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WO2010053586A3 - Systems, methods and substrates of monocrystalline germanium crystal growth - Google Patents

Systems, methods and substrates of monocrystalline germanium crystal growth Download PDF

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Publication number
WO2010053586A3
WO2010053586A3 PCT/US2009/006052 US2009006052W WO2010053586A3 WO 2010053586 A3 WO2010053586 A3 WO 2010053586A3 US 2009006052 W US2009006052 W US 2009006052W WO 2010053586 A3 WO2010053586 A3 WO 2010053586A3
Authority
WO
WIPO (PCT)
Prior art keywords
monocrystalline germanium
systems
methods
substrates
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/006052
Other languages
French (fr)
Other versions
WO2010053586A2 (en
Inventor
Weiguo Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AXT Inc
Original Assignee
AXT Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN200810177006.0A external-priority patent/CN101736401B/en
Application filed by AXT Inc filed Critical AXT Inc
Priority to JP2011535568A priority Critical patent/JP5497053B2/en
Priority to CN2009801543267A priority patent/CN102272361A/en
Publication of WO2010053586A2 publication Critical patent/WO2010053586A2/en
Publication of WO2010053586A3 publication Critical patent/WO2010053586A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Systems, methods, and substrates directed to growth of monocrystalline germanium (Ge) crystals are disclosed. In one exemplary implementation, there is provided a method for growing a monocrystalline germanium (Ge) crystal. Moreover, the method may include loading first raw Ge material into a crucible, loading second raw Ge material into a container for supplementing the Ge melt material, sealing the crucible and the container in an ampoule, placing the ampoule with the crucible into a crystal growth furnace, as well as melting the first and second raw Ge material and controlling the crystallizing temperature gradient of the melt to reproducibly provide monocrystalline germanium ingots with improved/desired characteristics.
PCT/US2009/006052 2008-11-10 2009-11-09 Systems, methods and substrates of monocrystalline germanium crystal growth Ceased WO2010053586A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011535568A JP5497053B2 (en) 2008-11-10 2009-11-09 Single crystal germanium crystal growth system, method and substrate
CN2009801543267A CN102272361A (en) 2008-11-10 2009-11-09 Systems, methods and substrates of monocrystalline germanium crystal growth

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN200810177006.0 2008-11-10
CN200810177006.0A CN101736401B (en) 2008-11-10 2008-11-10 Method and device for growing germanium crystal
US12/554,902 2009-09-05
US12/554,902 US8506706B2 (en) 2008-11-08 2009-09-05 Systems, methods and substrates of monocrystalline germanium crystal growth

Publications (2)

Publication Number Publication Date
WO2010053586A2 WO2010053586A2 (en) 2010-05-14
WO2010053586A3 true WO2010053586A3 (en) 2010-09-30

Family

ID=42153462

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/006052 Ceased WO2010053586A2 (en) 2008-11-10 2009-11-09 Systems, methods and substrates of monocrystalline germanium crystal growth

Country Status (1)

Country Link
WO (1) WO2010053586A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI513865B (en) * 2010-12-13 2015-12-21 Axt Inc Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
RU2493297C1 (en) * 2012-02-27 2013-09-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Тверской государственный университет" Method of growing germanium monocrystals
CN115279954A (en) 2020-03-12 2022-11-01 尤米科尔公司 Heavily doped n-type germanium

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866714B2 (en) * 1997-12-26 2005-03-15 Sumitomo Electric Industries, Ltd. Large size semiconductor crystal with low dislocation density
US20050087125A1 (en) * 2003-10-23 2005-04-28 Andreas Muhe Crystal growing equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866714B2 (en) * 1997-12-26 2005-03-15 Sumitomo Electric Industries, Ltd. Large size semiconductor crystal with low dislocation density
US20050087125A1 (en) * 2003-10-23 2005-04-28 Andreas Muhe Crystal growing equipment

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CH. FRANK-ROTSCH ET AL.: "Numerical optimization of the interface shape at the VGF growth of semiconductor crystals in a traveling magnetic field", JOURNAL OF CRYSTAL GROWTH, vol. 310, April 2008 (2008-04-01), pages 1505 - 1510 *
J. VANHELLEMONT ET AL.: "Brother Silicon, Sister Germanium", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 154, no. 7, 2007, pages H572 - H583 *

Also Published As

Publication number Publication date
WO2010053586A2 (en) 2010-05-14

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