10 ′ are installed in the polishing apparatus 5 such that they are substantially symmetrical with respect to the imaginary plane.
  • the polishing apparatus 5 only the components of the first polishing module 10 are described.
  • the components used in the second polishing module 10 ′ like the markings of the first polishing module 10 and the second polishing module 10 ′, indicate components used in the first polishing module 10 ′. This is indicated by appending a prime (') symbol to the reference number used.
  • polishing module 10 is further described.
  • 2 and 3 are plan and side views of the polishing module 10, respectively.
  • the polishing surfaces 14a and 14b of the first polishing module 10 are supported on the respective polishing tables 13a and 13b, table and on the respective rotary devices around the respective rotation axes 15a and 15b. Is rotated.
  • Polyurethane pads may be used as the polishing surfaces 14a and 14b of the polishing module 10.
  • the polishing surfaces 14a and 14b are provided in the polishing module 10 such that an imaginary surface A connecting the rotation axes 15a and 15b thereof is parallel to the depth direction of the polishing module 10 as shown in FIG. Is installed.
  • the first polishing head 20a is fastened to one end of the shaft 21a. Another end of the shaft 21a is fastened to a rotational and vertical drive mechanism 22a which controls the rotational and vertical movement of the first polishing head 20a.
  • the rotary and vertical drive device 22a is fastened to one end of the arm 24a. Another end of the arm 24a is fastened to a rotation mechanism 26.
  • the first polishing head 20a, the shaft 21a, and the rotational and vertical drive device 22a form a first polishing head assembly.
  • the second and third polishing heads 20a and 20b are respectively shafts 21b and 21c, respectively rotating and vertically driven.
  • the second polishing head 20b, the shaft 21b, and the rotary and vertical drive device 22b form a second polishing head assembly.
  • the third polishing head 20c, the shaft 21c, and the rotational and vertical drive device 22c form a third polishing head assembly.
  • the rotary device 26 is mounted on top of the polishing tables 13a and 13b, on top of the frame structure of the polishing device 5 (not shown in FIGS. 2 and 3).
  • the rotating device 26 has a polishing head 20a-20c about the axis of rotation 28 between the wafer transfer station 18 and the polishing surfaces 14a and 14b along a circular path 28a. Configured to rotate feed.
  • the rotating device 26 can be regarded as a transport mechanism configured to transport polishing head assemblies comprising polishing heads.
  • the circular path 28a is a trajectory in which the centers 23a-23c of the polishing heads 20a-20c move while rotating along the rotational axis 28 as shown in FIGS. 1 and 2.
  • the wafer transfer station 18 and the first and second polishing surfaces 14a and 14b are rotated axes of the respective first and second polishing surfaces 14a and 14b from the center 18c of the wafer transfer station 18. Angles about the axis of rotation 28 up to 15a and 15b are equal to each other and may be disposed around the axis of rotation 28 such that the angles have a value between 100 and 110 degrees. Any device capable of transferring the polishing heads 20a-20c and the wafer can be used as the wafer transfer station 18.
  • the polishing heads 20a-20c with the wafer are transferred by the rotating device 26 to the polishing surfaces 14a and 14b about the rotation axis 28, and the polishing surfaces 14a and 14b. Is pressed).
  • the polishing heads 20a-20c are rotated about the respective rotation axes 23a-23c, and the polishing surfaces 14a and 14b are also rotated about the respective rotation axes 15a and 15b.
  • An abrasive is supplied onto the polishing surfaces 14a and 14b during the polishing process.
  • the polishing surfaces 14a and 14b, the wafer transfer station 18 and the rotating shaft 28 have two polishing positions in which the polishing module 10 is on the first polishing surface 14a. It is arranged in the polishing module 10 to have P11 and P12 and to have two polishing positions P21 and P22 on the second polishing surface 14b. In order to polish the wafers mounted on the polishing heads 20a-20c on the first polishing surface 14a, each of the centers 23a-23c of the polishing heads 20a-20c is positioned at one of P11 or P12. do. In order to polish the wafers mounted on the polishing heads 20a-20c on the second polishing surface 14b, each of the centers 23a-23c of the polishing heads 20a-20c is positioned at one of P21 or P22. do.
  • the positions of P11, P12, P21 and P22 are further described using the circumference of the polishing heads 20a-20c and the polishing surfaces 14a and 14b.
  • the polishing heads 20a-20c are positioned on the first polishing surface 14a such that they have tangents such as the first polishing surface 14a at two points 14X and 14X *. Can be.
  • Point 14X is adjacent to wafer transfer station 18 and point 14X * is located opposite the point 14X.
  • the points 14X and 14X * are located on the circumference of the first polishing surface 14a.
  • Polishing heads 20a-20c may be located on second polishing surface 14b such that they have tangents such as second polishing surface 14b at two points 14Y and 14Y *.
  • Point 14Y is adjacent to wafer transfer station 18 and point 14Y * is located opposite point 14Y.
  • the points 14Y and 14Y * are located on the circumference of the second polishing surface 14b.
  • the center of the polishing head is located at polishing position P11 or P21 on the first polishing surface 14a, respectively.
  • the center of the polishing head is located at the polishing position P21 or P22 on the second polishing surface 14b, respectively.
  • positioning the centers 23a-23c of the polishing heads 20a-20c at the polishing position P11 means that the centers 23a-23c have a P11 on the circular path 28a.
  • Located in the range of 1 inch from the direction of P12 to P12, and positioning the centers 23a-23c of the polishing heads 20a-20c at the polishing position P12 means that the centers 23a-23c have a circular path ( Located within the range of 1 inch from P12 to P11 on 28a, positioning the centers 23a-23c of the polishing heads 20a-20c at the polishing position P21 means that the centers 23a-23c have a circular path.
  • positioning the centers 23a-23c of the polishing heads 20a-20c at the polishing position P22 means that the centers 23a-23c are circular. It can be located in the range of 1 inch from P22 to P21 on the path 28a.
  • the centers 23a-23c of the polishing heads 20a-20c are moved to respective polishing positions by the rotating device 26 about the rotation axis 28. It can oscillate 1 inch clockwise and 1 inch counterclockwise from (P11-P22).
  • each pad conditioning device 80 ie, the pad conditioning devices 80a-80b ′, includes a pivoting device 82, an arm 84 and a conditioning disk 86.
  • the pivoting device 82 rotates the conditioning disk 86 about the axis 81 between the center of the polishing surface 14 and the parking position 87.
  • Each abrasive supply arm 90 ie, each of the abrasive supply arms 90a-90b ′, includes a pivoting device 92 and an arm 94.
  • the pivoting device 92 rotates the arm 94 about the axis 91 to the center region of the polishing surface 14.
  • Polishing position on the polishing surfaces 14a-14b ' depending on the pad conditioning devices 80a-80b' and the relative positions of the polishing supply arms 90a-90b 'with respect to the polishing surfaces 14a-14b'. are determined.
  • the first polishing module 10 uses P11 and P22 as its polishing positions on the first and second polishing surfaces 14a and 14b, respectively.
  • the second polishing module 10 ' is configured to use P11' and P22 'as its polishing positions on the first and second polishing surfaces 14a' and 14b ', respectively.
  • 4 (a) shows a modified form of the polishing apparatus 5 according to the embodiment of the present invention, in which the first polishing module 10 is provided with the first and second polishing surfaces 14a and 14b) on the first and second polishing surfaces 14a 'and 14b', respectively, and the second polishing module 10 'is configured to use P12 and P21 as its polishing positions, respectively. It is configured to use P21 '.
  • FIG. 4 (b) shows a modified form of the polishing apparatus 5 according to another embodiment of the present invention, in which the first polishing module 10 has a first and second polishing surfaces ( Is configured to use P12 and P21 as its polishing positions on 14a and 14b, respectively, and second polishing module 10 'is P11 as its polishing positions on first and second polishing surfaces 14a' and 14b ', respectively. Is configured to use 'and P22'.
  • the processing apparatus 100 includes two wafer cleaning devices 120 and 120 ', a cleaning apparatus, a polishing apparatus 5, a factory interface 64, a wafer input stage 16a, two cleaner buffers. (16b and 16b ', cleaner buffer, the same as the cleaner interface stage on US preliminary patent applications to which the present application claims priority), and two wafer output stages (16c and 16c', output stage).
  • the first cleaner buffer 16b is located at the first end 120x of the first cleaner 120 adjacent to the polishing apparatus 5.
  • Respective second ends 120y and 120y 'of the first and second cleaning devices 120 and 120' are located adjacent to the factory interface 64.
  • the polishing apparatus 5 is arranged at the rear of the processing apparatus 100 such that the respective virtual surfaces A and A 'of the polishing modules 10 and 10' are parallel to the depth direction of the processing apparatus 100.
  • the wafer input terminal 16a and the wafer transfer device 40 are disposed in the space 120S.
  • Factory interface 64 includes a cassette 60 and a wafer transfer device 50.
  • Cassette 60 is a device for storing a wafer to be processed and a processed wafer.
  • the wafer transfer device 50 transfers the wafer from the cassette 60 to the wafer input end 16a and from the wafer output ends 16c and 16c 'of the cleaning devices 120 and 120' to the cassette 60.
  • Factory interface 64 may further include a straight track 52.
  • the wafer transfer device 50 is fastened to the straight track 52 so that it can move along the straight track 52.
  • the straight tracks 52 are arranged to be parallel to the width direction of the processing apparatus 100 as shown in FIG. 5.
  • the wafer input end 16a is a device in which a wafer to be transferred by the wafer transfer device 40 is placed by the wafer transfer device 50.
  • the wafer input end 16a may be fastened to the input end transfer device 77 so as to be movable between the wafer receiving position RP1 and the wafer discharge position RP2.
  • Wafer receiving position RP1 is adjacent to factory interface 64 such that wafer input end 16a can receive a wafer from wafer transfer device 50.
  • the wafer discharge position RP2 is adjacent to the wafer transfer device 40 so that the wafer input end 16a can discharge the wafer to the wafer transfer device 40.
  • Wafer transfer device 40 is located in a space surrounded by wafer transfer stations 18 and 18 ', cleaner buffers 16b and 16b', and wafer discharge position RP2.
  • the wafer transfer device 40 may be mounted on the straight track 42.
  • the straight track 42 allows the wafer transfer device 40 to move between the wafer input end 16a, the cleaner buffers 16b and 16b ', and the wafer transfer stations 18 and 18' of the polishing apparatus 5. So that it is designed and arranged.
  • Cleaning apparatuses 120 and 120 'are further described with reference to FIG. 6 is a cross-sectional view of a cleaning device 120 that may be used as the cleaning devices 120 and 120 '.
  • the cleaning device 120 includes a cleaning module 124 and a fluid control system 126. Fluid control system 126 controls the supply and discharge of fluid to cleaning module 124.
  • the cleaning module 124 includes wafer supports 124a-124d, stages. The wafers are placed in the cleaner buffer 16b by the wafer transfer device 40.
  • the internal wafer transfer device 122 sequentially transfers the wafers from the cleaner buffer 16b to the wafer output stage 16c via the wafer supports 124a-124d.
  • the cleaned and dried wafers are removed from the wafer output stage 16c by the wafer transfer device 50.
  • the internal wafer transfer device 122 includes a plurality of grippers 162a-162e (grippers) and vertical and horizontal transfer devices 164.
  • the first gripper 162a transfers the wafer from the cleaner buffer 16b to the first wafer support 124a through first and second positions CP1 and CP2.
  • the second gripper 162b transfers the wafer from the first wafer support 124a to the second wafer support 124b through the second and third positions CP2 and CP3.
  • the third gripper 162c transfers the wafer from the second wafer support 124b to the third wafer support 124c through the third and fourth positions CP3 and CP4.
  • the fourth gripper 162d transfers the wafer from the third wafer support 124c to the fourth wafer support 124d through the fourth and fifth positions CP4 and CP5.
  • the fifth gripper 162e transfers the wafer from the fourth wafer support 124d to the wafer output terminal 16c through the fifth and sixth positions CP5 and CP6.
  • the first wafer W1 is transferred from the cassette 60 to the wafer input end 16a of the wafer reception position RP1 by the wafer transfer device 50.
  • the wafer input end 16a is transferred from the wafer reception position RP1 to the wafer discharge position RP2 by the input end transfer device 77.
  • the wafer W1 is placed by the wafer transfer device 40 from the wafer input end 16a to the wafer transfer station 18 of the first polishing module 10.
  • the wafer W1 is held from the wafer transfer station 18 by the first polishing head 20a of the first polishing module 10.
  • the wafer W1 is polished at the first and second polishing surfaces 14a and 14b by the first polishing head 20a and then placed in the wafer transfer station 18.
  • the wafer W1 is transferred from the wafer transfer station 18 to the cleaner buffer 16b of the first cleaning device 120 by the wafer transfer device 40 and the cleaner buffer 16b by the internal wafer transfer device 122.
  • the second wafer W2 is transferred from the cassette 60 to the wafer input end 16a in the same manner as the first wafer W1.
  • the wafer W2 is transferred by the wafer transfer device 40 from the wafer input end 16a located at the wafer discharge position RP2 to the wafer transfer station 18 'of the second polishing module 10'.
  • the wafer W2 is held from the wafer transfer station 18 'by the first polishing head 20a' of the second polishing module 10 '.
  • the wafer W2 is polished at the first and second polishing surfaces 14a 'and 14b' by the first polishing head 20a ', and then placed in the wafer transfer station 18'.
  • the wafer W2 is transferred by the wafer transfer device 40 from the wafer transfer station 18 'to the cleaner buffer 16b' of the second cleaning device 120 'and by the internal wafer transfer device 122'.
  • the wafer is transferred from the cleaner buffer 16b 'to the wafer output end 16c' through the cleaning module 124 ', and is transferred from the wafer output end 16c' to the cassette 60 by the wafer transfer device 50.
  • a first group of wafers such as the first wafer W1
  • a second group of wafers is processed through the other of the polishing modules 10 and 10 'and the other of the cleaning devices 120 and 120'.
  • FIG. 7 is a plan view of a modified process apparatus 100a.
  • the process apparatus 100a is similar to the process apparatus 100 shown in FIG. 5. The difference is that the cleaning devices 120 and 120 'are disposed on the same side of the processing apparatus 100a, and the wafer input end 16a and the wafer transfer device 40 are disposed opposite.
  • Wafer transfer device 40 is provided with first and second cleaner buffers 16b and 16b 'from wafer input stations 16a to wafer transfer stations 18 and 18' and from wafer transfer stations 18 and 18 '. And transfer the wafers to at least one of
  • the cleaning apparatuses 120 and 120 'used in the process apparatus 100a may be configured to share the cleaner buffer 16b as described with reference to 8 (a), which is a plan view of the cleaning apparatuses 120 and 120'. Can be.
  • the cleaning devices 120 and 120 ' include a buffer transport device 79, which is fastened to the buffer transport device 79 so that the shared cleaner buffer 16b slides. do.
  • the buffer transfer device 79 is configured to transfer the cleaner buffer 16b between the first and second transfer positions TP1 and TP1 '.
  • the cleaner buffer 16b receives the wafers from the wafer transfer device 40, and the internal wafer transfer device 122' of the second cleaner 120 'receives the wafer from the cleaner buffer 16b. This is also where wafers are received.
  • the cleaner buffer 16b receiving the wafers from the wafer transfer apparatus 40 at the second transfer position TP1 ′ is transferred to the first transfer position TP1 by the buffer transfer apparatus 79. Afterwards, the internal wafer transfer device 122 of the first cleaning device 120 takes the wafers from the cleaner buffer 16b.
  • a wafer transfer device 172 may be used, as shown in FIG. 8 (b), which is a plan view of the cleaning devices 120 and 120 '.
  • Wafer transfer device 172 includes a straight track 173, a gripping device 174, and a pair of grippers 175a and 175b, gripper.
  • the grippers 175a and 175b are fastened to the gripping device 174, and the gripping devices 174 are configured to open and close the grippers 175a and 175b.
  • the gripping device 174 is fastened to the straight track 173 so that the gripping device 174 and the grippers 175a and 175b can move between the cleaner buffers 16b and 16b '.
  • the wafer transfer device 40 transfers the first wafer from one of the wafer transfer stations 18 and 18 'to the cleaner buffer 16b' of the second cleaning device 120 '.
  • the first wafer is transferred from the cleaner buffer 16b 'by the internal wafer transfer device 122' of the second cleaning device 120 '.
  • the wafer transfer device 40 transfers the second wafer to wafer transfer stations ( 18 and 18 ') to the washer buffer 16b'.
  • the second wafer is held by the grippers 175a and 175b to allow the internal wafer transfer device 122 of the first cleaning device 120 to pick up the second wafer from the cleaner buffer 16b so that the wafer transfer device 172 can be picked up. Is transferred to the washer buffer 16b of the first washer 120.
  • FIG. 9 is a plan view of the polishing apparatus 5a.
  • the polishing apparatus 5a is similar to the polishing apparatus 5 shown in FIG. Another point is the orientation of the polishing modules 10 and 10 ′.
  • the polishing modules 10 and 10 ' are formed so that the virtual surface A of the first polishing module 10 is perpendicular to the depth direction of the polishing apparatus 5a as shown in FIG. Only the imaginary surface A 'of the two polishing modules 10' is oriented so as to be parallel to the depth direction of the polishing apparatus 5a.
  • the angle Q between the imaginary surfaces A and A 'of the polishing apparatus 5a may have any value between 80 and 95 degrees. In another embodiment, the angle Q may have any value between 60 and 90 degrees.
  • the first polishing module 10 in the polishing apparatus 5a uses P12 and P22 as polishing positions on the first and second polishing surfaces 14a and 14b, respectively, and the second polishing module in the polishing apparatus 5a. 10 'may use P12' and P22 'as polishing positions on the first and second polishing surfaces 14a' and 14b ', respectively.
  • a polishing apparatus 5b according to a modified embodiment of the present invention is described.
  • 10 is a plan view of the polishing apparatus 5b.
  • the polishing apparatus 5b is similar to the polishing apparatus 5a shown in FIG. The difference is that in order to make the width of the polishing apparatus 5b smaller, the center 15b 'of the second polishing surface 14b' of the second polishing module 10 'is disposed in the polishing apparatus 5a. Rather than from the virtual surface A of the first polishing module 10 and closer to the wafer transfer station 18 of the first polishing module 10.
  • polishing apparatus 5a may use P22 'as the polishing position on the second polishing surface 14b' of the second polishing module 10 'while the polishing apparatus 5b may use P21'.
  • polishing devices 5a and 5b may be configured to use other polishing positions that were used in polishing device 5, described with reference to FIGS. 1 and 2.
  • the polishing devices 5a and 5b use P11, P22, P11 'and P22' as polishing positions, P12, P21, P12 'and P21' as polishing positions, or P11, P22. , P12 'and P21' may be configured to use the polishing positions.
  • Polishing apparatuses 5a and 5b may be used in the processing apparatus 100 in place of the polishing apparatus 5 shown in FIG.
  • a processing apparatus 100 including a polishing apparatus 5a is described with reference to FIG. 11.
  • 11 is a plan view of a processing apparatus 100 including a polishing apparatus 5a.
  • the polishing apparatus 5a is installed in the processing apparatus 100 such that the virtual surface A 'of the second polishing module 10' is parallel to the depth direction of the processing apparatus 100.
  • a second polishing module 10 ' having a depth greater than that of the first polishing module 10 is installed adjacent to the first end 120x' of the second cleaning device 120 ', and the second polishing module 10'
  • the first polishing module 10 having a depth smaller than that of the module 10 'is installed on the opposite side thereof.
  • the wafer transfer device 40 and the wafer input end 16a are disposed in the space 120S between the first and second cleaning devices 120 and 120 '. Since the depth of the first polishing module 10 is smaller than the depth of the second polishing module 10 ′, an empty space 130 exists between the first polishing module 10 and the first cleaning device 120. Thus, the engineer may access them through space 130 to maintain wafer transfer device 40 and wafer input end 16a located in space 120S.
  • the polishing apparatuses 5a and 5b can be used in the processing apparatus 100a shown in FIG. 7 in place of the polishing apparatus 5.
  • a process apparatus 100a including a polishing apparatus 5a is described with reference to FIG. 12.
  • 12 is a plan view of a processing apparatus 100a including a polishing apparatus 5a.
  • the second polishing module 10 ′ of the polishing apparatus 5a is provided with a first polishing device such that the first and second cleaning devices 120 and 120 ′ are positioned between the second polishing module 10 ′ and the factory interface 64. And adjacent the first end ends 120x and 120x 'of the second cleaning devices 120 and 120'.
  • the wafer transfer device 40 moves in a straight track 42 to move between the cleaner buffer 16b of the first cleaning device 120 and the wafer transfer stations 18 and 18 'of the polishing modules 10 and 10'. ) Can be mounted. Wafer transfer device 40 transfers wafers from wafer input end 16a to wafer transfer stations 18 and 18 'and from wafer transfer stations 18 and 18' to at least one of cleaner buffers 16b and 16b '. Transport them.
  • An advantage of the processing apparatus 100a including the polishing apparatus 5a is that a large space can be made between the first polishing module 10 and the factory interface 64 that can be used to maintain the processing apparatus 100a. Is the point.
  • the cleaning devices 120 and 120 ′ may include the buffer transfer device 79 or the wafer transfer device 172 described with reference to FIGS. 8A and 8B.
  • Process apparatus 100b includes polishing apparatuses 120 and 120 'and polishing apparatus, such as polishing apparatus 5b shown in FIG.
  • the polishing apparatus 5b has a space 111a between the first polishing module 10 of the polishing apparatus 5b and the first ends 120x and 120x 'of the cleaning apparatuses 120 and 120', A space 111c exists between the second polishing module 10 'and the factory interface 64, and the first polishing module 10' and the first cleaning device 120 'of the polishing apparatus 5b are present.
  • the wafer transfer path 111b is disposed between the ends 120x '.
  • the wafer transfer path 111b connects the space 111a and the space 111c to transfer the wafer between the space 111a and the space 111c.
  • the polishing apparatus 5b has a distance 120D * from the second polishing module 10 'to the factory interface 64 from the first end ends 120x and 120x' of the cleaning apparatuses 120 and 120 '. It may be arranged to be shorter than the distance 120D to the interface 64.
  • Wafer transfer device 40 may transfer wafers from wafer transfer stations 18 and 18 'to at least one of cleaner buffers 16b and 16b' of first and second cleaning devices 120 and 120 '. It is arranged in the space 111a. Space 111a provides a space for engineers to maintain cleaning devices 120 and 120'and polishing device 5b.
  • the buffer 16a * is arrange
  • the buffer 16a * is a device for storing wafers to be transferred by the second wafer transfer device 40 *.
  • the buffer 16a * may be configured to hold the wafers vertically.
  • the second wafer transfer device 40 * is disposed in the space 111c.
  • the second wafer transfer device 40 * is configured to transfer the wafer to be polished from the wafer input end 16a disposed near the factory interface 64 to the buffer 16a *.
  • the second wafer transfer device 40 * may be mounted to the straight track 42 *.
  • the wafers to be polished are transferred from the wafer input end 16a to the buffer 16a * by the second wafer transfer apparatus 40 * and the buffer (by the wafer transfer apparatus 40).
  • 16a * is transferred to at least one of the wafer transfer stations 18 and 18 'of the polishing apparatus 5b and polished in the polishing apparatus 5b by at least one of the polishing heads 20a-20c', Returned to at least one of the wafer transfer stations 18 and 18 'by at least one polishing head 20a-20c' and at least one of the wafer transfer stations 18 and 18 'by the wafer transfer device 40. It is transferred from one to at least one of the cleaner buffers 16b and 16b 'of the cleaning devices 120 and 120'.
  • the processing apparatus 100b may be configured such that the wafer transfer apparatus 40 transfers the wafers polished in the polishing apparatus 5b to the buffer 16a * instead of transferring the wafers polished to the cleaner buffers 16b and 16b '.
  • wafer transfer device 40 * transfers wafers from buffer 16a * to at least one of cleaner buffers 16b and 16b '.
  • the polishing apparatus 5c according to the embodiment of the present invention is described.
  • the polishing apparatus 5c is similar to the polishing apparatus 5 of FIG. 1. Another difference is that the polishing apparatus 5c includes a pivoting wafer transfer apparatus 180 in place of the wafer transfer stations 18 and 18 'of the polishing apparatus 5.
  • the polishing apparatus 5c may further include first and second washing devices 118 and 118 ', a washing device.
  • the pivoting wafer transfer device 180 transfers the wafers with the polishing heads 20a-20c of the first polishing module 10 at the first transfer position 20P, and the wafer transfer apparatus 40 at the parking position. ) And the wafer, and the polishing heads 20a'-20c 'of the second polishing module 10' and the wafer at the second transfer position 20P '.
  • the first transfer position 20P is where the wafer transfer station 18 of the first polishing module 10 is placed in the polishing apparatus 5 of FIG. 1
  • the second transfer position 20P ′ is the second polishing module ( 10 ') is where the wafer transfer station 18' was placed in the polishing apparatus 5 of FIG. 1, the parking position of which the loader 188 of the pivoting wafer transfer apparatus 180 is loaded with the wafer transfer apparatus 40. And between the first and second transfer positions 20P and 20P '.
  • the first cleaning device 118 is located near the first transfer position 20P and the polishing heads 20a-20c and the polishing head when the polishing heads 20a-20c are located at the first transfer position 20P. Ultrapure water may be sprayed toward the wafers supported by the fields 20a-20c.
  • the second cleaning device 118 ' is located near the second transfer position 20P' of the second polishing module 10 'and the polishing heads 20a'-20c' are positioned at the second transfer position 20P '. When positioned, ultrapure water may be sprayed toward the wafers supported by the polishing heads 20a'-20c 'and the polishing heads 20a'-20c'.
  • 15A and 15B are side views of the pivoting wafer transfer device 180 and cleaning devices 118 and 118 '.
  • the loader 188 is in the parking position and the polishing heads 20a and 20a 'are positioned in the first and second transfer positions 20P and above the cleaning devices 118 and 118', respectively. 20P ').
  • the loader 188 is located at the first transfer position 20P below the first polishing head 20a.
  • the pivoted wafer transfer device 180 includes a loader 188, an arm 186, a shaft 184, a pivoted and vertical drive 182, and a rotation axis 181.
  • the loader 188 is a device for transferring the polishing heads and the wafer.
  • the loader is fastened to one end of the arm 186.
  • Another end of the arm 186 is fastened to one end of the shaft 184 as shown in FIGS. 15 (a) and 15 (b).
  • Another end of the shaft 184 is fastened to the pivoting and vertical drive 182.
  • the pivoting and vertical drive 182 is configured to rotate the loader 188 by moving the shaft 184 to move the loader 188 up and down and to rotate the shaft 184 about the axis of rotation 181.
  • the procedure includes (1) transferring the first wafer from the wafer transfer device 40 to the loader 188 placed in the parking position, (2) rotating the loader 188 to the first transfer position 20P, (3) transferring the loader 188 upward to the polishing head 20a, (4) transferring the first wafer to the polishing head 20a, and (5) transferring the loader 188 to the polishing head 20a. Descending from, and (6) returning the loader to the parking position.
  • the pivoted wafer transfer device 180 transfers the second wafer to the polishing head 20a 'in the same manner as the first wafer is transferred to the polishing head 20a.
  • polishing modules 10 and 10 'of polishing apparatus 5c prefer P12 and P12', respectively, as polishing positions for polishing a wafer on first polishing surfaces 14a and 14a '. This is to avoid interference between the loader 188 and the polishing heads 20a-20c 'when the loader 188 is rotated to the transfer positions 20P and 20P'.
  • the polishing apparatus 5c shown in FIG. 14 can be used as an alternative to the polishing apparatus 5 in the processing apparatus 100a shown in FIG. 16 is a plan view of the processing apparatus 100a including the polishing apparatus 5c.
  • the polishing apparatus 5c and the cleaning apparatuses 120 and 120 ' are provided such that the first polishing surface 14a of the first polishing module 10 has the first ends 120x and 120x of the cleaning apparatuses 120 and 120'. Is disposed in the processing apparatus 100a so as to be adjacent to ').
  • the wafer transfer device 40 is disposed adjacent to the loader 188 of the pivoted wafer transfer device 180 and the first end 120x 'of the second cleaning device 120'. Wafer transfer device 40 transfers wafers from wafer input end 16a to loader 188 and from loader 188 to at least one of cleaner buffers 16b and 16b '.
  • FIG. 17 is a vertical sectional view of a rotating device 600 according to an embodiment of the present invention.
  • 18 and 19 are plan views of the rotating device 600 as seen from cross section 600L1 and cross section 600L2 respectively shown in FIG.
  • the rotating device 600 is composed of an upper support 600a, an outer cylindrical support 600b, an inner cylindrical support 600c, and a circular lower support 600d.
  • the supports 600a, 600b and 600c form a support structure with or without the lower support 600d.
  • the outer and inner cylindrical supports 600b and 600c have an upper support such that an annular opening 650 is formed between the lower end of the outer cylindrical support 600b and the lower end of the inner cylindrical support 600c. It is mounted to 600a.
  • the outer cylindrical support 600b includes at least one opening 602 through which the rotating device 600 can be maintained and air can be exhausted from the rotating device 600. .
  • An annular gear 630 is mounted to be coaxially to the inner cylindrical support 600c with the rotational axis 28 at the center thereof. After the gear 630 is mounted, a circular lower support 600d is mounted at the lower end of the inner cylindrical support 600c to cover the space 600S surrounded by the inner cylindrical support 600c. Space 600S is used for fluid supply channels such as vacuum and pressurized air, power supply cables, and data communication cables.
  • a first annular rim 605 is mounted to the lower end of the outer cylindrical support 600b to surround the annular opening 650.
  • the annular outer guide rail 640a is mounted on the first annular frame 605 and the annular inner guide rail so that the annular outer and inner guide rails 640a and 640b surround the annular opening 650.
  • 640b is mounted to the lower support 600d.
  • Second and third annular tedles 608a and 608b are mounted to outer and inner guide rails 640a and 640b to surround the annular opening 650, respectively.
  • the first annular frame 605 allows nozzles of the first group to inject pressurized air toward the annular opening 655a between the outer cylindrical support 600b and the annular shield 655.
  • Mounted along the A second group of nozzles 610b is mounted along the second annular frame 608a to inject pressurized air toward the annular opening 655a (via the space above the outer annular guide rail 640a).
  • a third group of nozzles 610c may spray pressurized air (via the space above the inner annular guide rail 640b) toward the annular opening 655b between the inner cylindrical support 600c and the annular shield 655. And is mounted along the third annular rim 608b.
  • a fourth group of nozzles 610d is mounted along the circumference of the lower support 600d to inject pressurized air toward the annular opening 655b.
  • a fifth group of nozzles 610e may be mounted along the second annular frame 608a to inject pressurized air toward the annular opening 650.
  • a sixth group of nozzles 610f may be mounted along the third annular frame 608b to inject pressurized air toward the annular opening 650.
  • the nozzles 610a-610f of each group are connected to the source of pressurized air through each pressure control device so that the pressure and the flow rate of the pressurized air injected are independently controlled.
  • the annular shield 655 covers the opening 650, with the outer end in the radial direction of the annular shield 655 at the top of at least a portion of the outer guide rail 640a. And a radially inner end of the annular shield 655 is disposed on top of the opening 650 as shown in FIG. 17 such that it is disposed on at least a portion of the inner guide rail 640b.
  • the annular shield 655 is mounted to the outer cylindrical support 600b through mounting plates 656, as shown in FIG. 19.
  • the annular shield 655 is not connected to the inner cylindrical support 600c.
  • the annular shield 655 can be configured to have openings 655a between the outer cylindrical support 655b and the annular shield 655.
  • the openings 655a are used to discharge the air injected from the nozzles 610a and 610b of the first and second groups as shown in FIG.
  • the annular shield 655 is also configured such that an annular opening 655b exists between the annular shield 655 and the inner cylindrical support 600c.
  • the opening 655b is used to discharge the air injected from the nozzles 610c and 610d of the third and fourth groups as shown in FIG.
  • the annular shield 655 and the first to fourth groups of nozzles 610a-610d are used to isolate the annular opening 650 from the space above the annular shield 655.
  • the air injected from the nozzles 610a-610d prevents dirty air from flowing into the annular opening 650 and opens particles 655a that may generate particles from the guide rails 640a and 640b. And 655b).
  • FIG. 20 is a vertical cross-sectional view of the rotating device 600 cut out of the section Z shown in FIG. 21.
  • FIG. 21 is a plan view of the rotating device 600 seen from the section 600L3 shown in FIG. 20.
  • Rotational and vertical drive devices 22a-22c of the polishing heads 20a-20c described with reference to FIGS. 2 and 3 are mounted to the respective head supports 615a-615c.
  • the head supports 615a-615c are thus used as head supporting members for supporting polishing head assemblies comprising polishing heads. Since the head supports 615a-615c are similar to each other, the details are described using the first head support 615a as an example.
  • the head support 615a is positioned at an upper end of the outer guide rail 640a and is movably fastened on the outer guide rail 640a through at least one guide block 645a.
  • the guide block 645a fixedly mounted to the outer end of the head support 615a is fastened to be movable to the outer guide rail 640a.
  • the inner end of the head support 615a is positioned above the inner guide rail 640b and is movably fastened to the inner guide rail 640b through at least one guide block 647a.
  • the guide block 647a fixed to the inner end of the head support 615a is fastened to the inner guide rail 640b to be movable.
  • 22 shows the head support 615a of the rotating device 600, the guide rails 640a or 640b, the guide block 645a or 647a, and the air jet nozzles 610a, 610b and 160e or 610c, 610d and 610f. It is a cross section.
  • the head support 615a may be configured to include outer and inner extensions 616 and 616 * that extend downwards from their outer and inner ends, respectively.
  • the extensions 616 and 616 * are mounted to the respective guide blocks 645a and 645b.
  • the extensions 616 and 616 * each include at least one opening 644 therethrough.
  • the external extension 616 is positioned between the nozzles 610a and 610b of the first and second groups.
  • the second group of nozzles 610b injects pressurized air through the opening 644, and the first group of nozzles 610a injects pressurized air upwards.
  • the internal extension 616 * is located between the third and fourth groups of nozzles 610c and 610d.
  • the third group of nozzles 610c injects pressurized air through the opening 644, and the fourth group of nozzles 610d injects pressurized air upwards.
  • the fifth and sixth groups of nozzles 610e and 610f inject pressurized air toward the annular opening 650 to provide clean air to the wafer processing region located below the annular opening 650.
  • the first and fourth groups of nozzles 610a and 610d may be configured to suck air injected from the second and third groups of nozzles 610b and 610c, respectively.
  • FIG. 23 is a plan view of the rotating device 600 seen from the section 600L4 shown in FIG. 20.
  • the annular shield 655 is disposed above the head supports 615a-615c.
  • the annular shield 655 is used as a shield member to shield the opening 650 from the gear 630.
  • a servo motor 642a which is used to rotate the first head support 615a around the rotation axis 28, is positioned on top of the first head support 615a as shown in FIG. 20. Mounted at 615a, the servo motor 642a may be mounted to the first head support 615a to be positioned above the annular shield 655.
  • Gears 643a attached to the rotating part of the motor 642a are fastened to the gear 630.
  • gear 643a rotates around gear 630.
  • the rotational force of the gear 643a is transmitted to the head support 615a so that the head support 615a rotates about the rotation axis 28 on the guide rails 640a and 640b.
  • Second and third as shown in FIG. 23, such that the second and third head supports 615b and 615c rotate about the axis of rotation 28 about the axis of rotation 28 on the guide rails 640a and 640b.
  • Gears 630b and 643c of the servo motors 642b and 642c for driving the head supports 615b and 615c are also fastened to the gear 630.
  • the servo motor 642a and the gear 630 having the gears 643a can be regarded as one drive mechanism for rotating or conveying the polishing head assembly connected to the servo motor 642a.
  • Angular positions of the head supports 615a-615c with respect to the axis of rotation 28 are independently controlled by the control device 670.
  • the inner cylindrical support 600c includes an output port 680a.
  • Output port 680a provides an interface with channel assembly 682a.
  • Channel assembly 682a is connected to fluid sources such as vacuum, pressurized air, power supply, and control device through output port 680a.
  • the output port 680a is connected to an inlet port 680a * through the channel assembly 682a, which is mounted to the head support 615a.
  • the input port 680a * provides an interface with the rotary and vertical drive 22a and the servo motor 642a to be mounted to the head support 615a.
  • Channel assembly 682a is suspended to upper support 600a using at least one bendable support.
  • the bendable support means 684a supports the channel assembly 682a while being bent such that the channel assembly 682a can be unfolded unobstructed.
  • Output and input ports and channel assemblies for the second and third head supports 615b and 615c have a configuration similar to those of the first head support 615a.
  • polishing heads 20a-20c are fastened to respective head supports 615a-615c via respective shafts 21a-21c and respective rotary and vertical drive devices 22a-22c. That is, the first polishing head assembly including the rotating and vertical driving device 22a and the first polishing head 20a is fastened to the first head support 615a, and the rotating and vertical driving device 22b and the second polishing are The second polishing head assembly including the head 20b is fastened to the second head support 615b, and the third polishing head assembly including the rotational and vertical driving device 22c and the third polishing head 20c is formed. 3 is fastened to the head support 615c.
  • the polishing heads 20a-20c rotate the respective gears 643a-643c using the respective motors 642a-642c to rotate the first and second polishing surfaces 14a and 14b and the wafer transfer station. It can be transferred between 18.
  • Input ports 680a * -680c * are fastened to respective rotary and vertical drive devices 22a-22c and respective polishing heads 20a-20c for supplying and communicating vacuum, pressurized air and power. .
  • the polishing apparatus 5c * includes one polishing module 110 and a wafer transfer device 40.
  • the polishing module 110 is constructed from the polishing module 10 shown in FIGS. 2 and 3 by the polishing module 10 having a third polishing surface 14c, a fourth polishing head 20d, and a second wafer transfer station 18. Is modified to further include *).
  • the three polishing surfaces 14a-14c and the two wafer transfer stations 18 and 18 * of the polishing module 110 are the first wafer transfer station 18, the first polishing surface 14a, the second polishing The surface 14b, the 3rd polishing surface 14c, and the 2nd wafer transfer station 18 * are arrange
  • the first and second wafer transfer stations 18 and 18 * are arranged adjacent to each other.
  • the second wafer transfer station 18 * is arranged such that its center 18c * is located on the circular path 28a.
  • the polishing module 110 allows the polishing heads 20a-20c to transfer the wafer to any of the wafer transfer stations 18 and 18 * and to polish the wafer from anywhere on the polishing surfaces 14a-14c.
  • the polishing heads 20a-20d are conveyed on the first and second wafer transfer stations and the polishing surfaces 14a-14c by the rotating device 26 (not shown in FIG. 25) about the rotation axis 28. do.
  • the wafer transfer device 40 transfers the wafer with the first and second wafer transfer stations 18 and 18 *.
  • the wafer transfer apparatus 40 sequentially supplies the wafers to the first wafer transfer station 18, and the polishing heads 20a-20d transfer the wafers to the first wafer.
  • the second wafer transfer station 18 * is sequentially transferred to the first wafer transfer station 18 for sequential mounting from the transfer station 18.
  • the wafers sequentially transferred from the wafer transfer station 18 to the first, second and third polishing surfaces 14a-14c, and the wafers mounted on the polishing heads 20a-20d are polished surfaces 14a-14c.
  • polishing heads 20a-20d are sequentially transferred from the third polishing surface 14c to the second wafer transfer station 18 *, and the wafers are removed from the polishing heads 20a-20d.
  • Sequentially down to the wafer transfer station (18 *) Becomes, wafers are sequentially removed from the second wafer transfer station (18 *) by the wafer transfer apparatus 40.
  • 26 (a) -26 (h) another method for processing wafers in the polishing apparatus 5c * is described.
  • 26 (a) -26 (f) are sequential plan views of the polishing apparatus 5c * for showing the order of polishing wafers in accordance with an embodiment of the invention.
  • the method comprises (1) first, second, third and fourth polishing heads 20a-20d, respectively, as shown in FIG. 26 (a). (18 *), the third polishing surface 14c and the second polishing surface 14b, and transfer the first wafer W1 to the first wafer transfer station 18 by the wafer transfer device 40. Mounting the wafer W1 from the first wafer transfer station 18 to the first polishing head 20a,
  • the first polishing head 20a is transferred from the first wafer transfer station 18 to the first polishing surface 14a, and the second wafer transfer station 18 *
  • the second polishing head 20b is transferred from the second wafer transfer station 18 * to the first wafer transfer station 18 so as to receive the third polishing head 20c, and the wafer W1 is first polished. Polishing on the first polishing surface 14a by the head 20a, and transferring the second wafer W2 to the second wafer transfer station 18 * by the wafer transfer device 40,
  • the third polishing head 20c is transferred to the second wafer transfer station 18 *, and the wafer W2 is transferred from the second wafer transfer station 18 * to the third. Mounting to the polishing head 20b,
  • the third polishing head 20c is transferred from the second wafer transfer station 18 * to the third polishing surface 14c, and the first wafer transfer station 18 is In order to receive the first polishing head 20a, the second polishing head 20b is transferred from the first wafer transfer station 18 to the second wafer transfer station 18 *, and the wafer W2 is thirdly polished. Polishing on the third polishing surface 14c by the head 20c,
  • the first polishing head 20c is transferred from the first polishing surface 14a to the first wafer transfer station 18, and the wafer W1 is transferred to the first polishing head ( Down to the first wafer transfer station 18 from 20a,
  • the wafer transfer device 40 transfers the wafer W1 from the first wafer transfer station 18 and supplies the third wafer W3, and the wafer W3.
  • the wafer transfer device 40 transfers the wafer W1 from the first wafer transfer station 18 and supplies the third wafer W3, and the wafer W3.
  • the first polishing head 20a is transferred from the first wafer transfer station 18 to the first polishing surface 14a
  • the second polishing head 20b is transferred to the second polishing head 20b. Transferring the wafer W3 from the wafer transfer station 18 * to the first wafer transfer station 18, and polishing the wafer W3 on the first polishing surface 14a by the first polishing head 20a, and
  • the third polishing head 20c is transferred from the third polishing surface 14c to the second wafer transfer station 18 *, and the wafer W2 is transferred to the third polishing head. Lowering from 20c to the second wafer transfer station 18 *.
  • the wafer W2 is transferred from the second wafer transfer station 18 * by the wafer transfer device 40 and the fourth wafer W4 is supplied to the second wafer transfer station 18 *.
  • the wafer W4 is processed in the same manner as the wafer W2 was processed on the third polishing surface 14c by the third polishing head 20c.
  • the polishing apparatus 5c * positions the fourth polishing head 20d on the second polishing surface during the entire process.
  • the first polishing head 20a is moved to the first wafer transfer station 18 and the first polishing surface 14a.
  • the first and second wafers so as to reciprocate between and the third polishing surface 14c, so that the second polishing head 20b does not interfere with the reciprocating movement of the first and third polishing heads 20a and 20c. It is configured to carry out the polishing method by reciprocating between stations 18 and 18 *.
  • the polishing apparatus 5c * shown in FIG. 25 may be used in place of the polishing apparatus 5a in the processing apparatus 100a shown in FIG. 27 is a plan view of the wafer processing apparatus 100a including the polishing apparatus 5c *.
  • the third and second polishing surfaces 14c and 14b are aligned with the cleaning apparatuses 120 and 120 'along the depth direction of the processing apparatus 100a, and the third polishing surface 14c is the cleaning apparatuses 120.
  • a polishing apparatus 5c * is disposed in the processing apparatus 100a to be positioned adjacent to the first end ends 120x and 120x 'of 120'.
  • Wafer transfer device 40 and wafer input end 16a are disposed opposite cleaning devices 120 and 120 '.
  • the wafer transfer device 40 may be mounted to the straight track 42 so that it can be transferred between the wafer input end 16a and the wafer transfer stations 18 and 18 * of the polishing apparatus 5c *. Wafer transfer device 40 transfers wafers from wafer input end 16a to wafer transfer stations 18 and 18 * and from wafer transfer stations 18 and 18 * to at least one of cleaner buffers 16b and 16b '. Transport them.
  • the polishing apparatus 5c * shown in FIG. 25 may be used in place of the polishing apparatus 5b in the processing apparatus 100b shown in FIG. 28 is a plan view of the wafer processing apparatus 100b including the polishing apparatus 5c *.
  • the wafer transfer device 40 disposed adjacent the first ends 120x and 120x 'of the cleaning devices 120 and 120' has a first end 120x and 120x of the cleaning devices 120 and 120 '. ')
  • the polishing apparatus 5c * is enclosed in the processing apparatus 100b so as to be surrounded by the first and second wafer transfer stations 18 and 18 * of the polishing apparatus 5c *, and the buffer 16a *. Is placed.
  • the buffer 16a * is disposed between the first end 120x 'of the cleaning apparatus 120x' and the polishing apparatus 5c *.
  • the polishing apparatus 5c * is also arranged in the processing apparatus 100b such that the third polishing surface 14c faces the factory interface 64 across the second wafer transfer apparatus 40 * disposed in the space 111c. do.
  • the second wafer transfer device 40 * transfers wafers from the wafer input end 16a to the buffer 16a *, and the wafer transfer device 40 moves from the buffer 16a * to the wafer transfer station of the polishing apparatus 5c *. Wafers 18 and 18 * and from wafer transfer stations 18 and 18 * to at least one of cleaner buffers 16b and 16b 'of cleaning devices 120 and 120'.
  • 29 is a plan view of the processing apparatus 200.
  • the process apparatus 200 includes a factory interface 64, two cleaning devices 120V and 120V ', two polishing modules 110a and 110a', a wafer transfer device 40, and a wafer input end 16a. Include.
  • Each polishing module 110a and 110a ' is made by removing the second wafer transfer station 18 * from the polishing module 110 of FIG.
  • Each polishing module 110a and 110a ' may include one to three polishing heads instead of including all four polishing heads 20a-20d.
  • the wafer input end 16a is formed of the first end 120Vx of the first cleaning device 120V and the second cleaning device 120V 'so that the wafer transfer device 50 of the factory interface 64 can transfer the wafers. It is disposed between the second end (120Vx).
  • the wafer input terminal 16a may be configured to accommodate the wafer vertically.
  • the wafer transfer device 40 transfers the wafers to be polished from the wafer input end 16a to the wafer transfer stations 18 and 18 'of the polishing modules 110a and 110a', and transfers the polished wafers to the wafer transfer stations ( 18 and 18 'to the respective cleaner buffers 16Vb and 16Vb' of the cleaning devices 120V and 120V '.
  • Wafer transfer device 40 may be mounted on a straight track 42 between wafer transfer stations 18 and 18 'and wafer input end 16a.
  • the first cleaning device 120V is disposed adjacent to the factory interface 64, the long side 120Va of which is parallel to the long side 64a of the factory interface 64 and thus in the width direction of the process apparatus 200.
  • the second end 120Vy in parallel with the first end 120Vx of the first cleaning device 120V adjacent to the wafer input end 16a and opposite the first end 120Vx is the factory interface 64. It is arranged to be adjacent to the second end 64y of.
  • the cleaner buffer 16Vb of the first cleaning device 120V is disposed at the first end 120Vx of the first cleaning device so that the wafer transfer device 40 can transfer the wafers to the cleaner buffer 16Vb.
  • the output end 16Vc is disposed at the second end 120Vy of the first cleaning device 120V such that the wafer transfer device 50 of the factory interface 64 can transfer wafers from the wafer output end 16Vc.
  • the second cleaning device 120V ' is disposed on the left side or the right side of the processing device 200, the long side 120Va' being parallel to the depth direction of the processing device 200, and the second cleaning device 120V '.
  • the cleaner buffer 16Vb 'of the second cleaning device 120V' is provided with a second end of the second cleaning device 120V 'such that the wafer transfer device 40 can transfer wafers to the cleaner buffer 16Vb'. It is disposed at the first end 120Vx 'opposite to 120Vy').
  • the cleaning apparatus 120V is further described.
  • the cleaning device 120V can also be used as the cleaning device 120V '. That is, the second cleaning device 120V ′ may be the same as the first cleaning device 120V.
  • 30 is a cross-sectional view of the cleaning device 120V according to the embodiment of the present invention.
  • the cleaning apparatus 120V includes a cleaning module 124V for cleaning and drying wafers.
  • the cleaning module 124V includes cleaning chambers 125Va-125Vd (cleaning chamber) and two drying chambers 125Vx and 125Vy, dry chamber.
  • the cleaning chambers 125Va-125Vd are configured to clean the wafers placed on the respective wafer supports 124Va-124Vd with ultrapure water and chemicals.
  • the drying chambers 125Vx and 125Vy are configured to rotate wafers or dry them using isopropyl alcohol (IPA) chemicals placed on the respective wafer supports 124Vx and 124Vy.
  • the cleaning device 120V further includes a fluid control system 126V installed below the cleaning module 124V. Fluid control system 126V controls the supply and discharge of chemicals to cleaning module 124V.
  • the cleaning apparatus 120V further includes two internal wafer transfer apparatuses 122a and 122b.
  • the first internal wafer transfer device 122a includes four gripping devices 70a-70d.
  • Each gripping device includes a gripper 71 and a vertical and gripping drive 72.
  • the vertical and gripping drive 72 is configured to move the gripper 71 vertically, as shown by arrow V in FIG. 30, and to open and close the gripper 71 to grasp or release the wafer.
  • the gripping devices 70a-70d are mounted on a supporting member 73a which is fastened to the linear drive device 74a.
  • the linear drive device 74a is configured to reciprocate the supporting means 73a between the wafer holding position WT1 and the wafer placing position WT2 as shown by arrow L1 in FIG. 30.
  • the gripping devices 70a-70d are located at gripper positions C1-C4, respectively.
  • the gripping devices 70a-70d are located at gripper positions C2-C5, respectively.
  • Gripper positions C1-C5 are vertically aligned with respect to wafer supports 124Va-124Vd of cleaner buffer 16Vb and cleaning chambers 125Va-125Vd, respectively.
  • the second internal wafer transfer device 122b includes two gripping devices 70x and 70y.
  • the gripping devices 70x and 70y are fixedly mounted to respective supporting means 73x and 73y (supporting members) which are fastened to slide on the linear drive device 74b.
  • the linear drive 74b parks the support means 73x and thus the gripping device 70x with the fifth, sixth and seventh gripper positions C5-C7 as shown by arrow L2 in FIG.
  • the linear drive device 74b is configured to transport the gripping devices 70x and 70y separately.
  • the gripping devices 70x and 70y may be fastened to respective straight drive devices so that they can be controlled by the respective straight drive devices instead of being fastened to one straight drive device 74b.
  • the gripping devices 70x and 70y are located at C5-C8, the gripping devices 70x and 70y are connected to the wafer support 124Vd, the second and first drying chambers of the fourth cleaning chamber 125Vd. Vertically aligned with the wafer supports 124Vy and 124Vx and the wafer output stage 16Vc of 125Vy and 125Vx, respectively.
  • FIGs. 31 (a) -31 (u) are sequential plan views of the cleaning apparatus 120V.
  • the method (1) positions the support means 73a of the first internal wafer transfer device 122a at the wafer holding position WT1 as shown in Fig. 31 (a), and the gripping devices 70x and 70y. Is placed at their parking positions 70xp and 70yp, and the first wafer W1 is cleaned by the wafer transfer device 40 (not shown in Figs. 31 (a) -31 (u)). Moving the gripper device 70a to the cleaner buffer 16Vb, holding the wafer W1 from the cleaner buffer 16Vb, and moving the gripper device 70a upward,
  • the supporting means 73a is transferred to the wafer placing position WT2, and the second wafer W2 is transferred to the cleaner buffer 16Vb by the wafer transfer device 40.
  • In the first cleaning chamber 125Va In the first cleaning chamber 125Va,
  • the supporting means 73a is transferred to the wafer placing position WT2, and the third wafer W3 is transferred to the cleaner buffer 16Vb by the wafer transfer device 40.
  • the supporting means 73a is transferred to the wafer placing position WT2, and the fourth wafer W4 is transferred to the cleaner buffer 16Vb by the wafer transfer device 40.
  • the supporting means 73a of the first internal wafer transfer apparatus 122a is transferred to the wafer placing position WT2, and the gripping of the second internal wafer transfer apparatus 122b is carried out.
  • the device 70x is transferred to the gripper position C7, and the gripping devices 70x and 70d-70b are transferred to the first drying chamber 125Vx and the fourth, third and second cleaning chambers 125Vd-125Vb, respectively.
  • the supporting means 73a is transferred to the wafer placing position WT2, the gripping apparatus 70y is transferred to C8, and the gripping apparatus 70x is transferred to C7.
  • the gripping device 70x is moved to the parking position 70xp, the gripping device 70y is moved to the gripper position C7, and the gripping device 70y is removed. 1 is lowered to the drying chamber 125Vx, the wafer W3 is held from the first drying chamber 125Vx, the gripping device 70y is moved upward, and the wafer transfer device 50 is removed from the wafer output terminal 16Vc. Transferring the wafer W2,
  • the gripping apparatus 70y is transferred to the gripper position C8, the gripping apparatus 70y is lowered to the wafer output terminal 16Vc, and the wafer W3 is transferred to the wafer output terminal ( Down to 16Vc, moving the gripping device 70y upward,
  • the gripping apparatus 70y is transferred to the gripper position C6, the gripping apparatus 70y is lowered to the second drying chamber 125Vy, and the wafer W4 is removed. 2 holding from the drying chamber 125Vy, moving the gripping device 70y upward, and transferring the wafer W3 from the wafer output end 16Vc by the wafer transfer device 50,
  • the gripping apparatus 70y is transferred to the gripper position C8, the gripping apparatus 70y is lowered to the wafer output terminal 16Vc, and the wafer W4 is transferred to the wafer output terminal ( Down to 16Vc) to move the gripping device 70y upward, and
  • Lowering the wafer into the wafer drying and cleaning chambers 125Vx, 125Vy and 125Vd-125Va in the method described above means placing the wafer on the respective wafer supports 124Vx, 124Vy and 124Vd-124Va. .
  • the first group of wafers cleaned in the cleaning chambers 125Va-125Vd are dried in the first drying chamber 125Vx and the second group cleaned in the cleaning chambers 125Va-125Vd. Wafers are dried in the second drying chamber 125Vy.
  • the cleaning apparatus 120V may include two or more drying chambers between the last cleaning chamber, such as the fourth cleaning chamber 125Vd, and the wafer output stage 16Vc.
  • the gripping device 70x of the second internal wafer transfer device 122b transfers the wafers from the last cleaning chamber to several drying chambers, and the gripping device of the second internal wafer transfer device 122b. 70y transfers the wafers from the several drying chambers to the wafer output stage 16Vc.
  • the second internal wafer transfer device 122b includes only one of the gripping devices 70x and 70y, which one gripping device from the fourth cleaning chamber 125Vd. Wafers to 125Vx and 125Vy and from drying chambers 125Vx and 125Vy to wafer output stage 16Vc.
  • the cleaner buffer 16Vb may be disposed in a cleaning chamber configured to spray ultrapure water or chemical toward the wafer placed on the cleaner buffer 16Vb.
  • the cleaning device 120V may include two, three or five cleaning chambers between the drying chamber 125Vy and the cleaner buffer 16Vb.
  • the first internal wafer transfer device 122a includes two, three or five gripping devices 70, respectively.
  • cleaning devices 120 and 120 'configured to be used were used.
  • a cleaning device 120V configured to transfer and process the wafers upright such as cleaning device 120V, may be used in place of cleaning devices 120 and 120 '.
  • the wafer output terminal 16Vc 'of the second cleaning device 120V' of FIG. 29 may further include a pivoting device 16P, as shown in FIGS. 32A and 32B.
  • 32 (a) and 32 (b) are side views when the wafers are positioned at the first and second angles, respectively, at the wafer output end 16Vc 'including the pivoting device 16P.
  • the pivoting device 16P is configured to be able to rotate the wafer placed at the wafer output end 16Vc 'between the first and second angles about a rotation axis 16cx vertically penetrating the diameter of the wafer. As shown in Fig.
  • the wafer output stage 16Vc ' receives the wafer from the internal wafer transfer device 122V' of the second cleaning apparatus 120V 'at the position of the first angle, and in Fig. 32 (b). As shown, the wafer is rotated at a second angle by the pivoting device 16P about the axis of rotation 16cx. After the wafer is positioned at the second angle, the wafer transfer device 50 transfers the wafer from the wafer output end 16c '.
  • the difference between the first and second angles may be 90 degrees.
  • the cleaner buffer 16Vb 'of the second cleaning device 120V' may also include a pivoting device 16P.
  • the cleaner buffer 16Vb ' receives the wafer from the wafer transfer device 40 at a third angle and is then rotated by the pivoting device 16P at the first angle. After the cleaner buffer 16Vb 'changes direction from the third angle to the first angle, the internal wafer transfer device 122V' of the second cleaning device 120V 'transfers the wafer from the cleaner buffer 16Vb'.
  • polishing modules 110a and 110a ′ are further described.
  • the second polishing module 110a ' is disposed behind the processing apparatus 200, and the first polishing surface 14a' is adjacent to the first end 120Vx 'of the second cleaning apparatus 120V',
  • the second polishing surface 14b ' is disposed at the rear edge of the processing apparatus 200, and the third polishing surface 14c' crosses the straight line 200L and the first polishing surface of the first polishing module 110a.
  • Disposed behind the processing apparatus 200 so as to face 14a and the wafer transfer station 18 'is arranged to face the wafer transfer station 18 of the first polishing module 110a across a straight line 200L. do.
  • the first polishing module 110a is disposed opposite the second polishing module 110a 'across the straight line 200L, with the second and third polishing surfaces 14b and 14c crossing the space SP1.
  • the first cleaning device 120V faces the third polishing surface 14c across the space SP2 and faces the second cleaning device 120V ', and the first polishing surface 14a has a straight line 200L. Facing the third polishing surface 14c 'of the second polishing module 110a', the wafer transfer station 18 transfers the wafer with the wafer transfer station 18 'of the second polishing module 110a'. Disposed adjacent the device 40.
  • the space SP1 is disposed between the first cleaning device 120V and the first polishing module 110a so that the engineer can access the first cleaning device 120V through the space SP1 for maintenance.
  • the space SP2 is disposed between the first polishing module 110a and the second cleaning device 120V '.
  • the space SP2 is surrounded by the wafer input terminal 16a, the second cleaning device 120V ', the first polishing module 110a, the first cleaning device 120V, and the space SP1.
  • the wafer transfer device 40 is disposed in the space SP2.
  • the method includes (1) transferring the first wafer W1 from the cassette 60 to the wafer input end 16a by the wafer transfer device 50, (2) the wafer W1 by the wafer transfer device 40. ) Is transferred from the wafer input end 16a to the wafer transfer station 18 of the first polishing module 110a, (3) the wafer W1 is transferred from the wafer transfer station 18 to the wafer polishing station 110a of the first polishing module 110a. Mounting on the first polishing head 20a, (4) wafer polishing station about the rotating shaft 28 with the first polishing head 20a to polish the wafer W1 on the polishing surfaces 14a-14c.
  • the method also includes (1) transferring the second wafer W2 from the cassette 60 to the wafer input end 16a by the wafer transfer device 50, and (2) the wafer (by the wafer transfer device 40). Transferring W2) from the wafer input end 16a to the wafer transfer station 18 'of the second polishing module 110a', (3) transferring the wafer W2 from the wafer transfer station 18 'to the second polishing module.
  • the wafer input stage 16a has a second end 120Vy 'of the second cleaning apparatus 120V' and a cleaner buffer 16Vb of the first cleaning apparatus 120V. It may be arranged in the first cleaning device 120V so as to be disposed therebetween. The wafer input terminal 16a may be disposed above or below the cleaner buffer 16Vb of the first cleaning device 120V.
  • the process apparatus 200 may include the second wafer transfer apparatus 40 * and the buffer 16a * illustrated in FIG. 28, and the space SP2 of the process apparatus 200 illustrated in FIG. 29. ) May be further included.
  • the second wafer transfer device 40 * is disposed between the wafer input end 16a and the buffer 16a *, and the first cleaning device (from the wafer input end 16a to the buffer 16a * and from the buffer 16a *). 120V) to transfer wafers to cleaner buffer 16Vb.
  • the buffer 16a * is disposed between the first and second wafer transfer devices 40 and 40 * so that the first wafer transfer device 40 can access it.
  • the buffer 16a * may accommodate the wafers transferred by the first and second wafer transfer devices 40 and 40 * vertically or horizontally.
  • the wafers to be polished are transferred to the wafer input end by the second wafer transfer device 40 *.
  • the first group of polished wafers are buffered 16a by the wafer transfer device 40 from one of the wafer transfer stations 18 and 18'. *)
  • the second group of polished wafers are cleaned in the second cleaning device 120V 'by the wafer transport device 40 from the other of the wafer transfer stations 18 and 18' to be cleaned and dried in the second cleaning device. It is transferred to the buffer 16Vb '.
  • the process apparatus 300 includes a factory interface 64, a wafer transfer apparatus 40 and a polishing apparatus 305.
  • the polishing apparatus 305 includes two polishing modules 110a and 110a 'used in the process apparatus 200 shown in FIG. At least one cleaning and drying chambers may be disposed between the factory interface 64 and the polishing apparatus 305 to clean and dry the wafers polished in the polishing apparatus 305 (not shown in FIG. 33).
  • the polishing surfaces 14a-14c 'of the polishing modules 110a and 110a' may rotate the rotational axes 15a and 15b of the first and second polishing surfaces 14a and 14b of the first polishing module 110a.
  • the straight line N1 to connect is substantially parallel to the depth direction of the process apparatus 300, and connects the rotation axes 15b and 15c of the 2nd and 3rd grinding
  • Straight line N2 is substantially parallel to the width direction of the processing apparatus 300, and the rotation axes 15a 'and 15b of the first and second polishing surfaces 14a' and 14b 'of the second polishing module 110a'.
  • the straight line N3 connecting ') is substantially parallel to the width direction, and the rotation axes 15b' and 15c 'of the second and third polishing surfaces 14b' and 14c 'of the second polishing module 110a'.
  • the wafer transfer device 40 includes the polishing modules 110a and 110a through a space G2 between the third polishing surfaces 14c and 14c 'of the first and second polishing modules 110a and 110a', respectively. Disposed around the third polishing surfaces 14c and 14c 'of the first and second polishing modules 110a and 110a' to exchange wafers with the wafer transfer stations 18 and 18 '. .
  • the processing apparatus 500 includes a cleaning apparatus 520, two polishing modules 10a and 10a ', a factory interface 64, a wafer transfer apparatus 40, a wafer transfer apparatus 40C, a wafer input end 16a, Buffer 16a * and scrubber buffer 16b.
  • the polishing module 10 shown in FIG. 1 may be used as the polishing modules 10a and 10a '.
  • the cleaning apparatus 520 includes three cleaning chambers 125a-125c and two drying chambers 125x and 125y. However, the cleaning apparatus 520 may include six cleaning chambers 125a-125c and 125a '-125c' and four drying chambers 125x, 125y, 125x 'and 125y' (cleaning chambers 125a). '-125c' and drying chambers 125x 'and 125y' are not shown in FIG. 34). Cleaning chambers 125a'- 125c 'may be stacked on cleaning chambers 125a-125c, respectively. Drying chambers 125x 'and 125y' may be stacked on drying chambers 125x and 125y, respectively.
  • the cleaning device 520 has a long side 520a parallel to the long side 64a of the factory interface 64, and the cleaning device 520 has a factory interface 64 and also a long side 64a of the factory interface 64. It is arrange
  • Wafer transfer device 40C is a straight track 42C to transfer wafers from cleaner buffer 16b to cleaning chambers 125a-125c and from cleaning chambers 125a-125c to drying chambers 125x and 125y. Is mounted on.
  • the wafer transfer device 40C includes first and second arms 41a and 41b, arms, which first move the wafer to be cleaned from the cleaner buffer 16b to the cleaning chambers 125a-125c.
  • the second arm 41b is used to transfer the wafer cleaned in the cleaning chambers 125a-125c from the cleaning chambers 125a-125c to the drying chambers 125x and 125y.
  • Wafer transfer device 40C is also configured to transfer wafers from wafer input end 16a to buffer 16a *.
  • Wafer input 16a is a cleaning chamber 125a and a drying chamber 125x adjacent to each other such that wafer transfer device 50 at factory interface 64 can transfer wafers and wafer transfer device 40C can pick up the wafer. It may be disposed between and may be disposed above the cleaning chambers 125a-125c and the drying chambers 125x and 125y.
  • the cleaning chambers 125a-125c and the drying chambers 125x and 125y are each configured to have a first opening towards the wafer transfer device 40C, with the wafer from the wafer transfer device 40C through the first opening.
  • Accept The drying chambers 125x and 125y are each configured to have a second opening towards the wafer transfer device 50, through which the wafer transfer device 50 takes the wafer.
  • the polishing modules 10a and 10a ′ and the wafer transfer device 40 are disposed across the wafer transfer device 40C opposite the factory interface 64.
  • Buffer 16a * and cleaner buffer 16b are disposed between wafer transfer devices 40 and 40C.
  • Wafer transfer device 40 transfers wafers from buffer 16a * to wafer transfer stations 18 and 18 'and from wafer transfer stations 18 and 18' to cleaner buffer 16b.
  • the first polishing module 10a has a straight line connecting the rotation axes 15a and 15b of the polishing surfaces 14a and 14b to a degree substantially parallel to the depth direction of the processing apparatus 500, and the first polishing surface 14a Adjacent to this straight track 42C, the wafer transfer station 18 is disposed to be adjacent to the wafer transfer station 18 'and the wafer transfer device 40 of the second polishing module 10a'.
  • the second polishing module 10a ' is disposed at the rear of the processing apparatus 500, and a straight line connecting the rotation axes 15a' and 15b 'of the polishing surfaces 14a' and 14b 'is the processing apparatus 500. Is substantially parallel to the width direction of the distance from the rotational axes 15a 'and 15b' of the polishing surfaces 14a 'and 14b' of the second polishing module 10a 'to the first interface 64. Greater than the distance from the rotational axis 15a of the second polishing surface 14b of the polishing module 10a to the factory interface 64, the wafer transfer station 18 'facing the wafer transfer device 40, The space SP4 is disposed between the two polishing modules 10 'and the straight track 42C. The space SP4 provides a space in which the wafer transfer device 40, the buffer 16a * and the cleaner buffer 16b are placed. Space SP4 also provides an accessible space for the engineer to maintain polishing modules 10a and 10a 'and cleaning apparatus 520.
  • 35 is a plan view of the processing apparatus 600.
  • the process apparatus 600 includes two cleaning apparatuses 620 and 620 ′, a factory interface 64 and a wafer transfer apparatus 40C.
  • the wafer transfer device 40C is mounted on the straight track 42C.
  • Each of the cleaning devices 620 and 620 ′ includes a cleaner buffer 16b, several cleaning chambers 125a-125c, a drying chamber 125x and a plurality of internal wafer transfer devices 127.
  • Cleaning chambers 125a-125c are disposed between cleaner buffer 16b and drying chamber 125x.
  • Internal wafer transfer devices 127 are arranged and configured to transfer wafers between cleaner buffer 16b and cleaning and drying chambers 125a-125c and 125x.
  • the first cleaning device 620 has a straight track 42C arranged such that its long side 620a is substantially parallel to the long side 64a of the factory interface 64 and parallel to the long side of the factory interface 64. And factory interface 64.
  • the second cleaning device 620 ' is arranged such that the straight track 42C is disposed between the first and second cleaning devices 620 and 620', the long side 620a 'of which the first cleaning device 620 is disposed. It is arranged to be parallel to the long side (620a) of.
  • the processing apparatus 600 further includes a wafer input end 16a, a buffer 16a *, a wafer output end 16c, a second buffer 16b * and a wafer transfer device 40.
  • the wafer input stage 16a and the wafer output stage 16c are provided with a first cleaning device 620 to allow the wafer transfer device 50 of the factory interface 64 to transfer the wafer and the wafer transfer device 40C to take the wafer. And may be disposed above the cleaner buffer 16b and wafer supports 124a-124c and 124x of the first cleaning device 620.
  • the buffer 16a * and the second buffer 16b * allow the wafer transfer device 40C to transfer the wafer to the buffer 16a * and to take the wafer from the second buffer 16b *. ') And may be disposed above the cleaner buffer 16b' and the wafer supports 124a'-124c 'and 124x' of the second cleaning device 620 '.
  • the processing apparatus 600 uses the polishing modules 10a and 10a 'used in the processing apparatus 500 shown in FIG.
  • Wafer transfer device 40 transfers the wafer from buffer 16a * to wafer transfer stations 18 and 18 'of polishing modules 10a and 10a', from wafer transfer stations 18 and 18 '.
  • the wafer is transferred to the second buffer 16b * and the cleaner buffer 16b 'of the second cleaning device 620'.
  • the first wafer W1 is transferred from the cassette 60 to the wafer input end 16a by the wafer transfer device 50, and the buffer 16a * from the wafer input end 16a by the wafer transfer device 40C. Transferring the wafer W1 to the wafer W1, and transferring the wafer W1 from the buffer 16a * to the wafer transfer station 18 of the first polishing module 10a by the wafer transfer device 40,
  • the wafer W1 is mounted from the wafer transfer station 18 to the first polishing head 20a of the first polishing module 10a, and the first polishing head 20a is mounted on the first and second polishing surfaces. Transferring to 14a and 14b, returning the first polishing head to the wafer transfer station 18, and lowering the wafer W1 from the first polishing head 20a to the wafer transfer station 18,
  • the wafer W1 is transferred from the wafer transfer station 18 to the second buffer 16b * by the wafer transfer apparatus 40, and the first arm 41a of the wafer transfer apparatus 40C is used. Transferring the wafer W1 from the second buffer 16b * to the cleaner buffer 16b of the first cleaning device 620,
  • the method for processing a wafer in the processing apparatus 600 also includes (1) buffering the second wafer W2 from the cassette 60 in the same manner as the first wafer W1 was transferred to the buffer 16a *. Transferring the wafer W2 from the buffer 16a * to the wafer transfer station 18 'of the second polishing module 10a' by the wafer transfer device 40,
  • the wafer W2 is mounted from the wafer transfer station 18 'to the first polishing head 20a' of the second polishing module 10a ', and the first polishing head 20a' is mounted first and first. 2 to the polishing surfaces 14a 'and 14b', returning the first polishing head 20a 'to the wafer transfer station 18', and transferring the wafer W2 from the first polishing head 20a 'to the wafer.
  • the wafer transfer device 40 transfers the wafer W2 from the wafer transfer station 18 'to the cleaner buffer 16b' of the second cleaning device 620 ', and the cleaning chambers 125a'-.
  • the wafer W2 is transferred from the drying chamber 125x 'to the wafer output end 16c by the second arm 41b of the wafer transfer apparatus 40C, and the wafer W2 by the wafer transfer apparatus 50. ) Is further transferred from the output end 16c to the cassette 60.
  • the present invention can be used in various apparatuses for polishing and cleaning semiconductor wafers.

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Abstract

L'invention concerne un appareil de polissage comprenant au moins un module de polissage. Chaque module de polissage comprend : au moins une surface de polissage ; au moins une tête de polissage ; au moins une station de transfert de plaquette ; et un dispositif de transfert pour transférer ladite au moins une tête de polissage entre ladite au moins une surface de polissage et ladite au moins une station de transfert de plaquette. Le module de polissage peut comprendre des moyens d'étanchéité afin de protéger ladite au moins une surface de polissage contre des particules externes, ainsi que des dispositifs de pulvérisation de fluide. L'appareil de lavage peut comprendre deux chambres de séchage ou plus afin d'obtenir une productivité élevée.
PCT/KR2010/007675 2009-11-03 2010-11-02 Appareil et procédé de polissage et de lavage d'une plaquette de semi-conducteur Ceased WO2011055960A2 (fr)

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US28044109P 2009-11-03 2009-11-03
US61/280,441 2009-11-03
US28332409P 2009-12-02 2009-12-02
US61/283,324 2009-12-02
US28347909P 2009-12-04 2009-12-04
US61/283,479 2009-12-04
US28369409P 2009-12-08 2009-12-08
US61/283,694 2009-12-08
US28416009P 2009-12-14 2009-12-14
US61/284,160 2009-12-14
US28444809P 2009-12-21 2009-12-21
US61/284,448 2009-12-21
US39909610P 2010-07-06 2010-07-06
US61/399,096 2010-07-06
US12/912,738 US20110104997A1 (en) 2009-11-03 2010-10-26 Apparatuses and methods for polishing and cleaning semiconductor wafers
US12/912,738 2010-10-26

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US20110104997A1 (en) 2011-05-05
KR20120099702A (ko) 2012-09-11
WO2011055960A3 (fr) 2011-11-03
TW201124233A (en) 2011-07-16
KR101814360B1 (ko) 2018-01-04
KR20160135117A (ko) 2016-11-24
KR101684228B1 (ko) 2016-12-12

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