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WO2009121344A2 - Procédé de fabrication d'une cellule solaire à dopage biétagé - Google Patents

Procédé de fabrication d'une cellule solaire à dopage biétagé Download PDF

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Publication number
WO2009121344A2
WO2009121344A2 PCT/DE2009/000431 DE2009000431W WO2009121344A2 WO 2009121344 A2 WO2009121344 A2 WO 2009121344A2 DE 2009000431 W DE2009000431 W DE 2009000431W WO 2009121344 A2 WO2009121344 A2 WO 2009121344A2
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WO
WIPO (PCT)
Prior art keywords
solar cell
doping
cell substrate
diffusion barrier
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2009/000431
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German (de)
English (en)
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WO2009121344A3 (fr
Inventor
Philipp Johannes Rostan
Hartmut Nussbaumer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CENTROTHERM PHOTOVOLTAICS TECHNOLOGY GmbH
Original Assignee
CENTROTHERM PHOTOVOLTAICS TECHNOLOGY GmbH
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Publication of WO2009121344A2 publication Critical patent/WO2009121344A2/fr
Publication of WO2009121344A3 publication Critical patent/WO2009121344A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method according to the preamble of claim 1.
  • the emitter By forming the emitter by means of a two-stage doping such that in the regions to be contacted a strong doping and thus a highly doped emitter, in the other areas, however, compared with the highly doped emitter region weak doping, therefore, an improvement in efficiency can be achieved become.
  • a heavily or highly doped emitter is presently understood to be an emitter with a sheet resistance of the emitter of less than about 70 ⁇ / sq, so that it is contactable by means of industrially applied screen printing technology.
  • a doped emitter is understood to mean a doping which leads to a sheet resistance of usually more than 70 ⁇ / sq, it being clear to the person skilled in the art that this value may be lower for deepened emitters.
  • the "weak" doping is always to be seen in relation to the corresponding heavily doped region of the same kind; in the case of a lightly doped emitter region, that is, in comparison to a heavily doped emitter region, but not in relation to, for example, a heavily doped backside field region. It is therefore to be considered that in the case of a solar cell various doped regions can be present, which in principle can be designed in each case for doping with two or more stages. For example, an emitter, a back field or the volume doping of the solar cell substrate can be configured in two or more stages.
  • the abovementioned sheet resistors for delimiting a heavily doped emitter region from a lightly doped emitter region are therefore not readily transferable to other two-stage dopants.
  • the sheet resistances in two-stage vomitorn and their relation to each other should also be considered separately from the sheet resistances of other doped regions.
  • the values for the sheet resistances may vary for two-stage rear-side panels.
  • sheet resistances of less than about 60 ⁇ / sq. range of more than about 60 ⁇ / sq between the areas to be contacted.
  • the preparation of two-stage doping is complex, which is why it is rarely used in an industrial 'solar cell production.
  • the present invention is therefore based on the object to provide a cost-effective method for forming a two-stage doping as an alternative to previously known methods available.
  • the invention is based on the object to provide a cost-effectively producible solar cell with two-stage doping available.
  • the starting point for the method according to the invention is formed by a semiconductor substrate whose volume is doped.
  • a semiconductor substrate whose volume is doped.
  • predominantly p-doped semiconductor substrates are used as solar cell substrates, in particular p-doped silicon substrates.
  • Solar cells produced therefrom are commonly referred to as p-type solar cells.
  • n-type solar cells are increasingly being manufactured in which a semiconductor substrate, for example silicon in turn, serves as the starting point, but which now has a volume doping of the n-type.
  • the inventive method is in its Application is not limited to p-type or n-type solar cells, but can be used in the production of both types of solar cells. This makes it possible to standardize the manufacturing processes for the various semiconductor material types.
  • the solar cell substrate is at least partially lightly doped in a doping region.
  • the relation "weak” is generally not to be understood in comparison to the volume doping of the solar cell substrate used / but relative to a heavily doped region of the same type.
  • a diffusional barrier is formed on a surface of the solar cell substrate.
  • the solar cell substrate is heavily doped, resulting in a two-stage doping with high doping in the regions of local openings, whereas in the remaining doping region there is a weak doping.
  • the ' described ' diffusion barrier is thermally grown, for example, a silicon dioxide layer on a silicon substrate, or applied by means of a chemical or physical vapor deposition (CVD or PVD) on the surface of the solar cell substrate.
  • CVD chemical or physical vapor deposition
  • This is to process steps that are used in the manufacture of solar cells for some time on an industrial scale, for example, to passivate the surfaces of solar cells or for forming an antireflection 'flexion coating, and therefore known in detail, and cost-effectively integrated into the manufacturing process are .
  • the introduction of the local openings preferably takes place by means of laser beam evaporation, sawing, water jet cutting or etching.
  • the crystal structure of the silicon substrate is usually damaged. These damages act in the operation of the solar cell as efficiency-reducing recombination centers.
  • a development of the invention therefore provides that the local openings are over-etched after their introduction. If the openings are introduced by etching, this is preferably done simultaneously with the introduction of the openings.
  • a dielectric preferably silicon dioxide or another glass
  • a glass is also to be understood as meaning phosphorus or boron glass, as arises in the context of per se known phosphorus or boron diffusion processes on the surface of the semiconductor substrate, in particular of the silicon substrate.
  • Phosphorus and boron glass can also be applied as a diffusion barrier independently of diffusion processes by means of CVD or PVD processes.
  • An advantageous embodiment of the invention provides that before the weak doping in the doping region as a diffusion barrier, a dopant, such as phosphorus or boron, or a compound having one of these elements, containing glass or a dopant-containing oxide or nitride is deposited and in addition, for forming the weak doping of the dopant from diffusion barrier out in that way.
  • larzellensubstrat is diffused, for example, by annealing the diffusion barrier.
  • a dopant-containing oxide may find containing silica "using for example, a phosphorus or boron.
  • dopant-containing nitride may, for example, phosphorus or boron-containing silicon nitride are used.
  • Tempering steps can, in particular at high temperatures, be associated with negative effects on the efficiency of the finished solar cell, since they can promote the introduction of impurities into the solar cell substrate or the rearrangement of impurities in the solar cell substrate.
  • the weak doping takes place together with the strong doping in a common heat treatment step.
  • the weak doping may be due to diffusion of dopant from preapplied dotierstoff Anlagenm glass or oxide during a conventional POCl 3 - followed by 3 diffusion in a tube ER- ⁇ or BBr.
  • the tube diffusion causes the strong doping in the areas of local openings.
  • the tube diffusion is performed at high temperatures, usually in the range between 700 0 C and 120O 0 C, takes place at the same time 'in-diffusion of dopant from the dopant-glass in the solar cell substrate, causing the weak doping in the remaining impurity region.
  • a dopant-containing paste may be printed on the solar cell substrate surface after the localization Openings have been introduced. This can be done by any known printing technology such as screen, stamp, roller or syringe printing.
  • the spin-coating or spraying of a dope-containing solution represent further possible embodiments.
  • 'An embodiment variant of the invention provides that in areas of local openings dopant is deeper driven into the solar cell substrate than in the rest of the impurity region. This can be achieved, for example, by a corresponding temperature control during the heavy doping, which is described in the literature inter alia as "drive in.”
  • dopants of weak doping can pass through the glass in which they are present as dopant at the In this way, advantageous doping profiles, in particular advantageous emitter profiles, can be formed for the respective solar cell types.
  • the emitter of a solar cell can advantageously be designed as a two-stage doping.
  • a two-stage design of Emitterdotierüng brings benefits.
  • the design of a rear side field of the solar cell frequently referred to as a "back surface field” can also bring about improvements in efficiency
  • strong dopings are provided in the doping region belonging to the back field, where the metal contacts of the back sides furthermore - have contact to attach situated in the other, between the rear contacts areas of belonging to the back surface field doping region is, however, lightly doped '..
  • the locally heavy doping under the rear contacts acts as locally particularly 'strong sense of back surface field and effectively prevents the diffusion of minority carriers to the back contacts and thus their Rekombination- to this.
  • the weak doping in the doping region associated with the backside field increases the transverse conductivity in this doping region.
  • the weak doping of the back side panel ⁇ may also be used for over-compensation of a back side mounted emitter.
  • a back emitter is formed, for example, when the back side of the solar cell substrate is exposed unprotected to a gas phase emitter diffusion.
  • the invention is based on a solar cell substrate in which overcompensation of a backside emitter is not required.
  • the volume doping of the solar cell substrate is used as a weak doping in the doping region belonging to the back surface field.
  • a preferred embodiment of the invention provides that to be removed in at least one insertion of a local opening in the diffusion barrier parts of the solar cell substrate. This is done in such a way that the local opening up to extends the solar cell substrate.
  • a metal contact to be mounted in the local opening is advantageously arranged in a section of the local opening extending into the solar cell substrate. In this case, this section and the metal contact are preferably designed in such a way that the metal contact can be largely, preferably completely, arranged in the section extending into the solar cell substrate. In this way, solar cells with buried contacts, so-called "buried contacts * can be produced with advantage. In this solar cell type Abschattungssche be reduced by the metal contacts, which leads to an improvement in efficiency. In addition, the metal contacts are protected against mechanical stress.
  • Figure 1 Schematic representation of a first embodiment of a method according to the invention, in which a two-stage emitter is formed.
  • Figure 2 The formation of a back surface field by means of a two-stage doping.
  • Figure 3 Another embodiment of a method according to the invention, in which a two-stage emitter is formed.
  • Figure 4 An embodiment variant of the invention for producing a solar cell with buried contacts and a two-stage emitter.
  • Figure 1 shows a first embodiment of a method in which a two-stage emitter is formed.
  • a diffusion barrier 12 is first deposited 102 on a lightly doped doping region 20 of a solar cell substrate 10 that is doped with opposite polarity in opposite polarity.
  • a representation of a depletion zone associated with a resulting pn junction is shown in FIG Embodiments omitted in favor of better clarity.
  • a diffusion barrier 12 a glass can be used. If silicon is selected as the material for the solar cell substrate, the use of a silicate glass as a diffusion barrier 12 is appropriate.
  • the doping region may have been lightly doped by means of a phosphorus or boron diffusion from the gas phase and a resulting phosphorus or boron glass now be used as a diffusion barrier.
  • a diffusion barrier 12 for example again in the form of a glass, in particular one of the glasses already mentioned or also in the form of silicon dioxide.
  • local openings 16 are introduced into the diffusion barrier 12. In the exemplary embodiments described here, this is always done by means of laser radiation with which the diffusion barrier 12 is locally evaporated. Alternatively, the openings 16 can in all cases be introduced by means of the per se known technologies of water jet cutting, etching or sawing. The choice of the means for introducing local openings 16 in the diffusion barrier 12 can therefore be adapted to existing process equipment and the type of solar cell to be manufactured. In the following, dopant is introduced into the solar cell substrate through the local openings 16, and the solar cell substrate 10 is heavily doped 106 in the local openings 16. In the remaining regions of the doping region 20, the surface of the solar cell substrate 10 is against further diffusion of further dopant into the solar cell substrate Protected by the diffusion barrier 12.
  • heavily doped regions 20a and lightly doped regions 20b are formed.
  • the dopants are also driven deeper into the solar cell substrate, so that a two-stage emitter profile represented schematically by the dashed line in FIG. 1 is established.
  • FIG. 1 it is assumed that no dopant reaches the rear side or the side edges of the solar cell substrate during the heavy doping 106. Otherwise, at these points the heavy doping would later be at least partially removed or overcompensated.
  • the diffusion barrier 12 is subsequently removed 108, for example by means of a wet-chemical etching step.
  • front metal contacts 22 are applied to the solar cell substrate 10, 110 being disposed over the heavily doped regions 20a.
  • the application can be carried out in principle in all known ways, in particular by means of a printing process such as screen, roller, stamp or injection pressure.
  • a direct Piat Schl be it electrically or de-energized, conceivable in which the metal contacts are formed without prior application of a seed layer.
  • the surface of the solar cell substrate 10 is additionally provided with an antireflection coating 24 in a manner known per se.
  • an antireflection coating 24 instead of removing the diffusion barrier 12 before applying 110 of the metal contacts, it is possible to leave them first on the solar cell substrate and thereby ensure that the applied contacts come into contact with the surface of the solar cell substrate 10 at most in areas of the local openings 16. The arrangement and orientation of the metal contacts 22 over the heavily doped regions 20a can be ensured in this way.
  • Figure 1 illustrates a method for producing a two-stage emitter
  • Figure 2 illustrates an example of the formation of a two-stage back panel.
  • the starting point for a method for forming a two-stage rear-side field can form the solar cell substrate in the state at the end of the method according to FIG. 1, as shown by way of example in FIG. However, this is not mandatory.
  • a glass 26 containing dopant is first of all applied 112 to the back side of the solar cell substrate 10.
  • the glass 26 is deposited on the rear side of the solar cell substrate by means of CVD or PVD, so that a doping region 28 to be assigned to the back field is covered.
  • thermal growth for example of an oxide, in particular of a silicon dioxide, is conceivable.
  • a dopant-containing nitride in particular a silicon nitride is conceivable.
  • Similar to the introduction 104 of the openings 16 in the front diffusion barrier 12 are in the back Diffusionsbar- This is done again by means of laser radiation. 14, wherein, as discussed above, alternatively other technologies can be used.
  • a dope-containing paste 32 is printed 116 on the rear diffusion barrier 26.
  • the local openings in the rear diffusion barrier 26 are filled with the paste 32.
  • the type of the dopant in the back diffusion barrier 26 is the same as that in the paste 32 as well as the type of volume doping of the solar cell substrate 10.
  • dopants from the paste 32 provided in the local openings 30 diffuse into the solar cell substrate 10, while away from the local openings 30, the dopant from the paste 32 is prevented or at least considerably impeded from diffusing into the solar cell substrate 10 by the diffusion barrier 26 is.
  • dopant diffuses out of the dopant-containing glass 26, ie, out of the diffusion barrier 26, into the solar cell substrate during the annealing 118.
  • concentrations in the paste 32 and the rear diffusion barrier 26 are to be selected such that, in the case of a subsequent tempering 118, significantly more dopant enters the solar cell substrate 10 from a paste surface immediately adjacent to the solar cell substrate ⁇ 0 than directly from the same. This results in heavily doped regions 34a in regions adjacent to the local openings 30 and lightly doped regions 34b in the remaining regions of the doping region 28 associated with the back surface.
  • there is a two-stage backside field As a result, a two-stage back field results with a dashed line at the back in FIG. Side of the solar cell substrate schematically indicated doping profile. ⁇
  • the dopant-containing paste 32 can also be used as a back contact with a suitable choice of paste, ' for example, a paste containing aluminum in the case of a p-type volume doping of the solar cell substrate 10. In any case, it is not necessary to print the paste 32 across the entire area on the back side of the solar cell substrate 10 or the diffusion barrier -26 of the rear side field. Although this simplifies the printing process, because an alignment is not required, but in principle the introduction of the paste 32 in the local openings 30 is sufficient.
  • FIG. 2 of the embodiment of a two-stage rear-side panel is not bound to precede the method steps of FIG. 1, but represents an independent embodiment variant of the invention.
  • a two-stage emitter In cooperation with a two-stage emitter, however, particularly advantageous effects can be achieved.
  • the doping region 20a, 20b of the emitter extends only along the front side of the solar cell substrate 10, but the embodiment of FIG. 2 also overcompensates at the rear over the entire surface of the solar cell substrate 10 allows weak doping 20b of the emitter, as it can result, for example, in a weak doping by means of a POCl 3 tube diffusion, provided that the back and edges of the solar cell substrate are not masked.
  • FIG. 2 shows the formation of a two-stage rear field starting from an already existing two-stage emitter. As stated above, this is not mandatory. It is instead conceivable that at least one doped regions 24a, 24b belonging to the emitter are formed during the annealing 118 together with the heavily and lightly doped regions of the rear side field 34a, 34b.
  • the annealing ⁇ 118 provides in such a case, 'a Kodiffusions administrat. A' such Kodiffusions administrat is difficult if the step of the strong doping 106 in the local openings 16 is performed by means of a tube diffusion.
  • a dopant-containing paste with dopant opposite type is therefore preferably used in addition to the dopant-containing paste 32 of the back on the front side of the solar cell substrate, a dopant-containing paste with dopant opposite type as a dopant source.
  • FIG. 3 illustrates a further embodiment of the invention.
  • the starting point here is a solar cell substrate 11, the surface of which is first at least partially structured. Such surface structuring or surface texturing serves to further reduce the surface reflection of the solar cell substrate.
  • the invention also enables the formation of two-stage 'dopings in solar cell substrates 11 with a surface structure or surface texture.
  • a diffusion barrier 42 here in the form of a dopant-containing glass 42, by means of CVD or PVD applied 122 or thermally grown 122, for example, a phosphor or boron glass.
  • local openings 16 are subsequently introduced into the diffusion barrier 42 by means of laser radiation 14, wherein in turn other technologies may be used.
  • a dope-containing solution 18 is sprayed 126 or otherwise applied to the diffusion barrier 42 and the local openings 16.
  • the dopant concentration in the solution 18 and the glass 42 are in turn designed such that in an immediately adjacent to the solar cell substrate 11 surface of the solution 18 significantly more dopant enters the solar cell substrate 11 in a subsequent 'annealing 128 than from an equal, immediately result of the solar cell substrate 11 'adjacent surface dopant glass 42.
  • the dopant in the heavily doped regions 43a is also driven deeper into the solar cell substrate 11 here, so that the emitter profile illustrated schematically by the dashed line in FIG. 3 results.
  • FIG. 4 shows a schematic diagram of another embodiment of the invention. This goes from 'of the solar cell substrate 10, wherein a first impurity region is lightly doped 44th This can be done, for example, by spinning or spraying a phosphoric acid-containing solution connected to a subsequent annealing step.
  • a Tube diffusion on the basis of POCl 3 or BBr 3 is again conceivable e- b liaison, in which case, contrary to the representation in Figure 4 on the entire surface of the solar cell substrate, a dopant entry was made, if no masking measures are taken. However, this would have an effect on the further method steps only to the extent that this dopant entry on the rear side would have to be at least partially removed or overcompensated and any short circuits from the emitter to a rear side contact would have to be removed.
  • FIG. 4 shows the deposition of a diffusion barrier on the surface of the solar cell substrate 10 in the doping region 44.
  • the diffusion barrier 46 is a silicon dioxide. oxide layer 46 grown thermally.
  • deposition by means of CVD or PVD is also conceivable in principle, for which reason the silicon dioxide layer 46 in FIG. 4 is shown in simplified form only on the front side.
  • a silicon dioxide layer is formed strictly on each unprotected silicon surface of the silicon substrate, in particular on the edges of the solar cell substrate.
  • the diffusion barrier can serve as an etching barrier during this etching process at the same time. This is the case, for example, when a phosphorus glass is used as a diffusion barrier and a solution containing KOH for laser or saw damage etching. If the local openings 47 etched into the solar cell substrate, an additional overetching is usually not required. Laser damage or saw damage etching is obviously also advantageous in the other embodiments described.
  • the introduction of the local openings 47 and laser damage sets 134 is followed by a strong doping 136 in the local openings 47.
  • this is done by means of a gas-phase diffusion, for example a " POCl 3 or BBr 3 tube diffusion, whereby the edges and the backside of the solar cell substrate 10 are not exposed to the dopant, for example by masking these areas
  • the dopant introduction at the edges of the solar cell substrate could subsequently be effected by means of per se known methods of edge insulation, eg laser cutting or backside etching.
  • heavily doped regions 44a are found in regions of the solar cell substrate 10 adjacent to the local openings 47, while weakly doped regions are present in the remaining regions of the doping region 44, so that a two-stage doping and thus a two-stage or selective emitter is present.
  • the dopant in the heavily doped regions 44a is driven deeper into the solar cell substrate 10 than in the weakly doped regions 43b, so that a doping profile schematically indicated by the dashed line in FIG. 4 results, in the present case an emitter profile.
  • the diffusion barrier will be hereinafter 46 138, for example by 'etching, and metal contacts 138. incorporated into the local openings 47 48
  • it may be advantageous to leave the diffusion barrier 46 during the introduction of the metal contacts for example by screen printing a metal-containing paste or by current-driven or electroless deposition methods, first on the solar cell. In both cases, solar cells with at least partially buried contacts are inexpensively obtained.
  • the metal contacts are fully arranged in a reaching into the solar cell substrate 10 in portion 45 of the local openings 47 48th In this way, shading of the photosensitive front side of the solar cell substrate 10, or of the finished solar cell, by the metal contacts 48 is largely avoided.
  • taltungstinen can be formed.
  • a silicon dioxide can be used not only in the exemplary embodiment of FIG. 4 as a diffusion barrier, but basically also in the exemplary embodiment of FIG. 1.
  • method steps described in the context of the formation of a two-stage emitter can be used in an analogous manner to form a two-sided rear field vice versa.
  • methods for forming a two-stage emitter can be combined with methods for forming a two-stage back surface field, so that solar give larzellen • containing both a two-stage back surface field as well as a two-stage emitter.
  • the method according to FIG. 2 can be combined not only with the method according to FIG. 1, but also with the method according to FIG. 3 or 4. Dopings with more than two doping stages can be realized by multiple application of the method according to the invention.

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Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire pourvue d'un dopage biétagé (20a, 20b; 34a, 34b; 44a, 44b), selon lequel au moins des parties d'une région de dopage (20; 28; 44) d'un substrat de cellule solaire (10; 11) sont faiblement dopées (132), une barrière de diffusion (12; 26, 42) est formée (102; 122) dans la région de dopage (20; 28; 44) sur une surface du substrat de cellule solaire (10; 11), des ouvertures locales (16; 30; 47) sont pratiquées (104; 114; 134) dans la barrière de diffusion (12; 26, 42) et le substrat de cellule solaire (10; 11) est fortement dopé (106; 136) dans des régions des ouvertures locales (16; 30; 47), la barrière de diffusion (12; 26; 42) étant obtenue thermiquement ou appliquée sur la surface du substrat de cellule solaire par dépôt chimique ou physique en phase vapeur (102; 122).
PCT/DE2009/000431 2008-04-04 2009-04-03 Procédé de fabrication d'une cellule solaire à dopage biétagé Ceased WO2009121344A2 (fr)

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DE102008017647A DE102008017647A1 (de) 2008-04-04 2008-04-04 Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung
DE102008017647.8 2008-04-04

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DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen
DE102007051725B4 (de) * 2007-10-27 2014-10-30 Centrotherm Photovoltaics Ag Verfahren zur Kontaktierung von Solarzellen

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