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WO2010113659A1 - Dispositif de formation de film, procédé de formation de film et élément électroluminescent organique - Google Patents

Dispositif de formation de film, procédé de formation de film et élément électroluminescent organique Download PDF

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Publication number
WO2010113659A1
WO2010113659A1 PCT/JP2010/054675 JP2010054675W WO2010113659A1 WO 2010113659 A1 WO2010113659 A1 WO 2010113659A1 JP 2010054675 W JP2010054675 W JP 2010054675W WO 2010113659 A1 WO2010113659 A1 WO 2010113659A1
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Prior art keywords
vapor deposition
organic
blowing mechanism
deposition source
film
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PCT/JP2010/054675
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English (en)
Japanese (ja)
Inventor
知彦 江面
浩平 継田
美子 鰐渕
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to CN2010800147449A priority Critical patent/CN102369787A/zh
Priority to JP2011507089A priority patent/JPWO2010113659A1/ja
Publication of WO2010113659A1 publication Critical patent/WO2010113659A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers

Definitions

  • the present invention relates to a film forming apparatus, a film forming method, and an organic EL element, and more particularly to a film structure included in the organic EL element and a film forming apparatus and a film forming method for forming the film structure.
  • an organic EL display using an organic EL (Organic Electroluminescence) element that emits light using an organic compound has attracted attention.
  • This organic EL element has features such as self-emission, fast reaction speed, and low power consumption. For this reason, the image is not only very beautiful as compared with a liquid crystal display, but also requires no backlight, can be thinned, and is particularly expected to be applied to a display unit of a portable device.
  • the organic EL element is formed on a glass substrate and has a structure in which an organic layer is sandwiched between an anode layer (anode) and a cathode layer (cathode).
  • anode anode
  • cathode cathode
  • the injection of electrons and holes causes the organic material vapor to be in an excited state. However, when the excited organic material vapor returns to the original ground state due to recombination of electrons and holes, the excess energy is released as light.
  • an electron injection layer made of a material such as an alkali metal having a low work function is generally formed at the interface between the organic layer and the cathode (see, for example, Non-Patent Document 1).
  • Non-Patent Document 1 discloses forming an organic layer doped with a metal between each cathode and the emitter layer.
  • the dopant metal include lithium (Li), strontium (Sr), and samarium (Sm).
  • Alkali metal is preferable as a material for forming the electron injection layer because it has a small work function.
  • alkali metals are highly active species, they easily react with moisture, nitrogen, oxygen, etc. remaining in the processing chamber in a high vacuum state. Therefore, when the electron injection layer is formed in a state where such an impurity exists on the surface of the organic layer that is the base of the electron injection layer, a metal such as lithium reacts with the impurity at the interface, for example, lithium oxide ( The film was deteriorated, such as being an insulator of Li 2 O).
  • the present invention provides a film forming apparatus, a film forming method, and an organic EL element that prevent deterioration of the metal layer forming the electron injection layer and increase the electron injection efficiency of the same layer. .
  • a processing container that performs a desired process on a target object and an organic material are stored therein, and the stored organic material is heated.
  • a first vapor deposition source to be vaporized, and an object to be processed in the processing container that is incorporated in the processing container and connected to the first vapor deposition source and vaporized in the first vapor deposition source.
  • a first blow-out mechanism that blows out toward the substrate, a second vapor deposition source that contains alkali metal, heats and vaporizes the contained alkali metal, and is incorporated in the processing vessel and is included in the second vapor deposition source.
  • a film forming apparatus having a second blowing mechanism that is connected and blows out the alkali metal vaporized in the second vapor deposition source toward an object to be processed in the processing container.
  • the 1st blowing mechanism which blows off the organic material vaporized by the 1st vapor deposition source toward the to-be-processed object in a processing container, and the alkali metal vaporized by the 2nd vapor deposition source are mentioned above.
  • steam of an organic material, and the 2nd blowing mechanism which blows off the vapor atom of an alkali metal are arrange
  • the film can be formed thicker than the conventional one.
  • the alkali metal layer can be formed to a thickness of 0.5 nm to 100 nm.
  • the alkali metal layer can function not only as an electron injection layer but also as a cathode of an organic EL element.
  • the alkali metal layer in order to prevent the active alkali metal layer from reacting with residual moisture, nitrogen, oxygen, etc. in the processing vessel, immediately after forming the alkali metal layer, such as silicon oxynitride film such as metal, resin, SiN, etc. It is necessary to protect the alkali metal layer with a protective film.
  • the film forming apparatus stores a protective film material, a third vapor deposition source that heats and vaporizes the stored protective film material, and a built-in process container and the third vapor deposition source.
  • a third blowing mechanism that blows out the protective film material that is connected and vaporized in the third vapor deposition source toward the target object in the processing container may be further included.
  • the apparatus may further include a sputtering apparatus that is built in the processing vessel and that sputters a target made of a protective film material.
  • the mounting table includes a mounting table on which the object to be processed conveyed to the processing container is mounted, and the mounting table is configured to move the processing object mounted in the upward, downward, or vertical direction from the first blowing mechanism side to the second. You may make it slide toward the blowing mechanism side.
  • a roller is provided at both ends of the processing container, and the film wound around the rollers at both ends is moved from the first blowing mechanism side toward the second blowing mechanism side by winding the rollers at both ends. You may make it make it.
  • an exhaust device may be disposed at least on the first blowing mechanism side.
  • a partition may be provided between the first blowing mechanism and the second blowing mechanism.
  • the first vapor deposition source is formed from a plurality of crucibles that store a plurality of organic materials
  • the first blowing mechanism is formed from a plurality of blowing portions connected to the plurality of crucibles. A plurality of organic materials vaporized in this manner are blown out from a plurality of blowing portions provided in the first blowing mechanism, thereby continuously forming an organic layer in which a plurality of organic materials are laminated on the object to be processed. Also good.
  • the alkali metal may be any of lithium, cesium, sodium, potassium, or rubidium.
  • the organic material stored in the first vapor deposition source is heated and vaporized, and the organic vaporized in the first vapor deposition source is obtained.
  • a material is blown into a processing container from a first blowing mechanism connected to the first vapor deposition source, and an organic layer is formed on the object to be processed in the processing container by the blown-out organic material.
  • the alkali metal stored in the second vapor deposition source is heated to vaporize the alkali metal vaporized in the second vapor deposition source from the second blowing mechanism connected to the second vapor deposition source.
  • a film forming method in which a metal layer is immediately formed on the organic layer of the object to be processed in the processing container by the alkali metal blown out and blown out.
  • the metal layer may be formed to a thickness of 0.5 nm to 100 nm. According to this, the said metal layer can be functioned as an electron injection layer and an electrode.
  • the protective film material housed in the third vapor deposition source is heated and vaporized, and the protective film material vaporized in the third vapor deposition source is connected to the third vapor deposition source.
  • a protective film may be immediately formed on the metal layer of the object to be processed in the processing container with the blown-out protective film material blown out from the mechanism into the processing container.
  • a target made of a protective film material is sputtered by a sputtering apparatus built in the processing container, and a protective film is immediately formed on the metal layer of the object to be processed in the processing container by the sputtered protective film material.
  • a film may be formed.
  • the surface of the metal layer is etched by an etching apparatus disposed outside the processing container, a target made of a protective film material is sputtered by a sputtering apparatus disposed outside the processing container, and the sputtered protective film material
  • a protective film may be formed immediately on the metal layer of the object to be processed outside the processing container.
  • the metal layer surface is etched by an etching apparatus disposed outside the processing container, plasma is excited from a protective film material gas by a CVD apparatus disposed outside the processing container, and the processing container is excited by the excited plasma.
  • a protective film may be formed immediately on the metal layer of the object to be processed outside.
  • an organic layer formed on the ITO of the object to be processed, and lithium, cesium, sodium, potassium, or rubidium on the organic layer Provided is an organic EL device comprising a metal layer that functions as an electron injection layer and an electrode by forming any of them in a thickness of 0.5 to 100 nm, and a protective film formed on the metal layer.
  • the alkali metal is retained in the processing container at the interface between the alkali metal layer and the organic layer. It can be prevented from reacting with nitrogen, oxygen, etc. and being deteriorated. As a result, a high-performance organic EL element that maintains a high electron injection efficiency can be manufactured.
  • a processing container that performs a desired process on a target object inside, an organic material is stored, and the stored organic material is heated.
  • a first vapor deposition source to be vaporized, and an organic material which is built in the processing container and connected to the first vapor deposition source and vaporized in the first vapor deposition source is applied to an object to be processed in the processing container.
  • a first blowing mechanism that blows out, a first sputtering device that is built in the processing vessel and that sputters a target made of an alkali metal material, and a target that is built in the processing vessel and is made of a protective film material.
  • a second sputtering apparatus that blows out, a first sputtering device that is built in the processing vessel and that sputters a target made of an alkali metal material, and a target that is built in the processing vessel and is made of a protective film material.
  • an exhaust device may be disposed at least on the first blowing mechanism side.
  • a partition may be provided between the first blowing mechanism and the first sputtering apparatus.
  • the present invention As described above, according to the present invention, deterioration of the metal layer forming the electron injection layer can be prevented, and the electron injection efficiency of the same layer can be increased.
  • FIG. 6 is a schematic configuration diagram of a substrate processing system according to first to fourth embodiments and modifications thereof. It is the figure which showed an example of the manufacturing process of the organic EL element which concerns on one Embodiment of this invention. It is a longitudinal cross-sectional view of film-forming apparatus PM1 which concerns on 1st Embodiment.
  • FIG. 5 is a diagram showing an organic EL element formed by a six-layer continuous film forming process according to the first to fourth embodiments. It is a longitudinal cross-sectional view of film-forming apparatus PM1 which concerns on the modification of 1st Embodiment. It is a longitudinal cross-sectional view of film-forming apparatus PM1 which concerns on 2nd Embodiment.
  • the substrate processing system Sys includes a load lock device LLM (Load Lock Module), a transfer device TM (Transfer Module), a cleaning device (pretreatment chamber) CM (Cleaning Module), a film forming device PM1 (Process Module), It has an etching device PM2, a CVD (Chemical Vapor Deposition) device PM3, and a sputtering device PM4.
  • the film forming apparatus PM1 corresponds to a film forming apparatus that continuously forms an organic layer and an alkali metal layer in the same processing container.
  • the load lock device LLM is a vacuum transfer chamber in which a glass substrate G (hereinafter referred to as a substrate G) transferred from the atmospheric system is held in a reduced pressure state in order to transfer the glass substrate G to the transfer device TM in a reduced pressure state.
  • the transfer device TM is provided with a multi-joint transfer arm Arm that can be bent, stretched and swiveled substantially at the center.
  • the substrate G is first transported from the load lock device LLM to the cleaning device CM using the transport arm Arm.
  • the substrate G is formed with ITO (Indium Tin Oxide) as an anode layer, and contaminants (mainly organic matter) adhering to the surface thereof are removed by the cleaning device CM.
  • ITO Indium Tin Oxide
  • FIG. 2 shows a manufacturing process of the organic EL element.
  • the cleaned substrate G is carried into the film forming apparatus PM1.
  • the film forming apparatus PM1 As shown in FIG. 2B, six organic layers 20 are continuously formed on the ITO surface of the substrate by vapor deposition.
  • the metal layer 30 is immediately formed by vapor deposition.
  • a vaporizer is used to form the metal layer 30.
  • the metal forming the metal layer 30 is preferably an alkali metal having a low work function, and in particular, lithium, cesium, sodium, potassium, or rubidium is preferable.
  • the substrate G is held by the arm Arm of the transfer apparatus TM and transferred to the etching apparatus PM2.
  • the etching apparatus PM2 as shown in FIG. 2D, the surface of the metal layer 30 is soft-etched to remove impurities attached to the surface of the metal layer 30.
  • the substrate G is held by the arm Arm of the transfer apparatus TM and transferred to the sputtering apparatus PM4.
  • the sputtering apparatus PM4 atoms of the protective film material jumped out by sputtering a target made of a protective film material such as aluminum or silver are stacked on the metal layer 30.
  • the protective film 40 is formed on the metal layer 30 as shown in FIG.
  • the metal layer 30 When extracting light from the upper part of the laminated film, it is necessary to transmit the light to the metal layer 30, and thus the metal layer 30 needs to be formed thin. In this case, since the metal layer 30 is a thin film, the soft etching shown in FIG. Therefore, a transparent oxide film such as an ITO film may be formed on the surface of the metal layer 30 so that soft etching may not be performed.
  • a CVD apparatus PM3 may be used instead of the sputtering apparatus PM4. Also in this case, as shown in FIG. 2D, first, the surface of the metal layer 30 is soft-etched to remove impurities attached to the surface of the metal layer 30. Thereafter, the substrate G is transferred to the CVD apparatus PM3. In the CVD apparatus PM3, plasma is excited from the protective film material gas, and the protective film 40 is formed on the metal layer of the substrate G by the excited plasma. This also forms the protective film 40 on the metal layer 30 as shown in FIG.
  • the CVD apparatus PM3 excites gases such as a capacitively coupled (parallel plate) plasma processing apparatus, an inductively coupled (ICP) plasma processing apparatus, an ECR (Electron Cyclotron Resonance), and a microwave plasma processing apparatus. Any apparatus may be used as long as it generates plasma and deposits the substrate G using the generated plasma.
  • gases such as a capacitively coupled (parallel plate) plasma processing apparatus, an inductively coupled (ICP) plasma processing apparatus, an ECR (Electron Cyclotron Resonance), and a microwave plasma processing apparatus. Any apparatus may be used as long as it generates plasma and deposits the substrate G using the generated plasma.
  • the controller 50 includes a ROM 50a, a RAM 50b, a CPU 50c, and an input / output I / F (interface) 50d.
  • ROM 50a and the RAM 50b for example, data for controlling the evaporation rate of the organic material when forming the organic layer 20 or controlling the evaporation rate of the alkali metal when forming the metal layer 30 are stored.
  • a control program is stored.
  • Each device of the substrate processing system Sys is controlled by the controller 50.
  • the CPU 50c generates a drive signal for controlling transport and processes in the substrate processing system Sys using data and control programs stored in the ROM 50a and RAM 50b.
  • the input / output I / F 50d outputs a drive signal generated by the CPU 50c to the substrate processing system Sys, inputs a response signal output from the substrate processing system Sys in response to this, and transmits the response signal to the CPU 50c.
  • FIG. 3 is a longitudinal sectional view schematically showing the film forming apparatus PM1 according to this embodiment.
  • the film forming apparatus PM1 includes a processing container 100, a vapor deposition source 200 as a first vapor deposition source, and a vaporizer 300 as a second vapor deposition source.
  • the processing container 100 is a rectangular parallelepiped, and includes a slidable mounting table 110, six first blowing mechanisms 120a to 120f, one second blowing mechanism 130, a partition 140, and a partition 150.
  • Gate valves 160 a and 160 b that can load and unload the substrate G by opening and closing are provided on the sidewall of the processing container 100.
  • the mounting table 110 electrostatically attracts the substrate G carried from the gate valve 160a by a high voltage applied from a high voltage power source (not shown).
  • the mounting table 110 slides on the rail 110a provided on the ceiling surface from the first blowing mechanism 120a side to the second blowing mechanism 130 side in a state where the substrate G is placed downward in this manner. Move. Thereby, the board
  • the first blowing mechanisms 120a to 120f have the same shape and structure, and are arranged in parallel at equal intervals.
  • the first blowing mechanisms 120a to 120f have a rectangular shape with a hollow interior (buffer space S), and blow out organic material vapor from an opening provided at the upper center thereof.
  • Lower portions of the first blowing mechanisms 120a to 120f are connected to the vapor deposition source 200 via first gas supply pipes 170a to 170f penetrating the bottom wall of the processing vessel 100.
  • a second blowing mechanism 130 is provided a little away from the first blowing mechanism 120f.
  • the lower part of the second blowing mechanism 130 is connected to the vaporizer 300 via a second gas supply pipe 180 that penetrates the bottom wall of the processing container 100.
  • the first gas supply pipes 170a to 170f and the second gas supply pipe 180 are respectively provided with valves V1 and V2 for controlling the supply and disconnection of the organic material and the alkali metal material conveyed to the processing container side and the flow rate.
  • partition walls 140 and 150 that partition the blowing mechanisms are provided. This prevents various organic materials and alkali metal materials blown out from the blowout ports of the adjacent first blowout mechanisms 120a to 120f and the second blowout mechanism 130 from being mixed.
  • the processing vessel 100 is provided with an exhaust port 190a on the first blowing mechanism 120a side.
  • the exhaust device 195a connected to the exhaust port 190a is driven, the organic material residue blown from the first blowing mechanisms 120a to 120f is discharged out of the processing container through the exhaust port 190a.
  • the processing container 100 is provided with an exhaust port 190b on the second blowing mechanism 130 side.
  • the exhaust device 195b connected to the exhaust port 190b is driven, the residual atoms of the alkali metal material vapor blown out from the second blowing mechanism 130 are discharged out of the processing container through the exhaust port 190b.
  • vaporized atoms fly to the inside of the processing container and reach the substrate G while being diffused, and are used for film formation. Even gas atoms once adsorbed on the substrate G may be separated from the substrate G and re-enter the processing container. Thus, in the film formation by vapor deposition, the vaporized atoms have a strong tendency to diffuse in a fairly wide range in the processing container.
  • the evaporation source 200 includes six crucibles 210a to 210f having the same shape and structure. Each of the crucibles 210a to 210f accommodates different organic materials A to F, respectively. Heaters 220a to 220f are embedded in the bottom surfaces of the containers in which the organic materials A to F are stored, respectively. By heating the heaters 220a to 220f, respectively, the crucibles 210a to 210f are heated to a high temperature of about 200 to 500 ° C., thereby controlling the vaporization rate of the organic materials A to F. Vaporization includes not only a phenomenon in which a liquid changes into a gas but also a phenomenon in which a solid changes directly into a gas without passing through a liquid state (that is, sublimation).
  • the crucibles 210a to 210f are provided with gas lines for supplying argon gas Ar.
  • Argon gas supplied from the gas line into the crucible 210f causes the organic material vapors A to F vaporized in the crucibles 210a to 210f to pass through the first blowing mechanisms 120a to 120f via the first gas supply pipes 170a to 170f. It is transported to 120f and discharged into the processing container 100 from the outlets of the first blowing mechanisms 120a to 120f.
  • the vapor deposition source 200 is provided with an exhaust port 230. By driving the exhaust device 240, the inside of the processing container is maintained at a desired degree of vacuum.
  • the first gas supply pipes 170a to 170f through which the argon gas and the organic material vapor are passed are also adjusted to a temperature of 200 ° C. or higher, like the crucible. Accordingly, when the organic material vapor is conveyed by the argon gas, it can be prevented from adhering to the first gas supply pipes 170a to 170f and liquefying. Thereby, the material efficiency at the time of forming the organic layer 20 can be improved.
  • a vaporizer 300 that heats and vaporizes lithium is provided outside the processing vessel 100.
  • an evaporation container Ds1 that can store an alkali metal such as lithium is provided inside the vaporizer 300.
  • a power source Ds2 is connected to the evaporation container Ds1.
  • a desired voltage is applied to the power source Ds2 based on the drive signal output from the controller 50, and a predetermined current flows through the evaporation container Ds1.
  • the evaporation container Ds1 is heated and maintained at a desired temperature. In this way, the evaporation amount of lithium stored in the evaporation container Ds1 is adjusted.
  • the material stored in the evaporation container Ds1 may be lithium, sodium, potassium, rubidium, cesium, or the like as long as it is an alkali metal material having a low work function.
  • the vaporizer 300 is connected to the vacuum pump 310 via an opening adjustable valve V3.
  • the inside of the vaporizer 300 is controlled to a desired vacuum pressure by adjusting the opening of the valve V3 based on the drive signal output from the controller 50.
  • the vaporizer 300 is connected to an argon gas supply source 320 via a mass flow controller MFC that adjusts the flow rate of gas and a valve V4.
  • the supply / disconnection and flow rate of the argon gas are adjusted by controlling the mass flow controller MFC and the valve V4 based on the drive signal output from the controller 50.
  • the device for blowing out the alkali metal from the second blowing mechanism 130 is not limited to the vaporizer 300, and a mechanism for directly evaporating and blowing out the alkali metal alone may be used.
  • the second gas supply pipe 180 and the vaporizer 300 that allow argon gas and organic material vapor to pass through are adjusted to a temperature of 200 ° C. or higher. Accordingly, the evaporation rate of lithium can be controlled, and when lithium is transported by argon gas, it can be prevented from adhering to the second gas supply pipe 180 and liquefying. Thereby, the material efficiency at the time of forming the metal layer 30 can be improved.
  • a vapor deposition source having the same configuration as that of the crucible used to form the organic layer 20 may be used. It may be a vessel.
  • the organic layer 20 is formed by the organic material vapor blown from the first blowing mechanisms 120a to 120f, and then the organic material vapor blown from the second blowing mechanism 130. Thus, the organic layer 20 is continuously formed.
  • the organic material vapor blown from the first blowing mechanism 120a travels at a certain speed above the blowing mechanism 120a.
  • the organic material vapor A blown out from the first blowing mechanism 120a is deposited on the substrate G as shown in FIG. A hole injection layer is formed.
  • the organic material vapors B to F blown from the first blowing mechanisms 120b to 120f are deposited on the substrate G, respectively.
  • organic layers second layer to sixth layer
  • the lithium released from the second blowing mechanism 130 is deposited on the substrate G, whereby the metal layer 30 is formed.
  • Alkali metals such as lithium and cesium are preferable as materials for forming the electron injection layer of the organic EL element because of their small work functions.
  • alkali metals are highly active species, they easily react with moisture, nitrogen, oxygen, etc. remaining in the processing chamber in a high vacuum state. Therefore, when the metal layer 30 is formed on the surface of the organic layer 20 that is the base of the metal layer 30 in a state where such impurities are present, an alkali is formed at the interface between the organic layer 20 and the metal layer 30.
  • the metal and the impurities adhering to the organic layer react with each other to cause deterioration in the metal layer 30 such as an insulator of lithium oxide (Li 2 O). For this reason, conventionally, taking into account that an alkali metal such as lithium changes to an insulator, a method of forming a very thin lithium film has been employed. However, even in this case, when the lithium film is formed very thin, the in-plane uniformity of the film is deteriorated and the performance of the organic EL element varies.
  • the film forming apparatus PM1 it is not necessary to transfer the substrate to another chamber after the organic layer 20 is formed and before the metal layer 30 is formed. Therefore, the probability that impurities are deposited on the organic layer is very low. Therefore, the probability that the metal layer 30 immediately formed on the organic layer in the same processing container reacts with impurities at the interface of the organic layer 20 to become an insulator is very low. As a result, the electron injection efficiency of the metal layer 30 can be increased, and the photoelectric conversion efficiency of the organic layer 20 can be increased.
  • the metal layer 30 can be formed to a thickness of 0.5 nm to 100 nm, and the film thickness can be controlled. By forming the metal layer 30 to a certain thickness, the in-plane uniformity of the metal layer 30 can be improved, and variations in the performance of the organic EL element can be suppressed.
  • the metal layer 30 is formed to a thickness of about 50 nm to 100 nm, for example, so that the metal layer 30 can function as an electron injection layer and an electrode (cathode). it can.
  • the damage can be absorbed by the metal layer 30 with respect to sputtering of the protective film in the subsequent process, and damage to the organic layer 20 due to sputtering can be reduced. Can do.
  • the substrate G is transferred to the etching apparatus PM2 of FIG. 1, and the surface of the metal layer 30 that is easily reacted is soft-etched to clean the surface (see FIG. 2D). Thereafter, the substrate is immediately transported to the sputtering apparatus PM4, and argon gas ions are collided with a sputtering material formed from aluminum Al or silver Ag, thereby sputtering sputtering atoms Ag. The sputtered sputtering atoms Ag are deposited on the metal layer 30. Thereby, the protective film 40 shown in FIG. 2E is formed. The protective film 40 prevents oxidation of the highly activated species metal layer 30.
  • the metal layer 30 When extracting light from the upper part of the laminated film, it is necessary to transmit the light to the metal layer 30, and thus the metal layer 30 needs to be formed thin. In this case, since the metal layer 30 is a thin film, the soft etching shown in FIG. Therefore, a transparent oxide film such as an ITO film may be formed on the surface of the metal layer 30 so that soft etching may not be performed.
  • the protective film 40 may be made of a resin other than silver or aluminum as long as it can protect the alkali metal layer 30 which is a highly activated species.
  • a resin is used for the protective film 40, a film formation method by sputtering cannot be used, so a film formation method by vapor deposition or CVD is used.
  • the protective film 40 In the case of an organic EL element that emits light from the ITO side, it is preferable to use silver or aluminum with high light reflectivity as the protective film 40. Further, since the light is transmitted if the protective film 40 is thin, the protective film 40 needs to have a certain thickness in order to emit light from the ITO side. In this case, the protective film 40 cannot be made of a resin that does not reflect light.
  • the protective film 40 in the case of an organic EL element that extracts light from the side opposite to the ITO side (protective film side), it is better to form a thin film of silver or aluminum as the protective film 40 so that light can be easily transmitted. In this case, any resin that does not easily absorb light and easily transmits light can be used for the protective film 40.
  • the thickness ratio between the metal layer 30 such as lithium and the protective film 40 such as aluminum or silver the light transmittance and the light reflectance for the metal layer 30 and the protective film 40 are optimized. can do.
  • the organic layer 20 is formed by depositing the material vapor of the organic material blown from the first blowing mechanisms 120a to 120f on the substrate G. Immediately thereafter, vaporized atoms of alkali metal blown out from the second blowing mechanism 130 in the same space are deposited on the substrate G, whereby the metal layer 30 is formed. According to this, after the organic layer 20 is formed, the metal layer 30 can be formed in the same chamber without transporting the substrate G toward another processing apparatus.
  • the metal layer 30 can be made thicker than before.
  • the metal layer 30 can be formed to a thickness of 0.5 nm to 100 nm.
  • the metal layer 30 can function not only as an electron injection layer but also as a cathode of an organic EL element.
  • the variation in the performance of the organic EL element can be suppressed.
  • the mounting table 110 is installed on the bottom surface of the processing container 100 as shown in FIG.
  • the mounting table 110 mounts the substrate G loaded from the gate valve 160a in an upward state. If gas transport film formation is possible, the film formation substrate may be not only upward (face-up) but also downward (face-down) or vertical (side).
  • the mounting table 110 slides on a rail 110a provided on the bottom surface of the processing container from the first blowing mechanism 120a side to the second blowing mechanism 130 side.
  • substrate G moves in parallel in the slightly upper direction of each blowing outlet in order of the 1st blowing mechanism 120a, 120b, 120c, 120d, 120e, 120f, and the 2nd blowing mechanism 130.
  • the organic layer 20 and the metal layer 30 are continuously formed in the same processing container 100.
  • the film forming process is executed in a state where the substrate G is placed upward. Therefore, even in the case of a large substrate, the substrate G can be easily transported without warping. Further, the in-plane uniformity of the film formed on the substrate can be improved.
  • the deposition of the organic layer 20, the deposition of the metal layer 30, and the deposition of the protective film 40 are continuously performed inside the processing vessel 100. Processed. Therefore, in the film forming apparatus PM1 according to the present embodiment, the vapor deposition source 200 (first vapor deposition source) and the first vapor deposition apparatus provided for depositing the organic layer 20 in the film forming apparatus PM1 according to the first embodiment. In addition to the first blowing mechanism 120a to 120f, the vaporizer 300 (second vapor deposition source) and the second blowing mechanism 130 provided for vapor deposition of the metal layer 30, a sputtering apparatus 400 described below performs processing. It is installed inside the container.
  • the sputtering apparatus 400 is provided next to the second blowing mechanism 130 inside the processing container 100.
  • a partition wall 410 is provided between the second blowing mechanism 130 and the sputtering apparatus 400. Is provided.
  • the sputtering apparatus 400 excites argon gas to generate plasma, sputters a silver target with argon ions, and knocks out silver atoms.
  • the struck silver is deposited on the substrate, whereby the protective film 40 is formed.
  • the sputtering apparatus 400 includes target materials 420a and 420b, backing plates 430a and 430b, target holders 440a and 440b, magnetic field generation means 450a and 450b, and a gas shower head 460.
  • the pair of target materials 420a and 420b are arranged to face each other so that the sputtering surfaces are parallel.
  • the target materials 420a and 420b are preferably silver or aluminum having a low electrical resistance and a high light reflectance as a protective film material.
  • the target materials 420a and 420b are made of silver.
  • the pair of target materials 420a and 420b are held by the target holders 440a and 440b via the backing plates 430a and 430b.
  • the magnetic field generation means 450a and 450b are magnets in this embodiment, and are arranged so that an S-pole magnet is positioned on the target material 420a and an N-pole magnet is positioned on the target 420b on the back surface of each target material 420a and 420b. Yes.
  • a magnetic field perpendicular to each of the target materials 420a and 420b is generated in the facing space of the target materials 420a and 420b so as to surround the space.
  • the argon gas output from the argon gas supply source 320 is supplied from the gas shower head 460 into the processing container.
  • the supply / disconnection and flow rate of the argon gas are adjusted by controlling the mass flow controller MFC and the valve V5 based on the drive signal output from the controller 50.
  • DC power supply 470 applies a desired DC voltage (DC constant power) based on the drive signal output from controller 50 shown in FIG. 1, with each target material 420a, 420b as a cathode and backing plate 430b as an anode. Thereby, plasma is generated in the facing space between the target materials 420a and 420b.
  • the type of power is not limited to DC constant power, and may be AC power, RF power, MF power, pulsed DC power, or the like, or superimposed power thereof.
  • the DC power source 470 is an example of an energy source that supplies desired energy into the processing container 100.
  • An exhaust port 480 and an exhaust device 490 connected to the exhaust port 480 are provided in the vicinity of the sputtering device 400. By driving the exhaust device 490, the remaining target atoms in the processing chamber are exhausted to the outside. .
  • the internal pressure of the processing container 100 greatly affects each film formation.
  • the pressure in the processing container during vapor deposition is preferably about 10 ⁇ 2 Pa.
  • the organic layer 20 and the metal layer 30 are delicate films, and the environment during film formation greatly affects the film quality.
  • the organic layer 20 film reacts with moisture and the like, and dark spots or the like are generated in the film to deteriorate the photoelectric conversion efficiency, The life of the EL element is deteriorated.
  • the metal layer 30 since a highly active metal such as lithium is used for the metal layer 30, the metal layer 30 reacts with oxygen or the like to become an insulator when the pressure in the processing container is high and a large amount of impurities are present, and the electron injection efficiency is increased. Gets worse. For this reason, it is not a good idea to deposit the organic layer 20 and the metal layer 30 in a state where the pressure in the processing container is lower than 10 ⁇ 2 Pa.
  • the film forming apparatus PM1 it is possible to form the high-quality organic layer 20 and the metal layer 30 while preventing the oxidation and nitridation of the organic material and the alkali metal material.
  • the argon gas can be ignited by plasma in the sputtering apparatus 400 provided in the same processing chamber, and sputtering atoms Ag are knocked out by the ions of the argon gas, and as shown in FIG.
  • the protective film 40 can be formed in the same chamber.
  • the metal layer 30 is placed in the processing container. It can be oxidized by reacting with impurities, and can be converted into an insulator to prevent deterioration of the film. In this manner, by forming the protective film 40 in the same chamber before the highly activated species metal layer 30 is oxidized, a high-performance organic EL element with high electron injection efficiency can be manufactured. .
  • the soft etching process ((d) in FIG. 2) performed as the pretreatment for sputtering in the first embodiment is not necessary. Thereby, throughput can be increased and productivity can be improved.
  • sputtering can be performed at a low vacuum of about 10 ⁇ 2 to 10 ⁇ 3 Pa, which is lower than conventional. For this reason, exhaust efficiency becomes high and the time concerning conveyance and processing of substrate G can be shortened conventionally. This can also increase the throughput and improve the productivity.
  • the substrate processing system Sys according to the third embodiment is the same as that of the first embodiment, and the organic EL element is manufactured in the cluster type substrate processing system Sys shown in FIG.
  • the vapor deposition of the organic layer 20, the vapor deposition of the metal layer 30, and the vapor deposition of the protective film 40 are continuously performed inside the processing vessel 100.
  • the vapor deposition source 200 (first vapor deposition source) and the first vapor deposition apparatus provided for depositing the organic layer 20 in the film formation apparatus PM1 according to the second embodiment.
  • a vaporizer 300 (second vapor deposition source) and the second blowing mechanism 130 provided for vapor deposition of the metal layer 30, a vaporizer 500 (first 3) and a third blowing mechanism 510 are installed inside the processing vessel.
  • a vaporizer 500 for vaporizing silver or aluminum is provided in addition to the vaporizer 300 for heating and vaporizing lithium.
  • the vaporizer 500 is connected to a vacuum pump 520 via an opening adjustable valve V6.
  • the inside of the vaporizer 500 is controlled to a desired vacuum pressure by adjusting the opening of the valve V6 based on the drive signal output from the controller 50.
  • the vaporizer 500 is connected to an argon gas supply source 320 via a mass flow controller MFC for adjusting the gas flow rate and a valve V7.
  • the supply / disconnection and flow rate of the argon gas are adjusted by controlling the mass flow controller MFC and the valve V7 based on the drive signal output from the controller 50.
  • the vaporizer 500 and the third blowing mechanism 510 are connected by a third gas supply pipe 530.
  • the third gas supply pipe 530 is provided with a valve V8 that controls the supply and disconnection of the protective film material conveyed to the processing container side and the flow rate.
  • the aluminum or silver evaporated in the vaporizer 500 passes through the passage in the third gas supply pipe 520 to the inside of the processing container using a predetermined amount of argon gas fed into the vaporizer 500 as a carrier gas. Be transported.
  • a partition wall 540 is provided between the second blowing mechanism 130 and the third blowing mechanism 510. Further, an exhaust port 550 is provided on the third blowing mechanism 510 side of the processing container 100. The exhaust port 550 is connected to the exhaust device 560. When the exhaust device 560 is driven, residual silver atoms blown out from the third blowing mechanism 510 are discharged out of the processing container through the exhaust port 550.
  • an evaporation source having the same configuration as that of the crucible used for forming the organic layer 20 may be used.
  • the protective film material gas is a metal material, care must be taken such that it does not become an alloy.
  • the organic material vapors A to F blown from the first blowing mechanisms 120b to 120f
  • organic layers first to sixth layers
  • the lithium released from the second blowing mechanism 130 is deposited on the substrate G, whereby the metal layer 30 is formed.
  • the silver released from the third blowing mechanism 510 is deposited on the substrate G, whereby the protective film 40 is formed.
  • the protective film 40 is immediately formed on the metal layer 30 by the silver blown out from the third blowing mechanism 510 provided in the same processing chamber. Be filmed.
  • the metal layer 30 is placed in the processing container. It can be oxidized by reacting with impurities, and can be converted into an insulator to prevent deterioration of the film. In this manner, by forming the protective film 40 in the same chamber before the highly activated species metal layer 30 is oxidized, a high-performance organic EL element with high electron injection efficiency can be manufactured. .
  • the soft etching step ((d) in FIG. 2) performed as the pretreatment for sputtering in the first embodiment is not necessary. Thereby, throughput can be increased and productivity can be improved.
  • the substrate G is mounted on the mounting table 110, and the mounting table 110 is slid using the rail 110a.
  • the film was continuously formed.
  • rollers 610 and 620 are installed at both ends of the processing container as shown in FIG. By winding the rollers 610 and 620, the film Flm wound around the rollers 610 and 620 at both ends is passed through the second blowing mechanism 130 from the first blowing mechanisms 120a to 120f side through the third blowing mechanism 510.
  • the organic materials A to F, lithium, and silver are blown out from the first blowing mechanism 120a to 120f, the second blowing mechanism 130, and the third blowing mechanism 510, respectively, and sequentially deposited on the film Flm.
  • the organic layer 20, the metal layer 30, and the protective film 40 can be continuously formed on the film Flm in the same space in the processing container.
  • the deterioration during the film-forming of the organic layer 20 and the metal layer 30 that react sensitively to the atmosphere during the film-forming can be prevented.
  • the organic layer 20 is vapor-deposited, the organic material vapor vaporized by the vapor deposition source 200 is blown out from the first blowing mechanisms 120a to 120f toward the substrate, whereby the organic layer 20 is continuously formed into six layers.
  • the membrane is executed.
  • the processing vessel 100 has a built-in sputtering apparatus 401 for forming the metal layer 30 next to the first blowing mechanism 120f. Further, a sputtering apparatus 402 is built in next to the sputtering apparatus 401 to form the protective film 40. Since the main internal configurations of the sputtering apparatus 401 and the sputtering apparatus 402 are the same as those of the sputtering apparatus 400 described in the second embodiment, description thereof is omitted here. Note that the sputtering apparatus 401 corresponds to a first sputtering apparatus, and the sputtering apparatus 402 corresponds to a second sputtering apparatus.
  • the substrate moves to a position below the sputtering apparatus 401, where the metal layer 30 having a high work function is formed.
  • the sputtering apparatus 401 forms a metal layer 30 by stacking the struck magnesium Mg on the substrate by sputtering a target made of, for example, magnesium Mg.
  • the substrate moves below the sputtering apparatus 402 and forms the protective film 40 that functions as a cathode.
  • the sputtering apparatus 402 forms a protective film 40 by sputtering a target made of, for example, silver Ag to stack the struck silver Ag atoms on the substrate.
  • Aluminum Al may be used for the protective film 40.
  • an alkaline dispenser may be used in place of the sputtering apparatuses 401 and 402.
  • a sealing film made of a silicon oxide film SiO 2 , a silicon nitride film SiN, or the like is formed on the protective film 40, thereby manufacturing an organic EL element.
  • an exhaust device 195b is disposed on the first blowing mechanism 120f side, and the organic material vapor blown mainly from the first blowing mechanisms 120a to 120f is exhausted, and the organic material vapor is sputtered. Jumping into the device 401 is prevented.
  • the partition wall 410 between the first blowing mechanism 120 f and the sputtering apparatus 401 prevents the organic material vapor from flying into the sputtering apparatus 401.
  • these structures also prevent sputtered atoms from flying to the organic film forming side.
  • the organic layer 20, the metal layer 30, and the protective film 40 can be formed while preventing oxidation and nitridation of organic materials and alkali metal materials.
  • by arranging the sputtering devices 401 and 402 side by side it is possible to continuously perform film formation under different conditions, different device structures, and sputter film formation of different materials. effective.
  • two sputtering apparatuses are arranged, but three or more sputtering apparatuses may be arranged.
  • a high-performance organic EL device can be stably manufactured without oxidizing an alkali metal that is easily activated.
  • the operations of the respective units are related to each other, and can be replaced as a series of operations in consideration of the relationship between each other. And by replacing in this way, the embodiment of the film forming apparatus for manufacturing the organic EL element is manufactured using the embodiment of the film forming method for manufacturing the organic EL element and the film forming apparatus. It can be set as the embodiment of the made organic EL element.
  • the alkali metal is vaporized to form a film.
  • the alkali metal since the alkali metal has a low melting point, it can be continuously supplied as a liquid. Therefore, in this case, there is a feature that the film can be formed while continuously supplying the alkali metal in a liquid state using a dedicated container instead of the vaporizer.
  • continuous supply of materials is difficult with the vaporizer. For this reason, in order to continuously supply the material by the vaporizer, it is necessary to devise such as preparing a plurality of vaporizers and switching the vaporizers for use.
  • the alkali metal material used in the present invention can be used alone or as a compound. However, in the case of using a compound, it is necessary to enclose a getter material in the vaporizer so that materials other than the metal vapor necessary for forming the film do not enter the film.
  • the processing container 100 and the vapor deposition source 200 of the film forming apparatus are provided separately, but the vapor deposition source of each organic material may be built in one processing container.
  • the object to be processed may be a substrate of 730 mm ⁇ 920 mm or more, or a silicon wafer of 200 mm or 300 mm or more.
  • the organic layer and the work function vapor deposition layer may be formed while the material vapors are mixed with each other.
  • the organic material vapor remaining from the first blowing mechanism 120 a side may fly to the second blowing mechanism 130 side and be mixed into the metal layer 30.
  • lithium may be allowed to fly to the first blowing mechanism 120a to 120f side and mixed into the organic layer 20.

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Abstract

Afin d'empêcher la détérioration d'une couche métallique qui forme la couche d'injection d'électrons d'un élément électroluminescent (EL) organique, l'invention porte sur un dispositif de formation de film (PM1) comprenant un contenant de traitement (100) qui réalise des traitements désirés sur un substrat à l'intérieur de celui-ci ; une source de dépôt en phase vapeur (200) (une première source de dépôt en phase vapeur) qui stocke des matières organiques, et qui chauffe et vaporise les matières organiques stockées ; des premiers mécanismes de pulvérisation (120a-120f) qui sont contenus dans le contenant de traitement (100) et reliés à la source de dépôt en phase vapeur (200), et qui pulvérisent les matières organiques vaporisées dans la source de dépôt en phase vapeur (200) vers le substrat (G) dans le contenant de traitement ; un vaporiseur (300) (une seconde source de dépôt en phase vapeur) qui stocke un métal alcalin tel que le lithium, et qui chauffe et vaporise le métal alcalin stocké ; et un second mécanisme de pulvérisation (130) qui est contenu dans le contenant de traitement (100) et relié au vaporiseur (300), et qui pulvérise le métal alcalin vaporisé dans le dispositif de vaporisation (300) vers le substrat (G) dans le contenant de traitement.
PCT/JP2010/054675 2009-03-31 2010-03-18 Dispositif de formation de film, procédé de formation de film et élément électroluminescent organique Ceased WO2010113659A1 (fr)

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WO2012118199A1 (fr) * 2011-03-03 2012-09-07 東京エレクトロン株式会社 Dispositif et procédé de dépôt en phase vapeur, dispositif d'affichage électroluminescent (el) organique et dispositif d'éclairage
WO2014029845A1 (fr) * 2012-08-24 2014-02-27 Technische Universität Braunschweig Procédé pour revêtir un substrat de plusieurs couches de matériau et dispositif de distribution de plusieurs matériaux pour ce faire

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TW201107502A (en) 2011-03-01
KR20110116210A (ko) 2011-10-25
CN102369787A (zh) 2012-03-07

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