[go: up one dir, main page]

WO2011053077A3 - 태양전지 및 이의 제조방법 - Google Patents

태양전지 및 이의 제조방법 Download PDF

Info

Publication number
WO2011053077A3
WO2011053077A3 PCT/KR2010/007615 KR2010007615W WO2011053077A3 WO 2011053077 A3 WO2011053077 A3 WO 2011053077A3 KR 2010007615 W KR2010007615 W KR 2010007615W WO 2011053077 A3 WO2011053077 A3 WO 2011053077A3
Authority
WO
WIPO (PCT)
Prior art keywords
hole
solar cell
layer
manufacturing
light absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/007615
Other languages
English (en)
French (fr)
Other versions
WO2011053077A2 (ko
Inventor
임진우
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to CN2010800495926A priority Critical patent/CN102598301A/zh
Priority to EP10827161.0A priority patent/EP2485274B1/en
Priority to US13/380,313 priority patent/US9171979B2/en
Priority to JP2012536700A priority patent/JP5624152B2/ja
Publication of WO2011053077A2 publication Critical patent/WO2011053077A2/ko
Publication of WO2011053077A3 publication Critical patent/WO2011053077A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)

Abstract

실시예에 따른 태양전지는, 기판 상에 형성되고 제1 관통홀에 의하여 분리된 후면전극; 상기 제1 관통홀을 포함하는 상기 후면전극 상에 형성된 광 흡수층; 상기 광 흡수층을 관통하여 상기 후면전극을 노출시키는 제2 관통홀; 상기 광 흡수층의 표면에 형성된 버퍼층; 상기 버퍼층 상에 형성된 전면전극층; 및 상기 전면전극층에서 연장되어 상기 제2 관통홀 내부에 형성된 접속배선을 포함한다.
PCT/KR2010/007615 2009-10-30 2010-11-01 태양전지 및 이의 제조방법 Ceased WO2011053077A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2010800495926A CN102598301A (zh) 2009-10-30 2010-11-01 太阳能电池及其制造方法
EP10827161.0A EP2485274B1 (en) 2009-10-30 2010-11-01 Solar cell and manufacturing method thereof
US13/380,313 US9171979B2 (en) 2009-10-30 2010-11-01 Battery and solar method for manufacturing the same
JP2012536700A JP5624152B2 (ja) 2009-10-30 2010-11-01 太陽電池及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0104468 2009-10-30
KR1020090104468A KR101173344B1 (ko) 2009-10-30 2009-10-30 태양전지 및 이의 제조방법

Publications (2)

Publication Number Publication Date
WO2011053077A2 WO2011053077A2 (ko) 2011-05-05
WO2011053077A3 true WO2011053077A3 (ko) 2011-10-13

Family

ID=43922899

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/007615 Ceased WO2011053077A2 (ko) 2009-10-30 2010-11-01 태양전지 및 이의 제조방법

Country Status (6)

Country Link
US (1) US9171979B2 (ko)
EP (1) EP2485274B1 (ko)
JP (1) JP5624152B2 (ko)
KR (1) KR101173344B1 (ko)
CN (1) CN102598301A (ko)
WO (1) WO2011053077A2 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101338615B1 (ko) * 2011-10-04 2014-01-10 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
KR101241467B1 (ko) 2011-10-13 2013-03-11 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101896951B1 (ko) 2011-10-13 2018-09-12 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101305665B1 (ko) * 2011-10-17 2013-09-09 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
US20130118569A1 (en) * 2011-11-14 2013-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming thin film solar cell with buffer-free fabrication process
KR20130109330A (ko) * 2012-03-27 2013-10-08 엘지이노텍 주식회사 태양전지 및 이의 제조 방법
US8809109B2 (en) * 2012-05-21 2014-08-19 Stion Corporation Method and structure for eliminating edge peeling in thin-film photovoltaic absorber materials
KR20130136739A (ko) 2012-06-05 2013-12-13 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101393859B1 (ko) * 2012-06-28 2014-05-13 엘지이노텍 주식회사 태양전지 및 이의 제조 방법
US8987590B2 (en) * 2012-08-01 2015-03-24 International Business Machines Corporation Thin film solar cells
KR20150031889A (ko) * 2013-09-17 2015-03-25 엘지이노텍 주식회사 테양전지
KR102098100B1 (ko) 2013-09-17 2020-04-08 엘지이노텍 주식회사 태양전지 및 이의 제조 방법
KR20150039536A (ko) 2013-10-02 2015-04-10 엘지이노텍 주식회사 태양전지
KR20150093291A (ko) * 2014-02-06 2015-08-18 주성엔지니어링(주) 시인성이 향상된 태양 전지 및 그의 제조 방법
US10453978B2 (en) * 2015-03-12 2019-10-22 International Business Machines Corporation Single crystalline CZTSSe photovoltaic device
CN104993013B (zh) 2015-05-25 2017-12-19 北京四方继保自动化股份有限公司 一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法
US9935214B2 (en) 2015-10-12 2018-04-03 International Business Machines Corporation Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
JP7058460B2 (ja) * 2016-06-30 2022-04-22 ソーラーフロンティア株式会社 光電変換モジュール
JP2018056397A (ja) * 2016-09-29 2018-04-05 日亜化学工業株式会社 メタルベース基板の製造方法、半導体装置の製造方法、メタルベース基板、及び、半導体装置
WO2019241916A1 (zh) * 2018-06-20 2019-12-26 天津三安光电有限公司 一种柔性薄膜太阳电池及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123532A (ja) * 2005-10-27 2007-05-17 Honda Motor Co Ltd 太陽電池
JP2007317885A (ja) * 2006-05-25 2007-12-06 Honda Motor Co Ltd 太陽電池およびその製造方法
KR20090068110A (ko) * 2007-12-21 2009-06-25 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4892592A (en) * 1987-03-26 1990-01-09 Solarex Corporation Thin film semiconductor solar cell array and method of making
DE4333407C1 (de) 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
US20090111206A1 (en) * 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
JP2002094089A (ja) 2000-09-11 2002-03-29 Honda Motor Co Ltd 化合物薄膜太陽電池の製造方法
US6563893B2 (en) 2001-05-17 2003-05-13 Ut-Battelle, Llc Carrier-frequency synchronization system for improved amplitude modulation and television broadcast reception
JP2002343564A (ja) * 2001-05-18 2002-11-29 Sharp Corp 転写用フィルムおよびそれを用いた有機エレクトロルミネッセンス素子の製造方法
JP2005032917A (ja) 2003-07-10 2005-02-03 Dainippon Printing Co Ltd 有機薄膜太陽電池の製造方法および転写シート
JP4681352B2 (ja) 2005-05-24 2011-05-11 本田技研工業株式会社 カルコパイライト型太陽電池
US8900970B2 (en) 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
JP4439492B2 (ja) 2006-05-25 2010-03-24 本田技研工業株式会社 カルコパイライト型太陽電池およびその製造方法
EP1933343A1 (en) * 2006-12-13 2008-06-18 Sony Deutschland Gmbh A method of preparing a porous semiconductor film on a substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123532A (ja) * 2005-10-27 2007-05-17 Honda Motor Co Ltd 太陽電池
JP2007317885A (ja) * 2006-05-25 2007-12-06 Honda Motor Co Ltd 太陽電池およびその製造方法
KR20090068110A (ko) * 2007-12-21 2009-06-25 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법

Also Published As

Publication number Publication date
KR20110047726A (ko) 2011-05-09
WO2011053077A2 (ko) 2011-05-05
US20120199191A1 (en) 2012-08-09
US9171979B2 (en) 2015-10-27
EP2485274A4 (en) 2013-09-18
CN102598301A (zh) 2012-07-18
JP5624152B2 (ja) 2014-11-12
JP2013509706A (ja) 2013-03-14
KR101173344B1 (ko) 2012-08-10
EP2485274A2 (en) 2012-08-08
EP2485274B1 (en) 2014-09-17

Similar Documents

Publication Publication Date Title
WO2011053077A3 (ko) 태양전지 및 이의 제조방법
WO2011055946A3 (ko) 태양전지 및 이의 제조방법
WO2008107094A3 (de) Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle
WO2011053025A3 (ko) 태양전지 및 이의 제조방법
WO2009085224A3 (en) Photovoltaic device having transparent electrode formed with nanoparticles
WO2012169845A3 (ko) 태양전지 기판과 그 제조방법 및 이를 이용한 태양전지
MY153382A (en) Solar cell module
WO2007112452A3 (en) Technique for manufacturing photovoltaic modules
WO2013130179A3 (en) Buffer layer for improving the performance and stability of surface passivation of si solar cells
WO2014049052A3 (de) Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements
EP1898226A3 (en) Method of manufacturing solar cell panel
WO2009038372A3 (en) Thin film type solar cell and method for manufacturing the same
WO2011002211A3 (ko) 태양전지 및 이의 제조방법
WO2013003204A3 (en) Solar module
WO2010121666A3 (en) Electronic structure
WO2012138194A3 (en) Solar cell and manufacturing method thereof
WO2009077975A3 (en) Light emitting device with bonded interface
WO2011098255A3 (de) Photovoltaikmodul mit einer photoaktiven schicht oder solarkollektor mit einem solarabsorber
WO2012015286A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2010110590A3 (ko) 태양 전지 및 그 제조 방법
GB201120782D0 (en) Electrowetting device
WO2012053763A3 (ko) 광산란층을 구비한 염료감응 태양전지모듈 및 그 제조 방법
WO2011053087A3 (ko) 태양전지 및 이의 제조방법
WO2011083995A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2011055954A3 (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080049592.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10827161

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 13380313

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2010827161

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2012536700

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE