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WO2010048030A4 - Patterning of magnetic thin film using energized ions - Google Patents

Patterning of magnetic thin film using energized ions Download PDF

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Publication number
WO2010048030A4
WO2010048030A4 PCT/US2009/060868 US2009060868W WO2010048030A4 WO 2010048030 A4 WO2010048030 A4 WO 2010048030A4 US 2009060868 W US2009060868 W US 2009060868W WO 2010048030 A4 WO2010048030 A4 WO 2010048030A4
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
magnetic thin
pattern
resist
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/060868
Other languages
French (fr)
Other versions
WO2010048030A3 (en
WO2010048030A2 (en
Inventor
Omkaram Nalamasu
Steven Verhaverbeke
Majeed Foad
Mahalingam Venkatesan
Nety M. Krishna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/255,833 external-priority patent/US8535766B2/en
Priority claimed from US12/255,865 external-priority patent/US8551578B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2011533240A priority Critical patent/JP5640011B2/en
Priority to CN200980142620.6A priority patent/CN102197426B/en
Publication of WO2010048030A2 publication Critical patent/WO2010048030A2/en
Publication of WO2010048030A3 publication Critical patent/WO2010048030A3/en
Publication of WO2010048030A4 publication Critical patent/WO2010048030A4/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/82—Disk carriers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)

Abstract

A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film may be subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Claims

AMENDED CLAIMS received by the International Bureau on 19 July 2010 (19.07.2010)
1. A method for patterning a thin film on a substrate, comprising: disposing a magnetic thin film on the substrate; disposing a pattern above the magnetic thin film, the pattern having selective regions which permit penetration of energized ions; generating energized ions of one or more elements; exposing at least a portion of the magnetic thin film to the energized ions of the one or more elements, wherein the substrate is biased within a range from about 1 kV to about 11kV; changing a magnetic property of the magnetic thin film adjacent the selective regions from a first value to a second value, wherein the second value is greater than zero.
2. The method of claim 1 , wherein providing the pattern includes positioning a mask proximate to the magnetic thin film.
3. The method of claim 2, wherein the mask comprises polyvinyl alcohol.
4. The method of claim 1 , wherein the disposing a pattern comprises: depositing a resist on the surface of the magnetic thin film; contacting the resist with a mold having a three-dimensional pattern to create depressions in the resist, the depressions creating areas of thin resist and areas of thick resist, the thin resist corresponding to the selective regions which permit penetration of energized ions; and curing the resist.
5. The method of claim 4, wherein the exposing at least a portion of the magnetic thin film to energized ions comprises exposing the magnetic thin film to plasma, wherein the energized ions have sufficient energy to penetrate the thin resist to contact the magnetic thin film.
6. The method of claim 5, further comprising removing the resist.
28
7. The method of claim 5, wherein the resist is deposited and cured on the surface of the magnetic film using thermoplastic nanoimprint lithography or photo nanoimprint lithography.
8. The method of claim 5, wherein the one or more elements are selected from the group consisting of hydrogen, helium, boron, sulfur, aluminum, lithium, neon, germanium and combinations thereof.
9. The method of claim 8, wherein the substrate is biased within a range from about 1kV to about 3 kV, the plasma comprises Helium, and the thin resist layer has a thickness of about 10 nm.
10. The method of claim 5, wherein the disposing a pattern above the magnetic thin film comprises disposing a pattern on both sides of the substrate.
11. A method for patterning a magnetic thin film on a substrate, comprising: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting energized ions of one or more elements to contact portions of the magnetic thin film; generating energized ions of one or more elements with sufficient energy to penetrate selective regions of the pattern and a portion of the magnetic thin film adjacent the selective regions; exposing the substrate to the energized ions such that the energized ions contact the magnetic thin film; subjecting the portion of the magnetic thin film adjacent the selective regions to thermal excitation; and changing a magnetic property of the magnetic thin film adjacent the selective regions from a first value to a second value, wherein the second value is greater than zero.
12. The method of claim 11 , wherein portions of the magnetic thin film adjacent the selective regions exhibiting a magnetic property different than before the penetration of ions.
13. The method of claim 11 , wherein the subjecting the portion of the magnetic thin film adjacent the selective regions to thermal excitation further includes subjecting selective other portions of the magnetic thin film to thermal excitation.
14. The method of claim 13, further comprising removing the pattern about the selective other portions before subjecting the selective other portions of the magnetic thin film to thermal excitation.
15. The method of claim 11 , wherein the providing the pattern includes coating a resist over the magnetic thin film and imprinting with a mold having a plurality of projections corresponding to the selective regions of the pattern, the imprinting creating a depression in the resist, the depression having a width and a depth, wherein resist surrounding the depression has a resist thickness at least as high as the depth of the depression and the resist thickness surrounding the depression is sufficient to substantially prevent penetration of energized ions through the resist surrounding the depression.
16. The method of claim 15, wherein the subjecting the portion of the magnetic thin film adjacent the selective regions to thermal excitation comprises heating the magnetic thin film by laser annealing, flash annealing, rapid thermal annealing, or applying microwave energy.
17 The method of claim 11 , wherein the providing a pattern about the magnetic thin film comprises providing a pattern on both sides of the substrate.
18. The method of claim 17, wherein the providing the pattern includes coating a resist over the magnetic thin film and imprinting with a mold having a plurality of projections corresponding to the selective regions of the pattern.
19. The method of claim 18, wherein generating energized ions of one or more elements includes providing a vacuum chamber, injecting one or more gases containing compounds of one or more elements, igniting a plasma by using high voltage and releasing energized ions of one or more elements and exposing the substrate includes disposing the substrate in the vaccum chamber and biasing the substrate to attract the energized ions.
20. An apparatus for processing recording media, comprising: a process chamber; a substrate support disposed within the process chamber, the substrate support having a surface with a plurality of substrate support sites thereon, the substrate support adapted to support a plurality of magnetic recording media; a power supply coupled to the process chamber and adapted to generate a plasma; and a doping gas supply coupled to the process chamber and adapted to provide a doping gas to an interior of the process chamber.
21. The apparatus of claim 20, wherein the substrate support comprises a conductive surface.
22. The apparatus of claim 20, wherein the substrate support comprises a plasma-protective coating.
23. A magnetic recording medium, comprising: a substrate having a plasma-doped magnetic thin film disposed thereon, the magnetic thin film comprising a cobalt alloy layer having: a pattern of first regions having a doped ion concentration, wherein the first regions having a doped ion concentration exhibit a magnetic property different than regions adjacent to the first regions, and wherein the value of the magnetic property of the first region and the value of the magnetic property of the regions adjacent the first region are greater than zero.
24. The magnetic recording medium of claim 23, wherein the doped ion is helium, and the doped ion concentration remains substantially constant for a depth of about 10 nm.
25. The magnetic recording medium of claim 23, wherein the doped ion is selected from the group consisting of hydrogen, helium, boron, sulfur, aluminum, lithium, neon, germanium and combinations thereof.
31
PCT/US2009/060868 2008-10-22 2009-10-15 Patterning of magnetic thin film using energized ions Ceased WO2010048030A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011533240A JP5640011B2 (en) 2008-10-22 2009-10-15 Patterning of magnetic thin films using high energy ions.
CN200980142620.6A CN102197426B (en) 2008-10-22 2009-10-15 Method for Patterning Magnetic Thin Films Using Energized Ions

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/255,833 US8535766B2 (en) 2008-10-22 2008-10-22 Patterning of magnetic thin film using energized ions
US12/255,865 US8551578B2 (en) 2008-02-12 2008-10-22 Patterning of magnetic thin film using energized ions and thermal excitation
US12/255,865 2008-10-22
US12/255,833 2008-10-22

Publications (3)

Publication Number Publication Date
WO2010048030A2 WO2010048030A2 (en) 2010-04-29
WO2010048030A3 WO2010048030A3 (en) 2010-07-22
WO2010048030A4 true WO2010048030A4 (en) 2010-09-02

Family

ID=42119905

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/060868 Ceased WO2010048030A2 (en) 2008-10-22 2009-10-15 Patterning of magnetic thin film using energized ions

Country Status (5)

Country Link
JP (2) JP5640011B2 (en)
KR (1) KR101622568B1 (en)
CN (2) CN102197426B (en)
TW (1) TWI478159B (en)
WO (1) WO2010048030A2 (en)

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US8679356B2 (en) 2011-05-19 2014-03-25 Varian Semiconductor Equipment Associates, Inc. Mask system and method of patterning magnetic media
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Also Published As

Publication number Publication date
CN102197426B (en) 2014-11-05
JP2012506601A (en) 2012-03-15
JP5640011B2 (en) 2014-12-10
JP2014209404A (en) 2014-11-06
WO2010048030A3 (en) 2010-07-22
KR20110090943A (en) 2011-08-10
JP5863882B2 (en) 2016-02-17
TWI478159B (en) 2015-03-21
CN103996404B (en) 2017-08-04
KR101622568B1 (en) 2016-05-19
WO2010048030A2 (en) 2010-04-29
TW201029003A (en) 2010-08-01
CN103996404A (en) 2014-08-20
CN102197426A (en) 2011-09-21

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