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EP2601691A2 - Procédé de fabrication d'une cellule solaire comportant un émetteur sélectif - Google Patents

Procédé de fabrication d'une cellule solaire comportant un émetteur sélectif

Info

Publication number
EP2601691A2
EP2601691A2 EP11770037.7A EP11770037A EP2601691A2 EP 2601691 A2 EP2601691 A2 EP 2601691A2 EP 11770037 A EP11770037 A EP 11770037A EP 2601691 A2 EP2601691 A2 EP 2601691A2
Authority
EP
European Patent Office
Prior art keywords
solar cell
glass layer
dopant
cell substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11770037.7A
Other languages
German (de)
English (en)
Inventor
Jolanta Olkowska-Oetzel
Jörg ISENBERG
Andreas Teppe
Matthias Geiger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Photovoltaics AG
Original Assignee
Centrotherm Photovoltaics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102010033030A external-priority patent/DE102010033030A1/de
Priority claimed from DE102010054182A external-priority patent/DE102010054182A1/de
Application filed by Centrotherm Photovoltaics AG filed Critical Centrotherm Photovoltaics AG
Publication of EP2601691A2 publication Critical patent/EP2601691A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for producing a solar cell with a selective emitter according to the preamble of claim 1.
  • a variant of the production of a selective emitter which is interesting for industrial solar cell production is laser diffusion. This provides that for ⁇ next a homogeneous, weakly doped and thus high-impedance emitter is formed on a solar cell substrate.
  • the solar cell substrate is heated locally by means of laser radiation. In this way, on the one hand, the position of dopant already present in the solar cell substrate can be changed; For example, it can be driven deeper into the solar cell substrate and in this way the Emit ⁇ terprofil be changed locally.
  • the ratio of electrically inactive dopant to electrically active dopant can be changed locally.
  • the laser diffusion which is the formation of an optimal selective Obstruct Emitters.
  • phosphorus or boron diffusions are designed to form an emitter profile that is optimal for the current generation, or more precisely, emitter depth profile.
  • less dopant is available in dopant-containing glass layers than would be necessary for the formation of optimally heavily doped regions of the selective emitter. This results in increased contact resistance between the heavily doped emitter regions and metal contacts of the finished solar cell arranged thereon, which has a negative effect on the efficiency of the solar cell.
  • the present invention is therefore based on the object of providing an improved method for producing a solar cell with a selective emitter by means of laser diffusion.
  • the basic idea of the invention is such for a part of the surface of the solar cell substrate ⁇ form containing as a dopant glass layer, a glass layer on the Wenig ⁇ least, having a lower dopant concentration in a nearer to the surface of the solar cell substrate first partial layer of the glass layer than in a WEI ter removed from the surface of the solar cell substrate gels ⁇ genes second sub-layer of the glass layer.
  • the spacing of the sub-layers from the surface of Solarzel ⁇ lensubstrats is based on the closest surface of the solar cell substrate to be determined.
  • a dopant may be provided at ⁇ game as phosphorus or boron.
  • a phosphor or boron glass layer is preferably used.
  • the solar cell substrate a silicon substrate is preferably used.
  • a weakly doped emitter in the present sense means an emitter with a sheet resistance of 80 ⁇ / square to 200 ⁇ / square.
  • a lightly doped emitter is formed with a sheet resistance of 100 ⁇ / square to 180 ⁇ / square, and particularly preferably with a layer resistance of 120 ⁇ / square to 160 ⁇ / square.
  • Heavily doped emitter regions in the present sense have a sheet resistance of less than 60 ⁇ / square.
  • the glass ⁇ layer is designed such that it comprises in the second part ⁇ layer at least twice as high Dotierstoffkonzentra- tion as in the first sublayer.
  • the second sub-layer is for a sogenann ⁇ th drive-in step, which is often referred to as drive-in step ⁇ be distinguished and during which the dopant from the glass layer ⁇ driven into the solar cell substrate, is excluded.
  • more sub-layers can be provided which have such a dopant that a total of about the thickness of the glass layer of time results in monotonically falling ⁇ dopant concentration.
  • the partial layers and their dopant concentrations are selected such that there results a dopant concentration which drops over the thickness of the glass layer in a strictly monotonically decreasing manner.
  • the provided at least one part of the Oberflä ⁇ surface of the solar cell substrate prior to forming the glass layer having a texture can be formed in any manner known per se, for example by wet-chemical etching.
  • the first and the second partial layer, the dopant contained ⁇ Tenden glass layer are preferably formed before Do ⁇ animal material containing dopant of the glass layer is diffused to a considerable extent in the solar cell substrate. A considerable amount of diffusion of dopant occurs when it is present in the solar cell substrate
  • the first and the second part containing ⁇ layer of the dopant glass layer are particularly preferably formed before for the purpose of forming the lightly doped emitter dopant from the dopant-containing glass layer is diffused into the solar cell substrate.
  • the first and the second sub-layers of the dopant-containing glass layer are formed before the local diffusion of the additional dopant takes place.
  • a phosphorus glass layer is formed as a glass layer in the course of P0Cl3 diffusion.
  • a P0Cl3-containing atmosphere formed in the course of the P0Cl3 diffusion during a first period for the purpose of forming the first partial layer a first amount of O 2 is added.
  • P0Cl formed diffusion added 3 -containing atmosphere during a later second time period for the purpose of forming the two ⁇ th sub-layer a second quantity of O 2, which is were less than the first amount of O 2 -
  • both partial layers of the glass layer can be formed with low cost in an already performed furnace step, namely the POCl 3 diffusion.
  • the additional locally diffused dopant is up to a maximum depth of 30 nm in the So driven ⁇ larzellensubstrat, preferably up to a ma imum ⁇ depth of 20 nm and especially up to a maximum Depth of 10 nm. Since it has been found that for a low contact resistance between the heavily doped emitter regions and contacts arranged thereon, essentially the near-surface concentration of electrically active and inactive dopant is crucial, in this way a change in the emitter profile in the said values excess depths are prevented so that an increase in charge carrier recombination can be avoided.
  • the local heating of regions of the solar cell substrate located below the glass layer preferably takes place by means of pulsed laser radiation with a pulse length of less than 300 ns, preferably of less than 100 ns.
  • the solar cell substrate is heated only very close to its Oberflä ⁇ che and thus prevents deep in-diffusing additional dopant.
  • lasers with a so-called flattop profile have proven themselves.
  • a square or rectangular Flattop profile is used ver ⁇ .
  • the aspect ratio can be as example ⁇ 1:10 but is preferably a Aspect Ratio ⁇ nis from 1: 5 and particularly preferably is one of 1: 3. This made ⁇ light a high throughput in production.
  • the portions of the solar cell substrate underlying the glass layer are preferably locally heated by laser radiation having a wavelength of 532 nm or less. Particular preference is given to using blue or ultraviolet laser radiation. This makes it easier to prevent a deep diffusion of dopant to ⁇ sharmlichen. In addition, a high processing speed is made possible.
  • the laser radiation is in the local heating preferably performed upstream überlapprile over the solar cell substrate and a multiple scanning of the solar cell substrate vermie ⁇ .
  • the average dopant concentration ⁇ is calculated from the sum of the dopant contained in total in the entire glass layer based on the volume of the entire glass layer. In this way it can be ensured that there is sufficient even after the formation of the lightly doped emitter and the associated diffusion of dopant in the solar cell substrate Do ⁇ animal material in the glass layer is available to during training of highly doped emitter regions provides a reasonable ⁇ sponding amount additional dopant locally in the solar cell substrate ⁇ to be able to diffuse.
  • Concentration can be the predominant in the glass layer medium Dotierstoffkon- for example, be increased to further dopant is introduced into the existing glass layer, for example by diffusion of dopant from a dopant source added in the existing glass ⁇ layer inside.
  • an additional layer of glass having a dopant concentration of the glass layer for increasing the prevailing average dopant concentration in the glass layer an additional layer of glass having a dopant concentration of the glass layer, the average excess dopant applied to the existing glass layer ⁇ the. This results in an enlarged glass layer with an increased average dopant concentration.
  • the additional glass layer can be applied, for example, by exposing the glass layer to a POCl 3 or BBr 3 -containing atmosphere after forming the lightly doped emitter.
  • the solar cell substrate is preferably tempered before applying a metallization on the heavily doped emitter regions.
  • electrically inactive phosphor activated.
  • the annealing is advantageously carried out at temperatures in the range from Be ⁇ 750 ° C to 1000 ° C for a period of two seconds to 30 minutes.
  • Particularly preferred is a group consisting of nitrogen and / or oxygen atmosphere getem ⁇ pert.
  • a surface portion of the solar cell substrate is melted and recrystallized, of less than 10%, preferably less than 5% of the total surface of all the locally heated areas be ⁇ carries.
  • the solar cell substrate is not melted at all during the local heating.
  • the local heating of the glass layer located under the regions of the solar cell substrate can be carried out under a Schutzgasatmo ⁇ sphere.
  • the solar cell substrate can be arranged, at least partially, in the protective gas atmosphere.
  • the scrim ⁇ NEN below the glass layer portions of the solar cell substrate is heated locally by means of laser radiation and the solar cell substrate ⁇ arranged completely at least in part, preferably, in the protective gas atmosphere.
  • the protective gas atmosphere may be formed by a gas mixture comprising nitrogen and / or noble gases, for example argon.
  • nitrogen or Ar ⁇ gon is used as a protective gas.
  • the production of a solar cell with selective emitter can be improved by means of laser diffusion in the following ways:
  • laser radiation with a very short pulse duration of less than
  • a sur fa ⁇ CHIGE diffusion barrier arises under the dopant glass. This prevents excessive diffusion of dopant from the dopant-containing glass provided with a high dopant concentration.
  • the silicon oxide layer is to be formed in such a way that, due to its barrier effect, initially only a lightly doped emitter is formed whose dopant concentration at the surface of the solar cell substrate is less than 2-10 cm, preferably less than 10 cm, in the case of a phosphor emitter. In the ⁇ sem sense, the silicon oxide layer impedes the diffusion of dopant from the dopant glass into the silicon substrate.
  • the thickness of the silicon oxide layer ⁇ is to be selected sufficiently small that by means of local ER- hitzens with laser radiation locally considerably larger amounts dopant may be driven into the silicon substrate as in the non-irradiated areas.
  • the silicon oxide layer is preferably designed such that there is a concentration of electrically active phosphorus in the areas treated by laser after the laser treatment, which corresponds to the solubility of phosphorus m silicon, ie m about 3-10 cm, and ei ⁇ ne significant concentration of electrically inactive phosphorus.
  • the option described To improve the method for example, be realized as follows: First, the silicon substrate is exposed to a POCl 3 - containing atmosphere, thereby forming a first part ⁇ layer of a phosphorus glass layer. In addition, the silicon substrate of a ( ⁇ atmosphere is exposed and the silicon oxide film grown directly on the silicon substrate. The silicon oxide film is thus formed ⁇ substrate between the first partial layer of phosphorus glass layer and the silicon. Below is exposed the silicon substrate again a P0Cl3-containing atmosphere and thereby we ⁇ antes formed a further sub-layer of phosphorus glass layer ⁇ .
  • a further alternative or additional option to procedural rensverêtung is to form first a dopant ent ⁇ holding glass layer on a solar cell substrate, and so ⁇ larzellensubstrat diffuse hereinafter dopant from this glass layer into and thereby form a lightly doped emitter. Furthermore is introduced, or before the laser diffusion further dopant in the existing glass layer deposited an additional glass layer on the existing layer of glass, wherein the additional glass layer ⁇ a higher dopant concentration than the existing glass layer at the time of applying the supply sat zglastik.
  • Another alternative or supplemental enhancement option is that after forming a lightly doped emitter and a local diffusion additional Do- is pet substance is established and is annealed prior to any application of a Me ⁇ metallization on heavily doped emitter regions, the Solarzel ⁇ lensubstrat. Here, it is activated in the heavily doping ⁇ th emitter regions by means of local diffusion is applied electrically inactive dopant, so that the sheet resistance in these areas is further reduced. This in turn allows low contact junction resistances between the heavily doped emitter regions and a metallization deposited thereon. Annealing is preferably carried out in a temperature range of
  • the annealing is advantageously carried out in an atmosphere consisting of nitrogen and / or oxygen (O 2).
  • a dopant glass containing layer forms ⁇ on at least a part of a surface of a solar cell substrate out. Out of this glass layer, dopant is diffused into the solar cell substrate and in this way a lightly doped emitter is formed in regions of the solar cell substrate covered by the glass layer. Subsequently, a further dopant source is on at least a portion of those areas of the So ⁇ larzellensubstrats in which the lightly doped EMIT was formed ter previously deposited on the solar cell substrate. This further dopant source ⁇ may be applied indirectly or directly on the solar cell substrate.
  • regions of the solar cell substrate located below the further dopant source are locally heated, preferably by means of laser radiation, and in this way additional dopant from the further dopant source diffuses into the solar cell substrate. This serves for For locally heavily doped emitter regions form ⁇ .
  • the further dopant source is preferably applied over the whole area to an emitter side of the solar cell substrate. Under the emitter side of that side of the Solarzel ⁇ lensubstrats is to be understood, on which the emitter extends over the largest area.
  • the further dopant source ⁇ is indirectly applied to the solar cell substrate
  • the further dopant is preferably applied in layers to the glass. In particular, it can be applied directly to the glass layer. After the diffusion of additional dopant from the further dopant source into the solar cell substrate, residues of the further dopant source are deposited. Le, the glass layer and any oxides formed in the local heating of the solar cell substrate removed.
  • the glass layer is first removed. After Eindiffu- sion additional dopant from the further dopant source ⁇ in the solar cell substrate residues of the further dopant and possible be removed in the local heating of the solar larzellensubstrats formed oxides.
  • the formation of the glass layer and the diffusion of dopant from the glass layer into the solar cell substrate can be carried out for the purpose of forming weakly doped emitter regions, independently of the formation of heavily doped emitter regions.
  • the glass layer and the dopant for example, needs not to be construed to the stands during the local heating genü ⁇ quietly dopant for the training of highly doped Emitterbe- rich available. This results in advantageous freedom in the process and for the optimization of the selective emitter.
  • the further dopant source may comprise means of chemical deposition from the vapor phase dung (CVD), preferably at atmospheric pressure ⁇ (APCVD) applied.
  • CVD vapor phase dung
  • APCVD atmospheric pressure ⁇
  • a dopant-containing liquid is applied to the solar cell substrate as a further dopant source.
  • the dopant FLÜS ⁇ stechnik is particularly preferably sprayed on the solar cell substrate. Alternatively, it may be ⁇ introduced for example by a dipping method.
  • dopant-liquid Phos ⁇ phoric acid can for example be applied.
  • the Ver ⁇ application has proved from one to twenty percent phosphoric acid.
  • the glass layer and / or residues of the further dopant source and / or any oxides formed during the local heating can be removed by etching.
  • the etching can be carried out in a phosphorus or borosilicate glass apparatus known per se.
  • a dopant liquid is used as a further dopant source, it is, or its residues, after the diffusion additional dopant from the further dopant in the solar cell substrate preference ⁇ partially removed by rinsing or washing.
  • the glass layer may for example be formed as part of a Röhrendif ⁇ fusion, for example, in a POCl 3 diffusion.
  • the manufacturing can be provision of a solar cell is further improved by the below-described ways, the aim, the surface concentration of a diffused into the emitter side of a solar cell substrate dopant to verrin ⁇ like.
  • the formation is intended to prevent so-called "dead layers", in which the dopant is present in such a high concentration that electrically inactive dopant is present in a relevant extent and can serve as Rekombinati ⁇ ons congress for generated electron-hole pairs.
  • reaction (2) proceeds rapidly while the reaction (3) proceeds comparatively slowly. Therefore, due to the initially high POCl 3 -Flusses the phosphorus glass layer is ⁇ at the beginning of the emitter diffusion process quickly according to reaction equation (2).
  • the phosphorus glass formation that is the reaction (2), takes place at the interface between the massive silicon of the silicon solar cell substrate used and the phosphor glass layer already formed thereon. The phosphorus glass layer thus grows from the interface to the massive silicon of the silicon solar cell substrate to the outside. If, as is intended in the first Alterna ⁇ tive of the process improvement, POCl 3 -FIUSS continued ⁇ while reduced, the phosphorus glass formation is slowed.
  • the phosphorus can diffuse from an initially formed Phosphorglasteil für with high phosphorus content in a comparatively large amount in the Silizi ⁇ umsolarzellensubstrat, the Eindiffu- sion of phosphorus at a later date by a zwi ⁇ time-trained, phosphor poor Phosphorglasteil ⁇ layer, or by an optionally silicon oxide layer formed, inhibited, so that phosphorus overcomes only in ge ⁇ ringerer amount of the interface with the Siliziumsolarzellensub ⁇ strat.
  • the previously diffused in large quantities phosphorus is already diffused deeper into the volume of the silicon solar cell substrate. As a result, a reduced surface concentration of phosphorus in the silicon solar cell substrate results over conventional POCl 3 diffusion.
  • a phosphorus glass layer having a Ge ⁇ Institutdicke of less than 200 nm is formed, preferably with a total thickness of 40 nm or less.
  • a phosphorus glass layer total thickness of 200 nm is a limit to the rate of growth due to already grown up phosphorus glass shares still insignificant, with larger Automatdi ⁇ CKEN the phosphorus glass layer can play a role.
  • a further development of the first alternative method for improvement provides that in addition to the continuous decrease of the POCl 3-flow of the 0 2 flow in the course of from ⁇ formation of the phosphorus glass layer is increased, preferably increased continuously.
  • a low POCI 3 are first - flow and a high 0 2 flow provided and the POCI 3 -FIUSS is increased continuously.
  • the concentration of electrically inactive phosphorus can even be adjusted within certain limits. This makes it possible to adapt the content of electrically inactive Phos ⁇ phor to the respective type of solar cell.
  • a somewhat higher concentration of electrically inactive phosphorus can be provided than in the case of solar cell substrates which are metallized by direct plating.
  • more homogeneous emitters can be produced by means of the described two alternatives for improving the process compared to conventional POCl 3 diffusions.
  • Substrate center must flow in order to be able to participate in the diffusion of dopant in the region of the substrate center.
  • an increased sheet resistance results in the region of the substrate center, whereas in the edge regions of the silicon solar cell substrate, lower emitter layer resistance values are present.
  • These differences ⁇ de into the emitter sheet resistance values can be reduced by the two alternatives to process improvement. In this context, in particular a targeted supply of additional O 2 has proven itself.
  • the two described alternatives for improving the process are not only advantageous for P0Cl 3 diffusion, but also in connection with BBr 3 - diffusion.
  • the described two alternatives for improving the method can be used in the method according to the invention for forming the first and second partial layers of the glass layer.
  • both alternatives can also be used advantageously in the production of homogeneous emitters.
  • the first alternative method for improvement in egg ⁇ nem method for manufacturing a solar cell with a selective emitter, in particular the method according to the invention, used is particularly preferred.
  • the second alternative for Anlagenverbes ⁇ provement has proved to be particularly advantageous in the production of solar cells with homogeneous emitters.
  • FIG. 1 is a schematic representation of a first exemplary embodiment of the method according to the invention
  • a method according to Figure 1 by running solar cell substrate at different process times A first embodiment of the procedural ⁇ proceedings according to the invention illustrating the schematic diagram of Figure 1 and the schematic representations of Figure 2.
  • a texturizing 8 of a silicon substrate is first formed a POCl3 atmosphere containing at thisracsbei ⁇ game 10.
  • the POCl3-containing atmosphere during a ⁇ ers th period a first amount of 02 added here 12 and ⁇ by a first partial layer of a phosphorus glass layer 55 produced in the course of the process according to Figure 1.
  • FIG. 2a shows a sectional view through a the method according to Figure 1 by running silicon substrate 50 to ei ⁇ nem time by a method described hereinafter, the admixture 14 of a second quantity of O2 and in front of a diffusion 16 of dopant.
  • a re ⁇ is, as already mentioned, a second quantity of O2 added 14 which is less than the first amount of 0. 2
  • a second sublayer 54 is formed part 14.
  • the component layers 52, 54 are thus in vorteilhaf ⁇ ter manner within the framework of an already performed POCI 3 - formed diffusion.
  • the formation 15 of the phosphor glass layer 55 can take place, for example, in a temperature range from 700 ° C. to 900 ° C. over a period of 10 to 30 minutes.
  • the sub-layers 52, 54 are formed 12, 14, before the dopant is diffused to a considerable extent from the phosphorus glass layer 55 in the silicon substrate 50, a ⁇ .
  • the POCl3 diffusion is such Runaway leads ⁇ that the first 52 and the second sub-layer 54 are formed before for the purpose of forming a lightly doped emitter 58 dopant in the phosphor glass layer 55 is diffused into the silicon substrate 50 16.
  • the silicon substrate 50 used is emitter-side provided with a texture 56 on its surface.
  • the this texture 56 covering first part layer 52 has a much lower phosphorus content than the lying above second partial layer 54.
  • pulsed laser radiation having a wavelength in the ultraviolet spectral range is used.
  • the pulse durations are less than 300 ns, preferably less than 100 ns.
  • the laser radiation is guided without overlapping over the surface of the solar cell substrate, a multiple scanning is avoided.
  • a laser with a rectangular fiattop profile is used.
  • an optional method step of annealing 22 of the silicon substrate 50 can follow. This ⁇ it enables the activation of electrically inactive phosphorus in the heavily doped emitter regions 60th
  • FIG. 2b illustrates the silicon substrate 50 from FIG. 2a after the local heating 18 by means of laser radiation.
  • the result of the diffusion of dopant 16 formed dim do ⁇ oriented emitter 58 is schematically indicated by a dashed line and carrier symbols of low density.
  • the phosphorus glass layer 55 has been temporarily removed in the representation of FIG. 2b in a manner known per se, for example by wet-chemical etching.
  • a metallization 62 is already on the heavily doped emitter regions been trained.
  • a very high dopant concentration in the present case a very high phosphorus concentration, is present in the vicinity of the surface of the silicon substrate 50.
  • FIG. 2 b these illustrate the heaped landing carrier symbols.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire comportant un émetteur sélectif, ledit procédé comprenant : la formation (10, 12, 14) d'une couche de verre (55) contenant une substance de dopage sur au moins une partie d'une surface d'un substrat de cellule solaire (50); la formation (16) d'un émetteur faiblement dopé (58) dans les zones du substrat de cellule solaire (50) revêtues de la couche de verre (55) par pénétration par diffusion (16) de la substance de dopage provenant de la couche de verre (55) dans le substrat de cellule solaire (50); la pénétration par diffusion locale (18) d'une substance de dopage supplémentaire provenant de la couche de verre (55) dans le substrat de cellule solaire (50) par chauffage local (18) des zones du substrat de cellule solaire (50) se trouvant sous la couche de verre (55) pour la formation locale (18) de zones émettrices (60) fortement dopées, la couche de verre (55) qui présente dans une première couche partielle (52) de la couche de verre (55) proche de la surface du substrat de cellule solaire (50) une concentration en substance de dopage inférieure à celle d'une seconde couche partielle (54) de la couche de verre (55) éloignée de la surface du substrat de cellule solaire (50) étant réalisée, en tant que couche de verre (55) contenant une substance de dopage, sur la ou les parties de la surface du substrat de cellule solaire.
EP11770037.7A 2010-08-02 2011-08-02 Procédé de fabrication d'une cellule solaire comportant un émetteur sélectif Withdrawn EP2601691A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102010033030A DE102010033030A1 (de) 2010-08-02 2010-08-02 Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter
DE102010044313 2010-09-03
DE102010054182A DE102010054182A1 (de) 2010-09-03 2010-12-10 Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter
PCT/DE2011/075181 WO2012022349A2 (fr) 2010-08-02 2011-08-02 Procédé de fabrication d'une cellule solaire comportant un émetteur sélectif

Publications (1)

Publication Number Publication Date
EP2601691A2 true EP2601691A2 (fr) 2013-06-12

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EP11770037.7A Withdrawn EP2601691A2 (fr) 2010-08-02 2011-08-02 Procédé de fabrication d'une cellule solaire comportant un émetteur sélectif

Country Status (4)

Country Link
EP (1) EP2601691A2 (fr)
KR (1) KR20130108271A (fr)
CN (1) CN103262266A (fr)
WO (1) WO2012022349A2 (fr)

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DE102012018746A1 (de) * 2012-09-21 2014-03-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten
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