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WO2010030484A3 - Procédés utilisant un rayonnement hyperfréquence lors de la formation de structures semiconductrices - Google Patents

Procédés utilisant un rayonnement hyperfréquence lors de la formation de structures semiconductrices Download PDF

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Publication number
WO2010030484A3
WO2010030484A3 PCT/US2009/054475 US2009054475W WO2010030484A3 WO 2010030484 A3 WO2010030484 A3 WO 2010030484A3 US 2009054475 W US2009054475 W US 2009054475W WO 2010030484 A3 WO2010030484 A3 WO 2010030484A3
Authority
WO
WIPO (PCT)
Prior art keywords
microwave radiation
during formation
methods utilizing
radiation during
utilizing microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/054475
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English (en)
Other versions
WO2010030484A2 (fr
Inventor
John Smythe
Bhaskar Srinivasan
Ming Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to EP09813432.3A priority Critical patent/EP2324490B1/fr
Priority to CN200980135344.0A priority patent/CN102150238B/zh
Priority to KR1020117008094A priority patent/KR101222283B1/ko
Publication of WO2010030484A2 publication Critical patent/WO2010030484A2/fr
Publication of WO2010030484A3 publication Critical patent/WO2010030484A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H10D84/0133—Manufacturing common source or drain regions between multiple IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L’invention concerne, selon certains modes de réalisation, des procédés utilisant un rayonnement hyperfréquence pour activer un dopant et/ou accroître la cristallinité d’un matériau semiconducteur lors de la formation d’une structure semiconductrice. Selon certains modes de réalisation, le rayonnement hyperfréquence possède une fréquence d’environ 5,8 gigahertz, et la température de la structure semiconductrice ne dépasse pas environ 5000°C lors de l’exposition au rayonnement hyperfréquence.
PCT/US2009/054475 2008-09-11 2009-08-20 Procédés utilisant un rayonnement hyperfréquence lors de la formation de structures semiconductrices Ceased WO2010030484A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP09813432.3A EP2324490B1 (fr) 2008-09-11 2009-08-20 Procédés utilisant un rayonnement hyperfréquence lors de la formation de structures semiconductrices
CN200980135344.0A CN102150238B (zh) 2008-09-11 2009-08-20 在形成半导体构造期间利用微波辐射的方法
KR1020117008094A KR101222283B1 (ko) 2008-09-11 2009-08-20 반도체 구조들의 형성 중에 마이크로파 방사선을 사용하는 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/208,886 US7985617B2 (en) 2008-09-11 2008-09-11 Methods utilizing microwave radiation during formation of semiconductor constructions
US12/208,886 2008-09-11

Publications (2)

Publication Number Publication Date
WO2010030484A2 WO2010030484A2 (fr) 2010-03-18
WO2010030484A3 true WO2010030484A3 (fr) 2010-05-27

Family

ID=41799639

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/054475 Ceased WO2010030484A2 (fr) 2008-09-11 2009-08-20 Procédés utilisant un rayonnement hyperfréquence lors de la formation de structures semiconductrices

Country Status (6)

Country Link
US (3) US7985617B2 (fr)
EP (1) EP2324490B1 (fr)
KR (1) KR101222283B1 (fr)
CN (1) CN102150238B (fr)
TW (1) TWI377611B (fr)
WO (1) WO2010030484A2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7985617B2 (en) 2008-09-11 2011-07-26 Micron Technology, Inc. Methods utilizing microwave radiation during formation of semiconductor constructions
US8951895B2 (en) * 2009-11-30 2015-02-10 Georgia Tech Research Corporation Complementary doping methods and devices fabricated therefrom
US20120021577A1 (en) * 2010-07-21 2012-01-26 Purtell Robert J Gate trench conductor fill
JP5663278B2 (ja) * 2010-11-19 2015-02-04 ルネサスエレクトロニクス株式会社 半導体装置
WO2012073583A1 (fr) * 2010-12-03 2012-06-07 Kabushiki Kaisha Toshiba Procédé pour former une couche d'implantation d'impuretés
JP5615207B2 (ja) * 2011-03-03 2014-10-29 株式会社東芝 半導体装置の製造方法
US20130023097A1 (en) * 2011-07-14 2013-01-24 Purtell Robert J U-mos trench profile optimization and etch damage removal using microwaves
US10094988B2 (en) * 2012-08-31 2018-10-09 Micron Technology, Inc. Method of forming photonics structures
JP2014241363A (ja) * 2013-06-12 2014-12-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9401274B2 (en) * 2013-08-09 2016-07-26 Taiwan Semiconductor Manufacturing Company Limited Methods and systems for dopant activation using microwave radiation
CN108351599B (zh) * 2015-09-04 2021-01-12 应用材料公司 用于校正基板上的不均匀图像图案的方法、计算机系统和非暂时性计算机可读介质
CN107958839B (zh) * 2016-10-18 2020-09-29 上海新昇半导体科技有限公司 晶圆键合方法及其键合装置
CN114743970A (zh) * 2022-06-09 2022-07-12 合肥晶合集成电路股份有限公司 一种半导体结构及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051283A (en) * 1998-01-13 2000-04-18 International Business Machines Corp. Microwave annealing
US6133076A (en) * 1999-08-24 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor
US6528361B1 (en) * 1996-11-20 2003-03-04 Korea Advanced Institute Of Science And Technology Process for preparing a polycrystalline silicon thin film
US20030186519A1 (en) * 2002-04-01 2003-10-02 Downey Daniel F. Dopant diffusion and activation control with athermal annealing

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303455A (en) 1980-03-14 1981-12-01 Rockwell International Corporation Low temperature microwave annealing of semiconductor devices
US6051483A (en) 1996-11-12 2000-04-18 International Business Machines Corporation Formation of ultra-shallow semiconductor junction using microwave annealing
KR100426380B1 (ko) 2001-03-30 2004-04-08 주승기 실리콘 박막의 결정화 방법 및 이를 이용한 반도체 소자제조 방법
JP4556520B2 (ja) 2004-07-12 2010-10-06 ソニー株式会社 半導体装置の製造方法
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
US20070167029A1 (en) * 2005-11-11 2007-07-19 Kowalski Jeffrey M Thermal processing system, components, and methods
US7718707B2 (en) 2006-12-21 2010-05-18 Innovalight, Inc. Method for preparing nanoparticle thin films
TWI547999B (zh) * 2007-09-17 2016-09-01 Ｄｓｇｉ公司 微波退火半導體材料的系統及方法
US7985617B2 (en) * 2008-09-11 2011-07-26 Micron Technology, Inc. Methods utilizing microwave radiation during formation of semiconductor constructions
TWI384556B (zh) * 2008-11-12 2013-02-01 Nat Applied Res Laboratoires Microwave activation annealing process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6528361B1 (en) * 1996-11-20 2003-03-04 Korea Advanced Institute Of Science And Technology Process for preparing a polycrystalline silicon thin film
US6051283A (en) * 1998-01-13 2000-04-18 International Business Machines Corp. Microwave annealing
US6133076A (en) * 1999-08-24 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor
US20030186519A1 (en) * 2002-04-01 2003-10-02 Downey Daniel F. Dopant diffusion and activation control with athermal annealing

Also Published As

Publication number Publication date
US20130005080A1 (en) 2013-01-03
KR101222283B1 (ko) 2013-01-15
US20100062562A1 (en) 2010-03-11
US20110237042A1 (en) 2011-09-29
US8283203B2 (en) 2012-10-09
EP2324490A4 (fr) 2013-07-03
CN102150238A (zh) 2011-08-10
TW201021104A (en) 2010-06-01
EP2324490B1 (fr) 2017-11-15
WO2010030484A2 (fr) 2010-03-18
EP2324490A2 (fr) 2011-05-25
CN102150238B (zh) 2015-06-17
KR20110066170A (ko) 2011-06-16
US7985617B2 (en) 2011-07-26
TWI377611B (en) 2012-11-21
US8455299B2 (en) 2013-06-04

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