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WO2010021457A3 - 변조도핑층을 갖는 발광 다이오드 - Google Patents

변조도핑층을 갖는 발광 다이오드 Download PDF

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Publication number
WO2010021457A3
WO2010021457A3 PCT/KR2009/003637 KR2009003637W WO2010021457A3 WO 2010021457 A3 WO2010021457 A3 WO 2010021457A3 KR 2009003637 W KR2009003637 W KR 2009003637W WO 2010021457 A3 WO2010021457 A3 WO 2010021457A3
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WO
WIPO (PCT)
Prior art keywords
modulation doping
doping layer
layer
ingan layers
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/003637
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English (en)
French (fr)
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WO2010021457A2 (ko
Inventor
김화목
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Seoul Viosys Co Ltd
Original Assignee
Seoul Optodevice Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Optodevice Co Ltd filed Critical Seoul Optodevice Co Ltd
Priority to EP09808363.7A priority Critical patent/EP2325902B1/en
Priority to JP2011523731A priority patent/JP5523459B2/ja
Publication of WO2010021457A2 publication Critical patent/WO2010021457A2/ko
Publication of WO2010021457A3 publication Critical patent/WO2010021457A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)

Abstract

변조도핑층을 갖는 발광 다이오드가 개시된다. 이 발광 다이오드는 n형 콘택층, p형 콘택층, InGaN 우물층을 포함하는 다중양자우물 구조의 활성영역을 포함한다. 여기서, n형 콘택층은, n형 불순물 도핑된 InGaN층과 언도프 InGaN층이 교대로 적층된 제1 변조도핑층과, n형 불순물 도핑된 InGaN층과 언도프 InGaN층이 교대로 적층된 제2 변조도핑층을 포함한다. 또한, 제1 변조도핑층의 InGaN층들은 서로 조성이 동일하고, 제2 변조도핑층의 InGaN층들은 서로 조성이 동일하다. 더욱이, 제2 변조도핑층은 제1 변조도핑층과 활성영역 사이에 위치하고, n-전극은 상기 제1 변조도핑층에 접촉한다. 제1 변조도핑층 및 제2 변조도핑층을 채택함으로써, 공정시간이 길어지는 것을 방지하면서 다중양자우물 구조 내에 유발되는 스트레인을 완화시킬 수 있다.
PCT/KR2009/003637 2008-08-20 2009-07-03 변조도핑층을 갖는 발광 다이오드 Ceased WO2010021457A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP09808363.7A EP2325902B1 (en) 2008-08-20 2009-07-03 Light emitting diode having a modulation doping layer
JP2011523731A JP5523459B2 (ja) 2008-08-20 2009-07-03 変調ドーピング層を有する発光ダイオード

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0081172 2008-08-20
KR20080081172 2008-08-20
KR10-2009-0060021 2009-07-02
KR1020090060021A KR101017396B1 (ko) 2008-08-20 2009-07-02 변조도핑층을 갖는 발광 다이오드

Publications (2)

Publication Number Publication Date
WO2010021457A2 WO2010021457A2 (ko) 2010-02-25
WO2010021457A3 true WO2010021457A3 (ko) 2010-04-15

Family

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PCT/KR2009/003637 Ceased WO2010021457A2 (ko) 2008-08-20 2009-07-03 변조도핑층을 갖는 발광 다이오드

Country Status (5)

Country Link
US (2) US7982210B2 (ko)
EP (1) EP2325902B1 (ko)
JP (1) JP5523459B2 (ko)
KR (1) KR101017396B1 (ko)
WO (1) WO2010021457A2 (ko)

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Also Published As

Publication number Publication date
US20110204326A1 (en) 2011-08-25
KR101017396B1 (ko) 2011-02-28
EP2325902A4 (en) 2013-04-24
JP5523459B2 (ja) 2014-06-18
JP2012500489A (ja) 2012-01-05
US8247792B2 (en) 2012-08-21
EP2325902B1 (en) 2014-03-12
EP2325902A2 (en) 2011-05-25
US7982210B2 (en) 2011-07-19
KR20100022913A (ko) 2010-03-03
WO2010021457A2 (ko) 2010-02-25
US20100044674A1 (en) 2010-02-25

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