200901814 九、發明說明 【發明所屬之技術領域】 本發明是關於電子裝置、電子裝置之製 膜之構造體、製造電子裝置之製造裝置及電 由其關於密封元件之膜的構造。 【先前技術】 近年來’利用使用有機化合物發光之 (EL: Electroluminescence)元件之有機 £ l 目。該有機EL元件因自發光，反應速度快 等之特徵，故不需要背光，例如期待應用於 顯示部等。 有機EL元件形成在玻璃基板上，設爲J )及陰極層（負極）夾住有機層之三明治構造 層對於水分或氧爲弱，當水分或氧混入時， 非發光點（暗點），成爲縮短有機EL元件之 因此，以不透過外部之水分或氧之方式提高 非常重要。 在此，作爲保護有機層不受外部之溼氣 自以往提案有使用鋁罐等之密封罐之方法< 日本特開2005-166265號公報）。若藉由此， 件以密封材貼合密封罐，並且藉由在密封罐 劑，使有機E L元件密封及乾燥’依此防止 機EL元件中。 造方法、密封 漿處理裝置， 有機電致發光 顯示器受到注 ，消耗電力低 攜帶型機器之 2陽極層（正極 ’其中之有機 特性變化產生 壽命之原因。 膜之密封性爲 影像之方法， _ (例如，參照 在有機 EL元 內部安裝乾燥 水分混入置有 -4- 200901814 再者，也提案有藉由在有機EL元件上形成密封膜， 密封有機EL元件之方法（例如，日本特開2000-223264號 公報）。藉由密封膜所產生之密封則有比起密封罐之構造 較單純可薄型化等之有點。 該密封膜如上述般，除不使水分或氧透過之外，要求 成膜溫度低、膜應力低、自物理性衝擊充分保護元件本身 等。尤其，有機EL元件之時，爲了使發光特性惡化，必 須在低溫下予以成膜。因此，對於密封膜，藉由CVD( Chemical Vapor Deposition:化學蒸鍍薄膜成膜法）可在 1 00°C以下之低溫成膜之氮化矽（SiN)膜可視爲有力。 【發明內容】 [發明所欲解決之課題] 但是，爲了提高膜之密封性，越提升膜之密度，密封 膜中之拉伸應力變強。當該拉伸應力變大時，應力施加至 膜翹曲成碗狀之方向，導致密封膜之剝落或元件或元件和 密封膜之界面附近之破壞的主要原因。 在此，爲了解決上述問題，本發明提供一邊保持密封 膜之密封性，一邊降低膜之內部應力之電子裝置及電子裝 置之製造方法。 [用以解決課題之手段] 即是，爲了解決上述課題，若藉由本發明之某態樣， 則提供一種電子裝置，具有被形成在被處理體上之元件； 200901814 被疊層在上述元件上，含有特定量之碳成分的應力緩和膜 :和被疊層在上述應力緩和膜上，不含有碳成分之阻障膜 〇 發明者精心硏究結果，如第6圖及第7圖所示般，找出 在膜之含碳率和膜應力之間具有相關關係。若藉由此，可 知當對形成密封膜之成分混入特定量之碳（C)成分時，密 封膜中之內部應力則改變。即是，混入至密封膜中之碳成 分越多，膜之內部應力則從拉伸應力變化至壓縮應力側。 利用該相關關係，發明者在被形成在被處理體上之元 件上疊層含有特定量之碳成分之應力緩和膜，並且想出使 含有碳成分之阻障膜疊層於應力緩和膜上之電子裝置。若 依此，因設置有在元件和阻障膜之間含有碳之應力緩和膜 ，故應力緩和膜之膜應力當作緩和阻障膜之拉伸應力之力 量，可以降低密封膜全體之殘留應力。 除此之外，若藉由如此構成，在應力緩和膜又形成阻 障膜。 依此，可以高維持膜全體之密封性。其結果，藉由設 置在元件和阻障膜之間的應力緩和膜，可降低膜應力防止 膜剝落或元件之破損，並且藉由設置在應力緩和膜上之阻 障膜防止外部之水分或氧混入至元件內’依此可以迴避元 件之惡化。其結果’可以將元件之壽命保持較長。 此時，上述阻障膜爲不含有碳成分之氫化氮化矽膜（H :SiNx膜），上述應力緩和膜即使爲含有4原子百分比以 上之碳成分之氫化氮化膜（H: SiCxNy膜）亦可。 200901814 若藉由第7圖所示之膜之含碳率和膜應力之關係，碳 成分之含有率爲4原子百分比（at%)以上之時，應力緩和膜 之膜應力成爲比〇(Mpa)小，成爲壓縮應力。若藉由第7圖 時，不含有碳成分（即是碳含有率爲〇%)之阻障膜之膜應力 由於爲170MPa左右，故當應力緩和膜之膜應力比〇(MPa) 小時，應力緩和膜和阻障膜之膜應力之總合比僅阻障膜存 在於元件上之時變小。依此，可以一面將密封膜之密封性 維持較高，一面較低密封膜之內部應力。 並且，各密封膜主要藉由氫化氮化矽膜所形成。氫化 氮化矽膜是在l〇〇°C以下之低溫藉由CVD(Chemical Vapor Deposition :化學蒸鎪薄膜成膜法）而成膜。其結果，可以 迴避於成膜時元件之特性變化。如此一來，將元件上之密 封膜設爲應力緩和膜及阻障膜之2層構造，且藉由氫化氮 化矽膜形成各密封膜，依此不會使電子裝置之元件之特性 惡化，可以防止膜剝落或元件之破損，可以將元件之壽命 保持保持較長。 上述阻障膜即使爲不含有碳成分之氫化氮化矽膜，上 述應力緩和膜爲含有2原子百分比以上5原子百分比以下之 碳成分的氫化氮化矽膜亦可。 若藉由第7圖所示之碳含有率和膜應力之關係，碳成 分之含有率爲2原子百分比以上5原子百分比以下之時，應 力緩和膜之膜應力取-50〜50(Mpa)之間的値。換言之，碳 成分之含有率爲2原子百分比以上5原子百分比以下之時， 應力緩和膜當作膜應力非常小之膜而發揮功能。依此，若 200901814 藉由如此之構成，在元件和阻障膜之間介在膜應力之非常 小之應力緩和膜。如此一來，藉由當作保護元件之膜應力 之非常小的應力緩和膜發揮功能，阻障膜之拉伸應力直接 作用於元件，依此可以迴避元件破損，或膜剝落之事態。 上述阻障膜和上述應力緩和膜即使各被多數層疊層於 上述元件上亦可。此時，上述阻障膜和上述應力緩和膜各 被交互多數層疊層於上述元件上爲佳。再者，在最內層形 成上述應力緩和膜，以在最外層形成上述阻障膜爲佳。 如第8圖（a)所示般，密封膜之內部是在阻障膜和應力 緩和膜之界面最大。依此，密封膜在阻障膜和應力緩和膜 之界面變形最大。再者，該變形隨著各密封膜之厚度越厚 越大。但是，若藉由如此之構成，阻障膜和應力緩和膜在 元件上各多數層（最佳爲交互）疊層。依此，可以薄化每一 層之各密封層膜之厚度。其結果，如第8圖（b)所示般，藉 由縮小產生在阻障膜和應力緩和膜之介面的餒部應力之大 小，使密封膜全體之內部應力之分佈更均勻，依此可以縮 小密封膜內部之變形。依此，可以更降低膜剝落或元件之 破損之危險性。 即使在最內層形成應力緩和膜，在最外層形成阻障膜 亦可。如此一來，可以一面藉由位於最外層之阻障膜保持 提高密封膜全體之密封性，一面藉由位於最內層之應力緩 和膜降低膜剝落或元件之破損之危險性。 上述阻障膜和上述應力緩和膜即使以上述應力緩和膜 被夾於上述阻障膜之方式，疊層於上述元件上亦可。依此 200901814 ’在元件上依據阻障膜、應力緩和膜、阻障膜之順序形成 3層密封膜。依此，可以提高膜之密封性，可以更減少從 外部對元件所造成之影響。 上述應力緩和膜之碳含有率和厚度及上述阻障膜之厚 度即使以由上述阻障膜之膜應力和上述應力緩和膜之膜應 力所產生之密封膜全體之內部應力之絕對値成爲1 00MPa 以下之方式決定亦可，並且，上述應力緩和膜之碳含有率 和厚度及上述阻障膜之厚度以由上述阻障膜之膜應力和上 述應力緩和膜之膜應力所產生之密封膜全體之內部應力之 絕對値成爲50 MPa以下之方式決定爲佳。再者，上述阻障 膜和上述應力緩和膜之厚度之總合爲5 // m以下爲佳。 若藉由此，由阻障膜之膜應力和應力緩和膜之膜應力 所產生之密封膜全體之內部應力之絕對値成爲lOOMPa(最 佳爲50MPa)以下。依此，可以縮小密封膜全體之內部應 力，降低膜剝落或元件之破損之危險性。 上述電子裝置即使爲有機發光二極體或薄膜電晶體中 之任一者亦可。依此，製造具有藉由上述兩層構造之密封 膜所密封之元件的有機發光二極體或是薄膜電晶體（TFT : Thin Film Transistor)。依此，例如爲了驅動有機顯示器 或液晶顯示器’可以有效保護矩陣狀上所構成之各元件不 受外部之水分等影響。尤其’有機EL元件持有對水分較 弱之性質。依此，可以藉由阻障膜一面迴避使大氣中之水 分混入至元件內，一面藉由應力緩和膜緩和發生於阻障膜 之膜應力’依此可以降低膜剝落或元件之破壞之危險性。 -9- 200901814 再者，爲了解決上述課題，若藉由本發明之其他態樣 ，則提供一種電子裝置之製造方法，在形成於被處理體上 之元件上疊層含有特定量之碳成分之應力緩和膜，在上述 應力緩和膜上疊層不含有碳成分之阻障膜。 再者，爲了解決上述課題，若藉由本發明之其他態樣 ，則提供一種密封膜之構造體，爲密封形成在被處理體上 之元件的密封膜之構造體，具備被疊層在上述元件上，含 有特定量之碳成分之應力緩和膜，和被疊層在上述應力緩 和膜上，不含有碳成分之阻障膜。 再者，爲了解決上述課題，若藉由發明之其他態樣， 則提供一種製造裝置，使用在形成於被處理體上之元件上 疊層含有特定量之碳成分之應力緩和膜，在上述應力緩和 膜上疊層不含有碳成分之阻障膜的電子裝置之製造方法而 製造電子裝置。 並且，爲了解決上述課題，若藉由本發明之其他態樣 ，則提供一種電漿處理裝置，自被供給至處理容器內之氣 體生成電漿，藉由所生成之電漿處理被處理體，具有載置 形成元件之被處理體之載置台，及將氣體供給至上述處理 容器內之氣體供給源，上述氣體供給源供給含有碳成分之 第1氣體，自所供給之第1氣體生成電漿，藉由所生成之電 漿在載置於上述載置台之被處理體上之元件疊層含有特定 量之碳成分之應力緩和膜之後，自上述氣體供給源供給不 含有碳成分之第2氣體，自所供給之第2氣體生成電漿，藉 由所生成之電漿在上述應力緩和膜上疊層不含有碳成分之 -10- 200901814 阻障膜。 若藉由此，藉由阻障膜防止外部之水分或氧混入至元 賤內，依此可以一面迴避元件之惡化’一面藉由設置在元 件和阻障膜之間之應力緩和膜縮小膜應力’依此可以降低 膜剝落或元件之破損之危險性。 並且，爲了解決上述課題，若藉由本發明之其他態樣 ，提供一種電子裝置，具有被形成在被處理體上之元件’ 和被疊層於上述元件上，含有特定量之碳成分之應力緩和 膜。此時，即使上述應力緩和膜爲含有2原子百分比以上5 原子百分比以下之碳成分之氫化氮化矽膜亦可。 如上述般，碳成分之含有率爲2原子百分比以上5原子 百分比以下之時，應力緩和膜當作膜應力非常小之膜發揮 功能。依此，若藉由如此之構成，藉由利用膜應力非常小 之應力緩和膜保護元件上，可以防止膜剝落或元件之破損 ，並且藉由增加例如應力緩和膜之厚度可以有效果性保護 元件。 [發明之效果] 如以上說明般，若藉由本發明，可以藉由一邊保持膜 之密封性，一邊降低膜之內部應力（殘留應力）之密封膜， 有效果保護元件。 【實施方式】 針對本發明之一實施形態，以下一面參照附件圖面一 -11 - 200901814 面予以詳細說明。 並且，在以下之說明及附件圖面中，針對具有相同構 成及功能之構成要素，賦予相同符號，依此省略重複說明 。再者，本說明書中 lmTorr 爲（10·3 X 1 0 1 325/760)Pa， lsccm(lCT6/60)m3/sec 〇 首先，針對本發明之一實施形態所涉及之基板處理裝 置10中，一面參照表示其槪略構成之第1圖一面予以說明 。並且，本實施形態中，針對使用基板處理汪至1 0製造有 機el元件之工程，也包含藉由密封膜密封有機el元件之 工程而予以說明。 本實施形態所涉及之基板處理裝置1 0爲具有多數處理 容器之叢集型之製造裝置，由載置鎖定室LLM、搬運室 TM(Transfer Module)、上處理室 CM 及4個製程模組 PM(Process Module)l 〜PM4所構成。 載置鎖定室LLM是爲了將自大氣系統所搬運之玻璃 基板（以下稱爲「基板」）G搬運置在減壓狀態下之搬運室 TM，將內部保持減壓狀態之真空搬運室。並且，在自大 氣系統被搬入至載置鎖定室LLM之基板G上，事先形成 有銦錫氧化物（ITO: Indium Tin Oxide)以當作陽極層。 在搬運室TM其內部配設有可伸縮及旋轉之多關節狀 之搬運臂Arm。基板G最初使用搬運臂Arm自裝載鎖定 室Um被搬運至前處理室cm，接著被搬運至製程模組 pml，並且搬運至其他製程模組PM2〜PM4。在上處理室 CM中，除去附著於形成於基板G之陽極層之IT0表面之 -12- 200901814 污染物（主要爲有機物）。 在4個製程模組PM1〜PM4中，首先在製程模組PM， 藉由蒸銨在基板之ITO表面連續形成6層有機膜。接著， 基板G被搬運至製程模組PM4。在製程模組PM4中，藉 由濺鍍在基板G之有機層上形成金屬電極。接著，基板G 被搬運至製程模組PM2，在製程模組PM2藉由蝕刻除去有 機膜之一部份。接著，基板G再次被搬運至製程膜組 PM4，在製程模組PM4藉由濺鍍形成金屬電極之側部，最 後被搬運至製程模組PM3，在製程模組PM3藉由CVD形 成密封膜。 在以下中，於說明藉由蒸鍍形成有機膜之製程模組 PM1 4之內部構成（第2圖）之後，說明藉由CVD形成密封模 之製程模組PM3之內部構成（第4圖）。並且，實施蝕刻及 濺鍍之製程模組PM2及PM4，因爲一般之蝕刻裝置及濺鍍 裝置，故省略其內部構成之說明。 (製程模組PM1 :有機膜之成膜處理） 如第2圖模式性表示其縱剖面般，製程模組PM1具有 第1處理容器1〇〇及第2處理容器200，在第1處理容器1〇〇內 ，連續性形成6層之有機膜。 第1處理容器100爲長方體之形狀，在其內部具有滑動 機構110、6個吹出機構120a〜12 Of及7個隔壁130。在第1 處理容器1 〇〇之側壁，設置有可搬入搬出基板G之閘閥 140 ° -13- 200901814 滑動機構1 10具有平台1 10a、支撐體1 10b及滑行機構 110c。平台ll〇a藉由支撐體110b被支撐，將自閘閥140所 搬入之基板g藉由無圖示之高電壓電源所施加之高電壓， 靜電吸附。滑行機構被安裝於第1處理容器100之頂 棚部，並被接地，使基板G與平台110a及支撐體110b同 時朝地1處理容器100之長邊方向滑行，依此，使基板在各 吹出機構120之略些上空平行移動。 6個吹出機構120a〜120f爲形狀及構造所有相同，互 相平行等間隔配置。吹出機構120a〜120f其內部呈中空之 矩形狀，成爲自被設置在其上部中央之開口吹出有機分子 。吹出機構120a〜120f之下部貫通各連結第1處理容器100 之底壁之連結管150a〜150f。 在各吹出機構120之間各設置有隔壁130。隔壁130藉 由區隔各吹出機構120，防止自各吹出機構120之開口所吹 出之有機分子混入至從鄰邊之吹出機構120所吹出之有機 分子之情形。 在第2處理容器2 00內藏有形狀及構造相同之6個蒸鍍 源210a〜210f。蒸鍍源210a〜210f在收納部210al〜210fl 各收納有機料，藉由將各收納部設爲200〜500 °C左右之高 溫，使各有機材料氣化。並且，氣化不僅液體轉變爲氣體 之現象，也包含固體不經液體之狀態直接變成氣體之現象 (所謂昇華）。 蒸鍍源210a〜210f在其上部各連結於連結管150a〜 15 〇f。在各蒸鍍源210被氣化之有機分子藉由將各連結管 -14- 200901814 150保持高溫，不會附著於各連結管15〇，通過各連結管 150自各吹出機構120之開口被放出至第1處理容器100之內 部。並且，第2處理容器200爲了將其內部保持鎖定真空度 ，藉由無圖式之排氣機構減壓至所欲之真空度。 在各連結管150各安裝有閥220a〜220f，當關閉各閥 2 2 0時，收納有各有機材料之蒸鍍源2 1 0內之空間和第1處 理容器之內部空間被遮斷，當打開各閥2 2 0時，兩空間則 連通。在本實施形態中，各閥220雖被釋放至大器中，但 是即使設置在第2處理容器200內亦可。 自各吹出機構120所吹出之有機分子中，首先自吹出 機構120a所吹出之有機分子，附著於以某速度前進吹出 機構120a上方之基板G上之ITO(陽極），依此如第3圖所 示般，在基板G形成第1曾之電洞輸送曾。接著’於基板 G從吹出機構120b序順移動至吹出機構120f之時’自各 吹出機構1 2 0 b〜1 2 0 f吹出之有機分子各堆積於基板G ’依 此順序形成有機層（第2層〜第6層）。如此一來，在表示有 機EL製程之各工程之第5圖中之第5圖（a)所示之基板G之 ITO(陽極）5 00上，形成第5圖（b)所示之有機層510。 (製程模組PM4 :金屬電極之成膜處理） 接著，基板G被搬運至製程膜組PM4內。在製程膜 組PM4內，自被供給至處理容器內之氣體生成電槳’藉由 使所生成之電漿中之離子衝突至標靶（濺鍍）’標粑原子 Ag自標靶飛出。飛出之標靶原子Ag經圖案遮罩而堆疊於 -15- 200901814 有機層510上。依此’形成第5圖（a)所7K之金屬電極（陰極 )520 ° (製程模組ρ Μ 2 :有機膜之蝕刻處理） 接著，基板G被搬運至製程模組ΡΜ2內’自被供給 至容器內之氣體生成電漿，藉由所生成之電漿將金屬電極 520予以遮罩，去除疊層於金屬電極520下部之有機層以外 之有機層（乾蝕刻）。依此’如第5圖（d)所示般’僅位於金 屬電極520下部之有機層殘留於基板G上。 (製程模組PM3 :密封膜之成膜處理） 接著，基板G被搬運至製程模組PM3，藉由第4圖中 模式性表示其縱剖面之RLSA(Radil Line Slot Antenna)電 漿CVD裝置被成膜處理。RLSA電槳CVD裝置具有頂棚 面開口之圓筒狀之處理容器300。在頂棚面之開口嵌入有 噴淋板305。處理容器300和噴淋板305藉由配設在處理容 器3 00之內壁之階差部和噴淋板3 05之下面外周部之間的0 型環而密閉，依此，形成有施予電漿處理之處理室U。例 如，處理容器3 00由鋁等之金屬所構成，噴淋板3 05由鋁等 之金屬或室介電體所構成，被電性接地。 在處理容器300底部經絕緣體320設置有載置晶圓 W 之承載器（載置台）315。在承載器315經整合器325a連接有 高頻電源25b，藉由自高頻電源325b所輸出之高頻電力將 特定偏壓電壓施加至處理容器300內部。再者，在承載器 -16- 200901814 3 15，經線圈3 3 0a連接有高壓直流電源3 3 0b ’藉由自高壓 直流電源330b所輸出之直流電壓靜電吸附基板G。再者 ，在承載器3 1 5之內部爲了冷卻晶圚W，設置有供給冷卻 水之冷卻套管3 3 5。 噴淋板3 05是在在其上部藉由蓋覆板3 40覆蓋。在覆蓋 板3 40之上面設置有徑向線槽天線34 5。徑向線槽天線345 是由被設置於形成多數無圖式之溝槽的圓盤上之溝槽板 345a、保持溝槽板345之圓盤上之天線本體345b，和被設 置於溝槽板3 45 a和天線本體345b之間，由氧化鋁（Al2〇3) 等之介電體所形成之遲相板345所構成。在徑向線槽天線 345經同軸導波管3 50在外部設置有微波產生器3 5 5。 在處理容器3 00安裝有真空泵（無圖式），藉由經氣體 排出管3 60排出處理容器3 00內之氣體，將處理室U減壓 至所欲之真空度。 氣體供給源3 65由多數質量流量控制器 MFC、氨 (NH3)氣體供給源365a、氬（Ar)氣體供給源365b、砂院 (SiH4)氣體供給源3 65 c及三甲基矽烷（（CH3)3SiH; 3MS)氣 體供給源3 65d所構成。氣體供給源3 65藉由各控制各閥V 之開關及各質量流量控制器MFC之開度，將所欲之濃度 之氣體供給至處理容器300之內部。 如此一來，氨氣體及氬氣體（第1氣體之一例）通過第1 流路370a，自貫通噴淋板305之氣體導入管375供給至處理 室U之上方，氬氣體、矽烷氣體及三甲基矽烷氣體（第2氣 體之一例）通過第2流路370b，自一體型氣體管3 80被供給 -17- 200901814 至較第1氣體下方。若藉由如此之構成，藉由自微波產生 器3 3 5經溝槽及噴淋板3 0 5被射入至處理室U內之微波， 自各種氣體生成電漿，藉由所生成之電漿形成由含有碳 (C)成分之氫氧化氮化矽（H : SiCxNy)膜所構成之應力緩和 膜 53 0。 於形成應力緩和膜5 3 0之後，關閉三甲基氣體供給源 3 65d之閥V，自上段供給氬氣體及氨氣體，自下段供給 氬氣體及矽烷氣體。依此’如第5圖（g)所示般’形成由不 含有碳（C)成分之氫氧化氮化矽（H : SiNx)膜所形成之阻障 膜 540 〇 (密封膜之構造） 如上述說明般，在本實施形態所涉及之有機EL元件 製程中，於形成有機層及金屬電極之後（第5圖（a)〜第5圖 (e))，形成含有碳成分之氫氧化氮化矽膜（應力緩和膜 5 3 0)(第5圖（f))，並也形成不含有碳成分之氫氧化氮化矽 膜（阻障膜540)(第5圖（g))。如此一來，發明者發現以兩種 類之密封膜密封有機元件之本實施形態中，比起僅以不含 有碳成分之氫氧化氮化矽膜密封有機元件之時，則有極大 優點。接著，針對由應力緩和膜及阻障膜所構成之2層構 造之密封膜之優點，及以往之問題點予以說明。 一般，對密封基板上之元件之密封膜，要求（1 )自物 理性衝擊充分保護元件，（2)成膜溫度低，（3)不使水分或 氧透過，（4)膜應力低。尤其，於有機EL元件之時，爲了 -18- 200901814 不使發光特性惡化，必須以低溫形成密封膜。再者’大氣 中之水分因爲使有機EL元件惡化’產生非發光點（暗點） 之原因之一，故以不使水分透過之方式提高膜之密封性爲 非常重要。 但是，爲了提高膜之密封性’若越提高膜之密度’密 封膜中之拉伸應力變大’力則施加至使膜翹曲成碗狀之方 向。因此，當提高密封膜之密度以提高膜之密封性時’導 致密封膜之剝落或元件和密封膜之界面附近的破壞’成爲 縮短元件壽命之要因。 面對該問題，發明者由以下之實驗追究一邊保持密封 膜之密封性，一邊降低膜之殘留應力之密封膜之構造。作 爲製程條件，發明者將自RLSA電漿CVD裝置之微波產 生器3 5 5所輸出之微波控制在2.5kW。再者，發明者將處 理室內之壓力設定爲2 6 · 6 P a ’將頂棚面和承載器1 5之間隙 設爲90mm。再者，發明者自上段供給氬氣體及氨氣體， 將該些流量各設爲llSOsccm、113SCCm，自下段供給氬氣 體、矽烷及三甲基矽烷氣體，將該些流量各設爲50 seem、 18〜16sccm、0〜2sccm。矽烷氣體及三甲基矽烷氣體之流 量具有寬度是因爲以矽烷氣體及三甲基矽烷氣體之總合成 爲18SCCH1之方式使各氣體之流量變動。並且，發明者將 承載器之溫度控制在70°C，靜電吸附基板G，將5Torr之 氦（He)氣體而予以冷卻，將處理室內之溫度設定在45 t。 在該狀態下，一邊使三甲基矽烷氣體之流量變化成0 〜2sccm，一邊在基板G形成氫化氮化砂膜。發明者在基 -19- 200901814 板貼上所形成之膜，藉由膜評價裝置測量所貼附之膜之翹 曲量，自所測量之翹曲量求出膜之內部應力。於第6圖及7 圖表示膜組成成分對該結果所取得之三甲基矽烷氣體 (3 MS)之流量的比率及膜應力之關係。依此，藉由使特定 量之碳（C)混入至形成密封膜之矽（Si)、氮（N)及氫（H)成分 ，可知密封膜之內部應力變化。即是如第6圖及第7圖所示 般，發明者追究明白混入至密封膜中之碳成分越多，膜之 內部應力難以從拉伸應力側變化至壓縮應力側。 發明者利用該關係，想出如在有機EL元件上疊層含 有特定量之碳成分之應力緩和膜（例如，含碳氫化氮化矽 膜：H : SiCxNy膜），並且在應力緩和膜上疊層部含有碳 成分之阻障膜（例如氫化氮化矽膜：H : SiNx膜）的密封膜 之構造體。 依此，設置於元件和阻障膜之間之應力緩和膜當作緩 和阻障膜之膜應力而動作。例如，將應力緩和膜設爲含有 第7圖所示之4原子百分比以上之碳成分之氫化氮化矽膜之 時，考慮應力緩和膜之膜應力小於〇(Mpa)。若藉由第7圖 ，不含有碳成分（即是，碳成分之含有率爲〇%)之阻障膜之 膜應力由於爲170MPa程度，故當應力緩和膜之膜應力小 於O(Mpa)時，膜全體之殘留應力比角阻障膜存在於元件上 之時小。 除此之外，若藉由如此之構成，在應力緩和膜上又形 成阻障膜。依此，可以交膜之密封性诶持較高。其結果， 藉由設置在有機EL元件和阻障膜之間之應力緩和膜防止 -20- 200901814 膜剝落或元件之破損，並且藉由設置在最外層之阻障膜防 止外部之水分或氧混入至元件側，依此可以迴避有機EL 元件之惡化。 換言之，藉由將元件上之密封膜設爲應力緩和膜及阻 障膜之兩層構造，可以依邊維持高膜之密封性’一邊抑制 膜之殘留另。如此一來，發明者找出藉由上述密封膜之兩 層構造，不會使有機EL元件之特性惡化，可防止膜剝落 或元件之破損，可長保持有機EL元件之壽命之製造有機 發光二極體之方法。並且，發明者提出以下述之4個例當 作使如此之密封膜之構造體最佳化之實施例。 (密封膜之構造例1 :以應力緩和膜之膜應力成爲特定値以 下之方式控制碳含有率） 首先，發明者想出以應力緩和膜5 3 0之膜應力成爲特 定値以下之方式控制碳含有率，以作爲使密封膜之構造體 予以最佳化之第一例。若藉由第7圖所示之碳含有率和膜 應力之關係，碳成分之含有率爲2原子百分比以上5原子百 分比以下之時，應力緩和膜5 3 0之膜應力之絕對値成爲 50(Mpa)以下，應力緩和膜53 0當作膜應力非常小之膜而發 揮功能。 依此’發明者藉由將三甲基矽烷氣體之流量控制在 0.5scCm〜lsccm左右，在金屬電極520上形成碳成分之含 有率爲2原子百分比以上5原子百分比以下之應力緩和膜 5 3 0 °如此一來，藉由使持有膜應力小於絕對値5〇Mpa之 -21 - 200901814 應力緩和膜介在於金屬電極5 20和阻障膜540之間，可以迴 避阻障膜540之拉伸應力直接作用於金屬電極520。同時藉 由將應力緩和膜5 3 0之厚度最佳爲例如50nm以下，則可以 使應力緩和膜5 3 0發揮功能以當作保護金屬電極520之緩衝 材。 (密封膜之構造力2 :以膜應力之總合成爲特定値以下之方 式控制碳含有率和膜厚） 再者，發明者提出以密封膜全體之膜應力之總合成爲 特定値以下之方式（例如接近於「〇」）之方式控制碳之含 有率和各膜之厚度，以當作使密封膜之構造體予以最佳化 之第二例。當具體說明時，則如第7圖所示般，將三甲基 矽烷氣體之流量設爲2SCCm時，形成-130MPa之膜應力之 含碳氫氧化氮化矽膜。發明者利用此，如第8圖（a)所示般 ，將該應力緩和膜形成280mm，在其上方形成200mm之阻 障膜，依此可以使密封膜全體之膜應力（=(-1 3 0 X 2 8 0) + (1 7 0 X 2 2 0)接近於「0」。如此一來，藉由控制態含有率和 各密封膜之膜厚使膜全體之殘留應力變成非常小，可以一 面藉由阻障膜540保持膜之密封性，一面藉由應力緩和膜 5 3 0降低膜剝落或元件之破損之危險性。 此時，發明者爲了迴避膜剝落，發現以自阻障膜540 之膜應力和應力緩和膜5 3 0之膜應力所產生之密封全體之 殘留應力之絕對値成爲l〇〇Mpa以下（更佳爲50Mpa)之方式 ，決定碳含有率和膜厚爲較佳。再者，以應力緩和膜5 3 0 -22- 200901814 和阻障膜540之厚度總合爲5/zm以下爲佳。其結果，可以 一面藉由阻盎膜540保持膜之密封性，一面藉由應力緩和 膜53 0更降低膜剝落或元件之破損之危險性。 (密封膜之構造例3 :以膜之內部應力之分佈成爲均勻之方 式，多數疊層各膜）。 並且，發明者導出以密封膜全體之內部應力成爲均勻 之方式，使各密封膜多數層疊層之方法，以作爲使密封膜 之構造體予以最佳化之第三例。若藉由上述密封膜之構造 例2時，則如第8圖（a)之左側表示密封膜內部之膜應力之 分佈般，膜之內部應力在應力緩和膜5 3 0和阻障膜540之界 面成爲最大。即是’可知密封膜在應力緩和膜5 3 0和阻障 膜540之界面變形最多。該變形很有可能成爲膜剝落或元 件破損之原因。在此，發明者爲了謀求密封膜之內部應力 之均勻化，提案在金屬電極520上各多數層疊層應力緩和 膜5 30和阻障膜540。此時，如第8圖（b)所示般’應力緩和 膜530和阻障膜540各交互多數層疊層於金屬電極520上。 再者，在最內層形成應力緩和膜5 3 0，在最外層形成阻障 膜 540。 如上述般，應力緩和膜530和阻障膜540在該些界面變 形最大。然後’該變形是各層之厚度越厚越大。但是’右 藉由本例所示之密封膜之構造體時’應力緩和膜5 3 0和阻 障膜540各以多數層（最佳爲交互多數層）被疊層於金屬電 極520上。依此，可以使各層之膜厚薄化。例如’如第8圖 -23- 200901814 (b)所示般，於交互各疊層兩層應力緩和膜530和阻障膜 5 4 0之時，在應力緩和膜5 3 0和阻障膜5 4 0之界面所產生之 內部應力比起僅各疊層1層應力緩和膜530和阻障膜540之 第8圖（a)時成爲一半。如此一來’藉由使密封膜全體之內 部應力分佈更均勻，則可以縮小產生在應力緩和膜5 3 0和 阻障膜540之界面的變形。其結果’可以更降低膜剝落或 元件之破損之危險性。並且’最內層形成應力緩和膜5 3 0 ，最外層形成阻障膜5 4 0 ’依此可以一面將膜全體之密封 性保持較高，更有效果降低膜剝落或元件破損之危險性。 (密封膜之構造例4 :以極力抑制碳（雜質）含有量之方式抑 制膜厚） 再者，發明者也想出以極力抑制應力緩和膜5 3 0之碳（ 雜質）含有量之方式，控制膜厚之方法，以作爲使密封膜 之構造體予以最佳化之第四例。當具體說明時’則如第7 圖所示般，將三甲基矽烷氣體之流量設爲〇.5〜1 seem時， 形成50〜-50MPa之膜應力之含碳氫氧氮化矽膜。利用此 ，發明者將膜應力之絕對値爲5 OMPa以下之應力緩和膜 5 3 0形成25 0mm，在其上形成25 0mm之阻障膜540，依此以 極力抑制混入至應力緩和膜5 3 0之碳（雜質）之量之方式加 以控制。如此一來，極力抑制碳（雜質）之量，提高密封性 ，並且藉由疊層阻障膜540，一面將膜之密封性保持較高 ，一面極力降低膜剝落或元件之破損之危險性。 並且，在即使在元件上依照阻障膜、應力緩和膜 '阻 -24- 200901814 障膜之順序形成3層密封膜亦可。如此一來’藉由夾住應 力緩和膜之2層阻障層’可以更提高膜之密封性’其結果 ,可以更降低自外部對元件之影響。 如上述般說明，發明者精心硏究結果，導出膜所含有 之碳成分和膜內部之相關關係。發明者利用該相關關係’ 形成於基板之元件上疊層含有特定量之碳成分之應力緩和 膜53 0，並且成功開發使不含有碳成分之阻障膜5 40疊層於 應力緩和膜530上之電子裝置。該電子裝置裝置具有藉由 被設置在元件和阻障膜5 4 0之間之應力緩和膜5 3 0防止膜剝 落或元件之破損，並且可以藉由形成在應力緩和膜5 3 0上 之阻障膜5 4 0，將密封膜之密封性維持較高之優點。尤其 ，發明者發現本實施形態所揭示之多層構造之密封膜對於 由於外部之水分或氧混入至元件側使得元件之發光特性顯 著下降之有機EL元件之密封用密封膜非常有效。 (變形例） 接著，針對本發明之變形例予以說明。在本變形例中 ，在金屬電極520上僅疊層應力緩和膜530，在應力緩和膜 5 3 0上不疊層阻障膜540。此時，應力緩和膜5 3 0，以含有2 原子百分比以上5原子百分比以下之碳成分的氫化氮化矽 爲佳。 如上述般，碳成分之含有率爲2原子百分比以上5原子 百分比以下之時，應力緩和膜5 3 0之膜應力之絕對値成爲 50(Mpa)以下，應力緩和膜5 3 0當作膜應力非常小之膜發揮 -25- 200901814 功能。依此，若藉由如此之構成，藉由以膜應力非常小之 應力緩和膜53 0保護元件上，可以防止膜剝落或元件之破 損，並且使應力緩和膜5 3 0之厚度最佳化，可以有效果密 封元件。 (形成密封膜之CVD裝置之變形例） 在密封膜之成膜處理上，可以使用設置有由形成地磚 形之多數片介電體配件所構成之介電體窗之電漿CVD裝 置，以取代上述RLSA電漿CVD裝置。以下，針對變形 例所涉及之電槳CVD裝置之內部構成，一面參照第9圖一 面予以簡單說明。 變形例所涉及之電漿CVD裝置具有處理容器410，在 其內部設置有用以載置基板G之承載器441 (載置台）。在 承載器411之內部設置有供電部411a及加熱器411b。在供 電部411a經整合器41 2a連接高頻電源41 2b，藉由自高頻 電源412b所輸出之高頻電力，對處理容器300之內部施加 特定之偏壓電壓，並且經線圈4 1 3 a連接高壓直流電源 413b，藉由自高壓直流電源413b所輸出之直流電壓靜電 吸附基板G。在加熱器411b連接有交流電源414，藉由自 交流電源44所輸出之交流電壓將基板g保持特定溫度。 處理容器410之底面開口成筒狀，藉由伸縮囊415及升 降板416密閉。承載器411是與升降板416及筒狀417成爲一 體而予以升降，依此被調整承因應處理製程之高度。在承 載器411周圍設置有調整處理室U之氣流之緩衝板418。 -26- 200901814 並且，在處理容器410安裝有真空泵（無圖式），經氣體排 出管419排出處理容器410內之氣體，依此將處理室U減 壓置所欲之真空度。 在蓋體420設置有蓋本體421、6根導波管43 3、開槽天 線430及介電體窗（多數片之介電體配件431)。6根導波管 43 3其剖面形狀爲矩形狀，在蓋本體421之內部平行並列設 置，在其內部以介電構件43 4塡充。 在各導波管43 3之上部升降自如被插入置可動部43 5， 在可動部43 5之上面，設置有昇機構降43 6。升降機構436 藉由使可動部43 5升降移動，依此任意改變導波管43 3之高 度。 在開槽天線430於各導波管433之下面設置有溝槽437( 開口）。介電體窗由形成地磚狀之39片介電體配件431所構 成。各介電體配件43 1由石英玻璃、AIN、Al2〇3、藍寶石 、SiN、陶瓷等之介電材料所形成。在各介電體配件431， 於與基板G對向之面形成有凹凸。藉由該凹凸表面波於 傳播各介電體配件43 1之表面時，可以抑止由於損失電場 能而使表面波傳播之事態。其結果，可以抑制產生安在波 ，生成均勻之電漿。 39片之介電體配件31使用鋁等之非磁性金屬體之導電 性材料被支持於形成格子狀之棵426。在樑426之下面安裝 有多數之支持體427。支持體427在氣體管線428之兩端支 持氣體管線428，依此所有42根氣體管線428均等懸掛於頂 棚面全體。氣體管線428由鋁等之介電體所形成。 -27- 200901814 氣體供給源443由多數閥V、多數質量流量控制器 MFC、氬（Ar)氣體供給源443 a、矽烷（SiH4)氣體供給源 443b、氨（NH3)氣體供給源443 c，及三甲矽烷（（CH3)3SiH :3 MS)氣體供給源443 d所構成。氣體供給源443藉由各控 制各閥V之開關及各質量流量控制器M F C之開度，將所 欲濃度之氣體供給至處理容器410之內部。 在貫通樑426之氣體導入管429a經第1流路442a連接 有氬氣體供給源443a。同樣在貫通樑426之氣體導入管29b ，經第2流路442b連接有矽烷供給源44 3 d、氨氣體供給源 443c及三甲基矽烷氣體供給源443 d。依此，經氣體導入 管429a氬氣體（第1氣體之一例）橫向被供給至各介電體配 件43 1和各氣體管線428，將矽烷氣體、氨氣體及三甲基矽 烷氣體之混合氣體（第25氣體之一例）吹出至較氬氣體之供 給位置下方之位置。 在冷卻水配管444循環自冷卻水供給源445所供給之冷 卻水，依此蓋本體42 1被保持所欲之溫度。藉由以上所說 明之構成，自微波產生器所輸出之微波經各導波管433及 導槽437透過各介電體配件431，射入至處理室U內，藉 由微波之電場能，首先被供給至上段之氬氣體被電漿化。 氬氣體電漿著火後，矽烷氣體、氨及三甲基矽烷氣體之混 合氣體，藉由消耗使氬氣體之電漿化之某程度的能量而被 减弱之微波之電場能而被電漿化，藉由其電漿，在第5圖 (f)所示之金屬電極520上形成由含有碳（C)成分之氫氧化矽 膜（H : SiCxNy膜）所構成之應力緩和膜5 3 0。並且，應力 -28- 200901814 緩和膜530之碳成分含有量依據三甲基砍院氣體之流量決 定。 如此一來，於形成應力緩和膜530之後，關閉三甲基 矽烷氣體供給源443 d之閥V ’自上段供給氬氣體’自下 段供給矽烷氣體及氨氣體。依此，如第5圖（g)所示般，在 應力緩和膜530上形成由不含有碳（C)成分之氫氧化氮矽（H :S i N X)膜所構成之阻障膜5 4 0。 如以上所述般，若藉由本實施形態及其變形例時，可 以藉由一邊保持膜之密封性，一邊降低膜之內部應力之密 封膜，有效果保護元件。 並且，本實施形態所涉及之不含碳成分之阻障膜爲實 質上不含有碳成分之密封膜，例如即使存在於處理室內之 碳（有機物）以顆粒附著於阻障膜之時，實質上也不會喪失 當作實不含碳成分之密封膜的阻障膜之功能。 基板G之尺寸即使爲730mmx920mm以上亦可，例如 730mmx920mm(腔室內之直徑：1000MMxll90mm)之 G4.5 基板尺寸’或ll〇〇mmxl 300mm(腔室內之直徑：1470mmx 1590mm)之 G5基板尺寸亦可。再者，形成兀件之被處理 體並不限定於上述尺寸之基板G，例如即使爲200mm或 300mm之砂晶圓亦可。 在上述實施形態中，各部動作互相關聯，可以一面考 慮互相之關聯，一面置換一連串之動作。然後，藉由如此 置換，可以將上述電子裝置之實施形態設爲上述電子裝置 之製造方法之實施形態。 -29- 200901814 以上’雖然一面參照附件圖面一面針對本發明之最佳 實施形態予以說明’但是本發明並不限定於該些例。若爲 該項技藝者只要在不脫離在申請專利範圍所記載之範疇內 ，亦可作各種變更例或修正例，針對該些當然也屬於本發 明之技術範圍。 例如’本發明所涉及之密封膜之構造體並不限於有機 EL元件’例如亦可以當作成膜材料主要使用液體之有機 金屬’藉由在被加熱至500〜700°C之被處理體上分解氣化 之成膜材料，密封藉由使在被處理體上生長薄膜之 MOCVD(Metal Chemical Vapor Deposition:有機金屬氣相 生長法）所形成之有機金屬元件之密封膜使用。並且，本 發明所涉及之密封膜之構造體亦可以用於密封有機電晶體 、有機FET(Field Effect Transistor)、有機太陽電池等之 有機元件，或液晶顯示器之驅動系統所使用之薄膜晶體 (TFT)之元件。 再者，使用本發明所涉及之密封膜之構造體而當作密 封元件之電子裝置，可舉出有機發光二極體或薄膜電晶體 (TFT)。 再者，作爲使用本發明所涉及之密封膜之構造體而製 造密封元件之電子裝置，雖然爲上述具有多數溝槽之平面 天線之微波電漿處理裝置（具有多數片之介電體配件之微 波電漿處理裝置及RLSA形微波處理裝置）亦可，但是並 不限定於此，可以使用電容耦合型之平行平板型電漿處理 裝置、誘導結合型（ICP : Inductive Coupling Plasma)電漿處 -30- 200901814 理裝置、電子迴旋方式（ECR: Electron Cyclotron Resonance) 之電漿處理裝置等各種之電漿處理裝置。 【圖式簡單說明】 第1圖爲本發明之一實施形態所涉及之基板處理裝置 之槪略構成圖。 第2圖爲施予同實施形態所涉及之6層連續成膜處理之 製程模組PM1之縱剖面圖。 第3圖爲用以說明藉由同實施形態所涉及之6層連續成 膜處理所形成之膜之圖式。 第4圖爲施予同實施形態所涉及之CVD處理之製程模 組PM3之縱剖面圖。 第5圖爲用以說明同實施形態所涉及之有機EL元件 製造製程之圖式。 第6圖爲表示對三甲基矽烷（Trimethyl silane)氣體之流 量的膜組成及膜應力之關係的實驗結果。 第7圖爲表示三甲基矽烷氣體之流量和膜應力之關係 的曲線圖。 第8圖（a)爲疊層各一層應力緩和膜和阻障膜之圖式， 第8圖（b)爲表示各疊層兩層應力緩和膜和阻障膜之圖式。 第9圖爲施予變形例所涉及之CVD處理之製程模組 PM3之縱剖面圖。 【主要元件符號說明】 -31 - 200901814 1 〇 :基板處理裝置 5 00 ： ΙΤΟ 5 1 0 :有機層 520 :金屬電極 5 3 0 :應力緩和膜 540 :阻障膜 G :基板 Ρ Μ 1〜Ρ Μ 4 :製程模組BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure for forming a film of an electronic device or an electronic device, a device for manufacturing the electronic device, and a structure for a film relating to the sealing member. [Prior Art] In recent years, the organic substance (EL: Electroluminescence) element which emits light using an organic compound has been used. Since the organic EL element is characterized by self-luminescence and high reaction speed, a backlight is not required, and for example, it is expected to be applied to a display unit or the like. The organic EL element is formed on a glass substrate, and the sandwich structure layer in which the organic layer is sandwiched between J) and the cathode layer (negative electrode) is weak against moisture or oxygen, and when moisture or oxygen is mixed, non-light-emitting points (dark spots) become Therefore, it is very important to shorten the organic EL element so as not to transmit external moisture or oxygen. Here, as the protective organic layer, there is no external moisture. From the conventional proposal, there is a method of using a sealed can of aluminum can or the like. <Japanese Laid-Open Patent Publication No. 2005-166265. By this, the sealed can is attached with a sealing material, and the organic EL element is sealed and dried by sealing the canister, thereby preventing the EL element from being in the machine. Manufacturing method, sealed slurry processing device, organic electroluminescent display is injected, and the anode layer of the low power consumption portable type machine (the positive electrode 'the organic characteristic change causes the life. The film sealing property is the image method, _ ( For example, a method in which the organic EL element is sealed by the formation of a sealing film on the organic EL element is proposed in the case where the organic EL element is mixed with the dry water and is incorporated in the organic EL element (for example, JP-A-2000-223264) The seal produced by the sealing film is somewhat thinner than the structure of the sealed can. The sealing film requires a film forming temperature as described above except that moisture or oxygen is not transmitted. Low, low film stress, sufficient protection of the element itself by physical impact, etc. In particular, in the case of an organic EL element, in order to deteriorate the light-emitting characteristics, it is necessary to form a film at a low temperature. Therefore, for the sealing film, by CVD (Chemical Vapor) Deposition: chemical vapor deposition film formation method) A tantalum nitride (SiN) film which can be formed at a low temperature of 100 ° C or less can be regarded as a strong force. [Problems to be Solved by the Invention] However, in order to improve the sealing property of the film, the tensile stress in the sealing film becomes stronger as the density of the film is increased. When the tensile stress becomes large, stress is applied to the film warping into a bowl. The direction of the shape causes a peeling of the sealing film or a main cause of damage in the vicinity of the interface between the element or the element and the sealing film. Here, in order to solve the above problem, the present invention provides to reduce the internal stress of the film while maintaining the sealing property of the sealing film. A method for manufacturing an electronic device and an electronic device. [Means for Solving the Problem] In order to solve the above problems, an aspect of the present invention provides an electronic device having a structure formed on a target object. Element; 200901814 A stress relieving film containing a specific amount of carbon component laminated on the above element: and a barrier film laminated on the stress relieving film and containing no carbon component, the inventors carefully studied the results, such as As shown in Fig. 6 and Fig. 7, it is found that there is a correlation between the carbon content of the film and the film stress. When the carbon (C) component is used, the internal stress in the sealing film changes. That is, the more carbon components are mixed into the sealing film, the internal stress of the film changes from the tensile stress to the compressive stress side. In the relationship, the inventors have laminated a stress relaxation film containing a specific amount of a carbon component on an element formed on a target object, and have conceived an electronic device in which a barrier film containing a carbon component is laminated on a stress relaxation film. According to this, since the stress relaxation film containing carbon between the element and the barrier film is provided, the film stress of the stress relaxation film acts as a force for relaxing the tensile stress of the barrier film, and the residual stress of the entire sealing film can be reduced. In addition to this, the barrier film is formed in the stress relieving film. Thus, the sealing property of the entire film can be maintained high. As a result, by the stress relieving film disposed between the element and the barrier film, the film stress can be reduced to prevent film peeling or breakage of the element, and the external moisture or oxygen can be prevented by the barrier film provided on the stress relieving film. Mixing into the component' can thus avoid the deterioration of the component. The result 'can keep the life of the component long. In this case, the barrier film is a hydrogenated hafnium nitride film (H:SiNx film) which does not contain a carbon component, and the stress relaxation film is a hydrogenation nitride film (H: SiCxNy film) containing a carbon component of 4 atom% or more. Also. 200901814 If the content of the carbon component is 4 atomic percent (at%) or more by the relationship between the carbon content of the film and the film stress shown in Fig. 7, the film stress of the stress relieving film becomes 〇 (Mpa). Small, becoming a compressive stress. When the film stress of the barrier film which does not contain a carbon component (that is, the carbon content is 〇%) is about 170 MPa by the seventh figure, when the film stress ratio of the stress relaxation film is less than 〇 (MPa), the stress The sum of the film stresses of the moderating film and the barrier film becomes smaller than when the barrier film is present on the element. Accordingly, the sealing property of the sealing film can be maintained high while the internal stress of the sealing film can be lowered. Further, each sealing film is mainly formed by a hydrogenated hafnium nitride film. The hydrogenated hafnium nitride film is formed by CVD (Chemical Vapor Deposition) at a low temperature of 10 ° C or lower. As a result, it is possible to avoid the change in characteristics of the element at the time of film formation. In this manner, the sealing film on the element is a two-layer structure of the stress relaxation film and the barrier film, and each sealing film is formed by the hydrogenated hafnium nitride film, whereby the characteristics of the components of the electronic device are not deteriorated. It can prevent film peeling or breakage of components, and can keep the life of components long. The above-mentioned barrier film may be a hafnium hydrogen hydride film containing no carbon component, and the stress relieving film may be a hafnium hydrogen hydride film containing 2 atom% or more and 5 atom% or less of a carbon component. When the content of the carbon component is 2 atom% or more and 5 atom% or less by the relationship between the carbon content and the film stress shown in FIG. 7, the film stress of the stress relaxation film is -50 to 50 (Mpa). Between the two. In other words, when the content of the carbon component is 2 atom% or more and 5 atom% or less, the stress relieving film functions as a film having a very small film stress. Accordingly, according to the configuration of 200901814, a stress relaxation film having a very small film stress is interposed between the element and the barrier film. As a result, the tensile stress of the barrier film acts directly on the element by acting as a very small stress relieving film of the film stress of the protective element, whereby the damage of the element or the peeling of the film can be avoided. The barrier film and the stress relaxation film may be laminated on the element in a plurality of layers. In this case, it is preferred that the barrier film and the stress relieving film are alternately laminated on the element. Further, it is preferable that the stress relaxation film is formed on the innermost layer to form the barrier film on the outermost layer. As shown in Fig. 8(a), the inside of the sealing film is the largest at the interface between the barrier film and the stress relieving film. Accordingly, the sealing film is most deformed at the interface between the barrier film and the stress relieving film. Further, the deformation becomes larger as the thickness of each sealing film becomes thicker. However, by such a configuration, the barrier film and the stress relieving film are laminated on most of the layers (optimally interactive) on the element. Accordingly, the thickness of each of the sealing layer films of each layer can be thinned. As a result, as shown in Fig. 8(b), by reducing the magnitude of the crotch stress generated in the interface between the barrier film and the stress relaxation film, the distribution of the internal stress of the entire sealing film is made uniform, thereby Reduce the deformation inside the sealing film. Accordingly, the risk of peeling of the film or breakage of the element can be further reduced. Even if a stress relaxation film is formed on the innermost layer, a barrier film may be formed on the outermost layer. As a result, the sealing property of the entire sealing film can be improved by the barrier film located at the outermost layer, and the risk of film peeling or breakage of the element can be reduced by the stress relaxation film located at the innermost layer. The barrier film and the stress relaxation film may be laminated on the element even if the stress relaxation film is sandwiched between the barrier films. According to this, 200901814', a three-layer sealing film is formed on the element in the order of the barrier film, the stress relaxation film, and the barrier film. According to this, the sealing property of the film can be improved, and the influence on the component from the outside can be further reduced. The carbon content and thickness of the stress relaxation film and the thickness of the barrier film become 100 MPa even if the internal stress of the entire sealing film is caused by the film stress of the barrier film and the film stress of the stress relaxation film. It is also possible to determine the carbon content and thickness of the stress relaxation film and the thickness of the barrier film by the film stress of the barrier film and the film stress of the stress relaxation film. It is preferable that the absolute 値 of the internal stress is 50 MPa or less. Further, it is preferable that the total thickness of the barrier film and the stress relieving film is 5 // m or less. By this, the absolute enthalpy of the internal stress of the entire sealing film caused by the film stress of the barrier film and the film stress of the stress relieving film becomes 100 MPa (preferably 50 MPa) or less. Accordingly, the internal stress of the entire sealing film can be reduced, and the risk of peeling of the film or breakage of the element can be reduced. The above electronic device may be any of an organic light emitting diode or a thin film transistor. According to this, an organic light-emitting diode or a thin film transistor (TFT: Thin Film Transistor) having an element sealed by the sealing film of the above two-layer structure is manufactured. Accordingly, for example, in order to drive an organic display or a liquid crystal display, it is possible to effectively protect each element formed in a matrix shape from external moisture or the like. In particular, the organic EL element has a property of being weak to moisture. According to this, it is possible to reduce the risk of film peeling or destruction of the element by mitigating the film stress generated in the barrier film by the stress relieving film while avoiding the incorporation of moisture in the atmosphere into the element by the barrier film. . -9- 200901814 Further, in order to solve the above problems, according to another aspect of the present invention, there is provided a method of manufacturing an electronic device in which a stress containing a specific amount of carbon component is laminated on an element formed on a target object The relaxation film is formed by laminating a barrier film containing no carbon component on the stress relaxation film. In addition, in order to solve the above-mentioned problems, a structure of a sealing film is provided, which is a structure for sealing a sealing film of an element formed on a target object, and is laminated on the above-mentioned element. A stress relaxation film containing a specific amount of a carbon component, and a barrier film laminated on the stress relaxation film and containing no carbon component. Further, in order to solve the above problems, according to another aspect of the invention, there is provided a manufacturing apparatus for laminating a stress relaxation film containing a specific amount of a carbon component on an element formed on a target object, An electronic device is manufactured by laminating a method of manufacturing an electronic device in which a barrier film containing no carbon component is laminated on a film. Further, in order to solve the above problems, according to another aspect of the present invention, a plasma processing apparatus is provided which generates plasma from a gas supplied into a processing container, and processes the object to be processed by the generated plasma. a mounting table on which the object to be processed is formed, and a gas supply source for supplying a gas to the processing container, wherein the gas supply source supplies a first gas containing a carbon component, and generates a plasma from the supplied first gas. After the generated plasma is laminated on the element placed on the object to be processed on the object to be processed, a second layer of the gas containing no carbon component is supplied from the gas supply source, and then the second gas containing no carbon component is supplied from the gas supply source. A plasma is generated from the supplied second gas, and a 10-200901814 barrier film containing no carbon component is laminated on the stress relaxation film by the generated plasma. By this, by the barrier film preventing external moisture or oxygen from being mixed into the elementary crucible, it is possible to avoid the deterioration of the element while reducing the film stress by the stress relieving film disposed between the element and the barrier film. 'This can reduce the risk of film peeling or damage to components. Further, in order to solve the above problems, according to another aspect of the present invention, an electronic device having an element formed on a target object and laminated on the element and containing a specific amount of carbon component is relieved. membrane. In this case, the stress relaxation film may be a hydrogenated hafnium nitride film containing 2 atom% or more and 5 atom% or less of a carbon component. As described above, when the content of the carbon component is 2 atom% or more and 5 atom% or less, the stress relieving film functions as a film having a very small film stress. According to this, by such a configuration, by using the stress relaxation film protecting member having a very small film stress, film peeling or breakage of the element can be prevented, and the element can be effectively protected by, for example, increasing the thickness of the stress relieving film. . [Effects of the Invention] As described above, according to the present invention, it is possible to protect the element by reducing the internal stress (residual stress) of the film while maintaining the sealing property of the film. [Embodiment] An embodiment of the present invention will be described in detail below with reference to the attached drawings -11 - 200901814. In the following description and the attached drawings, the same reference numerals are given to the components having the same configurations and functions, and the description thereof will not be repeated. Further, in the present specification, lmTorr is (10·3 X 1 0 1 325/760) Pa, lsccm (lCT6/60) m3/sec 〇 First, in the substrate processing apparatus 10 according to an embodiment of the present invention, The first embodiment will be described with reference to the first embodiment. Further, in the present embodiment, the construction of the organic EL element by the substrate processing is also described, and the construction of the organic EL element by the sealing film is also described. The substrate processing apparatus 10 according to the present embodiment is a cluster type manufacturing apparatus having a plurality of processing containers, and includes a mounting lock chamber LLM, a transfer chamber TM (Transfer Module), an upper processing chamber CM, and four process modules PM ( Process Module) l ~ PM4. The mounting lock chamber LLM is a vacuum transfer chamber in which the glass substrate (hereinafter referred to as "substrate") G transported from the atmospheric system is placed in the transfer chamber TM under reduced pressure, and the inside is maintained in a reduced pressure state. Further, on the substrate G that has been carried into the lock chamber LLM from the atmospheric system, indium tin oxide (ITO: Indium Tin Oxide) is formed in advance as an anode layer. In the transfer chamber TM, a telescopic and rotating articulated arm Arm is provided inside. The substrate G is first transported from the load lock chamber Um to the pretreatment chamber cm using the transfer arm Arm, and then transported to the process module pml, and transported to the other process modules PM2 to PM4. In the upper processing chamber CM, -12-200901814 contaminants (mainly organic substances) adhering to the surface of the IT0 formed on the anode layer of the substrate G are removed. In the four process modules PM1 to PM4, first, in the process module PM, six organic films are continuously formed on the ITO surface of the substrate by vaporizing ammonium. Next, the substrate G is transported to the process module PM4. In the process module PM4, a metal electrode is formed by sputtering on the organic layer of the substrate G. Next, the substrate G is transported to the process module PM2, and a portion of the organic film is removed by etching in the process module PM2. Then, the substrate G is again transported to the process film group PM4, and the side portion of the metal electrode is formed by sputtering on the process module PM4, and finally transferred to the process module PM3, and a sealing film is formed by the CVD in the process module PM3. In the following, the internal structure (Fig. 2) of the process module PM1 4 for forming an organic film by vapor deposition will be described, and then the internal structure of the process module PM3 for forming a sealing mold by CVD will be described (Fig. 4). Further, since the process modules PM2 and PM4 for performing etching and sputtering are generally an etching apparatus and a sputtering apparatus, the description of the internal configuration thereof will be omitted. (Processing Module PM1: Film Formation Process of Organic Film) As shown in Fig. 2, the process module PM1 has a first processing container 1A and a second processing container 200, and the first processing container 1 is provided. In the crucible, a 6-layer organic film is formed continuously. The first processing container 100 has a rectangular parallelepiped shape, and has a slide mechanism 110, six blowing mechanisms 120a to 12 Of, and seven partition walls 130 therein. A gate valve that can carry in and out the substrate G is provided on the side wall of the first processing container 1A. 140 ° -13 - 200901814 The sliding mechanism 1 10 has a platform 1 10a, a support 1 10b, and a sliding mechanism 110c. The stage 11a is supported by the support 110b, and the substrate g carried in from the gate valve 140 is electrostatically adsorbed by a high voltage applied from a high voltage power supply (not shown). The sliding mechanism is attached to the ceiling portion of the first processing container 100, and is grounded, so that the substrate G and the stage 110a and the supporting body 110b slide toward the longitudinal direction of the processing container 100 at the same time. Accordingly, the substrate is placed in each of the blowing mechanisms. A little more than 120 moves in parallel. The six blowing mechanisms 120a to 120f are all the same in shape and configuration, and are arranged at equal intervals in parallel with each other. The blowing mechanisms 120a to 120f have a hollow rectangular shape inside, and blow out organic molecules from an opening provided at the center of the upper portion thereof. The lower portions of the blowing mechanisms 120a to 120f penetrate the connecting pipes 150a to 150f that are connected to the bottom walls of the first processing container 100. A partition wall 130 is provided between each of the blowing mechanisms 120. The partition wall 130 prevents the organic molecules blown from the openings of the respective blowing mechanisms 120 from being mixed into the organic molecules blown from the blowing mechanisms 120 at the adjacent sides by dividing the respective blowing mechanisms 120. Six vapor deposition sources 210a to 210f having the same shape and structure are housed in the second processing container 200. The vapor deposition sources 210a to 210f store the organic materials in the storage portions 210a1 to 210f, and vaporize the respective organic materials by setting the storage portions to a high temperature of about 200 to 500 °C. Moreover, gasification not only converts a liquid into a gas, but also a phenomenon in which a solid directly turns into a gas without a liquid state (so-called sublimation). The vapor deposition sources 210a to 210f are connected to the connection pipes 150a to 15f in the upper portion thereof. The organic molecules vaporized by the respective vapor deposition sources 210 are kept at a high temperature by the respective connection tubes 14-200901814 150, and are not attached to the respective connection tubes 15A, and are discharged from the openings of the respective blowing mechanisms 120 through the respective connection tubes 150 to The inside of the first processing container 100. Further, in order to maintain the inside of the second processing container 200, the second processing container 200 is decompressed to a desired degree of vacuum by an exhaust mechanism without a pattern. Valves 220a to 220f are attached to each of the connection pipes 150, and when the valves 2200 are closed, the space in the vapor deposition source 210 of each organic material and the internal space of the first processing container are blocked. When each valve 2 2 0 is opened, the two spaces are connected. In the present embodiment, each of the valves 220 is released into the bulk, but may be provided in the second processing container 200. Among the organic molecules blown out from the respective blowing mechanisms 120, first, the organic molecules blown from the blowing mechanism 120a adhere to the ITO (anode) on the substrate G above the blowing mechanism 120a at a certain speed, and as shown in FIG. In general, the first G-holes were formed on the substrate G. Then, 'when the substrate G is sequentially moved from the blowing mechanism 120b to the blowing mechanism 120f, the organic molecules blown out from the respective blowing mechanisms 1 2 0 b to 1 2 0 f are deposited on the substrate G' in this order to form an organic layer (2nd) Layer ~ layer 6). In this way, the organic layer shown in FIG. 5(b) is formed on the ITO (anode) 500 of the substrate G shown in FIG. 5(a) in the fifth drawing of each of the processes of the organic EL process. 510. (Processing Module PM4: Film Formation Process of Metal Electrode) Next, the substrate G is transported into the process film group PM4. In the process membrane group PM4, the gas generated from the gas generated in the processing vessel is caused by the ions in the generated plasma collide with the target (sputtering), and the target atom Ag flies out from the target. The flying target atom Ag is stacked on the organic layer 510 through the pattern mask. According to this, the metal electrode (cathode) of 7K in Fig. 5(a) is formed at 520 ° (process module ρ Μ 2: etching treatment of organic film). Then, the substrate G is transported to the process module ΡΜ 2 'self-supply The gas is generated in the gas in the container, and the metal electrode 520 is masked by the generated plasma to remove the organic layer (dry etching) which is laminated on the organic layer under the metal electrode 520. According to this, as shown in Fig. 5(d), only the organic layer located under the metal electrode 520 remains on the substrate G. (Processing Module PM3: Film Forming Process of Sealing Film) Next, the substrate G is transported to the process module PM3, and the RLSA (Radil Line Slot Antenna) plasma CVD apparatus schematically showing the longitudinal section thereof in Fig. 4 is Film formation treatment. The RLSA electric paddle CVD apparatus has a cylindrical processing container 300 having a ceiling surface open. A shower plate 305 is embedded in the opening of the ceiling surface. The processing container 300 and the shower plate 305 are sealed by a 0-ring disposed between the stepped portion of the inner wall of the processing container 300 and the outer peripheral portion of the lower surface of the shower plate 305, whereby the application is performed. Plasma treatment chamber U. For example, the processing container 300 is made of a metal such as aluminum, and the shower plate 305 is made of a metal such as aluminum or a dielectric dielectric, and is electrically grounded. A carrier (mounting stage) 315 on which the wafer W is placed is provided on the bottom of the processing container 300 via the insulator 320. A high frequency power source 25b is connected to the carrier 315 via the integrator 325a, and a specific bias voltage is applied to the inside of the processing container 300 by the high frequency power output from the high frequency power source 325b. Further, on the carrier -16-200901814 3 15, a high-voltage DC power supply 3 3 0b ' is connected via the coil 3 3 0a' to electrostatically adsorb the substrate G by a DC voltage output from the high-voltage DC power source 330b. Further, in order to cool the wafer W inside the carrier 315, a cooling jacket 353 for supplying cooling water is provided. The shower plate 305 is covered by a cover panel 340 at its upper portion. A radial slot antenna 34 5 is disposed above the cover panel 3 40. The radial slot antenna 345 is a fluted plate 345a disposed on a disk forming a plurality of non-patterned grooves, an antenna body 345b on a disk holding the fluted plate 345, and is disposed on the fluted plate Between 3 45 a and the antenna body 345b, a retardation plate 345 formed of a dielectric such as alumina (Al 2 〇 3) is formed. A microwave generator 355 is externally disposed on the radial slot antenna 345 via the coaxial waveguide 520. A vacuum pump (not shown) is installed in the processing container 300, and the processing chamber U is depressurized to a desired degree of vacuum by discharging the gas in the processing container 300 through the gas discharge pipe 3 60. The gas supply source 3 65 is composed of a plurality of mass flow controllers MFC, an ammonia (NH3) gas supply source 365a, an argon (Ar) gas supply source 365b, a sand chamber (SiH4) gas supply source 3 65 c, and trimethyl decane ((CH3) 3SiH; 3MS) Gas supply source 3 65d. The gas supply source 3 65 supplies a desired concentration of gas to the inside of the processing container 300 by controlling the opening of each valve V and the opening of each mass flow controller MFC. In this way, the ammonia gas and the argon gas (an example of the first gas) are supplied to the upper side of the processing chamber U through the gas introduction pipe 375 penetrating the shower plate 305 through the first flow path 370a, and the argon gas, the decane gas, and the top three The decane gas (an example of the second gas) passes through the second flow path 370b, and is supplied from the integrated gas pipe 380 to -17-200901814 to below the first gas. According to this configuration, the plasma is generated from the various gases by the microwaves generated by the microwave generators 3 3 5 through the grooves and the shower plates 350, and the generated electricity is generated by the generated electricity. The slurry forms a stress relieving film 530 composed of a yttrium aluminum hydroxide (H: SiCxNy) film containing a carbon (C) component. After the stress relaxation film 530 is formed, the valve V of the trimethyl gas supply source 3 65d is closed, the argon gas and the ammonia gas are supplied from the upper stage, and the argon gas and the decane gas are supplied from the lower stage. According to this, as shown in FIG. 5(g), a barrier film 540 〇 (structure of a sealing film) formed of a yttrium aluminum hydroxide (H:SiNx) film containing no carbon (C) component is formed. As described above, in the organic EL device process according to the present embodiment, after the organic layer and the metal electrode are formed (Fig. 5(a) to Fig. 5(e)), the oxynitride containing the carbon component is formed. The ruthenium film (stress relaxation film 530) (Fig. 5(f)) also forms a ruthenium oxyhydroxide film (barrier film 540) containing no carbon component (Fig. 5(g)). As a result, the inventors have found that in the present embodiment in which the organic element is sealed by two types of sealing films, there is a great advantage in that the organic element is sealed only by the tantalum oxyhydroxide film containing no carbon component. Next, the advantages of the two-layered sealing film composed of the stress relieving film and the barrier film, and the conventional problems will be described. Generally, the sealing film of the component on the sealing substrate is required to (1) sufficiently protect the component from the physical impact, (2) the film forming temperature is low, (3) the moisture or oxygen is not transmitted, and (4) the film stress is low. In particular, in the case of an organic EL device, it is necessary to form a sealing film at a low temperature in order to prevent deterioration of light-emitting characteristics for -18-200901814. Further, since "the moisture in the atmosphere deteriorates the organic EL element" and causes one of the non-light-emitting points (dark spots), it is very important to improve the sealing property of the film so as not to allow moisture to pass therethrough. However, in order to improve the sealing property of the film, the density of the film is increased. The tensile stress in the sealing film is increased. The force is applied to the direction in which the film is warped into a bowl shape. Therefore, when the density of the sealing film is increased to improve the sealing property of the film, "the peeling of the sealing film or the destruction near the interface between the element and the sealing film" becomes a factor for shortening the life of the element. In response to this problem, the inventors investigated the structure of the sealing film which reduced the residual stress of the film while maintaining the sealing property of the sealing film by the following experiment. As a process condition, the inventors controlled the microwave output from the microwave generator 355 of the RLSA plasma CVD apparatus to 2. 5kW. Further, the inventors set the pressure in the treatment chamber to 2 6 · 6 P a ' to set the gap between the ceiling surface and the carrier 15 to 90 mm. Further, the inventors supplied argon gas and ammonia gas from the upper stage, and set the flow rates to llSOsccm and 113 SCCm, and supplied argon gas, decane, and trimethyl decane gas from the lower stage, and set the flow rates to 50 seem, 18, respectively. ~16sccm, 0~2sccm. The flow rate of the decane gas and the trimethyl decane gas has a width because the flow rate of each gas is varied in such a manner that the total synthesis of decane gas and trimethyl decane gas is 18SCCH1. Further, the inventors controlled the temperature of the carrier at 70 ° C, electrostatically adsorbed the substrate G, and cooled the helium (He) gas of 5 Torr, and set the temperature in the processing chamber to 45 t. In this state, a hydrogenated nitriding sand film is formed on the substrate G while changing the flow rate of the trimethyl decane gas to 0 to 2 sccm. The inventors applied a film formed on the substrate of -19-200901814, measured the amount of warpage of the attached film by a film evaluation device, and determined the internal stress of the film from the measured amount of warpage. Fig. 6 and Fig. 7 show the relationship between the ratio of the film composition to the flow rate of trimethyl decane gas (3 MS) obtained by the result and the film stress. Accordingly, the internal stress of the sealing film is changed by mixing a specific amount of carbon (C) into the bismuth (Si), nitrogen (N), and hydrogen (H) components forming the sealing film. That is, as shown in Fig. 6 and Fig. 7, the inventors investigated that the more the carbon component mixed into the sealing film, the more difficult the internal stress of the film to change from the tensile stress side to the compressive stress side. Using the relationship, the inventors have thought of laminating a stress relieving film (for example, a lanthanum carbon hydride containing film: H: SiCxNy film) containing a specific amount of a carbon component on an organic EL element, and stacking it on a stress relaxation film. A structure of a sealing film containing a barrier film of a carbon component (for example, a hydrogenated hafnium nitride film: H: SiNx film). Accordingly, the stress relaxation film provided between the element and the barrier film acts as a film stress that retards the barrier film. For example, when the stress relaxation film is a hydrogenated hafnium nitride film containing a carbon component of 4 atom% or more as shown in Fig. 7, the film stress of the stress relaxation film is considered to be smaller than 〇 (Mpa). According to Fig. 7, the film stress of the barrier film which does not contain the carbon component (that is, the content of the carbon component is 〇%) is about 170 MPa, so when the film stress of the stress relieving film is less than O (Mpa) The residual stress of the entire film is smaller than when the angular barrier film is present on the element. In addition, by such a configuration, a barrier film is formed on the stress relaxation film. According to this, the sealing property of the film can be kept high. As a result, the film is peeled off or the element is broken by the stress relieving film provided between the organic EL element and the barrier film, and the external moisture or oxygen is prevented from being mixed by the barrier film provided on the outermost layer. On the component side, the deterioration of the organic EL element can be avoided. In other words, by using the sealing film on the element as the two-layer structure of the stress relieving film and the barrier film, it is possible to prevent the film from remaining while maintaining the high film sealing property. In this way, the inventors have found that the two-layer structure of the above-mentioned sealing film can prevent deterioration of the characteristics of the organic EL element, prevent peeling of the film or breakage of the element, and can maintain the life of the organic EL element. The method of the polar body. Further, the inventors have proposed an embodiment in which the structure of such a sealing film is optimized in the following four examples. (Example 1 of the sealing film: The carbon content is controlled so that the film stress of the stress relieving film becomes a specific enthalpy or less) First, the inventors conceived that carbon is controlled in such a manner that the film stress of the stress relieving film 530 becomes a specific enthalpy or less. The content rate is the first example of optimizing the structure of the sealing film. When the content of the carbon component is 2 atom% or more and 5 atom% or less by the relationship between the carbon content and the film stress shown in Fig. 7, the absolute enthalpy of the film stress of the stress relaxation film 530 becomes 50 ( Mpa) Hereinafter, the stress relieving film 53 0 functions as a film having a very small film stress. According to this, the inventor controlled the flow rate of trimethyl decane gas to 0. The stress relaxation film of the carbon component is formed on the metal electrode 520 at a concentration of 2 atomic percent or more and 5 atomic percent or less by 5 sccm to about 1 sccm, so that the film stress is less than the absolute 値5 〇 Mpa. -21 - 200901814 The stress relieving film is interposed between the metal electrode 520 and the barrier film 540, and the tensile stress of the barrier film 540 can be prevented from directly acting on the metal electrode 520. At the same time, by optimizing the thickness of the stress relieving film 530 to, for example, 50 nm or less, the stress relieving film 530 functions as a buffer for protecting the metal electrode 520. (Structural force 2 of the sealing film: The carbon content and the film thickness are controlled so that the total synthesis of the film stress is equal to or less than the specific enthalpy.) Further, the inventors proposed that the total synthesis of the film stress of the entire sealing film be a specific enthalpy or less. The content of carbon and the thickness of each film are controlled in a manner similar to "〇", for example, as a second example in which the structure of the sealing film is optimized. Specifically, as shown in Fig. 7, when the flow rate of the trimethyl decane gas is 2 SCCm, a film-containing carbon ytterbium hydroxide film of -130 MPa is formed. The inventors have used this to form a stress relaxation film of 280 mm as shown in Fig. 8 (a), and a barrier film of 200 mm is formed thereon, whereby the film stress of the entire sealing film can be made (= (-1 3 0 X 2 8 0) + (1 7 0 X 2 2 0) is close to "0". As a result, the residual stress of the entire film becomes very small by the control state content ratio and the film thickness of each sealing film. While maintaining the sealing property of the film by the barrier film 540, the risk of film peeling or breakage of the element is reduced by the stress relieving film 530. At this time, the inventors found the self-blocking film 540 in order to avoid film peeling. It is preferable that the absolute value of the residual stress of the seal due to the film stress of the film stress and the stress relieving film 530 becomes l 〇〇 Mpa or less (more preferably 50 MPa), and the carbon content and the film thickness are preferably determined. Further, it is preferable that the total thickness of the stress relaxation film 5 3 0 -22- 200901814 and the barrier film 540 is 5/zm or less. As a result, the film can be sealed by the film 540 while maintaining the sealing property of the film. The risk of film peeling or breakage of the element is further reduced by the stress relieving film 53 0. (Configuration Example 3 of the sealing film In order to make the distribution of the internal stress of the film uniform, many of the films are laminated. In addition, the inventors have derived a method of laminating a plurality of layers of the sealing film so that the internal stress of the entire sealing film becomes uniform. A third example in which the structure of the sealing film is optimized. When the structural example 2 of the sealing film is used, the left side of the film is shown as the distribution of the film stress inside the sealing film as shown in the left side of Fig. 8(a). The stress becomes maximum at the interface between the stress relaxation film 530 and the barrier film 540. That is, it is known that the sealing film has the most deformation at the interface between the stress relaxation film 530 and the barrier film 540. This deformation is likely to become film peeling or Here, in order to achieve uniformization of the internal stress of the sealing film, the inventors proposed a plurality of laminated stress relaxation films 530 and a barrier film 540 on the metal electrode 520. In this case, as shown in Fig. 8 (Fig. 8) b) The stress relaxation film 530 and the barrier film 540 are alternately laminated on the metal electrode 520. Further, the stress relaxation film 530 is formed on the innermost layer, and the barrier film 540 is formed on the outermost layer. As above, should The relaxation film 530 and the barrier film 540 are deformed most at the interfaces. Then, the deformation is such that the thickness of each layer is thicker. However, when the structure of the sealing film shown in the example is right, the stress relaxation film 5 3 0 The barrier film 540 is laminated on the metal electrode 520 in a plurality of layers (preferably a plurality of layers). Accordingly, the film thickness of each layer can be made thin. For example, as shown in FIG. 8-23-200901814 (b) As shown in the figure, when the two layers of the stress relaxation film 530 and the barrier film 504 are laminated, the internal stress generated at the interface between the stress relaxation film 530 and the barrier film 504 is compared with each other. When the first layer of the stress relaxation film 530 and the barrier film 540 are laminated, it is half as shown in Fig. 8(a). As a result, by making the internal stress distribution of the entire sealing film more uniform, the deformation occurring at the interface between the stress relieving film 530 and the barrier film 540 can be reduced. As a result, the risk of film peeling or breakage of the element can be further reduced. Further, the stress relaxation film 530 is formed in the innermost layer, and the barrier film 504 is formed on the outermost layer. Thus, the sealing property of the entire film can be kept high, and the risk of film peeling or component breakage can be reduced. (Example 4 of the sealing film: the film thickness is suppressed so as to suppress the content of the carbon (impurity) as much as possible.) The inventors have also devised to suppress the content of carbon (impurity) of the stress relieving film 530 as much as possible. A method of controlling the film thickness as a fourth example for optimizing the structure of the sealing film. When specified, 'the flow rate of trimethyl decane gas is set to 〇 as shown in Figure 7. When 5 to 1 seem, a film of lanthanum oxycarbonate containing a film stress of 50 to 50 MPa is formed. With this, the inventors formed a stress relaxation film 530 of 50 OMPa or less to form 25 mm, and formed a barrier film 540 of 205 mm thereon, thereby suppressing the incorporation into the stress relieving film 5 3 as much as possible. The amount of carbon (impurities) of 0 is controlled. As a result, the amount of carbon (impurities) is suppressed as much as possible, and the sealing property is improved. Further, by laminating the barrier film 540, the sealing property of the film is kept high, and the risk of peeling of the film or breakage of the element is minimized. Further, a three-layer sealing film may be formed in the order of the barrier film and the stress relieving film '24-200901814 barrier film even on the element. As a result, the sealing property of the film can be further improved by sandwiching the two barrier layers of the stress relieving film. As a result, the influence on the device from the outside can be further reduced. As described above, the inventors carefully studied the results and derived the correlation between the carbon component contained in the film and the inside of the film. The inventors have used the correlation relationship to form a stress relaxation film 530 having a specific amount of carbon component on a substrate, and successfully developed a barrier film 540 containing no carbon component on the stress relaxation film 530. Electronic device. The electronic device device has a film mitigation film 305 that is disposed between the element and the barrier film 504 to prevent film peeling or breakage of the element, and can be formed by the stress relaxation film 530. The barrier film 504 has the advantage of maintaining a high sealing property of the sealing film. In particular, the inventors found that the sealing film of the multilayer structure disclosed in the present embodiment is very effective for the sealing film for an organic EL element in which the light-emitting characteristics of the element are significantly lowered by the external moisture or oxygen. (Modification) Next, a modification of the present invention will be described. In the present modification, only the stress relieving film 530 is laminated on the metal electrode 520, and the barrier film 540 is not laminated on the stress relieving film 530. At this time, the stress relieving film 530 is preferably cerium hydride containing 2 to 10 atom% of a carbon component or less. When the content of the carbon component is 2 atom% or more and 5 atom% or less, the absolute enthalpy of the film stress of the stress relieving film 530 becomes 50 (Mpa) or less, and the stress relieving film 530 is regarded as the film stress. Very small membrane to play -25-200901814 function. According to this, by such a configuration, by protecting the element with the stress relieving film 530 having a very small film stress, it is possible to prevent film peeling or breakage of the element, and to optimize the thickness of the stress relieving film 530. The sealing element can be effective. (Modification of CVD apparatus for forming a sealing film) In the film forming process of the sealing film, a plasma CVD apparatus provided with a dielectric window formed of a plurality of dielectric member fittings forming a tile shape can be used instead of The above RLSA plasma CVD apparatus. Hereinafter, the internal configuration of the electric paddle CVD apparatus according to the modification will be briefly described with reference to Fig. 9 . The plasma CVD apparatus according to the modification has a processing container 410, and a carrier 441 (mounting stage) for mounting the substrate G is provided inside. A power supply unit 411a and a heater 411b are provided inside the carrier 411. The power supply unit 411a is connected to the high-frequency power source 41 2b via the integrator 41 2a, and a specific bias voltage is applied to the inside of the processing container 300 by the high-frequency power output from the high-frequency power source 412b, and via the coil 4 1 3 a The high voltage direct current power source 413b is connected, and the substrate G is electrostatically adsorbed by the direct current voltage output from the high voltage direct current power source 413b. An AC power source 414 is connected to the heater 411b, and the substrate g is maintained at a specific temperature by an AC voltage output from the AC power source 44. The bottom surface of the processing container 410 is opened in a cylindrical shape, and is sealed by the bellows 415 and the elevating plate 416. The carrier 411 is lifted and lowered integrally with the lift plate 416 and the tubular shape 417, and is adjusted accordingly to the height of the process. A buffer plate 418 for adjusting the flow of the process chamber U is disposed around the carrier 411. -26- 200901814 Further, a vacuum pump (not shown) is attached to the processing container 410, and the gas in the processing container 410 is discharged through the gas discharge pipe 419, whereby the processing chamber U is depressurized to a desired degree of vacuum. The cover body 420 is provided with a cover body 421, six waveguides 43 3, a slotted antenna 430, and a dielectric window (a plurality of dielectric members 431). The six waveguides 43 have a rectangular cross-sectional shape, are arranged in parallel in the inside of the cover body 421, and are filled with a dielectric member 434 therein. A movable portion 43 5 is inserted and lowered in the upper portion of each of the waveguides 43 3 , and a lifting mechanism 43 6 is provided on the upper surface of the movable portion 43 5 . The elevating mechanism 436 arbitrarily changes the height of the waveguide 43 3 by moving the movable portion 43 5 up and down. A groove 437 (opening) is provided in the grooved antenna 430 below the respective waveguides 433. The dielectric window is composed of 39 dielectric members 431 which are formed in a tile shape. Each of the dielectric members 43 1 is formed of a dielectric material such as quartz glass, AIN, Al2〇3, sapphire, SiN, or ceramic. In each of the dielectric body fittings 431, irregularities are formed on a surface facing the substrate G. When the uneven surface wave propagates on the surface of each of the dielectric members 43 1 , it is possible to suppress the situation in which the surface waves propagate due to the loss of the electric field energy. As a result, it is possible to suppress generation of an ampoule and generate a uniform plasma. The 39-piece dielectric member 31 is supported by a conductive material of a non-magnetic metal body such as aluminum to form a grid 426. A plurality of supports 427 are mounted below the beam 426. Support 427 supports gas line 428 at both ends of gas line 428, whereby all 42 gas lines 428 are equally suspended from the entire ceiling surface. The gas line 428 is formed of a dielectric such as aluminum. -27- 200901814 The gas supply source 443 includes a plurality of valves V, a plurality of mass flow controllers MFC, an argon (Ar) gas supply source 443a, a decane (SiH4) gas supply source 443b, and an ammonia (NH3) gas supply source 443c, and A trimethyl decane ((CH3)3SiH: 3 MS) gas supply source 443d is formed. The gas supply source 443 supplies the gas of the desired concentration to the inside of the processing container 410 by controlling the opening of each of the valves V and the opening of each mass flow controller M F C . The gas introduction pipe 429a of the through-beam 426 is connected to the argon gas supply source 443a via the first flow path 442a. Similarly, the gas introduction pipe 29b of the through-beam 426 is connected to the decane supply source 44 3 d, the ammonia gas supply source 443c, and the trimethyl decane gas supply source 443d via the second flow path 442b. Accordingly, argon gas (an example of the first gas) is supplied laterally to each of the dielectric member 43 1 and each gas line 428 via the gas introduction pipe 429a, and a mixed gas of decane gas, ammonia gas, and trimethyl decane gas ( An example of the 25th gas is blown to a position below the supply position of the argon gas. The cooling water pipe 444 circulates the cooling water supplied from the cooling water supply source 445, whereby the cap body 42 1 is maintained at a desired temperature. According to the configuration described above, the microwave outputted from the microwave generator is transmitted through the respective dielectric members 431 through the waveguides 433 and the guide grooves 437, and is incident into the processing chamber U by the electric field energy of the microwave. The argon gas supplied to the upper stage is plasmad. After the argon gas plasma is ignited, the mixed gas of the decane gas, the ammonia, and the trimethyl decane gas is plasmad by the electric field energy of the microwave which is weakened by consuming a certain amount of energy for pulverizing the argon gas. A stress relaxation film 530 composed of a yttrium hydroxide film (H: SiCxNy film) containing a carbon (C) component is formed on the metal electrode 520 shown in Fig. 5(f) by the plasma. Further, the stress -28-200901814 is contained in the carbon content of the relaxation film 530 in accordance with the flow rate of the trimethyl methane gas. As a result, after the stress relaxation film 530 is formed, the valve V ′ that closes the trimethyl decane gas supply source 443 d is supplied with argon gas from the upper stage and the argon gas and the ammonia gas are supplied from the lower stage. According to this, as shown in Fig. 5(g), a barrier film 5 composed of a film of a cerium hydroxide (H:S i NX) film containing no carbon (C) component is formed on the stress relieving film 530. 0. As described above, according to the present embodiment and its modifications, it is possible to protect the element by reducing the internal stress of the film while maintaining the sealing property of the film. Further, the barrier film containing no carbon component according to the present embodiment is a sealing film that does not substantially contain a carbon component. For example, even if carbon (organic matter) existing in the processing chamber adheres to the barrier film as particles, substantially It also does not lose the function of the barrier film as a sealing film that does not contain carbon. The size of the substrate G may be 730 mm x 920 mm or more, for example, 730 mm x 920 mm (diameter of the chamber: 1000 MM x ll 90 mm) G4. 5 The size of the substrate or the size of the G5 substrate of ll〇〇mmxl 300mm (diameter in the chamber: 1470mmx 1590mm) is also acceptable. Further, the object to be processed to form the element is not limited to the substrate G of the above-described size, and for example, it may be a sand wafer of 200 mm or 300 mm. In the above embodiment, the operations of the respective units are associated with each other, and a series of operations can be replaced while considering the relationship with each other. Then, by the above replacement, the embodiment of the electronic device described above can be used as an embodiment of the method of manufacturing the electronic device. -29-200901814 The above description will be made with respect to the preferred embodiment of the present invention with reference to the attached drawings, but the present invention is not limited to the examples. It is a matter of course that the skilled person can make various modifications or modifications as long as they do not depart from the scope of the patent application, and it is of course also within the technical scope of the present invention. For example, the structure of the sealing film according to the present invention is not limited to the organic EL element 'for example, it can be used as a film-forming material mainly using a liquid organic metal' by decomposing on a treated body heated to 500 to 700 ° C. The vaporized film-forming material is sealed by a sealing film of an organometallic element formed by MOCVD (Metal Chemical Vapor Deposition) which grows a film on a substrate to be processed. Further, the structure of the sealing film according to the present invention can also be used for sealing organic elements such as an organic transistor, an organic FET (Field Effect Transistor), an organic solar cell, or a thin film crystal (TFT) used in a driving system of a liquid crystal display. ) The components. Further, an electronic device using a structure of a sealing film according to the present invention as a sealing member may be an organic light emitting diode or a thin film transistor (TFT). Further, an electronic device for manufacturing a sealing member using a structure of a sealing film according to the present invention is a microwave plasma processing apparatus (a microwave having a plurality of dielectric members) having a planar antenna having a plurality of grooves. The plasma processing apparatus and the RLSA-shaped microwave processing apparatus may be, but are not limited thereto, and a capacitively coupled parallel plate type plasma processing apparatus or an inductive coupling plasma (ICP: Inductive Coupling Plasma) may be used. - 200901814 Various plasma processing devices such as a plasma processing device for ECR: Electron Cyclotron Resonance. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic block diagram of a substrate processing apparatus according to an embodiment of the present invention. Fig. 2 is a longitudinal sectional view showing a process module PM1 which is subjected to a six-layer continuous film formation process according to the embodiment. Fig. 3 is a view for explaining a film formed by the six-layer continuous film formation process according to the embodiment. Fig. 4 is a longitudinal sectional view showing a process module PM3 to which the CVD process according to the embodiment is applied. Fig. 5 is a view for explaining the manufacturing process of the organic EL element according to the embodiment. Fig. 6 is an experimental result showing the relationship between the film composition and the film stress of the flow rate of trimethyl silane gas. Fig. 7 is a graph showing the relationship between the flow rate of trimethyl decane gas and the film stress. Fig. 8(a) is a view showing a layer of a stress relaxation film and a barrier film, and Fig. 8(b) is a view showing a two-layer stress relaxation film and a barrier film. Fig. 9 is a longitudinal sectional view showing a process module PM3 to which the CVD process according to the modification is applied. [Description of main component symbols] -31 - 200901814 1 〇: Substrate processing apparatus 5 00 : ΙΤΟ 5 1 0 : Organic layer 520 : Metal electrode 5 3 0 : Stress relieving film 540 : Barrier film G : Substrate Ρ Μ 1 ~ Ρ Μ 4 : Process Module