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WO2009119131A1 - Élément émetteur de lumière à semiconducteur et son procédé de fabrication - Google Patents

Élément émetteur de lumière à semiconducteur et son procédé de fabrication Download PDF

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Publication number
WO2009119131A1
WO2009119131A1 PCT/JP2009/050281 JP2009050281W WO2009119131A1 WO 2009119131 A1 WO2009119131 A1 WO 2009119131A1 JP 2009050281 W JP2009050281 W JP 2009050281W WO 2009119131 A1 WO2009119131 A1 WO 2009119131A1
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Prior art keywords
waveguide
active
layer
single mode
length
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Japanese (ja)
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昌輝 大矢
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NEC Corp
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NEC Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis

Definitions

  • the present invention relates to a semiconductor light emitting device, and more particularly to a high output semiconductor light emitting device.
  • Semiconductor lasers are generally required to achieve both high light output and single transverse mode operation.
  • a semiconductor laser for an optical disk such as a GaN blue-violet semiconductor laser for a next-generation DVD light source or an AlGaInP red semiconductor laser for a DVD light source
  • a high output operation is performed for high-speed recording
  • a single horizontal operation is performed for high-density recording.
  • Mode operation is required.
  • a GaN-based semiconductor laser or an AlGaInP-based semiconductor laser is used as a light source for laser display
  • a high output operation is required for large screen projection
  • a single mode operation is desirable for downsizing the optical system.
  • an InP long-wave semiconductor laser for optical fiber communication also requires both high output operation and single transverse mode operation for high-speed and large-capacity communication.
  • Patent Document 1 proposes an active MMI type semiconductor laser structure using an active multi-mode interference (MMI) waveguide.
  • MMI active multi-mode interference
  • the active MMI waveguide is used as a main light emitting region, so that the element resistance can be reduced by expanding the active layer area.
  • the active MMI waveguide is used as a main light emitting region, so that the element resistance can be reduced by expanding the active layer area.
  • by providing a single mode active waveguide at the light exit end it is possible to achieve both high output operation and single transverse mode operation.
  • the active MMI type semiconductor laser has a problem that the shape of the beam emitted from the semiconductor laser is disturbed due to the light (radiated light) emitted as non-guided light from the active MMI waveguide.
  • a recess or a light absorber is provided for removing emitted light. .
  • FIG. 9 is a plan view of the active MMI type semiconductor laser described in FIG. 13 of Patent Document 2.
  • 10 is FIG. 14 of Patent Document 2 and is a cross-sectional view taken along the line XX of FIG. 11 is FIG. 15 of Patent Document 2 and is a cross-sectional view taken along the line XI-XI of FIG.
  • the active MMI semiconductor laser described in Patent Document 2 includes an active fundamental mode waveguide 41 and an active MMI waveguide 42, and is provided at each light emitting end of the active fundamental mode waveguide 41.
  • a light absorber 62 is formed.
  • an n-type InP substrate 51 an n-type InP buffer layer 52, an InGaAsP active layer 53, a p-type InP first cladding layer 54, a p-type InP current blocking layer 55, an n-type InP.
  • a current blocking layer 56, a p-type InP second cladding layer 57, and a p-type InGaAs contact layer 58 are formed, and light absorbers 62 are formed on both sides of the active fundamental mode waveguide 41.
  • the first feature of this semiconductor laser is that a part of the active waveguide is composed of the active MMI waveguide 42. Thereby, the area of the main excitation region (region where gain is generated) can be expanded without changing the element length. At the same time, single transverse mode light can be obtained at the input and output ends of the active MMI waveguide 42. Therefore, the single transverse mode light output can be greatly improved.
  • This active MMI type semiconductor laser cannot obtain single transverse mode light when, for example, an ordinary multimode waveguide is used instead of the active MMI waveguide 42. Further, when a passive MMI waveguide is used instead of the active MMI waveguide 42, it does not contribute to the area expansion of the main excitation region. In these respects, they are greatly different from ordinary semiconductor lasers.
  • the second feature is that a structure for removing emitted light is provided. Radiant light hardly occurs in an ideal active MMI waveguide. However, in an actual semiconductor laser, part of the guided light is not self-imaged at the input / output end of the active MMI waveguide 42 due to manufacturing errors. Therefore, it is radiated out of the waveguide as non-guided light, and the output beam shape is disturbed.
  • a light absorber 62 is provided on the side of the active fundamental mode waveguide 41 to remove the emitted light and improve the beam shape.
  • Non-patent document 1 will be described later. Japanese Patent No. 3244115 Japanese Patent No. 3329765 Lucas B. Soldano, 1 other, “Optical Multi-Mode Interference Devices Based on Self-Imaging: Principles and Applications”, Journal of Lightwave Technology, 1995, Vol. 13, no. 4, pages 615-627
  • the active MMI type semiconductor laser disclosed in Patent Document 2 has no mechanism for guiding the emitted light, and the emitted light propagates while diffusing both in the horizontal direction and in the vertical direction. Therefore, the radiated light component diffused in the horizontal direction can be removed by the radiated light removing means, but the radiated light component diffused in the vertical direction cannot be removed. Therefore, there is a drawback that the effect of removing the emitted light is low.
  • the semiconductor light emitting device is A planar active layer; A current blocking layer for constricting a current flowing into the active layer; An inner stripe type active waveguide constituted by a stripe-shaped opening formed in the current blocking layer,
  • the active waveguide is An active multimode interference waveguide; A first single mode waveguide extending from the active multimode interference waveguide to the exit end; A second single mode waveguide extending from the active multimode interference waveguide opposite to the first single mode waveguide; The length of the first single mode waveguide is longer than the length of the second single mode waveguide.
  • FIG. 1 is a plan view of a waveguide of a semiconductor laser according to a first embodiment of the present invention.
  • FIG. 2 is a sectional view taken along the line II-II in FIG.
  • FIG. 3 is a sectional view taken along line III-III in FIG. It is a beam propagation calculation result in the semiconductor laser for a comparison. It is a far-field image calculation result in the semiconductor laser for a comparison. It is a beam propagation calculation result in the semiconductor laser which concerns on embodiment. It is a far-field image calculation result in the semiconductor laser which concerns on embodiment.
  • 1 is a detailed cross-sectional view of a semiconductor laser according to an embodiment.
  • FIG. 14 is a plan view of the semiconductor laser described in FIG. 13 of Patent Document 2.
  • FIG. 10 is a sectional view taken along line XX in FIG. 9.
  • FIG. 10 is a sectional view taken along line XI-XI in FIG. 9.
  • FIG. 1 is a plan view of a waveguide of a semiconductor laser according to the first embodiment of the present invention.
  • the waveguide 109 of the active MMI semiconductor laser according to the first embodiment includes first and second active fundamental mode waveguides 109a and 109c and an active MMI waveguide 109b.
  • a current blocking layer 108 is formed around the waveguide 109.
  • the + z direction is defined as the front (the main light emission side).
  • the active MMI semiconductor laser includes an n-type cladding layer 103, an n-side optical confinement layer 104, a planar active layer 105, a p-side optical confinement layer 107, a current.
  • a blocking layer 108, a p-type cladding layer 110, and an active waveguide 109 having an inner stripe structure are provided.
  • the current blocking layer 108 controls the current distribution in the horizontal direction in the active layer 105 by blocking currents other than the active waveguide 109.
  • the light distribution in the horizontal direction is controlled by giving a refractive index difference in the horizontal direction.
  • 2 and 3 are conceptual diagrams only, and the substrate and electrodes are omitted.
  • the current I spreads outside the active waveguides 109a and 109b as shown by broken line arrows in FIGS. 2 and 3, so that the vicinity of the active waveguides 109a and 109b.
  • the active layer 105 In the active layer 105, light propagates without being absorbed. However, the current density decreases as the distance from the active waveguides 109a and 109b increases. Therefore, light is attenuated as it propagates in the active layer 105 sufficiently away from the active waveguides 109a and 109b, and functions as a light absorption region 105a.
  • the length of the first active fundamental mode waveguide 109a is made longer than the length of the second active fundamental mode waveguide 109c located on the opposite side via the active MMI waveguide 109b.
  • the length of the first active fundamental mode waveguide 109a cannot be increased without limitation. The reason is that if the length of the first active fundamental mode waveguide 109a is increased, the total length of the active waveguide 109 is increased, leading to deterioration in device characteristics such as an increase in operating current and an increase in cost such as increase in device dimensions. Because. Thus, in order to determine the length of the active waveguide 109, it is necessary to consider other aspects than the removal of the emitted light. Therefore, as shown in FIG. 1, the length of the second active fundamental mode waveguide 109c is shortened by the length of the first active fundamental mode waveguide 109a. Thereby, the first active fundamental mode waveguide 109a can be lengthened without changing the overall length of the active waveguide 109. Therefore, the radiation removal effect can be enhanced without increasing the operating current or increasing the element size.
  • planar type active layer 105 has a continuous shape in the horizontal direction. Therefore, it performs a light guide function in the vertical direction with respect to the emitted light, and the emitted light propagates along the active layer 105 toward the light absorption region 105a without diffusing in the vertical direction. Therefore, all components of the emitted light can be reliably guided to the light absorption region 105a, and the effect of removing the emitted light can be greatly enhanced.
  • any radiated light can be removed.
  • the active MMI waveguide 109b has a manufacturing error, not only the radiation generated with respect to the fundamental mode light but also the active MMI waveguide 109b is manufactured so that the self-imaging of the odd mode light is not allowed. It is also possible to remove the emitted light generated with respect to the mode light.
  • FIG. 4 shows the result of calculating the intensity distribution of light propagating in the + z direction for a comparative active MMI semiconductor laser.
  • the comparative active MMI type semiconductor laser has an active waveguide 9 including a first active fundamental mode waveguide 9a, a second active fundamental mode waveguide 9c, and an active MMI waveguide 9b.
  • the length of the first active fundamental mode waveguide 9a is equal to the length of the second active fundamental mode waveguide 9c.
  • Light emitted from the active MMI waveguide 9 b without being guided to the first active waveguide 9 a reaches the front end of the active waveguide 9.
  • FIG. 5 is a calculation result of a far-field image of the beam emitted from the front end of the active waveguide 9, and the beam shape is disturbed by the influence of the radiated light.
  • FIG. 6 shows the result of calculating the intensity distribution of light propagating in the + z direction for the active MMI semiconductor laser according to the present embodiment.
  • the active MMI semiconductor laser according to the present embodiment has an active waveguide 109 including a first active fundamental mode waveguide 109a, a second active fundamental mode waveguide 109c, and an active MMI waveguide 109b.
  • the length of the first active fundamental mode waveguide 109a is longer than the length of the second active fundamental mode waveguide 109c.
  • Increasing the length of the first active fundamental mode waveguide 109a increases the attenuation of light emitted without being guided from the active MMI waveguide 109b to the first active fundamental mode waveguide 109a.
  • FIG. 7 shows the calculation result of the far-field image of the beam emitted from the front end of the active waveguide 109. Since the emitted beam contains almost no radiation component, a good beam shape can be obtained.
  • the second active fundamental mode waveguide 109c is shortened by the length of the first active fundamental mode waveguide 109a. Therefore, the total length of the active waveguide 109 is equal to the total length of the active waveguide 9 in FIG. Therefore, it is possible to enhance only the effect of removing the emitted light without causing an increase in operating current or an increase in element size.
  • FIG. 8 is a more detailed view of FIG.
  • an n-type buffer layer 102, an n-type cladding layer 103, an n-side optical confinement layer 104, a planar active layer 105, a cap layer 106, a p-side optical confinement layer 107, and a current blocking layer 108 are provided on the n-type substrate 101.
  • the current blocking layer 108 has an opening removed in a stripe shape, and this opening constitutes an active fundamental mode waveguide 109a.
  • a p-type cladding layer 110 and a p-type contact layer 111 are stacked in this order on the current blocking layer 108 and the active fundamental mode waveguide 109a which is an opening.
  • a p-side electrode 112 is provided on the upper surface of the p-type contact layer 111, and an n-side electrode 113 is provided on the lower surface of the n-type substrate 101.
  • the n-type substrate 101 is made of, for example, a GaN substrate.
  • the n-type buffer layer 102 is made of, for example, GaN having a thickness of 1 ⁇ m.
  • the n-type cladding layer 103 is made of, for example, AlGaN having a thickness of 2 ⁇ m.
  • the n-side optical confinement layer 104 is made of GaN having a thickness of 0.1 ⁇ m, for example.
  • the planar active layer 105 has a multiple quantum well structure including, for example, an InGaN well layer having a thickness of 3 nm and an InGaN barrier layer having a thickness of 4 nm.
  • the cap layer 106 is made of, for example, AlGaN having a thickness of 10 nm.
  • the p-side optical confinement layer 107 is made of, for example, GaN having a thickness of 0.1 ⁇ m.
  • the current blocking layer 108 is made of AlN having a thickness of 0.1 ⁇ m, for example, and also has a function as a light distribution control layer due to a difference in refractive index in the horizontal direction.
  • the p-type cladding layer 110 has a 130-period superlattice structure made of, for example, GaN with a thickness of 2.5 nm and AlGaN with a thickness of 2.5 nm.
  • the p-type contact layer 111 is made of, for example, GaN having a thickness of 0.1 ⁇ m.
  • the n-type impurity is, for example, Si, and the p-type impurity is, for example, Mg.
  • each waveguide is determined as follows, for example.
  • the dimensions of the active MMI waveguide 109b are determined with reference to the MMI theory described in Non-Patent Document 1, for example.
  • the beat length L ⁇ derived from this MMI theory is given by equation (1).
  • W is MMI waveguide width
  • n r is the equivalent refractive index of the waveguide
  • n c is the waveguide outside of the equivalent refractive index
  • lambda 0 is the free space wavelength of the guided light.
  • ⁇ is 0 in the TE mode and 1 in the TM mode.
  • the length L of the MMI waveguide satisfies the formula (2)
  • the MMI waveguide operates as a 1 ⁇ N waveguide.
  • the expression (3) is satisfied, the MMI waveguide operates as an N ⁇ N waveguide.
  • the dimensions of the active MMI waveguide 109b are as follows: when the width is about 2 to 4 ⁇ m, the length is 50 to 150 ⁇ m, when the width is about 4 to 5 ⁇ m, the length is 150 to 250 ⁇ m, and the width Is about 5 to 6 ⁇ m, and the length is 250 to 350 ⁇ m, single transverse mode light is obtained at both ends of the active MMI waveguide 109b. This is very different from the case where only multimode light is obtained at both ends of a normal multimode waveguide.
  • the widths of the first and second active fundamental mode waveguides 109a and 109c are determined so that single transverse mode light obtained at both ends of the active MMI waveguide 109b can be guided stably.
  • it is 1 to 2 ⁇ m.
  • the total length of the active waveguide 109 is determined from the viewpoints of desired element characteristics and manufacturing cost. For example, it is 600 to 800 ⁇ m.
  • the lengths of the first active fundamental mode waveguide 109a and the second active fundamental mode waveguide 109c are determined so that the first active fundamental mode waveguide 109a is longer than the second active fundamental mode waveguide 109c. It is done.
  • the length of the active MMI waveguide 109b is 200 ⁇ m and the total length of the active waveguide 109 is 600 ⁇ m
  • the length of the first active fundamental mode waveguide 109a is 250 to 350 ⁇ m
  • the second active fundamental mode guide is The length of the waveguide 109c is preferably 50 to 150 ⁇ m.
  • the intensity of the emitted light tends to increase as the width of the active MMI waveguide 109b increases and the number of waveguide modes increases.
  • the emitted light is a part of the guided light that is not self-imaged at the input and output ends of the active MMI waveguide 109b, but is emitted outside the waveguide as non-guided light. This is because as the number of waveguide modes in the waveguide 109b increases, the probability that self-imaging cannot be performed increases. Therefore, it is preferable to increase the length of the first active fundamental mode waveguide 109a as the width of the active MMI waveguide 109b becomes wider in order to enhance the effect of removing the emitted light.
  • L 0 is approximated as Equation (4) from Equation (1) and Equation (2) when the difference in equivalent refractive index inside and outside the waveguide is sufficiently large.
  • an active MMI semiconductor laser in which a part of the active waveguide 109 is an MMI waveguide 109b has a planar type active layer 105 continuous in the horizontal direction, and the active MMI waveguide 109b to the active waveguide 109
  • the length to the front end is longer than the length from the active MMI waveguide 109b to the rear end of the active waveguide 109. That is, the length of the first active fundamental mode waveguide 109a located on the output side is longer than the length of the second active fundamental mode waveguide 109c located on the opposite side via the active MMI waveguide 109b.
  • a 300 hPa vacuum MOVPE apparatus is used for manufacturing the element structure.
  • a carrier gas is a mixed gas of hydrogen and nitrogen, and trimethylgallium, trimethylaluminum, and trimethylindium are used as Ga, Al, and In sources, respectively.
  • Silane is used as the n-type impurity, and biscyclopentadienyl magnesium is used as the p-type impurity.
  • the substrate After introducing the n-type GaN substrate 101 into the growth apparatus, the substrate is heated while supplying ammonia, and the growth is started when the growth temperature is reached.
  • an n-type GaN buffer layer 102, an n-type AlGaN cladding layer 103, an n-side GaN optical confinement layer 104, an active layer 105 having a multiple quantum well structure comprising an InGaN well layer and an InGaN barrier layer, an AlGaN cap layer 106, a p-side GaN optical confinement layer 107, and an AlN current blocking layer 108 are formed.
  • the growth temperature is, for example, 200 to 800 ° C. for the AlN current blocking layer 108, 800 ° C. for the active layer 105, and 1100 ° C. otherwise. Since the AlN current blocking layer 108 is grown at a low temperature, it is amorphous at the end of the first growth.
  • a SiO 2 film is deposited thereon, and a SiO 2 mask having stripe-shaped openings is formed using a normal photolithography technique.
  • a mixed solution of phosphoric acid and sulfuric acid is maintained at 50 to 200 ° C. to form an etching solution, and a stripe-shaped active waveguide 109 is formed in the AlN current blocking layer 108.
  • amorphous AlN is easily etched, and single crystal GaN is difficult to etch. Therefore, etching with high selectivity and good controllability is performed.
  • a desired shape can be easily and accurately formed by appropriately setting the shape of the photolithography mask.
  • the substrate is again put into the growth apparatus, the substrate is heated while supplying ammonia, and the second growth is started when the growth temperature is reached.
  • the AlN current blocking layer 108 is single-crystallized in the process of raising the temperature of the substrate.
  • a p-type AlGaN / GaN superlattice cladding layer 110 and a p-type GaN contact layer 111 are formed.
  • the p-side electrode 112 is formed on the upper surface, and the n-side electrode 113 is formed on the lower surface.
  • the above manufacturing method does not require etching removal of the active layer 105 within a range in which current and light are substantially distributed, and can be applied to a material system such as a GaN system or an AlGaInP system. Further, by appropriately controlling the material and thickness of the current blocking layer 108, the second temperature rise condition, etc., the region located under the waveguide 109 in the active layer 105 continuous in the horizontal direction is good. The crystallinity can be lowered only in the region located under the current blocking layer 108 while maintaining the crystallinity. Thereby, the light absorption in a light absorption area
  • the composition of the current blocking layer 108 is preferably Al x In y Ga 1-xy N (0.4 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 0.6, 0 ⁇ x + y ⁇ 1).
  • the effect of controlling the current distribution and the light distribution can be sufficiently obtained. More specifically, when the band gap of the current blocking layer is reduced, the energy barrier against carriers is reduced, current components that do not contribute to laser oscillation increase exponentially, and the operating current increases rapidly. Further, when the refractive index of the current blocking layer is increased, the light confinement effect in the horizontal direction is weakened, and the horizontal transverse mode stability of light is rapidly deteriorated.
  • the composition of the current blocking layer 108 is Al x In y Ga 1-xy N (0.4 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 0.6, 0 ⁇ x + y ⁇ 1) is preferable.
  • planar active layer 105 does not need to be continuous over the entire element, and the active layer may be interrupted in a region where current and light are not substantially distributed.
  • the planar active layer 105 may not be flat as long as it is continuous in a region where current and light are substantially distributed, and may have a step or an unevenness.
  • first active fundamental mode waveguide 109a and the active MMI waveguide 109b, or between the second active fundamental mode waveguide 109c and the active MMI waveguide 109b.
  • An active tapered waveguide for reducing loss may be included.
  • the length of the first active fundamental mode waveguide 109a is equal to the length of the active taper waveguide provided between the first active fundamental mode waveguide 109a and the active MMI waveguide 109b. The effect of removing the emitted light can be improved.
  • Non-Patent Document 1 it is possible to design the active MMI waveguide 109b so that self-imaging of odd mode light is not allowed.
  • the first active fundamental mode waveguide 109a and the second active fundamental mode waveguide 109c are designed so that not only fundamental mode light but also primary mode light can be guided, the single active fundamental mode waveguide 109a and the second active fundamental mode waveguide 109c One transverse mode operation can be realized.
  • the length of the active waveguide 109 may be shorter than the total element length of the semiconductor light emitting element.
  • a current non-injection region may be provided at one end or both ends of the active waveguide 109, and another passive waveguide may be connected.
  • the present invention can be applied to a semiconductor light emitting device other than a semiconductor laser, for example, a semiconductor optical amplifier.
  • the present invention can be widely applied to semiconductor light emitting devices and manufacturing methods thereof.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser à semiconducteur actif du type MMI doté d'une ruban intérieur, produisant un faisceau de forme avantageuse sans rayonnement parasite. Selon l'invention, un élément émetteur de lumière à semiconducteur comprend une couche active du type planaire, une couche de blocage du courant destinée à empêcher le passage du courant dans la couche active, et un guide d'ondes actif du type à ruban intérieur formé par une ouverture dans la couche de blocage du courant. Le guide d'ondes actif comprend un guide d'ondes à interférences multimodes actif, un premier guide d'ondes monomode s'étendant du guide d'ondes à interférences multimodes actif jusqu'à une extrémité d'émission, et un deuxième guide d'ondes monomode s'étendant du guide d'ondes à interférences multimodes actif jusqu'à l'extrémité opposée du premier guide d'ondes monomode. Le premier guide d'ondes monomode est plus long que le deuxième guide d'ondes monomode.
PCT/JP2009/050281 2008-03-28 2009-01-13 Élément émetteur de lumière à semiconducteur et son procédé de fabrication Ceased WO2009119131A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103825194A (zh) * 2014-03-07 2014-05-28 中国科学院半导体研究所 单模光子晶体边发射半导体激光器
CN103915758A (zh) * 2014-03-26 2014-07-09 中国科学院上海微系统与信息技术研究所 一种多模干涉结构太赫兹量子级联激光器及制作方法
CN104901159A (zh) * 2015-05-27 2015-09-09 中国科学院长春光学精密机械与物理研究所 多波导集成谐振半导体激光器
JP2021158269A (ja) * 2020-03-27 2021-10-07 株式会社デンソー 半導体発光素子

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JP2003258368A (ja) * 2002-03-06 2003-09-12 Fujitsu Ltd 半導体光素子
WO2005060058A1 (fr) * 2003-12-18 2005-06-30 Nec Corporation Laser a semi-conducteur et son procede de fabrication
WO2007037057A1 (fr) * 2005-09-28 2007-04-05 Nec Corporation Dispositif électroluminescent à semiconducteur de nitrure du groupe iii

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Publication number Priority date Publication date Assignee Title
JP2000323782A (ja) * 1999-05-13 2000-11-24 Nec Corp 半導体レーザー及び半導体光増幅器並びにそれらの製造方法
JP2003258368A (ja) * 2002-03-06 2003-09-12 Fujitsu Ltd 半導体光素子
WO2005060058A1 (fr) * 2003-12-18 2005-06-30 Nec Corporation Laser a semi-conducteur et son procede de fabrication
WO2007037057A1 (fr) * 2005-09-28 2007-04-05 Nec Corporation Dispositif électroluminescent à semiconducteur de nitrure du groupe iii

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103825194A (zh) * 2014-03-07 2014-05-28 中国科学院半导体研究所 单模光子晶体边发射半导体激光器
CN103915758A (zh) * 2014-03-26 2014-07-09 中国科学院上海微系统与信息技术研究所 一种多模干涉结构太赫兹量子级联激光器及制作方法
CN104901159A (zh) * 2015-05-27 2015-09-09 中国科学院长春光学精密机械与物理研究所 多波导集成谐振半导体激光器
JP2021158269A (ja) * 2020-03-27 2021-10-07 株式会社デンソー 半導体発光素子
JP7453650B2 (ja) 2020-03-27 2024-03-21 株式会社デンソー 半導体発光素子

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