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WO2010053915A3 - Methods for preparing a melt of silicon powder for silicon crystal growth - Google Patents

Methods for preparing a melt of silicon powder for silicon crystal growth Download PDF

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Publication number
WO2010053915A3
WO2010053915A3 PCT/US2009/063114 US2009063114W WO2010053915A3 WO 2010053915 A3 WO2010053915 A3 WO 2010053915A3 US 2009063114 W US2009063114 W US 2009063114W WO 2010053915 A3 WO2010053915 A3 WO 2010053915A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
powder
melt
preparing
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/063114
Other languages
French (fr)
Other versions
WO2010053915A2 (en
Inventor
Javidi Massoud
Steven L. Kimbel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Priority to EP09745266.8A priority Critical patent/EP2356268B1/en
Priority to JP2011534882A priority patent/JP2012508151A/en
Priority to CN2009801536954A priority patent/CN102272360A/en
Publication of WO2010053915A2 publication Critical patent/WO2010053915A2/en
Publication of WO2010053915A3 publication Critical patent/WO2010053915A3/en
Anticipated expiration legal-status Critical
Priority to NO20110755A priority patent/NO20110755A1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the position of the charge relative to the heater during and after melting of the powder and maintaining the charge above its melting temperature for a period of time to allow oxides to dissolve; and use of a removable spacer between the crucible sidewall and the silicon powder charge to reduce oxides and silicon bridging.
PCT/US2009/063114 2008-11-05 2009-11-03 Methods for preparing a melt of silicon powder for silicon crystal growth Ceased WO2010053915A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP09745266.8A EP2356268B1 (en) 2008-11-05 2009-11-03 Methods for preparing a melt of silicon powder for silicon crystal growth
JP2011534882A JP2012508151A (en) 2008-11-05 2009-11-03 Method for preparing a melt of silicon powder for crystal growth of silicon
CN2009801536954A CN102272360A (en) 2008-11-05 2009-11-03 Methods for preparing a melt of silicon powder for silicon crystal growth
NO20110755A NO20110755A1 (en) 2008-11-05 2011-05-23 Methods for Preparing a Melt of Silicon Powder for Silicon Crystal Growth

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11153608P 2008-11-05 2008-11-05
US61/111,536 2008-11-05

Publications (2)

Publication Number Publication Date
WO2010053915A2 WO2010053915A2 (en) 2010-05-14
WO2010053915A3 true WO2010053915A3 (en) 2010-09-10

Family

ID=41591647

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/063114 Ceased WO2010053915A2 (en) 2008-11-05 2009-11-03 Methods for preparing a melt of silicon powder for silicon crystal growth

Country Status (8)

Country Link
US (1) US20100107966A1 (en)
EP (2) EP2356268B1 (en)
JP (1) JP2012508151A (en)
KR (1) KR20110095290A (en)
CN (1) CN102272360A (en)
NO (1) NO20110755A1 (en)
TW (1) TWI428482B (en)
WO (1) WO2010053915A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106119956A (en) * 2016-08-19 2016-11-16 西安华晶电子技术股份有限公司 A kind of polysilicon fritting casting ingot method

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8721786B2 (en) 2010-09-08 2014-05-13 Siemens Medical Solutions Usa, Inc. Czochralski crystal growth process furnace that maintains constant melt line orientation and method of operation
CN102953117B (en) * 2011-08-31 2015-06-10 上海普罗新能源有限公司 Method for casting silicon ingot
CN103266346B (en) * 2013-05-22 2016-12-28 嘉兴和讯光电科技有限公司 The growth apparatus of a kind of crystal Pulling YVO4 crystal and growing method based on this growth apparatus
KR101540570B1 (en) * 2013-12-11 2015-07-31 주식회사 엘지실트론 A crucible for growing a single crystal and single crystal grower including the same
WO2017062949A1 (en) * 2015-10-10 2017-04-13 Sunedison, Inc. System and method for degassing granular polysilicon
US11313049B2 (en) * 2015-10-19 2022-04-26 Globalwafers Co., Ltd. Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
CN105783510A (en) * 2016-04-25 2016-07-20 苏州普京真空技术有限公司 Dual-purpose detachable crucible
CN106087045B (en) * 2016-08-19 2019-05-07 西安华晶电子技术股份有限公司 A kind of polysilicon fritting ingot casting melt and crystal growing technology
JP7049119B2 (en) * 2018-01-19 2022-04-06 グローバルウェーハズ・ジャパン株式会社 Method for manufacturing silicon single crystal
JP6844560B2 (en) * 2018-02-28 2021-03-17 株式会社Sumco Silicon melt convection pattern control method, silicon single crystal manufacturing method, and silicon single crystal pulling device
CN113802181A (en) * 2020-06-11 2021-12-17 苏州阿特斯阳光电力科技有限公司 Silicon charging method
US20220145492A1 (en) * 2020-11-12 2022-05-12 GlobalWaters Co., Ltd. Ingot puller apparatus having a heat shield disposed below a side heater and methods for preparing an ingot with such apparatus
US11987899B2 (en) * 2020-11-12 2024-05-21 Globalwafers Co., Ltd. Methods for preparing an ingot in an ingot puller apparatus and methods for selecting a side heater length for such apparatus
CN112581835B (en) * 2020-12-07 2022-02-22 东北大学 Liquid bridge generator
JP7694506B2 (en) * 2022-08-24 2025-06-18 株式会社Sumco Method for producing silicon single crystals
CN117599557B (en) * 2023-12-28 2025-08-22 新疆大全新能源股份有限公司 Amorphous silicon powder treatment system in electronic grade polysilicon tail gas
KR102834717B1 (en) * 2024-10-02 2025-08-07 실나노머티리얼즈 주식회사 Silicon oxide anode material manufacturing device and manufacturing method for lithium secondary batteries

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US4354987A (en) * 1981-03-31 1982-10-19 Union Carbide Corporation Consolidation of high purity silicon powder
EP0209954A2 (en) * 1985-07-24 1987-01-28 ENICHEM S.p.A. Melt consolidation of silicon powder
EP0258818A2 (en) * 1986-08-28 1988-03-09 HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH Process for melting silicium powders in a crucible, and crucible used in the process
WO2008150984A1 (en) * 2007-06-01 2008-12-11 Gt Solar Incorporated Processing of fine silicon powder to produce bulk silicon

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US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS61222982A (en) * 1985-03-29 1986-10-03 Toshiba Ceramics Co Ltd Unit for pulling up silicon single crystal
JPH0798715B2 (en) * 1989-01-23 1995-10-25 住友金属工業株式会社 Method for producing silicon single crystal
US5006317A (en) * 1990-05-18 1991-04-09 Commtech Development Partners Ii Process for producing crystalline silicon ingot in a fluidized bed reactor
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
JPH0710682A (en) * 1993-06-29 1995-01-13 Toshiba Corp Single crystal pulling method and manufacturing apparatus thereof
JP3085567B2 (en) * 1993-10-22 2000-09-11 コマツ電子金属株式会社 Polycrystalline recharge apparatus and recharge method
US5976247A (en) 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
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US5814148A (en) * 1996-02-01 1998-09-29 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
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JPH11310496A (en) * 1998-02-25 1999-11-09 Mitsubishi Materials Corp Method and apparatus for producing silicon ingot having unidirectionally solidified structure
US6093913A (en) * 1998-06-05 2000-07-25 Memc Electronic Materials, Inc Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections
JP3702679B2 (en) * 1998-12-08 2005-10-05 株式会社Ｓｕｍｃｏ Quartz crucible inner surface protector and method of inserting polycrystalline silicon using the same
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US6984263B2 (en) * 2001-11-01 2006-01-10 Midwest Research Institute Shallow melt apparatus for semicontinuous czochralski crystal growth
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CN102057503A (en) * 2008-05-13 2011-05-11 应用材料股份有限公司 Crystal growth apparatus for solar cell manufacturing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4354987A (en) * 1981-03-31 1982-10-19 Union Carbide Corporation Consolidation of high purity silicon powder
EP0209954A2 (en) * 1985-07-24 1987-01-28 ENICHEM S.p.A. Melt consolidation of silicon powder
EP0258818A2 (en) * 1986-08-28 1988-03-09 HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH Process for melting silicium powders in a crucible, and crucible used in the process
WO2008150984A1 (en) * 2007-06-01 2008-12-11 Gt Solar Incorporated Processing of fine silicon powder to produce bulk silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106119956A (en) * 2016-08-19 2016-11-16 西安华晶电子技术股份有限公司 A kind of polysilicon fritting casting ingot method

Also Published As

Publication number Publication date
NO20110755A1 (en) 2011-05-23
KR20110095290A (en) 2011-08-24
TW201026915A (en) 2010-07-16
WO2010053915A2 (en) 2010-05-14
JP2012508151A (en) 2012-04-05
EP2650405A2 (en) 2013-10-16
EP2650405A3 (en) 2014-02-26
EP2356268A2 (en) 2011-08-17
CN102272360A (en) 2011-12-07
US20100107966A1 (en) 2010-05-06
TWI428482B (en) 2014-03-01
EP2356268B1 (en) 2013-07-31

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